JPH0656866B2 - Method for forming semiconductor element isolation region - Google Patents
Method for forming semiconductor element isolation regionInfo
- Publication number
- JPH0656866B2 JPH0656866B2 JP60253940A JP25394085A JPH0656866B2 JP H0656866 B2 JPH0656866 B2 JP H0656866B2 JP 60253940 A JP60253940 A JP 60253940A JP 25394085 A JP25394085 A JP 25394085A JP H0656866 B2 JPH0656866 B2 JP H0656866B2
- Authority
- JP
- Japan
- Prior art keywords
- element isolation
- film
- semiconductor element
- silicon oxide
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 30
- 238000002955 isolation Methods 0.000 title claims description 29
- 238000000034 method Methods 0.000 title claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 19
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 9
- 239000011347 resin Substances 0.000 claims description 9
- 229920005989 resin Polymers 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 150000003377 silicon compounds Chemical class 0.000 claims description 5
- 125000004432 carbon atom Chemical group C* 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 2
- 238000000926 separation method Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 150000002430 hydrocarbons Chemical group 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- 238000006864 oxidative decomposition reaction Methods 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Landscapes
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体装置の製造方法に関し、特に半導体装
置の素子間分離領域を形成する方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for forming an element isolation region of a semiconductor device.
集積回路装置の素子間分離の方法として、シリコン基板
表面に選択的に形成した溝に絶縁物を埋め込む方法、い
わゆるトレンチアイソレーション法がある。As a method of separating elements of an integrated circuit device, there is a method of burying an insulator in a groove selectively formed on the surface of a silicon substrate, that is, a so-called trench isolation method.
従来のトレンチアイソレーション形成方法としては、第
２図（ａ）に示すように、シリコン基板２０１の表面に
素子分離のための溝２０２，２０２′を形成し次に同図
（ｂ）に示すように、化学気相成長によるシリコン窒化
膜２０３を形成し、続いて同図（ｃ）に示すように化学
気相成長によるシリコン酸化膜２０４を形成後、同図
（ｄ）に示すようにリソグラフィー工程により溝上部の
みにフォトレジスト２０５，２０５′を残し、次にエッ
チング工程により同図（ｅ）に示すように基板凸部上の
シリコン酸化膜を除去することによって、凹部内に素子
分離シリコン酸化膜２０６，２０６′を埋込み最後に、
同図（ｆ）に示すように凸部上のシリコン窒化膜２０３
を除去することによって素子分離領域を形成する方法が
ある。As a conventional trench isolation forming method, as shown in FIG. 2 (a), trenches 202 and 202 'for element isolation are formed on the surface of a silicon substrate 201, and then as shown in FIG. 2 (b). Then, a silicon nitride film 203 is formed by chemical vapor deposition, a silicon oxide film 204 is formed by chemical vapor deposition as shown in FIG. 3C, and a lithography process is performed as shown in FIG. To leave the photoresists 205 and 205 'only in the upper part of the groove by etching, and then remove the silicon oxide film on the convex portion of the substrate by an etching process as shown in FIG. Embedding 206, 206 'Finally,
As shown in FIG. 6F, the silicon nitride film 203 on the convex portion
There is a method of forming an element isolation region by removing the.
また、同図（ａ），（ｂ）の工程の後に同図（ｇ）に示
すように化学気相成長により膜厚が溝の深さの約半分で
あるポリシリコン膜２０７を形成後、同図（ｈ）に示す
ように、溝上部のみにフォトレジスト２０８，２０８′
を残し、次にエッチング工程により同図（ｉ）に示すよ
うに基板凸部上のポリシリコン膜を除去し、続いて同図
（ｊ）に示すように溝内に埋込まれたポリシリコン膜２
０９，２０９′を酸化することによって、凹部内に素子
分離シリコン酸化膜２１０，２１０′を形成し、最後に
同図（ｋ）に示すように、シリコン窒化膜２０３を除去
することによって素子分離領域を形成する方法がある。After the steps shown in FIGS. 3A and 3B, a polysilicon film 207 having a film thickness of about half the depth of the groove is formed by chemical vapor deposition as shown in FIG. As shown in FIG. 3H, photoresists 208, 208 'are formed only on the upper portions of the grooves.
Then, the polysilicon film on the convex portion of the substrate is removed by an etching process as shown in FIG. 7I, and subsequently, the polysilicon film embedded in the trench as shown in FIG. Two
The element isolation silicon oxide films 210 and 210 'are formed in the recess by oxidizing the element isolation regions 09 and 209', and finally the silicon nitride film 203 is removed as shown in FIG. There is a method of forming.
しかしながら、従来法では化学気相成長によるシリコン
酸化膜又はポリシリコン膜の段差被覆性は悪く、さらに
リソグラフィー工程における目合せずれによって、第３
図に示すように溝の端部で突起状のシリコン酸化膜３０
２，３０２′が残ったり、シリコン酸化膜のへこみ３０
３，３０３′が形成される等の問題がある。However, in the conventional method, the step coverage of the silicon oxide film or the polysilicon film by the chemical vapor deposition is poor, and the third step is caused by the misalignment in the lithography process.
As shown in the figure, the protruding silicon oxide film 30 is formed at the end of the groove.
2, 302 'remains, or the silicon oxide film has a dent 30
There is a problem that 3,303 'is formed.
本発明の目的は、上記問題点を解消した、すなわち、リ
ソグラフィー工程を用いずに平坦性の良い半導体素子分
離領域を形成する方法を提供することにある。An object of the present invention is to solve the above problems, that is, to provide a method for forming a semiconductor element isolation region having good flatness without using a lithography process.
本発明の半導体素子分離領域の形成方法は、一般式がＲ
ｎ−Ｓｉ（ＯＲ′）４−ｎ（Ｒ：１価の炭化水素基、
Ｒ′：炭素数０〜４の炭化水素基、ｎ：０，１，２，
３）である有機シリコン化合物を主成分とする溶液を素
子間分離溝を有する半導体基板表面に塗布する工程と、
最初に１５０℃以下の温度で、続いて４５０℃以下の温
度でそれぞれ所定時間だけ少なくとも酸素を含む雰囲気
中で熱処理せしめることによって該溶液を樹脂ガラス膜
に変える工程と、続いて５００℃以上の温度で酸素雰囲
気中で熱処理し該樹脂ガラス膜を酸化分解しシリコン酸
化膜に変える工程と、エッチバックにより、半導体基板
表面の半導体素子間分離溝以外に存在するシリコン酸化
膜を除去する工程とを含むことを特徴とする。In the method of forming the semiconductor element isolation region of the present invention, the general formula is R
n -S i (OR ') 4 -n (R: 1 monovalent hydrocarbon group,
R ': a hydrocarbon group having 0 to 4 carbon atoms, n: 0, 1, 2,
3) A step of applying a solution containing an organic silicon compound as a main component to the surface of a semiconductor substrate having an element isolation groove,
First, a step of converting the solution into a resin glass film by heat-treating at a temperature of 150 ° C. or lower, then at a temperature of 450 ° C. or lower for a predetermined time in an atmosphere containing at least oxygen, and then at a temperature of 500 ° C. or higher. And a step of oxidizing and decomposing the resin glass film into a silicon oxide film in an oxygen atmosphere, and a step of removing the silicon oxide film existing on the surface of the semiconductor substrate other than the semiconductor element isolation trench by etching back. It is characterized by
上記の一般式がＲｎ−Ｓｉ（ＯＲ′）４−ｎ（Ｒ：１価
の炭化水素基、Ｒ′：炭素数０〜４の炭化水素基、ｎ：
０，１，２，３）である有機シリコン化合物を主成分と
する溶液は、例えばＣＨ３・Ｓｉ（ＯＨ）３，Ｃ２Ｈ５
−Ｓｉ（ＯＨ）３，Ｃ３Ｈ７−Ｓｉ（ＯＨ）３，Ｃ４Ｈ
９−Ｓｉ（ＯＨ）３， Ｃ６Ｈ５−Ｓｉ（ＯＨ）３，ＣＨ３−Ｓｉ（ＯＣＨ３）
３，ＣＨ３−Ｓｉ（ＯＣ２Ｈ５）３，ＣＨ３−Ｓｉ（Ｏ
Ｃ３Ｈ７）３，ＣＨ３−Ｓｉ（ＯＣ４Ｈ９）３，Ｃ２Ｈ
５−Ｓｉ（ＯＣＨ３）３，Ｃ２Ｈ５−Ｓｉ（ＯＣ
２Ｈ５）３，Ｃ２Ｈ５−Ｓｉ（ＯＣ３Ｈ７）３，Ｃ２Ｈ
５−Ｓｉ（ＯＣ４Ｈ９）３，Ｃ３Ｈ７−Ｓｉ（ＯＣ
Ｈ３）３，Ｃ３Ｈ７−Ｓｉ（ＯＣ２Ｈ５）３，Ｃ３Ｈ７
−Ｓｉ（ＯＣ３Ｈ７）３，Ｃ３Ｈ７−Ｓｉ（ＯＣ
４Ｈ９）３，Ｃ４Ｈ９−Ｓｉ（ＯＣＨ３）３，Ｃ４Ｈ９
−Ｓｉ（ＯＣ２Ｈ５）３，Ｃ４Ｈ９−Ｓｉ（ＯＣ
３Ｈ７）３，Ｃ４Ｈ９−Ｓｉ（ＯＣ４Ｈ９）３，Ｃ６Ｈ
５−Ｓｉ（ＯＣＨ３）３，Ｃ６Ｈ５−Ｓｉ（ＯＣ
２Ｈ５）３，Ｃ６Ｈ５−Ｓｉ（ＯＣ３Ｈ７）３，Ｃ６Ｈ
５−Ｓｉ（ＯＣ４Ｈ９）３等のうち少なくとも１種類以
上をエチルセロソルブアセテート，ブチルセロソルブア
セテートアルコール等の溶媒と混合することによって得
られる。これらの溶液を塗布し酸素雰囲気中で酸化分解
することによってシリコン酸化膜を形成する方法は、例
えば、応用物理学会講演予稿集、Ｐ３７５，３１Ｐ−Ｇ
−６（昭和６０年３月）にあるように（Ｃ６Ｈ５−Ｓｉ
Ｏ）ｎ膜を酸素雰囲気中で５５０℃で１２０分間酸化分
解することによって均一なＳｉＯ２膜が形成できること
により知られている。The above general formula R n -S i (OR ') 4-n (R: 1 monovalent hydrocarbon group, R': hydrocarbon group having 0-4 carbon atoms, n:
A solution containing an organosilicon compound of 0, 1, 2, 3) as a main component is, for example, CH 3 · S i (OH) 3 , C 2 H 5
-S i (OH) 3, C 3 H 7 -S i (OH) 3, C 4 H
9 -S i (OH) 3, C 6 H 5 -S i (OH) 3, CH 3 -S i (OCH 3)
3, CH 3 -S i (OC 2 H 5) 3, CH 3 -S i (O
C 3 H 7) 3, CH 3 -S i (OC 4 H 9) 3, C 2 H
5 -S i (OCH 3) 3 , C 2 H 5 -S i (OC
2 H 5) 3, C 2 H 5 -S i (OC 3 H 7) 3, C 2 H
5 -S i (OC 4 H 9 ) 3, C 3 H 7 -S i (OC
H 3) 3, C 3 H 7 -S i (OC 2 H 5) 3, C 3 H 7
-S i (OC 3 H 7) 3, C 3 H 7 -S i (OC
4 H 9) 3, C 4 H 9 -S i (OCH 3) 3, C 4 H 9
-S i (OC 2 H 5) 3, C 4 H 9 -S i (OC
3 H 7) 3, C 4 H 9 -S i (OC 4 H 9) 3, C 6 H
5 -S i (OCH 3) 3 , C 6 H 5 -S i (OC
2 H 5) 3, C 6 H 5 -S i (OC 3 H 7) 3, C 6 H
Ethyl cellosolve acetate at least one or more of such 5 -S i (OC 4 H 9 ) 3, obtained by mixing with a solvent such as butyl cellosolve acetate alcohol. A method for forming a silicon oxide film by applying these solutions and oxidatively decomposing them in an oxygen atmosphere is described in, for example, Proceedings of the Japan Society of Applied Physics, P375, 31P-G.
-6 as in (Showa March years 60) (C 6 H 5 -S i
O) uniform S i O 2 film by n film 120 min oxidative decomposition at 550 ° C. in an oxygen atmosphere has been known by can be formed.
さらに、上記の溶液中にリン、ホウ素原子を含む化合物
を混合せしめることによって、５００℃以上の熱処理に
おけるシリコン酸化膜のリフローの効果を高めることが
可能となる。Furthermore, by mixing a compound containing phosphorus and boron atoms into the above solution, it becomes possible to enhance the effect of reflowing the silicon oxide film in the heat treatment at 500 ° C. or higher.
次に、本発明を実施例に基づき図面を用いて説明する。 Next, the present invention will be described based on embodiments with reference to the drawings.
本実施例では、一般式がＲｎ−Ｓｉ（ＯＲ′）４−ｎで
ある有機シリコン化合物を主成分とする溶液として、Ｃ
Ｈ３−Ｓｉ（ＯＨ）３とＣ６Ｈ５−Ｓｉ（ＯＨ）３エチ
ルセロソルブアセテートに混合したものを用いた。さら
に該溶液中にリン原子，ホウ素原子を含む化合物をそれ
ぞれ４ｍｏｌ％の濃度で混合し塗布溶液とした。In this embodiment, as a solution general formula as a main component R n -S i (OR ') an organic silicon compound is a 4-n, C
It was a mixture in H 3 -S i (OH) 3 and C 6 H 5 -S i (OH ) 3 ethyl cellosolve acetate. Further, a compound containing phosphorus atoms and boron atoms was mixed in the solution at a concentration of 4 mol% to prepare a coating solution.
第１図は、本発明の一実施例の半導体装置の素子分離領
域の形成工程を示す断面図である。FIG. 1 is a sectional view showing a process of forming an element isolation region of a semiconductor device according to an embodiment of the present invention.
第１図（ａ）において、Ｐ型シリコン基板１０１表面の
素子分離領域を形成すべき部分にリソグラフィー工程お
よびエッチングにより、深さ約１μｍの溝１０２，１０
２′を形成する。In FIG. 1A, the grooves 102, 10 each having a depth of about 1 μm are formed in a portion of the surface of the P-type silicon substrate 101 where an element isolation region is to be formed by a lithography process and etching.
2'is formed.
次に、同図（ｂ）に示すように化学気相成長によるシリ
コン窒化膜１０３を形成する。続いて同図（ｃ）に示す
ように上記塗布溶液を塗布し、１５０℃で３０分間さら
に４５０℃で３０分間、酸素を含む雰囲気中で熱処理す
ることによって厚さ約３μｍの樹脂ガラス膜１０４を形
成し、さらに、９００℃で１時間、酸素ガス雰囲気中で
熱処理せしめることによって、樹脂膜ガラス膜を酸化分
解し、同図（ｄ）に示すように厚さ約１．５μｍのシリ
コン酸化膜１０５に変える。Next, a silicon nitride film 103 is formed by chemical vapor deposition as shown in FIG. Subsequently, as shown in FIG. 3C, the above coating solution is applied and heat-treated at 150 ° C. for 30 minutes and further at 450 ° C. for 30 minutes in an atmosphere containing oxygen to form a resin glass film 104 having a thickness of about 3 μm. The resin film glass film is oxidatively decomposed by being formed and further heat-treated at 900 ° C. for 1 hour in an oxygen gas atmosphere, and a silicon oxide film 105 having a thickness of about 1.5 μm is formed as shown in FIG. Change to.
次にドライエッチングによるエッチバッグで半導体基板
表面の溝部以外のシリコン酸化膜を除去し、同図（ｅ）
に示すように溝内に素子分離シリコン酸化膜１０６，１
０６′を埋込む。Next, the silicon oxide film other than the groove on the surface of the semiconductor substrate is removed by an etch bag by dry etching.
Element isolation silicon oxide films 106, 1
06 'is embedded.
以上の工程の後、半導体基板凸部表面のシリコン窒化膜
１０３をエッチングし、同図（ｆ）に示すように素子分
離領域の形成が完了する。After the above steps, the silicon nitride film 103 on the surface of the convex portion of the semiconductor substrate is etched, and the formation of the element isolation region is completed as shown in FIG.
以上説明したように本発明は、一般式が である有機シリコン化合物を主成分とする溶液を素子間
を分離するために形成された溝を有する半導体基板表面
に塗布、熱処理せしめることによって、半導体基板表面
の凹凸を平坦化することが可能となり、ゆえに半導体基
板凸部上表面に存在するシリコン酸化膜の除去が、エッ
チバックにより簡単化され、リソグラフィー工程無しに
凹部内にシリコン酸化膜を埋込むことが可能となる。し
たがって、素子分離領域形成後の半導体基板表面を平坦
にすることが出来るという効果がある。As described above, the present invention has the general formula By applying a solution containing an organic silicon compound as a main component to a semiconductor substrate surface having a groove formed to separate elements from each other and subjecting it to heat treatment, it becomes possible to flatten the unevenness of the semiconductor substrate surface, Therefore, the removal of the silicon oxide film existing on the upper surface of the convex portion of the semiconductor substrate is simplified by etching back, and the silicon oxide film can be embedded in the concave portion without a lithography process. Therefore, there is an effect that the surface of the semiconductor substrate after forming the element isolation region can be made flat.
さらに塗布法によってシリコン酸化膜を形成することか
ら生産性が高いという利点を有する。Further, since the silicon oxide film is formed by the coating method, there is an advantage that the productivity is high.
また、本発明では有機シリコン化合物を主成分とする溶
液を、最初に１５０℃以下の温度で、続いて４５０℃以
下の温度でそれぞれ所定時間だけ少なくとも酸素を含む
雰囲気中で熱処理せしめることによって該溶液を樹脂ガ
ラス膜に変えるので、膜厚方向に均一な膜組成の樹脂ガ
ラス膜を得ることができ、更にこれに基づいて均一組成
のシリコン酸化膜を得ることができるので、均一なリー
ク電流の低減が可能となる。Further, in the present invention, a solution containing an organic silicon compound as a main component is first heat-treated at a temperature of 150 ° C. or lower, and then at a temperature of 450 ° C. or lower for a predetermined time in an atmosphere containing at least oxygen to obtain the solution. Is changed to a resin glass film, a resin glass film having a uniform film composition in the film thickness direction can be obtained, and based on this, a silicon oxide film having a uniform composition can be obtained, so that a uniform leak current can be reduced. Is possible.
更に、シリコン窒化膜を予め形成した上で、これをスト
ッパとしてシリコン酸化膜をエッチバックし、その後に
シリコン窒化膜を除去することにより、半導体素子間分
離溝の内部にのみシリコン酸化膜を残し、半導体基板の
表面の平坦化を図ることが可能となる。Furthermore, after forming a silicon nitride film in advance, the silicon oxide film is etched back using this as a stopper, and then the silicon nitride film is removed, leaving the silicon oxide film only inside the semiconductor element isolation trench, The surface of the semiconductor substrate can be flattened.
以上のように、本発明による半導体装置の素子間分離領
域の形成方法は、半導体装置の高密度・高集積化に多大
の効果をもたらす。As described above, the method for forming the element isolation region of the semiconductor device according to the present invention brings a great effect on the high density and high integration of the semiconductor device.
第１図は本発明の一実施例の半導体装置の素子分離領域
の形成方法を示す工程断面図である。 第２図は従来の半導体装置の素子分離領域の形成方法を
示す工程断面図である。 第３図は従来の半導体装置の素子分離領域の形成方法に
おける問題点を示す断面図である。 第１図において、 １０１……Ｐ型シリコン基板、１０２，１０２′……
溝、１０３……シリコン窒化膜、１０４……樹脂ガラス
膜、１０５……シリコン酸化膜、１０６，１０６′……
素子分離シリコン酸化膜、である。 第２図において、 ２０１……シリコン基板、２０２，２０２′……溝、２
０３……シリコン窒化膜、２０４……シリコン酸化膜、
２０５，２０５′……フォトレジスト、２０６，２０
６′……素子分離シリコン酸化膜、２０７……ポリシリ
コン膜、２０８，２０８′……フォトレジスト、２０
９，２０９′……ポリシリコン膜、２１０，２１０′…
…素子分離シリコン酸化膜、である。 第３図において、 ３０１……シリコン基板、３０２，３０２′……突起状
のシリコン酸化膜、３０３，３０３′……シリコン酸化
膜のへこみ、である。FIG. 1 is a process sectional view showing a method for forming an element isolation region of a semiconductor device according to an embodiment of the present invention. FIG. 2 is a process sectional view showing a method of forming an element isolation region of a conventional semiconductor device. FIG. 3 is a cross-sectional view showing a problem in a conventional method of forming an element isolation region of a semiconductor device. In FIG. 1, 101 ... P-type silicon substrate, 102, 102 '...
Groove, 103 ... Silicon nitride film, 104 ... Resin glass film, 105 ... Silicon oxide film, 106, 106 '...
Element isolation silicon oxide film. In FIG. 2, 201 ... Silicon substrate, 202, 202 '... Groove, 2
03 ... Silicon nitride film, 204 ... Silicon oxide film,
205, 205 '... Photoresist, 206, 20
6 '... Element isolation silicon oxide film, 207 ... Polysilicon film, 208, 208' ... Photoresist, 20
9,209 '... Polysilicon film, 210,210' ...
... element isolation silicon oxide film. In FIG. 3, 301 ... Silicon substrate, 302, 302 '... Protruding silicon oxide film, 303, 303' ... Silicon oxide film dent.
Claims (1)
面にシリコン窒化膜を形成する工程と、この上に一般式
がＲｎ−Ｓｉ（ＯＲ′）４−ｎ （Ｒ：１価の炭化水素
基、Ｒ′：炭素数０〜４の炭化水素基、ｎ：０，１，
２，３）である有機シリコン化合物を主成分とする溶液
を前記半導体素子間分離溝の深さよりも厚く塗布する工
程と、１５０℃以下の温度で、続いて４５０℃以下の温
度でそれぞれ所定時間だけ少なくとも酸素を含む雰囲気
中で熱処理せしめることによって該溶液を樹脂ガラス膜
に変える工程と、続いて５００℃以上の温度で酸素雰囲
気中で熱処理し該樹脂ガラス膜を酸化分解しシリコン酸
化膜に変える工程と、前記シリコン窒化膜をストッパと
したエッチバックにより半導体基板表面の半導体素子間
分離溝以外に存在する該シリコン酸化膜を除去する工程
と、前記半導体素子間分離溝以外に存在する該シリコン
窒化膜を除去する工程とを含むことを特徴とする半導体
素子分離領域の形成方法。1. A step of forming a silicon nitride film on the surface of a semiconductor substrate having a separation groove between semiconductor elements, and a general formula of Rn-Si (OR ') 4-n (R: a hydrocarbon group having a valence of 1). , R ': a hydrocarbon group having 0 to 4 carbon atoms, n: 0, 1,
2, 3) a step of applying a solution containing an organic silicon compound as a main component so as to be thicker than the depth of the semiconductor element separating groove, and at a temperature of 150 ° C. or lower, and subsequently at a temperature of 450 ° C. or lower for a predetermined time respectively. A step of converting the solution into a resin glass film by heat-treating it only in an atmosphere containing at least oxygen, and subsequently performing a heat treatment in an oxygen atmosphere at a temperature of 500 ° C. or higher to decompose the resin glass film into a silicon oxide film. A step of removing the silicon oxide film existing on the surface of the semiconductor substrate other than the semiconductor element isolation trench by etching back using the silicon nitride film as a stopper; and a silicon nitride present on the semiconductor element isolation trench other than the semiconductor element isolation trench. And a step of removing the film, the method for forming a semiconductor element isolation region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60253940A JPH0656866B2 (en) | 1985-11-12 | 1985-11-12 | Method for forming semiconductor element isolation region |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60253940A JPH0656866B2 (en) | 1985-11-12 | 1985-11-12 | Method for forming semiconductor element isolation region |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62113443A JPS62113443A (en) | 1987-05-25 |
| JPH0656866B2 true JPH0656866B2 (en) | 1994-07-27 |
Family
ID=17258113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60253940A Expired - Fee Related JPH0656866B2 (en) | 1985-11-12 | 1985-11-12 | Method for forming semiconductor element isolation region |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0656866B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3178412B2 (en) | 1998-04-27 | 2001-06-18 | 日本電気株式会社 | Method of forming trench isolation structure |
| US6458713B1 (en) | 1999-06-28 | 2002-10-01 | Kabushiki Kaisha Toshiba | Method for manufacturing semiconductor device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57160132A (en) * | 1981-03-27 | 1982-10-02 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1985
- 1985-11-12 JP JP60253940A patent/JPH0656866B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62113443A (en) | 1987-05-25 |
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