JPH0654271B2 - Semiconductor pressure sensor - Google Patents
Semiconductor pressure sensorInfo
- Publication number
- JPH0654271B2 JPH0654271B2 JP6649985A JP6649985A JPH0654271B2 JP H0654271 B2 JPH0654271 B2 JP H0654271B2 JP 6649985 A JP6649985 A JP 6649985A JP 6649985 A JP6649985 A JP 6649985A JP H0654271 B2 JPH0654271 B2 JP H0654271B2
- Authority
- JP
- Japan
- Prior art keywords
- lock portion
- strain gauge
- pressure sensor
- plastic housing
- semiconductor pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Description
【発明の詳細な説明】 〔発明の利用分野〕 本発明は、例えば、自動車用エンジンマニホールド圧検
知器として好適な半導体圧力センサの改良に関するもの
である。Description: FIELD OF THE INVENTION The present invention relates to an improvement of a semiconductor pressure sensor suitable as, for example, an automobile engine manifold pressure detector.
この種半導体圧力センサに関連し特開昭55−103438が
知られている。第3図は従来の半導体圧力センサの断面
図、第4図は第3図のコネクタ部及びロツク部の付近の
底面図である。図において、1は半導体歪ゲージ、2は
プラスチツクハウジング、3は厚膜回路基板、4はプラ
スチツクハウジング2に設けられた大気導入穴、5はコ
ネクタ部、6は歪ゲージ1収納部のキヤツプ、7は直差
しコネクタ部のロツク部でありコネクタ部5と共にプラ
スチツクハウジングと一体成形により突出形成されてい
る。8は歪ゲージ1の収納部をプラスチツクハウジング
2に固定した接着剤、9はチツプ増幅器(CCBチツ
プ)、10はチツプコンデンサ、11は接続用パツトで
それぞれはんだ12により厚膜回路基板3に接続され、
厚膜回路基板3は接着剤8によりプラスチツクハウジン
グ2に固定されている。JP-A-55-103438 is known in relation to this type of semiconductor pressure sensor. FIG. 3 is a sectional view of a conventional semiconductor pressure sensor, and FIG. 4 is a bottom view of the vicinity of the connector portion and the lock portion of FIG. In the figure, 1 is a semiconductor strain gauge, 2 is a plastic housing, 3 is a thick film circuit board, 4 is an air introduction hole provided in the plastic housing 2, 5 is a connector portion, 6 is a cap of the strain gauge 1 housing portion, 7 Is a lock portion of the direct insertion connector portion, and is formed by projecting integrally with the plastic housing together with the connector portion 5. 8 is an adhesive for fixing the storage portion of the strain gauge 1 to the plastic housing 2, 9 is a chip amplifier (CCB chip), 10 is a chip capacitor, 11 is a connecting pad, and each is connected to the thick film circuit board 3 by the solder 12. ,
The thick film circuit board 3 is fixed to the plastic housing 2 with an adhesive 8.
13はキヤツプ6の大気導通穴、14は歪ゲージ1と接
続用パツト11とを接続するニツケル線、15は厚膜回
路基板3上の接続パツド11、チツプコンデンサ10及
びCCBチツプ9等の電子部品を覆い保護するために注
入された樹脂である。16はターミナル端子で、ほぼ長
円形断面を有して突出されたコネクタ部5内に一端側を
突出され他端側は、プラスチツクハウジング2の成形時
にプラスチツクハウジング2内部に突出成形され、プラ
スチツクハウジング2内で厚膜回路基板3にはんだ付接
続されたリードフレーム17と樹脂15上面の空間20
でスポツト溶接により電気的に接続されている。18は
歪ゲージ1に対する圧力導入管、21は蓋である。Reference numeral 13 is an atmosphere-conducting hole of the cap 6, 14 is a nickel wire for connecting the strain gauge 1 and the connecting pad 11, and 15 is an electronic component such as a connecting pad 11, a chip capacitor 10 and a CCB chip 9 on the thick film circuit board 3. Resin injected to cover and protect the. Reference numeral 16 denotes a terminal terminal, one end side of which is projected into the connector portion 5 having a substantially oval cross section and the other end side of which is projected and molded into the plastic housing 2 when the plastic housing 2 is molded. Space 20 on the upper surface of the lead frame 17 and the resin 15 which are soldered to the thick film circuit board 3 inside
It is electrically connected by spot welding. Reference numeral 18 is a pressure introducing pipe for the strain gauge 1, and 21 is a lid.
そして、圧力導入管18から圧力P1が印加されると、
圧力P1は歪ゲージ1に歪を生じ電流に変化され、即
ち、圧力P1は電気信号に変換され、この電気信号はニ
ツケル線14にて厚膜回路基板3に伝えられCCBチツ
プ9にて増幅され、その信号はリードフレーム17、タ
ーミナル端子16を経て外部へ取り出されコントロール
ユニツト等へ伝達される。そして、ロツク部7の凸出部
は相手の凹部(図示せず)に嵌合固着されるようになつ
ており、コネクタ部5にはおすカプラーが挿入されるよ
うになつている。Then, when the pressure P 1 is applied from the pressure introducing pipe 18,
The pressure P 1 causes strain in the strain gauge 1 and is changed into an electric current, that is, the pressure P 1 is converted into an electric signal, and this electric signal is transmitted to the thick film circuit board 3 by the nickel wire 14 and is transmitted by the CCB chip 9. The amplified signal is taken out through the lead frame 17 and the terminal terminal 16 and transmitted to the control unit or the like. The protruding portion of the lock portion 7 is adapted to be fitted and fixed to a mating concave portion (not shown), and the male coupler is to be inserted into the connector portion 5.
上記の構造において、ロツク部7に大気導入穴4を設け
ており、大気導入穴4は、大気圧を基準とする相対圧形
歪ゲージ1を採用しているため、絶対不可欠の構造であ
る。そして、コネクタ部5は電気的導通部分が長円形の
コネクタ部5の凸出部分で覆われ防水性を有している
が、ロツク部7に設けた大気導入穴4は防水性を有して
いないため、走行中等の場合に直接水圧が加えられ水の
浸入があり、ターミナル端子16及びリードフレーム1
7の接続部が空間20内に露出しており、圧力センサ内
部、即ち、厚膜回路基板3に電蝕が発生する欠点があ
る。尚、大気導入穴に水滴が入りセンサ内部に浸入する
欠点は、耐水試験、JISDO203、SI×30分を
行なうことで明らかである。In the above structure, the lock portion 7 is provided with the air introduction hole 4, and the air introduction hole 4 is an absolutely indispensable structure because the relative pressure type strain gauge 1 based on the atmospheric pressure is adopted. The electrically conductive portion of the connector portion 5 is covered with the protruding portion of the oval connector portion 5 and is waterproof, but the atmosphere introducing hole 4 provided in the lock portion 7 is waterproof. Since water does not enter because water pressure is directly applied when running, etc., the terminal terminal 16 and the lead frame 1
The connecting portion 7 is exposed in the space 20, and there is a drawback that electrolytic corrosion occurs inside the pressure sensor, that is, in the thick film circuit board 3. The defect that water drops enter the air introduction hole and enter the inside of the sensor is apparent by conducting a water resistance test, JIS DO203, SI × 30 minutes.
本発明は上記の状況に鑑みなされたものであり、センサ
内部に水の浸入することなく耐水性を向上できると共に
取付場所の自由度が高められる半導体圧力センサを提供
することを目的としたものである。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a semiconductor pressure sensor that can improve the water resistance without entering water into the sensor and can increase the degree of freedom of the mounting location. is there.
本発明の半導体圧力センサは、外部からの圧力を電気信
号に変換する半導体歪ゲージと、該歪ゲージの出力を増
幅するチツプ増幅器並びにチツプコンデンサを取り付け
上面を樹脂で被覆された混成厚膜回路基板及び上記歪ゲ
ージを内蔵し該樹脂及び上記歪ゲージ上面に空間が形成
され蓋で覆われたプラスチツクハウジングと、該プラス
チツクハウジングに固着し突設され外部に対し電気的に
接続されるターミナル端子を内蔵する直差しコネクタ部
及びロツク部と、該ロツク部の内側に設けられ上記空間
と連通し上記歪ゲージの基準圧を形成する大気導入穴と
を設けてなり、上記ロツク部の突出高さ方向に上記大気
導入穴の周囲を該ロツク部と共に囲むように防水用壁を
設けたものである。The semiconductor pressure sensor of the present invention is a hybrid thick film circuit board in which a semiconductor strain gauge for converting an external pressure into an electric signal, a chip amplifier for amplifying the output of the strain gauge, and a chip capacitor are attached and the upper surface is covered with a resin. And a plastic housing in which the above-mentioned strain gauge is built-in and a space is formed on the upper surface of the resin and the above-mentioned strain gauge and which is covered with a lid, and a terminal terminal which is fixedly secured to the plastic housing and is projected and electrically connected to the outside. A direct insertion connector portion and a lock portion, and an atmosphere introduction hole that is provided inside the lock portion and communicates with the space to form a reference pressure of the strain gauge, and is provided in a protruding height direction of the lock portion. A waterproof wall is provided so as to surround the atmosphere introducing hole together with the lock portion.
以下本発明の半導体圧力センサを実施例を用い従来と同
部品は同符号で示し同部分の構造の説明は省略し第1
図,第2図により説明する。第1図は第3図のコネクタ
部及びロツク部と同部分付近の底面図、第2図は第1図
の正面図である。図において、1は防水用壁であり、プ
ラスチツクハウジング2に突出形成されたコネクタ部5
の全周にロツク部7と共に大気導入穴4の周囲を囲むよ
うに、ロツク部7と同じ高さにプラスチツクハウジング
2と一体成形により形成されている。従つて、大気導入
穴4が防水用壁19で1個の端面側は開口されているが
その他の全周は覆われているので、直接水圧がかかるこ
とがなく大気導入穴4から空間20内への水の浸入を防
止できる。尚、コネクタ部5のほぼ全周に設けられた防
水用壁19はおすカプラーの着脱には全く支障がない。Hereinafter, the semiconductor pressure sensor of the present invention will be described with reference to the embodiments, the same parts as those of the conventional one will be denoted by the same reference numerals, and description of the structure of the same parts will be omitted.
This will be described with reference to FIGS. FIG. 1 is a bottom view of the vicinity of the connector part and the lock part of FIG. 3, and FIG. 2 is a front view of FIG. In the figure, reference numeral 1 denotes a waterproof wall, which is a connector portion 5 projectingly formed on the plastic housing 2.
Is formed integrally with the plastic housing 2 at the same height as the lock portion 7 so as to surround the entire circumference of the atmosphere introducing hole 4 together with the lock portion 7. Therefore, since one end face side of the air introduction hole 4 is opened by the waterproof wall 19 but the entire circumference is covered, the water is not directly applied to the space 20 from the air introduction hole 4. Water can be prevented from entering. The waterproof wall 19 provided almost all around the connector portion 5 does not interfere with the attachment and detachment of the male coupler.
このように本実施例の半導体圧力センサは、コネクタ部
の全周にロツク部と共に大気導入穴の周囲を囲むように
ロツク部と同じ高さの防水用壁をプラスチツクハウジン
グから一体成形により突設形成したので、大気導入穴に
直接水圧が加えられることを防止でき、従つて、センサ
内に水の浸入を防ぐことができるので、厚膜混成回路に
電蝕の発生することを防止でき耐環境性、特に耐水性に
すぐれ信頼性を向上できる。また、耐水性にすぐれてい
るため、エンジンルームに装着する場合も取付場所を狭
い範囲内に限定することなく、取付位置の自由度が向上
できる。As described above, in the semiconductor pressure sensor of the present embodiment, the waterproof wall having the same height as the lock portion is integrally formed on the entire circumference of the connector portion so as to surround the lock portion and the atmosphere introduction hole from the plastic housing. As a result, it is possible to prevent water pressure from being directly applied to the air introduction hole, and thus to prevent water from entering the sensor, preventing electrolytic corrosion from occurring in the thick film hybrid circuit, and making it environmentally resistant. In particular, it has excellent water resistance and can improve reliability. Further, since it is excellent in water resistance, even when it is mounted in the engine room, the degree of freedom of the mounting position can be improved without limiting the mounting place to a narrow range.
尚、上記実施例は、防水用壁19をコネクタ部の長円形
部の外側を囲むように設けた場合について述べたが、上
記長円形部の外側を囲まないでロツク部に対向する部分
のコネクタ部を利用し大気導入穴の周りを囲むように防
水用壁を設けても作用効果は同じである。In the above embodiment, the case where the waterproof wall 19 is provided so as to surround the outside of the oval portion of the connector portion has been described. However, the connector of the portion facing the lock portion without enclosing the outside of the elliptical portion is provided. Even if a waterproof wall is provided so as to surround the atmosphere introducing hole by using the above-mentioned part, the same operation and effect can be obtained.
以上記述した如く本発明の半導体圧力センサは、センサ
内部に水の浸入することなく耐水性を向上できると共に
取付場所の自由度を高めることができる効果を有するも
のである。As described above, the semiconductor pressure sensor of the present invention has an effect that the water resistance can be improved without the intrusion of water into the inside of the sensor and the degree of freedom of the mounting place can be increased.
第1図は本発明の半導体圧力センサの実施例であつて第
3図のコネクタ部及びロツク部と同部分付近の底面図、
第2図は第1図の正面図、第3図は従来の半導体圧力セ
ンサの断面図、第4図は第3図のコネクタ部及びロツク
部付近の底面図である。 1……歪ゲージ、2……プラスチツクハウジング、3…
…厚膜回路基板、5……コネクタ部、7……ロツク部、
9……チツプ増幅器、10……チツプコンデンサ、15
……樹脂、16……ターミナル端子、19……防水用
壁、20……空間、21……蓋。FIG. 1 is an embodiment of the semiconductor pressure sensor of the present invention, and is a bottom view of the vicinity of the connector portion and the lock portion of FIG.
2 is a front view of FIG. 1, FIG. 3 is a cross-sectional view of a conventional semiconductor pressure sensor, and FIG. 4 is a bottom view of the vicinity of the connector portion and the lock portion of FIG. 1 ... Strain gauge, 2 ... Plastic housing, 3 ...
… Thick film circuit board, 5 …… Connector part, 7 …… Lock part,
9: Chip amplifier, 10: Chip capacitor, 15
...... Resin, 16 ...... Terminal terminals, 19 ...... Waterproof wall, 20 ...... Space, 21 ...... Lid.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 山口 真一 茨城県勝田市東石川西古内3085番地5 日 立オートモテイブエンジニアリング株式会 社内 (56)参考文献 特開 昭55−103438(JP,A) 実開 昭59−47838(JP,U) 実開 昭61−122543(JP,U) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Shinichi Yamaguchi 3085 Higashiishikawa Nishikonai, Katsuta City, Ibaraki Prefecture 5 Ritsudoku Automotive Engineering Co., Ltd. (56) Reference JP-A-55-103438 (JP, A) Actual Open Sho 59-47838 (JP, U) Actual Open Sho 61-122543 (JP, U)
Claims (2)
体歪ゲージと、該歪ゲージの出力を増幅する増幅器を有
する混成厚膜回路基板及び上記歪ゲージを内蔵し上記歪
ゲージ上面に空間が形成され蓋で覆われたプラスチック
ハウジングと、該プラスチックハウジングに突設され外
部に対し電気的に接続されるターミナル端子を内蔵する
直差しコネクタ部及びロック部と、該ロック部の内側に
設けられ上記空間と連通し上記歪ゲージの基準圧を形成
する大気導入穴とを設けたものにおいて、上記ロック部
の突出高さ方向に上記大気導入穴の周囲を該ロック部と
共に囲むように防水用壁を設けたことを特徴とする半導
体圧力センサ。1. A mixed thick film circuit board having a semiconductor strain gauge for converting an external pressure into an electric signal, an amplifier for amplifying the output of the strain gauge, and the strain gauge built-in, and a space is provided on the upper surface of the strain gauge. A plastic housing formed and covered with a lid, a direct-insertion connector portion and a lock portion, which are provided in the plastic housing and projecting from the plastic housing and electrically connected to the outside, and a lock portion; In the one provided with an atmosphere introducing hole that communicates with the space and forms the reference pressure of the strain gauge, a waterproof wall is provided so as to surround the atmosphere introducing hole with the lock portion in the protruding height direction of the lock portion. A semiconductor pressure sensor characterized by being provided.
ロック部と共に上記コネクタ部の外周を包囲するように
形成されている特許請求の範囲第1項記載の半導体圧力
センサ。2. The semiconductor pressure sensor according to claim 1, wherein the waterproof wall is formed at the height of the lock portion so as to surround the outer periphery of the connector portion together with the lock portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6649985A JPH0654271B2 (en) | 1985-04-01 | 1985-04-01 | Semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6649985A JPH0654271B2 (en) | 1985-04-01 | 1985-04-01 | Semiconductor pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61226625A JPS61226625A (en) | 1986-10-08 |
| JPH0654271B2 true JPH0654271B2 (en) | 1994-07-20 |
Family
ID=13317569
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6649985A Expired - Lifetime JPH0654271B2 (en) | 1985-04-01 | 1985-04-01 | Semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0654271B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0238831A (en) * | 1988-07-28 | 1990-02-08 | Nec Corp | Stem for semiconductor |
| FR2795520B1 (en) * | 1999-06-24 | 2001-09-07 | Remy Kirchdoerffer | METHOD OF MANUFACTURING A DEVICE OF THE MEASURING OR DETECTION INSTRUMENT OR TYPE AND RESULTING DEVICES |
-
1985
- 1985-04-01 JP JP6649985A patent/JPH0654271B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61226625A (en) | 1986-10-08 |
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