JPH0643609B2 - Method for producing high silicon steel strip in continuous line - Google Patents
Method for producing high silicon steel strip in continuous lineInfo
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- JPH0643609B2 JPH0643609B2 JP61071490A JP7149086A JPH0643609B2 JP H0643609 B2 JPH0643609 B2 JP H0643609B2 JP 61071490 A JP61071490 A JP 61071490A JP 7149086 A JP7149086 A JP 7149086A JP H0643609 B2 JPH0643609 B2 JP H0643609B2
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Description
【発明の詳細な説明】 [産業上の利用分野] 本発明は、連続ラインにおける化学気相蒸着(以下、C
VDと称す)法による高珪素鋼帯の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention relates to chemical vapor deposition in a continuous line (hereinafter referred to as C
The present invention relates to a method for producing a high silicon steel strip by the VD method).
[従来の技術] 電磁鋼板として高珪素鋼板が用いられている。この種の
鋼板はSiの含有量が増すほど鉄損が低減され、Si: 6.5
%では、磁歪が0となり、最大透磁率もピークとなる等
最も優れた磁気特性を呈することが知られている。[Prior Art] A high silicon steel plate is used as an electromagnetic steel plate. With this type of steel sheet, the iron loss decreases as the Si content increases, and Si: 6.5
It is known that, when%, the magnetostriction becomes 0, and the maximum magnetic permeability also has a peak and exhibits the best magnetic characteristics.
従来、高珪素鋼板を製造する方法として、圧延法、直接
鋳造法及び滲珪法があるが、このうち圧延法はSi含有量
4%程度までは製造可能であるが、それ以上のSi含有量
では加工性が著しく悪くなるため冷間加工は困難とな
る。また直接鋳造法、所謂ストリップキャスティングは
圧延法のような加工性の問題は生じないが、未だ開発途
上の技術であり、形状不良を起し易く、特に高珪素鋼板
の製造は困難である。Conventionally, there are a rolling method, a direct casting method and a siliconizing method as a method for producing a high silicon steel sheet. Among them, the rolling method can produce a Si content up to about 4%, but a Si content higher than that can be produced. In that case, cold workability becomes difficult because the workability deteriorates significantly. Further, the direct casting method, so-called strip casting, does not cause the problem of workability unlike the rolling method, but it is still a developing technology, and it is easy to cause shape defects, and it is particularly difficult to manufacture a high silicon steel sheet.
これに対し、滲珪法は低珪素鋼を溶製して圧延により薄
板とした後、表面からSiを浸透させることにより高珪素
鋼板を製造するもので、これによれば加工性や形状不良
の問題を生じることなく高珪素鋼板を得ることができ
る。On the other hand, the siliconizing method produces low silicon steel by melting and rolling it into a thin plate, and then permeates Si from the surface to produce a high silicon steel plate. A high silicon steel plate can be obtained without causing any problems.
[発明が解決しようとする問題点] この滲珪法は、五弓、阿部により提案され、三谷、大西
らにより詳しく検討されたものであるが、従来提案され
た方法はいずれも浸透処理時間が30分以上と長く、また
CVD処理後に行われる拡散熱処理も、蒸着したSiを母
材内部に均一に拡散させる必要から比較的長時間を要
し、事実上連続ラインには適用できないという根本的な
問題がある。またCVD処理温度も1230℃程度と極めて
高いことから浸透処理後の薄鋼板の形状が極めて悪く、
加えて処理温度が高過ぎるためエツジ部が過加熱によっ
て溶解するおそれがあり、連続ラインでの安定通板が期
待できない。[Problems to be Solved by the Invention] This silicidation method was proposed by Gokyu and Abe, and was examined in detail by Mitani and Onishi. It is a long time of 30 minutes or more, and the diffusion heat treatment performed after the CVD process requires a relatively long time because the vapor-deposited Si needs to be evenly diffused inside the base material. There's a problem. Also, since the CVD treatment temperature is as high as about 1230 ° C, the shape of the thin steel sheet after the infiltration treatment is extremely poor,
In addition, since the processing temperature is too high, the edge portion may be melted by overheating, and stable threading in a continuous line cannot be expected.
加えて、Si含有量が 4.0%以上の高珪素鋼板は脆性であ
り、処理後鋼板をコイルに捲取る場合破断し易いという
問題もある。In addition, a high silicon steel sheet having a Si content of 4.0% or more is brittle, and there is a problem that the steel sheet after processing is easily broken when wound into a coil.
本発明はこのような従来技術の欠点を改善するためにな
されたもので、滲珪法を用い、連続ラインにおいて短時
間でしかも高品質の高珪素鋼帯を安定して製造すること
ができる方法の提供を目的とする。The present invention has been made to solve the above-mentioned drawbacks of the prior art, and is a method capable of stably producing a high-quality high-silicon steel strip in a continuous line in a short time in a continuous line by using a siliconizing method. For the purpose of providing.
[問題を解決するための手段] このため本発明は、鋼帯を無酸化性ガス雰囲気中で連続
的に通板させつつ、SiCl4をmol分率で5〜35%含
んだ無酸化性ガスを吹付ノズルから鋼帯面に吹き付けて
1023〜1200℃の温度で連続的に滲珪処理し、次
いでSiCl4を含まない無酸化性ガス雰囲気中でSi
を鋼帯内部に拡散させる拡散処理するに当り、該拡散処
理を、表層Si濃度が鋼帯厚み方向中心部のSi濃度よ
りも高い状態にあるうちに打ち切り、Si濃度が厚み方
向で不均一な鋼帯を得、続く冷却過程の一部において鋼
帯を磁場中冷却した後捲取ることをその基本的特徴とす
る。[Means for Solving the Problem] Therefore, according to the present invention, a non-oxidizing gas containing SiCl 4 in a mol fraction of 5 to 35% while continuously passing a steel strip in an non-oxidizing gas atmosphere. Is sprayed onto the surface of the steel strip from a spraying nozzle and continuously subjected to silicidation treatment at a temperature of 1023 to 1200 ° C., and then Si in a non-oxidizing gas atmosphere containing no SiCl 4.
In the diffusion treatment for diffusing the inside of the steel strip, the diffusion treatment is terminated while the surface layer Si concentration is higher than the Si concentration in the central portion in the thickness direction of the steel strip, and the Si concentration is uneven in the thickness direction. Its basic feature is to obtain a steel strip, cool it in a magnetic field in a part of the subsequent cooling process, and then wind it.
また本発明は、上記拡散処理−冷却後、絶縁皮膜コーテ
ィングを施し、焼付処理後捲取るようにするとともに、
磁場中冷却を、塗装焼付温度等に応じ、拡散処理後の冷
却過程または焼付処理後の冷却過程、若しくは両方の冷
却過程の一部において行うようにしたことを他の基本的
特徴とする。Further, the present invention, after the diffusion treatment-cooling, an insulating film coating is applied, and after the baking treatment, it is wound,
Another basic feature is that the cooling in the magnetic field is performed in a cooling process after the diffusion process, a cooling process after the baking process, or a part of both cooling processes according to the coating baking temperature and the like.
以下、本発明の詳細を説明する。Hereinafter, the details of the present invention will be described.
本発明において、母材たる鋼帯(出発薄鋼帯)の成分組
成は、特に限定はないが、優れた磁気特性を得るため以
下のように定めるのが好ましい。In the present invention, the composition of the steel strip (starting thin steel strip) as the base material is not particularly limited, but it is preferably determined as follows in order to obtain excellent magnetic properties.
3〜 6.5%Si−Fe合金の場合 C: 0.01 %以下、Si:0〜 4.0%、 Mn :2%以下、その他不可避不純物は極力低い方が望
ましい。In the case of 3 to 6.5% Si-Fe alloy C: 0.01% or less, Si: 0 to 4.0%, Mn: 2% or less, and other unavoidable impurities are preferably as low as possible.
センダスト合金の場合 C: 0.01 %以下、Si:4%以下、Al :3〜8%、N
i:4%以下、Mn :2%以下、Cr ,Ti などの耐食
性を増す元素5%以下、その他の不可避不純物は極力低
い方が望ましい。In the case of Sendust alloy C: 0.01% or less, Si: 4% or less, Al: 3-8%, N
It is desirable that i: 4% or less, Mn: 2% or less, elements such as Cr and Ti that increase corrosion resistance of 5% or less, and other unavoidable impurities as low as possible.
鋼帯は熱間圧延−冷間圧延により得られるものに限ら
ず、直接鋳造・急冷凝固法により得られたものでもよ
い。The steel strip is not limited to that obtained by hot rolling-cold rolling, and may be obtained by direct casting / rapid solidification.
なお、上述したように鋼帯はCVD処理により板厚が減
少するものであり、このため最終製品板厚に対し減少板
厚分を付加した板厚のものを用いる必要がある。As described above, the steel strip has a reduced thickness due to the CVD treatment, and therefore, it is necessary to use a strip having a thickness reduced by the reduced thickness of the final product.
本発明は、このような鋼帯にCVD法による滲珪処理−
拡散処理を施すことにより高珪素鋼帯を得るものであ
る。According to the present invention, such a steel strip is subjected to a siliconizing treatment by a CVD method.
A high silicon steel strip is obtained by performing a diffusion treatment.
第1図は本発明法を実施するための連続処理ラインを示
すもので、1は加熱炉、2はCVD処理炉、3は拡散処
理炉、4は冷却炉である。FIG. 1 shows a continuous processing line for carrying out the method of the present invention. 1 is a heating furnace, 2 is a CVD processing furnace, 3 is a diffusion processing furnace, and 4 is a cooling furnace.
鋼帯Sは加熱炉1でCVD処理温度またはその近傍まで
無酸化加熱された後、CVD処理炉2に導かれ、 SiCl
4 を含む無酸化性ガス雰囲気中でCVD法による滲珪処
理が施される。 SiCl 4 を含む無酸化性ガスとは、中性
或いは還元性ガスを意味し、 SiCl 4 のキャリアガスと
してはAr ,N2 ,He ,H2 ,CH4 等を使用するこ
とができる。これらキャリアガスのうち、排ガスの処理
性を考慮した場合、H2 ,CH4 等はHCl を発生させ
その処理の必要性が生じる難点があり、このような問題
を生じないAr ,He ,N2 が望ましく、さらに材料の
窒化を防止するという観点からすればこれらのうちでも
特にAr ,He が最も好ましい。The steel strip S is non-oxidatively heated up to or near the CVD processing temperature in the heating furnace 1 and then introduced into the CVD processing furnace 2 to form SiCl.
Silicidation is performed by a CVD method in an atmosphere of non-oxidizing gas containing 4 . The non-oxidizing gas containing SiCl 4 means a neutral or reducing gas, and as the carrier gas of SiCl 4 , Ar, N 2 , He, H 2 , CH 4, etc. can be used. Of these carrier gases, when considering the processability of exhaust gas, H 2 , CH 4 and the like generate HCl, which makes it necessary to process HCl, and Ar, He, N 2 which do not cause such a problem. From the viewpoint of preventing nitriding of the material, Ar and He are particularly preferable among them.
CVD処理における鋼帯表面の主反応は、 5Fe+ SiCl 4 →Fe3 Si+2FeCl 2 ↑ である。Si1原子が鋼帯面に蒸着してFe3 Si層を形成
し、Fe2原子が FeCl 2 となり、 FeCl 2 の沸点1023℃
以上の温度において気体状態で鋼帯表面から放散され
る。したがってSi原子量が28.086、Fe原子量が55.847で
あることから、鋼帯は質量減少し、これに伴い板厚も減
少することになる。ちなみに、Si3%鋼帯を母材とし、
CVD処理でSi6.5 %鋼帯を製造すると、質量は 8.7%
減少し、板厚は約 7.1%減少する。The main reaction of the steel strip surface in the CVD process, 5Fe + SiCl 4 → Fe 3 Si + 2FeCl a 2 ↑. One Si atom is vapor-deposited on the surface of the steel strip to form a Fe 3 Si layer, Fe 2 atom becomes FeCl 2 , and the boiling point of FeCl 2 is 1023 ℃.
At the above temperatures, it is emitted from the surface of the steel strip in a gaseous state. Therefore, since the Si atomic weight is 28.086 and the Fe atomic weight is 55.847, the mass of the steel strip decreases, and the plate thickness also decreases accordingly. By the way, using Si3% steel strip as the base material,
When Si6.5% steel strip is manufactured by CVD process, the mass is 8.7%.
The plate thickness is reduced by about 7.1%.
従来法においてCVD処理に時間がかかり過ぎるのは、
そのCVD処理条件に十分な検討が加えられていなかっ
たことによるものと考えられる。本発明者等が検討した
ところでは、CVD処理を迅速に行うための要素には次
のようなものがあることが判った。In the conventional method, the CVD process takes too long,
It is considered that this is because the CVD treatment conditions were not sufficiently examined. The inventors of the present invention have studied and found that there are the following elements for rapid CVD processing.
雰囲気ガス中の SiCl 4 濃度の適正化。Optimization of SiCl 4 concentration in atmospheric gas.
処理温度の適正化。 Optimization of processing temperature.
SiCl 4 の鋼帯表面への拡散及び FeCl 2 の鋼帯表
面からの放散の促進。Acceleration of diffusion of SiCl 4 to the steel strip surface and diffusion of FeCl 2 from the steel strip surface.
このため本発明ではCVD処理における雰囲気ガス中の
Si濃度及び処理温度を規定するものである。Therefore, in the present invention, in the atmosphere gas in the CVD process,
It specifies the Si concentration and the processing temperature.
まず、CVD処理における無酸化性ガス雰囲気中の SiC
l 4 濃度をmol 分率で5〜35%に規定し、このような雰
囲気中で鋼帯を連続的にCVD処理する。First, SiC in a non-oxidizing gas atmosphere in the CVD process
The l 4 concentration is specified to be 5 to 35% in terms of mol fraction, and the steel strip is subjected to continuous CVD treatment in such an atmosphere.
雰囲気中の SiCl 4 が5%未満であると期待するSi富化
効果が得られず、また、例えば鋼帯のSiを 1.0%富化す
るために5分以上も必要となる等、処理に時間がかかり
過ぎ、連続プロセス化することが困難となる。The effect of Si enrichment, which is expected to be less than 5% of SiCl 4 in the atmosphere, cannot be obtained, and more than 5 minutes are required to enrich Si of the steel strip by 1.0%. It takes too much time, and it becomes difficult to form a continuous process.
一方、 SiCl 4 を35%を超えて含有させても界面におけ
る反応が律速になり、それ以上のSi富化効果が期待でき
なくなる。On the other hand, even if SiCl 4 is contained in an amount of more than 35%, the reaction at the interface becomes rate-determining and further Si enrichment effect cannot be expected.
またCVD処理では、 SiCl 4 濃度が高いほど所謂カー
ケンダールボイドと称する大きなボイドが生成し易い。
このボイドは SiCl 4 濃度が15%程度まではほとんど見
られないが、15%をこえると生成しはじめる。しかし、
SiCl 4 濃度が35%以下では、ボイドが生成してもCV
D処理に引き続き行われる拡散処理によりほぼ完全に消
失させることができる。ボイドが消滅するために要する
時間は、拡散処理温度に強く依存し、拡散開始後に表層
Si濃度の低下に応じて処理温度を上げることにより、短
時間でボイドを消滅させることができる。しかしなが
ら、 SiCl 4 濃度が35%を越えると、発生するボイドの
径が大きくなり、また隣接するボイドが合体してさらに
大きなものとなり、長時間拡散均熱処理を施してもボイ
ドが残存してしまう。これに対し、 SiCl 4 濃度が35%
以下であれば、あまり大きなボイドにはならないため拡
散処理で消滅可能である。Also, in the CVD process, the higher the SiCl 4 concentration, the more easily large voids called so-called Kirkendall voids are generated.
This void is rarely seen up to a SiCl 4 concentration of around 15%, but begins to form when it exceeds 15%. But,
When the SiCl 4 concentration is 35% or less, CV is generated even if voids are generated.
It can be almost completely eliminated by the diffusion process performed after the D process. The time required for the voids to disappear depends strongly on the diffusion treatment temperature, and the surface layer
Voids can be eliminated in a short time by raising the treatment temperature according to the decrease in Si concentration. However, when the SiCl 4 concentration exceeds 35%, the diameter of the generated voids becomes large, and adjacent voids coalesce to become even larger, and the voids remain even after the long-time diffusion soaking treatment. In contrast, the SiCl 4 concentration is 35%
If it is below, it does not become a very large void and can be eliminated by the diffusion process.
CVD処理温度は1023〜1200℃の範囲とする。CVD処
理反応は鋼帯表面における反応であるから、この処理温
度は厳密には鋼帯表面温度である。The CVD processing temperature is in the range of 1023 to 1200 ° C. Since the CVD treatment reaction is a reaction on the surface of the steel strip, this treatment temperature is strictly the surface temperature of the steel strip.
CVD処理による反応生成物である FeCl 2 の沸点は10
23℃であり、この温度未満では FeCl 2 が鋼帯表面から
気体状態で放散されず、鋼帯表面に液体状に付着して蒸
着反応を阻害してしまう。本発明者らが行つた基礎実験
の結果では、この FeCl 2 の沸点を境に、単位時間当り
のSiの富化割合が著しく異なり、1023℃未満では蒸着速
度が小さため連続プロセスへの適用は困難である。この
ため処理温度の下限は1023℃とする。The boiling point of FeCl 2 , which is a reaction product of the CVD process, is 10
The temperature is 23 ° C., and below this temperature, FeCl 2 is not diffused from the surface of the steel strip in a gaseous state, and adheres to the surface of the steel strip in a liquid state to hinder the vapor deposition reaction. The results of the basic experiments conducted by the present inventors show that the enrichment ratio of Si per unit time is remarkably different at the boiling point of FeCl 2 as a boundary. Have difficulty. Therefore, the lower limit of processing temperature is 1023 ° C.
一方、上限を1200℃と規定する理由は次の通りである。
Fe3 Siの融点は、第3図に示すFe−Si状態図から明らか
なように1250℃であるが、発明者等の実験によれば、12
50℃より低い1230℃程度で処理した場合でも、鋼帯表面
が部分的に溶解し、また、鋼帯エッジ部分が過加熱のた
め溶解する。このように1250℃以下でも鋼帯が溶解する
のは、鋼帯表面ではFe3 Si相当のSi濃度14.5%以上にSi
が蒸着されているためであると推定される。これに対し
処理温度が1200℃以下であれば鋼帯表面の溶解は全く認
められず、また、エッジの過加熱も、鋼帯中心部の平均
温度を1200℃とすることで、1220℃程度におさえること
が可能であり、微量な溶解で済むことが実験的に確認で
きた。以上の理由から、CVD処理温度は1023℃〜1200
℃と規定する。On the other hand, the reason for defining the upper limit as 1200 ° C is as follows.
The melting point of Fe 3 Si is 1250 ° C., as is clear from the Fe-Si phase diagram shown in FIG.
Even when treated at about 1230 ° C, which is lower than 50 ° C, the surface of the steel strip is partially melted, and the edge portion of the steel strip is melted due to overheating. In this way, the steel strip melts even at temperatures below 1250 ° C because the surface of the steel strip has a Si concentration equivalent to Fe 3 Si of 14.5% or higher.
Is presumed to have been deposited. On the other hand, if the treatment temperature is 1200 ° C or less, melting of the steel strip surface is not observed at all, and overheating of the edge can be reduced to about 1220 ° C by setting the average temperature of the steel strip center to 1200 ° C. It has been confirmed experimentally that it can be suppressed and only a small amount of dissolution is required. For the above reasons, the CVD processing temperature is 1023 ° C to 1200
Specified as ° C.
CVD処理速度を鋼帯の連続処理を可能ならしめるまで
高めるには、上述したように雰囲気ガス中のSiCl4
濃度と処理温度の適正化を図ることが必要であるが、こ
れに加え鋼帯表面へのSiCl4の供給・拡散と反応副
生成物たるFeCl2の鋼帯表面から放散(離脱)とを
促進することによりCVD処理速度をより高めることが
必要となる。In order to increase the CVD processing rate to the extent that continuous processing of steel strip is possible, SiCl 4 in the atmosphere gas as described above can be used.
It is necessary to optimize the concentration and treatment temperature, but in addition to this, supply and diffusion of SiCl 4 to the steel strip surface and promotion (release) of FeCl 2 as a reaction byproduct from the steel strip surface are promoted. Therefore, it is necessary to further increase the CVD processing speed.
従来では、CVD処理で反応ガスを大きく流動させる
と、蒸着層にボイドが発生し、また蒸着層の純度も低下
するとされ、このためガス流動は必要最小限にとどめる
という考え方が定着していた。しかし本発明者等の研究
では、このようにガス流動が抑えられることにより、反
応ガスの母材界面への拡散移動、及び反応副生成物の界
面表層からの離脱がスムースに行われず、このため処理
に長時間を要すること、さらにはガス流動が抑えられる
ためCVD処理炉内の反応ガス濃度に分布を生じ、この
結果蒸着膜厚の不均一化を招くことが判った。In the past, when a reaction gas was largely flowed in the CVD process, voids were generated in the vapor deposition layer and the purity of the vapor deposition layer was also lowered. Therefore, the idea that the gas flow should be kept to the minimum necessary was established. However, in the study by the present inventors, by suppressing the gas flow in this way, the diffusion transfer of the reaction gas to the base material interface and the separation of the reaction by-product from the interface surface layer are not smoothly performed, and therefore, It has been found that the processing requires a long time, and further, the gas flow is suppressed, so that the reaction gas concentration in the CVD processing furnace is distributed, and as a result, the deposition film thickness becomes nonuniform.
そして、このような事実に基づきさらに検討を加えた結
果、CVD処理炉において吹付ノズルにより雰囲気ガス
を被処理材に吹付けることによりSiCl4の鋼帯表面
への拡散及び反応生成物たるFeCl2の鋼帯表面から
の放散を著しく促進し、高い蒸着速度でしかも蒸着膜の
不均一化を抑えつつCVD処理できることが判った。As a result of further study based on such facts, by spraying an atmosphere gas onto a material to be processed by a spray nozzle in a CVD processing furnace, diffusion of SiCl 4 to the surface of the steel strip and reaction product FeCl 2 of It was found that the CVD process can be carried out at a high vapor deposition rate while suppressing the non-uniformity of the vapor deposited film by significantly promoting the emission from the surface of the steel strip.
一般にCVD反応と呼ばれているものの多くは、気相中
でのガスの反応によって生成(析出)したものが基板面
に付着するものであり、この反応の場合の副生成物(反
応生成ガス)は気相中で生じ、固体側から発生するもの
ではない。これに対して鋼帯の滲珪処理では、Feと反
応ガス中のSiとが鋼帯表面で置換することで、Siが
鋼中に取り込まれる。これは置換型CVD反応と呼ばれ
るもので、鋼帯表面すなわち固体側からFeCl2が気
体(反応生成ガス)として発生する。したがって、この
ような置換型CVD反応を伴う処理では、反応生成ガス
が固体側から生じるという点で、一般に知られたCVD
反応とは異なる反応生成ガスの生成挙動を示す。Most of what is generally called a CVD reaction is that which is produced (deposited) by the reaction of gas in the gas phase and adheres to the substrate surface. By-products (reaction product gas) in the case of this reaction Occurs in the gas phase and is not generated from the solid side. On the other hand, in the siliconizing treatment of the steel strip, Fe is replaced with Si in the reaction gas on the surface of the steel strip, so that Si is taken into the steel. This is called a substitutional CVD reaction, and FeCl 2 is generated as a gas (reaction product gas) from the surface of the steel strip, that is, the solid side. Therefore, in a process involving such a substitutional CVD reaction, the reaction product gas is generated from the solid side, which is a generally known CVD method.
The behavior of the reaction product gas different from the reaction is shown.
そして、このような置換型CVD反応では、反応ガスを
含む雰囲気ガスを鋼帯表面に次々に供給し、且つ反応生
成ガス(FeCl2等)を反応界面から速やかに離脱さ
せることが反応を促進させる上で極めて重要である。In such a substitutional CVD reaction, the reaction is promoted by supplying atmospheric gas containing the reaction gas to the surface of the steel strip one after another, and quickly desorbing the reaction product gas (FeCl 2 or the like) from the reaction interface. Extremely important above.
この意味で、鋼帯面に吹付ノズルによって雰囲気ガスを
吹き付けることは、反応界面への反応ガスの供給と反応
生成ガスの反応界面からの離脱を促進することができる
という大きな利点がある。In this sense, spraying the atmospheric gas onto the steel strip surface with a spray nozzle has a great advantage that the supply of the reaction gas to the reaction interface and the separation of the reaction product gas from the reaction interface can be promoted.
第5図はこのノズル吹付方式による実施状況を示すもの
で、CVD処理炉2内に鋼帯Sに面して吹付ノズル5が
配置され、鋼帯表面にSiCl4を含む雰囲気ガスが吹
き付けられる。第6図(イ)及び(ロ)は、吹付ノズルによる
吹付状況を示すもので、同図(イ)に示すように鋼帯面に
対して直角方向から、或いは(ロ)に示すように斜め方向
からガスを吹付けることができる。FIG. 5 shows an implementation situation by this nozzle spraying method. A spraying nozzle 5 is arranged in the CVD processing furnace 2 so as to face the steel strip S, and an atmosphere gas containing SiCl 4 is sprayed on the surface of the steel strip. 6 (a) and 6 (b) show the spraying condition by the spraying nozzle, as shown in FIG. 6 (a), from the direction perpendicular to the steel strip surface, or obliquely as shown in (b). Gas can be sprayed from the direction.
このようなノズル吹付による単位時間当りのSi富化割
合は、ガスの鋼帯表面に対する衝突流速の増大に比例し
て大きくなるが、流速を過剰に大きくしても界面におけ
る反応律速となるためそれ以上のSi富化効果は期待で
きない。一般的には、5Nm/sec以下の流速で十分
な効果がられる。The Si enrichment rate per unit time due to such nozzle spraying increases in proportion to the increase in the collision flow velocity of the gas with respect to the steel strip surface, but even if the flow velocity is excessively increased, the reaction rate is limited at the interface. The above Si enrichment effect cannot be expected. Generally, a sufficient effect is obtained at a flow velocity of 5 Nm / sec or less.
以上のようにしてCVD処理された鋼帯Sは、引き続き
拡散炉3に導かれ SiCl 4 を含まない無酸化性ガス雰囲
気中で拡散処理される。すなわち、CVD処理直後で
は、鋼帯表面近くは中心部に較べ、Si濃度が極めて高
く、鋼帯を均熱することによって表面に過濃状態にある
Siを鋼帯内部に拡散させる処理をする。しかし、本発明
では、この拡散熱処理によりSiを鋼帯内に均一に分散さ
せるようなことはせず、表層Si濃度が鋼帯厚み方向中心
部のSi濃度よりも高い状態にあるうちに拡散処理を打ち
切り、Si濃度が厚み方向で不均一な鋼帯とするものであ
る。The steel strip S subjected to the CVD process as described above is continuously guided to the diffusion furnace 3 and subjected to the diffusion process in the non-oxidizing gas atmosphere containing no SiCl 4 . That is, immediately after the CVD treatment, the Si concentration near the surface of the steel strip is much higher than that in the central portion, and the surface of the steel strip is over-concentrated by soaking the steel strip.
A process of diffusing Si inside the steel strip is performed. However, in the present invention, the diffusion heat treatment does not uniformly disperse Si in the steel strip, and the diffusion treatment is performed while the surface layer Si concentration is higher than the Si concentration in the steel strip thickness direction central portion. Is cut off to form a steel strip having a non-uniform Si concentration in the thickness direction.
本発明者等が拡散処理時間を短縮化するという観点から
CVD処理鋼材のSi濃度分布と磁気特性との関係等につ
いて検討を加えた結果、高珪素鋼材の磁気特性は鋼材表
層部の結晶粒径とSi濃度に大きく支配され、表層部を所
定の粒度とSi濃度に調整することにより、Si濃度を板厚
方向で均一としなくとも十分な磁気特性が得られること
を見い出した。そして、このような傾向は特に高周波磁
気特性において顕著であることも判った。The inventors of the present invention have studied the relationship between the Si concentration distribution and the magnetic characteristics of the CVD-treated steel from the viewpoint of shortening the diffusion processing time. As a result, the magnetic characteristics of the high-silicon steel are found to be the grain size of the steel surface layer. It was found that sufficient magnetic properties can be obtained even if the Si concentration is not uniform in the plate thickness direction by adjusting the surface layer portion to a predetermined grain size and Si concentration, which is largely controlled by the Si concentration. It was also found that such a tendency is remarkable especially in high frequency magnetic characteristics.
このため本発明では、CVD処理に続く拡散処理を、表
層Si濃度が鋼帯厚み方向中心部のSi濃度よりも高い状態
にあるうちに打ち切り、Si濃度が厚み方向で不均一な鋼
帯を得るようにしたものである。Therefore, in the present invention, the diffusion treatment subsequent to the CVD treatment is terminated while the surface layer Si concentration is higher than the Si concentration in the central portion in the thickness direction of the steel strip, and a steel strip having a non-uniform Si concentration in the thickness direction is obtained. It was done like this.
このような方法によれば短時間の拡散熱処理により磁気
特性が十分確保された鋼帯を得ることができる。加え
て、このようにして得られた鋼帯は、厚みの中心部が低
Si濃度に維持されているため、靭性が確保され、その破
断も適切に防止することができる。According to such a method, it is possible to obtain a steel strip having sufficiently secured magnetic characteristics by a diffusion heat treatment for a short time. In addition, the steel strip thus obtained has a low
Since the Si concentration is maintained, the toughness is secured and the fracture can be appropriately prevented.
第4図は本発明法における鋼帯板厚方向のSi濃度分布の
変化を示すものであり、3%Si添加鋼の鋼帯を母材と
し、これをCVD処理−拡散処理した場合を示してい
る。(A) はCVD処理直後の状態を示しており、鋼帯表
面にはFe3 Si相当(Si:14.5%)のSiが蒸着している。
本発明ではこのような鋼帯を(B) 状態まで拡散熱処理
し、板厚方向でSi濃度が不均一な鋼帯で得る。(B) に示
す例では表層のSi濃度が 6.5%になるまで拡散熱処理が
施されたものであり、板厚中心部はほぼ母材Si濃度たる
3%に維持されている。FIG. 4 shows changes in the Si concentration distribution in the thickness direction of the steel strip in the method of the present invention, showing a case where a steel strip of 3% Si-added steel is used as a base material and this is subjected to CVD treatment-diffusion treatment. There is. (A) shows the state immediately after the CVD treatment, and Si equivalent to Fe 3 Si (Si: 14.5%) is deposited on the surface of the steel strip.
In the present invention, such a steel strip is subjected to diffusion heat treatment to the (B) state to obtain a steel strip having a non-uniform Si concentration in the plate thickness direction. In the example shown in (B), the diffusion heat treatment is performed until the Si concentration of the surface layer reaches 6.5%, and the central portion of the plate thickness is maintained at 3% which is the base material Si concentration.
このようにして得られる鋼帯は、拡散熱処理温度と処理
時間を選択して表層部を適切な粒径とSi濃度に調整する
ことにより、優れた磁気特性、特に高周波磁気特性を確
保することができる。The steel strip thus obtained can secure excellent magnetic properties, especially high-frequency magnetic properties by selecting the diffusion heat treatment temperature and treatment time and adjusting the surface layer portion to an appropriate grain size and Si concentration. it can.
この拡散処理は、鋼帯表面を酸化させない為に、無酸化
雰囲気中で行う必要が有り、また高温で行うほど処理時
間が少なくて済む。This diffusion treatment needs to be performed in a non-oxidizing atmosphere so as not to oxidize the surface of the steel strip, and the treatment time is shorter as it is performed at a higher temperature.
拡散処理は、一定温度で行ってもよいが、第3図のFe−
Si状態図から判るように、拡散の進行とともに鋼帯表層
部のSi濃度が減少しその融点が上がることから、拡散の
進行に伴い鋼帯を溶解させない程度に徐々に昇温させる
(例えば複数段階で昇温させる)ことにより、処理を短
時間で行うことができる。The diffusion treatment may be performed at a constant temperature, but Fe- in FIG.
As can be seen from the Si phase diagram, as the diffusion progresses, the Si concentration in the surface layer of the steel strip decreases and its melting point rises. By raising the temperature in step 1), the treatment can be performed in a short time.
このような拡散処理後、鋼帯Sは冷却炉4で冷却され、
しかる後捲取られるが、本発明では、この冷却過程の一
部において鋼帯Sを磁場中冷却する。After such diffusion treatment, the steel strip S is cooled in the cooling furnace 4,
Then, the steel strip S is wound up in a magnetic field in a part of this cooling process.
珪素鋼板は磁場中冷却を行うことによりその磁気特性が
著しく向上することが知られており、本発明では冷却過
程の一部において鋼帯Sを磁場中に通板し、磁場中冷却
を実施する。It is known that the magnetic properties of a silicon steel sheet are remarkably improved by cooling it in a magnetic field. In the present invention, the steel strip S is passed through a magnetic field in a part of the cooling process to perform cooling in a magnetic field. .
鋼帯Sはキューリー点以下の温度において磁気の影響を
受け、磁場中冷却はこのキューリー点以下の温度で実質
的な効果を発揮する。特に、磁場中冷却を鋼帯温度がA
2 変態点を通過する際に行うことにより著しく磁気特性
が向上する。第11図は珪素鋼板の板温と磁場中冷却効果
との関係を示すもので、例えば 6.5wt%Si鋼帯の場合、
温度t1 がキューリー点、温度t2 がA2 変態点であ
り、磁場中冷却は通常温度t1 より高目の温度TS (例
えば 750℃)から開始され、温度t2 を通過して温度T
F で終了する。The steel strip S is affected by magnetism at a temperature below the Curie point, and cooling in a magnetic field exerts a substantial effect at a temperature below the Curie point. In particular, the steel strip temperature is A when cooling in a magnetic field.
The magnetic properties are remarkably improved by performing the process when passing through the two transformation points. FIG. 11 shows the relationship between the plate temperature of a silicon steel plate and the cooling effect in a magnetic field. For example, in the case of 6.5 wt% Si steel strip,
The temperature t 1 is the Curie point, the temperature t 2 is the A 2 transformation point, the cooling in the magnetic field is started from the temperature T S higher than the normal temperature t 1 (for example, 750 ° C.), and passes the temperature t 2 to reach the temperature. T
End with F.
第12図ないし第14図は磁場中冷却設備の一構成例を示す
もので、冷却炉に設けられる磁場印加用コイル8を中空
の銅管9により構成し、この銅管9内に冷却媒体10を通
すことにより、磁場印加用コイル8内を通板する鋼帯S
に磁場を印加しつつ、コイル内側面から放射冷却を行う
ようにしている。なお、前記銅管9への外面には絶縁皮
膜11(SiO2 等)が形成される。FIGS. 12 to 14 show an example of the configuration of a cooling facility in a magnetic field. The magnetic field applying coil 8 provided in the cooling furnace is composed of a hollow copper tube 9, and the cooling medium 10 is placed in the copper tube 9. The steel strip S which is passed through the coil 8 for applying a magnetic field by passing
Radiation cooling is performed from the inside surface of the coil while applying a magnetic field to the coil. An insulating film 11 (such as SiO 2 ) is formed on the outer surface of the copper tube 9.
前記冷却媒体としては、水を用いることもできるが、電
気的な問題がある場合、例えば絶縁性の大きいフッ素不
活性液体を使用することもできる。As the cooling medium, water may be used, but if there is an electrical problem, for example, a fluorine-inert liquid having a large insulating property may be used.
第15図は他の構成例を示すもので、磁場印加用コイル8
の鋼帯出側位置に冷却ガスをコイル内部に供給するため
のノズル12を設け、さらに、磁場印加用コイル8の上部
及び下部に冷却ガス導入ダクト15及びフード14を設け、
ファン13により冷却ガスをコイル外側に供給するよう構
成したものである。FIG. 15 shows another configuration example, in which the magnetic field applying coil 8 is used.
Nozzle 12 for supplying cooling gas to the inside of the coil is provided at the steel strip exit side position, and further, cooling gas introduction duct 15 and hood 14 are provided above and below the magnetic field applying coil 8,
The cooling gas is supplied to the outside of the coil by the fan 13.
第16図は、第12図ないし第14図に示す方式の装置におい
て、磁場印加用コイル8の間隔(銅管の間隔)を鋼帯S
の入側から出側にかけて順次或いは段階的に密にするこ
とにより均一な冷却と磁場冷却効果の向上を図るように
したものである。すなわち、冷却体たるコイルが密であ
るほど鋼帯の冷却が大きく、このためこのようなコイル
内で鋼帯Sを通板させることにより、同図に示すように
鋼帯Sを一定速度で冷却することが可能であり、これに
よって板厚方向に均一な冷却を行うことができ、この結
果変態をスムーズに移行させ優れた磁気特性が得られ
る。また、コイルが密であるほど鋼帯に強磁場をかける
ことができるが、上述したように、鋼帯はキューリー点
以下の低温域、特にA2 変態点で磁場の影響を強く受け
るものであり、このため低温側でコイルを密にし、少な
くとも上記A2 変態点通過時に強磁場をかけることによ
り大きな磁場中冷却効果を得ることができる。FIG. 16 shows that in the apparatus of the system shown in FIGS. 12 to 14, the distance between the magnetic field applying coils 8 (the distance between the copper pipes) is the steel strip S.
It is intended to achieve uniform cooling and improvement of the magnetic field cooling effect by sequentially or stepwise increasing the density from the inlet side to the outlet side. That is, the denser the coil as the cooling body, the greater the cooling of the steel strip. Therefore, by passing the steel strip S through such a coil, the steel strip S is cooled at a constant speed as shown in FIG. It is possible to achieve uniform cooling in the plate thickness direction, and as a result, the transformation can be smoothly transferred and excellent magnetic characteristics can be obtained. Further, the denser the coil is, the stronger the magnetic field can be applied to the steel strip. However, as described above, the steel strip is strongly affected by the magnetic field in the low temperature region below the Curie point, particularly at the A 2 transformation point. Therefore, a large cooling effect in a magnetic field can be obtained by making the coil dense on the low temperature side and applying a strong magnetic field at least when passing through the A 2 transformation point.
なお、場合によっては、上記とは逆に磁場印加用コイル
8の間隔を鋼帯Sの入側で密にし、出側に向って順次疎
にするような構造を採ることもできる。このような構造
では、鋼帯の急冷が可能であり、また少なくとも鋼帯が
A2 変態点を通過するまでコイルを比較的密なものとし
ておくことにより、大きな磁場中冷却効果も確保するこ
とができる。In some cases, conversely to the above, a structure may be adopted in which the magnetic field applying coils 8 are closely spaced on the entrance side of the steel strip S and are gradually sparse toward the exit side. With such a structure, the steel strip can be rapidly cooled, and a large magnetic field cooling effect can be secured by keeping the coil relatively dense at least until the steel strip passes the A 2 transformation point. it can.
鋼帯Sは以上のようにして冷却され、コイルに捲取られ
る。この場合、一般にSi含有量が多く(例えば 4.0%以
上)、板厚が比較的厚い鋼帯は温間で捲取ることが好ま
しい。The steel strip S is cooled as described above and wound on the coil. In this case, it is generally preferable that a steel strip having a high Si content (for example, 4.0% or more) and a relatively thick plate is wound in a warm state.
また本発明では、上記拡散処理−冷却後、鋼帯に連続的
に絶縁皮膜コーティングを施し、焼付処理後捲取るよう
にすることができる。第2図はこのための連続処理ライ
ンを示すもので、6はコーティング装置、7は焼付炉で
ある。Further, in the present invention, after the diffusion treatment-cooling, the steel strip may be continuously coated with an insulating film, and may be wound after the baking treatment. FIG. 2 shows a continuous processing line for this purpose, in which 6 is a coating apparatus and 7 is a baking furnace.
電磁鋼板は通常積層状態で使用され、この場合積層され
る各鋼板はそれぞれ絶縁される必要がある。このため電
磁鋼板には絶縁皮膜コーティングが施される。Si含有量
が 4.0%以上の鋼帯は、常温状態では脆性材料であり、
ほとんど塑性変形しない。このため絶縁皮膜コーティン
グをCVD処理ラインと別ラインで行った場合、コイル
の捲戻し、捲取り時に鋼帯が破断するおそれがある。そ
こで、本発明は拡散処理−冷却後、鋼帯Sにコーティン
グ装置6で絶縁塗料を塗布し、次いで塗装焼付炉7で焼
付処理する。Electromagnetic steel sheets are usually used in a laminated state, and in this case, each laminated steel sheet needs to be insulated. Therefore, the electrical steel sheet is coated with an insulating film. Steel strips with Si content of 4.0% or more are brittle materials at room temperature,
Almost no plastic deformation. Therefore, when the insulating film coating is performed on a line different from the CVD processing line, the steel strip may be broken during the coil rewinding and winding. Therefore, according to the present invention, after the diffusion treatment and cooling, the steel strip S is coated with an insulating coating material by the coating device 6, and then is baked in the coating baking furnace 7.
絶縁塗料としては、無機系、有機系の適宜なものを用い
ることができる。無機系塗料としては、例えばリン酸マ
グネシウム、無水クロム酸、シリカゾル等が、また有機
系塗料としてはプラスチック樹脂等が用いられる。塗料
はロールコータ方式、スプレー方式等により鋼帯Sに塗
布され、無機系塗料の場合には約 800℃程度、有機系塗
料の場合には 200〜300 ℃程度で焼付処理する。As the insulating coating material, an appropriate inorganic or organic coating material can be used. As the inorganic coating material, for example, magnesium phosphate, chromic anhydride, silica sol or the like is used, and as the organic coating material, a plastic resin or the like is used. The paint is applied to the steel strip S by a roll coater method, a spray method, etc., and is baked at about 800 ° C for inorganic paints and 200-300 ° C for organic paints.
以上のような絶縁皮膜コーティング−焼付処理を行う場
合、磁場中冷却を行う時期が問題となる。すなわち、コ
ーティング後の焼付処理では塗膜を700 ℃以上の高温で
焼付ける場合があり、このように高温焼付を行うと、仮
に前工程たるCVD処理−拡散処理後の冷却において磁
場中冷却を行ってもその効果が消失してしまう。In the case of performing the insulating film coating-baking process as described above, the timing of cooling in a magnetic field becomes a problem. That is, in the baking process after coating, the coating film may be baked at a high temperature of 700 ° C. or higher, and if such high temperature baking is performed, cooling in a magnetic field is performed in the cooling process after the CVD process-diffusion process which is the previous step. However, the effect disappears.
したがって絶縁皮膜コーティング−焼付処理を行う工程
では、磁場中冷却を塗装焼付温度等に応じ、拡散処理後
の冷却過程または焼付処理後の冷却過程で行うことがで
きる。磁場中冷却の効果が消失する再加熱温度は約 650
℃前後とされており、このため焼付処理温度が 650℃以
上の場合には焼付処理後の冷却過程で、また焼付処理温
度が 650℃未満の場合にはCVD処理−拡散処理後の冷
却過程でそれぞれ磁場中冷却を行うようにすることが好
ましい。Therefore, in the step of performing insulating film coating-baking treatment, cooling in a magnetic field can be performed in the cooling process after the diffusion treatment or the cooling process after the baking treatment, depending on the coating baking temperature and the like. The reheating temperature at which the effect of cooling in a magnetic field disappears is about 650.
It is said to be around ℃, so when the baking temperature is 650 ℃ or higher, it is in the cooling process after baking, and when the baking temperature is less than 650 ℃, it is in the cooling process after CVD treatment-diffusion treatment. It is preferable to perform cooling in each magnetic field.
一般に無機系塗料を焼付ける場合には、鋼帯を 800℃程
度まで加熱し、したがってこの場合には、コーティング
前に磁場中冷却しても意味がなく、焼付処理後の冷却過
程で磁場中冷却することが好ましい。また有機系塗料の
場合には 200〜300 ℃程度の焼付温度で済み、この場合
にはCVD処理−拡散処理後の冷却過程で磁場中冷却を
実施することができる。Generally, when baking an inorganic paint, the steel strip is heated to about 800 ° C. Therefore, cooling in a magnetic field before coating is meaningless in this case, and cooling in a magnetic field is performed in the cooling process after baking. Preferably. Further, in the case of an organic paint, a baking temperature of about 200 to 300 ° C. is sufficient, and in this case, cooling in a magnetic field can be carried out in the cooling process after the CVD treatment-diffusion treatment.
なお、磁場中冷却は、場合によってはCVD処理−拡散
処理後の冷却過程とコーティング−焼付処理後の冷却過
程の両方で行うことができる。The cooling in the magnetic field can be performed in both the cooling process after the CVD process-diffusion process and the cooling process after the coating-baking process, depending on the case.
前記加熱炉1では無酸化加熱が行われるものであり、こ
のため電気間接加熱、誘導加熱、ラジアントチューブ間
接加熱、直火還元加熱等の加熱方式を単独または適当に
組み合せた加熱方法が採られる。なお、間接加熱方式を
採る場合、加熱に先立ち電気洗浄等の前処理が行われ
る。前処理を含めた加熱方式として例えば次のようなも
のを採用できる 前処理−〔予熱〕−電気間接加熱(または誘導加
熱) 前処理−〔予熱〕−ラジアントチューブ加熱−電気
間接加熱(または誘導加熱) 〔予熱〕−直火還元加熱−電気間接加熱(または誘
導加熱) 前処理−〔予熱〕−ラジアントチューブ間接加熱
(セラミックラジアントチユーブ方式) 〔予熱〕−直火還元加熱 また、冷却炉4での冷却方式に特に限定はなくガスジェ
ット冷却、ミスト冷却、放射冷却等の各種冷却方式を単
独または組合せた形で採用することができる。Oxidation-free heating is performed in the heating furnace 1. Therefore, heating methods such as electric indirect heating, induction heating, radiant tube indirect heating, and direct-fire reduction heating may be used individually or in an appropriate combination. When the indirect heating method is adopted, pretreatment such as electric cleaning is performed before heating. As a heating method including pretreatment, for example, the following can be adopted: pretreatment- [preheating] -electric indirect heating (or induction heating) pretreatment- [preheating] -radiant tube heating-electric indirect heating (or induction heating) ) [Preheat] -Direct heating / reduction heating-Electrical indirect heating (or induction heating) Pretreatment- [Preheating] -Radiant tube indirect heating (ceramic radiant tube method) [Preheating] -Direct heating / reduction heating The cooling method is not particularly limited, and various cooling methods such as gas jet cooling, mist cooling, and radiation cooling can be used alone or in combination.
本発明は、 6.5%Si鋼帯のような珪素含有量が極めて高
い鋼帯の製造に好適なものであることは以上述べた通り
であるが、従来、圧延法で製造する場合に変形が多く歩
留りが悪かったSi:2〜4%程度の高珪素鋼帯も容易に
製造できる利点がある。As described above, the present invention is suitable for the production of steel strips having a very high silicon content such as 6.5% Si steel strip. However, there are many deformations when conventionally produced by the rolling method. There is an advantage that a high-silicon steel strip having a low yield of Si: about 2 to 4% can be easily manufactured.
[実施例] ○ 実施例−1 小型のCVD処理炉を用い、CVD処理性に対する SiC
l 4 濃度及びCVD処理温度の影響を調べた。その結果
を第7図及び第8図に示す。[Example] ○ Example-1 Using a small-sized CVD processing furnace, SiC with respect to CVD processability
l 4 was investigated the effect of concentration and CVD processing temperatures. The results are shown in FIGS. 7 and 8.
図中、Aが雰囲気法、すなわちノズル吹付を行わないで
CVD処理した場合、またBがノズル吹付法、すなわち
第5図に示すように雰囲気ガスを鋼帯面に 0.5m/Sの
流速で吹き付けつつCVD処理した場合を示す。なお、
Si富化割合とは、母材当初のSi量に対するCVD処理後
のSi量増加分を示す。In the figure, A is the atmosphere method, that is, the CVD process is performed without nozzle spraying, and B is the nozzle spraying method, that is, the atmosphere gas is sprayed onto the steel strip surface at a flow rate of 0.5 m / S as shown in FIG. A case where the CVD process is performed while being shown. In addition,
The Si enrichment ratio refers to the amount of increase in the amount of Si after the CVD process with respect to the amount of Si in the initial of the base material.
これによれば、 SiCl 4 濃度5%以上、CVD処理温度
1023℃以上において大きなSi富化効果が得られている。
また同じ条件でも、吹付ノズルにより雰囲気ガスを吹付
ける方法の場合、単に雰囲気中で鋼帯を通板せしめる場
合に較べ格段に優れたSi富化効果(CVD処理性)が得
られていることが判る。According to this, the SiCl 4 concentration is 5% or more, the CVD processing temperature
A large Si enrichment effect is obtained above 1023 ° C.
Even under the same conditions, the method of spraying the atmospheric gas with the spray nozzle can obtain a significantly superior Si enrichment effect (CVD processability) as compared with the case of simply passing the steel strip in the atmosphere. I understand.
第9図は同様のCVD処理炉を用い、雰囲気法Aとノズ
ル吹付法Bの蒸着時間と鋼帯中Si濃度(母材Si量+蒸着
Si量)との関係を、Si:3%、板厚 0.5mmの鋼帯を SiC
l 4 濃度21%、処理温度1150℃でCVD処理した場合に
ついて調べたものである。なお、ノズル吹付法では、ス
リットノズルにより鋼帯に対し垂直方向から 0.2Nm/
sec の流速で雰囲気ガスを吹付けた。同図から判るよう
に、 6.5%Si鋼相当のSi蒸着量を得るために雰囲気法A
では7分かかるのに対し、ノズル吹付法Bでは 1.5分で
処理することができた。FIG. 9 shows the same CVD process furnace using the atmosphere method A and the nozzle spraying method B for the deposition time and the Si concentration in the steel strip (the amount of the base material Si + the deposition).
The relationship with the amount of Si) is as follows: Si: 3%, steel strip 0.5 mm thick
l 4 concentration of 21% is obtained examined case of CVD at a treatment temperature of 1150 ° C.. In the nozzle spray method, 0.2 Nm /
Atmospheric gas was blown at a flow rate of sec. As can be seen from the figure, the atmosphere method A was used to obtain the Si deposition amount equivalent to 6.5% Si steel.
It took 7 minutes, whereas in the nozzle spraying method B, it could be processed in 1.5 minutes.
第10図はノズル吹付法における衝突ガス流速と鋼帯のSi
富化割合(第7図及び第8図と同様)との関係を示すも
のであり、所定レベルまでは衝突ガス流速に比例して鋼
帯のSi富化割合が増大している。Figure 10 shows the collision gas velocity and Si of steel strip in the nozzle spraying method.
It shows the relationship with the enrichment ratio (similar to FIGS. 7 and 8), and the Si enrichment ratio of the steel strip increases in proportion to the collision gas flow velocity up to a predetermined level.
○ 実施例−2 第1図に示す連続プロセスにより、それぞれ同量のSi蒸
着量で拡散処理時間を変えた鋼帯を製造し、これらの鋼
帯のSi拡散の度合い及び磁気特性を調べた。○ Example-2 By the continuous process shown in Fig. 1, steel strips having different diffusion treatment times with the same amount of Si vapor deposition were produced, and the degree of Si diffusion and magnetic properties of these steel strips were investigated.
具体的には、板厚 0.35 mm、板幅 900mmのSi3%含
有鋼帯を素材とし、ラインスピードを5〜50mpm の範囲
で変化させることにより拡散炉の通過時間を変え、CV
D処理(CVD処理温度1050〜1150℃)−拡散処理を行
った。なお、ラインスピードの違いによってSi蒸着量が
変化しないようにするため、ラインスピードに応じCV
D雰囲気ガス中の SiCl 4 濃度(10〜30%)、及びガス
吹付ノズルからの雰囲気ガス吹付量を変え、Siの蒸着量
がラインスピードに関係なく一定となるよう調整した。
本実施例では、母材を含めた平均Si濃度が 6.5wt%とな
るような蒸着量でSiを蒸着させ、また一連の処理は第18
図に示す熱サイクルで行った。なお、拡散処理時間が短
い鋼帯については、表層部のSi量が非常に多いことか
ら、表層のヒビ割れを防止するため温間(250〜 300℃)
で捲取った。Specifically, using a steel strip with a plate thickness of 0.35 mm and a plate width of 900 mm and containing 3% Si, the line time is changed within the range of 5 to 50 mpm to change the passage time of the diffusion furnace, and the CV
D treatment (CVD treatment temperature 1050-1150 ° C.)-Diffusion treatment. In addition, in order to prevent the amount of Si vapor deposition from changing due to the difference in line speed, CV should be adjusted according to the line speed.
D The SiCl 4 concentration in the atmosphere gas (10 to 30%) and the amount of atmosphere gas sprayed from the gas spray nozzle were changed so that the amount of Si deposited was constant regardless of the line speed.
In this example, Si was deposited in such an amount that the average Si concentration including the base material was 6.5 wt%, and the series of treatments was performed in the 18th step.
The thermal cycle shown in the figure was used. For steel strips with a short diffusion treatment time, since the amount of Si in the surface layer is very large, a warm (250 to 300 ° C) temperature was used to prevent cracking of the surface layer.
I wound up with.
第19図はCVD処理ままの鋼帯、及び拡散時間が各5
分、10分、20分、40分の上記鋼帯について、板厚方向断
面のSi濃度およびFe濃度をXMAにより測定したもの
で、約40分の拡散処理(1200℃)で、ほぼ均一にSiが拡
散されている。Fig. 19 shows the steel strip as it is CVD processed and the diffusion time is 5 each
Min., 10 min., 20 min., 40 min. Of the above steel strip, the Si concentration and the Fe concentration in the cross section in the plate thickness direction were measured by XMA. Has been diffused.
第20図は上記と同様条件により拡散時間を変えて得られ
たサイクルについて、磁気特性たる鉄損を測定した結果
を示すもので、拡散処理時間10分程度、すなわち第19図
(C) 程度のSi拡散状態でSiを均一拡散させた場合とぼぼ
同等の十分に高い磁気特性が得られていることが判る。Figure 20 shows the results of measuring the iron loss, which is the magnetic property, for cycles obtained by changing the diffusion time under the same conditions as above, and the diffusion treatment time was about 10 minutes, that is, Figure 19
It can be seen that sufficiently high magnetic characteristics are obtained, which is almost equivalent to the case where Si is uniformly diffused in the Si diffusion state of about (C).
○ 実施例−3 実施例−2と同様の素材鋼帯について、連続プロセスに
より各種 SiCl 4 濃度の雰囲気でCVD処理をし、引き
続き1200℃×10分の拡散均熱処理を施し、ボイドの残存
度合いを調べた。その結果を第1表に示す。○ Example-3 The same material steel strip as in Example-2 was subjected to a CVD process in an atmosphere of various SiCl 4 concentrations by a continuous process, and subsequently subjected to a diffusion soaking treatment at 1200 ° C for 10 minutes to determine the degree of voids remaining. Examined. The results are shown in Table 1.
このように SiCl 4 30%、35%ではボイドの残存が認め
られた。そこで、 SiCl 4 濃度30%、35%について、処
理温度を A) 1200℃一定×10分 B) 1200℃×5分→1250℃×5分 C) 1200℃×3分→1250℃×3分→ 1280℃×4分 の3水準に設定した鋼帯を製造し、それらのボイド残存
を調査した。その結果を第2表に示す。 Thus, residual voids were observed in SiCl 4 30% and 35%. Therefore, for SiCl 4 concentrations of 30% and 35%, the treatment temperature is A) 1200 ° C constant × 10 minutes B) 1200 ° C × 5 minutes → 1250 ° C × 5 minutes C) 1200 ° C × 3 minutes → 1250 ° C × 3 minutes → Steel strips set at three levels of 1280 ° C x 4 minutes were manufactured, and their residual voids were investigated. The results are shown in Table 2.
このように拡散処理条件を選択することにより SiCl 4
35%でもある程度満足し得る製品が得られる。但し、実
際には、若干の温度制御によりボイドを消滅させること
ができる SiCl 4 濃度30%以下が好ましい。 By selecting the diffusion treatment conditions in this way, SiCl 4
Even with 35%, a product that is satisfied to some extent can be obtained. However, in practice, it is preferable that the SiCl 4 concentration is 30% or less so that the voids can be eliminated by a slight temperature control.
○ 実施例−4 CVD処理−拡散処理後の鋼帯をその冷却過程で磁場中
冷却し、その磁気特性を調べた。○ Example-4 The steel strip after the CVD treatment-diffusion treatment was cooled in a magnetic field in the cooling process, and its magnetic characteristics were investigated.
第17図はその結果を示すもので、図中が磁場冷却をか
けない場合、,が本発明材であり、このうち、が
均等ピッチで巻き付けたコイルにより30Oe の磁場をか
けた場合、が第16図に示す装置により同図に示すよう
に段階的に磁場を強くして磁場中冷却した場合をそれぞ
れ示している。また′,′は比較材で、蒸着Siを鋼
帯内に均一拡散させたものであり、このうち′がと
同様の、また′がと同様の磁場中冷却を施したもの
である。同図から明らなかように、本発明材ではSiを均
一拡散させた比較材と劣らない磁気特性が得られてい
る。また特にA2 変態点通過前後に強磁場がかかるよう
にした第16図の方式で磁場中冷却を実施することによ
り、極めて優れた磁気特性が得られていることが判る。FIG. 17 shows the results. In the figure, when the magnetic field cooling is not applied, is the material of the present invention, of which, when a magnetic field of 30 Oe is applied by the coil wound at a uniform pitch, The apparatus shown in FIG. 16 shows the case where the magnetic field is gradually strengthened and cooled in the magnetic field as shown in FIG. Further, 'and' are comparative materials, in which vapor-deposited Si is uniformly diffused in the steel strip, of which, 'is the same as and the same is the same as that in the magnetic field. As is clear from the figure, the magnetic material of the present invention has magnetic characteristics comparable to those of the comparative material in which Si is uniformly diffused. Further, it is found that particularly excellent magnetic characteristics are obtained by carrying out cooling in a magnetic field by the method of FIG. 16 in which a strong magnetic field is applied before and after passing through the A 2 transformation point.
[発明の効果] 以上述べた本発明によれば、連続ラインにおいて短時間
のCVD処理及び拡散熱処理により優れた磁気特性の高
珪素鋼帯を得ることができ、また1200℃以下の温度でC
VD処理を行うため鋼帯の形状不良やエッジ部溶解等の
問題を生じさせることがなく、加えて磁気特性を損うこ
となく鋼帯の靭性を向上させることができ、このような
ことからラインの長大化を招くことなく高品質、高磁気
特性の高珪素鋼板を能率的に製造することができる。[Effects of the Invention] According to the present invention described above, a high silicon steel strip having excellent magnetic properties can be obtained by a short-time CVD treatment and a diffusion heat treatment in a continuous line, and C at a temperature of 1200 ° C or lower.
Since the VD process is performed, problems such as defective shape of the steel strip and melting of the edge portion do not occur, and in addition, the toughness of the steel strip can be improved without impairing the magnetic properties. It is possible to efficiently manufacture a high-quality silicon steel sheet having high quality and high magnetic properties without increasing the length of the steel sheet.
第1図及び第2図はそれぞれ本発明法を実施するための
連続処理ラインを示す説明図である。第3図はFe−Si系
状態図である。第4図(A) ,(B) は本発明の拡散熱処理
における鋼帯板厚方向のSi濃度分布の変化を示すもので
ある。第5図及び第6図(イ),(ロ)はノズル吹付方式によ
るCVD処理状況を示すもので、第5図は全体説明図、
第6図(イ)及び(ロ)はそれぞれノズル吹付方法を示す説明
図である。第7図はCVD処理におけるガス中 SiCl 4
濃度と鋼帯Si富化割合との関係、第8図はCVD処理温
度と鋼帯Si富化割合との関係をそれぞれ示すものであ
る。第9図は本発明におけるSi蒸着時間と鋼帯中Si濃度
との関係を、雰囲気法及びノズル吹付法で比較して示し
たものである。第10図はノズル吹付法によるCVD処理
において、雰囲気ガスの鋼帯に対する衝突ガス流速と鋼
帯Si富化割合との関係を示すものである。第11図は珪素
鋼板の板温と磁場中冷却効果との関係を示すものであ
る。第12図ないし第14図は磁場中冷却設備の一構成例を
示すもので、第12図は斜視図、第13図はコイルの断面
図、第14図はコイルを構成する銅管の断面図である。第
15図は磁場中冷却設備の他の構成例を示す説明図であ
る。第16図は磁場中冷却の好ましい設備及びこれによる
磁場中冷却方法を示す説明図である。第17図は磁場冷却
した場合の磁気特性を、単純冷却の場合と比較して示す
ものである。第18図は実施例で採った熱サイクルを示す
ものである。第19図(a) 〜(e) は実施例における各供試
材のSi濃度分布を示すものである。第20図は実施例にお
ける各供試材の磁気特性を示すものである。 図において、1は加熱炉、2はCVD処理炉、3は拡散
処理炉、4は冷却炉、6はコーティング装置、7は焼付
炉、Sは鋼帯である。1 and 2 are explanatory views showing continuous processing lines for carrying out the method of the present invention. FIG. 3 is an Fe-Si system phase diagram. FIGS. 4 (A) and 4 (B) show changes in the Si concentration distribution in the thickness direction of the steel strip during the diffusion heat treatment of the present invention. FIGS. 5 and 6 (a) and (b) show the state of the CVD process by the nozzle spraying method. FIG. 5 is an overall explanatory diagram,
6 (a) and 6 (b) are explanatory views showing the nozzle spraying method. Figure 7 shows SiCl 4 in gas during CVD processing.
FIG. 8 shows the relationship between the concentration and the Si enrichment ratio in the steel strip, and FIG. 8 shows the relationship between the CVD treatment temperature and the Si enrichment ratio in the steel strip. FIG. 9 shows the relationship between the Si deposition time and the Si concentration in the steel strip in the present invention by comparing the atmosphere method and the nozzle spraying method. FIG. 10 shows the relationship between the collision gas flow velocity of the atmospheric gas with respect to the steel strip and the Si enrichment ratio of the steel strip in the CVD process by the nozzle spraying method. FIG. 11 shows the relationship between the plate temperature of a silicon steel plate and the cooling effect in a magnetic field. 12 to 14 show an example of the configuration of a cooling facility in a magnetic field, FIG. 12 is a perspective view, FIG. 13 is a sectional view of a coil, and FIG. 14 is a sectional view of a copper tube constituting the coil. Is. First
FIG. 15 is an explanatory diagram showing another configuration example of the magnetic field cooling equipment. FIG. 16 is an explanatory view showing a preferable facility for cooling in a magnetic field and a method for cooling in a magnetic field by the facility. FIG. 17 shows the magnetic characteristics in the case of magnetic field cooling in comparison with the case of simple cooling. FIG. 18 shows the thermal cycle taken in the example. FIGS. 19 (a) to 19 (e) show the Si concentration distribution of each test material in Examples. FIG. 20 shows the magnetic characteristics of each test material in the examples. In the figure, 1 is a heating furnace, 2 is a CVD processing furnace, 3 is a diffusion processing furnace, 4 is a cooling furnace, 6 is a coating apparatus, 7 is a baking furnace, and S is a steel strip.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 C23C 16/54 7325−4K (56)参考文献 特公 昭45−21181(JP,B1) 特公 昭47−25564(JP,B1) 特公 昭53−42019(JP,B2)─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI technical display location C23C 16/54 7325-4K (56) References JP-B-45-21181 (JP, B1) JP-B Sho 47-25564 (JP, B1) Japanese Patent Sho 53-42019 (JP, B2)
Claims (2)
板させつつ、SiCl4をmol分率で5〜35%含んだ無
酸化性ガスを吹付ノズルから鋼帯面に吹き付けて102
3〜1200℃の温度で連続的に滲珪処理し、次いで、
SiCl4を含まない無酸化性ガス雰囲気中でSiを鋼
帯内部に拡散させる拡散処理するに当り、該拡散処理
を、表層Si濃度が鋼帯厚み方向中心部のSi濃度より
も高い状態にあるうちに打ち切り、Si濃度が厚み方向
で不均一な鋼帯を得、続く冷却過程の一部において鋼帯
を磁場中冷却した後捲取ることを特徴とする連続ライン
における高珪素鋼帯の製造方法。1. A non-oxidizing gas containing SiCl 4 in a mole fraction of 5 to 35% is sprayed onto a steel strip surface from a spraying nozzle while continuously passing the steel strip in an non-oxidizing gas atmosphere. 102
Continuous silicidation at a temperature of 3 to 1200 ° C., then
In the diffusion treatment for diffusing Si into the steel strip in the non-oxidizing gas atmosphere containing no SiCl 4 , the diffusion treatment is performed such that the surface Si concentration is higher than the Si concentration in the central portion in the thickness direction of the steel strip. A method for producing a high-silicon steel strip in a continuous line, which is characterized in that the steel strip is cut off in the inside to obtain a steel strip having a non-uniform Si concentration in the thickness direction, and the steel strip is cooled in a magnetic field in a part of the subsequent cooling process and then wound. .
板させつつ、SiCl4をmol分率で5〜35%含んだ無
酸化性ガスを吹付ノズルから鋼帯面に吹き付けて102
3〜1200℃の温度で連続的に滲珪処理し、次いで、
SiCl4を含まない無酸化性ガス雰囲気中でSiを鋼
帯内部に拡散させる拡散処理するに当り、該拡散処理
を、表層Si濃度が鋼帯厚み方向中心部のSi濃度より
も高い状態にあるうちに打ち切り、Si濃度が厚み方向
で不均一な鋼帯を得、冷却後絶縁皮膜コーティングを施
して焼付処理し、冷却後捲取るようにし、前記拡散処理
後の冷却過程及び/または焼付処理後の冷却過程の一部
において鋼帯を磁場中冷却することを特徴とする連続ラ
インにおける高珪素鋼帯の製造方法。2. A steel strip is continuously passed in an atmosphere of non-oxidizing gas, and non-oxidizing gas containing SiCl 4 in a mole fraction of 5 to 35% is sprayed onto the surface of the steel strip from a spray nozzle. 102
Continuous silicidation at a temperature of 3 to 1200 ° C., then
In the diffusion treatment for diffusing Si into the steel strip in the non-oxidizing gas atmosphere containing no SiCl 4 , the diffusion treatment is performed such that the surface Si concentration is higher than the Si concentration in the central portion in the thickness direction of the steel strip. The steel strip is cut out and the Si concentration is non-uniform in the thickness direction. After cooling, an insulating film coating is applied and baking is performed, and then winding is performed after cooling, and the cooling process after the diffusion process and / or the baking process is performed. A method for producing a high-silicon steel strip in a continuous line, which comprises cooling the steel strip in a magnetic field in a part of the cooling process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61071490A JPH0643609B2 (en) | 1986-03-28 | 1986-03-28 | Method for producing high silicon steel strip in continuous line |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61071490A JPH0643609B2 (en) | 1986-03-28 | 1986-03-28 | Method for producing high silicon steel strip in continuous line |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62227034A JPS62227034A (en) | 1987-10-06 |
| JPH0643609B2 true JPH0643609B2 (en) | 1994-06-08 |
Family
ID=13462152
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61071490A Expired - Lifetime JPH0643609B2 (en) | 1986-03-28 | 1986-03-28 | Method for producing high silicon steel strip in continuous line |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0643609B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62227078A (en) * | 1986-03-28 | 1987-10-06 | Nippon Kokan Kk <Nkk> | Manufacture of high silicon steel strip continuous line |
| WO1999046417A1 (en) * | 1998-03-12 | 1999-09-16 | Nkk Corporation | Silicon steel sheet and method for producing the same |
| US5993568A (en) * | 1998-03-25 | 1999-11-30 | Nkk Corporation | Soft magnetic alloy sheet having low residual magnetic flux density |
| CN112410672B (en) * | 2020-11-18 | 2022-04-22 | 东北大学 | High-silicon gradient silicon steel thin strip and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6012686B2 (en) * | 1976-09-29 | 1985-04-03 | 株式会社日立製作所 | floating magnetic head |
-
1986
- 1986-03-28 JP JP61071490A patent/JPH0643609B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62227034A (en) | 1987-10-06 |
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