JPH06103771B2 - End face processing method for semiconductor laser and jig used therefor - Google Patents
End face processing method for semiconductor laser and jig used thereforInfo
- Publication number
- JPH06103771B2 JPH06103771B2 JP30242786A JP30242786A JPH06103771B2 JP H06103771 B2 JPH06103771 B2 JP H06103771B2 JP 30242786 A JP30242786 A JP 30242786A JP 30242786 A JP30242786 A JP 30242786A JP H06103771 B2 JPH06103771 B2 JP H06103771B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- jig
- protective film
- face
- laser bar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/131—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
- H01S3/1312—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation by controlling the optical pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/0915—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light
- H01S3/092—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of flash lamp
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Description
【発明の詳細な説明】 ［発明の目的］ （産業上の利用分野） この発明は、半導体レーザの端面処理方法及びそれに使
用する治具の改良に関する。Description: [Object of the Invention] (Industrial field of application) The present invention relates to a method for processing an end surface of a semiconductor laser and an improvement in a jig used for the method.
（従来の技術） 半導体レーザは、幅２〜３μｍ、厚さ0.1μｍ程度の微
小領域より５〜20mWの光出力を得る装置であり、その単
位面積当りの光出力密度は、106〜107W/cm2にも達す
る。このため、半導体レーザの光出射面は、自己の光出
力により損傷を受けることから、信頼性向上、長寿命化
のためには、共振器端面への保護膜加工は不可欠であ
る。(Prior Art) A semiconductor laser is a device that obtains a light output of 5 to 20 mW from a minute region having a width of 2 to 3 μm and a thickness of about 0.1 μm, and the light output density per unit area is 10 6 to 10 7 It reaches W / cm 2 . For this reason, the light emitting surface of the semiconductor laser is damaged by its own optical output, and therefore, in order to improve reliability and extend the life, it is essential to process the protective film on the end face of the resonator.
半導体レーザの端面への保護膜形成技術は、例えば特開
昭60-42888号公報、特開昭60-140781号公報に記載され
ている。即ち、基本的には第３図に示すように、ウェハ
から劈開により形成した複数の半導体レーザ素子が一列
に並んだ半導体レーザ・バー（20）を、一方の端面（2
2）が露出するように複数個並べて治具（24）に保持
し、端面（22）に誘電体膜からなる保護膜を、スパッ
タ、CVD法等で形成している。Techniques for forming a protective film on the end face of a semiconductor laser are described in, for example, JP-A-60-42888 and JP-A-60-140781. That is, basically, as shown in FIG. 3, a semiconductor laser bar (20) in which a plurality of semiconductor laser elements formed by cleavage from a wafer are arranged in a line is provided on one end surface (2
2) are arranged side by side so as to be exposed so that they are held by a jig (24), and a protective film made of a dielectric film is formed on the end face (22) by sputtering, CVD or the like.
（発明が解決しようとする問題点） 上述の先行技術に記載された方法では、各半導体レーザ
・バーの積層面との間に僅かでも隙間が形成されると、
スパッタ、CVDの際に、そこから保護膜形成物質が侵入
する。このため、半導体レーザの電極面に被膜が形成さ
れてしまい、後工程でヒートシンクへのマウントが困難
になったり、ワイヤボンデイングができず導電不良にな
ったりする等の問題が発生する。(Problems to be Solved by the Invention) In the method described in the above-mentioned prior art, if even a slight gap is formed between the laminated surface of each semiconductor laser bar,
At the time of sputtering or CVD, the protective film forming substance enters from there. As a result, a coating film is formed on the electrode surface of the semiconductor laser, which makes it difficult to mount it on a heat sink in a later step, and causes problems such as poor wire bonding and poor conductivity.
なお、第３図に示す半導体レーザ・バーの保持治具を、
スパッタ・ターゲットの下方から側方に離れた位置に配
置し、端面（22）に対して斜め方向からスパッタを行え
ば、隙間があっても保護膜形成物質の電極面への被着を
防止できる。しかし、この場合には、場所による膜厚不
均一のため保護膜の厚さを正確に制御できず、良好な特
性の保護膜が得られず全く実用にならない。In addition, the holding jig for the semiconductor laser bar shown in FIG.
By arranging at a position laterally from below the sputter target and performing sputtering from an oblique direction with respect to the end face (22), it is possible to prevent the protective film forming substance from adhering to the electrode surface even if there is a gap. . However, in this case, the thickness of the protective film cannot be accurately controlled due to the nonuniformity of the film thickness depending on the location, and the protective film with good characteristics cannot be obtained, which is not practical at all.
また、半導体レーザの一方の端面（25）が治具の載置面
（26）に接しているで、半導体レーザ・バーを治具に載
置する時や保護膜形成時にこの端面が損傷することがあ
る。さらには、半導体レーザ・バーは厚さが薄く、多数
を治具に垂直に立てて並べることは作業的にも容易では
ない。Further, since one end surface (25) of the semiconductor laser is in contact with the mounting surface (26) of the jig, this end surface may be damaged when the semiconductor laser bar is mounted on the jig or when the protective film is formed. There is. Further, since the semiconductor laser bar is thin, it is not easy in operation to stand a large number of semiconductor laser bars vertically on the jig.
本発明は、上述の問題点を解消し、能率、歩留りの良い
半導体レーザの端面処理方法及びそれに使用する治具を
提供することを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to solve the above-mentioned problems and provide a method for processing an end face of a semiconductor laser with good efficiency and yield, and a jig used for the same.
［発明の構成］ （問題点を解決するための手段） 本発明は、複数の半導体レーザ・バーの一方の端面を、
それぞれ載置面に対して傾斜させて治具に固定し、載置
面と反対側の半導体レーザ・バーの端面に処理膜を形成
することを特徴とする半導体レーザの端面処理方法であ
る。[Structure of the Invention] (Means for Solving Problems) The present invention relates to one end face of a plurality of semiconductor laser bars,
The semiconductor laser end face processing method is characterized in that the semiconductor laser bar is tilted with respect to the mounting surface and fixed to a jig, and a processing film is formed on the end surface of the semiconductor laser bar on the side opposite to the mounting surface.
また、本発明は、半導体レーザ・バーの載置面と、この
載置面に対して所定の角度傾斜した傾斜面とを有する半
導体レーザの端面処理用治具である。Further, the present invention is a semiconductor laser end face processing jig having a mounting surface of the semiconductor laser bar and an inclined surface inclined by a predetermined angle with respect to the mounting surface.
（作用） 本発明によれば、複数の半導体レーザ・バーは、エッヂ
部分のみが載置面と接触する如く一方の端面が治具の載
置面に対して傾斜させて、つまり端面が載置面と接する
ことなく治具に保持固定される。従って、端面に処理膜
を形成する際に、載置面側の端面が損傷することがな
い。さらには、半導体レーザ・バーは載置面に対して傾
斜して載置されるので、保護膜形成時に、各半導体レー
ザ・バーの積層面との間に隙間が形成されていても、そ
こから保護膜形成物質が侵入することがなく、電極面に
被膜が形成されるという問題も生じない。(Operation) According to the present invention, in the plurality of semiconductor laser bars, one end surface is inclined with respect to the mounting surface of the jig, that is, the end surface is mounted so that only the edge portion comes into contact with the mounting surface. It is held and fixed on the jig without contacting the surface. Therefore, the end surface on the mounting surface side is not damaged when the treatment film is formed on the end surface. Furthermore, since the semiconductor laser bar is mounted so as to be inclined with respect to the mounting surface, even if a gap is formed between the semiconductor laser bar and the stacked surface of each semiconductor laser bar when the protective film is formed, The problem that the protective film forming substance does not enter and the film is formed on the electrode surface does not occur.
（実施例） 第１図ａは本発明の一実施例の半導体レーザの端面処理
用治具に半導体レーザ・バーを保持固定した状態を示す
正面図、同図ｂはA-A′線に沿った断面図である。(Embodiment) FIG. 1a is a front view showing a state in which a semiconductor laser bar is held and fixed to an end face processing jig of a semiconductor laser according to an embodiment of the present invention, and FIG. 1b is a cross section taken along line AA '. It is a figure.
治具（１）は、載置面（２）となる底部（３）と、傾斜
面（４）を有する正側面（５）と、両側面（６）及び押
え具（７）からなる。傾斜面（４）は例えば載置面
（２）に対して70度傾斜している。治具（１）には、第
２図に示す半導体レーザ・バー（10）が複数個並べられ
る。この半導体レーザ・バー（10）は、多数の半導体レ
ーザ素子を形成したウェハから、複数の半導体レーザ素
子（図示せず）が一列に並んだものを棒状（例えば幅0.
25mm、厚さ0.1mm、長さ10〜20mm）に劈開したものであ
る。半導体レーザ・バー（10）の劈開面である端面（1
1）（12）には、誘電体膜からなる保護膜が後述のよう
にして形成される。半導体レーザ・バー（10）は、第１
図ｂに示すように、治具（１）に傾斜面（４）にもたせ
かけるようにして、順次、電極面（13）（14）が密着す
るように複数個が載置される。この際、半導体レーザ・
バー（10）は載置面（２）とはエッヂのみで接触し、一
方の端面（11）は載置面（２）から傾斜した離れ状態と
なる。複数本の半導体レーザ・バー（10）を載置した
後、押え具（７）で押えて固定する。The jig (1) is composed of a bottom portion (3) serving as a mounting surface (2), a regular side surface (5) having an inclined surface (4), both side surfaces (6) and a holding tool (7). The inclined surface (4) is inclined, for example, by 70 degrees with respect to the mounting surface (2). A plurality of semiconductor laser bars (10) shown in FIG. 2 are arranged on the jig (1). This semiconductor laser bar (10) has a bar-like shape (for example, a width of 0. 1) in which a plurality of semiconductor laser elements (not shown) are arranged in a row from a wafer on which a large number of semiconductor laser elements are formed.
25 mm, thickness 0.1 mm, length 10 to 20 mm). End facet (1) which is the cleavage plane of semiconductor laser bar (10)
A protective film made of a dielectric film is formed on 1) and 12) as described later. Semiconductor laser bar (10) is the first
As shown in Fig. B, a plurality of jigs (1) are placed in such a manner that the electrode surfaces (13) and (14) are brought into close contact with each other in such a manner that the jig (1) is leaned against the inclined surface (4). At this time, the semiconductor laser
The bar (10) is in contact with the mounting surface (2) only by the edge, and the one end surface (11) is in a state of being inclined and separated from the mounting surface (2). After mounting a plurality of semiconductor laser bars (10), they are fixed by pressing them with a retainer (7).
次に、複数の半導体レーザ・バー（10）を保持固定した
治具（１）をスパッタ装置のターゲットの下方に配置
し、スパッタにより、露出する端面（12）にSiO2、Si3N
4、Al2O3等の絶縁物からなる保護膜を所定の厚さだけ形
成する。なお、保護膜は必要に応じて複数層が形成され
る。一方の端面（12）への保護膜の形成が終了したら、
他方の端面（11）にも同様にして保護膜を形成する。Next, the jig (1) holding and fixing a plurality of semiconductor laser bars (10) is placed below the target of the sputtering apparatus, and SiO 2 and Si 3 N are exposed on the end face (12) exposed by sputtering.
4 , A protective film made of an insulating material such as Al 2 O 3 is formed to a predetermined thickness. A plurality of layers are formed as the protective film, if necessary. After forming the protective film on one end face (12),
A protective film is similarly formed on the other end surface (11).
このように、本発明によれば、ターゲットの下方におい
て、半導体レーザ・バーは傾斜して治具に保持されるた
め、膜厚制御も容易にして、かつ保護膜形成物質の電極
面への回り込みもなく、導電不良の発生が防止できる。
また、他方の端面は載置面と接することがなく損傷も発
生しない。なお、傾斜させた半導体レーザ・バーからは
電極面の一部が露出するが、これは電極の端から僅か〜
10μｍ程度であり、保護膜形成物質の被着は実用上問題
とはならない。なお、露出部を覆うようなダミー基板を
各半導体レーザ・バーの間に配置すれば、この被着も防
止できる。更に、傾斜面にもたせかけるようにして、半
導体レーザ・バーを載置できるというので、半導体レー
ザ・バーの治具への取付け作業も容易である。As described above, according to the present invention, since the semiconductor laser bar is tilted and held by the jig below the target, the film thickness can be easily controlled, and the protective film forming substance can be easily introduced to the electrode surface. In addition, it is possible to prevent the occurrence of poor conductivity.
Further, the other end surface does not come into contact with the mounting surface and is not damaged. A part of the electrode surface is exposed from the tilted semiconductor laser bar, but this is slightly below the edge of the electrode.
Since it is about 10 μm, the adhesion of the protective film forming substance does not pose a practical problem. This deposition can also be prevented by disposing a dummy substrate covering the exposed portion between the semiconductor laser bars. Further, since the semiconductor laser bar can be placed by leaning it on the inclined surface, the work of attaching the semiconductor laser bar to the jig is easy.
［発明の効果］ 本発明によれば、保護膜形成物質の回り込みにより、導
電不良が発生することがなく、また、端面への損傷を与
えることがなく、能率、歩留りの良い半導体レーザの半
導体レーザの端面処理方法及びそれに使用する治具を提
供できる。[Effects of the Invention] According to the present invention, a semiconductor laser of a semiconductor laser having a good efficiency and a high yield without causing a conductive defect due to the wraparound of the protective film forming substance and without damaging the end face. It is possible to provide the end surface treatment method and the jig used therefor.
第１図は本発明の一実施例の半導体レーザの端面処理用
治具に半導体レーザ・バーを保持固定した状態を正面図
および断面図、第２図は半導体レーザ・バーの斜視図、
第３図は先行技術の半導体レーザ・バーの保持治具の断
面図を示す。 （１）……治具、 （２）……載置面、 （４）……傾斜面、 （７）……押え具、 （10）……半導体レーザ、 （11）（12）……端面。FIG. 1 is a front view and a sectional view showing a state in which a semiconductor laser bar is held and fixed to a jig for processing an end face of a semiconductor laser according to an embodiment of the present invention, and FIG. 2 is a perspective view of the semiconductor laser bar.
FIG. 3 shows a cross-sectional view of a prior art semiconductor laser bar holding jig. (1) …… Jig, (2) …… Mounting surface, (4) …… Inclined surface, (7) …… Holder, (10) …… Semiconductor laser, (11) (12) …… End surface .
Claims (2)
を、それぞれ載置面に対して傾斜させて治具に固定し、
載置面と反対側の半導体レーザ・バーの端面に処理膜を
形成することを特徴とする半導体レーザの端面処理方
法。1. An end face of each of a plurality of semiconductor laser bars is tilted with respect to a mounting face and fixed to a jig,
A method for processing an end surface of a semiconductor laser, which comprises forming a processing film on an end surface of the semiconductor laser bar opposite to the mounting surface.
面に対して所定の角度傾斜した傾斜面とを有する半導体
レーザの端面処理用治具。2. A jig for processing an end surface of a semiconductor laser having a mounting surface of a semiconductor laser bar and an inclined surface inclined at a predetermined angle with respect to the mounting surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30242786A JPH06103771B2 (en) | 1986-12-17 | 1986-12-17 | End face processing method for semiconductor laser and jig used therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30242786A JPH06103771B2 (en) | 1986-12-17 | 1986-12-17 | End face processing method for semiconductor laser and jig used therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63153875A JPS63153875A (en) | 1988-06-27 |
| JPH06103771B2 true JPH06103771B2 (en) | 1994-12-14 |
Family
ID=17908791
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30242786A Expired - Lifetime JPH06103771B2 (en) | 1986-12-17 | 1986-12-17 | End face processing method for semiconductor laser and jig used therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06103771B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2531878Y2 (en) * | 1989-10-25 | 1997-04-09 | ミヤチテクノス株式会社 | Pulse laser power supply |
| EP2822113A3 (en) | 2013-06-28 | 2015-03-25 | Canon Kabushiki Kaisha | Pulse laser and photoacoustic apparatus |
-
1986
- 1986-12-17 JP JP30242786A patent/JPH06103771B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63153875A (en) | 1988-06-27 |
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