JPH0669055B2 - Probe needle for measuring electrical characteristics of semiconductor wafers - Google Patents
Probe needle for measuring electrical characteristics of semiconductor wafersInfo
- Publication number
- JPH0669055B2 JPH0669055B2 JP61123111A JP12311186A JPH0669055B2 JP H0669055 B2 JPH0669055 B2 JP H0669055B2 JP 61123111 A JP61123111 A JP 61123111A JP 12311186 A JP12311186 A JP 12311186A JP H0669055 B2 JPH0669055 B2 JP H0669055B2
- Authority
- JP
- Japan
- Prior art keywords
- transmission line
- dielectric substrate
- probe needle
- insulator
- parallel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Measuring Leads Or Probes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、半導体ウェーハ上のIC、LSI等の電気的特性
を測定する為のプローブ針に関する。TECHNICAL FIELD The present invention relates to a probe needle for measuring electrical characteristics of IC, LSI, etc. on a semiconductor wafer.
（従来の技術） 従来、第 図に示すウェーハ１上のIC、LSI等の電気的
特性を測定するのに、高い周波数領域でも電気的特性の
測定可能なプローブ針として、第６図に示す如く同軸ケ
ーブル３の先端中心に信号線４を突出し、同軸ケーブル
３の先端外周にグランド部を取付けてその尖端を信号線
４の尖端に平行に200μ程度接近させて成る同軸型プロ
ーブ針６を第７図の如く計測器７のＸ、Ｙ、Ｚ軸方向に
移動可能なアーム８にセットし、ウェーハ１上のIC、LS
I等のパッド２に接触させてパラメータを測定する方法
が採られている。(Prior Art) Conventionally, as shown in FIG. 6, a probe needle for measuring electrical characteristics of IC, LSI, etc. on the wafer 1 shown in FIG. The coaxial type probe needle 6 is formed by projecting the signal line 4 at the center of the tip of the coaxial cable 3, attaching a ground portion to the outer periphery of the tip of the coaxial cable 3, and bringing the tip thereof to approach the tip of the signal line 4 by about 200 μ in parallel. As shown in the figure, set it on the arm 8 that can move in the X, Y, and Z axis directions of the measuring instrument 7, and then set the IC and LS on the wafer 1.
A method of measuring the parameters by contacting the pad 2 such as I is adopted.
（発明が解決しようとする問題点） ところで、上記同軸型プローブ針６は、信号線４とグラ
ンド部が同軸ケーブル３の先端で数mmにわたって同軸構
造をとらない為、特性インピーダンスがその部分で変化
してしまい、高周波数領域での正確な電気的特性測定が
できなかった。また、この構造では多端子化が不可能で
あった。さらに、上記プローブ針６は、信号線４とグラ
ンド部がシールドされていないので、クロストーク、即
ち雑音が大きいという問題があった。(Problems to be solved by the invention) By the way, in the coaxial probe needle 6, since the signal line 4 and the ground portion do not have the coaxial structure over several mm at the tip of the coaxial cable 3, the characteristic impedance changes at that portion. As a result, accurate electrical characteristics cannot be measured in the high frequency region. In addition, it was impossible to realize multiple terminals with this structure. Further, the probe needle 6 has a problem that crosstalk, that is, noise is large because the signal line 4 and the ground portion are not shielded.
一方、近時IC、LSIは高密度、高速化の開発が進めら
れ、これに伴いこれらを評価するためのプローバとして
は、特性インピーダンスの安定化、多端子化、ウェーハ
上のパッドとの確実なコンタクト及びクロストークの低
減の図れるプローブ針を備えることが必要で、これの開
発が急がれている。On the other hand, recently, the development of high-density and high-speed ICs and LSIs has progressed, and along with this, as a prober for evaluating these, stable characteristic impedance, multiple terminals, and reliable padding on the wafer It is necessary to provide a probe needle capable of reducing contact and crosstalk, and the development of the probe needle is urgent.
そこで本発明は、特性インピーダンスの設定に対する安
定化、多端子化、確実なコンタクト及びクロストークの
低減を達成でき、高周波数領域で正確な電気的特性測定
をできるプローブ針を提供しようとするものである。Therefore, the present invention is intended to provide a probe needle that can achieve stabilization for setting characteristic impedance, multiple terminals, reliable contact and reduction of crosstalk, and that can accurately measure electrical characteristics in a high frequency region. is there.
（問題点を解決するための手段） 上記問題点を解決するための第１発明のプローブ針は、
誘電体基板上に、電送線路を複数列平行に設け、この各
伝送線路の先端部を上方に隆起させて該隆起部の下側の
誘電体基板との間に弾性体を充填し隆起部を接触部とな
し、この接触部を除いて少なくとも誘電体基板上に伝送
線路を挾んで絶縁体を接着し、少なくとも前記絶縁体の
上面に導電体を接合して成るものである。(Means for Solving Problems) A probe needle of the first invention for solving the above problems is
A plurality of transmission lines are provided in parallel on the dielectric substrate, and the tip of each transmission line is bulged upward, and an elastic body is filled between the ridge and the dielectric substrate below the ridge to form a ridge. A contact portion is formed by sandwiching a transmission line on at least a dielectric substrate excluding this contact portion and adhering an insulator thereto, and bonding a conductor to at least the upper surface of the insulator.
第２発明のプローブ針は、第１発明のプローブ針に於い
て、各伝送線路の両側にて誘電体基板上にグランド線路
を平行に設けたものである。A probe needle of a second invention is the probe needle of the first invention, in which ground lines are provided in parallel on a dielectric substrate on both sides of each transmission line.
第３発明のプローブ針は、第１発明のプローブ針に於い
て、左右両側端部長手方向に一定間隔にスルホールを穿
設し導電めっきを施して、絶縁体の上面及び誘電体基板
の下面の導電体を導通させたものである。A probe needle according to a third aspect of the present invention is the probe needle of the first aspect, in which through holes are formed at regular intervals in the longitudinal direction of both left and right end portions and conductive plating is performed to form an upper surface of the insulator and a lower surface of the dielectric substrate. The conductor is made conductive.
第４発明のプローブ針は、第３発明のプローブ針に於い
て、各伝送線路の両側にて誘電体基板上にグランド線路
を平行に設け、絶縁体の上面及び誘電体基板の下面の導
電体を導通させて成るものである。The probe needle of the fourth invention is the probe needle of the third invention, wherein ground lines are provided in parallel on the dielectric substrate on both sides of each transmission line, and conductors on the upper surface of the insulator and the lower surface of the dielectric substrate are provided. It is made by conducting.
（実施例） 第１発明のプローブ針の各種実施例を第１図によって説
明する。(Embodiment) Various embodiments of the probe needle of the first invention will be described with reference to FIG.
第１図ａに示すプローブ針10は、アルミナ（Al2O3）よ
り成る長さ40mm、幅10mm、厚さ0.6mmの誘電体基板11上
の長手方向に、厚さ３μ、幅150μのCuより成る伝送線
路12が200μの間隔を存して３列平行に設けられ、各伝
送線路12の先端部が側面台形状に屈曲成形されて高さ10
0μ隆起せしめられ、この隆起部13の下側の誘電体基板1
1との間には弾性体17、例えばポリイミドが充填され
て、隆起部13が接触部となっている。この接触部を除い
て誘電体基板11上には伝送線路12を挾んで厚さ100μの
アルミナより成る絶縁体15が接着され、その絶縁体15の
上面及び誘電体基板上11の下面に厚さ３μのCuより成る
導電体16が接合されて成るものである。The probe needle 10 shown in FIG. 1a is made of alumina (Al 2 O 3 ) and has a length of 40 mm, a width of 10 mm, and a thickness of 0.6 mm. The transmission lines 12 made up of 3 are arranged in parallel in three rows with a spacing of 200μ.
Dielectric substrate 1 below the raised portion 13 is raised by 0 μ.
An elastic body 17, for example, polyimide is filled between the ridge 1 and the ridge 1, and the raised portion 13 serves as a contact portion. Except for this contact portion, an insulator 15 made of alumina having a thickness of 100 μ is adhered across the transmission line 12 on the dielectric substrate 11, and a thickness is formed on the upper surface of the insulator 15 and the lower surface of the dielectric substrate 11. A conductor 16 made of Cu of 3 μ is joined.
次に第２発明のプローブ針の各種実施例を第２図によっ
て説明する。Next, various embodiments of the probe needle of the second invention will be described with reference to FIG.
第２図に示すプローブ針20は、第１図に示すプローブ針
10′の各伝送線路12間及びその両外側にて誘電体基板11
上に厚さ３μ、幅150μのCuより成るグランド線路19が
伝送線路12と200μの間隔を存して平行に設けられてい
るもので、その他の構成は第１図のプローブ針10′と同
一である。The probe needle 20 shown in FIG. 2 is the probe needle shown in FIG.
A dielectric substrate 11 is provided between each 10 'transmission line 12 and on both outsides thereof.
A ground line 19 made of Cu having a thickness of 3μ and a width of 150μ is provided in parallel with the transmission line 12 at a distance of 200μ, and the other configurations are the same as those of the probe needle 10 'shown in FIG. Is.
次いで第３発明のプローブ針の各種実施例を第３図によ
って説明する。Next, various embodiments of the probe needle of the third invention will be described with reference to FIG.
第３図に示すプローブ針22は、第１図に示すプローブ針
10′の左右両側端部長手方向に30mm間隔に直径1mmのス
ルホール23を穿設して、該スルホール23に銅めっきを施
し、上下両面の銅電体16を導通して成るものである。The probe needle 22 shown in FIG. 3 is the probe needle 22 shown in FIG.
Through holes 23 having a diameter of 1 mm are formed at intervals of 30 mm in the longitudinal direction of both left and right ends of 10 ', and copper plating is applied to the through holes 23 to electrically connect the copper electric bodies 16 on both upper and lower sides.
次に第４発明のプローブ針の各種実施例を第４図によっ
て説明する。Next, various embodiments of the probe needle of the fourth invention will be described with reference to FIG.
第４図に示すプローブ針25は、第３図に示すプローブ針
22の伝送線路12間及びその両外側にて誘電体基板11上に
厚さ３μ、幅150μのCuより成るグランド線路19が伝送
線路12と200μの間隔を存して平行に設けられているも
ので、その他の構成は第３図のプローブ針22と同一であ
る。The probe needle 25 shown in FIG. 4 is the probe needle shown in FIG.
A ground line 19 made of Cu having a thickness of 3μ and a width of 150μ is provided in parallel with the transmission line 12 at a distance of 200μ between the 22 transmission lines 12 and both sides thereof on the dielectric substrate 11. The other structure is the same as that of the probe needle 22 shown in FIG.
上述の如く本発明の各プローブ針10、20、22、25は、誘
電体基板11上に伝送線路12が３列平行に設けられている
ので、伝送線路12はストリップ線路構造となっていて、
伝送線路12の特性インピーダンスには変化は無く、どの
部分でも一定である。そこで実施例のプローブ針、例え
ば第１図のプローブ針10を第５図に示す如く計測器７の
Ｘ、Ｙ、Ｚ軸方向に移動可能なアーム８にセットし、ウ
ェーハ上のIC、LSI等のパッド２に接触させて、電気的
特性を測定したところ、高周波数領域で、本例では30GH
zの高周波数で正確に電気的特性を測定できた。また、
この測定を繰り返し行っても、各伝送線路12の先端部に
は隆起部13が設けられ、その下側には弾性材17が充填さ
れて、隆起部13が弾性変形できるようにしてあるので、
前記電気的特性測定において、測定するウェーハ１上の
IC、LSI等のパッド２と接触した際、各伝送線路12の接
触部は潰れることが無く、常に確実に安定して接触す
る。さらに、誘電体基板11上の各伝送線路12は絶縁体15
に挾まれて、電気的にシールドされているので、外部か
らのノイズが低減され、しかも各伝送線路12間のクロス
トークが低減される。また、導電体16が絶縁体15の上
面、絶縁体15の上面と誘電体基板11の下面、絶縁体15と
誘電体基板11の重合状態における同面等に接合されて、
導電層が少なくとも二層形成されているので、特性イン
ピーダンスの設定に対し著しく安定する。特に絶縁体15
の上面と誘電体基板11の下面の導電体16をスルホール23
により導通した第３発明及び第４発明の場合は、特性イ
ンピーダンスの設定は極立って安定する。さらに、誘電
体基板11上の各伝送線路12間及びその外側にグランド線
路19を設けた第２発明及び第４発明の場合は、各伝送線
路12間がシールドされてクロストークが一層低減され、
雑音は殆んど生じない。As described above, in each of the probe needles 10, 20, 22, 25 of the present invention, the transmission lines 12 are provided in parallel in three columns on the dielectric substrate 11, so the transmission lines 12 have a strip line structure.
The characteristic impedance of the transmission line 12 does not change and is constant in any part. Therefore, the probe needle of the embodiment, for example, the probe needle 10 of FIG. 1 is set on the arm 8 movable in the X, Y, and Z axis directions of the measuring instrument 7 as shown in FIG. When the electrical characteristics were measured by contacting with the pad 2 of the
The electrical characteristics could be measured accurately at the high frequency of z. Also,
Even if this measurement is repeated, a ridge 13 is provided at the tip of each transmission line 12, and an elastic material 17 is filled under the ridge 13, so that the ridge 13 can be elastically deformed.
On the wafer 1 to be measured in the electrical characteristic measurement
When contacting the pad 2 of an IC, LSI or the like, the contact portion of each transmission line 12 is not crushed, and always makes a stable contact. Furthermore, each transmission line 12 on the dielectric substrate 11 is an insulator 15
Since it is sandwiched between and is electrically shielded, noise from the outside is reduced, and moreover, crosstalk between the transmission lines 12 is reduced. Further, the conductor 16 is bonded to the upper surface of the insulator 15, the upper surface of the insulator 15 and the lower surface of the dielectric substrate 11, the same surface of the insulator 15 and the dielectric substrate 11 in a superposed state, and the like.
Since at least two conductive layers are formed, it is extremely stable against the setting of the characteristic impedance. Especially insulator 15
Of the conductor 16 on the upper surface of the dielectric substrate 11 and the lower surface of the dielectric substrate 11
In the case of the third invention and the fourth invention in which the conduction is caused by, the setting of the characteristic impedance is extremely stable. Further, in the case of the second invention and the fourth invention in which the ground line 19 is provided between the transmission lines 12 on the dielectric substrate 11 and outside thereof, the transmission lines 12 are shielded to further reduce crosstalk,
There is almost no noise.
尚、上記各実施例のプローブ針の誘電体基板11は、アル
ミナより成るが、石英でも良いものである。また、上記
各実施例では伝送線路12が３列であるが、これに限るも
のではなく、３列以上何列でも良いもので、数10列、数
100列の場合もある。さらに、絶縁体はアルミナとポリ
イミドの混合体より成るものでも良い。また、導電体16
上には必要に応じAuめっきを施しても良いものである。The dielectric substrate 11 of the probe needle in each of the above embodiments is made of alumina, but may be made of quartz. Further, although the transmission line 12 has three columns in each of the above embodiments, it is not limited to this, and any number of columns of three or more may be used.
There may be 100 rows. Further, the insulator may be made of a mixture of alumina and polyimide. In addition, the conductor 16
If necessary, Au plating may be applied on the top.
（発明の効果） 以上の説明で判るように本発明のプローブ針は、誘電体
基板上に、伝送線路を複数列平行に設けたものであるか
ら、伝送線路はストリップ線路構造となっている。従っ
て、特性インピーダンスの設定を安定化させることがで
き、また、各伝送線路はどの部分でも特性インピーダン
スを一定化でき、さらに複数列の伝送線路によって多端
子化が実現できる。その上、本発明のプローブ針は、各
伝送線路の先端部の接触部である隆起部が弾性変形する
ので、測定するウェーハ上のIC、LSI等のパッドに接触
しても潰れることが無く、常に確実に安定して接触す
る。また各伝送線路は絶縁体に挾まれたり伝送線路間や
その外側にグランド線路が設けられたりしているので、
各伝送線路は電気的にシールドされて、外部からのノイ
ズが低減され、しかも各伝送線路間のクロストークが低
減され雑音が大幅に低減される。また、導電体が少なく
とも絶縁体の上面に接合されて、導電層が形成されてい
るので、特性インピーダンスの設定が著しく安定する。
とりわけ、上下両面に導電体が接合され、スルホールめ
っきにて導通されている場合は、特性インピーダンスの
設定は極立って安定する。かくして、高密度、高速化さ
れる半導体ウェーハ上のIC、LSI等のの高周波数領域で
の電気的特性の測定を正確、確実に安定して行うことが
できる。(Effects of the Invention) As can be seen from the above description, since the probe needle of the present invention has the transmission lines provided in parallel in a plurality of columns on the dielectric substrate, the transmission line has a strip line structure. Therefore, the setting of the characteristic impedance can be stabilized, the characteristic impedance can be made constant in any part of each transmission line, and a multi-terminal can be realized by a plurality of lines of transmission lines. In addition, the probe needle of the present invention, since the ridge that is the contact portion of the tip of each transmission line is elastically deformed, IC on the wafer to be measured, without being crushed even when contacting a pad such as LSI, Always make sure stable contact. Also, since each transmission line is sandwiched between insulators, and ground lines are provided between the transmission lines and outside it,
Each transmission line is electrically shielded, noise from the outside is reduced, crosstalk between the transmission lines is reduced, and noise is significantly reduced. Further, since the conductor is bonded to at least the upper surface of the insulator to form the conductive layer, the setting of the characteristic impedance is remarkably stable.
In particular, when the conductors are joined to the upper and lower surfaces and are conducted by the through-hole plating, the characteristic impedance setting is extremely stable. Thus, it is possible to accurately, reliably, and stably measure the electrical characteristics of a high-density, high-speed semiconductor wafer such as IC and LSI on a high frequency region.
第１図は本発明による第１発明の実施例を示す斜視図、
第２図は本発明による第２発明の実施例を示す斜視図、
第３図は本発明による第３発明の実施例を示す斜視図、
第４図は本発明による第４発明の実施例を示す斜視図、
第５図は第１図のプローブ針の使用状態を示す概略図、
第６図は従来の同軸型プローブ針の斜視図、第７図は第
６図の同軸型プローブ針の使用状態を示す概略図であ
る。FIG. 1 is a perspective view showing an embodiment of the first invention according to the present invention,
FIG. 2 is a perspective view showing an embodiment of the second invention according to the present invention,
FIG. 3 is a perspective view showing an embodiment of the third invention according to the present invention,
FIG. 4 is a perspective view showing an embodiment of the fourth invention according to the present invention,
FIG. 5 is a schematic view showing a usage state of the probe needle of FIG.
FIG. 6 is a perspective view of a conventional coaxial probe needle, and FIG. 7 is a schematic view showing a usage state of the coaxial probe needle of FIG.
Claims (4)
設け、この各伝送線路の先端部を上方に隆起させて該隆
起部の下側の誘電体基板との間に弾性材を充填して隆起
部を接触部となし、この接触部を除いて少なくとも誘電
体基板上に伝送線路を挾んで絶縁体を接着し、少なくと
も前記絶縁体の上面に導電体を接合して成る半導体ウェ
ーハの電気的特性測定用プローブ針。1. A transmission line is provided in parallel in a plurality of rows on a dielectric substrate, and the tip of each transmission line is raised upward so that an elastic material is provided between the transmission line and the dielectric substrate below the raised portion. A semiconductor wafer obtained by filling a raised part as a contact part, sandwiching a transmission line on at least a dielectric substrate except for this contact part and adhering an insulator, and bonding a conductor to at least the upper surface of the insulator. Probe needle for measuring electrical characteristics of.
設け、この各伝送線路の先端部を上方に隆起させて該隆
起部の下側の誘電体基板との間に弾性材を充填して隆起
部を接触部となし、前記各伝送線路の両側にて誘電体基
板上にグランド線路を平行に設け、前記接触部を除いて
少なくとも誘電体基板上に伝送線路及びグランド線路を
挾んで絶縁体を接着し、少なくとも前記絶縁体の上面に
導電体を接合して成る半導体ウェーハの電気的特性測定
用プローブ針。2. A transmission line is provided in parallel in a plurality of rows on a dielectric substrate, and the tip end of each transmission line is bulged upward so that an elastic material is provided between the transmission line and the dielectric substrate below the ridge. The ridges are filled to form contact portions, the ground lines are provided in parallel on the dielectric substrate on both sides of each transmission line, and the transmission line and the ground line are sandwiched at least on the dielectric substrate except for the contact portions. A probe needle for measuring the electrical characteristics of a semiconductor wafer, which is formed by adhering an insulating material and bonding a conductor to at least the upper surface of the insulating material.
設け、この各伝送線路の先端部を上方に隆起させて該隆
起部の下側の誘電体基板との間に弾性材を充填して隆起
部を接触部となし、前記接触部を除いて少なくとも誘電
体基板上に伝送線路を挾んで絶縁体を接着し、この絶縁
体の上面及び誘電体基板側の下面に導電体を接合し、左
右両側端部長手方向に一定間隔にスルホールを穿設し導
電めっきを施して上下両面の導電シートを導通させて成
る半導体ウェーハの電気的特性測定用プローブ針。3. A transmission line is provided in parallel in a plurality of rows on a dielectric substrate, and the tip of each transmission line is raised upward so that an elastic material is provided between the transmission line and the dielectric substrate below the raised portion. The ridge is filled to form a contact portion, and an insulator is adhered by sandwiching the transmission line on at least the dielectric substrate except for the contact portion, and a conductor is provided on the upper surface of this insulator and the lower surface on the side of the dielectric substrate. A probe needle for measuring electric characteristics of a semiconductor wafer, which is formed by joining through holes, forming through-holes at regular intervals in the longitudinal direction of both left and right ends, and conducting plating to make conductive sheets on both upper and lower sides conductive.
設け、この各伝送線路の先端部を上方に隆起させて該隆
起部の下側の誘電体基板との間に弾性材を充填して隆起
部を接触部となし、前記各伝送線路の両側にて誘電体基
板上にグランド線路を平行に設け、前記接触部を除いて
少なくとも誘電体基板上に伝送線路及びグランド線路を
挾んで絶縁体を接着し、この絶縁体の上面及び誘電体基
板側の下面に導電体を接合し、左右両側端部長手方向に
一定間隔にスルホールを穿設し導電めっきを施して上下
両面の導電シートを導通させて成る半導体ウェーハの電
気的特性測定用プローブ針。4. A transmission line is provided in parallel in a plurality of rows on a dielectric substrate, and the tip end of each transmission line is bulged upward so that an elastic material is provided between the transmission line and the dielectric substrate below the ridge. The ridges are filled to form contact portions, the ground lines are provided in parallel on the dielectric substrate on both sides of each transmission line, and the transmission line and the ground line are sandwiched at least on the dielectric substrate except for the contact portions. Then, attach an insulator to the upper surface of this insulator and the lower surface on the side of the dielectric substrate, and then bond a conductor to the bottom surface of the left and right ends. A probe needle for measuring electrical characteristics of a semiconductor wafer, which is formed by connecting sheets.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61123111A JPH0669055B2 (en) | 1986-05-28 | 1986-05-28 | Probe needle for measuring electrical characteristics of semiconductor wafers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61123111A JPH0669055B2 (en) | 1986-05-28 | 1986-05-28 | Probe needle for measuring electrical characteristics of semiconductor wafers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62279650A JPS62279650A (en) | 1987-12-04 |
| JPH0669055B2 true JPH0669055B2 (en) | 1994-08-31 |
Family
ID=14852447
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61123111A Expired - Lifetime JPH0669055B2 (en) | 1986-05-28 | 1986-05-28 | Probe needle for measuring electrical characteristics of semiconductor wafers |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0669055B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10282144A (en) * | 1997-04-07 | 1998-10-23 | Micronics Japan Co Ltd | Probe unit for testing flat test objects |
| US6281691B1 (en) | 1998-06-09 | 2001-08-28 | Nec Corporation | Tip portion structure of high-frequency probe and method for fabrication probe tip portion composed by coaxial cable |
| JP5219633B2 (en) * | 2008-06-05 | 2013-06-26 | 東京特殊電線株式会社 | High frequency measurement probe |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59141239A (en) * | 1983-01-31 | 1984-08-13 | Fujitsu Ltd | Prober for measuring integrated circuit |
| US4697143A (en) * | 1984-04-30 | 1987-09-29 | Cascade Microtech, Inc. | Wafer probe |
| JPS612338A (en) * | 1984-06-15 | 1986-01-08 | Hitachi Ltd | Inspection equipment |
| JPS6114389U (en) * | 1984-06-29 | 1986-01-28 | 日立電子エンジニアリング株式会社 | High frequency contact device |
-
1986
- 1986-05-28 JP JP61123111A patent/JPH0669055B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62279650A (en) | 1987-12-04 |
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