JPH0669914B2 - Metallizing composition - Google Patents
Metallizing compositionInfo
- Publication number
- JPH0669914B2 JPH0669914B2 JP60214102A JP21410285A JPH0669914B2 JP H0669914 B2 JPH0669914 B2 JP H0669914B2 JP 60214102 A JP60214102 A JP 60214102A JP 21410285 A JP21410285 A JP 21410285A JP H0669914 B2 JPH0669914 B2 JP H0669914B2
- Authority
- JP
- Japan
- Prior art keywords
- ceramic body
- nickel
- metal layer
- weight
- metallizing composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
Landscapes
- Ceramic Products (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明はセラミック体表面、特に炭化物系、窒化物系セ
ラミック体表面にメタライズ金属層を形成するためのメ
タライズ用組成物に関するものである。TECHNICAL FIELD The present invention relates to a metallizing composition for forming a metallized metal layer on the surface of a ceramic body, particularly on the surface of a carbide or nitride ceramic body.
（従来の技術） 従来、セラミック体と金属の接合は生もしくは焼結セラ
ミック体表面に、タングステン（Ｗ）、モリブデン−マ
ンガン（Mo−Mn）等の高融点金属粉末に有機バインダー
及び溶剤を添加し、ペースト状と成したものをスクリー
ン印刷により塗布し、これを還元雰囲気中で焼成して高
融点金属とセラミック体とを焼結一体化させ、メタライ
ズ金属層を被着させるとともに該メタライズ金属層上に
金属体をロウ材を介しロウ付けすることによって行われ
ている。(Prior Art) Conventionally, a ceramic body and a metal are joined together by adding an organic binder and a solvent to a refractory metal powder such as tungsten (W) or molybdenum-manganese (Mo-Mn) on the surface of a raw or sintered ceramic body. , A paste form is applied by screen printing, and this is fired in a reducing atmosphere to sinter and integrate the refractory metal and the ceramic body, deposit the metallized metal layer, and deposit the metallized metal layer on the metallized metal layer. It is carried out by brazing a metal body to the metal via a brazing material.
（発明が解決しようとする問題点） しかし乍ら、この従来のタングステン（Ｗ）、モリブデ
ン−マンガン（Mo−Mn）等を使用したメタライズ金属層
はアルミナ（Al2O3）に代表される酸化物系セラミック
体にしか被着せず、炭化珪素（SiC）や窒化珪素（Si
3N4）に代表される炭化物系セラミック体や窒化物系セ
ラミック体には被着しないことから被着されるセラミッ
ク体の材質に大きな制約を受けるという欠点を有してい
た。(Problems to be Solved by the Invention) However, the conventional metallized metal layer using tungsten (W), molybdenum-manganese (Mo-Mn), etc. is an oxide represented by alumina (Al 2 O 3 ). It adheres only to the material-based ceramic body, and it does not adhere to silicon carbide (SiC)
3 N 4 ), which does not adhere to a carbide-based ceramic body or a nitride-based ceramic body represented by 3 N 4 ), has a drawback that the material of the deposited ceramic body is greatly restricted.
（発明の目的） 本発明者等は上記欠点に鑑みて種々の実験の結果、チタ
ンもしくはその水素化物と、ニッケルもしくはニッケル
を主成分とする合金との共晶物は酸化物系、炭化物系及
び窒化物系のすべてのセラミックに対して活性があり、
強固に接合することを知見した。(Object of the Invention) The inventors of the present invention have conducted various experiments in view of the above-mentioned drawbacks. As a result, the eutectic of titanium or its hydride and nickel or an alloy containing nickel as a main component is oxide-based, carbide-based, or Active against all nitride-based ceramics,
We have found that they are joined firmly.
本発明は上記知見に基づき、酸化物系、炭化物系及び窒
化物系のすべてのセラミック体にメタライズ金属層を被
着形成することができるメタライズ用組成物を提供する
ことをその目的とするものである。It is an object of the present invention to provide a metallizing composition capable of depositing a metallized metal layer on all oxide-based, carbide-based and nitride-based ceramic bodies based on the above findings. is there.
本発明のメタライズ用組成物はセラミック体表面に金属
を接合して成る部品、具体的には外部リード端子が多数
ロウ付けされてなる半導体パッケージや電気回路配線基
板等において、外部リード端子をロウ付けするためのメ
タライズ金属層の形成に好適に使用される。The composition for metallization of the present invention is a component formed by joining a metal to the surface of a ceramic body, specifically, in a semiconductor package or an electric circuit wiring board in which a large number of external lead terminals are brazed, the external lead terminals are brazed. It is preferably used for forming a metallized metal layer for
（問題点を解決するための手段） 本発明のメタライズ用組成物はチタンもしくはその水素
化物50乃至80重量％と、ニッケルもしくはニッケルを主
成分とする合金20乃至50重量％とから成ることを特徴と
するものである。(Means for Solving Problems) The metallizing composition of the present invention is characterized by comprising 50 to 80% by weight of titanium or a hydride thereof and 20 to 50% by weight of nickel or an alloy containing nickel as a main component. It is what
本発明のメタライズ用組成物においてはチタンもしくは
その水素化物の量が50重量％未満あるいは80重量％以
上、ニッケルもしくはニッケルを主成分とする合金の量
が20重量％未満あるいは50重量％以上となると融点が約
1700℃のチタンもしくは融点が約1400℃のニッケルの量
が大となってメタライズ用組成物の溶融温度が約1400℃
以上の極めて高いものとなり、一般の焼成温度（約1000
〜1200℃）ではメタライズ金属層をセラミック体に強固
に接合できなくなる。In the metallizing composition of the present invention, the amount of titanium or its hydride is less than 50% by weight or 80% by weight or more, and the amount of nickel or an alloy containing nickel as a main component is less than 20% by weight or 50% by weight or more. Melting point approx.
The amount of titanium at 1700 ° C or nickel having a melting point of about 1400 ° C becomes large, and the melting temperature of the metallizing composition is about 1400 ° C.
The above is extremely high, and the general firing temperature (about 1000
At ~ 1200 ° C), the metallized metal layer cannot be firmly bonded to the ceramic body.
よって、本発明のメタライズ用組成物においてはチタン
もしくはその水素化物の量は50乃至80重量％の範囲に、
またニッケルもしくはニッケルを主成分とする合金の量
は20乃至50重量％の範囲に特定される。Therefore, in the metallizing composition of the present invention, the amount of titanium or its hydride is in the range of 50 to 80% by weight,
The amount of nickel or an alloy containing nickel as a main component is specified in the range of 20 to 50% by weight.
本発明のメタライズ用組成物はチタンもしくはその水素
化物の粉末あるいは箔と、ニッケルもしくはニッケルを
主成分とする合金の箔とを重ね合わせ二層構造となすこ
とによってメタライズ用組成物として使用される。The metallizing composition of the present invention is used as a metallizing composition by stacking a powder or foil of titanium or its hydride and a foil of nickel or an alloy containing nickel as a main component to form a two-layer structure.
（実施例） 次に本発明を実施例に基づき説明する。(Example) Next, this invention is demonstrated based on an Example.
まず、チタン（Ti）もしくはその水素化物（TiH2）及び
ニッケル（Ni）もしくはニッケルを主成分とする合金
（例えばNi−Cr−Ｐ、Ni:75.9重量％、Cr:14.0重量％、
P:10.1重量％）の粉末及び箔を準備し、これを下表に示
すような組合せ、厚みでメタライズ用試料を得た。次に
これをアルミナ（Al2O3）、炭化珪素（SiC）、窒化珪素
（Si3N4）から成るセラミック体表面に直径5mmの円形状
に取着するとともに真空炉中、約1000〜1200℃の温度で
焼成し、セラミック体表面にメタライズ金属層を被着さ
せる。そして次に直径5mm、長さ20mmの表面にニッケル
（Ni）メッキを施したコバール（Fe−Ni−Co）もしくは
モリブデン（Mo）から成る円柱体を銀ロウを介してロウ
付けし、しかる後、コバールもしくはモリブデンの円柱
体を垂直方向に引っ張り、単位面積当たりの接合強度を
調べた。First, titanium (Ti) or its hydride (TiH 2 ) and nickel (Ni) or an alloy containing nickel as a main component (for example, Ni-Cr-P, Ni: 75.9 wt%, Cr: 14.0 wt%,
(P: 10.1% by weight) powder and foil were prepared, and the metallization samples were obtained with the combinations and thicknesses shown in the table below. Next, this was attached in a circular shape with a diameter of 5 mm to the surface of a ceramic body made of alumina (Al 2 O 3 ), silicon carbide (SiC), and silicon nitride (Si 3 N 4 ) and in a vacuum furnace, about 1000-1200 It is fired at a temperature of ° C to deposit a metallized metal layer on the surface of the ceramic body. Then, a cylindrical body made of Kovar (Fe-Ni-Co) or molybdenum (Mo) with a diameter of 5 mm and a length of 20 mm plated on the surface of nickel (Ni) is brazed through a silver solder, and then, A Kovar or molybdenum columnar body was pulled in the vertical direction to examine the bonding strength per unit area.
尚、前記チタンもしくはその水素化物は粉末状のものを
使用する場合、その粒径を１〜５μｍに調整し、これに
有機バインダー及び溶剤を添加するとともに混練機で10
時間混練し、ペースト状となしてセラミック体表面に取
着した。When the powdered titanium or its hydride is used, its particle size is adjusted to 1 to 5 μm, an organic binder and a solvent are added thereto, and the mixture is mixed with a kneader at 10
The mixture was kneaded for a time to form a paste and attached to the surface of the ceramic body.
また試料番号18〜20は本発明品と比較するため比較試料
であり、従来一般に使用されているモリブデン−マンガ
ン（Mo−Mn）から成るメタライズ用組成物である。In addition, sample numbers 18 to 20 are comparative samples for comparison with the product of the present invention, and are conventionally commonly used molybdenum-manganese (Mo-Mn) metallizing compositions.
上記の結果を下表に示す。The above results are shown in the table below.
（発明の効果） 上記実験結果からも判るように従来のメタライズ用組成
物（Mo−Mn）を使用したメタライズ金属層はアルミナ
（Al2O3）には被着するものの炭化珪素（SiC）、窒化珪
素（Si3N4）には一切被着しないのに対し、本発明のメ
タライズ用組成物を使用したメタライズ金属層はアルミ
ナ（Al2O3）、炭化珪素（SiC）及び窒化珪素（Si3N4）
のいずれのセラミック体にも接合強度5Kg/mm2以上の強
度で被着する。 Conventional metallizing composition As can be seen from the above experimental results (Effect of the Invention) (Mo-Mn) metallized metal layer using the alumina (Al 2 O 3) in the silicon carbide that deposited (SiC), While it does not adhere to silicon nitride (Si 3 N 4 ) at all, the metallized metal layer using the composition for metallization of the present invention includes alumina (Al 2 O 3 ), silicon carbide (SiC) and silicon nitride (Si). 3 N 4 )
It is adhered to any of the ceramic bodies with a bonding strength of 5 kg / mm 2 or more.
特にチタンもしくはその水素化物60乃至75重量％、ニッ
ケルもしくはニッケルを主成分とする合金25乃至40重量
％から成るメタライズ用組成物を使用したメタライズ金
属層はその接合強度が10Kg/mm2以上と極めて強く、金属
をロウ付けるためのメタライズ金属層を形成するメタラ
イズ用組成物として好適である。Particularly, a metallized metal layer using a metallizing composition comprising titanium or its hydride 60 to 75% by weight and nickel or an alloy containing nickel as a main component 25 to 40% by weight has a bonding strength of 10 Kg / mm 2 or more. It is strong and suitable as a metallizing composition for forming a metallized metal layer for brazing metal.
したがって、本発明のメタライズ用組成物はセラミック
体に金属を接合して成る部品、具体的には外部リード端
子が多数ロウ付けされてなる半導体パッケージや電気回
路配線板等において外部リード端子をロウ付けするため
のメタライズ金属層の形成に極めて有用である。Therefore, the metallizing composition of the present invention is brazed with external lead terminals in a component formed by joining a metal to a ceramic body, specifically, in a semiconductor package or electric circuit wiring board in which a large number of external lead terminals are brazed. It is extremely useful for forming a metallized metal layer for
Claims (1)
ケルもしくはニッケルを主成分とする合金20乃至50重量
％とから成ることを特徴とするメタライズ用組成物。1. A metallizing composition comprising 50 to 80% by weight of titanium hydride and 20 to 50% by weight of nickel or an alloy containing nickel as a main component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60214102A JPH0669914B2 (en) | 1985-09-26 | 1985-09-26 | Metallizing composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60214102A JPH0669914B2 (en) | 1985-09-26 | 1985-09-26 | Metallizing composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6272585A JPS6272585A (en) | 1987-04-03 |
| JPH0669914B2 true JPH0669914B2 (en) | 1994-09-07 |
Family
ID=16650261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60214102A Expired - Fee Related JPH0669914B2 (en) | 1985-09-26 | 1985-09-26 | Metallizing composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0669914B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5789318A (en) * | 1996-02-23 | 1998-08-04 | Varian Associates, Inc. | Use of titanium hydride in integrated circuit fabrication |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6033280A (en) * | 1983-07-27 | 1985-02-20 | 株式会社日立製作所 | Metallized pastes and ceramic products |
| JPH0684058B2 (en) * | 1983-08-02 | 1994-10-26 | 株式会社東芝 | Method for metallizing ceramics and alloy foil for metallizing ceramics |
| JPS60100680A (en) * | 1983-11-07 | 1985-06-04 | Ibiden Co Ltd | Metallizing method for surface of silicon carbide sintered body and composition for metallization |
-
1985
- 1985-09-26 JP JP60214102A patent/JPH0669914B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6272585A (en) | 1987-04-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |