JPH0680189B2 - Dry etching method - Google Patents
Dry etching methodInfo
- Publication number
- JPH0680189B2 JPH0680189B2 JP61213156A JP21315686A JPH0680189B2 JP H0680189 B2 JPH0680189 B2 JP H0680189B2 JP 61213156 A JP61213156 A JP 61213156A JP 21315686 A JP21315686 A JP 21315686A JP H0680189 B2 JPH0680189 B2 JP H0680189B2
- Authority
- JP
- Japan
- Prior art keywords
- dry etching
- gas
- etching
- aluminum
- etching method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001312 dry etching Methods 0.000 title claims description 15
- 238000000034 method Methods 0.000 title claims description 8
- 239000000460 chlorine Substances 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 15
- 229910000838 Al alloy Inorganic materials 0.000 claims description 8
- 229910003902 SiCl 4 Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 5
- 229910052801 chlorine Inorganic materials 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- -1 BCl 3 Chemical class 0.000 claims 1
- 150000001805 chlorine compounds Chemical class 0.000 claims 1
- 229910018125 Al-Si Inorganic materials 0.000 description 6
- 229910018520 Al—Si Inorganic materials 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、ドライエッチング方法に関し、特にアルミニ
ウムあるいは、アルミニウム合金膜のドライエッチング
方法に関するものである。The present invention relates to a dry etching method, and more particularly to a dry etching method for aluminum or aluminum alloy film.
従来、アルミニウムあるいはアルミニウム合金膜のエッ
チングには、BCl3,SiCl4などの塩素系化合物とCl2の混
合ガスを用いてドライエッチングされているが、オーバ
ーエッチングもこのガスで行っている。Conventionally, for etching an aluminum or aluminum alloy film, dry etching is performed using a mixed gas of chlorine-based compounds such as BCl 3 and SiCl 4 and Cl 2 , but overetching is also performed with this gas.
上述した従来のアルミニウムあるいはアルミニウム合金
膜のドライエッチング方法では、オーバーエッチング時
にClの供給量が多くなり、サイドエッチングが入るとい
う欠点がある。特に、マスクとなるフォトレジストパタ
ーンの面積が20％以下しかない様なエッチングでは非常
に大きいサイドエッチングが入る。The conventional dry etching method for the aluminum or aluminum alloy film described above has a drawback in that the amount of Cl supplied is increased during overetching and side etching occurs. In particular, when the area of the photoresist pattern serving as a mask is 20% or less, a very large side etching occurs.
上述した従来のドライエッチング方法に対して、本発明
はエッチングの終点までは、BCl3,SiCl4などの塩素系化
合物にCl2を混合したガスを用い、オーバーエッチング
時には、Cl2を添加しないガスでエッチングを行うとい
う独創的内容を有する。In contrast to the conventional dry etching method described above, the present invention uses a gas in which Cl 2 is mixed with a chlorine-based compound such as BCl 3 and SiCl 4 until the end point of etching, and a gas in which Cl 2 is not added during overetching. It has an original content of etching in.
本発明によれば、半導体基板上に成長したアルミニウム
あるいはアルミニウム合金膜を、BCl3,SiCl4,CCl4,CHCl
3などの塩素系化合物とCl2との混合ガスを用いて、フォ
トレジストをマスクに高速ドライエッチングを行う第１
のステップと、アルミニウムあるいはアルミニウム合金
膜のドライエッチングの終点検出後Cl2ガスを添加せず
塩素系化合物のガスでオーバーエッチングのためのドラ
イエッチングを行う第２のステップとの２ステップのエ
ッチングを有するドライエッチング方法を得る。According to the present invention, an aluminum or aluminum alloy film grown on a semiconductor substrate is formed into BCl 3 , SiCl 4 , CCl 4 , CHCl 3.
High-speed dry etching using a photoresist as a mask, using a mixed gas of chlorine-based compounds such as 3 and Cl 2 .
And a second step of performing dry etching for over-etching with a chlorine-based compound gas without adding Cl 2 gas after detecting the end point of dry etching of an aluminum or aluminum alloy film. Obtain a dry etching method.
次に、本発明について図面を参照して説明する。第１図
（ａ）〜（ｅ）は、本発明の一実施例の縦断面図であ
る。Next, the present invention will be described with reference to the drawings. 1 (a) to (e) are longitudinal sectional views of an embodiment of the present invention.
まず第１図（ａ）の半導体基板１上に形成されたCVD-Si
O2膜２上に、第１図（ｂ）のようにAl-Si（１％）膜３
をスパッタ法で1,1μｍ成長する。次に第１図（ｃ）の
ようにマスクとなるフォトレジスト４をパターニングし
た後、SiCl4＋Cl2ガス５を用いて、Al-Si（１％）膜３
の高速エッチングを行う。次に第１図（ｄ）のように、
Al-Si（１％）膜３のエッチング終点検出後、Cl2を添加
せず、SiCl4ガス６の単独ガスでオーバーエッチングを
行う。First, the CVD-Si formed on the semiconductor substrate 1 of FIG.
On the O 2 film 2, an Al-Si (1%) film 3 is formed as shown in FIG.
Is grown by sputtering to a thickness of 1,1 μm. Next, as shown in FIG. 1 (c), after patterning the photoresist 4 serving as a mask, an Al—Si (1%) film 3 is formed by using SiCl 4 + Cl 2 gas 5.
High speed etching. Next, as shown in FIG. 1 (d),
After the etching end point of the Al-Si (1%) film 3 is detected, over-etching is carried out with a single gas of SiCl 4 gas 6 without adding Cl 2 .
そして第１図（ｅ）のようなオーバーエッチング終了後
のAl-Si（１％）パターン７ができる。このように２ス
テップのエッチングを有している。Then, an Al-Si (1%) pattern 7 is formed after overetching as shown in FIG. 1 (e). Thus, it has a two-step etching.
以上説明したように本発明は、アルミニウムあるいはア
ルミニウム合金膜のエッチングにおいて、２スッテプの
ガス系を用い、特にオーバーエッチング時のCl供給をな
くすことで、高速かつサイドエッチイングがなくかつエ
ッチング残りがないという３つの効果を兼ね備えたドラ
イエッチング方法を提供できる。As described above, the present invention uses a 2-step gas system for etching an aluminum or aluminum alloy film, and by eliminating the supply of Cl particularly during overetching, there is no side etching and there is no etching residue. It is possible to provide a dry etching method that combines the three effects described above.
第１図（ａ）〜（ｅ）は、本発明の実施例の縦断面図で
ある。 １……半導体基板、２……CVD-SiO2膜、３……Al-Si
（１％）膜、４……フォトレジスト、５……SiCl4＋Cl2
ガス、６……SiCl4ガス、７……エッチング後のAl-Si
（１％）パターン1 (a) to 1 (e) are longitudinal sectional views of an embodiment of the present invention. 1 ... Semiconductor substrate, 2 ... CVD-SiO 2 film, 3 ... Al-Si
(1%) film, 4 …… photoresist, 5 …… SiCl 4 + Cl 2
Gas, 6 ... SiCl 4 gas, 7 ... Al-Si after etching
(1%) pattern
Claims (1)
いはアルミニウム合金膜を、BCl3,SiCl4,CCl4,CHCl3な
どの塩素系化合物とCl2との混合ガスを用いて、フォト
レジストをマスクにドライエッチングを行う第１のステ
ップと、前記アルミニウムあるいはアルミニウム合金膜
のドライエッチングの終点検出後Cl2ガスを添加せず前
記塩素系化合物のガスでオーバーエッチングのためのド
ライエッチングを行う第２のステップとを有することを
特徴とするドライエッチング方法。1. A photoresist is used as a mask for an aluminum or aluminum alloy film grown on a semiconductor substrate by using a mixed gas of chlorine-based compounds such as BCl 3 , SiCl 4 , CCl 4 , CHCl 3 and Cl 2. A first step of performing dry etching, and a second step of performing dry etching for over-etching with the chlorine compound gas without adding Cl 2 gas after detecting the end point of the dry etching of the aluminum or aluminum alloy film. A dry etching method comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61213156A JPH0680189B2 (en) | 1986-09-09 | 1986-09-09 | Dry etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61213156A JPH0680189B2 (en) | 1986-09-09 | 1986-09-09 | Dry etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6369988A JPS6369988A (en) | 1988-03-30 |
| JPH0680189B2 true JPH0680189B2 (en) | 1994-10-12 |
Family
ID=16634493
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61213156A Expired - Lifetime JPH0680189B2 (en) | 1986-09-09 | 1986-09-09 | Dry etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0680189B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5034092A (en) * | 1990-10-09 | 1991-07-23 | Motorola, Inc. | Plasma etching of semiconductor substrates |
| JP2009188038A (en) * | 2008-02-04 | 2009-08-20 | Sharp Corp | Semiconductor device and manufacturing method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60153130A (en) * | 1984-01-23 | 1985-08-12 | Toshiba Corp | Dry etching device for aluminum |
| JPS61147531A (en) * | 1984-12-21 | 1986-07-05 | Toshiba Corp | Reactive ion etching method |
-
1986
- 1986-09-09 JP JP61213156A patent/JPH0680189B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6369988A (en) | 1988-03-30 |
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