JPH0696766B2 - Ion plating device - Google Patents

Description

Detailed Description of the Invention

[0001]

FIELD OF THE INVENTION The present invention relates to an ion plating apparatus.

[0002]

2. Description of the Related Art Generally, film formation by an ion plating apparatus is characterized in that a film having high adhesion can be formed on the surface of a base material as compared with a usual CVD method or a sputtering method.
When the film formation by the ion plating device having such characteristics is applied to the structural material as the base material, the viewpoint of forming a thick film having a smooth surface without being affected by the improvement of productivity and the surface roughness of the structural material. Therefore, it is required to form a film at a high speed.

By the way, a conventional ion plating apparatus is provided with a vacuum chamber, a base material holder arranged in the vicinity of an upper part of the chamber, and an arcuately movable lower part of the base material holder. A flat-plate shutter for shielding the deposition of deposition material on the held substrate, a deposition source disposed near the bottom of the chamber,
A plasma gun provided on a side wall of the chamber, and an electrode provided on a side wall of the chamber opposite to the plasma gun with the holder interposed therebetween, for drawing plasma from the plasma gun into the chamber. It is structured.

In the ion plating apparatus having the above-mentioned structure, the substrate is held by the substrate holder, the shutter is moved to be positioned below the substrate, and then the inside of the chamber is set to a predetermined degree of vacuum, Plasma is generated by a plasma gun, and the plasma is drawn into the chamber by the electrodes. With such plasma formed in the chamber, a desired vapor deposition material is evaporated from the vapor deposition source and ionized by the plasma. After the preparation for film formation in which the evaporation of the plasma and the evaporation material is stabilized, the shutter is moved to open the lower part of the base material so that the ionized evaporation material collides with the surface of the base material to which a negative potential is applied. To form a predetermined thin film.

[0005]

However, in the ion plating apparatus having the above structure, if the density of the plasma generated in the vacuum chamber is increased in order to increase the film formation speed, the ion plating apparatus is arranged below the substrate in the film formation preparation step. Since the shutter is flat, the plasma wraps around the substrate. As a result, there is a problem that the film quality of the thin film after the shutter is opened and the film is formed is significantly deteriorated.

The present invention has been made in order to solve the above-mentioned conventional problems. Even when high-density plasma is generated in the vacuum chamber, the plasma is surely circulated to the substrate side in the film-forming preparation stage. Another object of the present invention is to provide an ion plating device capable of preventing the above.

[0007]

According to the present invention, a vapor deposition material is deposited on a vacuum chamber, a substrate holder arranged near the upper part of the chamber, and a substrate held by the substrate holder. A shutter for shielding, a vapor deposition source for vaporizing a vapor deposition material disposed near the bottom of the chamber, a plasma gun provided on a sidewall of the chamber, and a plasma gun provided near an inner surface of the sidewall of the chamber. In an ion plating apparatus equipped with a counter electrode for drawing plasma from a gun into the chamber, the shutter is composed of a bottom plate and a vertical half frame body integrated with the bottom plate, and is movable in an arc shape, for example. A main shutter member,
The ion plating device is characterized by comprising an auxiliary shutter member which is connected to the vertical half frame and surrounds the holder and which has a vertical half frame shape, for example, which can be moved forward and backward.

The vapor deposition source may be of electron beam heating type, resistance heating type, or the like. As the crucible for accommodating the vapor deposition material of the vapor deposition source, in addition to the structure having a single hole for accommodating the vapor deposition material, a crucible having a structure for accommodating the vapor deposition material at a plurality of points or in an annular shape is used.

The ion plating apparatus according to the present invention preferably has the configuration described below from the viewpoint of high-speed film formation.

(1) A vacuum chamber, a substrate holder arranged near the upper part of the chamber, and the above-mentioned structure for shielding deposition of a vapor deposition substance on the substrate held by the substrate holder Shutter, a vapor deposition source disposed near the bottom of the chamber to evaporate a vapor deposition substance with an electron gun, a plasma gun provided on the side wall of the chamber, and the same plasma gun near the inner surface of the side wall of the chamber. Alternatively, a rectangular first counter electrode for arranging the plasma gun from the plasma gun into the chamber so as to be located substantially in the same plane and facing the plasma gun, and a side wall of the chamber. It is arranged near the inner surface so as to be located on the same or substantially the same plane as the plasma gun and to face each other in the electron beam emission direction from the electron gun. The rectangular second and third counter electrodes for drawing out the plasma from the plasma gun into the chamber, and the first to third counter electrodes so that the surfaces facing each other become the S poles. And a coil for controlling the magnetic force in relation to each of the magnets, the permanent magnet being disposed in the vicinity of the outer surface of the side wall of the chamber where the counter electrodes are located.

(2) A vacuum chamber, a base material holder arranged near the upper part in the chamber, and the above-mentioned structure for shielding deposition of a vapor deposition substance on the base material held by the base material holder Shutter, a vapor deposition source disposed near the bottom of the chamber to evaporate a vapor deposition substance with an electron gun, a plasma gun provided on the side wall of the chamber, and the same plasma gun near the inner surface of the side wall of the chamber. Alternatively, a rectangular first counter electrode that is arranged so as to be located substantially in the same plane and faces the plasma gun, and has a built-in permanent magnet for drawing plasma from the plasma gun into the chamber. , So as to be located in the same or substantially the same plane as the plasma gun in the vicinity of the inner surface of the side wall of the chamber, and to face each other in the electron beam emission direction from the electron gun. Second and third counter electrodes arranged in such a manner that each has a built-in permanent magnet for drawing plasma from the plasma gun into the chamber, and front and back surfaces of the first to third counter electrodes. An ion plating apparatus, which is wound around the periphery except for the above, and includes a coil that constitutes an electromagnet together with the counter electrodes so that the surfaces of the counter electrodes facing each other become S poles.

[0012]

According to the present invention, the shutter disposed below the base material holder is composed of a bottom plate and a vertical half-frame body integrated with the bottom plate. The main shutter member is movable in, for example, an arc shape, and the vertical shutter. Forming a vertical half-frame body that is connected to the half-frame body and surrounds the holder, for example, an auxiliary shutter member that can move forward and backward to form a film even if high-density plasma is generated in the vacuum chamber. In the preparatory step, the plasma wraparound to the substrate side is prevented by the bottom plate of the main shutter member, and the vertical frame by combining the vertical half frame body of the same member and the auxiliary shutter member having the vertical half frame body shape. It can be surely prevented. As a result, a thin film having a good film quality can be formed at high speed on the surface of the base material by opening the shutter and forming a film.

The present inventors have tried to construct the shutter from a bottom plate which can move forward and backward and a vertical frame which can move in an arc shape. However, in the shutter having such a structure, since the bottom plate is deformed by the radiant heat from the heater attached to the holder, the molten vapor deposition material of the vapor deposition source and the plasma, it is necessary to increase the distance between the bottom plate and the lower end of the vertical frame. . As a result, there is a problem that plasma flows around the base material through the gap between the bottom plate and the vertical frame body. On the other hand, since the shutter used in the present invention has a structure in which the bottom plate is integrated with the main shutter member at the lower end of the vertical half frame, the amount of deformation due to the radiant heat is reduced and the main shutter member is also used. Even if the bottom plate is deformed, it is possible to prevent the plasma from wrapping around to the side like the shutter configured by the bottom plate and the vertical frame body as described above.

[0014]

Embodiments of the present invention will now be described in detail with reference to FIGS.

FIG. 1 is a schematic cross-sectional view showing an ion plating device of the present invention, FIG. 2 is a cross-sectional view taken along line II-II of FIG. 1, and FIG. 3 is a view for explaining generation of plasma by the device. FIG. 4 is a perspective view showing a state where the shutter is opened. Reference numeral 1 in the figure denotes a square cylindrical vacuum chamber, and an exhaust pipe 2 communicating with a vacuum pump for maintaining a predetermined degree of vacuum in the chamber 1 is provided on an upper side wall of the chamber 1. . Further, 3 in the drawing is a vapor deposition source. The vapor deposition source 3 is provided on the crucible 4 installed at the bottom of the chamber 1 and below the side wall of the chamber 1.
Electron gun 5 for irradiating the crucible 4 with an electron beam
And the electron gun 5 arranged near the upper part of the crucible 4.
And a pair of deflection magnets 6 for irradiating the vapor deposition material in the crucible 4 by deflecting the electron beam from the.

A plasma gun 7 as a plasma generation source is provided on the outer surface of one side wall of the chamber 1, and an introduction for introducing a predetermined gas such as argon (Ar) is provided at the rear of the plasma gun 7. A tube (not shown) is provided. A diaphragm coil 8 is provided on the outer surface of the side wall of the chamber 1 in which the plasma gun 7 is provided, and a plasma narrowing portion 9 is provided on the side wall. The three support shafts 10 ₁ , 10 ₂ , and 10 ₃ are located in the same plane as the plasma gun 7 on the other three sidewalls except the one sidewall on which the plasma gun 7 is provided. It is inserted through. Each of the support shafts 10 ₁ , 10 ₂ , 10 ₃
The first to third counter electrodes 11 ₁ , 11 ₂ and 11 ₃ each having a rectangular shape are fixed to the tip located inside the chamber 1. The first counter electrode 11 ₁ is arranged to face the plasma gun 7. The second and third
The counter electrodes 11 ₂ and 11 ₃ are arranged so as to face each other and be parallel to each other in the electron beam emission direction of the electron gun 5. The respective counter electrodes 11 ₁ , 11 ₂ , 11 ₃ are
Rectangular permanent magnets 12 ₁ , 12 ₂ , 12 ₃ are built in so that the surfaces facing each other become S poles. Each of the support shafts 10 ₁ , 10 ₂ , and 10 ₃ is electrically connected to the plasma gun 7, and a DC power supply 13 for applying a negative potential to the plasma gun 7 is connected to the wiring connecting the members. Is provided so that a potential gradient can be applied between the plasma gun 7 and each of the counter electrodes 11 ₁ , 11 ₂ and 11 ₃ when plasma is generated. In the vicinity of the outer surfaces of the other three side walls except for the one side wall of the chamber 1 in which the plasma gun 7 is provided, three air-core coils 14 ₁ , 14 ₂ ,
14 ₃ is arranged corresponding to each of the counter electrodes 11 ₁ , 11 ₂ and 11 ₃ .

A holder 15 for holding a substrate is provided in the vicinity of the upper portion of the sheet-shaped plasma generation region in the chamber 1.
And the holder 15 is supported and suspended by a rotary shaft 16. The rotary shaft 16 is connected to a variable power source 17, and the holder 1 is passed through the rotary shaft 16.
A negative voltage is applied to 5. A reaction gas introducing pipe 18 is connected to a lower portion of a side wall of the chamber 1.

Below the holder 15, a shutter 19 is provided.
Are arranged. As shown in FIGS. 3 and 4, the shutter 19 is a main shutter member including a circular bottom plate 20 disposed below the holder 15 and a vertical semi-cylindrical frame body 21 integrated with the bottom plate 20. 22 and an auxiliary shutter member 23 which is combined with the vertical semi-cylindrical frame body 21 of the main shutter member 22 and surrounds the holder 15 and has a vertical semi-cylindrical frame shape. The main shutter member 22 can be moved in an arc shape by an L-shaped arm 24 extending from the upper wall of the chamber 1. The auxiliary shutter member 23 can be moved forward and backward by a drive rod 25 extending from the side wall of the chamber 1.

Next, the operation of the above-mentioned ion plating device will be described in detail.

First, the base material 26 is held by the holder 15 and the desired vapor deposition material is accommodated in the crucible 4 of the vapor deposition source 3. Subsequently, the main shutter member 22 of the shutter 19 is moved by the L-shaped arm 24, and the auxiliary shutter member 23 is moved forward by the drive rod 25 to move the main shutter member 22.
The vertical semi-cylindrical frame 21 and the auxiliary shutter member 23 in the shape of the vertical semi-cylindrical frame are brought into contact with each other so that the bottom plate 20 is below the holder 15 and the outer periphery of the holder 15 is vertical. It is surrounded by a semi-cylindrical frame 21 and an auxiliary shutter member 23 having a vertical semi-cylindrical frame shape. Subsequently, a vacuum pump (not shown) is operated to pass the exhaust pipe 2 and the vacuum chamber 1
The gas inside is exhausted to bring the inside of the chamber 1 to a predetermined degree of vacuum.

Next, a negative voltage is applied to the base material 26 from the variable power source 17 through the rotary shaft 16 and the holder 15, and the electron beam is emitted from the electron gun 5 while rotating the holder 15 by the rotary shaft 16. The deflecting magnet 6 scans the electron beam and irradiates the vapor deposition material contained in the crucible 4 to melt and vaporize the vapor deposition material. At the same time, when argon gas or the like is supplied to the plasma gun 7 and plasma is generated from the plasma gun 7, the plasma gun 7 is arranged so as to face the plasma gun 7, and a potential gradient is provided between the plasma gun 7 and the plasma gun 7. The first to third counter electrodes 11 ₁ and 11
_The plasma 27 is drawn into the chamber 1 through the narrowed portion 9 by the numbers ₂ and 11 ₃ . At this time, each of the counter electrodes 11
₁ , 11, ₂ and 11 ₃ have rectangular permanent magnets 12 ₁ , 12 ₂ and 12 ₃ built in so that the surfaces facing each other become S poles, and the back surfaces of the counter electrodes 11 ₁ , 11 ₂ and 11 ₃ . Air-core coils 14 ₁ and 1 (in the vicinity of the outer surface of the side wall of the chamber 1)
Since 4 ₂ and 14 ₃ are arranged, the magnets 12 ₁ , 12 ₂ and 1 are provided near the lower part of the holder 15 as shown in FIG.
2 ₃ the back of the N strong horizontal direction toward the S pole of the opposing surface from the pole magnetic field (magnetic flux _{density) B 1, B 2, B} 3 is produced.
When such a magnetic field is generated, the plasma 27 drawn from the plasma gun 7 causes the magnetic flux densities B ₁ , B ₂ ,
Since it is entangled with B ₃ and drawn into each of the magnets 12 ₁ , 12 ₂ , and 12 ₃ , a sheet-like plasma having a high plasma density is formed near the lower portion of the holder 15 without causing a loss in the amount of plasma. In addition, the air-core coil 14 ₁ ,
By adjusting the amount of current supplied to 14 ₂ and 14 ₃ ,
A stronger magnetic field is generated to form a more dense sheet-like plasma. Moreover, the air-core coil 1
4 _1, 14 _2, the planar shape of the sheet-shaped plasma 27 by adjusting the amount of current supplied to 14 ₃ is controlled. In forming the sheet-shaped plasma 27, the second and third
Since the counter electrodes 11 ₂ and 11 ₃ are arranged to face each other in the electron beam emission direction of the electron gun 5,
The emission direction of the electron beam from the electron gun 5 is the second,
Permanent magnet 1 built in the third counter electrodes 11 ₂ and 11 _3.
It is prevented from being changed by being influenced by the magnetic fields of 2 ₂ and 12 ₃ . When the sheet-shaped plasma 27 is generated,
The magnetic flux density is the line connecting the center of the crucible 4 and the center of the holder 15, the plasma gun 7 and the counter electrodes 11 ₁ ,
The intersection with the surface formed by 11 ₂ and 11 ₃ becomes the minimum,
Flux density increases toward the free magnet 12 _1, 12 _2, 12 ₃ from the intersection. That is, the density of the sheet-shaped plasma 27 is minimum at the intersection, and increases from the intersection toward the magnets 12 ₁ , 12 ₂ , 12 ₃ .

When the sheet-like plasma 27 having such a high plasma density is formed near the lower portion of the holder 15 (base material 19), the vapor deposition material vaporized by the vapor deposition source 3 rises into the plasma 27. Is efficiently ionized by. In the stage of preparation for film formation, the lower side of the base material 26 held on the lower surface of the holder 15 is the shutter 1
Since the outer periphery of the bottom plate 20 of 9 is surrounded by the vertical semi-cylindrical frame body 21 and the auxiliary shutter member 23 having the vertical semi-cylindrical frame body shape, the plasma 27 wraps around the base material 26 side. Is reliably prevented.

After the film-forming preparation is completed, the main shutter member 22 of the shutter 19 is moved in an arc shape by the L-shaped arm 24, and the auxiliary shutter member 23 is retracted by the drive rod 25 to move the holder as shown in FIG. When the base material 26 of 15 is opened, the ionized vapor deposition material (positive ion vapor deposition material) is converted into the base material 26 to which the negative voltage is applied.
The surface is accelerated and collided to form a predetermined film on the surface of the base material 26.

Therefore, according to the above-described ion plating apparatus of the present invention, the sheet-like plasma 27 having a high plasma density can be formed near the lower portion of the base material 26 held on the lower surface of the holder 15. In the formation of the sheet-shaped plasma 27 (stage of film formation preparation), the shutter 19 disposed below the base material holder 15 is the bottom plate 20 and the bottom plate 20.
Main shutter member 22 which is composed of a vertical semi-cylindrical frame body 21 integrated into
And an auxiliary shutter member 23 which is connected to the vertical semi-cylindrical frame 21 and surrounds the holder to form a vertical semi-cylindrical frame, and which is movable forward and backward by a drive rod 25. 26 is formed by connecting the bottom plate 20 of the main shutter member 22, the vertical semi-cylindrical frame body 21 of the main shutter member 22 and the auxiliary shutter member 23 having the vertical semi-cylindrical frame body shape. It can be surely prevented by the vertical cylindrical frame body. as a result,
By opening the shutter 19 to form a film, a thin film having a good film quality can be formed at a high speed on the surface of the base material 26.

Although the vertical half-frame body and the auxiliary shutter member which form the main shutter member are formed in the semi-cylindrical frame body in the above-mentioned embodiment, the present invention is not limited to this. For example, it may be a vertical half-square tube frame body. Further, the opening / closing operation of the auxiliary shutter member of the vertical semi-cylindrical frame body may be performed by an arcuate rotary motion.

In the above embodiment, the rectangular permanent magnet is built in the counter electrode. However, the oblong permanent magnet may be built in the counter electrode. In particular, when the plasma current supplied to the plasma gun is increased to further increase the film formation rate, it is preferable to incorporate an oblong permanent magnet in the counter electrode.

In the above-described embodiment, an example in which the invention is applied to the formation of the film made of only the vapor deposition material housed in the crucible has been described. However, as shown in FIG. 2, the reaction gas is passed through the gas introducing pipe 18 connected to the vacuum chamber 1. For example, it is possible to form the metal nitride film by introducing nitrogen gas into the chamber 1.

[0028]

As described in detail above, according to the present invention, even when high-density plasma is generated in the vacuum chamber, it is possible to reliably prevent the plasma from wrapping around to the base material side in the film-forming preparation stage, and thus the base material. It is possible to provide an ion plating device capable of forming a thin film having a good film quality on a material surface at high speed.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view of an ion plating apparatus showing an embodiment of the present invention.

FIG. 2 is a sectional view taken along line II-II in FIG.

3 is a perspective view for explaining formation of sheet-like plasma by the ion plating apparatus of FIG.

FIG. 4 is a perspective view showing a state in which a shutter is opened in the ion plating apparatus of FIG.

[Explanation of symbols]

1 ... Vacuum chamber, 3 ... Deposition source, 4 ... Crucible, 4a ...
Hole, 5 ... Electron gun, 7 ... Plasma gun, 11 ₁ , 11 ₂ , 1
1 ₃ ... Counter electrode, 12 ₁ , 12 ₂ , 12 ₃ ... Permanent magnet,
14 ₁ , 14 ₂ , 14 ₃ ... Air core coil, 15 ... Holder,
17 ... Variable power source, 18 ... Gas introduction pipe, 19 ... Shutter,
20 ... Bottom plate, 21 ... Vertical semi-cylindrical frame, 22 ... Main shutter member, 23 ... Auxiliary shutter member, 26 ... Base material, 27 ...
Sheet-shaped plasma.

Claims (1)

[Claims] 1. A vacuum chamber, a substrate holder disposed in the vicinity of an upper portion of the chamber, a shutter for blocking deposition of a vapor deposition substance on the substrate held by the substrate holder, A vapor deposition source disposed near the bottom of the chamber for evaporating the vapor deposition material, a plasma gun provided on the side wall of the chamber, and a plasma gun provided near the inner surface of the side wall of the chamber. In the ion plating apparatus having an opposing electrode for pulling out to, the shutter is a main shutter member including a bottom plate and a vertical half frame body integrated with the bottom plate,
An ion plating device, comprising: an auxiliary shutter member that is connected to the vertical half frame and surrounds the holder and has a vertical half frame shape.