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JPH0646500B2 - Magnetic bubble transfer path - Google Patents
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JPH0646500B2 - Magnetic bubble transfer path - Google Patents

Magnetic bubble transfer path

Info

Publication number
JPH0646500B2
JPH0646500B2 JP12742184A JP12742184A JPH0646500B2 JP H0646500 B2 JPH0646500 B2 JP H0646500B2 JP 12742184 A JP12742184 A JP 12742184A JP 12742184 A JP12742184 A JP 12742184A JP H0646500 B2 JPH0646500 B2 JP H0646500B2
Authority
JP
Japan
Prior art keywords
pattern
magnetic bubble
transfer path
bubble transfer
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP12742184A
Other languages
Japanese (ja)
Other versions
JPS618789A (en
Inventor
実 広島
裕則 近藤
久彌 慶田
雅弘 箭内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12742184A priority Critical patent/JPH0646500B2/en
Priority to GB08515784A priority patent/GB2162709A/en
Publication of JPS618789A publication Critical patent/JPS618789A/en
Publication of JPH0646500B2 publication Critical patent/JPH0646500B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は磁気バブル転送路に係わり、特に非対称シエプ
ロンパターン,ハーフデイスクパターンあるいはその類
似パターンから形成される磁気バブル転送路をパターン
構造に関するものである。
Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic bubble transfer path, and more particularly to a magnetic bubble transfer path formed from an asymmetric Sieplon pattern, a half disk pattern or a similar pattern. is there.

〔発明の背景〕 一般に磁気バブル転送路としては、パーマロイ等の軟強
磁性体薄膜パターンを回転磁界により磁化する、いわゆ
るフイールドアクセス方式が主に使用されている。そし
て、この磁気バブル転送路のパターンには、第1図に要
部拡大平面図で示すような種類のパターンがこれまで主
に用いられてきた。すなわち同図(a)は非対称シエプロ
ンパターン10を基本パターンとして構成した転送路を
示し、同図(b)ハーフデイスクパターン11を基本パタ
ーンとして構成した転送路を示し、同図(c)はC字形パ
ターン12を基本パターンとして構成した転送路をそれ
ぞれ示したものである。これらの転送パターンはパラレ
ルギヤツプパターンとして例えばIEEE Transactions on
Magnetics,VoL.MAG-12,No.6,November 1976.P614-P617
およびP651-P653に論じられている。
BACKGROUND OF THE INVENTION Generally, as a magnetic bubble transfer path, a so-called field access method in which a soft ferromagnetic thin film pattern such as permalloy is magnetized by a rotating magnetic field is mainly used. As the pattern of this magnetic bubble transfer path, a pattern of the kind shown in the enlarged plan view of the main part in FIG. 1 has been mainly used so far. That is, (a) of the figure shows a transfer path formed by using the asymmetric shippron pattern 10 as a basic pattern, (b) shows a transfer path formed by using the half disk pattern 11 as a basic pattern, and (c) of FIG. 3A and 3B respectively show transfer paths configured by using the character pattern 12 as a basic pattern. These transfer patterns are, for example, IEEE Transactions on
Magnetics, VoL.MAG-12, No.6, November 1976.P614-P617
And P651-P653.

ところが、近年磁気バブルメモリ素子の高集積度化,高
密度化に伴ない、使用する磁気バブル径が従来の約1.5
μmからさらに約1.0μmへと微小化されてきている。
また同様に磁気バブル転送路も第1図に示すように基本
パターンの周期をλとすると、このλが従来では12〜16
μmであつたものに対して最近では約8μm程度に微小
化され、基本パターンはそのパターン間ギヤツプg,パ
ターン幅Wとしてホトリソグラフイ技術の限界である約
1.0μm程度までのパターンが用いられるようになり、
今後さらにこれらのパターンが微小化される傾向にあ
る。
However, due to the higher integration and higher density of magnetic bubble memory devices in recent years, the diameter of the magnetic bubble used is about 1.5.
It has been miniaturized from μm to about 1.0 μm.
Similarly, for the magnetic bubble transfer path, if the period of the basic pattern is λ, as shown in FIG.
Recently, the size of the basic pattern is reduced to about 8 μm, whereas the basic pattern is the gap g between patterns and the pattern width W, which is the limit of the photolithography technique.
Patterns up to about 1.0 μm are used,
In the future, these patterns tend to be further miniaturized.

このようにパターンが微小化されると、パターン製作プ
ロセスのわずかな変動で実際の出来上りのパターンが大
きく変形するという問題が生じてきた。第2図はこのパ
ターン変形の従来例を示したものである。同図におい
て、実線で示す正常なパターン10aに対して点線で示し
たような変形パターン10bが出来上る。この結果、基本
パターン10相互間の最小パターン間ギヤツプg′で示
す実質的なギヤツプが大幅に拡大され、この変形パター
ンにより形成された転送路に微小化された磁気バブルが
転送された場合、第3図に示すように回転磁界(HR)−
バイアス磁界(HB)特性の上限値Iが、回転磁界H
が約50e程度と低くなると、IU′と極端に劣化し、
上限値Iおよび下限値Iとで囲まれる安定動作領域
Aが狭くなるなどの問題があつた。
When the pattern is miniaturized in this manner, there has been a problem that the actual finished pattern is largely deformed by a slight change in the pattern manufacturing process. FIG. 2 shows a conventional example of this pattern modification. In the figure, the deformed pattern 10b as shown by the dotted line is completed with respect to the normal pattern 10a shown by the solid line. As a result, the substantial gear gap indicated by the minimum inter-pattern gear gap g'between the basic patterns 10 is greatly expanded, and when the miniaturized magnetic bubbles are transferred to the transfer path formed by this modified pattern, 3 rotating magnetic field as shown in FIG. (H R) -
The upper limit value I U of the bias magnetic field (H B ) characteristic is the rotating magnetic field H R
Becomes as low as about 50e, it deteriorates extremely to I U ′,
There has been a problem that the stable operation area A surrounded by the upper limit value I U and the lower limit value I D becomes narrow.

〔発明の目的〕[Object of the Invention]

したがつて本発明は、前述した従来の問題点を解消する
ためになされたものであり、その目的とするところは、
磁気バブル転送路を構成する基本パターンおよび磁気バ
ブルが微小化しても安定動作領域の広い回転磁界−バイ
アス磁界特性が容易に得られ、、また製作プロセスの変
動に対しても安定かつパターン変形の起りにくい磁気バ
ブル転送路を提供することにある。
Therefore, the present invention has been made to solve the above-mentioned conventional problems, and the purpose thereof is to:
A rotating magnetic field-bias magnetic field characteristic with a wide stable operation area can be easily obtained even if the basic pattern and the magnetic bubble forming the magnetic bubble transfer path are miniaturized, and the pattern is stable and does not deform even when the manufacturing process is changed. It is to provide a difficult magnetic bubble transfer path.

〔発明の概要〕[Outline of Invention]

本発明は、転送パターン足元部の先端が写真処理で丸み
を帯び、それによって隣合う転送パターンの出力部と入
力部間のギャップが広がるという問題を防ぐために足元
先端部に突出部を設けたものであり、本発明によれば下
記の磁気バブル転送路が提供される。
According to the present invention, in order to prevent the problem that the tip of the foot portion of the transfer pattern is rounded by the photographic process, and thereby the gap between the output portion and the input portion of the adjacent transfer pattern is widened, the foot tip portion is provided with a protrusion. According to the present invention, the following magnetic bubble transfer path is provided.

磁気バブルを転入する入り口側足部と転出する出口側足
部とを有する磁気バブル転送パターンを磁気バブル転送
方向に沿って配列してなる磁気バブル転送路において、
前記足部の先端部に、前記転送パターンと同一部材から
なり、かつ前記足部を転送方向に測った幅より狭い幅を
有するパターン突出部を一体的に設けた磁気バブル転送
路。
In a magnetic bubble transfer path formed by arranging a magnetic bubble transfer pattern having an inlet side foot portion into which a magnetic bubble is transferred in and an outlet side foot portion from which it is transferred out along the magnetic bubble transfer direction,
A magnetic bubble transfer path integrally formed at the tip of the foot portion with a pattern protrusion made of the same member as the transfer pattern and having a width narrower than the width of the foot portion measured in the transfer direction.

〔発明の実施例〕Example of Invention

次に図面を用いて本発明の実施例を詳細に説明する。 Next, embodiments of the present invention will be described in detail with reference to the drawings.

第4図は本発明による磁気バブル転送路の一実施例を説
明するための要部拡大平面図である。同図において、非
対称シエブロンパターン10′の磁気バブル転送方向Pに
対する磁気バブルの入口側足部を10I,出口側足部を10O
のしたとき、これらの足部10I,10Oの先端部には磁気バ
ブル転送方向Pと交差する方向に段階状に突出する突出
部10Cが一体的に設けられている。
FIG. 4 is an enlarged plan view of an essential part for explaining one embodiment of the magnetic bubble transfer path according to the present invention. In the figure, the inlet side foot of the magnetic bubble is 10 I and the outlet side foot is 10 O with respect to the magnetic bubble transfer direction P of the asymmetric chevron pattern 10 ′.
At this time, the projecting portions 10 C projecting stepwise in the direction intersecting the magnetic bubble transfer direction P are integrally provided at the tip portions of these foot portions 10 I and 10 O.

また、このような非対称シエブロパターン10′の足部10
I,10O先端部に突出部10cを設けるには、この非対称
シエブロパターン10′を転写させるマスクとして、第5
図に示すようなガラス基板上に電子ビーム描画法で形成
されるクロムマスクパターン100の前記足部10I,10O
端部に対応する部分に、前述した段階状突出部10Cとほ
ぼ同等形状のフオトマスク100cを電子ビーム描画によ
り形成したものを使用することにより、容易に達成でき
る。
In addition, the foot portion 10 of such an asymmetrical Siebrow pattern 10 '
In order to provide the protrusion 10c at the tip of I , 10 O , a fifth mask is used to transfer the asymmetrical Sieblo pattern 10 '.
The chrome mask pattern 100 formed on the glass substrate by the electron beam drawing method as shown in the figure has a shape substantially the same as that of the stepped protrusion 10 C in the portion corresponding to the tips of the legs 10 I and 10 O. This can be easily achieved by using the photomask 100c of 1) formed by electron beam drawing.

このように非対称シエブロパタン10′の足部10I,10O
端部に磁気バブル転送方向と交差する方向に突出する突
出部10Cを設けたことにより、非対称シエブロンパター
ン10′の製作プロセスにわずかの変動があつても、足部
10I,10O先端部に生ずるパターン変形は第6図に点線で
示すような変形パターン10b′の形状となり、シエブロ
ンパタン10′相互間の最小パターン間ギヤツプgに実質
的な変動はなく、充分確保することができる。したがつ
て、微小化された磁気バブルは相互に隣接する非対称シ
エブロンパターン10′の出口側足部10Oから磁気バブル
転送方向Pに隣接する非対称シエブロンパターン10′の
入口側足部10Iに容易に転送され、回転磁界HRが約50
e程度に低下しても、第3図に上限値Iで示すよう
になり、安定動作領域を拡大させることができる。
In this way, by providing the protrusions 10 C projecting in the direction intersecting the magnetic bubble transfer direction at the tips of the feet 10 I and 10 O of the asymmetrical siebelo-pattern 10 ′, it is possible to reduce the manufacturing process of the asymmetrical sieblon pattern 10 ′. Even if there is a change in
The pattern deformation generated at the tips of 10 I and 10 O becomes the shape of the deformation pattern 10b 'as shown by the dotted line in FIG. 6, and there is no substantial variation in the minimum pattern gap g between the sieblon patterns 10'. You can secure enough. Therefore, the miniaturized magnetic bubbles flow from the exit side foot portions 10 O of the asymmetric chevron patterns 10 ′ adjacent to each other to the entrance side foot portions 10 I of the asymmetric chevron pattern 10 ′ adjacent to the magnetic bubble transfer direction P. Easily transferred to a rotating magnetic field H R of about 50
Even if it is reduced to about e, the upper limit value I U is shown in FIG. 3, and the stable operation region can be expanded.

第7図(a)〜(f)は本発明による磁気バブル転送路の他の
実施例を示す要部拡大断面図である。同図(a)におい
て、非対称シエブロパターン10′の磁気バブル出口側足
部10Oの先端部のみに、磁気バブル径の1/3〜1倍程度の
パターン長を有するバー状の突出部10dを磁気バブル転
送方向と直交する方向に設けたものである。同図(b)は
同様に磁気バブル入口側足部10Iの先端部のみにバー状
の突出部10Oを設け、同図(c)は磁気バブル入口側足部10
Iおよび出口側足部10Oの双方に突出部10d,10eをそれぞ
れ設けたものである。また同図(d)は磁気バブル出口側
足部10Oに、磁気バブル転送方向Pに屈曲部を有する突
出部10fを設け、同図(e)は磁気バブル入口側足部10
Iに、磁気バブル転送方向Pと逆方向に屈曲部を有する
突出部10g を設け、同図(f)は磁気バブル入口側足部10I
に同図(b)示すバー状の突出部10eを、その出力側足部10
Oに同図(d)に示す突出部10fをそれぞれ設けたものであ
る。
7 (a) to 7 (f) are enlarged cross-sectional views of the essential parts showing another embodiment of the magnetic bubble transfer path according to the present invention. In FIG. 3A, a bar-shaped protruding portion 10d having a pattern length of about 1/3 to 1 times the magnetic bubble diameter is provided only at the tip of the magnetic bubble outlet side foot portion 10 O of the asymmetric Siebrow pattern 10 ′. Are provided in a direction orthogonal to the magnetic bubble transfer direction. In the same figure (b), a bar-shaped protrusion 10 O is similarly provided only on the tip of the magnetic bubble inlet side foot 10 I , and in the same figure (c) the magnetic bubble inlet side foot 10 I is provided.
I and the outlet-side leg portion 10 O both the projecting portion 10d of, 10e to those provided respectively. Further, FIG. 7D shows a magnetic bubble outlet side foot 10 O provided with a protrusion 10 f having a bent portion in the magnetic bubble transfer direction P, and FIG.
To I, the protruding portion 10g having a bent portion to the magnetic bubble transfer direction P opposite direction is provided, and FIG. (F) a magnetic bubble inlet side leg portion 10 I
The bar-shaped protrusion 10e shown in FIG.
The protrusions 10f shown in FIG.

このように非対称シエブロンパターン10′の磁気バブル
入出口側足部に各種の突出部を設けることにより、製作
プロセスの変動に対してシエブロンパターン10′間のギ
ヤツプgが実質的にほぼ所定値に確保出来るので、磁気
バブル転送特性が向上し、第3図で説明したように回転
磁界(HR)−バイアス磁界(HB)特性を大幅に改良する
ことができる。
By providing various protrusions on the magnetic bubble inlet / outlet side foot of the asymmetrical chevron pattern 10 'in this way, the gear gap g between the chevron patterns 10' is substantially at a predetermined value against variations in the manufacturing process. since can be secured to, and improved magnetic bubble transfer characteristic, the rotating magnetic field as described in FIG. 3 (H R) - a bias magnetic field (H B) characteristics can be greatly improved.

なお、前述した実施例においては、磁気バブル転送路パ
ターンとして非対称シエブロンパターンを基本パターン
としたものについて説明したが、本発明はこれに限定さ
れるものではなく、第1図に説明したハーフデイスクパ
ターン,C字形パターンあるいは類似のパラレルギヤツ
プパターンに本発明を適用しても前述と全く同様な効果
が得られることは勿論である。
In the above-described embodiment, the magnetic bubble transfer path pattern has been described as the basic pattern of the asymmetrical chevron pattern, but the present invention is not limited to this, and the half disk described in FIG. Even if the present invention is applied to a pattern, a C-shaped pattern or a similar parallel gear pattern, the same effect as described above can be obtained.

〔発明の効果〕〔The invention's effect〕

以上説明したように本発明によれば、基本パターン間の
ギヤツプ部での磁気バブル転送特性を向上させることが
できるので、品質および信頼性の高い高密度化磁気バブ
ルメモリ素子が実現可能となるなどの極めて優れた効果
が得られる。
As described above, according to the present invention, it is possible to improve the magnetic bubble transfer characteristics in the gap portion between the basic patterns, so that it is possible to realize a high-density magnetic bubble memory device with high quality and reliability. The extremely excellent effect of is obtained.

【図面の簡単な説明】 第1図および第2図は従来の磁気バブル転送路の一例を
説明するための要部拡大平面図、第3図は従来および本
発明による磁気バブル転送路の回転磁界(HR)−バイア
ス磁界(HB)特性を示す図、第4図は本発明による磁気
バブル転送路の一実施例を示す要部拡大平面図、第5図
は本発明による磁気バブル転送路を製造する際に用いる
クロムマスクパターンの一例を示す要部拡大平面図、第
6図は本発明による磁気バブル転送路が製造上のバラツ
キによりパターン変形を起した状態を説明するための
図、第7図(a)〜(f)は本発明による磁気バブル転送路の
他の実施例を説明するための要部拡大平面図である。 10′……非対称シエブロンパターン、10I……磁気バブ
ル入口側足部、10O……磁気バブル出口側足部、10c,10
d,10e,10f……突出部、100……クロムマスクパター
ン、100c……フオトマスク。
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 and FIG. 2 are enlarged plan views of main parts for explaining an example of a conventional magnetic bubble transfer path, and FIG. 3 is a rotating magnetic field of the magnetic bubble transfer path according to the related art and the present invention. (H R) - shows the bias magnetic field (H B) characteristics, Figure 4 is a fragmentary enlarged plan view showing an embodiment of a magnetic bubble transfer path according to the present invention, magnetic bubble transfer path according to Fig. 5 the invention FIG. 6 is an enlarged plan view of an essential part showing an example of a chrome mask pattern used when manufacturing the magnetic disk, FIG. 6 is a view for explaining a state in which the magnetic bubble transfer path according to the present invention undergoes pattern deformation due to manufacturing variations. 7 (a) to 7 (f) are enlarged plan views of essential parts for explaining another embodiment of the magnetic bubble transfer path according to the present invention. 10 ′ …… Asymmetrical chevron pattern, 10 I …… magnetic bubble inlet side foot, 10 O …… magnetic bubble outlet side foot, 10c, 10
d, 10e, 10f …… Projection, 100 …… Chrome mask pattern, 100c …… Photo mask.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】磁気バブルを転入する入り口側足部と転出
する出口側足部とを有する磁気バブル転送パターンを磁
気バブル転送方向に沿って配列してなる磁気バブル転送
路において、前記足部の先端部に、前記転送パターンと
同一部材からなり、かつ前記足部を転送方向に測った幅
より狭い幅を有するパターン突出部を一体的に設けたこ
とを特徴とする磁気バブル転送路。
1. A magnetic bubble transfer path having a magnetic bubble transfer pattern having an inlet side foot portion into which a magnetic bubble is transferred and an outlet side foot portion from which the magnetic bubble is transferred is arranged along a magnetic bubble transfer direction. A magnetic bubble transfer path, wherein a pattern projecting portion, which is made of the same member as the transfer pattern and has a width narrower than a width of the foot portion measured in the transfer direction, is integrally provided at a tip portion.
JP12742184A 1984-06-22 1984-06-22 Magnetic bubble transfer path Expired - Lifetime JPH0646500B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP12742184A JPH0646500B2 (en) 1984-06-22 1984-06-22 Magnetic bubble transfer path
GB08515784A GB2162709A (en) 1984-06-22 1985-06-21 A magnetic bubble memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12742184A JPH0646500B2 (en) 1984-06-22 1984-06-22 Magnetic bubble transfer path

Publications (2)

Publication Number Publication Date
JPS618789A JPS618789A (en) 1986-01-16
JPH0646500B2 true JPH0646500B2 (en) 1994-06-15

Family

ID=14959542

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12742184A Expired - Lifetime JPH0646500B2 (en) 1984-06-22 1984-06-22 Magnetic bubble transfer path

Country Status (1)

Country Link
JP (1) JPH0646500B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0646502B2 (en) * 1985-11-13 1994-06-15 株式会社日立製作所 Magnetic bubble memory

Also Published As

Publication number Publication date
JPS618789A (en) 1986-01-16

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