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JPH0648642B2 - Voltage nonlinear porcelain composition and method for producing the same - Google Patents
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JPH0648642B2 - Voltage nonlinear porcelain composition and method for producing the same - Google Patents

Voltage nonlinear porcelain composition and method for producing the same

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Publication number
JPH0648642B2
JPH0648642B2 JP2076770A JP7677090A JPH0648642B2 JP H0648642 B2 JPH0648642 B2 JP H0648642B2 JP 2076770 A JP2076770 A JP 2076770A JP 7677090 A JP7677090 A JP 7677090A JP H0648642 B2 JPH0648642 B2 JP H0648642B2
Authority
JP
Japan
Prior art keywords
voltage
porcelain composition
nonlinear
composition
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2076770A
Other languages
Japanese (ja)
Other versions
JPH03278402A (en
Inventor
典之 神津
勝 増山
文男 石田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Yuden Co Ltd
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Taiyo Yuden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Taiyo Yuden Co Ltd filed Critical Taiyo Yuden Co Ltd
Priority to JP2076770A priority Critical patent/JPH0648642B2/en
Publication of JPH03278402A publication Critical patent/JPH03278402A/en
Publication of JPH0648642B2 publication Critical patent/JPH0648642B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Compositions Of Oxide Ceramics (AREA)
  • Thermistors And Varistors (AREA)

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は電圧非直線磁器組成物{非直線的な電圧−電流
特性を有し、電圧非直線抵抗体(バリスタ)の素体を形
成する磁器組成物}、特に酸化亜鉛を主成分とする電圧
非直線磁器組成物に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a voltage non-linear porcelain composition {having non-linear voltage-current characteristics and forming an element of a voltage non-linear resistor (varistor). Porcelain composition}, and particularly to a voltage nonlinear porcelain composition containing zinc oxide as a main component.

[従来の技術] 酸化亜鉛を主成分とする電圧非直線磁器組成物として
は、ZnO粉末に、例えばBi,Sb等の各種金属酸化
物粉末を添加して混合し、これらを例えばディスク形状
に成形した後、酸化性雰囲気中において1200℃程度
の温度で焼結したものが知られている。
[Prior Art] As a voltage non-linear porcelain composition containing zinc oxide as a main component, various metal oxide powders such as Bi and Sb are added to ZnO powder and mixed, and these are formed into a disk shape, for example. After that, it is known to be sintered at a temperature of about 1200 ° C. in an oxidizing atmosphere.

この例の電圧非直線磁器組成物では、焼結によって、電
圧非直線磁器組成物中にZnOからなる半導体粒子と、
この半導体粒子の粒界に形成されたBi等の金属
酸化物の粒界相と、ZnSb等からなるスピネ
ル相とが形成される。
In the voltage nonlinear ceramic composition of this example, by sintering, semiconductor particles made of ZnO in the voltage nonlinear ceramic composition,
A grain boundary phase of a metal oxide such as Bi 2 O 3 formed at the grain boundary of the semiconductor particles and a spinel phase formed of Zn 2 Sb 3 O 4 are formed.

電圧非直線磁器組成物の非直線的な電圧−電流特性は、
このZnOからなる半導体粒子とBi等の金属酸
化物の粒界相との界面によって生ずるものである。
The non-linear voltage-current characteristics of the voltage non-linear porcelain composition are
It is generated by the interface between the semiconductor particles made of ZnO and the grain boundary phase of the metal oxide such as Bi 2 O 3 .

ところで、電圧非直線磁器組成物の非直線的な電圧−電
流特性は、バリスタ電圧Vと非直線係数αで評価され
る。
By the way, the non-linear voltage-current characteristic of the voltage non-linear porcelain composition is evaluated by the varistor voltage V and the non-linear coefficient α.

ここで、バリスタ電圧Vは、電気抵抗が急激に減少する
ようになる電圧であり、非直線係数αは電圧非直線磁器
組成物中を流れる電流Iの電圧V対する変化を次式で近
似したときに得られる数値である。
Here, the varistor voltage V is the voltage at which the electrical resistance suddenly decreases, and the nonlinear coefficient α is obtained by approximating the change of the current I flowing through the voltage nonlinear ceramic composition with respect to the voltage V by the following equation. It is a numerical value obtained in.

I=KVα (但し、Iは電圧非直線磁器組成物中を流れる電流、V
は印加電圧、Kは定数) そして、酸化亜鉛を主成分とする電圧非直線磁器組成物
は、非直線係数αが50程度と大きいので、異常高電圧
(サージ)に対する応答性の点で特に優れている。
I = KV α (where I is the current flowing in the voltage nonlinear ceramic composition, V
Is a voltage applied, and K is a constant. And, since the voltage nonlinear porcelain composition containing zinc oxide as a main component has a large nonlinear coefficient α of about 50, it is particularly excellent in response to an abnormal high voltage (surge). ing.

また、この酸化亜鉛を主成分とする電圧非直線磁器組成
物は、原料のZnOが安いので、安く製造することがで
きるものである。
Further, this voltage nonlinear porcelain composition containing zinc oxide as a main component can be manufactured at a low cost because the raw material ZnO is cheap.

[発明が解決しようとする課題] しかし、この酸化亜鉛を主成分とする従来の電圧非直線
磁器組成物は、バリスタ電圧Vが200V程度と高いの
で、各種小型モータのような低電圧を使用する電気機器
から発生するノイズ除去用としては使用できなかった。
[Problems to be Solved by the Invention] However, since the conventional voltage nonlinear porcelain composition containing zinc oxide as a main component has a high varistor voltage V of about 200 V, a low voltage such as various small motors is used. It could not be used for removing noise generated from electrical equipment.

本発明は、コストの安いZnO系の材料を使用して、バ
リスタ電圧の低い電圧非直線磁器組成物を得ることを目
的とするものである。
An object of the present invention is to obtain a voltage nonlinear porcelain composition having a low varistor voltage by using a ZnO-based material that is inexpensive.

[課題を解決するための手段] 本発明に係る電圧非直線磁器組成物は、酸化亜鉛を主成
分とし、副成分として少なくとも1種以上の金属酸化物
を含有する組成物を焼成してなる焼結体であって、この
焼結体は、還元されて半導体の状態にある半導体部と、
この半導体部の上に所定の厚さで層状に被覆形成された
酸化層とからなる。
[Means for Solving the Problems] The voltage nonlinear porcelain composition according to the present invention is fired by firing a composition containing zinc oxide as a main component and at least one metal oxide as a sub-component. A sintered body, the sintered body is a semiconductor portion that has been reduced to a semiconductor state,
An oxide layer is formed on the semiconductor portion in a layered manner with a predetermined thickness.

ここで、副成分としては、Bi,Sb,Mn,Co,N
i,Cr,Mg,AlおよびSiから選択された1種ま
たは種以上の金属の酸化物を挙げることができる。
Here, as an accessory component, Bi, Sb, Mn, Co, N
Mention may be made of oxides of one or more metals selected from i, Cr, Mg, Al and Si.

この電圧非直線磁器組成物は、酸化亜鉛を主成分とし、
副成分として少なくとも1種以上の金属酸化物を含有す
る上記組成物を所定形状に成型した後、還元性雰囲気中
において加熱して半導体化させ、次に酸化性雰囲気中に
おいて加熱して表面を酸化させることにより製造するこ
とができる。
This voltage non-linear porcelain composition is mainly composed of zinc oxide,
After molding the above composition containing at least one metal oxide as an accessory component into a predetermined shape, it is heated in a reducing atmosphere to become a semiconductor, and then heated in an oxidizing atmosphere to oxidize the surface. It can be manufactured by

ここで、還元性雰囲気中における加熱温度としては、1
100〜1300℃の範囲が好ましい。加熱温度が11
00℃未満では焼結が不充分になり、1300℃を越え
るとBiのような低融点の含成分が抜け、特性に
悪影響を及ぼすが、1100〜1300℃の範囲ではこ
のようなことがないからである。
Here, the heating temperature in the reducing atmosphere is 1
The range of 100-1300 degreeC is preferable. Heating temperature is 11
If the temperature is lower than 00 ° C, the sintering becomes insufficient, and if the temperature exceeds 1300 ° C, the low-melting point component such as Bi 2 O 3 is released, which adversely affects the characteristics. Because there is no.

また、酸化性雰囲気中における加熱温度としては600
〜750℃の範囲が好ましい。加熱温度が600℃未満
ではバリスタ電圧Vが低くなり過ぎたり、非直線係数α
が小さくなり過ぎ、また750℃を越えるとバリスタ電
圧Vが高くなり過ぎるが、600〜750℃の範囲では
バリスタ電圧Vや非直線係数αが適当な値になるからで
ある。
The heating temperature in the oxidizing atmosphere is 600.
The range of ~ 750 ° C is preferred. If the heating temperature is less than 600 ° C, the varistor voltage V becomes too low, and the nonlinear coefficient α
Is too small, and the varistor voltage V becomes too high when the temperature exceeds 750 ° C., but the varistor voltage V and the nonlinear coefficient α become appropriate values in the range of 600 to 750 ° C.

また、この電圧非直線磁器組成物は、酸化亜鉛を主成分
とし、副成分として少なくとも1種以上の金属酸化物を
含有する上記組成物を所定形状に成型した後、酸化性雰
囲気中において加熱して酸化させ、次に還元性雰囲気中
において加熱して還元させ、次に酸化性雰囲気中におい
て加熱して表面を再酸化させることによっても製造する
ことができる。
In addition, this voltage nonlinear porcelain composition is formed by molding the above composition containing zinc oxide as a main component and at least one metal oxide as an accessory component into a predetermined shape, and then heating the composition in an oxidizing atmosphere. It is also possible to oxidize the surface, then heat in a reducing atmosphere to reduce it, and then heat in an oxidizing atmosphere to re-oxidize the surface.

ここで、先の酸化性雰囲気中における加熱温度として
は、1100〜1300℃の範囲が好ましい。加熱温度
が1100℃未満では焼結が不充分になり、1300℃
を越えるとBiのような低融点の副成分が抜け、
特性に悪影響を及ぼすが、1100〜1300℃の範囲
ではこのようなことがないからである。
Here, the heating temperature in the oxidizing atmosphere is preferably in the range of 1100 to 1300 ° C. If the heating temperature is less than 1100 ° C, sintering will be insufficient and the temperature will be 1300 ° C.
If it exceeds, the low-melting-point subcomponents such as Bi 2 O 3 will escape,
This is because the characteristics are adversely affected, but such a phenomenon does not occur in the range of 1100 to 1300 ° C.

また、還元性雰囲気中における加熱温度としては700
〜1100℃の範囲が好ましい。加熱温度が700℃未
満では還元が不充分で、完全にバリスタ特性を除くこと
ができず、1100℃を越えると粒子成長が進み初期の
特性が悪くなるが、700〜1100℃の範囲ではこの
ようなことがないからである。
The heating temperature in the reducing atmosphere is 700
The range of ˜1100 ° C. is preferred. If the heating temperature is lower than 700 ° C, the reduction is insufficient and the varistor characteristics cannot be completely removed. If the heating temperature exceeds 1100 ° C, particle growth proceeds and the initial characteristics deteriorate, but in the range of 700 to 1100 ° C, Because there is no such thing.

更に、後の酸化性雰囲気中における加熱温度としては6
00〜750℃の範囲が好ましい。加熱温度が600℃
未満ではバリスタ電圧Vが低くなり過ぎたり、非直線係
数αが小さくなり過ぎ、また750℃を越えるとバリス
タ電圧Vが高くなり過ぎるが、600〜750℃の範囲
ではバリスタ電圧Vや非直線係数αが適当な値になるか
らである。
Further, the heating temperature in the later oxidizing atmosphere is 6
The range of 00 to 750 ° C is preferable. Heating temperature is 600 ℃
If the temperature is less than 1, the varistor voltage V becomes too low, or the nonlinear coefficient α becomes too small, and if it exceeds 750 ° C, the varistor voltage V becomes too high, but in the range of 600 to 750 ° C, the varistor voltage V and the nonlinear coefficient α become too small. Is an appropriate value.

[実施例] 実験1 ZnO粉末にBi,Sb,Mn,Co,Ni,Cr,M
g,AlまたはSiから選択された元素の酸化物を、第
1表の試料No3,15,27に示す割合で添加し、これ
らを充分に混合した後、720℃で2時間仮焼した。
[Examples] Experiment 1 Bi, Sb, Mn, Co, Ni, Cr, M was added to ZnO powder.
Oxides of elements selected from g, Al or Si were added in the proportions shown in Sample Nos. 3, 15 and 27 in Table 1, mixed well, and then calcined at 720 ° C. for 2 hours.

次に、この仮焼して得られたものを充分に粉砕し、この
粉砕したものを金型で成型して、外径12.25mm、
内径7.75mmのリング状の成形体を複数個製造し
た。
Next, the product obtained by the calcination is sufficiently crushed, and the crushed product is molded with a mold to obtain an outer diameter of 12.25 mm,
A plurality of ring-shaped compacts having an inner diameter of 7.75 mm were manufactured.

次に、このリング状の成形体をH2.0%+N98
%の還元性雰囲気中において、1150℃で2時間焼成
し、その後、空気中において650℃で酸化焼成した。
Next, this ring-shaped molded body was subjected to H 2 2.0% + N 2 98
% Reducing atmosphere at 1150 ° C. for 2 hours followed by oxidative baking at 650 ° C. in air.

次に、この酸化焼成したものに銀電極を各々焼き付けて
バリスタを形成し、25℃におけるバリスタ電圧V10mA
と、非直線係数αを求めた。
Next, a silver electrode is baked on each of the oxide-fired products to form a varistor, and the varistor voltage at 25 ° C. is V 10 mA.
Then, the nonlinear coefficient α was obtained.

結果は第1表に示す通りとなった。The results are shown in Table 1.

実験2 次に、添加成分を第1表の試料No37,38,39に示
すようにしたこと、および成形体を酸化性雰囲気中にお
いて加熱温度1150℃で1回だけ加熱して酸化焼成し
たこと以外は実験1と同様にして従来例としてのバリス
タを形成し、25℃におけるバリスタ電圧V10mAと、非
直線係数αを求めた。
Experiment 2 Next, except that the additive components were set as shown in Sample Nos. 37, 38 and 39 of Table 1 and that the molded body was heated and oxidized once at a heating temperature of 1150 ° C. in an oxidizing atmosphere. A varistor as a conventional example was formed in the same manner as in Experiment 1, and the varistor voltage V 10 mA at 25 ° C. and the nonlinear coefficient α were obtained.

結果は第1表に示す通りとなった。The results are shown in Table 1.

実験1によれば、バリスタ電圧V10mAは5〜35Vとな
った。これは実験2の結果、すなわち従来例と比較して
大巾に低下していることがわかる。
According to Experiment 1, the varistor voltage V 10mA was 5 to 35V. It can be seen that this is much lower than the result of Experiment 2, that is, the conventional example.

実験1のバリスタ電圧V10mAが、実験2のバリスタ電圧
10mAよりも大幅に低くなったのは、実験2で得られた
電圧非直線磁器組成物がBL構造になっているのに対し
て、実験1で得られた電圧非直線磁器組成物が表面再酸
化型の構造になっているためと考えられる。
The varistor voltage V 10mA in Experiment 1 was significantly lower than the varistor voltage V 10mA in Experiment 2, while the voltage nonlinear ceramic composition obtained in Experiment 2 had a BL structure. It is considered that this is because the voltage nonlinear ceramic composition obtained in Experiment 1 has a surface reoxidation type structure.

実験3 次に、第2表の試料No1〜6,13〜18,25〜30
に示す組成の成形体を空気中において550〜800℃
の範囲で酸化焼成した以外は実験1と同様にして、25
℃におけるバリスタ電圧V10mAと、非直線係数αを求め
た。
Experiment 3 Next, sample Nos. 1 to 6, 13 to 18, 25 to 30 in Table 2
The molded product having the composition shown in 550 to 800 ° C. in air
The same as Experiment 1 except that the calcination was performed in the range of 25.
The varistor voltage V at 10 ° C. and the nonlinear coefficient α were determined.

結果は第2表に示す通りとなった。The results are shown in Table 2.

実験3の結果から、空気中における酸化焼成において、
加熱温度が550℃では、バリスタ電圧V10mAが0.1
〜0.5V程度、非直線係数αも1程度となって、満足
できる電気的特性のものは得られなかった。
From the results of Experiment 3, in oxidation firing in air,
When the heating temperature is 550 ° C, the varistor voltage V 10mA is 0.1
.About.0.5 V and the non-linear coefficient .alpha. Were also about 1, and satisfactory electrical characteristics could not be obtained.

また、空気中における酸化焼成において、加熱温度が8
00℃では、バリスタ電圧V10mAが300V付近と高く
なり過ぎ、満足できる電気的特性のものは得られなかっ
た。
In addition, the heating temperature is 8 during oxidation firing in air.
At 00 ° C., the varistor voltage V 10 mA became too high around 300 V, and satisfactory electrical characteristics could not be obtained.

従って、空気中における酸化焼成において、加熱温度は
600〜750℃の範囲が好ましい。
Therefore, in the oxidation firing in air, the heating temperature is preferably in the range of 600 to 750 ° C.

実験4 第3表の試料No7〜12,19〜24,31〜36に示
す組成の成形体を先に酸化性雰囲気中において1150
℃で加熱して酸化焼成した以外は実験1と同様にして電
圧非直線磁器組成物を形成し、この電圧非直線磁器組成
物の25℃におけるバリスタ電圧と非直線係数αを求め
た。
Experiment 4 The molded bodies having the compositions shown in Sample Nos. 7 to 12, 19 to 24, and 31 to 36 in Table 3 were first subjected to 1150 in an oxidizing atmosphere.
A voltage nonlinear porcelain composition was formed in the same manner as in Experiment 1 except that the voltage nonlinear porcelain composition was heated and oxidatively baked at 25 ° C., and the varistor voltage at 25 ° C. and the nonlinear coefficient α of this voltage nonlinear porcelain composition were determined.

結果は第3表に示す通りとなった。The results are shown in Table 3.

上記の結果は、実験1および実験3とほぼ同等になって
おり、成形体を還元焼成させる前にあらかじめ酸化させ
ておいても同様の結果が得られることがわかる。
The above results are almost the same as those in Experiment 1 and Experiment 3, and it can be seen that similar results can be obtained even if the molded body is previously oxidized before being reduced and baked.

[発明の効果] 本発明によれば、コストの安い酸化亜鉛系の材料を使用
して、バリスタ電圧の低い電圧非直線磁器組成物を得る
ことができるという効果がある。
[Advantages of the Invention] According to the present invention, it is possible to obtain a voltage nonlinear porcelain composition having a low varistor voltage by using a low-cost zinc oxide-based material.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】酸化亜鉛を主成分とし、副成分として少な
くとも1種以上の金属酸化物を含有する組成物を焼成し
てなる焼結体であって、この焼結体は、還元されて半導
体の状態にある半導体部と、この半導体部の上に所定の
厚さで被覆形成された酸化層とからなる電圧非直線磁器
組成物。
1. A sintered body obtained by firing a composition containing zinc oxide as a main component and at least one metal oxide as an accessory component, the sintered body being reduced to give a semiconductor. 1. A voltage non-linear porcelain composition comprising a semiconductor portion in the above state and an oxide layer coated on the semiconductor portion to a predetermined thickness.
【請求項2】酸化亜鉛を主成分とし、副成分として少な
くとも1種以上の金属酸化物を含有する組成物を、還元
性雰囲気中において加熱して半導体化させ、次に酸化性
雰囲気中において加熱して表面を酸化させることを特徴
とする電圧非直線磁器組成物の製造方法。
2. A composition containing zinc oxide as a main component and at least one metal oxide as a subcomponent, is heated in a reducing atmosphere to be a semiconductor, and is then heated in an oxidizing atmosphere. A method for producing a voltage non-linear porcelain composition, characterized by oxidizing the surface of the composition.
【請求項3】酸化亜鉛を主成分とし、副成分として少な
くとも1種以上の金属酸化物を含有する組成物を、酸化
性雰囲気中において加熱して酸化させ、次に、還元性雰
囲気中において加熱して半導体化させ、次に酸化性雰囲
気中において加熱して表面を再酸化させることを特徴と
する電圧非直線磁器組成物の製造方法。
3. A composition containing zinc oxide as a main component and at least one metal oxide as a secondary component is heated in an oxidizing atmosphere to be oxidized, and then heated in a reducing atmosphere. To semiconductor, and then heating in an oxidizing atmosphere to reoxidize the surface, a method for producing a voltage nonlinear porcelain composition.
JP2076770A 1990-03-28 1990-03-28 Voltage nonlinear porcelain composition and method for producing the same Expired - Fee Related JPH0648642B2 (en)

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Publication Number Publication Date
JPH03278402A JPH03278402A (en) 1991-12-10
JPH0648642B2 true JPH0648642B2 (en) 1994-06-22

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JP5830715B2 (en) * 2010-03-17 2015-12-09 パナソニックIpマネジメント株式会社 Multilayer varistor and manufacturing method thereof

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