JPH0640526B2 - Thermal head - Google Patents
Thermal headInfo
- Publication number
- JPH0640526B2 JPH0640526B2 JP60267867A JP26786785A JPH0640526B2 JP H0640526 B2 JPH0640526 B2 JP H0640526B2 JP 60267867 A JP60267867 A JP 60267867A JP 26786785 A JP26786785 A JP 26786785A JP H0640526 B2 JPH0640526 B2 JP H0640526B2
- Authority
- JP
- Japan
- Prior art keywords
- thermal head
- metal compound
- layer
- substrate
- heating resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010438 heat treatment Methods 0.000 claims description 21
- 150000002736 metal compounds Chemical class 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 11
- 239000011651 chromium Chemical group 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 239000003513 alkali Substances 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 239000002585 base Substances 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical group [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical group [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Chemical group 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 239000010955 niobium Chemical group 0.000 claims 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical group [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 239000010936 titanium Chemical group 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052723 transition metal Inorganic materials 0.000 claims 1
- 150000003624 transition metals Chemical class 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Chemical group 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 27
- 238000000034 method Methods 0.000 description 12
- 239000010408 film Substances 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 4
- 239000002356 single layer Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007651 thermal printing Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
Landscapes
- Electronic Switches (AREA)
- Non-Adjustable Resistors (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、ファクシミリやプリンタ等の感熱印刷用のサ
ーマルヘッドに関し、特に安定した信頼性の高い発熱抵
抗体に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermal head for thermal printing such as a facsimile and a printer, and more particularly to a stable and highly reliable heating resistor.
従来の技術 感熱印刷用のサーマルヘッドは、その発熱抵抗体の形成
法により厚膜サーマルヘッドと薄膜サーマルヘッドに大
別できる。厚膜サーマルヘッドは、スクリーン印刷等の
いわゆる厚膜技術により形成され、製造コストが安価で
あることと耐久性に優れた特徴を有する。薄膜サーマル
ヘッドは蒸着技術やスパッタ技術等のいわゆる薄膜技術
により形成され、ファインパターン化が可能であり印字
品質が高く、かつ、印字速度が速い等の特徴を有する。2. Description of the Related Art Thermal heads for thermal printing can be broadly classified into thick film thermal heads and thin film thermal heads depending on the method of forming the heating resistor. The thick film thermal head is formed by a so-called thick film technique such as screen printing, and is characterized by low manufacturing cost and excellent durability. The thin film thermal head is formed by a so-called thin film technique such as a vapor deposition technique or a sputtering technique, and has features such that fine patterning is possible, high printing quality is obtained, and printing speed is high.
近年、高速サーマルヘッドの要望が高まり発熱抵抗体に
印字される電力が高くなりつゝある。従来、開発された
発熱抵抗体には、Ta2N,TaSix,TaS
iOx,TiC,ZrB,NiCr,NbSi等の金属
化合物を掲げることができる。In recent years, the demand for high-speed thermal heads has increased, and the power printed on heating resistors has increased. Conventionally, a heating resistor that is developed, Ta 2 N, TaSi x, TaS
i O x, it can be listed TiC, ZrB, NiCr, a metal compound such NbSi.
発明が解決しようとする問題点 従来の発熱抵抗体は、前記金属化合物の一層から成るた
め、駆動時の電力が高いと、抵抗体の抵抗値の変化率が
大きく、かつ、抵抗体が剥離するという欠点を有してい
た。Problems to be Solved by the Invention Since the conventional heating resistor is composed of one layer of the metal compound, when the driving power is high, the rate of change of the resistance value of the resistor is large and the resistor peels off. It had a drawback.
問題点を解決するための手段 発熱抵抗体を“金属化合物の酸化層/金属化合物/金属
化合物の酸化層”の三層構造とする。Means for Solving the Problems The heating resistor has a three-layer structure of “oxide layer of metal compound / metal compound / oxide layer of metal compound”.
作用 本発明は上記の手段を用いることにより第1の層である
金属化合物の酸化層が下地の放熱基板と発熱体との付着
力を高め、かつ、熱膨張率の差による熱ひずみに対する
緩衝層の作用をする。また、第3の層である金属化合物
の酸化層が、上部保護膜との付着力を高めるとともに熱
ひずみに対する緩衝層の作用をする。さらにこれら2つ
の層が、主な発熱抵抗層である金属化合物層(第2の
層)の酸化を抑制し、抵抗値の変化をおさえる作用を有
するものである。Action The present invention uses the above means to enhance the adhesive force between the heat radiating substrate and the heat radiating substrate as the first layer, which is the oxide layer of the metal compound, and to buffer the thermal strain due to the difference in the coefficient of thermal expansion. To act. The oxide layer of the metal compound, which is the third layer, enhances the adhesive force with the upper protective film and acts as a buffer layer against thermal strain. Further, these two layers have the function of suppressing the oxidation of the metal compound layer (second layer), which is the main heating resistance layer, and suppressing the change in resistance value.
実施例 第1図は、サーマルヘッドの断面図である。1は基板
で、Mg2B2O5,BaMg2Si2O7のような低
アルカリ性の結晶化ガラスを用いたホーロ基板である。
2は発熱抵抗体で、第1表に示したTaSi系金属化合
物を、アルゴン分圧を6Pa、必要に応じて酸系分圧を
0.1Paとした混合ガス雰囲気中で、TaSiのターゲ
ットを用いDCスパッタ法により形成した。Embodiment FIG. 1 is a sectional view of a thermal head. Reference numeral 1 is a substrate, which is a hollow substrate using a low-alkali crystallized glass such as Mg 2 B 2 O 5 or BaMg 2 Si 2 O 7 .
Reference numeral 2 is a heating resistor, which is a TaSi-based metal compound shown in Table 1 and used a TaSi target in a mixed gas atmosphere with an argon partial pressure of 6 Pa and an acid partial pressure of 0.1 Pa as needed. It was formed by the DC sputtering method.
形成した薄膜抵抗体の比抵抗は、TaSiOx(x=
0.4〜1.5;分析値)は1〜7×10-2Ω・cmであ
り、またTaSiは、ほぼこれより2ケタ低い値であっ
た。 The specific resistance of the formed thin film resistor is TaSiO x (x =
0.4 to 1.5; analysis value) was 1 to 7 × 10 −2 Ω · cm, and TaSi was a value that was almost double digits lower than this.
この発熱抵抗体をドライエッチング法でパターン化し
た。その上に蒸着法でクロム及び銅を積層し、選択エッ
チング法で電力供給用のリード電極3を形成した。4,
5は、それぞれ保護膜と耐摩耗層で、発熱抵抗体の酸化
防止、耐摩耗を目的としたものでありRFスパッタ法に
よるSiO2(1μm)及びSiC(4μm)の積層膜
である。また、パターン形成したサーマルヘッドは、8
本/mmのものである。The heating resistor was patterned by the dry etching method. Chromium and copper were laminated thereon by a vapor deposition method, and a lead electrode 3 for power supply was formed by a selective etching method. 4,
Reference numeral 5 denotes a protective film and a wear resistant layer, respectively, which are for the purpose of preventing oxidation of the heating resistor and wear resistance, and are a laminated film of SiO 2 (1 μm) and SiC (4 μm) formed by the RF sputtering method. In addition, the patterned thermal head has 8
Books / mm.
今、上記サーマルヘッドに、各ドット当り0.5W,4
msecのパルスを16msecの間隔で連続印加した時の発熱
抵抗体の抵抗変化率を第2図に示す。同図から明らかな
ように本発明に係るものNO.3は、従来のNO.1及びNO.
2に比べて長寿命である。また、本実験中において、従
来のNO.1は基板より部分的に剥離したが、NO.3の発熱
抵抗体は、安定に存在した。Now, with the above thermal head, 0.5W, 4 for each dot
FIG. 2 shows the resistance change rate of the heating resistor when a msec pulse is continuously applied at 16 msec intervals. As is clear from the figure, the NO. 3 according to the present invention is the conventional NO. 1 and NO.
It has a longer life than No.2. Further, during the experiment, the conventional NO.1 was partially peeled from the substrate, but the heating resistor of NO.3 existed stably.
以上の結果から明らかなように、サーマルヘッドの発熱
抵抗体として、金属化合物の単一層を用いるよりも、金
属化合物をMxXyと表現した場合、 MxXyOz/MxXy/MxXyOz′ で表わされる3層構造とすることで、従来のサーマルヘ
ッドより駆動寿命を長くできることが判った。なお、3
層の各界面の組成は、金属化合物から酸化物層へ連続的
に変化させてもよい。As is clear from the above results, when the metal compound is expressed as M x X y rather than using a single layer of the metal compound as the heating resistor of the thermal head, M x X y O z / M x X y / M x X y O z by a three-layer structure represented by 'was found to be longer than the operation life conventional thermal head. 3
The composition of each interface of the layers may be continuously changed from the metal compound to the oxide layer.
発熱抵抗体を、金属化合物の単一層から上記の3層構造
にした場合の他の実験結果を表−2に示す。なお、表−
2は、前記実施例で示した実験条件下で107回時点に
おける抵抗変化率(%)を示したものである。Table 2 shows the other experimental results when the heating resistor is made of a single layer of a metal compound and has the above-mentioned three-layer structure. Table-
2 shows the rate of resistance change (%) at the time of 10 7 times under the experimental conditions shown in the above example.
第2表の結果から明らかなように発熱抵抗体に用いる金
属化合物の種類にかゝわらず、 MxXyOz/MxXy/MxXyOz の三層構造とすることで、サーマルヘッドの駆動寿命が
飛躍的に向上できることが判った。なお、三層構造の形
成法は、単一層を形成する過程とほとんど同じ工程でで
きるものであり、単に発熱抵抗体をスパッタもしくは蒸
着する時に酸素を必要に応じて導入してやればよい。 Or the type of metal compound used for the apparent exothermic resistor from the results in Table 2ゝWarazu, be a three-layer structure of M x X y O z / M x X y / M x X y O z It was found that the driving life of the thermal head can be dramatically improved. The method of forming the three-layer structure can be performed in almost the same process as the process of forming the single layer, and oxygen may be simply introduced as necessary when the heating resistor is sputtered or vapor-deposited.
本発明は、上記の実施例に限定されるものではなく、ホ
ーロ基板の代りに、グレーズ被覆を有するアルミナ,ベ
リリア,サファイア等のセラミックス基板で良い。また
保護膜は、SiO2の代りに、A2O3,MgO,Z
rO2,Ta2O5等の酸化物または無くてもよい。さ
らに、耐摩耗層は、SiCの代りに、ダイヤモンドライ
クカーボン,Ta2O5等の硬質材料でもよい。また、
リード電極はCr/Cuの代りに、Au,A,NiC
r等でもよく特に限定されるものではない。The present invention is not limited to the above embodiment, and a ceramic substrate such as alumina, beryllia or sapphire having a glaze coating may be used instead of the holo substrate. The protective film is made of A 2 O 3 , MgO, Z instead of SiO 2.
An oxide such as rO 2 , Ta 2 O 5 or the like may be omitted. Further, the wear resistant layer may be a hard material such as diamond-like carbon or Ta 2 O 5 instead of SiC. Also,
Lead electrode is Au, A, NiC instead of Cr / Cu
It may be r or the like and is not particularly limited.
発明の効果 本発明は発熱抵抗体に金属化合物層を用い、金属化合物
層の上層及び下層に金属化合物の酸化層を設けることに
より、サーマルヘッドの駆動時における抵抗体の抵抗変
化を抑制し、長寿命でかつ、基板及び保護膜との付着力
の良い信頼性の高いサーマルヘッドを提供するものであ
る。EFFECTS OF THE INVENTION The present invention uses a metal compound layer for a heating resistor, and provides an oxide layer of a metal compound as an upper layer and a lower layer of the metal compound layer to suppress the resistance change of the resistor when the thermal head is driven, It is intended to provide a highly reliable thermal head having a long life and good adhesion to a substrate and a protective film.
第1図は本発明の一実施例に係るサーマルヘッドの断面
図、第2図は同サーマルヘッドと従来のTaSi系発熱
抵抗体を用いたサーマルヘッドのパルス駆動における抵
抗変化率を示す特性図である。 1……基板、2……発熱抵抗体、3……リード電極、4
……保護膜、5……耐摩耗層。FIG. 1 is a sectional view of a thermal head according to an embodiment of the present invention, and FIG. 2 is a characteristic diagram showing a resistance change rate in pulse driving of a thermal head using the thermal head and a conventional TaSi heating resistor. is there. 1 ... Substrate, 2 ... Heating resistor, 3 ... Lead electrode, 4
…… Protective film, 5 …… Abrasion resistant layer.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 吉田 昭彦 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (56)参考文献 特開 昭53−52997(JP,A) 特開 昭58−53459(JP,A) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Akihiko Yoshida 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (56) Reference JP-A-53-52997 (JP, A) JP-A-58-53459 (JP, A)
Claims (3)
発熱体への電力供給用リード電極具備し、前記発熱体が
金属化合物をMxXyと表わした時にMxXyOz/M
xXy/MxXyOz′,で表現できる三層構造である
ことを特徴とするサーマルヘッド。1. A heating element made of a metal compound is provided on a substrate, and a lead electrode for supplying power to the heating element is provided. When the heating element represents the metal compound as M x X y , M x X y O z / M
A thermal head having a three-layer structure that can be expressed as x X y / M x X y O z ' .
ングステン,ニオブ,モリブデン,クロム,ランタン,
ジルコニウム,バナジウム,ニッケルの遷移金属の1種
であり、Xがシリコン,チッ素,ホウ素,炭素の1種で
あることを特徴とする特許請求の範囲第1項記載のサー
マルヘッド。2. M is hafnium, tantalum, titanium, tungsten, niobium, molybdenum, chromium, lanthanum,
The thermal head according to claim 1, wherein the thermal head is one of transition metals of zirconium, vanadium and nickel, and X is one of silicon, nitrogen, boron and carbon.
ラスで被覆したホーロ基板であることを特徴とする特許
請求の範囲第1項記載のサーマルヘッド。3. The thermal head according to claim 1, which is a holo substrate in which the surface of a metal base material is coated with low-alkali crystallized glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60267867A JPH0640526B2 (en) | 1985-11-28 | 1985-11-28 | Thermal head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60267867A JPH0640526B2 (en) | 1985-11-28 | 1985-11-28 | Thermal head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62126601A JPS62126601A (en) | 1987-06-08 |
| JPH0640526B2 true JPH0640526B2 (en) | 1994-05-25 |
Family
ID=17450735
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60267867A Expired - Lifetime JPH0640526B2 (en) | 1985-11-28 | 1985-11-28 | Thermal head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0640526B2 (en) |
-
1985
- 1985-11-28 JP JP60267867A patent/JPH0640526B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62126601A (en) | 1987-06-08 |
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