JPH0652651B2 - Micro processing equipment - Google Patents
Micro processing equipmentInfo
- Publication number
- JPH0652651B2 JPH0652651B2 JP60247088A JP24708885A JPH0652651B2 JP H0652651 B2 JPH0652651 B2 JP H0652651B2 JP 60247088 A JP60247088 A JP 60247088A JP 24708885 A JP24708885 A JP 24708885A JP H0652651 B2 JPH0652651 B2 JP H0652651B2
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- constant
- ion source
- electrode
- processing equipment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Welding Or Cutting Using Electron Beams (AREA)
- Electron Sources, Ion Sources (AREA)
Description
【発明の詳細な説明】 〔発明の利用分野〕 本発明は微細加工装置に係り、特に、イオンビームを利
用した高精度の加工に好適な微細加工装置に関する。Description: FIELD OF THE INVENTION The present invention relates to a microfabrication device, and more particularly to a microfabrication device suitable for highly accurate machining using an ion beam.
イオンビームを利用した従来の微細加工装置は、矢板：
アイオニクス，ｐ６（1981年８月号）に示すように、ガ
ス圧の精密な制御で加工精度を維持しているが、真空容
器の圧力は、スパツタされてできた薄膜のポンプ作用や
反応性ガスを使用した時の化学反応等で変動しやすく、
また、プラズマ部分の圧力がイオンビームの出力に直接
影響を与える点、真空計の測定精度の経時変化等、誤差
となる要因を多く含んでおり問題がある。A conventional microfabrication device that uses an ion beam is a sheet pile:
As shown in Ionics, p6 (August 1981 issue), the processing precision is maintained by precise control of the gas pressure, but the pressure of the vacuum container is the pumping action and reactivity of the thin film formed by sputtering. It is easy to change due to chemical reaction etc. when using gas,
In addition, there are many factors that cause errors, such as the pressure of the plasma portion directly affecting the output of the ion beam and the change in the measurement accuracy of the vacuum gauge over time, which is problematic.
本発明の目的は、イオン源内のガス圧力等が変動して
も、イオンビームの発散角を最小に維持でき、これによ
り加工精度が維持できる微細加工装置を提供するにあ
る。An object of the present invention is to provide a fine processing apparatus capable of maintaining a minimum divergence angle of an ion beam even when the gas pressure in the ion source fluctuates, thereby maintaining processing accuracy.
本発明者はイオンビームの最小の発散角が、イオン源の
ガス圧が変化しても、加速電流を一定に維持することで
保たれることを実験により確認し、イオン源の加速電流
を検出する手段と、この加速電流の検出信号によりイオ
ン源のアーク電力を制御し、加速電流が一定になるよう
にする手段とを備えていることを特徴とする。The inventor has confirmed by experiments that the minimum divergence angle of the ion beam can be maintained by maintaining the accelerating current constant even if the gas pressure of the ion source changes, and detects the accelerating current of the ion source. And a means for controlling the arc power of the ion source by the detection signal of the acceleration current so that the acceleration current becomes constant.
以下、本発明の一実施例を第１図と第２図により説明す
る。該図において、フイラメント電源より、タングステ
ンフイラメント１を必要な熱電子が出る温度に加熱し、
アークのカソードとして使用する。プラズマ発生容器２
をアノードとして、アーク電源によりアルゴン等の中性
ガス５を、ガス口４より導入し、１０-1Ｐａ程度のガス
圧で放電させ、多数の永久磁石３により、発生したプラ
ズマを閉じ込めている。ビーム引き出し電極系６はイオ
ンビームをプラズマより引き出す直径１００mmの範囲に
直径４mmの穴が４００個程度の穴のあいた板厚１mmの３
枚の電極でできており、プラズマに近い順に、加速電
極、電子抑制電極、接地電極と呼び電極間隔はそれぞれ
0.5mmと１mmである。加速電極は加速電源より一定の加
速電圧を印加する。加速電極に流れる加速電流を検出す
る手段として、シヤント抵抗７を設ける。電子抑制電極
は電子抑制電源に接続され、上記のイオンビームに逆流
する電子を抑制する。シヤント抵抗７の信号と、基準電
圧を比較し、アーク電力を制御するための制御器８は第
２図に示すように、演算増巾器を利用した比較回路によ
り、基準電圧との誤差信号を制御信号として使用し、フ
イラメント電源の出力電流を制御することで、フイラメ
ントの温度を制御し、アーク電源のアーク電流を制御す
ることにより、加速電流を一定になるように制御する。
微細加工装置として、２〜３時間程度の運転を考える
と、最も困難な制御は、プラズマ発生容器２の部分での
圧力の制御である。従来は、中性ガス５の流量を一定に
コントロールしていたが、イオンビームのスパッタによ
りできる薄膜の真空排気作用等により、真空排気能力が
違うため、中性ガス５の流量を一定に保持しても、プラ
ズマ発生容器２でのガス圧力が変動する。アーク電力を
一定に制御しても、プラズマ密度が変動するので、加速
電極を通過するイオンビームの量である加速電流が変動
する。イオンビームの発散角とは、イオンビームの方向
のばらつきの程度を示す量で、大きいと加工精度が低下
する。第３図は、イオンビームの発散角が最小となる加
速電流を、引き出し電圧（加速電極と電子抑制電極の電
位差）との関係でまとめたもので、一定の引き出し電圧
のもとでは、プラズマ発生容器２のガス圧が２倍程度変
化してもガス圧によらず、加速電流を一定に保つこと
で、発散角最小の条件を保持できることを示している。
すなわち、最も加工精度の良い状態を長時間ガス圧等の
変動に左右されないで維持できる。また、イオンビーム
の量も正確に制御されているので、薄膜の加工に必要な
時間も正確である。An embodiment of the present invention will be described below with reference to FIGS. 1 and 2. In the figure, from the filament power supply, the tungsten filament 1 is heated to a temperature at which the necessary thermoelectrons are emitted,
Used as the cathode of the arc. Plasma generation container 2
As an anode, a neutral gas 5 such as argon is introduced from a gas port 4 by an arc power source and discharged at a gas pressure of about 10 -1 Pa, and a large number of permanent magnets 3 confine the generated plasma. The beam extraction electrode system 6 has a plate thickness of 1 mm, which has about 400 holes with a diameter of 4 mm and a diameter of 100 mm for extracting an ion beam from plasma.
It consists of a sheet of electrodes, and the spacing between the accelerating electrode, the electron suppression electrode, the ground electrode, and the nominal electrode is in the order of proximity to the plasma.
0.5mm and 1mm. The accelerating electrode applies a constant accelerating voltage from the accelerating power source. A shunt resistor 7 is provided as a means for detecting the acceleration current flowing through the acceleration electrode. The electron suppression electrode is connected to an electron suppression power supply and suppresses the electrons flowing back into the ion beam. As shown in FIG. 2, the controller 8 for comparing the signal of the shunt resistor 7 with the reference voltage and controlling the arc power, the error signal with the reference voltage is detected by the comparison circuit using the operational amplifier. It is used as a control signal to control the output current of the filament power supply to control the temperature of the filament power supply and to control the arc current of the arc power supply to control the acceleration current to be constant.
Considering the operation of the fine processing apparatus for about 2 to 3 hours, the most difficult control is the control of the pressure in the plasma generation container 2. In the past, the flow rate of the neutral gas 5 was controlled to be constant, but since the vacuum pumping ability of the thin film formed by ion beam sputtering has a different vacuum pumping ability, the flow rate of the neutral gas 5 is kept constant. However, the gas pressure in the plasma generation container 2 fluctuates. Even if the arc power is controlled to be constant, the plasma density fluctuates, so that the accelerating current, which is the amount of the ion beam passing through the accelerating electrode, fluctuates. The divergence angle of the ion beam is an amount showing the degree of variation in the direction of the ion beam, and if it is large, the processing accuracy is lowered. FIG. 3 summarizes the acceleration current that minimizes the divergence angle of the ion beam in relation to the extraction voltage (potential difference between the acceleration electrode and the electron suppression electrode). Under a constant extraction voltage, plasma generation occurs. It is shown that even if the gas pressure in the container 2 changes by a factor of two, the condition of minimum divergence angle can be maintained by keeping the acceleration current constant regardless of the gas pressure.
That is, the state with the best processing accuracy can be maintained for a long time without being affected by fluctuations in gas pressure and the like. Moreover, since the amount of the ion beam is accurately controlled, the time required for processing the thin film is also accurate.
以上説明した本発明によれば、イオン源内のガス圧力が
変動しても、加速電流を一定に制御することでビームの
発散角を最小に維持するとともに、ビーム量を一定に維
持できるので、加工形状、加工時間が正確になり、イオ
ンビームによる高精度の微細加工を行う効果がある。According to the present invention described above, even if the gas pressure in the ion source fluctuates, the divergence angle of the beam can be kept to a minimum and the beam amount can be kept constant by controlling the accelerating current to be constant. The shape and processing time are accurate, and there is an effect that high-precision fine processing by an ion beam is performed.
第１図は本発明の一実施例を示す全体構成図、第２図は
本発明の一部結線図、第３図は引き出し電圧とイオンビ
ームの発散角が最小となる時の加速電流との関係を示す
特性図である。 １…タングステンフイラメント、２…プラズマ発生容
器、３…永久磁石、４…ガス口、５…中性ガス、６…ビ
ーム引き出し電極系、７…シヤント抵抗、８…制御器。FIG. 1 is an overall configuration diagram showing an embodiment of the present invention, FIG. 2 is a partial connection diagram of the present invention, and FIG. 3 shows an extraction voltage and an acceleration current when the divergence angle of an ion beam is minimum. It is a characteristic view which shows a relationship. DESCRIPTION OF SYMBOLS 1 ... Tungsten filament, 2 ... Plasma generation container, 3 ... Permanent magnet, 4 ... Gas port, 5 ... Neutral gas, 6 ... Beam extraction electrode system, 7 ... Shunt resistance, 8 ... Controller.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 橋本 勲 茨城県日立市国分町１丁目１番１号 株式 会社日立製作所国分工場内 (72)発明者 門岡 英志 茨城県日立市国分町１丁目１番１号 株式 会社日立製作所国分工場内 (56)参考文献 特開 昭57−130358（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Isao Hashimoto 1-1-1, Kokubun-cho, Hitachi-shi, Ibaraki Hitachi Kokubun factory (72) Inventor Hideshi Kadooka 1-1-1-1, Kokubun-cho, Hitachi, Ibaraki No. 1 inside the Kokubun factory of Hitachi, Ltd. (56) Reference JP-A-57-130358 (JP, A)
Claims (1)
た微細加工装置において、前記イオン源の加速電流を検
出する手段と、前記イオン源の加速電流の検出信号によ
りイオン源のアーク電力を制御し、前記加速電流が一定
になるようにする手段とを備えていることを特徴とする
微細加工装置。1. A microfabrication apparatus equipped with an ion source for generating a shower beam, wherein means for detecting an acceleration current of the ion source and arc power of the ion source are controlled by a detection signal of the acceleration current of the ion source. And a means for keeping the acceleration current constant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60247088A JPH0652651B2 (en) | 1985-11-06 | 1985-11-06 | Micro processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60247088A JPH0652651B2 (en) | 1985-11-06 | 1985-11-06 | Micro processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62108440A JPS62108440A (en) | 1987-05-19 |
| JPH0652651B2 true JPH0652651B2 (en) | 1994-07-06 |
Family
ID=17158245
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60247088A Expired - Fee Related JPH0652651B2 (en) | 1985-11-06 | 1985-11-06 | Micro processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0652651B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01302645A (en) * | 1988-02-08 | 1989-12-06 | Anelva Corp | Discharging device |
| JP2656542B2 (en) * | 1988-05-23 | 1997-09-24 | 株式会社日立製作所 | Ion beam processing equipment |
| JPH0668827A (en) * | 1992-08-20 | 1994-03-11 | Hitachi Ltd | Ion beam generator and control method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57130358A (en) * | 1981-02-05 | 1982-08-12 | Nippon Telegr & Teleph Corp <Ntt> | Full automatic ion implantation device |
-
1985
- 1985-11-06 JP JP60247088A patent/JPH0652651B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62108440A (en) | 1987-05-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |