JPH069190B2 - Plasma processing device - Google Patents

Description

The present invention relates to a plasma processing apparatus such as a plasma CVD apparatus that processes a wafer using plasma.

(Prior Art) Generally, in a plasma processing apparatus such as a plasma CVD apparatus, high frequency power is applied between electrode plates to generate plasma, and the plasma is used to process a wafer.

FIG. 5 shows, as an example of such a conventional plasma processing apparatus, a plasma CVD apparatus for forming a CVD film on a wafer surface by using plasma. The plasma CVD apparatus is made of quartz or the like in a hollow cylindrical shape and has an opening 1a at one end. And the inside of the processing chamber 1 in which the gas inlet 1b and the gas outlet 1c are arranged on both sides,
A power supply terminal 2a made of an elastic member near the opening 1a,
2b are arranged and these power supply terminals 2a, 2b
Is connected to the high frequency power supply device 2. And
Wafers 3 are arranged in parallel to the respective surfaces, and a large number of disk-shaped electrode plates 4a arranged in parallel, and these electrode plates 4a.
Lead electrode 4 made of an elastic member electrically connected to
A plasma electrode 4 composed of b and 4c is placed on a boat 5 having wheels 5a at the bottom and loaded from an opening 1a.

Then, the power supply terminals 2a and 2b and the lead electrodes 4b and 4
c is elastically contacted to make an electrical connection, and the opening 1
The a is closed by the drive flange 6. After that, a predetermined reaction gas is circulated in the processing chamber 1 through the gas inlet 1b and the gas outlet 1c, and high-frequency power is applied between the high-frequency power supply device 2 and the electrode plate 4a to generate plasma in the processing chamber 1. And a CVD film is formed on the surface of the wafer 3.

(Problems to be Solved by the Invention) However, in the above-described conventional plasma processing apparatus, the lead electrode of the plasma electrode and the power supply terminal arranged in the processing chamber contact due to elasticity of the lead electrode and the power supply terminal. However, there is a problem in that the contact resistance of the contact portion increases, heat is generated, high-frequency power is attenuated, and the amount of plasma generated is reduced.

The present invention has been made in view of such conventional circumstances, and an object thereof is to provide a plasma processing apparatus capable of increasing the amount of plasma generated and performing processing efficiently.

[Structure of the Invention] (Means for Solving Problems) A door that hermetically closes the opening in the processing chamber, and at least one pair that is held by the door and is provided inside the processing chamber to hold the object to be processed. Boat having an electrode plate, a lead electrode connected to each of the electrode plates and applying high-frequency power between the electrode plates, and provided through the door through an insulating member, and the high-frequency power is treated as described above. It is characterized by comprising a power supply terminal for supplying the lead electrode from outside the room and a fixing mechanism for fixing the power supply terminal and the lead electrode for electrical connection.

(Operation) In the plasma processing apparatus of the present invention, a fixing mechanism for fixing the lead electrode and the power supply terminal to electrically connect the lead electrode and the power supply terminal to each other is arranged at the connection portion of the lead electrode of the plasma electrode and the power supply terminal. Therefore, the lead electrode and the power supply terminal can be surely connected, and the contact resistance of the connecting portion can be reduced.

Further, since the boat is held by the door, by supporting this door, the boat can be loaded / unloaded into / from the processing chamber while being in contact with the inner wall of the processing chamber, and dust that adversely affects semiconductor devices can be obtained. It is possible to prevent abrasion of the processing chamber without occurrence of Further, with such a structure, it is not necessary to frequently attach and detach the lead electrode and the power supply terminal, and it is possible to suppress dust generation and improve work efficiency.

(Examples) Examples of the plasma processing apparatus of the present invention will be described below with reference to the drawings.

FIG. 1 shows a plasma CVD apparatus as a plasma processing apparatus of an embodiment of the present invention. The plasma CVD apparatus of this embodiment is made of quartz or the like in a hollow cylindrical shape and has an opening 11a at one end. A processing chamber 11 having a gas inlet 11b and a gas outlet 11c on both sides is arranged,
The opening 11 a is configured to be closed by the door flange 12.

As shown in FIG. 2, at the end of the processing chamber 11 on the side of the opening 11a, two power supply terminals 14 each including an elastic member and a fixing mechanism including, for example, a screw 13 are provided.
Is provided.

A plurality of disk-shaped electrode plates 15b, which are provided with wafer holders 15a and are arranged in parallel at intervals, are provided on both sides of the electrode plates 15b with screw holes 13a screwed into the screws 13 at one end. A plasma electrode 1 which is configured to be held by a rod-shaped lead electrode 15c that is provided and electrically connected to the lead electrodes 15c on different sides every other electrode plate 15b.
The wafer 16 is placed on the wafer holder 15a of No. 5, and the plasma electrode 15 is made of quartz or the like and has a wheel 17 at the bottom.
It is mounted on the boat 17 having a and is loaded into the processing chamber 11 through the opening 11a.

After that, the lead electrode 15c is screwed into the screw hole 13a and the screw 1.
3 is fixed to the power supply terminal 14 and electrically connected, and when the opening 11a is closed and fixed by the door flange 12, the gas introduction port 11b and the gas discharge port 11c.
A predetermined reaction gas is circulated in the processing chamber 11 by the high-frequency power supply device 18, and the high-frequency power supply device 18 connects the power supply terminal 14 to the electrode plate 15b via the lead electrode 15c, for example, 13.56M
A high frequency power such as Hz is supplied to generate plasma and a CVD film is formed on the wafer 16. When heating is required, a heating device such as a heater is arranged around the processing chamber 11 to heat the inside of the processing chamber 11.

In the plasma processing apparatus of this embodiment described above, a screw for fixing and electrically connecting the lead electrode 15c and the power supply terminal 14 to the connecting portion of the lead electrode 15c of the plasma electrode 15 and the power supply terminal 14. Since the fixing mechanism including the screw holes 13a and the screw holes 13a is arranged, the lead electrode 15c and the power supply terminal 14 can be surely connected to each other, the contact resistance of the connection portion is reduced, and heat generation and high-frequency power are reduced. Can be prevented and the amount of plasma generated can be increased.

In the plasma processing apparatus of this embodiment, the fixing mechanism including the screw 13 and the screw hole 13a is arranged at the connecting portion between the lead electrode 15c and the power supply terminal 14, but the fixing mechanism uses the lead electrode 15c and the power supply. Any terminal may be used as long as it can fix the terminal 14.

FIG. 3 shows a plasma CVD apparatus according to another embodiment, in which the opening 11a of the processing chamber 11 having the same structure as that of the above-described embodiment has an arcuate cross section and is almost the entire length in the processing chamber 11. The boat 22 made of a quartz plate having the same length is closed by a fixed door flange 23.

Note that the boat 22 may be made of any substance as long as it is a substance that emits little dust and has temperature, chemical stability, and the like that meet each processing condition. It may have any shape such as a cylindrical rod.

Then, as shown in FIG. 4, the door flange 23 penetrates through the through hole 23a provided in the door flange 23 and is fixed through the insulator portion 23b. A power supply terminal 24 having a fixing mechanism 24a configured is provided.

A loading device 25 that holds the door flange 23 vertically and moves the door flange 23 in the longitudinal direction of the processing chamber 11 is arranged on the side of the opening 21a on the side of the processing chamber 11.

Then, the wafer 16 is placed on the wafer holder 15a of the plasma electrode 15 configured in the same manner as in the above-mentioned embodiment,
The plasma electrode 15 is placed on the boat 22, and the lead electrode 15c is a fixing mechanism 24 for the high frequency power supply terminal 24.
The opening 11 is fixed by the loading device 25 while being fixed to a.
It is loaded into the processing chamber 11 from a and the processing is performed in the same manner as the above-mentioned embodiment.

In the plasma processing apparatus of this embodiment described above, the fixing mechanism 24a can achieve the same effects as those of the above-described embodiments. Further, the plasma electrode 15 is arranged on the boat 22 fixed to the door flange 23, the door flange 23 is held vertically by the loading device 25, and the boat 22 and the plasma electrode 15 are not brought into contact with the inner wall of the processing chamber 11, It can be loaded and unloaded.
Therefore, dust that adversely affects the semiconductor device is not generated and the processing chamber 11 is not worn, so that the life of the processing chamber can be extended.

[Advantages of the Invention] As described above, in the plasma processing apparatus of the present invention, it is possible to increase the amount of plasma generated and perform processing efficiently.

Further, since the boat is held by the door, by supporting this door, the boat can be loaded / unloaded into / from the processing chamber while being in contact with the inner wall of the processing chamber, and dust that adversely affects semiconductor devices can be obtained. It is possible to prevent abrasion of the processing chamber. Further, with such a structure, it is not necessary to frequently attach and detach the lead electrode and the power supply terminal, and it is possible to suppress dust generation and improve work efficiency.

[Brief description of drawings]

FIG. 1 is a block diagram showing a plasma processing apparatus according to an embodiment of the present invention, and FIG. 2 is a longitudinal sectional view showing an enlarged main part of FIG.
FIG. 3 is a block diagram showing a plasma processing apparatus of another embodiment of the present invention, FIG. 4 is an enlarged vertical sectional view showing an essential part of FIG. 3, and FIG. 5 shows a conventional plasma processing apparatus. It is a block diagram. 11 ... Processing chamber, 13 ... Screw, 14 ... Power supply terminal, 15b ... Electrode plate, 15c ... Lead electrode, 15 ...
... plasma electrode, 18 ... high-frequency power supply device.

Claims (2)

[Claims] 1. A door that hermetically closes an opening in a processing chamber, a boat that is held by the door and has at least one pair of electrode plates that is provided inside the processing chamber, and that holds an object to be processed; And a lead electrode connected to the electrode plate for applying high-frequency power between the electrode plates, and a power supply provided to penetrate the door through an insulating member and supply the high-frequency power to the lead electrode from outside the processing chamber. A plasma processing apparatus comprising: a terminal; and a fixing mechanism that fixes and electrically connects the power supply terminal and the lead electrode. 2. The plasma processing apparatus according to claim 1, wherein the fixing mechanism is arranged on a door flange that closes an opening of the processing chamber.