JPH0664763B2 - Magneto-optical recording medium - Google Patents
Magneto-optical recording mediumInfo
- Publication number
- JPH0664763B2 JPH0664763B2 JP59150595A JP15059584A JPH0664763B2 JP H0664763 B2 JPH0664763 B2 JP H0664763B2 JP 59150595 A JP59150595 A JP 59150595A JP 15059584 A JP15059584 A JP 15059584A JP H0664763 B2 JPH0664763 B2 JP H0664763B2
- Authority
- JP
- Japan
- Prior art keywords
- magneto
- optical recording
- layer
- recording medium
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010410 layer Substances 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 33
- 239000011521 glass Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 239000011241 protective layer Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 description 17
- 239000010408 film Substances 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- -1 rare earth transition metal Chemical class 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- 229910052723 transition metal Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910016629 MnBi Inorganic materials 0.000 description 2
- 229910002837 PtCo Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910017768 LaF 3 Inorganic materials 0.000 description 1
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
- G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
- G11B11/10—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
- G11B11/105—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
- G11B11/10582—Record carriers characterised by the selection of the material or by the structure or form
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、レーザー光を用いて情報の記録再生消去をお
こなう光磁気記録媒体に関する。TECHNICAL FIELD The present invention relates to a magneto-optical recording medium for recording / reproducing / erasing information by using a laser beam.
（従来技術とその問題点） 光ディスクメモリは高密度・大容量・高速アクセスが可
能であるということから、現在の磁気ディスクメモリに
代わる新規なメモリとして考えられている。中でも光磁
気記録媒体を用いた光磁気ディスクは書き替え性を有し
ていることから最も注目され、近年活発に研究開発がお
こなわれている。(Prior Art and Its Problems) Optical disk memories are considered as a new memory to replace the current magnetic disk memories because they can be accessed with high density, large capacity and high speed. Among them, the magneto-optical disk using the magneto-optical recording medium has received the most attention because it has rewritability, and has been actively researched and developed in recent years.
従来より知られている光磁気記録媒体の構成は、第１図
に示したように支持基板１としてガラスあるいは有機物
樹脂を用い、支持基板１上に基板に対して垂直方向に磁
化を有する垂直磁化膜から成る光磁気記録層２を形成し
たものである。光磁気記録層としてはMnBi,MnCuBi,MnTi
Bi,MnAlGe,PtCoなどの結晶体磁性薄膜、あるいはGd,Tb,
Dy,Hoなどの希土類とFe,Co,Niなどの遷移金属との合金
として得られるアモルファス磁性薄膜が知られている。
また、第２図に示したように、支持基板１に深さ６００
〜1000Å周期1.6〜2.5μｍの溝を同心円状もしくはうず
巻き状に形成し、前記支持基板１上に光磁気記録層２を
形成した媒体構成も知られている。ここで形成されてい
る溝は、記録媒体への情報の記録、あるいは再生・消去
に用いるレーザー集光ビームのトラッキングアクセスに
用いられるものである。また、第３図に示したように、
第２図と同様の支持基板１上に光磁気記録層のカー回転
角増幅用に誘電体などの干渉層３を設け、前記干渉層３
の上に光磁気記録層２を形成した媒体構成も知られてい
る。The configuration of a conventionally known magneto-optical recording medium is as shown in FIG. 1, in which glass or an organic resin is used as the supporting substrate 1, and the perpendicular magnetization having the magnetization in the direction perpendicular to the substrate is used on the supporting substrate 1. The magneto-optical recording layer 2 made of a film is formed. MnBi, MnCuBi, MnTi as the magneto-optical recording layer
Bi, MnAlGe, PtCo and other crystalline magnetic thin film, or Gd, Tb,
Amorphous magnetic thin films obtained as alloys of rare earths such as Dy and Ho and transition metals such as Fe, Co and Ni are known.
Also, as shown in FIG.
There is also known a medium structure in which grooves each having a period of 1000 Å 1.6 to 2.5 μm are formed concentrically or spirally, and the magneto-optical recording layer 2 is formed on the support substrate 1. The groove formed here is used for tracking access of a laser focused beam used for recording or reproducing / erasing information on a recording medium. Also, as shown in FIG.
An interference layer 3 such as a dielectric is provided on the supporting substrate 1 similar to that shown in FIG. 2 for amplifying the Kerr rotation angle of the magneto-optical recording layer.
A medium structure in which the magneto-optical recording layer 2 is formed on the above is also known.
従来より知られている支持基板上への溝形成方法は、有
機物樹脂（たとえば、ポリメチルメタクリレート，ポリ
カーボネート、エポキシ）においては、金属金型を用い
たスタンパ成形法，インジェクション成型法が用いられ
る。また、ガラス基板を用いる場合には、第４図のよう
に、ガラス基板４上に設けたフォトレジストなどの有機
物層５により溝を形成する方法が用いられる。As a conventionally known method for forming a groove on a supporting substrate, a stamper molding method using a metal mold and an injection molding method are used for an organic resin (for example, polymethylmethacrylate, polycarbonate, epoxy). When a glass substrate is used, as shown in FIG. 4, a method of forming a groove with an organic material layer 5 such as a photoresist provided on the glass substrate 4 is used.
しかしながら溝が形成された有機物樹脂を基板として用
いた場合、基板の熱変形温度がポリメチルメタクリレー
トでは約８０℃、ポリカーボネートでは約１４０℃と低
いために、光磁気記録層として、多元の希土類遷移金属
合金アモルファス薄膜を形成するときに用いるＲＦスパ
ッタ成膜法は使用できないという欠点がある。すなわ
ち、ＲＦスパッタでは基板温度が２００℃近くまで上昇
するために成膜中に基板が変形してしまうのである。ま
た、他の成膜法によって光磁気記録層を形成したとして
も有機物樹脂基板は吸水性，通気性に富むために、水分
や大気に弱い光磁気記録層に対しては保護層になり得
ず、他に保護層が必要であるという欠点を持っている。However, when an organic resin having a groove is used as a substrate, the heat deformation temperature of the substrate is as low as about 80 ° C. for polymethylmethacrylate and about 140 ° C. for polycarbonate. Therefore, as a magneto-optical recording layer, a multi-element rare earth transition metal is used. There is a drawback that the RF sputtering film forming method used when forming an alloy amorphous thin film cannot be used. That is, in RF sputtering, since the substrate temperature rises to near 200 ° C., the substrate is deformed during film formation. Even if the magneto-optical recording layer is formed by another film forming method, since the organic resin substrate is highly water-absorbing and air-permeable, it cannot be a protective layer for a magneto-optical recording layer that is vulnerable to moisture and air. Another drawback is the need for a protective layer.
また、ガラス基板上に形成した有機物層による溝におい
ては、有機物樹脂の溝同様、光磁気記録層形成時の温度
上昇により変形すること、有機物層からの溶剤残留ガス
が光磁気記録層の特性劣化を早めるという欠点を有して
いる。Also, in the groove formed by the organic layer on the glass substrate, like the groove of the organic resin, the groove is deformed by the temperature rise during the formation of the magneto-optical recording layer, and the solvent residual gas from the organic layer deteriorates the characteristics of the magneto-optical recording layer. It has the drawback of speeding up.
（発明の目的） 本発明の目的は、このような従来の欠点を除去せしめ
て、光磁気記録層作成時の基板温度上昇に対して強く、
また光磁気記録層の経時変化を抑え、レーザー光集光ビ
ームのトラックアクセス用の溝を有しさらには光磁気記
録層の力一回転角増幅機能を持つ新規な光磁気記録媒体
を提供することにある。(Object of the Invention) The object of the present invention is to eliminate such drawbacks of the related art and to be strong against a rise in the substrate temperature at the time of forming the magneto-optical recording layer,
Also, to provide a novel magneto-optical recording medium which suppresses the change with time of the magneto-optical recording layer, has a groove for track access of a focused beam of laser light, and further has a function for amplifying the force rotation angle of the magneto-optical recording layer. It is in.
（発明の構成） 本発明によれば、レーザー光を用いて情報の記録再生消
去をおこなう光磁気記録媒体において透明基板上に溝屈
折率材料による干渉層を設け、前記干渉層に同心円もし
くはうず巻き状の溝を形成し、さらに前記干渉層上に光
磁気記録層を設け、さらに前記光磁気記録層上に保護層
を設けたことを特徴とする光磁気記録媒体が得られる。(Structure of the Invention) According to the present invention, an interference layer made of a grooved refractive index material is provided on a transparent substrate in a magneto-optical recording medium for recording / reproducing / erasing information by using a laser beam, and the interference layer has a concentric or spiral shape. , A magneto-optical recording layer is further provided on the interference layer, and a protective layer is further provided on the magneto-optical recording layer.
（構成の詳細な説明） 本発明は上述の構成をとることにより、従来技術の問題
点を解決した。まず、透明基板としてはガラスが望し
く、また耐熱性のある高屈折率材料による干渉層に溝を
形成していることにより、光磁気記録層作成時の基板温
度上昇に対して強い。また、干渉層として用いる材料は
基板よりも屈折率が大きく、干渉層上に設けた光磁気記
録層の力−回転角を増幅する機能を有する。第５図は本
発明に係る光磁気記録媒体の形成手順を示したものであ
る。まず、第５図(a)のように光学研摩されたガラス基
板６上に干渉層７を真空蒸着法あるいはスパッタリング
法により形成する。干渉層７としては、ガラス基板より
も屈折率の大きいSiO,CeO2,ZrO2,TiO2,Bi2O3,WO2,SnO2,
Sb2O3,Al2O3,MgO,ThO2,La2O3,In2O3,Nd2O3などの酸化
物、AlN,Si3N4などの窒化物、ZnS,Sb2S3,CdSなどの硫化
物、ThF4,MgF2,LaF3,NdF3,CeF3,PbF2などのフッ化物、S
i,Geなどの半導体が使用される。次に、第５図(b)のよ
うに、干渉層７上にフォトレジスト８をスピン塗布す
る。つづいて、第５図(c)のように、レーザー光９によ
る直接露光あるいはフォトマスクを用いた一活露光をお
こない、現像処理後、第５図(d)のようなフォトレジス
トパターンを形成する。次に、Arイオンミリング法ある
いは反応性エッチング法によって干渉層７に第５図(e)
のような溝を形成し、つづいてＯ2ガス灰化処理により
フォトレジスト８を除去する（第５図(f)）。このあ
と、連続の真空蒸着あるいは、スパッタリングにより光
磁気記録層１０、保護層１１を形成する。（第５図
(g)）光磁気記録層１０としては既知のMnBi,MnCuBi,MnT
iBi,MnAlGe,PtCoなどの結晶性磁性薄膜、あるいはGd,T
b,Gy,Hoなどの希土類とFe,Co,Niなどの遷移金属との合
金として得られるアモルファス磁性薄膜が用いられ、１
０〜２００nmの膜厚に形成される。保護層１１は光磁気
記録層１０の保護のために積層されるものであり、たと
えばSiO2,SiO,Al2O3,ZrO2,TiO2,MgF2あるいはSiなどが
使用できる。(Detailed Description of Configuration) The present invention has solved the problems of the prior art by adopting the above configuration. First, glass is desired as the transparent substrate, and since a groove is formed in the interference layer made of a heat-resistant high-refractive index material, it is resistant to a rise in the substrate temperature when forming the magneto-optical recording layer. The material used for the interference layer has a larger refractive index than the substrate and has a function of amplifying the force-rotation angle of the magneto-optical recording layer provided on the interference layer. FIG. 5 shows a procedure for forming the magneto-optical recording medium according to the present invention. First, as shown in FIG. 5 (a), the interference layer 7 is formed on the glass substrate 6 which is optically polished by the vacuum deposition method or the sputtering method. As the interference layer 7, SiO, CeO 2 , ZrO 2 , TiO 2 , Bi 2 O 3 , WO 2 , SnO 2 , whose refractive index is larger than that of the glass substrate,
Sb 2 O 3 , Al 2 O 3 , MgO, ThO 2 , La 2 O 3 , In 2 O 3 , Nd 2 O 3 and other oxides, AlN, Si 3 N 4 and other nitrides, ZnS, Sb 2 S 3 , sulfides such as CdS, ThF 4 , MgF 2 , LaF 3 , NdF 3 , CeF 3 and fluorides such as PbF 2 , S
Semiconductors such as i and Ge are used. Next, as shown in FIG. 5B, a photoresist 8 is spin-coated on the interference layer 7. Then, as shown in FIG. 5 (c), direct exposure with laser light 9 or active exposure using a photomask is performed, and after development processing, a photoresist pattern as shown in FIG. 5 (d) is formed. . Next, the interference layer 7 is formed on the interference layer 7 by Ar ion milling or reactive etching as shown in FIG.
Then, the photoresist 8 is removed by O 2 gas ashing treatment (FIG. 5 (f)). After that, the magneto-optical recording layer 10 and the protective layer 11 are formed by continuous vacuum evaporation or sputtering. (Fig. 5
(g)) Known MnBi, MnCuBi, MnT as the magneto-optical recording layer 10.
Crystalline magnetic thin film such as iBi, MnAlGe, PtCo, or Gd, T
Amorphous magnetic thin films obtained as alloys of rare earths such as b, Gy and Ho and transition metals such as Fe, Co and Ni are used.
It is formed to a film thickness of 0 to 200 nm . The protective layer 11 is laminated for protection of the magneto-optical recording layer 10. For example, SiO 2 , SiO, Al 2 O 3 , ZrO 2 , TiO 2 , MgF 2 or Si can be used.
干渉層７に形成される溝の形状は、レジスト露光、現像
条件やArイオンミリング法あるいは反応性エッチング法
の条件設定により任意に決定できるが、溝深さは干渉層
の屈折率をｎとしたときλ／8nを満たすように選ばれ
る。ここでλはレーザー光の波長である。また、溝幅は
0.8〜1.5μｍ、溝ピッチは1.6〜2.5μｍに選ばれる。The shape of the groove formed in the interference layer 7 can be arbitrarily determined by the resist exposure, the developing condition, the Ar ion milling method, or the reactive etching method, and the groove depth is defined as the refractive index of the interference layer is n. Then, it is selected so as to satisfy λ / 8n. Here, λ is the wavelength of the laser light. The groove width is
The groove pitch is selected to be 0.8 to 1.5 μm and the groove pitch is selected to be 1.6 to 2.5 μm.
また、記録領域における干渉層の膜厚は光磁気記録層の
カー回転角を増幅できるように最適化される。The film thickness of the interference layer in the recording area is optimized so that the Kerr rotation angle of the magneto-optical recording layer can be amplified.
（実施例） 以下、本発明の実施例について図面を参照して説明す
る。第６図は本発明の適用された光磁気記録媒体の断面
図である。第６図において６はガラス基板、７はSiから
成る干渉層、１０はTbFeから成る光磁気記録層、１１は
Siから成る保護層である。第６図に示した光磁気記録媒
体は次の手順によって形成された。まず、厚さ1.2mm、
直径１２０mmの光学研磨されたガラス基板ディスク上に
高周波スパッタ法によりSiを750Å形成した。次にフォ
トレジストをSi形成後のディスク全面に1500Åの厚さで
スピン塗布しブリベーク後、Arレーザーカッティングシ
ステムを用いてうず巻状の溝パターンを直接露光した。
このときの溝幅は1.6μｍ、溝のピッチは2.5μｍとし
た。つづいてレジスト現像液を用いて現像後、ポストベ
ークをおこなった。(Example) Hereinafter, the Example of this invention is described with reference to drawings. FIG. 6 is a sectional view of a magneto-optical recording medium to which the present invention is applied. In FIG. 6, 6 is a glass substrate, 7 is an interference layer made of Si, 10 is a magneto-optical recording layer made of TbFe, and 11 is
It is a protective layer made of Si. The magneto-optical recording medium shown in FIG. 6 was formed by the following procedure. First, the thickness 1.2 mm ,
750 Å of Si was formed on the optically polished glass substrate disk having a diameter of 120 mm by the high frequency sputtering method. Next, a photoresist was spin-coated on the entire surface of the Si-formed disk with a thickness of 1500 Å, followed by a bake, and then a vortex-shaped groove pattern was directly exposed using an Ar laser cutting system.
At this time, the groove width was 1.6 μm and the groove pitch was 2.5 μm. Subsequently, post-baking was performed after development using a resist developer.
次にArイオンエッチング法を用いてレジストをマスクと
してSiを３５０Åエッチングした。Next, Si was subjected to 350Å etching using a resist as a mask by using an Ar ion etching method.
つづいて、ディスクをＯ2ガスプラズマアッシャーに入
れ、レジストの剥離をおこなったのち、再びディスクを
高周波スパッタ装置に入れ、５×１０-7Torr以下に排気
したあと、複合ターゲットを用いた高周波スパッタ法に
よりTbFe膜をSi上に1500Å成し、真空を破らずにつづけ
て高周波スパッタ法によりSi膜を2000Å形成した。Subsequently, the disc was put into an O 2 gas plasma asher to remove the resist, and then the disc was put into the high frequency sputtering apparatus again, and after exhausting to 5 × 10 −7 Torr or less, the high frequency sputtering method using the composite target was performed. A TbFe film was formed on Si by 1500 Å, and the Si film was formed on 2000 Å by the high frequency sputtering method without breaking the vacuum.
作成した光磁気記録媒体の記録再生特性は、光磁気記録
再生装置によって測定された。Si上に形成された溝から
は良好なトラッキング信号が得られ、また、Si層が干渉
層であることから、光磁気記録層の力−回転角は３〜４
倍に増幅され良好な記録再生特性が得られた。The recording / reproducing characteristics of the produced magneto-optical recording medium were measured by a magneto-optical recording / reproducing apparatus. A good tracking signal can be obtained from the groove formed on Si, and the force-rotation angle of the magneto-optical recording layer is 3 to 4 because the Si layer is an interference layer.
It was doubled and good recording and reproducing characteristics were obtained.
本発明の適用された他の実施例として第６図の干渉層７
と保護層１１としてAlNを用いた光磁気記録媒体を作成
した。まず、厚さ1.2mm、直径１２０mmの光学研磨され
たガラス基板ディスク上に高周波スパッタ法によってAl
Nを1270Å形成した。次に前記レジストパターン形成方
法と同一手法により、レジストパターンを作成した。つ
づいて反応性プラズマエッチング法を用いてレジストパ
ターンをマスクとしてAlNを470Åエッチングした。エッ
チングガスとしてCCl4＋Ｎ2混合ガスを使用した。As another embodiment to which the present invention is applied, the interference layer 7 of FIG.
A magneto-optical recording medium using AlN as the protective layer 11 was prepared. First, Al is formed on the optically polished glass substrate disk having a thickness of 1.2 mm and a diameter of 120 mm by the high frequency sputtering method.
N formed 1270Å. Next, a resist pattern was created by the same method as the resist pattern forming method. Then, using the reactive plasma etching method, AlN was etched by 470 Å using the resist pattern as a mask. A CCl 4 + N 2 mixed gas was used as an etching gas.
つづいてＯ2ガスプラズマアッシャーを用いてレジスト
を剥離したのち、再びディスクを高周波スパッタ装置に
入れ、５×１０-7Torr以下に排気し、まず、AlN膜上に
複合ターゲットを用いてTbFe膜を1500Å形成し、つづけ
てAlN膜を2000Å形成した。Subsequently, the resist was stripped off using an O 2 gas plasma asher, the disc was again placed in the high frequency sputtering device, and the disc was evacuated to 5 × 10 −7 Torr or less. First, the TbFe film was formed on the AlN film by using the composite target. 1500 Å was formed, and then 2000 Å of AlN film was formed.
以上の手順によって作成した光磁気記録媒体は前記実施
例と同様良好なトラッキング特性、記録再生特性を示し
た。The magneto-optical recording medium produced by the above procedure showed good tracking characteristics and recording / reproducing characteristics as in the above-mentioned embodiment.
（発明の効果） 以上、説明したように本発明によれば従来例と比較して
次のような効果がある。(Effect of the Invention) As described above, the present invention has the following effects as compared with the conventional example.
また耐熱性のある高屈折率材料からなる干渉層に溝を
形成しているので、光磁気記録層成膜時の温度上昇に対
して強く、光磁気記録層成膜方法の自由度が増す。Further, since the groove is formed in the interference layer made of a heat-resistant high-refractive index material, it is strong against a temperature rise at the time of forming the magneto-optical recording layer, and the degree of freedom of the magneto-optical recording layer forming method is increased.
基板上に形成した高屈折材料は屈折率が基板材料に比
べて高いことから、基板側からレーザー光を入射する方
式において有効な干渉層になる。レーザ光アクセス領域
のこの干渉層の膜厚を最適化することにより、干渉層の
ない場合に比べて３〜４倍の力−回転角増幅効果が得ら
れ、信号再生Ｓ／Ｎが向上する。また記録感度も向上す
る。Since the high-refractive material formed on the substrate has a higher refractive index than the substrate material, it becomes an effective interference layer in the system in which laser light is incident from the substrate side. By optimizing the film thickness of this interference layer in the laser light access region, a force-rotation angle amplification effect of 3 to 4 times is obtained as compared with the case without the interference layer, and the signal reproduction S / N is improved. Also, the recording sensitivity is improved.
基板、干渉層ともに気密性があり、水分も通さないこ
とから基板側から光磁気記録層が劣化することがない。Since the substrate and the interference layer are both airtight and impermeable to moisture, the magneto-optical recording layer does not deteriorate from the substrate side.
このように本発明に係る光磁気記録媒体は成膜時の自由
度、記録再生特性に優れ、さらには耐候性に優れてい
る。Thus, the magneto-optical recording medium according to the present invention is excellent in the degree of freedom in film formation, recording / reproducing characteristics, and is also excellent in weather resistance.
第１図，第２図，第３図は、従来の光磁気記録媒体の断
面図、第４図は従来の光磁気記録媒体の溝形成時の断面
図、第５図は、本発明の係る光磁気記録媒体の形成手順
を示した断面図、第６図は本発明の一実施例の断面図で
ある。 図中１，４，６…基板、２，１０…光磁気記録層、３…
干渉層、５…有機物層、７…干渉層、８…フォトレジス
ト、９…レーザー光、１１…保護層である。1, 2, and 3 are cross-sectional views of a conventional magneto-optical recording medium, FIG. 4 is a cross-sectional view of a conventional magneto-optical recording medium when grooves are formed, and FIG. 5 is a cross-sectional view of the present invention. FIG. 6 is a sectional view showing a procedure for forming a magneto-optical recording medium, and FIG. 6 is a sectional view of an embodiment of the present invention. 1, 4, 6 ... Substrate, 2, 10 ... Magneto-optical recording layer, 3 ...
Interference layer, 5 ... Organic material layer, 7 ... Interference layer, 8 ... Photoresist, 9 ... Laser light, 11 ... Protective layer.
Claims (2)
おこなう光磁気記録媒体において平坦な透明基板上に高
屈折率材料からなる干渉層が設けられ、この干渉層に同
心円もしくはうず巻き状の溝が形成され、さらに、この
干渉層上に光磁気記録層、保護層がこの順に設けられて
いることを特徴とする光磁気記録媒体。1. A magneto-optical recording medium in which information is recorded / reproduced / erased by using a laser beam, an interference layer made of a high refractive index material is provided on a flat transparent substrate, and the interference layer has concentric or spiral grooves. And a magneto-optical recording layer and a protective layer are provided in this order on the interference layer.
前記ガラス基板材料より屈折率の大きい材料である特許
請求の範囲第１項記載の光磁気記録媒体。2. The magneto-optical recording medium according to claim 1, wherein the transparent substrate is glass, and the high refractive index material is a material having a refractive index higher than that of the glass substrate material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59150595A JPH0664763B2 (en) | 1984-07-20 | 1984-07-20 | Magneto-optical recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59150595A JPH0664763B2 (en) | 1984-07-20 | 1984-07-20 | Magneto-optical recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6129439A JPS6129439A (en) | 1986-02-10 |
| JPH0664763B2 true JPH0664763B2 (en) | 1994-08-22 |
Family
ID=15500313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59150595A Expired - Fee Related JPH0664763B2 (en) | 1984-07-20 | 1984-07-20 | Magneto-optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0664763B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07122940B2 (en) * | 1985-01-14 | 1995-12-25 | 株式会社リコー | Method for manufacturing magneto-optical recording medium |
| JP2506935B2 (en) * | 1988-05-16 | 1996-06-12 | 三菱化学株式会社 | Magneto-optical recording medium |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60175228A (en) * | 1984-02-20 | 1985-09-09 | Seiko Instr & Electronics Ltd | Substrate for optomagnetic disk |
-
1984
- 1984-07-20 JP JP59150595A patent/JPH0664763B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6129439A (en) | 1986-02-10 |
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