JPH0672914B2 - Driving method for superconducting magnetoresistive element - Google Patents
Driving method for superconducting magnetoresistive elementInfo
- Publication number
- JPH0672914B2 JPH0672914B2 JP63066664A JP6666488A JPH0672914B2 JP H0672914 B2 JPH0672914 B2 JP H0672914B2 JP 63066664 A JP63066664 A JP 63066664A JP 6666488 A JP6666488 A JP 6666488A JP H0672914 B2 JPH0672914 B2 JP H0672914B2
- Authority
- JP
- Japan
- Prior art keywords
- current
- magnetoresistive element
- magnetic field
- superconducting
- superconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- Measuring Magnetic Variables (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Description
【発明の詳細な説明】 <産業上の利用分野> 本発明は折り返しで無誘導形構成の超電導磁気抵抗素子
を交流などで駆動し、雑音磁界の影響を小さくする超電
導磁気抵抗素子の駆動方法に関するものである。TECHNICAL FIELD The present invention relates to a method for driving a superconducting magnetoresistive element that reduces the influence of a noise magnetic field by driving a superconducting magnetoresistive element having a folded back and non-inductive structure with an alternating current or the like. It is a thing.
<従来の技術> 従来は、磁気抵抗素子に磁性材料を用いたものが使用さ
れていた。又、最近粒界の特性から、比較的弱い磁界に
高い感度をもつセラミック超電導体磁気抵抗素子の発表
をした。この超電導体磁気抵抗素子は、印加磁界により
超電導体粒子の粒界の超電導状態を壊して、常電導の抵
抗をもたせるもので、弱い印加磁界に対して、急速な抵
抗増加を示した。<Prior Art> Conventionally, a magnetoresistive element using a magnetic material has been used. In addition, we recently announced a ceramic superconductor magnetoresistive element that has high sensitivity to a relatively weak magnetic field due to the characteristics of grain boundaries. This superconductor magnetoresistive element breaks the superconducting state of the grain boundaries of the superconductor particles by the applied magnetic field and has a resistance of normal conduction, and shows a rapid increase in resistance to a weak applied magnetic field.
<発明が解決しようとする問題点> 従来の、磁性体による磁気抵抗素子は、その素子に印加
した磁界と電流の相互作用により、その素子の抵抗値を
変化させるものであり、磁界が印加されないときも、そ
の素子が抵抗をもち、印加磁界が弱いときの抵抗増加が
非常に小さい欠点があった。又、印加磁界に対して方向
性をもっていた。これを改良するため、前に発表したセ
ラミック超電導磁気抵抗素子の形状及び駆動回路は第3
図のようになっていた。この第3図に於てセラミック超
電導磁気抵抗素子9は、細長い本体1に1対の電流電極
3と電圧電極4が設けられており、電流電極は直流電源
7に、電圧電極4は電圧計8に接続されている。<Problems to be Solved by the Invention> A conventional magnetoresistive element using a magnetic material changes the resistance value of the element due to the interaction between a magnetic field and a current applied to the element, and no magnetic field is applied. At that time, there was a defect that the element had resistance and the increase in resistance when the applied magnetic field was weak was very small. Also, it had directivity with respect to the applied magnetic field. In order to improve this, the shape and drive circuit of the previously announced ceramic superconducting magnetoresistive element is the third.
It looked like the figure. In FIG. 3, a ceramic superconducting magnetoresistive element 9 is provided with a pair of current electrodes 3 and voltage electrodes 4 on an elongated body 1. The current electrode is a DC power supply 7, and the voltage electrode 4 is a voltmeter 8. It is connected to the.
この第3図のように電源と電圧検出回路を接続し、印加
電流Iと印加磁界Hと変え、各印加電流毎に印加磁界の
強さと超電導磁気抵抗素子9の電圧電極間の抵抗Rの関
係を図にしたのが、第4図である。この第4図から分る
ように超電導磁気抵抗素子9の電極間を長く、又は、そ
の断面積を小さくすることにより、印加磁界Hの変化に
対応する素子抵抗の変化を大きくすることはできるが、
印加する電流Iの大きさにより、その素子9に発生する
抵抗の大きさが異なるためこの素子9を交流、又は変調
した電流で駆動することは不可能であった。As shown in FIG. 3, the power supply and the voltage detection circuit are connected to change the applied current I and applied magnetic field H, and the relationship between the strength of the applied magnetic field and the resistance R between the voltage electrodes of the superconducting magnetoresistive element 9 for each applied current. Is shown in FIG. As can be seen from FIG. 4, by increasing the distance between the electrodes of the superconducting magnetoresistive element 9 or decreasing the cross-sectional area thereof, it is possible to increase the change in the element resistance corresponding to the change in the applied magnetic field H. ,
It is impossible to drive the element 9 with an alternating current or a modulated current because the resistance generated in the element 9 varies depending on the magnitude of the applied current I.
本発明は、従来の磁気抵抗素子がもっていた、以上のよ
うな問題点を解消し、感度がよいこの素子を交流駆動な
どでS/N比を上げる超電導磁気抵抗素子の駆動方法を提
供するものである。The present invention provides a method for driving a superconducting magnetoresistive element, which solves the above problems that the conventional magnetoresistive element has, and which has a high sensitivity and which increases the S / N ratio by AC driving or the like. Is.
〈問題点を解決するための手段〉 セラミック超電導体などの臨界温度(Tc)の高い超電導
体で磁気抵抗効果をもったものを用いて薄膜化、又は、
厚膜化し、小型にしても精度よく流れる電流が互に逆に
なる磁気抵抗線条の対が隣接する、いわゆる無誘導構成
にすると、その超電導磁気抵抗素子は印加する電流の大
きさを変化しても、その素子に磁界で発生した抵抗特性
は変化しないことが分かった。従って、本発明は上記の
磁気抵抗素子に交流、又は、パルスあるいはその他の任
意の変調波形の電流を印加しても、その素子から印加電
流の強さに比例した電圧出力を得ることができるので、
変調電流に同期した電圧出力を得る方法により、雑音や
ドリフトの影響を受けることなく、セラミック超電導体
の従来の磁気抵抗素子と比較すると極めて高い感度で微
少な磁場の検出や測定を行なうことができる方法にな
る。<Means for solving the problem> Using a superconductor having a high critical temperature (Tc) such as a ceramic superconductor having a magnetoresistive effect to form a thin film, or
Even if the film is made thicker and the size is smaller, the current flowing with high precision will be reversed. However, it was found that the resistance characteristics of the element generated by the magnetic field did not change. Therefore, the present invention can obtain a voltage output proportional to the intensity of the applied current from the magnetoresistive element, even if an alternating current, or a pulse or any other current having a modulated waveform is applied to the element. ,
By the method of obtaining the voltage output synchronized with the modulation current, it is possible to detect and measure a very small magnetic field with extremely high sensitivity as compared with the conventional magnetoresistive element of ceramic superconductor without being affected by noise and drift. Be the way.
〈作 用〉 セラミックスなどの粒界により高い磁気感度をもつ超電
導磁気抵抗素子は測定する磁界の強さが一定でも、その
素子に流す電流を大きくすると、素子に発生する抵抗も
大きくなった。これは素子に流れる電流が作る磁界の素
子の抵抗発生に関連しているためで、本発明のように、
線状で隣接した対を構成する超電導磁気抵抗素子に、同
じ大きさの電流を、互に反対方向に流れるように接続す
れば、その素子で発生する磁場は相互に打消し合って、
素子は電流による磁場の影響を受けなくなるので、素子
は電流の大きさに関係なく、磁界の大きさに対し一定の
抵抗をもつことになる。従って、交流、又は、任意に変
調した電流を素子に流して、その電流に同期させて素子
電圧を検出し、磁界の測定を行なうことができる。<Operation> Superconducting magnetoresistive elements, which have high magnetic sensitivity due to grain boundaries such as ceramics, even when the strength of the magnetic field to be measured was constant, the resistance generated in the element also increased when the current passed through the element increased. This is because it is related to the generation of the resistance of the element of the magnetic field created by the current flowing through the element.
If currents of the same magnitude are connected so that they flow in opposite directions to the superconducting magnetoresistive elements that form a pair of adjacent linear elements, the magnetic fields generated by the elements cancel each other out,
Since the element is not affected by the magnetic field due to the current, the element has a constant resistance to the magnitude of the magnetic field regardless of the magnitude of the current. Therefore, it is possible to measure the magnetic field by passing an alternating current or an arbitrarily modulated current through the element, detecting the element voltage in synchronization with the current.
<実施例> 本発明の実施例を図面を参照しながら説明する。<Example> An example of the present invention will be described with reference to the drawings.
第1図が、本発明の一実施例を示したもので、超電導体
膜1は、図示しない基板の上に、Y−Ba−Cu−Oのセラ
ミック超電導体になるよう、その構成元素の硝酸塩を水
溶液にして、スプレーパイロリシス法で作製し、酸素雰
囲気中で熱処理して酸素組成比を調整した。作製した膜
の絶縁部2の超電体部を除去することにより、折り返し
構成のセラミック超電導磁気抵抗素子9を形成した。こ
の素子は外形が約5×10mmで、超電導体膜厚は約10μm
であった。FIG. 1 shows an embodiment of the present invention, in which a superconductor film 1 is formed on a substrate (not shown) so as to form a Y-Ba-Cu-O ceramic superconductor, a nitrate of its constituent elements. Was prepared as an aqueous solution by a spray pyrolysis method and heat-treated in an oxygen atmosphere to adjust the oxygen composition ratio. The ceramic superconducting magnetoresistive element 9 having a folded structure was formed by removing the superconductor portion of the insulating portion 2 of the produced film. This element has an outer shape of about 5 × 10 mm and a superconductor film thickness of about 10 μm.
Met.
この実施例では超電導体膜1にY−Ba−Cu−Oのセラミ
ック超電導体を用いたが、これ以外の超電導体にしても
よく、その膜作製もスパッタリングやCVDなどで作るこ
ともできる。作製した磁気抵抗素子9に、チタン(Ti)
の蒸着、又は銀ペーストなどで電流電極3と電圧電極4
を作りそれぞれ素子9へ電流Iを流す電流源5と、素子
に発生した電圧を測定する電圧計6に接続した。以上の
ように作製し、測定した特性の代表例をグラフにしたの
が第2図である。使用した超電導体の臨界温度(Tc)は
約90Kであり、温度は液体窒素温度(77K)で行った。こ
の図の、縦軸は素子9に発生した抵抗値であり横軸は印
加した磁界の強さである。In this embodiment, a Y-Ba-Cu-O ceramic superconductor is used for the superconductor film 1, but other superconductors may be used, and the film may be formed by sputtering or CVD. Titanium (Ti) was added to the manufactured magnetoresistive element 9.
Current electrode 3 and voltage electrode 4 by vapor deposition or silver paste
Were connected to a current source 5 for flowing a current I to the element 9 and a voltmeter 6 for measuring the voltage generated in the element. FIG. 2 is a graph showing a representative example of the characteristics produced and measured as described above. The critical temperature (Tc) of the superconductor used was about 90 K, and the temperature was liquid nitrogen temperature (77 K). In this figure, the vertical axis represents the resistance value generated in the element 9, and the horizontal axis represents the strength of the applied magnetic field.
この第2図に示した素子9の特性から分るように、その
抵抗値は素子に流れる電流に全く依存しない安定した特
性を示し、外部から印加した測定する磁界の強さによっ
て常に一定の抵抗を発生していた。As can be seen from the characteristics of the element 9 shown in FIG. 2, its resistance value shows stable characteristics that do not depend on the current flowing through the element at all, and the resistance value is always constant depending on the strength of the magnetic field to be measured applied from the outside. Was occurring.
第2図の測定範囲外の電流値、及び交流電流についても
測定したがこの図の抵抗値になった。The current value outside the measurement range in FIG. 2 and the alternating current were also measured, but the resistance values in this figure were obtained.
〈発明の効果〉 本発明においては、線条の折り返し構成で、隣接して互
いに電流方向が逆になる対から構成された無誘導構成の
超電導磁気抵抗素子に対し、交流又はその他の変調電流
を印加することとしているので、磁界に対し感度のよい
超電導体の特性を持ち、かつ流す電流の大きさにより発
生抵抗値は変化せず、従って、その素子に印加した交
流,パルス電流又はその他の変調電流に同期して電圧出
力を検出又は、同期増幅することができることとなり、
微弱な磁界S/N比よく高精度で測定することができる。<Effects of the Invention> In the present invention, the alternating current or other modulation current is applied to the superconducting magnetoresistive element of the non-inductive configuration, which is composed of the pair of linearly folded wires and whose current directions are opposite to each other. Since it is applied, it has characteristics of a superconductor that is sensitive to a magnetic field, and the generated resistance value does not change depending on the magnitude of the flowing current. Therefore, the AC, pulse current or other modulation applied to the element It will be possible to detect the voltage output in synchronization with the current, or to synchronously amplify,
Weak magnetic field S / N ratio can be measured with high accuracy.
第1図は本発明の一実施例の構成図、第2図は第1図の
実施例の特性図、第3図は従来の素子の実施例の斜視
図、第4図は第3図の特性図である。 1は超電導体膜、2は絶縁部、3は電流電極、4は電圧
電極、5は電流源、6は電圧計、7は直流電源、8は直
流電圧計、9は磁気抵抗素子、10は磁界である。FIG. 1 is a block diagram of an embodiment of the present invention, FIG. 2 is a characteristic view of the embodiment of FIG. 1, FIG. 3 is a perspective view of an embodiment of a conventional element, and FIG. 4 is a view of FIG. It is a characteristic diagram. 1 is a superconductor film, 2 is an insulating part, 3 is a current electrode, 4 is a voltage electrode, 5 is a current source, 6 is a voltmeter, 7 is a DC power supply, 8 is a DC voltmeter, 9 is a magnetoresistive element, and 10 is a magnetic field. Is.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭59−17175(JP,A) 実開 昭58−56980(JP,U) 実開 昭58−56981(JP,U) 実公 昭57−2891(JP,Y2) 実公 昭56−3610(JP,Y2) C.W.Chu,st al.,Phy sical Review Letter s,Vol.58,No.4,PP.405− 407(1987) ─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-59-17175 (JP, A) Actually opened 58-56980 (JP, U) Actually opened 58-56981 (JP, U) Actual-public Sho-57- 2891 (JP, Y2) S. 56-3610 (JP, Y2) C.I. W. Chu, st al. , Physical Review Letters, Vol. 58, No. 4, PP. 405-407 (1987)
Claims (1)
方向が逆になる対から構成された無誘導構成の超電導磁
気抵抗素子の電流端子に交流又は、その他の変調電流を
印加し、前記素子が発生する電圧出力を、前記印加電流
に同期させて検出することを特徴とする超電導磁気抵抗
素子の駆動方法。1. An alternating current or other modulation current is applied to a current terminal of a superconducting magnetoresistive element of a non-inductive structure, which is composed of a pair of linearly folded wires and whose current directions are opposite to each other. A method for driving a superconducting magnetoresistive element, characterized in that the voltage output generated by the element is detected in synchronization with the applied current.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63066664A JPH0672914B2 (en) | 1988-03-18 | 1988-03-18 | Driving method for superconducting magnetoresistive element |
| EP88312296A EP0323187B1 (en) | 1987-12-25 | 1988-12-23 | Superconductive magneto-resistive device |
| DE3888659T DE3888659T2 (en) | 1987-12-25 | 1988-12-23 | Superconducting magnetoresistive device. |
| US07/289,312 US5126667A (en) | 1987-12-25 | 1988-12-23 | Superconductive magneto-resistive device for sensing an external magnetic field |
| US07/593,898 US5227721A (en) | 1987-12-25 | 1990-10-05 | Superconductive magnetic sensor having self induced magnetic biasing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63066664A JPH0672914B2 (en) | 1988-03-18 | 1988-03-18 | Driving method for superconducting magnetoresistive element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01239488A JPH01239488A (en) | 1989-09-25 |
| JPH0672914B2 true JPH0672914B2 (en) | 1994-09-14 |
Family
ID=13322395
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63066664A Expired - Fee Related JPH0672914B2 (en) | 1987-12-25 | 1988-03-18 | Driving method for superconducting magnetoresistive element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0672914B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100890356B1 (en) * | 2009-01-14 | 2009-03-25 | 한밭대학교 산학협력단 | Curing Device of Conductive Paste |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS563610U (en) * | 1979-06-21 | 1981-01-13 | ||
| JPS572891U (en) * | 1980-06-04 | 1982-01-08 | ||
| JPS5856980U (en) * | 1981-10-12 | 1983-04-18 | 三洋電機株式会社 | magnetic detection device |
| JPS5856981U (en) * | 1981-10-12 | 1983-04-18 | 三洋電機株式会社 | magnetic detection device |
| JPS5917175A (en) * | 1982-07-20 | 1984-01-28 | Aisin Seiki Co Ltd | Detecting element of magnetic field for extremely low temperature |
-
1988
- 1988-03-18 JP JP63066664A patent/JPH0672914B2/en not_active Expired - Fee Related
Non-Patent Citations (1)
| Title |
|---|
| C.W.Chu,stal.,PhysicalReviewLetters,Vol.58,No.4,PP.405−407(1987) |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01239488A (en) | 1989-09-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |