JPH0658938B2 - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH0658938B2 JPH0658938B2 JP58191189A JP19118983A JPH0658938B2 JP H0658938 B2 JPH0658938 B2 JP H0658938B2 JP 58191189 A JP58191189 A JP 58191189A JP 19118983 A JP19118983 A JP 19118983A JP H0658938 B2 JPH0658938 B2 JP H0658938B2
- Authority
- JP
- Japan
- Prior art keywords
- cap
- plate
- light
- present
- translucent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
- H10W76/10—Containers or parts thereof
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Description
【発明の詳細な説明】 (a)発明の技術分野 本発明はメモリ用半導体装置に係り、特にキャップに具
備する透光板の形状の改良に関するものである。Description: (a) Technical Field of the Invention The present invention relates to a semiconductor device for memory, and more particularly to improvement of the shape of a light-transmitting plate included in a cap.
(b)従来の技術 EPROM(erasable programmable read only memor
y)は一旦メモリを記入した半導体チップに紫外線を照
射してメモリを消去することが可能な半導体メモリ装置
で、半導体容器のキャップ(蓋)に紫外線を透過させる
ことが可能な透光板が設けられており、容器内の半導体
チップが透光板を通して完全に透視することができ、紫
外線を充分照射することが可能な構造を有している。ま
た、EPROMが内蔵されているワンチップマイコンに
おいても、同様な透光板が設けられている。(b) Conventional technology EPROM (erasable programmable read only memor)
y) is a semiconductor memory device capable of erasing the memory by irradiating the semiconductor chip on which the memory has been written with ultraviolet rays, and the cap of the semiconductor container is provided with a transparent plate capable of transmitting the ultraviolet rays. The semiconductor chip in the container can be completely seen through the transparent plate and has a structure capable of sufficiently irradiating ultraviolet rays. A similar light-transmitting plate is also provided in the one-chip microcomputer in which the EPROM is incorporated.
第6図はガラス封止型のEPROMの外形図であり、1
はセラミックキャップ、2は透光板、3は半導体チップ
を収納するリードベースである。キャップ1はリードベ
ース3に低融点ガラス4で封着されている。第7図はキ
ャップ1の断面図であり、透光板2はガラス板や透明石
英板等の透光性の良い材料からなり、キャップ1に設け
た窓の内側壁と透光板2の側面とを溶着して構成してお
り、従来のこのような透光板の形状は図示するように真
円である。FIG. 6 is an outline view of a glass-sealed EPROM.
Is a ceramic cap, 2 is a translucent plate, and 3 is a lead base for housing a semiconductor chip. The cap 1 is sealed to the lead base 3 with a low melting point glass 4. FIG. 7 is a cross-sectional view of the cap 1, and the translucent plate 2 is made of a highly translucent material such as a glass plate or a transparent quartz plate, and the inner wall of the window provided in the cap 1 and the side surface of the translucent plate 2 are shown. And are welded together, and the shape of such a conventional transparent plate is a perfect circle as shown in the figure.
しかしながら、集積度が高くなって半導体チップが大型
化し、かつ、回路設計上の問題を解決するために短冊形
の細長い半導体チップが用いられるようになったので、
半導体チップをリードベース3に搭載する場合には、こ
の透光板2の大きさも大きくしなければならなくなっ
た。However, since the degree of integration has increased and the semiconductor chip has grown in size, and strip-shaped elongated semiconductor chips have come to be used to solve problems in circuit design,
When the semiconductor chip is mounted on the lead base 3, it is necessary to increase the size of the transparent plate 2.
従ってこのような短冊形の半導体チップを収納する半導
体容器のキャップに真円形の透光板を設けようとする
と、寸法的に限界があり、第8図に示すような細長い矩
形の透過窓を設けなければならない。Therefore, when it is attempted to provide a perfect circular light-transmitting plate on the cap of the semiconductor container for accommodating such a strip-shaped semiconductor chip, there is a dimensional limitation, and an elongated rectangular transmission window as shown in FIG. 8 is provided. There must be.
しかしながら、このような大型の透光板22をキャップ
21に溶着すると、機械的強度が脆弱な透光板22は熱
歪みのために割れやすくなり、溶着部に隙間が生じて気
密を保持することが困難になる。However, when such a large translucent plate 22 is welded to the cap 21, the translucent plate 22 having weak mechanical strength is easily cracked due to thermal strain, and a gap is formed in the welded portion to maintain airtightness. Becomes difficult.
このため、キャップ21と透光板22とは熱膨張率が出
来るだけ近い材料を用いて製造しているが、材料を選ぶ
だけでは透光板の割れを防止することが困難で、透光板
にクラックが生じたり、溶着部に隙間が生じて半導体容
器の気密が破壊されるようになる。Therefore, the cap 21 and the translucent plate 22 are manufactured by using a material having a coefficient of thermal expansion that is as close as possible, but it is difficult to prevent the translucent plate from cracking only by selecting the material. The airtightness of the semiconductor container will be broken due to the occurrence of cracks or gaps in the welded portion.
(c)発明の目的 本発明はこの様な大型透光板のクラックの発生や、溶着
部の気密破壊を減少させることが可能となる半導体装置
の構造の改良を提案するものである。(c) Object of the Invention The present invention proposes an improvement in the structure of a semiconductor device that can reduce the occurrence of cracks in such a large-sized light-transmitting plate and the airtight destruction of the welded portion.
(d)発明の構成 上記目的は本発明により、セラミックよりなるキャップ
に設けられた少くとも四隅が丸みを有する長方形状の窓
の内側壁と、キャップと同一厚さを有し、窓と同一形状
のガラス等の透光性材よりなる透光板の外側面とを溶着
したキャップが、EPROMを有する半導体チップを収
納するリードベースの上面に封着されていることを特徴
とする半導体装置によって達成される。(d) Structure of the Invention According to the present invention, the above object is to provide an inner wall of a rectangular window having at least four rounded corners provided in a cap made of ceramic, having the same thickness as the cap, and having the same shape as the window. The present invention is achieved by a semiconductor device characterized in that a cap, which is welded to the outer surface of a light-transmitting plate made of a light-transmitting material such as glass, is sealed on the upper surface of a lead base that houses a semiconductor chip having an EPROM. To be done.
(e)発明の実施例 以下、本発明の実施例を第1図〜第5図によりセラミッ
クキャップの場合について詳細に説明する。(e) Embodiment of the Invention Hereinafter, an embodiment of the present invention will be described in detail with reference to FIGS. 1 to 5.
第1図は本発明による第1の実施例のEPROMの外形
図である。図示するようにガラス板や透明石英板等の透
光性の良い材料からなる透光板32は楕円形であり、セ
ラミックよりなるキャップ31とリードベース33とは
封着材で封着されている。FIG. 1 is an outline view of the EPROM of the first embodiment according to the present invention. As shown in the figure, a light-transmitting plate 32 made of a material having a good light-transmitting property such as a glass plate or a transparent quartz plate has an elliptical shape, and a cap 31 made of ceramic and a lead base 33 are sealed with a sealing material. .
この接着材としては、融点が400〜500℃の低融点
ガラス34或いは封止温度が250〜400℃の有機性
接着剤を用いており、キャップ31の材料としてはセラ
ミックが用いられており、CERDIP型パッケージの
封止に用いられている。As the adhesive material, a low melting point glass 34 having a melting point of 400 to 500 ° C. or an organic adhesive having a sealing temperature of 250 to 400 ° C. is used, and a ceramic is used as a material of the cap 31, and CERDIP is used. It is used to seal mold packages.
これらの封着材はキャップ31の封止面に塗布されてお
り、キャップ31とリードベース33とは低温加熱によ
り封止されている。These sealing materials are applied to the sealing surface of the cap 31, and the cap 31 and the lead base 33 are sealed by low temperature heating.
第2図は第1図に示すキャップ31及び透光板32の平
面図であり、第3図はその断面構造図であり、キャップ
31に設けられた楕円形の窓には、窓と同一形状でキャ
ップと等しい厚さの透光板32が取付けられている。2 is a plan view of the cap 31 and the translucent plate 32 shown in FIG. 1, and FIG. 3 is a cross-sectional structural view thereof. The elliptical window provided in the cap 31 has the same shape as the window. A transparent plate 32 having the same thickness as the cap is attached.
本実施例の透光板32は楕円形であり、特にストレスの
生じ易い四隅が丸み形状となっているのでストレスが発
生しにくく、真円形に次いで優れた形状であり、また透
光板32とキャップ31とは同一の厚みを有するので窓
の内周面より透光板の外周面への応力は一様となり、従
って透光板が割れることは極めて少ない。The translucent plate 32 of this embodiment has an elliptical shape, and since the four corners where stress is particularly likely to occur are rounded, stress is less likely to occur, and it has an excellent shape second only to a perfect circle. Since the cap 31 has the same thickness as that of the cap 31, the stress from the inner peripheral surface of the window to the outer peripheral surface of the transparent plate becomes uniform, and therefore the transparent plate is hardly cracked.
このようなキャップ31の窓の内側壁と、透光板32の
側壁とは高温度で溶着されているから、低温度で封止を
行なう場合においても熱により破壊されることはない。Since the inner side wall of the window of the cap 31 and the side wall of the transparent plate 32 are welded at a high temperature, they are not destroyed by heat even when sealing is performed at a low temperature.
しかも、上記のようなストレスが生じ難い形状であるか
ら、このような楕円形の透光板32を有するEPROM
の信頼性は著しく高くなる。Moreover, the EPROM having such an elliptical light-transmitting plate 32 has such a shape that the above stress is unlikely to occur.
Is significantly more reliable.
第4図は本発明による第2の実施例のキャップ41及び
透光板42の平面図であり、このキャップ41に設けて
いる透光板42は両端を半円形にした長方形である。FIG. 4 is a plan view of the cap 41 and the light transmitting plate 42 of the second embodiment according to the present invention. The light transmitting plate 42 provided on the cap 41 is a rectangle having semicircular ends.
楕円形透光板を長方形のキャップに設けた窓内に埋め込
むためには、キャップの幅を広くすることが必要にな
り、キャップの幅が狭い場合には、キャップの強度が低
下する恐れがあるが、両端を半円形にした長方形の透光
板を用いればその心配がなくなる。In order to embed the elliptical light-transmitting plate in the window provided in the rectangular cap, it is necessary to widen the width of the cap. When the width of the cap is narrow, the strength of the cap may decrease. However, if you use a rectangular translucent plate with semicircular ends, you do not have to worry about it.
第5図は本発明による第3の実施例のキャップ51及び
透光板52の平面図であり、このキャップ51に設けて
いる透光板52は四隅に半径Rの丸味を設けた長方形で
ある。この長方形の幅をLとした場合に、このRの寸法
をLの1/10以上にすることによりストレスの集中を
防止することが可能となる。このような形状の透光板を
キャップの窓内に埋め込む場合には、約1,100℃で
透光板とキャップの接触面を溶着した後、透光板の材料
である不透明になった透光ガラスを透明にするために約
900℃の加熱処理を行ない、透光板とキャップの溶着
が完了する。FIG. 5 is a plan view of a cap 51 and a light-transmitting plate 52 according to a third embodiment of the present invention. The light-transmitting plate 52 provided on the cap 51 is a rectangle having rounded corners of radius R at its four corners. . When the width of this rectangle is L, the concentration of stress can be prevented by setting the dimension of R to 1/10 or more of L. When embedding a translucent plate having such a shape in the window of the cap, after welding the contact surface between the translucent plate and the cap at about 1,100 ° C., the opaque translucent material which is the material of the translucent plate is welded. A heat treatment at about 900 ° C. is performed to make the optical glass transparent, and the welding of the transparent plate and the cap is completed.
(f)発明の効果 以上の説明から明らかなように本発明によれば、透光板
が大型化したEPROMやワンチップマイコンにおい
て、透光板のクラックの発生や溶着部の気密破壊を減少
させるように、キャップと透光板とを溶着させることが
可能となり、半導体装置の品質向上に極めて貢献するも
のである。(f) Effects of the Invention As is clear from the above description, according to the present invention, in the EPROM or the one-chip microcomputer in which the light transmitting plate is enlarged, the occurrence of cracks in the light transmitting plate and the airtight destruction of the welded portion are reduced. As described above, it becomes possible to weld the cap and the transparent plate, which greatly contributes to the improvement of the quality of the semiconductor device.
第1図は本発明による第1の実施例のEPROMの外形
図、 第2図は本発明による第1の実施例のキャップの平面
図、 第3図は本発明による第1の実施例のキャップの断面構
造図、 第4図は本発明による第2の実施例のキャップの平面
図、 第5図は本発明による第3の実施例のキャップの平面
図、 第6図は従来のEPROMの外形図、 第7図は従来のキャップの断面図、 第8図は従来のキャップの平面図、 である。 図において、 1,21は従来のキャップ、 2,22は従来の透光板、 3,33はリードベース、 4,34は低融点ガラス、 31,41,51は本発明による実施例のキャップ、 32,42,52は本発明による実施例の透光板、 を示す。FIG. 1 is an external view of an EPROM according to the first embodiment of the present invention, FIG. 2 is a plan view of a cap according to the first embodiment of the present invention, and FIG. 3 is a cap of the first embodiment according to the present invention. 4 is a plan view of the cap of the second embodiment according to the present invention, FIG. 5 is a plan view of the cap of the third embodiment according to the present invention, and FIG. 6 is the outline of a conventional EPROM. Fig. 7 is a sectional view of a conventional cap, and Fig. 8 is a plan view of a conventional cap. In the drawing, 1,21 is a conventional cap, 2,22 is a conventional transparent plate, 3,33 is a lead base, 4,34 is a low-melting glass, 31,41,51 are caps of the examples according to the present invention, Reference numerals 32, 42 and 52 denote translucent plates according to the embodiments of the present invention.
Claims (1)
少くとも四隅が丸みを有する長方形状の窓の内側壁と、
キャップと同一厚さを有し、窓と同一形状のガラス等の
透光性材よりなる透光板の外側面とを溶着したキャップ
が、EPROMを有する半導体チップを収納するリード
ベースの上面に封着されていることを特徴とする半導体
装置。1. An inner wall of a rectangular window provided on a cap made of ceramic and having at least four rounded corners,
A cap having the same thickness as the cap and the window and the outer surface of a light-transmitting plate made of a light-transmitting material such as glass having the same shape is welded to the upper surface of the lead base for housing the semiconductor chip having the EPROM. A semiconductor device characterized by being worn.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58191189A JPH0658938B2 (en) | 1983-10-12 | 1983-10-12 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58191189A JPH0658938B2 (en) | 1983-10-12 | 1983-10-12 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6081844A JPS6081844A (en) | 1985-05-09 |
| JPH0658938B2 true JPH0658938B2 (en) | 1994-08-03 |
Family
ID=16270378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58191189A Expired - Fee Related JPH0658938B2 (en) | 1983-10-12 | 1983-10-12 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0658938B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61172352A (en) * | 1985-01-26 | 1986-08-04 | Kyocera Corp | Semiconductor package |
| JPS62204549A (en) * | 1986-03-05 | 1987-09-09 | Hirabayashi:Kk | Semiconductor device |
| US6037655A (en) * | 1998-01-12 | 2000-03-14 | Eastman Kodak Company | Linear image sensor package assembly |
| JP3129275B2 (en) * | 1998-02-27 | 2001-01-29 | 日本電気株式会社 | Semiconductor device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5532005A (en) * | 1978-08-25 | 1980-03-06 | Ricoh Co Ltd | Hologram information memory device |
-
1983
- 1983-10-12 JP JP58191189A patent/JPH0658938B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6081844A (en) | 1985-05-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |