JPH0658953B2 - Semiconductor device - Google Patents

Description

The present invention relates to a semiconductor device, and more particularly to a light emitting diode element (LED) having an SOI structure which can be integrated with other elements.

(Prior Art) With the progress of semiconductor technology, high functionality is being advanced in the field of optical sensors, and high integration is desired. And S
With the advent of the OI structure, various devices can be integrated.

However, conventionally, the light emitting diode element (LED) has always been used as a single body or incorporated in a hybrid integrated circuit.

This is because the light emitting diode element is gallium arsenide (GaA
s), aluminum gallium arsenide (AlxGa _1- xA
This is because it is difficult to epitaxially grow the compound semiconductor layer on the surface of the insulating layer or the like because light emission by recombination of electrons and holes in the pn junction of the compound semiconductor such as s) is used.

That is, although such a compound semiconductor formed by epitaxial growth is used, it is extremely difficult to epitaxially grow a compound semiconductor layer on an underlayer having a different lattice constant, so that it is difficult to construct a monolithic integrated circuit. It was supposed to be.

Recently, a light emitting diode (LED) has been proposed in which a germanium (Ge) island region is formed on a SiO ₂ / Si substrate and a GaAs pn junction is used on this island region (Journal of Applied Physics, Vol. 22, NO.7, July, 1983 pp. L450
-L451). Also, research has been conducted on a method of epitaxially growing a GaAs layer on the Ge island region (Materials Research Society Symposium P
roceedings Vol. 53 1986 p181-186).

(Problems to be Solved by the Invention) However, when a light emitting diode is constructed on an integrated circuit as described above, it is necessary to apply a voltage or take out light only from the front surface side, so that a voltage is efficiently applied to the bonding interface. In addition, it is difficult to efficiently extract light, and it is not practical in terms of luminous efficiency and device area.

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a light emitting diode which can be integrated with other elements, has high light emission efficiency, and occupies a small area.

[Structure of Invention]

(Means for Solving the Problem) Therefore, in the light emitting diode element of the present invention, G is formed on the insulating layer.
High conductivity type III-V of the first conductivity type formed through the e layer
A comb-shaped first structure that meshes with each other on the compound semiconductor layer
The first region is divided into a region and a second region, the first electrode is formed in the first region via a contact layer, and the second region is formed via a reflective layer formed of a high-concentration λ / 4 multilayer film. A pn junction made of a -V compound semiconductor layer is formed, and a second electrode is further formed on the pn junction via a contact layer.

That is, in the light emitting diode element of the present invention, a high concentration III- type of the first conductivity type formed on the insulating film via the Ge layer.
V compound semiconductor layer and high concentration III- of the first conductivity type
A reflective layer made of a III-V compound semiconductor multilayer film, a first conductivity type III-V compound semiconductor layer, and a first conductive type III-V compound semiconductor layer are selectively formed on the V compound semiconductor layer while leaving a comb-teeth-shaped first electrode formation region. Two
A conductive type III-V compound semiconductor layer and a second conductive type high-concentration III-V compound semiconductor layer are sequentially stacked, and further, the first conductive type and second conductive type high-concentration III-V layers are stacked.
The compound semiconductor layer is provided with first and second electrodes, respectively, and a predetermined voltage is applied between the first and second electrodes to obtain the first and second conductivity type III-V compounds. Light is emitted from the pn junction between the semiconductor layers.

Further, according to the present invention, a high-concentration first-conductivity type III-V compound semiconductor layer formed on an insulating layer via a Ge layer and a λ / 4 multilayer film of a first-conductivity type III-V compound semiconductor. And a diode formation region including a second electrode and a first electrode formation region are divided by a meander-shaped trench on the reflection layer, and the diode formation region has a first conductivity type. The III-V compound semiconductor layer, the second conductivity type III-V compound semiconductor layer, the second conductivity type high-concentration III-V compound semiconductor layer, and the second electrode are sequentially laminated, while the first electrode In the electrode formation region, a first electrode is formed on the reflective layer via a high-concentration III-V compound semiconductor layer of the first conductivity type, and a predetermined voltage is applied between the first and second electrodes. Thereby, from the pn junction between the first and second conductivity type III-V compound semiconductor layers, So that it allowed to emit.

(Operation) According to the above configuration, the Ge island region formed on the insulating film is formed.
A III-V compound semiconductor layer is formed, a reflective layer using a λ / 4 multilayer film made of a III-V compound semiconductor is formed on the upper layer, and a semiconductor layer forming a pn junction is formed on the upper layer. The respective layers can be formed with extremely good matching, the occurrence of lattice defects can be suppressed, and good light emission can be produced.

In addition, the presence of this λ / 4 multilayer film guides the emitted light to the front side, which can improve the efficiency.

Furthermore, since the comb-teeth-shaped electrodes (contacts) are formed so as to be meshed with each other while leaving the meander-shaped divided regions, the voltage can be supplied to the pn junction extremely efficiently and uniformly.

In this way, voltage can be supplied from only one surface of the substrate, and light can be efficiently guided to the surface direction by the multilayer film made of III-V compound semiconductor.

As described above, a light-emitting diode with high characteristics can be formed over the insulating layer, so that it can be integrated with other elements, and a light-receiving element, a signal processing circuit, or the like can be integrated under the insulating film. Therefore, a monolithic multifunction device can be formed.

(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings.

Example 1 This light emitting device has a silicon substrate 1 in which other elements such as a signal processing circuit are formed, as shown in FIG.
On the silicon oxide film 2 covering the surface of the germanium (GMR) formed by the zone melting recrystallization method (ZMR) method.
e) High concentration n ⁺ -type AlxGa _1- xAs on the island region 3.
A layer 4 (x = 0.35) is formed, and on this layer, a reflection film composed of a λ / 4 multilayer film 5 of a CaAs layer and an AlxGa _1- xAs layer so as to form a comb shape, an n-type AlxGa _1- x
As layer 6, p-type AlxGa _1- xAs layer 7, high concentration p
Type AlxGa _1- xAs layers 8 are sequentially formed, an upper electrode 9 is formed on the upper layer so as to form a comb tooth shape, and n is formed so as to be located between the comb teeth of the p-type region under the upper electrode.
The same comb-teeth-shaped lower electrode 10 is arranged directly on the ⁺ type AlxGa _1- xAs layer 4 to form a light emitting diode having an emission wavelength λ = 660 nm.

The upper electrode 9 formed on the p-type AlxGa _1- xAs layer 8 is composed of gold-germanium (Au-Ge), and the lower electrode 10 formed on the n ⁺ -type AlxGa _1- xAs layer 4 is gold. -Zinc (Au-Zn).

Further, the λ / 4 multilayer film 5 as the reflection film is shown in FIG.
The n ⁺ type GaAs layer 5a and the n ⁺ type AlxGa _1- xAs layer (x = 0.35) with a film thickness λ / 4 are shown in enlarged form in FIG.
It is formed by alternately stacking 30 layers of 5b and 5b, and has a property of selectively reflecting light having a wavelength of four times the film thickness.

In FIG. 1, the insulating layer covering the electrode surface and the wiring pattern are omitted.

Next, a method of manufacturing this light emitting device will be described.

First, as shown in FIG. 2 (a), in the silicon substrate 1,
After forming a predetermined element region (not shown), a silicon oxide film 2 is formed by using a sputtering method, a CVD method or the like, and then a germanium film 3 is formed by vacuum vapor deposition method and patterned, and the upper layer is further formed. It is covered with a silicon oxide film C for capping composed of two films sequentially formed by a sputtering method and an EB vapor deposition method.

Thereafter, as shown in FIG. 2 (b), the substrate is heated to a predetermined temperature on the lower heater H1 in a vacuum of about 10 ⁻⁶ Torr, and then narrowed by using a strip-shaped upper heater H2. The zone is heated and melted, and the strip-shaped upper heater H2 is moved to recrystallize each minute region. At this time, the recrystallized region normally grows with a grain boundary, but the generation and growth of this grain boundary can be suppressed by the self-seeding method or the filtering method.

Then, as shown in FIG. 2 (c), a high-concentration n ⁺ film having a film thickness of 0.3 μm is formed by a molecular beam epitaxy (MBE) method.
Type AlxGa _1- xAs layer 4, GaAs layer having a film thickness of 165Å and AlxGa _1- xAs layer having a film thickness of 165Å are alternately arranged in total 3
Λ / 4 multilayer film 5 as a reflective film formed by stacking 0 layers, an n-type AlxGa _1- xAs layer 6 having a film thickness of 1.0 μm, a film thickness of 0.
7 μm p-type AlxGa _1- xAs layer 7, film thickness 0.3 μm
A high-concentration p-type AlxGa _1- xAs layer 8 of m is sequentially deposited.

Thereafter, as shown in FIG. 2D, the λ / 4 multilayer film 5, the n-type AlxGa _1- xAs layer 6, and the λ / 4 multilayer film 5 are formed by reactive ion etching through a resist pattern R formed by photolithography. p-type AlxGa _1- xAs
The layer 7 and the high-concentration p-type AlxGa _1- xAs layer 8 are patterned in a comb shape. At this time, n ⁺ type AlxGa _1- x
The As layer 4 is also removed, leaving a depth of 0.2 μm.

Then, leaving this resist pattern as it is, 12
% -Ge-containing Au-Ge layer is deposited by the vacuum evaporation method to form the lower electrode 10, which is heated in a nitrogen atmosphere at 450 [deg.] C. for 2.5 minutes and rapidly cooled. Thereafter, as shown in FIG. 2 (e), the resist pattern is peeled and removed, and a resist pattern having a window in the upper electrode formation region is formed again to form Au.
Deposit a Ge layer by vacuum evaporation (substrate temperature 250
50 ° C.), patterning by lift-off method, and
The upper electrode 9 is formed by heating in a forming gas at 0 ° C. for 2 minutes. Similarly, a lower electrode 1 made of an Au-Zn layer
Form 0.

Further, as shown in FIG. 2 (f), by the CVD method,
A window W for depositing a silicon oxide film 11 and taking out an electrode
1, W2 are formed, an aluminum layer having a film thickness of 0.5 μm is deposited and patterned by a vacuum evaporation method to form a wiring layer 12, and the light emitting device shown in FIG. 1 is completed.

The light-emitting device formed in this manner has a Ge island region 3 formed by the ZMR method on the silicon oxide film, and the AlxGa _1- xAs layer is extremely well-matched on the Ge island region 3.
Since (x = 0.35) is formed and the light emitting diode is formed in a good epitaxial growth layer having no defects, high characteristics can be obtained. Ge here
Has a lattice constant of 5.66 nm, whereas AlxGa
_Since the lattice constant of _1- xAs (x = 0.35) is also in agreement with this, it is possible to form an AlxGa _1- xAs layer having extremely good matching.

Thus, according to the present invention, the light receiving element is provided below the insulating layer,
While integrating a signal processing circuit and the like, a high-performance light emitting diode can be formed on the upper layer of the insulating film, and a monolithic multifunction device can be formed.

In addition, this light-emitting diode can supply voltage only from one surface of the substrate and has p-type AlxGa because the electrodes have a comb-teeth shape that meshes with each other.
_An electric field can be most efficiently applied between the _{1 -} xAs layer and the n-type AlxGa _1- xAs layer.

Furthermore, a multilayer film of an n ⁺ AlxGa _1- xAs layer and an n ⁺ GaAs layer is formed into an n-type AlxGa _1- xAs layer and this n-type Al.
High concentration of A for contact to xGa _1- xAs layer
Since it is interposed between the 1xGa _1- xAs layer and the interface, it is possible to efficiently guide light to the surface direction without generation of defects at the interface. Further, this multilayer film is composed of a high-concentration n ⁺ layer and also functions as a contact layer.

Meanwhile, the emission wavelength of the light emitting diode is determined by the band gap (E _g ) of the semiconductor layer forming the pn junction, and the relationship between the wavelength and the band gap (E _g ) is expressed by the following equation (1).

E _g (eV) = 1.2398 / λ (nm) (1) From this equation (1), the band gap required to obtain the required wavelength can be obtained.

Here, the band gap required to obtain the emission wavelength λ = 660 nm is E _g (eV) = 1.878 from the formula (1).
It becomes 5 eV.

The band gap of AlxGa _1- xAs changes depending on the mixed crystal ratio x.

The relationship between the mixed crystal ratio x and the band gap is expressed by the following equation (2) at a temperature of 297K in the range 0 <x <0.45 where the transition state is direct transition.

E _g (eV) = 1.424 + 1.427x (2) Substituting E _g (eV) = 1.78585 eV into this equation yields x = 0.35.

Further, in AlxGa _1- xAs, the refractive index also changes depending on the mixed crystal ratio x. When the mixed crystal ratio x = 0.35, the refractive index is about 3.32.

Therefore, the reflectance of this multilayer film (see FIG. 1 (b)), GaAlAs layer 4, n ⁺ AlxGa _1- xAs layer 5a,
When the refraction parameters of the n ⁺ GaAs layer 5b and the n-type AlxGa _1- xAs layer 6 are n1, n2, n3, and n1, respectively, and the number of layers is N, they are expressed by the following formula (3).

Here, since n ₁ = 3.66 n ₂ = 3.32 n ₃ = 3.66 nl = 3.32, N = is obtained by substituting these values into the equation (3) and performing numerical calculation. It can be seen that the reflectance is almost 1 when the value is 30 or more.

As described above, the composition of the multilayer film may be selected according to the compositions of the light emitting layer and the contact layer so as to have the best lattice matching, and for example, AlxGa _1- xAs (x = 0.3).
In addition to the GaAs layer, those having a lattice constant close to 5) include zinc selenide (ZnSe: refractive index n = 2.66) and aluminum arsenide (AlAs: refractive index n = 3.178). Also,
InxGa _1- xAsy P _1- y, (AlxGa _1-
x) Quaternary compound semiconductors such as yIn _1- y P are also effective.

Of these, four types of multilayer films GaAs / ZnSe, GaAs / AlAs, Al
The relationship between the number N of GaAs / GaAs and GaAs / AlGaAs films and the reflectance is shown in FIG.

As described above, it can be seen that a desired reflectance can be obtained by appropriately determining the number of films according to the composition of the constituent material of the multilayer film.

Further, by selecting the composition of the multilayer film, it is possible to form a light emitting layer having another composition ratio with good matching by using this as a buffer layer to obtain a light emitting diode having a different emission wavelength.

Second Embodiment Next, a second embodiment of the present invention will be described.

In this light emitting device, the n-type region and the p-type region are separated from each other so as to form a comb-like shape that meshes with each other through a trench T formed so as to reach the multilayer film 5, and the n-type electrode 19 is formed.
And the p-type electrode 20 are formed on the same surface, that is, at the same height.
The semiconductor layer forming the junction is formed of GaAs ₁₋ xPx (x =
0.39), but the same as the light emitting diode of the first embodiment.

That is, germanium (Ge) formed by the zone melting recrystallization method (ZMR) method on the silicon oxide film 2 covering the surface of the silicon substrate 1 in which other elements are formed.
High-concentration n-type AlxGa _1- x formed on the island region 3
An As layer 4 is formed, and a GaAs layer and AlxGa are formed on the As layer 4.
_1- xAs layer and λ / 4 multilayer film 5 for reflection film, GaAs
_1- xPx composition gradient layer 5 ', n-type GaAs _1- xPx layer 1
6, p-type GaAs _1- xPx layer 17, high-concentration p-type GaAs _1-
An xPx layer 18 is sequentially formed, a p-type electrode 19 is formed on the upper layer so as to form a comb tooth, and a contact made of a high concentration n ⁺ -type GaAs _1- xPx layer 14 located between the comb teeth. The same comb-teeth-shaped n-type electrode 20 is disposed on the layer to form a light emitting diode having an emission wavelength λ = 650 nm.

Next, a method of manufacturing this light emitting device will be described.

First, as in Example 1, after forming a predetermined element region (not shown) in the silicon substrate 1, the sputtering method,
After the silicon oxide film 2 is formed by using the CVD method or the like, the germanium film 3 is formed by vacuum evaporation and patterned, and the upper layer is covered with a silicon oxide film for capping (spatering method and EB evaporation method).

After that, the substrate is heated to a predetermined temperature on the lower heater H1 in a vacuum of about 10 ⁻⁶ Torr, and then the narrow band is heated and melted by using the strip-shaped upper heater H2, and the strip-shaped upper portion is heated. The heater H2 is moved to recrystallize each minute region.

Up to this point, the procedure is the same as in the first embodiment.

Subsequently, as shown in FIG. 5A, a high-concentration n-type AlxGa _1- xAs (x = 0.4) layer 4 having a film thickness of 0.3 μm and a film thickness of 16 were formed by a molecular beam epitaxy (MBE) method.
2.5 Å GaAs layer and 162.5 Å film thickness AlxGa _1-
A λ / 4 multi-layer film 5 as a reflective film formed by alternately laminating a total of 30 layers of xAs (x = 0.4) layers, n-type having a film thickness of 25 μm
A GaAs _1- xPx composition gradient layer (x = 0 to 0.4) 5'and an n-type GaAs _1- xPx layer 16 having a film thickness of 50 μm are deposited.

After that, as shown in FIG. 5B, a comb-shaped mask M is formed by a photolithography method, and Zn ions are ion-implanted through the mask to a depth of 0.7, and the surface is further raised. ion implantation to a concentration, p of thickness 0.4μm top of n-type GaAs _1- xPx layer 16 type GaAs _1- xPx layer 1
7. High-concentration p-type GaAs _1- xPx layer 1 with a film thickness of 0.3 μm
Turns into 8.

Then, as shown in FIG. 5C, the λ / 4 multilayer film 5 is formed by laser assisted KOH etching through a resist pattern formed by photolithography.
To form a trench T along the outer shape of the ion-implanted region to separate into a p-type region p and an n-type region n.

Then, as shown in FIG. 5D, the n-type region n-type
N-type ions are ion-implanted into the surface of the GaAs _1- xPx layer 16 to form the n ⁺ GaAs _1- xPx layer 14.

Then, an Au-Si layer is deposited by a vacuum evaporation method to form an n-type electrode 19, which is heated in a hydrogen atmosphere at 425 ° C. for 2.5 minutes and then rapidly cooled. After that, a resist pattern having a window in the p-type electrode formation region is formed, an Al layer is deposited by a vacuum evaporation method (the substrate temperature is 250 ° C.), patterned by a lift-off method, and formed in a forming gas of 500 ° C. Two
The heat is applied for a minute to form the n-type electrode 20.

Then, wiring is formed in the same manner as in Example 1 to complete the light emitting device shown in FIG.

According to this light emitting device, since the surface electrodes are on the same surface, wiring is easy in addition to the effect of the first embodiment.

Here, the λ / 4 multilayer film 5 was formed on the Ge layer 3 via the n ⁺ AlxGa _1- xAs layer 4, but the λ / 4 multilayer film 5 was directly formed on the Ge layer 3.
The / 4 multilayer film 5 may be formed.

In addition, in each of the above-mentioned two embodiments, each semiconductor layer of the light emitting device needs to be epitaxially grown on the substrate. As the epitaxial growth method, in addition to the molecular beam epitaxy method (MBE method) used here, a gas source molecular beam is used. An epitaxy method (GSMBE method), a metal organic chemical vapor deposition method (MOCVD method), a liquid phase growth method (LPE method), or the like is used.

Further, the composition of each semiconductor layer can be appropriately changed in consideration of the lattice matching with the base and the color development.

For example, as the high-concentration III-V compound semiconductor layer of the first conductivity type, in addition to aluminum gallium arsenide (AlGaAs),
Gallium arsenide (GaAs) may be used. Further, by adjusting the composition of the multilayer film, in addition to the function as the reflection layer, it is possible to have the function as the buffer layer for alleviating the lattice mismatch between the n-type layer and the contact layer.

Furthermore, if necessary, a compositionally graded layer is interposed between the semiconductor layer and the multilayer film forming the light emission interface to smoothly connect the conduction band, whereby a light emitting diode with higher efficiency can be obtained. Become.

The impurity concentration and the thickness of each semiconductor layer are not limited to the examples, and may be changed as needed.

In addition, the present invention can be variously modified and implemented without departing from the spirit of the invention.

〔effect〕

As described above, according to the present invention, a high-concentration III-type first conductivity type formed on the insulating film via the Ge layer.
V compound semiconductor layer and high concentration III- of the first conductivity type
A reflective layer made of a III-V compound semiconductor multilayer film, a first conductivity type III-V compound semiconductor layer, and a first conductive type III-V compound semiconductor layer are selectively formed on the V compound semiconductor layer while leaving a comb-teeth-shaped first electrode formation region. Two
A conductive type III-V compound semiconductor layer and a second conductive type high-concentration III-V compound semiconductor layer are sequentially stacked, and further, the first conductive type and second conductive type high-concentration III-V layers are stacked.
The compound semiconductor layer is provided with first and second electrodes, respectively, and a predetermined voltage is applied between the first and second electrodes to obtain the first and second conductivity type III-V compounds. Since light is emitted from the pn junction between the semiconductor layers, integration with other elements is possible, and a highly efficient monolithic multifunctional device can be formed without defects due to lattice mismatch.

[Brief description of drawings]

FIG. 1 is a diagram showing a light emitting device of a first embodiment of the present invention, FIGS. 2 (a) to 2 (f) are diagrams showing manufacturing steps of the same light emitting device, and FIG. FIG. 4 is a diagram showing a relationship between the number of films and reflectance, FIG. 4 is a diagram showing a light emitting device of a second embodiment of the present invention, and FIGS. 5 (a) to 5 (d) are manufacturing the same light emitting device. It is a figure which shows a process. 1 ... Silicon substrate, 2 ... Silicon oxide film, 3 ... Germanium (Ge) island region, 4 ... n ⁺ type AlxGa
_1- xAs layer, 5 ... λ / 4 multilayer film, 5 '... n-type Ca
As _1- xPx composition gradient layer, 6 ... n-type AlxGa _1-
xAs layer, 7 ... p-type AlxGa _1- xAs layer, 8 ...
p ⁺ type AlxGa _1- xAs layer, 9 ... Upper electrode, 10
... lower electrode, 11 ... silicon oxide film, 12 ... wiring layer, 14 ... n ⁺ GaAs _1- xPx layer, 16 ... n-type GaAs
_1- xPx layer, 17 ... p-type GaAs _1- xPx layer, 18 ...
... p ⁺ type GaAs _1- xPx layer, 19 ... p-type electrode, 20 ...
... n-type electrode.

 ─────────────────────────────────────────────────── ─── Continuation of the front page (56) References Japanese Journal of Applied Physics, Vol. 22, No. 7, (1983-7) P. L 450-451

Claims (6)

[Claims] 1. A high-concentration first-conductivity-type III-V compound semiconductor layer formed on an insulating layer formed on a surface of a substrate via a germanium (Ge) layer, and a high-concentration first-conductivity type compound semiconductor layer. On the III-V compound semiconductor layer, a reflective layer formed of a λ / 4 multilayer film of a III-V compound semiconductor selectively and sequentially formed leaving a comb-teeth-shaped first electrode formation region, and a first conductive layer. Type III-V compound semiconductor layer,
A second conductivity type III-V compound semiconductor layer, a second conductivity type high-concentration III-V compound semiconductor layer, and the first conductivity type and second conductivity type high-concentration III
-V compound semiconductor layer and a first electrode and a second electrode respectively formed, by applying a predetermined voltage between the first and second electrodes, the first and second conductivity type. The semiconductor device is characterized in that light is emitted from the pn junction between the III-V compound semiconductor layers. 2. The semiconductor device according to claim 1, wherein the high-concentration III-V compound semiconductor layer of the first conductivity type is a gallium arsenide (GaAs) layer. 3. The high-concentration III-V compound semiconductor layer of the first conductivity type is aluminum gallium arsenide (AlxGa).
The semiconductor device according to claim 1, wherein the semiconductor device is a _1- xAs) layer. 4. The semiconductor device according to claim 1, wherein the III-V compound semiconductor layer forming the pn junction is an AlxGa _1- xAs layer. 5. The λ / 4 multilayer film is made of GaAs and AlxGa _1-
The semiconductor device according to any one of claims (1) to (4), wherein the semiconductor device is a multilayer film formed by repeating xAs. 6. A first-conductivity-type high-concentration III-V compound semiconductor layer formed on an insulating layer formed on a substrate surface via a Ge layer, and the first-conductivity-type high-concentration III-V compound semiconductor layer. A reflective layer formed of a λ / 4 multilayer film of a III-V compound semiconductor formed on the V compound semiconductor layer; a diode formation region including a second electrode by a meander-shaped trench formed on the reflective layer; And a diode formation region, the diode formation region includes a first conductivity type III-V compound semiconductor layer and a second conductivity type III-V compound semiconductor layer.
A second conductive type high-concentration III-V compound semiconductor layer;
An electrode is sequentially stacked, and the first electrode formation region includes a first electrode on the reflective layer with a high-concentration III-V compound semiconductor layer of the first conductivity type interposed therebetween. A semiconductor device characterized in that light is emitted from a pn junction between the first and second conductivity type III-V compound semiconductor layers by applying a predetermined voltage between the two electrodes.