JPH0793488B2 - Enameled wiring board manufacturing method - Google Patents
Enameled wiring board manufacturing methodInfo
- Publication number
- JPH0793488B2 JPH0793488B2 JP61073837A JP7383786A JPH0793488B2 JP H0793488 B2 JPH0793488 B2 JP H0793488B2 JP 61073837 A JP61073837 A JP 61073837A JP 7383786 A JP7383786 A JP 7383786A JP H0793488 B2 JPH0793488 B2 JP H0793488B2
- Authority
- JP
- Japan
- Prior art keywords
- enamel
- wiring board
- electroless plating
- substrate
- fluoride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Glass Compositions (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
【発明の詳細な説明】 (産業上の利用分野) 本発明は、ほうろう基板に無電解めっきにより回路形成
を行うほうろう配線板の製造法に関するものである。Description: TECHNICAL FIELD The present invention relates to a method for producing an enamel wiring board for forming a circuit on an enamel substrate by electroless plating.
(従来の技術) 従来、ほうろう基板への回路形成は金属ペーストをスク
リーン印刷した後500℃以上の温度で焼き付ける厚膜法
を用いていた。(Prior Art) Conventionally, the circuit formation on the enamel substrate has used a thick film method in which a metal paste is screen-printed and then baked at a temperature of 500 ° C. or higher.
しかし、厚膜法では(i)スルーホール内印刷が困難で
あること、(ii)ファインパターンが困難であること、
(iii)高温での焼成を繰り返す(スルーホール付両面
板の場合3回)ため基板にそりやクラック等の発生する
おそれがあること、(iv)空気中焼成するためには貴金
属ペーストを使うためコスト高になること、(v)銀ペ
ースト等を焼成する場合は窒素雰囲気の管理が困難な上
900℃を越える高温で焼成するためほうろう層の耐熱温
度を上回るか、または金属芯の変態点を越える(鉄のα
→γ変態点:910℃)ため歪が発生しやすいことなどの問
題点があった。However, in the thick film method, (i) it is difficult to print in through holes, (ii) it is difficult to make fine patterns,
(Iii) Since firing at high temperature is repeated (three times for double-sided board with through holes), warpage or cracks may occur on the substrate. (Iv) Precious metal paste is used for firing in air. In addition to the high cost, (v) it is difficult to control the nitrogen atmosphere when firing silver paste, etc.
Since it is fired at a high temperature exceeding 900 ° C, it exceeds the heat resistant temperature of the enamel layer or exceeds the transformation point of the metal core (iron α
→ γ transformation point: 910 ° C), so there was a problem that strain was likely to occur.
このような問題点に対して、ほうろう基板表面にめっき
を行なう方法提案されている。例えば、特開昭53−5438
号公報、特開昭60−195078号公報に示される方法である
が、ほうろう基板表面の粗化を、前者はフッ酸、後者は
水酸化ナトリウム融解液の処理で行っている。For such problems, a method of plating the surface of the enamel substrate has been proposed. For example, JP-A-53-5438
In the method disclosed in Japanese Patent Application Laid-Open No. 60-195078, the surface of the enamel substrate is roughened by hydrofluoric acid for the former and sodium hydroxide melt for the latter.
(発明が解決しようとする問題点) フッ酸や水酸化ナトリウム融解液を用いると腐食力が強
すぎるためほうろう基板表面の結晶質相、非結晶質相の
区別なく溶解され粗化面の凹凸の制御が困難な上に、表
面付近に脆弱層を形成するため、その後に施す無電解め
っき膜がこの脆弱層と共に剥離し安定的な密着力を得る
ことが困難であった。また、フッ酸や水酸化ナトリウム
融解液は取扱いが危険である。(Problems to be solved by the invention) When hydrofluoric acid or a sodium hydroxide melt is used, the corrosive force is too strong and the crystalline phase and the amorphous phase on the surface of the enamel substrate are dissolved without distinction, resulting in unevenness on the roughened surface. In addition to being difficult to control, a brittle layer is formed near the surface, so that it is difficult to obtain a stable adhesion force because the electroless plating film applied thereafter peels off together with the brittle layer. Also, handling hydrofluoric acid or sodium hydroxide melt is dangerous.
本発明は、無電解めっき膜の密着力に優れるほうろう配
線板の製造法を提供するものである。The present invention provides a method for producing an enameled wiring board having excellent adhesion to an electroless plated film.
(問題点を解決するための手段) 本発明は、金属芯を結晶質相と非晶質相とから成る結晶
化釉ほうろう層によって被覆したほうろう基板を用い、
結晶質相に比べ非晶質相の溶解速度の大きい粗化液で表
面を粗化しめっき膜との密着性を促進させ、次にこの粗
化形状を破壊しないように無電解めっき反応を開始させ
ることのできる触媒を付与した後に無電解めっきを行な
うことでほうろう基板上に密着性のよいめっき膜を形成
するようにしたものである。(Means for Solving the Problems) The present invention uses an enamel substrate in which a metal core is coated with a crystallization glaze enamel layer composed of a crystalline phase and an amorphous phase,
Roughening solution, which has a higher dissolution rate for the amorphous phase than the crystalline phase, roughens the surface to promote adhesion with the plating film, and then starts the electroless plating reaction so as not to destroy this roughened shape. The electroless plating is performed after applying a catalyst capable of forming a plating film having good adhesion on the enamel substrate.
本発明で用いる粗化液は中性もしくは中性に近い水溶液
で、結晶化ガラスの組成の異なる相に対して溶解性が異
なるものである。The roughening solution used in the present invention is a neutral or near-neutral aqueous solution, and has different solubilities in phases having different compositions of crystallized glass.
一般に、酸化物の耐水、耐酸、耐アルカリ性は以下のよ
うになっている〔成瀬省著「ガラス光学」(昭33)共立
出版〕。Generally, the water resistance, acid resistance, and alkali resistance of oxides are as follows [Naruse Ministry "Glass Optics" (Sho 33) Kyoritsu Shuppan).
耐水性:ZrO2>Al2O3>TiO2>ZnO>MgO>PbO>CaO>BaO 耐酸性:ZrO2>Al2O3>ZnO>CaO>TiO2>PbO>MgO>BaO 耐NaOH性:ZrO2》Al2O3,TiO2,ZnO,CaO 耐Na2CO3性:ZaO2》Al2O3,TiO2,ZnO>CaO,BaO,PbO,MgO 結晶化ガラス中の結晶質成分としてBaO,CaO,MgO,PbO等
を用いた場合、結晶質相は強酸、強アルカリの両方に溶
解されやすい。中性または中性に近い水溶液で非晶質相
を強く溶解し、結晶質相を残すような処理をすること
で、その後に施すめっき膜との密着を大きくするような
粗化面を形成することが出来る。Water resistance: ZrO 2 > Al 2 O 3 > TiO 2 > ZnO > MgO > PbO > CaO > BaO Acid resistance: ZrO 2 > Al 2 O 3 > ZnO > CaO > TiO 2 > PbO > MgO > BaO NaOH resistance: ZrO 2 》 Al 2 O 3 , TiO 2 , ZnO, CaO resistance to Na 2 CO 3 : ZaO 2 》 Al 2 O 3 , TiO 2 , ZnO> CaO, BaO, PbO, MgO As crystalline components in crystallized glass When BaO, CaO, MgO, PbO, etc. are used, the crystalline phase is easily dissolved in both strong acid and strong alkali. By performing a treatment that strongly dissolves the amorphous phase in a neutral or near-neutral aqueous solution and leaves the crystalline phase, a roughened surface is formed that increases the adhesion with the plating film to be applied later. You can
結晶化ガラスは結晶質相と非晶質相とより成っている
が、結晶質相が数種の相(組成)より成っている場合が
あり、本発明では結晶質相の少なくとも一つの相に比べ
非晶質相の溶解速度の大きい粗化液で粗化をする。その
結果、粗化面には結晶質相の少なくとも一つの相が残
り、その後に施すめっき膜との密着力を大きくするよう
に粗化面を形成することが出来る。Although crystallized glass is composed of a crystalline phase and an amorphous phase, the crystalline phase may be composed of several kinds of phases (compositions). In the present invention, at least one of the crystalline phases is used. Roughening is performed with a roughening liquid having a higher dissolution rate of the amorphous phase. As a result, at least one phase of the crystalline phase remains on the roughened surface, and the roughened surface can be formed so as to increase the adhesion with the plating film to be applied thereafter.
本発明では、例えば、ホウ素、ケイ素、マグネシウム、
バリウムを15<B2O3<35、10<SiO2<30、40<MgO+CaO
+BaO<65の割合(モル%)で含む結晶化釉が使用出来
る。In the present invention, for example, boron, silicon, magnesium,
Barium is added to 15 <B 2 O 3 <35, 10 <SiO 2 <30, 40 <MgO + CaO
Crystallized glaze containing + BaO <65 (mol%) can be used.
このほうろう層はBaOを多く含む結晶質相と、ホウケイ
酸ガラス質相から成る。結晶質相は長さ20μm以下の針
状で非晶質マトリック中に無数に分散している。This enamel layer consists of a BaO-rich crystalline phase and a borosilicate glassy phase. The crystalline phase is acicular with a length of 20 μm or less and is dispersed innumerably in the amorphous matrix.
粗化は、例えば、フッ化ナトリウム、フッ化カリウム、
フッ化アンモニウム、フッ化ホウ素酸、テトラフルオロ
ホウ酸アンモニウム等のフッ化物塩水溶液、等により行
うことが出来る。粗化液のpHは2〜13、好ましくは5〜
10、更に好ましくは6〜9である。Roughening is, for example, sodium fluoride, potassium fluoride,
It can be carried out with an aqueous solution of a fluoride salt such as ammonium fluoride, fluoroboric acid or ammonium tetrafluoroborate. The pH of the roughening solution is 2 to 13, preferably 5 to
It is 10, more preferably 6-9.
無電解めっき反応を開始させることの出来る触媒として
は、絶縁基板面に無電解めっきにより回路形成を行う前
処理として使用される通常の触媒、特にアルカリ性、中
性のPb系等の触媒が好ましい。無電解めっきも印刷配線
の製造で、絶縁基板面に回路形成を行うための通常の無
電解めっき液により行うことが出来る。As the catalyst capable of initiating the electroless plating reaction, an ordinary catalyst used as a pretreatment for forming a circuit on the surface of the insulating substrate by electroless plating, particularly an alkaline or neutral Pb-based catalyst is preferable. Electroless plating can also be performed in the production of printed wiring with a normal electroless plating solution for forming a circuit on the surface of an insulating substrate.
無電解めっきで回路形成を行うには、少なくとも最初に
無電解めっき法が含まれておればよい。In order to form a circuit by electroless plating, at least the electroless plating method may be included at the beginning.
即ち、基板にめっきレジストを形成し無電解めっきのみ
で回路を形成する方法、基板全面に無電解めっきを行い
めっきレジストを形成し電気めっきを行った後めっきレ
ジストを剥離しクイックエッチングして回路を形成する
方法、基板全面に無電解めっきを行い更に電気めっきを
行った後エッチングレジストを形成しエッチングを行い
回路を形成する方法等種種の方法が使用される。That is, a method of forming a plating resist on the substrate and forming a circuit only by electroless plating, electroless plating on the entire surface of the substrate to form a plating resist and electroplating, then removing the plating resist and performing quick etching to form a circuit. Various methods such as a method of forming a circuit, a method of forming a circuit by electroless plating on the entire surface of the substrate and further performing electroplating, and then forming an etching resist, and forming a circuit are used.
実施例 第1図により説明する。Embodiment An explanation will be given with reference to FIG.
B2O3=20,SiO2=15,MgO=55,BaO=5,SrO=5の組成(モ
ル%)の結晶化釉ほうろう層1によって被覆したほうろ
う基板を用いた。2は金属芯である(第1図(a))。
粗化液としはフッ化カリウム20g/水溶液(pH7)を使
用した。スルーホール付ほうろう基板を80℃の上記粗化
液に50分間浸漬させた後NaOHを1g/含むPbシーディン
グ液に2分間浸漬し、次に同じくアルカリ性の還元処理
液に1分間浸漬した後乾燥した(第1図(b))。この
基板に対してスクリーン印刷法でめっきレジスト3を形
成した後(第1図(c))ホルマリンを還元剤とする無
電解銅めっきを行いスルーホール内にもランドにも銅め
っき回路を形成する(第1図(d))。An enamel substrate covered with a crystallized glaze enamel layer 1 having a composition (mol%) of B 2 O 3 = 20, SiO 2 = 15, MgO = 55, BaO = 5, SrO = 5 was used. 2 is a metal core (FIG. 1 (a)).
As the roughening liquid, 20 g of potassium fluoride / water solution (pH 7) was used. The enamel board with through holes was immersed in the roughening solution at 80 ° C for 50 minutes, then in a Pb seeding solution containing 1 g of NaOH for 2 minutes, then in an alkaline reduction solution for 1 minute and then dried. (Fig. 1 (b)). After forming a plating resist 3 on this substrate by a screen printing method (FIG. 1 (c)), electroless copper plating using formalin as a reducing agent is performed to form a copper plating circuit both in the through hole and the land. (FIG. 1 (d)).
このようにして得られた回路の基板に対する密着力は1k
g/mm2以上あった。The adhesion of the circuit thus obtained to the substrate is 1k
It was over g / mm 2 .
一方、粗化の前後にXMA(X線マイクロアナライザ)分
析による基板表面の元素分析を行ったところ、粗化後に
結晶質相を形成しているBaの存在比が著しく増大してい
た。又SEM(走査型電子顕微鏡)による表面観察でも粗
化面は0.5〜2μmの球状物の積み重なりであった。On the other hand, elemental analysis of the substrate surface by XMA (X-ray microanalyzer) analysis before and after roughening revealed that the abundance ratio of Ba forming a crystalline phase after roughening significantly increased. Also, the surface observation by SEM (scanning electron microscope) revealed that the roughened surface was a stack of spherical particles of 0.5 to 2 μm.
(発明の効果) これまで(i)スルーホール部付近にほうろう基板独特
のほうろう層の盛り上がりを生じること、(ii)ほうろ
う基板のスルーホール徑は1mm以上のものが多いことな
どの理由によりスルーホール内へのインクの十分な吸引
が出来ずスルーホール印刷の自由化が困難であった。こ
れに対して本発明の方法に於いては、基板と両面と同時
にスルーホール内部まで回路が形成できる。また、ホト
レジストを採用することにより、厚膜法では困難な微細
加工ができるためファインパターン化が可能である。さ
らに、高価な貴金属厚膜ペーストを用いないため回路形
成のコストを格段に下げることが可能となる。(Effect of the invention) Through holes have been so far (i) the enamel layer peculiar to the enamel substrate is raised in the vicinity of the through holes, and (ii) the through holes of the enamel substrate are often 1 mm or more. Ink could not be sufficiently sucked into the interior, and it was difficult to liberate through-hole printing. On the other hand, in the method of the present invention, a circuit can be formed on both sides of the substrate and inside the through hole at the same time. Further, by adopting a photoresist, fine patterning is possible because fine processing, which is difficult with the thick film method, can be performed. Further, since the expensive precious metal thick film paste is not used, the cost of circuit formation can be significantly reduced.
第1図は本発明の方法を説明するための断面図である。 1……結晶化ほうろう層 2……金属芯 3……レジスト 4……めっき膜 FIG. 1 is a sectional view for explaining the method of the present invention. 1 ... Crystallized enamel layer 2 ... Metal core 3 ... Resist 4 ... Plating film
───────────────────────────────────────────────────── フロントページの続き (72)発明者 岡村 寿郎 茨城県下館市大字小川1500番地 日立化成 工業株式会社下館研究所内 (56)参考文献 特開 昭58−157195(JP,A) 特開 昭60−21829(JP,A) ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Toshiro Okamura 1500 Ogawa, Shimodate, Ibaraki Shimodate Research Laboratory, Hitachi Chemical Co., Ltd. (56) Reference JP-A-58-157195 (JP, A) JP-A-60 -21829 (JP, A)
Claims (3)
晶化釉ほうろう層によって被覆したほうろう基板を用い
て、 (a)フッ化物塩を含み、そのpHが2〜13の粗化液でほ
うろう層を粗化する工程、 (b)無電解めっき反応を開始させることのできる触媒
を付与する工程、 (c)無電解めっきを行なう工程、 とを含むことを特徴とするほうろう配線板の製造法。1. A enamel substrate having a metal core coated with a crystallized glaze enamel layer consisting of a crystalline phase and an amorphous phase, wherein (a) a fluoride salt is contained and its pH is from 2 to 13. And a step of roughening the enamel layer with a chemical solution, (b) a step of applying a catalyst capable of initiating an electroless plating reaction, and (c) a step of performing electroless plating. Board manufacturing method.
マグネシウム、バリウムを15<B2O3<35、10<SiO2<3
0、40<MgO+CaO+BaO<65の割合(モル%)で含む結晶
化ガラスである特許請求の範囲第1項記載のほうろう配
線板の製造法。2. The crystallized glaze enamel layer comprises boron, silicon,
Add magnesium and barium to 15 <B 2 O 3 <35, 10 <SiO 2 <3
The method for producing an enamel wiring board according to claim 1, which is a crystallized glass containing 0, 40 <MgO + CaO + BaO <65 in a ratio (mol%).
カリウム、フッ化ホウ素酸、テトラフルオロホウ酸アン
モニウムのいずれかである特許請求の範囲第1項又は第
2項記載のほうろう配線板の製造法。3. The enamel wiring board according to claim 1 or 2, wherein the fluoride salt is any one of sodium fluoride, potassium fluoride, fluoroboric acid and ammonium tetrafluoroborate. Manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61073837A JPH0793488B2 (en) | 1986-03-31 | 1986-03-31 | Enameled wiring board manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61073837A JPH0793488B2 (en) | 1986-03-31 | 1986-03-31 | Enameled wiring board manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62230085A JPS62230085A (en) | 1987-10-08 |
| JPH0793488B2 true JPH0793488B2 (en) | 1995-10-09 |
Family
ID=13529649
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61073837A Expired - Lifetime JPH0793488B2 (en) | 1986-03-31 | 1986-03-31 | Enameled wiring board manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0793488B2 (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58157195A (en) * | 1982-03-12 | 1983-09-19 | 株式会社フジクラ | Porcelain board roughed on surface and electric circuit board utilizing same porcelain board |
| JPS6021829A (en) * | 1983-07-13 | 1985-02-04 | Hitachi Chem Co Ltd | Glass composition |
| JPS6018994A (en) * | 1983-07-13 | 1985-01-31 | 日立化成工業株式会社 | Method of producing porcelain substrate for printed circuit board |
-
1986
- 1986-03-31 JP JP61073837A patent/JPH0793488B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62230085A (en) | 1987-10-08 |
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