JPH067619B2 - Jig for semiconductor surface treatment - Google Patents

Description

TECHNICAL FIELD The present invention relates to a semiconductor surface treatment jig.

Configuration of Conventional Example and Problems Thereof In a manufacturing process of a semiconductor element, a surface of a semiconductor may have to be selectively treated. For example (GaA
l) In an As-based semiconductor laser, in order to prevent deterioration of the end face from which light is emitted, the end face is covered with a dielectric film. In this coating treatment, the semiconductor laser wafer (1) is divided into bars as shown in FIG. 1, and Al ₂ O ₃ and SiO ₂ are formed by a sputtering method or an EB vapor deposition method.
The coating method is used, but this coating process is the end face (1a) from which the light of the bar-shaped semiconductor laser wafer (1) is emitted.
Must be applied only to the positive electrode surface (1b) and the negative electrode surface (1c) adjacent to them. Therefore, conventionally, as shown in FIG. 2, the bar-shaped semiconductor laser wafers (1) are bundled so that the electrode surfaces on both sides overlap each other so that only one end surface (1a) from which light is emitted is exposed. It was mounted on a jig (13) and housed in a spattering device or an EB vapor deposition device for film treatment. In this case, only the end surface (1a) to be coated is exposed, and the electrode surface (1b) (1c)
It is necessary to make the widths of the electrode surfaces (1b) and (1c) uniform so that they will not be exposed, but the current semiconductor laser wafer division technology uses the laser wafer (1) bar. Since it is not possible to make the electrode surfaces (1b) (1c) completely overlap by making the width of the electrodes uniform, the film adheres to the electrode surfaces (1b) (1c) and the film surface becomes uneven. The characteristics of the semiconductor laser wafer (1) were deteriorated.

An object of the present invention is to solve the above-mentioned drawbacks and to provide a semiconductor surface treatment jig for exposing only the light emitting end surface of a bar-shaped semiconductor laser wafer and holding the electrode surface so as not to expose it at all. It is what

Structure of the invention The semiconductor surface treatment jig of the present invention comprises a flat plate, a plurality of rectangular parallelepiped solid members which are in contact with the side surface of the semiconductor on the flat plate and are juxtaposed alternately with the semiconductor, and the juxtaposed semiconductors and the rectangular parallelepiped solid members. It is composed of a fixing jig that is held, and a semiconductor and a rectangular solid member whose one end face that emits light on the flat plate faces downward are alternately juxtaposed and held by the holding jig.
When the fixing jig is separated from the flat plate and turned upside down, only the one end face of the semiconductor is exposed to the upper side, so that the above object can be achieved.

Description of Embodiments Embodiments of the present invention will be described below with reference to the drawings. In FIG. 3, (1) is a bar-shaped semiconductor laser wafer, and (2) is a rectangular solid member obtained by cleaving a single crystal GaAs wafer, which are alternately adjacent to each other on the substrate (4) of the fixing jig (3). They are juxtaposed. (5) is a fixed part fixed to one end on the substrate (4), and (6) is slid on the substrate (4) to approach and separate to the fixed part (5) side.
A movable part for pressing and fixing the semiconductor laser wafers (1) and the rectangular parallelepiped members (2) juxtaposed on each other between the fixed part (5), (7)
Is threadedly engaged with a screw mounting portion (7) 'fixed to the other end of the board (4), and is connected to the movable portion (6) through a leaf spring (8).
It is a screw that moves (6). In the semiconductor laser wafer (1), both side surfaces constituting the electrodes are not exposed by contacting the side surfaces of the adjacent rectangular parallelepiped fixing members (2), and only one end surface (1a) that emits light is a rectangular solid solid member ( 2), the fixed part (5) and the movable part (6) are flush with the surface and exposed to the upper side. In order to expose only one end face (1a) of the semiconductor laser wafer (1) which emits light, the end face (1a) to be coated on the flat plate (9) is placed on the lower side as shown in FIG. The semiconductor laser wafer (1) and the rectangular parallelepiped fixing member (2) are placed side by side, and the solid jig (3) is attached from the upper side as shown in FIG. Or fixed part (5)
And the movable part (6) and the semiconductor laser wafer (1) and the rectangular parallelepiped fixing member (2) are arranged between them, and the flat plates (9) are piled up and turned upside down, and then the holding operation is performed. Remove from the flat plate (9) and invert the fixing jig (3) again. In the above example, a single crystal G obtained by cleaving the rectangular solid member (2) was used.
Although an aAs wafer is used, a precision-processed ceramic wafer may be used.

In the above configuration, the semiconductor laser wafer (1),
Even if the shapes and sizes are not uniform, only the end face that emits light is exposed and held, so that the protective film can be uniformly and accurately formed only on this exposed end face.

Advantageous Effects of Invention According to the semiconductor processing jig of the present invention, a semiconductor is placed side by side with a plurality of rectangular parallelepiped solid members alternately on a flat plate so that the end surface on which the coating is applied is on the lower side, and held by a fixing jig. Since the fixing jig is separated from the flat plate and turned upside down, only the end surface of the semiconductor to be coated is exposed to the upper side between the rectangular solid members and only the exposed end surface can be accurately and uniformly coated. There is no possibility that the coating film will reach the electrode surfaces on both sides, and the characteristics of the semiconductor can be improved. Also, in the case of a rectangular parallelepiped solid member, only the surface exposed flush with the end surface of the semiconductor to be coated is coated with the end surface of the semiconductor, but the side surface in contact with the semiconductor is free from the coating, so that it can be used again. .

[Brief description of drawings]

FIG. 1 is a perspective view of a bar-shaped semiconductor laser wafer, and FIG.
FIG. 3 is a perspective view of a conventional example, FIG. 3 is a perspective view of essential parts showing an embodiment of the present invention, and FIGS. 4 and 5 are side views showing an operating state. (1) ... semiconductor, (2) ... rectangular solid member, (3) ... fixing jig,
(7) ... screw, (9) ... flat plate

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Fumiko Tajiri 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. 72) Inventor Ken Hamada 1006 Kadoma, Kadoma-shi, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.

Claims (1)

[Claims] 1. A flat plate and two or more semiconductor wafers cleaved in a bar shape are arranged side by side on the flat plate alternately so as to be in contact with the side surface of the semiconductor wafer which is perpendicular to the cleavage plane.
A semiconductor surface treatment jig comprising at least one rectangular solid member, a fixing jig for holding the bar-shaped semiconductor wafer, and the rectangular solid member.