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JPH06104579B2 - Metallization method for crystallized glass surface - Google Patents
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JPH06104579B2 - Metallization method for crystallized glass surface - Google Patents

Metallization method for crystallized glass surface

Info

Publication number
JPH06104579B2
JPH06104579B2 JP7383586A JP7383586A JPH06104579B2 JP H06104579 B2 JPH06104579 B2 JP H06104579B2 JP 7383586 A JP7383586 A JP 7383586A JP 7383586 A JP7383586 A JP 7383586A JP H06104579 B2 JPH06104579 B2 JP H06104579B2
Authority
JP
Japan
Prior art keywords
crystallized glass
roughening
fluoride
crystalline phase
electroless plating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP7383586A
Other languages
Japanese (ja)
Other versions
JPS62230651A (en
Inventor
肇 中山
宏一 津山
寿郎 岡村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP7383586A priority Critical patent/JPH06104579B2/en
Priority to DE8787302681T priority patent/DE3770507D1/en
Priority to EP19870302681 priority patent/EP0240268B1/en
Priority to US07/032,248 priority patent/US4859505A/en
Publication of JPS62230651A publication Critical patent/JPS62230651A/en
Publication of JPH06104579B2 publication Critical patent/JPH06104579B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/381Improvement of the adhesion between the insulating substrate and the metal by special treatment of the substrate
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/06Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
    • C03C17/10Surface treatment of glass, not in the form of fibres or filaments, by coating with metals by deposition from the liquid phase
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/1851Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/1851Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1872Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
    • C23C18/1886Multistep pretreatment
    • C23C18/1889Multistep pretreatment with use of metal first

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Surface Treatment Of Glass (AREA)
  • Glass Compositions (AREA)
  • Chemically Coating (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は結晶化ガラス基板、結晶化ほうろう基板、結晶
化ガラス表面被覆したセラミック基板等上への回路形成
に利用される結晶化ガラス表面の金属化法に関するもの
である。
The present invention relates to a crystallized glass substrate, a crystallized enamel substrate, a crystallized glass surface-coated ceramic substrate, etc. It relates to the metallization method.

(従来の技術) 従来、結晶化ガラス表面の金属化、特に回路形成方法と
しては、(a)金属ペーストを焼き付ける厚膜法や、
(b)スパッタやCVDなどを用いる薄膜法がある。
(Prior Art) Conventionally, as a method of metallizing the surface of crystallized glass, particularly a circuit forming method, (a) a thick film method of baking a metal paste,
(B) There is a thin film method using sputtering or CVD.

しかし、(a)厚膜法では回路形成を印刷法で行なうた
め基板のスルーホール内壁や基板端部での曲面部分での
配線(回路形成)が困難であること、焼き付け温度が80
0℃を越える高温のため酸化しない貴金属ペーストを用
いなければならずコスト高になることなどの問題点があ
った。(b)薄膜法では、厚膜法と同様にスルーホール
や曲面への配線(回路形成)が困難であること、量産性
に劣ること、金属膜厚を大きくしにくいことなどの問題
点があった。
However, (a) in the thick film method, since the circuit is formed by the printing method, it is difficult to perform wiring (circuit formation) on the inner wall of the through hole of the substrate and the curved portion at the end of the substrate.
There is a problem in that a precious metal paste that does not oxidize because of a high temperature exceeding 0 ° C. has to be used and the cost becomes high. (B) Like the thick film method, the thin film method has problems such as difficulty in wiring (circuit formation) to a through hole or a curved surface, poor mass productivity, and difficulty in increasing the metal film thickness. It was

このような問題点に対して、結晶化ガラス表面にめっき
を行なう方法提案されている。例えば、特開昭53−5438
号公報、特開昭60−195078号公報に示される方法である
が、結晶化ガラス表面の粗化を、前者はフッ酸、後者は
水酸化ナトリウム融解液の処理で行っている。
For such problems, a method of plating on the surface of crystallized glass has been proposed. For example, JP-A-53-5438
In the method disclosed in Japanese Patent Laid-Open No. 60-195078, the surface of the crystallized glass is roughened by hydrofluoric acid for the former and sodium hydroxide melt for the latter.

(発明が解決しようとする問題点) フッ酸や水酸化ナトリウム融解液を用いると腐食力が強
すぎるため結晶化ガラス表面の結晶質相、非結晶質相の
区別なく溶解され粗化面の凹凸の制御が困難な上に、表
面付近に脆弱層を形成するため、その後に施す無電解め
っき膜がこの脆弱層と共に剥離し、安定的な密着力を得
ることが困難であった。
(Problems to be solved by the invention) When hydrofluoric acid or sodium hydroxide melt is used, the corrosive force is too strong and the crystalline phase and the amorphous phase on the surface of the crystallized glass are dissolved without distinction and the roughened surface is uneven. In addition, it is difficult to control and the fragile layer is formed in the vicinity of the surface, so that the electroless plating film applied thereafter peels off together with the fragile layer, and it is difficult to obtain a stable adhesive force.

また、フッ酸や水酸化ナトリウム融解液は取扱いが危険
である。
Also, handling hydrofluoric acid or sodium hydroxide melt is dangerous.

本発明は、密着力に優れる結晶化ガラス表面の金属化法
を提供するものである。
The present invention provides a method for metallizing a surface of crystallized glass having excellent adhesion.

(問題点を解決するための手段) 本発明は結晶質相と非晶質相から成る結晶化ガラス表面
を、 (a)結晶質相に比べ非晶質相の溶解速度の大きい粗化
液で粗化する工程、 (b)無電解めっき反応を開始させることのできる触媒
を付与する工程、 (c)無電解めっきを行なう工程、 とを含むことを特徴とするものである。
(Means for Solving Problems) In the present invention, the surface of a crystallized glass composed of a crystalline phase and an amorphous phase is treated with (a) a roughening liquid having a higher dissolution rate of the amorphous phase than that of the crystalline phase. A roughening step, (b) a step of applying a catalyst capable of starting an electroless plating reaction, and (c) a step of performing electroless plating.

本発明で用いる粗化液は中性もしくは中性に近い水溶液
で、結晶化ガラスの組成の異なる相に対して溶解性が異
なるものである。
The roughening liquid used in the present invention is a neutral or near-neutral aqueous solution and has different solubilities with respect to phases having different compositions of crystallized glass.

一般に、酸化物の耐水、耐酸、耐アルカリ性は以下のよ
うになっている〔成瀬省著「ガラス光学」(昭33)共立
出版〕。
Generally, the water resistance, acid resistance, and alkali resistance of oxides are as follows [Naruse Ministry "Glass Optics" (Sho 33) Kyoritsu Shuppan).

耐水性:ZrO2>Al2O3>TiO2>ZnO>MgO>PbO>CaO>BaO 耐酸性:ZrO2>Al2O3>ZnO>CaO>TiO2>PbO>MgO>BaO 耐NaOH性:ZrO2》Al2O3,TiO2,ZnO,CaO 耐Na2CO3性:ZaO2》Al2O3,TiO2,ZnO>CaO,BaO,PbO,MgO 結晶化ガラス中の結晶質成分としてBaO,CaO,MgO,PbO等
を用いた場合、結晶質相は強酸、強アルカリの両方に溶
解されやすい。そこで、中性または中性に近い水溶液で
非晶質相を強く溶解し、結晶質相を残すような処理をす
ることで、その後に施すめっき膜との密着を大きくする
ような粗化面を形成することが出来る。
Water resistance: ZrO 2 > Al 2 O 3 > TiO 2 > ZnO > MgO > PbO > CaO > BaO Acid resistance: ZrO 2 > Al 2 O 3 > ZnO > CaO > TiO 2 > PbO > MgO > BaO NaOH resistance : ZrO 2 》 Al 2 O 3 , TiO 2 , ZnO, CaO Na 2 CO 3 resistance: ZaO 2 》 Al 2 O 3 , TiO 2 , ZnO> CaO, BaO, PbO, MgO As crystalline components in crystallized glass When BaO, CaO, MgO, PbO, etc. are used, the crystalline phase is easily dissolved in both strong acid and strong alkali. Therefore, by performing a treatment that strongly dissolves the amorphous phase in a neutral or near-neutral aqueous solution and leaves the crystalline phase, a roughened surface that increases the adhesion with the plating film to be applied later is obtained. Can be formed.

結晶化ガラスは結晶質相と非晶質相とより成っている
が、結晶質相が数種の相(組成)より成っている場合が
あり、本発明では結晶質相の少なくとも一つの相に比べ
非晶質相の溶解速度の大きい粗化液で粗化をする。その
結果、粗化面には結晶質相の少なくと一つの相が残り、
その後に施すめっき膜との密着力を大きくするように粗
化面を形成することが出来る。
Although crystallized glass is composed of a crystalline phase and an amorphous phase, the crystalline phase may be composed of several kinds of phases (compositions). In the present invention, at least one of the crystalline phases is used. Roughening is performed with a roughening liquid having a higher dissolution rate of the amorphous phase. As a result, at least one crystalline phase remains on the roughened surface,
The roughened surface can be formed so as to increase the adhesion with the plating film applied thereafter.

本発明では、例えば、ホウ素、ケイ素、マグネシウム、
バリウムを15<B2O3<35、10<SiO2<3O、40<Mg+CaO
+BaO<65の割合(モル%)で含む結晶化ガラスが使用
出来る。
In the present invention, for example, boron, silicon, magnesium,
Barium is added to 15 <B 2 O 3 <35, 10 <SiO 2 <3O, 40 <Mg + CaO
Crystallized glass containing + BaO <65 (mol%) can be used.

この結晶化ガラスはBaOを多く含む結晶質相と、ホウケ
イ酸ガラス質相から成る。結晶質相は長さ20μm以下の
針状で非晶質マトリック中に無数に分散している。
This crystallized glass consists of a BaO-rich crystalline phase and a borosilicate glassy phase. The crystalline phase is acicular with a length of 20 μm or less and is dispersed innumerably in the amorphous matrix.

粗化は、例えば、フッ化ナトリウム、フッ化カリウム、
フッ化アンモニウム、フッ化ホウ素酸、テトラフルオロ
ホウ酸アンモニウム等のフッ化物塩水溶液、市販のもの
では、無電解ニッケルめっき液「ブルーシューマー」
(pH6.4)(日本カニゼン製商品名)等により行うこと
が出来る。粗化液のpHは2〜13、好ましくは5〜10、更
に好ましくは6〜9である。
Roughening is, for example, sodium fluoride, potassium fluoride,
An aqueous solution of a fluoride salt such as ammonium fluoride, boron fluoride, or ammonium tetrafluoroborate, or a commercially available electroless nickel plating solution "Blue-Summer"
(PH6.4) (product name of Kanigen Japan) and the like. The pH of the roughening solution is 2 to 13, preferably 5 to 10, and more preferably 6 to 9.

無電解めっき反応を開始させることの出来る触媒として
は、絶縁基板面に無電解めっきにより回路形成を行う前
処理として使用される通常の触媒、特にアルカリ性、中
性のPb系等の触媒が好ましい。無電解めっきも印刷配線
の製造で、絶縁基板面に回路形成を行うための通常の無
電解めっき液により行うことが出来る。
As the catalyst capable of initiating the electroless plating reaction, an ordinary catalyst used as a pretreatment for forming a circuit on the surface of the insulating substrate by electroless plating, particularly an alkaline or neutral Pb-based catalyst is preferable. Electroless plating can also be performed in the production of printed wiring with a normal electroless plating solution for forming a circuit on the surface of an insulating substrate.

実施例1,2、比較例1,2,3 B2O3=20,SiO2=15,MgO=55,BaO=5,SrO=5の組成(モル
%)の結晶化ガラスを、それぞれ無電解ニッケルめっき
液「ブルーシューマー」(日本カニゼン製商品名)を粗
化液とし、75〜80℃、30分間浸漬(実施例1)、フッ化
ナトリウム12g/l水溶液(pH7.4)を粗化液とし、75〜80
℃、50分間浸漬(実施例2)10Nの塩酸300ml/l水溶液を
粗化液とし、室温で1分間浸漬(比較例1)、フッ酸
(室温)に20分間浸漬(比較例2)pH13のNaOH水溶液75
〜80℃に10分間浸漬(比較例3)した。
Example 1,2, Comparative Examples 1,2,3 B 2 O 3 = 20, SiO 2 = 15, MgO = 55, BaO = 5, SrO = 5 composition (mol%) of the crystallized glass, respectively Electrolytic nickel plating solution "Blue-Summer" (trade name of Kanigen Japan Co., Ltd.) is used as a roughening solution, immersed at 75 to 80 ° C for 30 minutes (Example 1), and a 12 g / l aqueous solution of sodium fluoride (pH 7.4) is roughened. As liquid, 75-80
Immersion at 50 ° C for 50 minutes (Example 2) Using a 10N hydrochloric acid 300 ml / l aqueous solution as a roughening solution, immersion at room temperature for 1 minute (Comparative Example 1), hydrofluoric acid (room temperature) for 20 minutes (Comparative Example 2) pH 13 NaOH aqueous solution 75
It was immersed in -80 ° C for 10 minutes (Comparative Example 3).

アルカリ性のPbシーディング液に2分間浸漬した後、ア
ルカリ性の還元処理液に1分間浸漬し、ホルマリンを還
元剤とする無電解銅めっき液(pH12,70℃)に2時間浸
漬した。銅めっき膜−結晶化ガラス間の密着力(kg/m
m2)は、 実施例1:1.4、実施例2:1.3 比較例1〜3:0.2以下 であった。
After dipping in an alkaline Pb seeding solution for 2 minutes, it was dipped in an alkaline reduction solution for 1 minute, and then dipped in an electroless copper plating solution (pH 12, 70 ° C.) containing formalin as a reducing agent for 2 hours. Adhesion between copper plating film and crystallized glass (kg / m
m 2 ) was as follows: Example 1: 1.4, Example 2: 1.3 and Comparative Examples 1 to 3: 0.2.

粗化後の結晶化ガラス基板表面について、結晶質相に多
く含まれるBaのXMA(X線マイクロアナライザ)分析に
よってBa(結晶成分)の変化を調べたところ、実施例1,
2は増加していたが、比較例1は減少、比較例2,3は変化
なしであった。又、SEM(走査型電子顕微鏡)で粗化後
表面を観察した結果を次に示す。
The surface of the crystallized glass substrate after roughening was examined for changes in Ba (crystal component) by XMA (X-ray microanalyzer) analysis of Ba contained in a large amount in the crystalline phase.
2 increased, but Comparative Example 1 decreased and Comparative Examples 2 and 3 did not change. The results of observing the surface after roughening with an SEM (scanning electron microscope) are shown below.

実施例1:長さ2〜3μm、幅0.5〜1μmの針状物が積
み重なっている。
Example 1: Needles having a length of 2 to 3 μm and a width of 0.5 to 1 μm are stacked.

実施例2:0.5〜2μmの球状物が浮き上がっている。Example 2: Spherical particles of 0.5 to 2 μm are raised.

比較例1:全面に2μm以下の長さの亀裂が2μm以下の
間隔で存在。
Comparative Example 1: Cracks having a length of 2 μm or less are present on the entire surface at intervals of 2 μm or less.

比較例2:幅0.1〜0.5μm、長さ5μm程度亀裂が2〜5
μmの間隔で存在。
Comparative Example 2: Width 0.1 to 0.5 μm, length about 5 μm 2 to 5 cracks
Present at intervals of μm.

比較例3:元の表面状態のほとんど変化なし。Comparative Example 3: Almost no change in the original surface condition.

(発明の効果) 本発明により結晶化ガラスの表面にめっきにより金属膜
を密着性よく形成することができた。
(Effect of the Invention) According to the present invention, a metal film could be formed on the surface of crystallized glass by plating with good adhesion.

これによって、めっき法による回路形成も可能となり、
これまで困難であったスルーホールや曲面部分での配線
(回路形成)が容易となり、導体回路のシート抵抗値を
小さくでき、焼成を伴なわないため、基板の反りや寸法
変化がないなど特性面が向上する他、コストの大幅な低
下が見込まれる。
This makes it possible to form circuits by plating,
Wiring (circuit formation) in through-holes and curved surfaces, which has been difficult until now, becomes easy, the sheet resistance value of the conductor circuit can be reduced, and there is no firing, so there is no warpage or dimensional change in the board. It is expected that the cost will be improved and the cost will be drastically reduced.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】ホウ素、ケイ素、マグネシウム、バリウム
を、 15<B2O3<35、10<SiO2<3O、40<MgO+CaO+BaO<65
の割合で含む結晶化ガラスであって、かつ、結晶質相と
非晶質相から成る結晶化ガラス表面を、 (a)結晶質相に比べ非晶質相の溶解速度の大きいフッ
化ナトリウム、フッ化カリウム、フッ化アンモニウム、
フッ化ホウ素酸、テトラフルオロホウ酸アンモニウム等
のフッ化物塩水溶液で粗化する工程、 (b)無電解めっき反応を開始させることのできる触媒
を付与する工程、 (c)無電解めっきを行う工程、 とを含むことを特徴とする結晶化ガラス表面の金属化
法。
1. Boron, silicon, magnesium, and barium are added to 15 <B 2 O 3 <35, 10 <SiO 2 <3O, 40 <MgO + CaO + BaO <65.
And a crystallized glass surface comprising a crystalline phase and an amorphous phase, wherein (a) sodium fluoride having a higher dissolution rate of the amorphous phase than the crystalline phase, Potassium fluoride, ammonium fluoride,
A step of roughening with a fluoride salt aqueous solution such as fluoroboric acid or ammonium tetrafluoroborate; (b) a step of applying a catalyst capable of initiating an electroless plating reaction; (c) a step of performing electroless plating A method for metallizing a surface of a crystallized glass, comprising:
【請求項2】粗化液のpHが6〜9であることを特徴とす
る特許請求の範囲第1項に記載の結晶化ガラス表面の金
属化法。
2. The method for metallizing the surface of a crystallized glass according to claim 1, wherein the pH of the roughening liquid is 6-9.
JP7383586A 1986-03-31 1986-03-31 Metallization method for crystallized glass surface Expired - Lifetime JPH06104579B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP7383586A JPH06104579B2 (en) 1986-03-31 1986-03-31 Metallization method for crystallized glass surface
DE8787302681T DE3770507D1 (en) 1986-03-31 1987-03-27 METHOD FOR METALLIZING GLASS SURFACES.
EP19870302681 EP0240268B1 (en) 1986-03-31 1987-03-27 Process for metallizing glass surface
US07/032,248 US4859505A (en) 1986-03-31 1987-03-31 Process for metallizing glass surface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7383586A JPH06104579B2 (en) 1986-03-31 1986-03-31 Metallization method for crystallized glass surface

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JPS62230651A JPS62230651A (en) 1987-10-09
JPH06104579B2 true JPH06104579B2 (en) 1994-12-21

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JP7383586A Expired - Lifetime JPH06104579B2 (en) 1986-03-31 1986-03-31 Metallization method for crystallized glass surface

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JP2013080905A (en) * 2011-09-22 2013-05-02 Hoya Corp Substrate manufacturing method, wiring board manufacturing method, glass substrate, and wiring board

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JPS62230651A (en) 1987-10-09

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