JPH0638506B2 - Zener diode - Google Patents
Zener diodeInfo
- Publication number
- JPH0638506B2 JPH0638506B2 JP62096472A JP9647287A JPH0638506B2 JP H0638506 B2 JPH0638506 B2 JP H0638506B2 JP 62096472 A JP62096472 A JP 62096472A JP 9647287 A JP9647287 A JP 9647287A JP H0638506 B2 JPH0638506 B2 JP H0638506B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- zener diode
- diffusion
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000009792 diffusion process Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 10
- 239000012535 impurity Substances 0.000 description 9
- 238000002955 isolation Methods 0.000 description 8
- 238000000926 separation method Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
Landscapes
- Bipolar Integrated Circuits (AREA)
Description
【発明の詳細な説明】 (イ) 産業上の利用分野 本発明はツェナーダイオード、特に半導体集積回路に組
み込まれるツェナーダイオードに関するものである。The present invention relates to a Zener diode, and more particularly to a Zener diode incorporated in a semiconductor integrated circuit.
(ロ) 従来の技術 従来のツェナーダイオード(21)は例えば特開昭５８−８
５５７１号公報や特願昭６０−２８８３３３号が詳しく
説明をしている。(B) Conventional Technology A conventional Zener diode ( 21 ) is disclosed in, for example, Japanese Patent Laid-Open No. 58-8.
Japanese Patent No. 5571 and Japanese Patent Application No. 60-288333 have detailed explanations.
例えば第２図に示す如く、Ｐ＋型の半導体基板(22)、こ
の半導体基板(22)上に形成したＮ型のエピタキシャル層
(23)と、前記半導体基板(22)とエピタキシャル層(23)と
の間に形成した埋込層(24)と、前記エピタキシャル層(2
3)表面より前記半導体基板(22)まで到達するＰ＋型の分
離領域(25)と、このＰ＋型の分離領域(25)により島状に
分離された島領域(26)と、この島領域(26)の表面に形成
されたＰ＋型のアノード領域(27)と、このアノード領域
(27)内に形成されたＮ＋型のカソード領域(28)とを備
え、前記Ｐ＋型のアノード領域(27)とＮ＋型のカソード
領域(28)とでＰＮ接合を形成しツェナーダイオードを形
成していた。For example, as shown in FIG. 2, a P + type semiconductor substrate (22) and an N type epitaxial layer formed on this semiconductor substrate (22)
(23), a buried layer (24) formed between the semiconductor substrate (22) and the epitaxial layer (23), and the epitaxial layer (2
3) A P + -type isolation region (25) reaching the semiconductor substrate (22) from the surface, an island region (26) separated into islands by the P + -type isolation region (25), and this island A P + -type anode region (27) formed on the surface of the region (26) and this anode region
(27) and a formed N + type cathode region (28) in the P + -type anode region (27) and N + type cathode region (28) and de-formed zener diode PN junction Had formed.
(ハ) 発明が解決しようとする問題点 上述の如き構成のツェナーダイオードに於いて、ツェナ
ー電圧ＶＺはアノード領域(27)とカソード領域(28)の不
純物濃度に依って決定され、このアノード領域(27)およ
びカソード領域(28)の濃度を変えないかぎり、ツェナー
電圧ＶＺは一定である問題点を有している。(C) Problems to be Solved by the Invention In the Zener diode having the above-described configuration, the Zener voltage V Z is determined by the impurity concentration of the anode region (27) and the cathode region (28), and the anode region There is a problem that the Zener voltage V Z is constant unless the concentrations of (27) and the cathode region (28) are changed.
(ニ) 問題点を解決するための手段 本発明は上述の問題点に鑑みてなされ、少なくとも前記
アノード領域(5)またはカソード領域(7)の横方向による
濃度勾配がある領域(5)にＰＮ接合(8)を有し、このＰＮ
接合(8)位置を濃度勾配がある領域(5)の所定位置に設け
ることによりツェナー電圧を任意に決定することで解決
するものである。(D) Means for Solving the Problems The present invention has been made in view of the above problems, and PN is provided in at least the region (5) in which the anode region (5) or the cathode region (7) has a lateral concentration gradient. It has a junction (8) and this PN
This is solved by arranging the junction (8) position at a predetermined position in the region (5) having a concentration gradient and arbitrarily determining the Zener voltage.
(ホ) 作用 例えばアノード領域(5)を熱拡散により形成する場合、
拡散孔を介して不純物が拡散され基板(2)の表面より基
板(2)の裏面に向って濃度が低下すると共に、拡散孔よ
り横方向へも拡散されており、拡散孔より横方向に濃度
が低下し不純物の濃度勾配が形成される。(E) Action For example, when the anode region (5) is formed by thermal diffusion,
Impurities are diffused through the diffusion holes and the concentration decreases from the front surface of the substrate (2) toward the back surface of the substrate (2), and is also diffused laterally from the diffusion holes, and the concentration is horizontal from the diffusion holes. And a concentration gradient of impurities is formed.
この濃度勾配を有する領域(5)にカソード領域(7)を重畳
させて拡散するとツェナー電圧ＶＺは決定され、更には
このカソード領域(7)の位置を第１図の太い矢印の如く
横方向にずらすことでＰＮ接合部(8)の濃度を変えられ
るのでツェナー電圧を任意に変えることができる。When the cathode region (7) is superposed on the region (5) having this concentration gradient and diffused, the Zener voltage V Z is determined, and further, the position of this cathode region (7) is changed in the lateral direction as shown by the thick arrow in FIG. Since the concentration of the PN junction (8) can be changed by shifting it to, the Zener voltage can be changed arbitrarily.
(ヘ) 実施例 以下に本発明の実施例を第１図を参照しながら説明す
る。本発明のツェナーダイオード(1)は第１図に示さ
れ、先ずＰ型の半導体基板(2)と、この半導体基板(2)上
に形成したＮ型のエピタキシャル層(3)と、前記半導体
基板(2)と前記エピタキシャル層(3)との間に形成された
Ｎ＋型の埋込層(4)と、前記エピタキシャル層(3)表面よ
り前記半導体基板(2)まで到達するＰ＋型の分離領域(5)
と、このＰ＋型の分離領域(5)により島状に分離された
島領域(6)と、この島領域(6)と少なくとも一方の分離領
域(5)に重畳するＮ＋型の拡散領域(7)とを有し分離領域
(5)と拡散領域(7)でツェナーダイオード(1)が構成され
る。(F) Example An example of the present invention will be described below with reference to FIG. The Zener diode ( 1 ) of the present invention is shown in FIG. 1. First, a P-type semiconductor substrate (2), an N-type epitaxial layer (3) formed on the semiconductor substrate (2), and the semiconductor substrate An N + type buried layer (4) formed between the (2) and the epitaxial layer (3), and a P + type buried layer (4) reaching from the surface of the epitaxial layer (3) to the semiconductor substrate (2). Separation Area (5)
And an island region (6) separated into islands by the P + type separation region (5), and an N + type diffusion region overlapping the island region (6) and at least one of the separation regions (5) (7) with and separation area
Zener diode ( 1 ) is composed of (5) and diffusion region (7).
ここではＰ＋型の分離領域(5)がアノード領域、Ｎ＋型
の拡散領域(7)がカソード領域と対応する。Here, the P + type isolation region (5) corresponds to the anode region, and the N + type diffusion region (7) corresponds to the cathode region.
本発明の特徴とする所は前記Ｎ型の島領域(6)とＰ＋型
の分離領域(5)に重畳するＮ＋型の拡散領域(7)にある。The feature of the present invention resides in the N + type diffusion region (7) overlapping the N type island region (6) and the P + type separation region (5).
例えばＰ＋型の分離領域(5)の表面の矢印Ｅで示す所は
この分離領域(5)を形成する際の拡散孔の一方のエッジ
を示すものであり、この矢印Ｅより右方向に不純物濃度
勾配を有する。一方矢印Ｅ′の所は前記Ｎ＋型の拡散領
域(7)を形成する際の拡散孔の一方のエッジを示すもの
であり矢印Ｅ′より左方向に不純物濃度勾配を有する。For example, a portion indicated by an arrow E on the surface of the P + -type isolation region (5) indicates one edge of the diffusion hole when the isolation region (5) is formed, and impurities to the right of the arrow E It has a concentration gradient. On the other hand, the arrow E'indicates one edge of the diffusion hole when the N + type diffusion region (7) is formed, and has an impurity concentration gradient to the left of the arrow E '.
従ってカソード領域と対応するＮ＋型の拡散領域(7)を
第１図に示す太い矢印の方向に変えることでＰＮ接合部
(8)の不純物濃度を変えることが可能となりツェナー電
圧ＶＺを任意に決めることができる。Therefore, by changing the N + type diffusion region (7) corresponding to the cathode region in the direction of the thick arrow shown in FIG.
The impurity concentration of (8) can be changed, and the Zener voltage V Z can be arbitrarily determined.
ただし前述した濃度勾配はできるだけなだらかな方が好
ましく、前記拡散領域(7)のマスク合せ精度によるツェ
ナー電圧ＶＺの偏差を小さくできる。また上述した構成
は１例であり拡散による濃度勾配の有る領域であれば良
く、図示の如き構成とは限らない。However, the above-mentioned concentration gradient is preferably as gentle as possible, and the deviation of the Zener voltage V Z due to the mask alignment accuracy of the diffusion region (7) can be reduced. Further, the above-described configuration is an example, and it may be a region having a concentration gradient due to diffusion, and is not limited to the configuration shown in the drawing.
また分離領域(5)のみ横方向の不純物濃度があれば良
く、拡散領域(7)は横方向の不純物濃度がなくても良
い。例えば分離領域(5)を熱拡散し、この領域の横方向
不純物濃度を有する所にイオン注入で拡散領域を形成し
てもできる。Further, only the isolation region (5) needs to have a lateral impurity concentration, and the diffusion region (7) does not need to have a lateral impurity concentration. For example, the isolation region (5) may be thermally diffused and a diffusion region may be formed by ion implantation at a portion having a lateral impurity concentration in this region.
(ト) 発明の効果 以上説明した如く、少なくとも前記アノード領域(5)ま
たはカソード領域(7)の横方向による濃度勾配がある領
域にＰＮ接合(8)を有し、このＰＮ接合(8)位置を濃度勾
配がある領域(5)の所定位置に設けることでツェナー電
圧を任意に決定できる。(G) Effect of the Invention As described above, the PN junction (8) is provided at least in the region having the lateral concentration gradient of the anode region (5) or the cathode region (7), and the PN junction (8) position The zener voltage can be arbitrarily determined by providing the above in a predetermined position of the region (5) having the concentration gradient.
第１図は本発明のツェナーダイオードの断面図、第２図
は従来のツェナーダイオードの断面図である。 (1)はツェナーダイオード、(2)は半導体基板、(3)はエ
ピタキシャル層、(4)は埋込層、(5)は分離領域、(6)は
島領域、(7)は拡散領域、(8)はＰＮ接合部である。FIG. 1 is a sectional view of a Zener diode of the present invention, and FIG. 2 is a sectional view of a conventional Zener diode. ( 1 ) is a Zener diode, (2) is a semiconductor substrate, (3) is an epitaxial layer, (4) is a buried layer, (5) is an isolation region, (6) is an island region, (7) is a diffusion region, (8) is a PN junction.
Claims (1)
で形成されるツェナーダイオードに於いて、 前記アノード領域またはカソード領域の一方の領域の横
方向拡散による濃度勾配がある領域に前記ＰＮ接合を形
成したことを特徴とするツェナーダイオード。1. A Zener diode formed by a PN junction between an anode region and a cathode region, wherein the PN junction is formed in a region having a concentration gradient due to lateral diffusion of one of the anode region and the cathode region. Zener diode characterized by doing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62096472A JPH0638506B2 (en) | 1987-04-20 | 1987-04-20 | Zener diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62096472A JPH0638506B2 (en) | 1987-04-20 | 1987-04-20 | Zener diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63261760A JPS63261760A (en) | 1988-10-28 |
| JPH0638506B2 true JPH0638506B2 (en) | 1994-05-18 |
Family
ID=14165983
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62096472A Expired - Lifetime JPH0638506B2 (en) | 1987-04-20 | 1987-04-20 | Zener diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0638506B2 (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5516376A (en) * | 1978-07-24 | 1980-02-05 | Teijin Ltd | Heating structure |
-
1987
- 1987-04-20 JP JP62096472A patent/JPH0638506B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63261760A (en) | 1988-10-28 |
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