JPH0636459B2 - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPH0636459B2 JPH0636459B2 JP17439688A JP17439688A JPH0636459B2 JP H0636459 B2 JPH0636459 B2 JP H0636459B2 JP 17439688 A JP17439688 A JP 17439688A JP 17439688 A JP17439688 A JP 17439688A JP H0636459 B2 JPH0636459 B2 JP H0636459B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- wavelength
- distributed
- wavelengths
- oscillation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 22
- 230000010355 oscillation Effects 0.000 claims description 18
- 239000002131 composite material Substances 0.000 claims description 5
- 230000001360 synchronised effect Effects 0.000 claims 1
- 230000003321 amplification Effects 0.000 description 7
- 238000003199 nucleic acid amplification method Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 230000000737 periodic effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1215—Multiplicity of periods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1215—Multiplicity of periods
- H01S5/1218—Multiplicity of periods in superstructured configuration, e.g. more than one period in an alternate sequence
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、安定化された多波長同時発振を行う半導体
レーザに関するものであり、特に、いわゆる分布反射型
（ＤＢＲ）半導体レーザの反射部が、多波長において同
時に高い反射率を得るべく、その構造が単一周期ではな
く、多波長に対応する周期を合成したフーリェ合成波形
構造を有する半導体レーザ装置に関するものである。Description: TECHNICAL FIELD The present invention relates to a semiconductor laser that performs stabilized multi-wavelength simultaneous oscillation, and in particular, a reflection portion of a so-called distributed reflection (DBR) semiconductor laser is provided. The present invention relates to a semiconductor laser device whose structure is not a single period but has a Fourier-combined waveform structure in which periods corresponding to multiple wavelengths are combined in order to obtain high reflectance simultaneously at multiple wavelengths.
〔従来の技術〕 従来の多波長同時発振半導体レーザは、第４図のごと
く、１枚の基板１上に各々異なる場所に１波長に対し１
個ずつ半導体レーザの活性部２と分布反射部３を作り、
それぞれに設けた電極リード線４から独立に電流を供給
して発振させていた。これにより、比較的小サイズで多
波長同時発振が得られる。第４図の場合はλ１，λ２，
λ３，λ４，λ５の５波長が得られる。なお，ｌ１，…
…，ｌ５は分布反射部３の周期を示す。[Prior Art] A conventional multi-wavelength simultaneous oscillation semiconductor laser has, as shown in FIG. 4, one for each wavelength at different places on one substrate 1.
The active part 2 and the distributed reflection part 3 of the semiconductor laser are made one by one,
A current was independently supplied from the electrode lead wires 4 provided for each to oscillate. As a result, multiwavelength simultaneous oscillation can be obtained with a relatively small size. In the case of FIG. 4, λ 1 , λ 2 ,
Five wavelengths of λ 3 , λ 4 , and λ 5 are obtained. In addition, l 1 , ...
..., 15 indicates the period of the distributed Bragg reflector 3.
しかしながら、上記従来技術においては、以下のような
問題点があった。However, the above-mentioned conventional techniques have the following problems.
各々の波長用の半導体レーザの活性部２および分布
反射部３は基板１上の別位置に作製されるため、活性部
２および分布反射部３の結晶の不均一性、加工の精度の
限界および熱分布のくいちがいのため、各々の発振波長
λ１，……，λ５の精度にばらつきがあり、そのため実
際上は波長間隔を５Å以下にはできなかった。また、発
熱のため、同一の基板１上には５波長程度しか組み込め
なかった。Since the active portion 2 and the distributed Bragg reflector 3 of the semiconductor laser for each wavelength are formed at different positions on the substrate 1, the crystallinity of the active portion 2 and the distributed Bragg reflector 3 is not uniform, and the processing accuracy is limited. Due to the disparity in the heat distribution, there was variation in the accuracy of the oscillation wavelengths λ 1 , ..., λ 5 , and in practice it was not possible to make the wavelength interval less than 5Å. Further, due to heat generation, only about 5 wavelengths could be incorporated on the same substrate 1.
独立の位置に１波長ずつレーザを作るため、より多
波長（１００〜１０００）にするためにはサイズが巨大
化してしまう。Since lasers are produced one wavelength at a time at independent positions, the size becomes enormous in order to increase the number of wavelengths (100 to 1000).
この発明は、上記の問題点を解消するためになされたも
ので、小型でかつ多波長の発振を可能とした半導体レー
ザ装置を提供することを目的とする。The present invention has been made to solve the above problems, and an object of the present invention is to provide a semiconductor laser device that is compact and capable of oscillating multiple wavelengths.
この発明にかかる半導体レーザ装置は、分布反射部ある
いは分布帰還部の周期構造を、多波長用のフーリェ合成
波形構造としたものである。In the semiconductor laser device according to the present invention, the periodic structure of the distributed reflection part or distributed feedback part is a Fourier composite waveform structure for multiple wavelengths.
この発明においては、分布反射部あるいは分布帰還部の
周期構造が、多波長用のフーリェ合成波形構造となって
いるために、このフーリエ合成波形に含まれる多波長の
レーザ光が出力される。In the present invention, since the periodic structure of the distributed reflector or distributed feedback part has a Fourier composite waveform structure for multiple wavelengths, multiwavelength laser light included in this Fourier composite waveform is output.
第１図はこの発明の一実施例を示す側面図である。この
実施例は簡単化するため、２波長同時発振の場合を示し
ている。分布反射型半導体レーザ（ＤＢＲ）において
は、その発振波長λは、分布反射部３の周期をｌとする
と、 で与えられる。ここで、ｎｅは分布反射部３の屈折率で
ある。したがって、周期ｌを変えればそれに応じて異な
る波長で発振する。FIG. 1 is a side view showing an embodiment of the present invention. For simplification, this embodiment shows a case of simultaneous two-wavelength oscillation. In a distributed Bragg reflector semiconductor laser (DBR), its oscillation wavelength λ is given by the following formula: Given in. Here, n e is the refractive index of the distributed Bragg reflector 3. Therefore, if the period 1 is changed, the laser beam oscillates at a different wavelength accordingly.
もし、この分布反射部３の周期構造を第２図のように、
つまり、第２図(i) と(ii)とを合わせた(iii) のように の２周期 の合成波になるように構成すれば、この部分の活性部２
側から見た反射率は、波長λ１およびλ２で高くなるこ
とは容易に理解される。このような構造は、電子ビーム
画法，パターン縮小フォトエッチング法などで容易に作
製し得る。さらに、この構造は２波長に限らず、最大１
０００波長程度まで構成可能であり、結果として最大１
０００波長程度までの同時多重発振が可能である。この
ようにして得た反射体とレーザの組み合わせにおいて、
λ１，λ２の間隔がある程度（いわゆる均一広がり幅１
〜３ＧＨＺ）より大きければ、波長λ１，λ２，……の
光は同時発振が可能となり、かつ波長λ１，λ２，……
は独立して設定（加工段階で）可能である。If the periodic structure of the distributed reflector 3 is as shown in FIG.
In other words, as shown in (iii) of Fig. 2 (i) and (ii) combined. 2 cycles If it is configured to be a composite wave of
It is easily understood that the reflectance seen from the side is higher at wavelengths λ 1 and λ 2 . Such a structure can be easily manufactured by an electron beam drawing method, a pattern reduction photoetching method, or the like. Furthermore, this structure is not limited to two wavelengths, but a maximum of 1
Configurable up to about 000 wavelengths, resulting in a maximum of 1
Simultaneous multiple oscillation up to about 000 wavelengths is possible. In the combination of the reflector and the laser thus obtained,
There is a certain interval between λ 1 and λ 2 (so-called uniform spread width 1
Greater than ~3GH Z), the wavelength lambda 1, lambda 2, the light of the ...... becomes possible to simultaneously oscillate, and the wavelength lambda 1, lambda 2, ......
Can be set independently (during processing).
第２図に示したごとく、２（多）周期の合成であるよう
な構造をしたＤＢＲ部をもった分布反射部３の反射率
は、各々の周期ｌ１，ｌ２，……に相当する波長λ１，
λ２，……で高い反射率を示す。一方、半導体レーザの
活性部２の増幅度はかなりの、いわゆる不均一広がり
（１０ＴＨＺ以上）を示す。この不均一広がりによっ
て、波長λ１，λ２，……の光は、その間隔が充分広け
れば独立に発振し得る。通常の分布反射部をもたない端
面反射型レーザにおいては、しばしば多重軸モード発振
を示す。その理由は半導体物質の不均一広がり現象によ
る。この場合、その発振波長は λ＝２Ｌ・ｎｅ／ｍ で決る。ここでＬは半導体レーザの両端の距離、ｎｅは
屈折率、ｍはある整数である。これを第３図に示す。As shown in FIG. 2, the reflectance of the distributed Bragg reflector 3 having the DBR portion having a structure of two (multi) period synthesis corresponds to each period l 1 , l 2 , .... Wavelength λ 1 ,
High reflectance is shown at λ 2 , .... On the other hand, the amplification factor of the active portion 2 of the semiconductor laser exhibits a considerable so-called non-uniform spread (10 TH Z or more). Due to this non-uniform spread, light of wavelengths λ 1 , λ 2 , ... Can oscillate independently if the distance is sufficiently wide. An edge-reflection type laser which does not have a normal distributed reflector often exhibits multi-axis mode oscillation. The reason for this is the phenomenon of non-uniform spreading of the semiconductor material. In this case, the oscillation wavelength is determined by λ = 2L · n e / m. Where L is the distance between both ends of the semiconductor laser, n e is the refractive index, m is an is an integer. This is shown in FIG.
第３図で、は適当な注入電流を与えたときの半導体レ
ーザの増幅度、は半導体レーザの両端面を反射面とし
たときの多重発振の様子を示す。FIG. 3 shows the amplification factor of the semiconductor laser when an appropriate injection current is applied, and the state of multiple oscillation when both end faces of the semiconductor laser are reflection surfaces.
このように、半導体レーザの活性部２の増幅度は不均一
広がりをもつので、その不均一広がりの範囲内ではある
が、異なる波長λ１，λ２，……で高い反射率をもつ反
射体を所要のレーザ本体に装着すれば、波長λ１，
λ２，……で同時に発振する。As described above, since the amplification factor of the active portion 2 of the semiconductor laser has a non-uniform spread, a reflector having a high reflectance at different wavelengths λ 1 , λ 2 , ... If is attached to the required laser body, the wavelength λ 1 ,
Oscillate simultaneously at λ 2 , ....
なお、第３図において、増幅度は波長によって変化する
ので、各々の波長λ１，λ２，……に対する分布反射部
３の反射率が一定なら、出力は増幅度に略比例すること
になり、中心部と周辺部とでは出力に大きな差を生ず
る。このような出力特性は実用上好ましくない。この発
明によれば、簡単な工夫によりこれを解消できる。すな
わち、第２図おいて、波長λ１に対する周期構造の振幅
ａ１，λ１に対する振幅ａ２などを、各々その波長に対
する活性部２の増幅度に反比例する反射率を与えるべ
く、各々異なる値とする。そうすれば、その反射率を含
めた全体の増幅度を各波長に対して、略一定となし得
る。結果として出力を波長λ１，λ２，……に対してほ
ぼ一定に設定できる。In FIG. 3, since the amplification degree changes depending on the wavelength, if the reflectance of the distributed Bragg reflector 3 for each wavelength λ 1 , λ 2 , ... Is constant, the output is substantially proportional to the amplification degree. , A large difference occurs in the output between the central part and the peripheral part. Such output characteristics are not practically preferable. According to the present invention, this can be solved by a simple device. In other words, keep Figure 2, the amplitude a 1 of the periodic structure with respect to the wavelength lambda 1, and the amplitude a 2 for lambda 1, to each give a reflectivity which is inversely proportional to the amplification of the active portion 2 with respect to the wavelength, respectively different values And Then, the overall amplification including the reflectance can be made substantially constant for each wavelength. As a result, the output can be set almost constant with respect to the wavelengths λ 1 , λ 2 , ....
この発明は以上説明したように、分布反射部あるいは分
布帰還部の周期構造を、多波長用のフーリェ合成波形構
造としたので、従来不可能であった半導体レーザの超多
重発振ができる。すなわち、第４図の従来例のように、
同一基板上に構成したレーザでは、波長間隔５Åでせい
ぜい５多重発振が限度であったが、この発明によれば、
０．０５Å間隔で１０００多重まで可能となる。なぜな
ら、同一基板上の同一位置にレーザおよび分布反射部を
作製するために、結晶の歪、熱効果はすべての波長に対
し、同一の効果を与えるため、発振波長が設計値に対し
てランダムに変動し、たがいに重なり合って干渉するこ
とはあり得ない。変動は存在するにしても、すべての発
振線に対して、同時に同一の方向に変動する。さらに、
ＤＢＲあるいはＤＦＢレーザにおいては単一波長動作を
させると、第３図中の１本だけが発振するため、それ以
外の波長領域のエネルギーは、実はすべて無駄になって
いる。この発明によれば、この部分もすべて発振に寄与
するため、全体としてエネルギー利用効率は極めて高く
なる。As described above, according to the present invention, since the periodic structure of the distributed reflector or distributed feedback part is the Fourier-combined waveform structure for multiple wavelengths, supermultiple oscillation of a semiconductor laser, which has been impossible in the past, can be performed. That is, as in the conventional example of FIG.
In the lasers constructed on the same substrate, the wavelength spacing was 5Å, and at most 5 multiple oscillations were limited. However, according to the present invention,
Up to 1000 multiplexes are possible at 0.05Å intervals. Because the laser and distributed reflector are formed at the same position on the same substrate, the strain and thermal effects of the crystal have the same effect on all wavelengths, so the oscillation wavelength is random with respect to the design value. It cannot fluctuate, overlap and interfere with each other. Even if there is fluctuation, it fluctuates in the same direction at the same time for all oscillation lines. further,
When a single wavelength operation is performed in a DBR or DFB laser, only one of the wavelengths in FIG. 3 oscillates, and the energy in the other wavelength regions is actually wasted. According to the present invention, all of this portion also contributes to oscillation, so that the energy utilization efficiency becomes extremely high as a whole.
第１図はこの発明の一実施例を示す側面図、第２図はこ
の発明の分布反射部の構成を説明する図、第３図は半導
体レーザの多重軸モード発振の説明図、第４図は従来の
多波長同時発振半導体レーザの一例を示す斜視図であ
る。 図中、１は基板、２は半導体レーザの活性部、３は分布
反射部、４は電極リード線である。FIG. 1 is a side view showing an embodiment of the present invention, FIG. 2 is a view for explaining the structure of a distributed reflector of the present invention, FIG. 3 is an explanatory view of multi-axis mode oscillation of a semiconductor laser, and FIG. FIG. 6 is a perspective view showing an example of a conventional multiwavelength simultaneous oscillation semiconductor laser. In the figure, 1 is a substrate, 2 is an active part of a semiconductor laser, 3 is a distributed reflector, and 4 is an electrode lead wire.
Claims (1)
半導体レーザ装置において、多波長同時発振を得るため
に、分布反射部あるいは分布帰還部の同期構造を、多波
長用のフーリェ合成波形構造としたことを特徴とする半
導体レーザ装置。1. In a distributed Bragg reflection type or distributed feedback type semiconductor laser device, in order to obtain multiwavelength simultaneous oscillation, the synchronous structure of the distributed reflection part or distributed feedback part is a Fourier composite waveform structure for multiple wavelengths. A semiconductor laser device characterized by the above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17439688A JPH0636459B2 (en) | 1988-07-13 | 1988-07-13 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17439688A JPH0636459B2 (en) | 1988-07-13 | 1988-07-13 | Semiconductor laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0225087A JPH0225087A (en) | 1990-01-26 |
| JPH0636459B2 true JPH0636459B2 (en) | 1994-05-11 |
Family
ID=15977852
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17439688A Expired - Lifetime JPH0636459B2 (en) | 1988-07-13 | 1988-07-13 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0636459B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2832920B2 (en) * | 1992-03-06 | 1998-12-09 | 日本電信電話株式会社 | Semiconductor laser with wavelength sweep function |
| JP2770898B2 (en) * | 1992-08-12 | 1998-07-02 | 日本電信電話株式会社 | Tunable semiconductor laser |
| WO2001011401A1 (en) * | 1999-08-05 | 2001-02-15 | Daniel Levner | Synthesis of supergratings by fourier methods |
-
1988
- 1988-07-13 JP JP17439688A patent/JPH0636459B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0225087A (en) | 1990-01-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |