JPH0647292B2 - Thin-film thermal head - Google Patents
Thin-film thermal headInfo
- Publication number
- JPH0647292B2 JPH0647292B2 JP59260222A JP26022284A JPH0647292B2 JP H0647292 B2 JPH0647292 B2 JP H0647292B2 JP 59260222 A JP59260222 A JP 59260222A JP 26022284 A JP26022284 A JP 26022284A JP H0647292 B2 JPH0647292 B2 JP H0647292B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- heating resistor
- thin
- thermal head
- transition metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title claims description 38
- 238000010438 heat treatment Methods 0.000 claims description 30
- 229910052723 transition metal Inorganic materials 0.000 claims description 17
- 150000003624 transition metals Chemical class 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 12
- 238000004544 sputter deposition Methods 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 239000010955 niobium Substances 0.000 claims 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 10
- 239000010408 film Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 238000005477 sputtering target Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000007651 thermal printing Methods 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- ABLLXXOPOBEPIU-UHFFFAOYSA-N niobium vanadium Chemical compound [V].[Nb] ABLLXXOPOBEPIU-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Electronic Switches (AREA)
- Non-Adjustable Resistors (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、熱記録印字に用いる薄膜型サーマルヘッドに
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film type thermal head used for thermal recording printing.
従来の技術 一般に、熱印字記録に用いられるサーマルヘッドは、絶
縁性基板上に複数個の発熱抵抗体および該発熱抵抗体に
電力を供給するための電極を設け、個々の発熱抵抗体に
電力を供給することによりジュール熱を発生させ、これ
により印字記録を行なうものである。2. Description of the Related Art Generally, a thermal head used for thermal printing recording is provided with a plurality of heating resistors and electrodes for supplying power to the heating resistors on an insulating substrate, and power is supplied to each heating resistor. When supplied, Joule heat is generated, and printing and recording are thereby performed.
これらに用いる発熱抵抗体としては、薄膜発熱抵抗体が
熱応答性がよく高解像度化ができ耐熱性にも優れ寿命が
長く信頼性が高い等の点で最も優れている。しかしなが
ら、近年のサーマルヘッドの熱印字記録の高速化を実現
させるためには、数ミリ秒の短い印字パルスにより記録
を行なわなければならず、そのためには、薄膜発熱抵抗
体に大電力を投入し４００℃以上もの温度を発生させる
必要がある。加えて、高電力は、薄膜発熱抵抗体の抵抗
値を大きくしない限り必然的に電流が大きくなるため、
高抵抗値を有することが必要となる。As a heat generating resistor used for these, a thin film heat generating resistor is the most excellent in that it has good thermal response, can achieve high resolution, has excellent heat resistance, has a long life, and has high reliability. However, in order to realize high-speed thermal printing recording of a thermal head in recent years, it is necessary to perform recording with a short printing pulse of several milliseconds, and for that purpose, a large amount of electric power is applied to the thin film heating resistor. It is necessary to generate temperatures as high as 400 ° C or higher. In addition, high power inevitably results in a large current unless the resistance value of the thin-film heating resistor is increased.
It is necessary to have a high resistance value.
以上の点から薄膜発熱抵抗体としては、高温安定性と、
高抵抗値の実現が可能であることの２つが最低限必要で
ある。From the above points, as a thin film heating resistor, high temperature stability,
The minimum requirement is that a high resistance value can be realized.
従来は耐熱性を考慮して前記薄膜発熱抵抗体と窒化タン
タルで形成していたが、窒化タンタルは３００〜４００
℃程度で急激に酸化し抵抗値が増大する。通常これを避
けるために前記窒化タンタルの上層に耐酸化防止層を形
成するが、それでも尚長時間駆動時の抵抗変化は大き
く、高温安定性に劣るものであった。また、前記窒化タ
ンタルは比抵抗が２５０μΩ−cm程度と小さく、大きな
抵抗値を得ようとすれば、Ｌ／Ｗ＝２（Ｌは、薄膜発熱
抵抗体のドット長、Ｗはドット幅）で、５００Ωの抵抗
値を得るため（最近の技術の流れでは、これ以上の抵抗
値も要求される）には、膜厚を１００Å程度と非常に薄
くしなければならず、製造時の制御が極めて難しくまた
膜質としても不安定となる。これを避けるためには、窒
化タンタル厚を大きくし蛇行形状等にパターン形成し前
記Ｌ長を増すことにより抵抗値を上げることも可能であ
るが、高解像化する際この方法は製造上極めて難しい。Conventionally, in consideration of heat resistance, the thin-film heating resistor and tantalum nitride are formed, but tantalum nitride is 300 to 400.
Oxidation suddenly occurs at about ℃ and the resistance value increases. In order to avoid this, an anti-oxidation layer is usually formed on the tantalum nitride layer, but the resistance change during long-time driving is still large and the high temperature stability is poor. Further, the tantalum nitride has a small specific resistance of about 250 μΩ-cm, and in order to obtain a large resistance value, L / W = 2 (L is the dot length of the thin film heating resistor, W is the dot width), In order to obtain a resistance value of 500 Ω (the recent trend of technology requires a higher resistance value), the film thickness must be extremely thin, about 100 Å, which is extremely difficult to control during manufacturing. Also, the film quality becomes unstable. In order to avoid this, it is possible to increase the resistance value by increasing the thickness of tantalum nitride and forming a pattern in a meandering shape and increasing the L length, but this method is extremely difficult to manufacture in the case of high resolution. difficult.
発明が解決しようとする問題点 上述したように、従来のサーマルヘッドの薄膜発熱抵抗
体を窒化タンタルで形成したものは高温安定性と高抵抗
値の実現とが達成できず、この結果としてサーマルヘッ
ドの高速化、高耐熱化のためには尚十分な特性を有して
いない。かかる点から、本発明はサーマルヘッドの高速
化、高耐熱化のために必要な高温安定性と高抵抗値の実
現とを達成することを目的とするものである。Problems to be Solved by the Invention As described above, the thin film heating resistor of the conventional thermal head formed of tantalum nitride cannot achieve high temperature stability and a high resistance value, and as a result, the thermal head It does not have sufficient characteristics for higher speed and higher heat resistance. From this point of view, it is an object of the present invention to achieve the high temperature stability and the high resistance value necessary for increasing the speed and heat resistance of the thermal head.
問題点を解決するための手段 そしてこの目的を達成するために本発明は、導電性を有
する遷移金属炭化物と珪素とをスパッタリングにより絶
縁性基板上に付着させて薄膜発熱抵抗体を形成したもの
である。Means for Solving the Problems And in order to achieve this object, the present invention provides a thin film heating resistor by depositing conductive transition metal carbide and silicon on an insulating substrate by sputtering. is there.
作 用 上述した構成における導電性を有する遷移金属炭化物
は、硬質で高融点をもち化学的に安定であるが比抵抗が
必ずしも大きくない。そこで本発明はスパッタリングに
よりこの遷移金属炭化物と珪素を絶縁性基板上に付着さ
せることにより、遷移金属炭化物と珪素を混合させたも
のであり、これにより高比抵抗で高温安定性に優れ高耐
熱性に富んだ薄膜発熱抵抗体を有する薄膜型サーマルヘ
ッドが提供できることとなる。The transition metal carbide having conductivity in the above-described structure is hard, has a high melting point, and is chemically stable, but its specific resistance is not necessarily large. Therefore, the present invention is a mixture of transition metal carbide and silicon by depositing the transition metal carbide and silicon on an insulating substrate by sputtering, which results in high specific resistance, high temperature stability, and high heat resistance. It is possible to provide a thin film type thermal head having a rich thin film heating resistor.
実施例 第１図に本発明における薄膜型サーマルヘッドの基本構
成を示す。先ず、電気的な絶縁性基板１上に、スパッタ
リングにより、導電性を有する遷移金属炭化物と珪素と
を付着させて薄膜発熱抵抗体２を形成し、次にこの上に
前記薄膜発熱抵抗体に通電するための電極３を形成し、
その後、フォトリソグラフィー技術によりパターン形成
し、次にこの上に絶縁物、半導体等でなる保護膜４（保
護膜４は、通常、薄膜発熱抵抗体の酸化防止と、紙に印
字する際の接触摩耗を防ぐために存在する）を形成し
た。本実施例では、導電性を有する遷移金属炭化物と珪
素でなる薄膜発熱抵抗体２として、ＴｉＣとＳｉでなる
薄膜発熱抵抗体について述べるものとする。ＴｉＣとＳ
ｉでなる薄膜発熱抵抗体は、スパッタリング技術を用い
て容易に形成することができる。第２図には、スパッタ
リングターゲットの一例として、本実施例で用いたスパ
ッタリングターゲットを示す。１５０mmφＴｉＣターゲ
ット５上に、Ｓｉ板６を各々面積比として１０％、２０
％、３０％、４０％と変えて、Ａｒガスにより１．５×
１０-2Ｔｏｒｒ、ＲＦパワー４００Ｗ、基板温度３００
℃で、高周波スパッタリングを行い、電気的絶縁基板１
上にＴｉＣとＳｉでなる薄膜発熱抵抗体を形成した。第
３図には前記方法により得られたＴｉＣとＳｉでなる薄
膜発熱抵抗体の比抵抗と抵抗温度係数を示す。同図で
は、横軸にＳｉターゲット面積比をとり、縦軸に比抵
抗、抵抗温度係数をとっている。また、曲線７、曲線８
は各々基板温度３００℃スパッタリング直後の比抵抗、
抵抗温度係数であり、曲線９、曲線１０は各々スパッタ
リング後、６５０℃２時間の真空熱処理を施した後の比
抵抗、抵抗温度係数である。第３図より明らかな通り、
３００〜６５０℃の間で比抵抗変動は殆んどなく、ま
た、抵抗温度係数の変動も極めて小さく、従ってスパッ
タリング時基板温度制御が極めて容易に作成でき、比抵
抗制御等も容易で工業的価値は、極めて大きいと言え
る。また、比抵抗２０００μΩ−cmで、抵抗温度係数−
２５０ｐｐｍ／ｄｅｇというのは、従来の窒化タンタル
に比して比抵抗で１０倍程度、抵抗温度係数で同程度で
あり、窒化タンタルに比して格段の特性改善になってい
る。ちなみに、第１図に示す通りの構造として、サーマ
ルヘッドとした後、これにパルス幅１ｍ sec，パルス周
期１０ｍ secで連続パルス印加を行い、６×１０4回パ
ルスを印加した際に、抵抗値変動＋１０％を与える印加
電力（Ｗ／mm2）（破断電力を呼ぶ）を、ＴｉＣとＳｉ
でなる薄膜発熱抵抗体および、窒化タンタル薄膜発熱抵
抗体について示すと下の表１の通りとなる。EXAMPLE FIG. 1 shows the basic structure of a thin film thermal head according to the present invention. First, a transition metal carbide having conductivity and silicon are deposited on an electrically insulating substrate 1 by sputtering to form a thin film heating resistor 2, and then the thin film heating resistor is energized. To form an electrode 3 for
After that, a pattern is formed by a photolithography technique, and then a protective film 4 made of an insulating material, a semiconductor, or the like is formed thereon (the protective film 4 is usually used to prevent oxidation of a thin film heating resistor and to prevent contact abrasion when printing on paper) Is present to prevent the formation of). In this embodiment, as the thin film heating resistor 2 made of conductive transition metal carbide and silicon, a thin film heating resistor made of TiC and Si will be described. TiC and S
The thin-film heating resistor made of i can be easily formed by using the sputtering technique. FIG. 2 shows the sputtering target used in this example as an example of the sputtering target. The Si plate 6 is provided on the 150 mmφ TiC target 5 in an area ratio of 10%, 20
%, 30%, 40%, 1.5 × by Ar gas
10 -2 Torr, RF power 400W, substrate temperature 300
High frequency sputtering at ℃, electrically insulating substrate 1
A thin-film heating resistor made of TiC and Si was formed on top. FIG. 3 shows the specific resistance and the temperature coefficient of resistance of the thin film heating resistor made of TiC and Si obtained by the above method. In the figure, the horizontal axis represents the Si target area ratio, and the vertical axis represents the resistivity and the temperature coefficient of resistance. Also, curves 7 and 8
Is the specific resistance immediately after the substrate temperature 300 ° C. sputtering,
Curves 9 and 10 are the temperature coefficient of resistance, and the curves 9 and 10 are the specific resistance and the temperature coefficient of resistance after the vacuum heat treatment at 650 ° C. for 2 hours after sputtering. As is clear from Fig. 3,
There is almost no change in resistivity between 300 and 650 ° C, and the change in temperature coefficient of resistance is extremely small. Therefore, substrate temperature control during sputtering can be created very easily, and control of specific resistance is also easy. Can be said to be extremely large. The specific resistance is 2000 μΩ-cm, and the temperature coefficient of resistance is −
The value of 250 ppm / deg is about 10 times as high as the specific resistance of the conventional tantalum nitride and about the same as the temperature coefficient of resistance, which is a remarkable improvement in the characteristics as compared with the tantalum nitride. By the way, as a structure as shown in FIG. 1, after forming a thermal head, a continuous pulse was applied to this with a pulse width of 1 msec and a pulse period of 10 msec, and a resistance value was measured when 6 × 10 4 pulses were applied. The applied power (W / mm 2 ) that gives a fluctuation of + 10% (called the breaking power) is TiC and Si.
The thin film heating resistor and the tantalum nitride thin film heating resistor made of are shown in Table 1 below.
表より、耐熱性の面でもＴｉＣとＳｉでなる薄膜発熱抵
抗体は窒化タンタルに比して格段に改善されていること
は明らかである。 From the table, it is apparent that the thin-film heat-generating resistor made of TiC and Si is much improved in heat resistance as compared with tantalum nitride.
このようにＴｉＣとＳｉで構成される薄膜発熱抵抗体
は、高比抵抗で高温安定性に優れ耐熱性に富んでおり、
これに用いた薄膜型サーマルヘッドは高速化，高耐熱化
に適応できる。As described above, the thin film heating resistor composed of TiC and Si has high specific resistance, high temperature stability, and excellent heat resistance.
The thin-film thermal head used for this can be adapted to high speed and high heat resistance.
尚、本実施例では、導電性を有する遷移金属炭化物を構
成する遷移金属としてチタンを用いたが、チタン以外の
遷移金属例えば、ジルコニウム、ハフニウム、バナジウ
ムニオブ、タンタル、モリブデン、タングステンのうち
の一種または合金を用いてもこれらの炭化物は硬質で高
温安定性を有し化学的にも安定であり、同様の効果を得
ることができる。In this example, titanium was used as the transition metal constituting the conductive transition metal carbide, but a transition metal other than titanium, for example, zirconium, hafnium, vanadium niobium, tantalum, molybdenum, or one of tungsten or Even if an alloy is used, these carbides are hard, have high temperature stability, and are chemically stable, and similar effects can be obtained.
発明の効果 以上述べてきたように本発明は導電性を有する遷移金属
炭化物と珪素とをスパッタリングにより絶縁性基板上に
付着させて薄膜発熱抵抗体を形成したものである。つま
り上記構成における導電性を有する遷移金属炭化物は、
硬質で高融点をもち化学的に安定であるが比抵抗が必ず
しも大きくない。そこで本発明はスパッタリングにより
この遷移金属炭化物と珪素を絶縁性基板上に付着させる
ことにより、遷移金属炭化物と珪素を混合させたもので
あり、これにより高比抵抗で高温安定性に優れ高耐熱性
に富んだ薄膜発熱抵抗体を有する薄膜型サーマルヘッド
が提供できることとなる。EFFECTS OF THE INVENTION As described above, the present invention forms a thin film heating resistor by depositing conductive transition metal carbide and silicon on an insulating substrate by sputtering. That is, the transition metal carbide having conductivity in the above structure is
It is hard and has a high melting point and is chemically stable, but its resistivity is not necessarily large. Therefore, the present invention is a mixture of transition metal carbide and silicon by depositing the transition metal carbide and silicon on an insulating substrate by sputtering, which results in high specific resistance, high temperature stability, and high heat resistance. It is possible to provide a thin film type thermal head having a rich thin film heating resistor.
第１図は、本発明における薄膜型サーマルヘッドの基本
構造を示す断面図、第２図，第３図は、本発明の一実施
例としての薄膜発熱抵抗体形成に用いるスパッタリング
ターゲット形状を示す平面図、薄膜発熱抵抗体の比抵抗
と抵抗温度係数を示す特性図である。 ２……本発明における導電性を有する遷移金属炭化物と
珪素からなる薄膜発熱抵抗体。FIG. 1 is a sectional view showing the basic structure of a thin film thermal head according to the present invention, and FIGS. 2 and 3 are plan views showing the shape of a sputtering target used for forming a thin film heating resistor as an embodiment of the present invention. FIG. 6 is a characteristic diagram showing the specific resistance and the temperature coefficient of resistance of the thin-film heating resistor. 2 ... A thin film heating resistor made of conductive transition metal carbide and silicon in the present invention.
Claims (2)
通電して発熱させ、感熱記録を行なう薄膜型サーマルヘ
ッドにおいて、前記薄膜発熱抵抗体は、絶縁性基板上
に、導電性を有する遷移金属炭化物と珪素をスパッタリ
ングにより付着させて形成したことを特徴とする薄膜型
サーマルヘッド。1. A thin film thermal head for conducting thermal recording by energizing a thin film heating resistor formed on an insulating substrate to generate heat, wherein the thin film heating resistor has conductivity on the insulating substrate. A thin-film thermal head formed by depositing transition metal carbide and silicon by sputtering.
遷移金属が、チタニウム、ジルコニウム、ハフニウム、
バナジウム、ニオブ、タンタル、モリブデン、タングス
テンのうちから選ばれたことを特徴とする特許請求の範
囲第１項記載の薄膜型サーマルヘッド。2. The transition metal constituting the conductive transition metal carbide is titanium, zirconium, hafnium,
The thin-film thermal head according to claim 1, which is selected from vanadium, niobium, tantalum, molybdenum, and tungsten.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59260222A JPH0647292B2 (en) | 1984-12-10 | 1984-12-10 | Thin-film thermal head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59260222A JPH0647292B2 (en) | 1984-12-10 | 1984-12-10 | Thin-film thermal head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61137303A JPS61137303A (en) | 1986-06-25 |
| JPH0647292B2 true JPH0647292B2 (en) | 1994-06-22 |
Family
ID=17345043
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59260222A Expired - Lifetime JPH0647292B2 (en) | 1984-12-10 | 1984-12-10 | Thin-film thermal head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0647292B2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50161694A (en) * | 1974-06-20 | 1975-12-27 | ||
| JPS5712281A (en) * | 1980-06-04 | 1982-01-22 | Weyerhaeuser Co | Method of and apparatus for venner |
-
1984
- 1984-12-10 JP JP59260222A patent/JPH0647292B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61137303A (en) | 1986-06-25 |
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