JPH0699808B2 - Method for forming cadmium sulfide thin film - Google Patents
Method for forming cadmium sulfide thin filmInfo
- Publication number
- JPH0699808B2 JPH0699808B2 JP60286068A JP28606885A JPH0699808B2 JP H0699808 B2 JPH0699808 B2 JP H0699808B2 JP 60286068 A JP60286068 A JP 60286068A JP 28606885 A JP28606885 A JP 28606885A JP H0699808 B2 JPH0699808 B2 JP H0699808B2
- Authority
- JP
- Japan
- Prior art keywords
- cadmium
- thin film
- cadmium sulfide
- forming
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1229—Composition of the substrate
- C23C18/1245—Inorganic substrates other than metallic
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1279—Process of deposition of the inorganic material performed under reactive atmosphere, e.g. oxidising or reducing atmospheres
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemically Coating (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Recrystallisation Techniques (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明はエレクトロニクスデバイスに使用される硫化カ
ドミウム薄膜及びその形成方法に関するものである。TECHNICAL FIELD The present invention relates to a cadmium sulfide thin film used in an electronic device and a method for forming the same.
従来の技術 従来より硫化カドミウム薄膜はエレクトロニクス分野、
特に光電池や半導体素子等として広く使用されている。Conventional technology Cadmium sulfide thin film has been used in the electronics field,
In particular, it is widely used as a photovoltaic cell, a semiconductor element, and the like.
硫化カドミウムは比抵抗が100MΩ・cmと高く抵抗を下げ
る等のためにインジウムやガリウムをドープしていた。Cadmium sulfide has a high specific resistance of 100 MΩ · cm and is doped with indium or gallium in order to lower the resistance.
これらの硫化カドミウム薄膜の形成方法としてはスパッ
タリング法、蒸着法、CVD法等によって基板上に形成さ
れていた。また、スクリーン印刷方式による形成方法
（ナショナル テクニカル レポートVol.29No.1スクリ
ーン印刷Cds/CdTe太陽電池 松下電器産業株式会社 無
線研究所）もある。これは硫化カドミウムに塩化カドミ
ウム9.1wt％とプロピレングリコールを加え、硫化カド
ミウムのペーストをつくり、スクリーン印刷によって基
板上に印刷し、特殊なアルミナ焼成容器に入れ窒素雰囲
気中で690℃、１時間焼成する方法である。また、別の
硫化カドミウムの製造方法として、カドミウム−硫黄結
合を少なくとも内部に有する有機金属化合物を不活性雰
囲気中で熱分解により形成する方法が特開昭60−6417号
公報、同60−6441号公報、同60−6444号公報に開示され
ている。These cadmium sulfide thin films have been formed on the substrate by a sputtering method, a vapor deposition method, a CVD method or the like. There is also a screen printing method (National Technical Report Vol.29 No.1 screen printing Cds / CdTe solar cells Matsushita Electric Industrial Co., Ltd. Radio Research Laboratory). This is made by adding 9.1 wt% of cadmium chloride and propylene glycol to cadmium sulfide to make a cadmium sulfide paste, print it on the substrate by screen printing, put it in a special alumina firing container and bake at 690 ° C for 1 hour in a nitrogen atmosphere. Is the way. Further, as another method for producing cadmium sulfide, a method of forming an organometallic compound having at least an internal cadmium-sulfur bond by thermal decomposition in an inert atmosphere is disclosed in JP-A-60-6417 and JP-A-60-6441. Japanese Patent Laid-Open No. 60-6444.
発明が解決しようとする問題点 上記、硫化カドミウム薄膜の形成方法は真空容器中で行
われるために生産性が悪く、連続操業が困難であるか、
あるいは非常に高額の生産設備を必要とする。また、真
空容器の大きさで製品の大きさを規定され、大面積の製
造が困難である等の問題点を有している。Problems to be Solved by the Invention Above, the method for forming a cadmium sulfide thin film has poor productivity because it is carried out in a vacuum vessel, or continuous operation is difficult,
Or it requires very expensive production equipment. Further, the size of the product is regulated by the size of the vacuum container, and there is a problem that it is difficult to manufacture a large area.
また、上記、スクリーン印刷方式による形成方法では生
産性が良く、連続操業が容易である等の利点があるが、
特殊な焼成容器を必要とし、焼結助剤として塩化カドミ
ウムを入れているため焼成時に塩化カドミウムの排気が
生じ公害の問題が生じる等の問題点を有している。さら
に、上記カドミウム−硫黄結合を少なくとも内部に有す
る有機金属化合物を不活性雰囲気中で熱分解により形成
する方法においては熱分解により形成された硫化カドミ
ウム薄膜中に炭素が残留するなどの問題点があった。Further, the above-mentioned forming method by the screen printing method has advantages such as good productivity and easy continuous operation.
Since a special baking container is required and cadmium chloride is added as a sintering aid, there is a problem in that cadmium chloride is exhausted at the time of baking and pollution problems occur. Further, in the method of forming the organometallic compound having at least the cadmium-sulfur bond therein by thermal decomposition in an inert atmosphere, there is a problem that carbon remains in the cadmium sulfide thin film formed by thermal decomposition. It was
本発明は真空容器を使用せずに、硫化カドミウム薄膜を
形成することを目的とするものである。An object of the present invention is to form a cadmium sulfide thin film without using a vacuum container.
問題点を解決するための手段 本発明が上記問題点を解決するための手段は、カドミウ
ム−硫黄結合を少なくとも一つ内部に有する有機カドミ
ウム化合物にドープ剤としてインジウム−硫黄あるいは
ガリウム−硫黄との結合を少なくとも一つ内部に有する
有機金属化合物と混合したものを基板上に形成し、酸化
雰囲気中で熱分解により形成することと、或いは、熱分
解後不活性雰囲気中で焼成により形成することである。Means for Solving the Problems The means for solving the above problems according to the present invention is to bond indium-sulfur or gallium-sulfur as a dopant to an organic cadmium compound having at least one cadmium-sulfur bond inside. Is formed on a substrate by mixing with an organometallic compound having at least one inside thereof, and is formed by thermal decomposition in an oxidizing atmosphere, or is formed by baking in an inert atmosphere after thermal decomposition. .
本発明に使用できるカドミウム−硫黄結合を少なくとも
一つ内部に有する有機カドミウム化合物としては、各種
カドミウムメルカプチド、各種チオカルボン酸、または
ジチオカルボン酸のカドミウム塩等を挙げることができ
る。Examples of the organic cadmium compound containing at least one cadmium-sulfur bond in the present invention include various cadmium mercaptides, various thiocarboxylic acids, and cadmium salts of dithiocarboxylic acids.
ドープ剤としてインジム−硫黄あるいはガリウム−硫黄
との結合を少なくとも一つ内部に有する有機金属化合物
としてはインジウム、あるいはガリウムのメルカプチ
ド、チオカルボン酸塩、ジチオカルボン酸塩等を挙げる
ことができる。Examples of the organometallic compound having at least one bond with indium-sulfur or gallium-sulfur as a doping agent include indium, gallium mercaptide, thiocarboxylic acid salt, and dithiocarboxylic acid salt.
基板としては、熱分解温度に耐えるものであれば任意に
選ぶことができる。通常熱分解温度は320〜450℃程度で
あるため、安価なソーダ石灰ガラス等を十分使用でき
る。Any substrate can be selected as long as it can withstand the thermal decomposition temperature. Since the thermal decomposition temperature is usually about 320 to 450 ° C, inexpensive soda lime glass or the like can be sufficiently used.
熱分解は大気中や、酸素雰囲気中等の酸化雰囲気中で行
うことにより有機分である炭素や水素を完全に分解する
ことができる。また、より焼結度を増すために高温に上
げる場合は、酸化雰囲気中では得られた硫化カドミウム
薄膜が酸化され、酸化物が含まれた薄膜になるため、熱
分解後不活性雰囲気中で焼成することが有効である。Pyrolysis can be carried out in the air or in an oxidizing atmosphere such as an oxygen atmosphere to completely decompose organic components such as carbon and hydrogen. If the temperature is raised to a higher temperature to further increase the degree of sintering, the obtained cadmium sulfide thin film is oxidized in the oxidizing atmosphere and becomes a thin film containing oxides. It is effective to do.
作用 上記本発明の手段を用いることにより、従来の方法の問
題となっている真空容器を使用せずに、抵抗の低い硫化
カドミウム薄膜を形成できるため、薄膜の製造に関し
て、生産性の向上が計られ、かつ大面積の製造を容易に
行うことができる。また、塩化カドミウムを使用しない
ため塩化カドミウムの排気が無く、有害物の排気を低減
することができる等の作用がある。By using the above-mentioned means of the present invention, it is possible to form a cadmium sulfide thin film having a low resistance without using a vacuum container, which has been a problem of the conventional method. In addition, a large area can be easily manufactured. Further, since cadmium chloride is not used, there is no exhaust of cadmium chloride, which has an effect of reducing exhaust of harmful substances.
実施例 以下実施例により説明する。Examples Hereinafter, examples will be described.
（実施例１） カドミウムラウリルメルカプチド、インジウムオクチル
メルカプチドをテトラリンに混合、溶解し、アルミナ基
板上にスピナーにて塗布し、150℃で乾燥し溶媒を揮散
させた後、大気中で450℃、１時間熱分解する。この結
果、膜厚500〜5000Åで、面積抵抗150〜1.5KΩ／□のほ
ぼ無色〜黄色い亀裂のない均一な硫化カドミウムの薄膜
が得られた。この薄膜を元素分析にかけた結果、硫化カ
ドミウムが生成していることが確認された。また、膜内
に炭素、水素の残留は認められなかった。(Example 1) Cadmium lauryl mercaptide and indium octyl mercaptide were mixed and dissolved in tetralin, coated on a alumina substrate with a spinner, dried at 150 ° C, and the solvent was volatilized, and then 450 ° C in the atmosphere, Pyrolysis for 1 hour. As a result, a uniform thin film of cadmium sulfide having a film thickness of 500 to 5000 Å and an area resistance of 150 to 1.5 KΩ / □, which is almost colorless to yellow and has no cracks was obtained. As a result of subjecting this thin film to elemental analysis, it was confirmed that cadmium sulfide was generated. In addition, no carbon or hydrogen remained in the film.
（実施例２） カドミウムラウリルメルカプチド、インジウムオクチル
メルカプチドをテトラリンに混合、溶解し、アルミナ基
板上にスピナーにて塗布し、150℃で乾燥し溶媒を揮散
させた後、大気中で450℃、30分熱分解する。この後窒
素気流中で700℃１時間で焼成する。この結果、膜厚500
〜5000Åで、面積抵抗100〜1KΩ／□のほぼ無色〜黄色
い亀裂のない均一な硫化カドミウムの薄膜が得られた。
この薄膜を元素分析にかけた結果、硫化カドミウムが生
成していることが確認された。また、膜内に炭素、水素
の残留は認められなかった。また、走査型電子顕微鏡で
観察した結果、酸化雰囲気中で熱分解しただけの膜の比
べ結晶の成長が顕著であった。(Example 2) Cadmium lauryl mercaptide and indium octyl mercaptide were mixed and dissolved in tetralin, coated on a alumina substrate with a spinner, dried at 150 ° C, and the solvent was volatilized, and then 450 ° C in the atmosphere, Thermal decomposition for 30 minutes. Then, it is fired in a nitrogen stream at 700 ° C. for 1 hour. As a result, a film thickness of 500
A uniform colorless to yellow crack-free thin film of cadmium sulfide with an area resistance of 100 to 1 KΩ / □ was obtained at ˜5000 Å.
As a result of subjecting this thin film to elemental analysis, it was confirmed that cadmium sulfide was generated. In addition, no carbon or hydrogen remained in the film. As a result of observation with a scanning electron microscope, the growth of crystals was remarkable as compared with the film which was only thermally decomposed in an oxidizing atmosphere.
（実施例３） チオ安息香酸カドミウム、チオ安息香酸ガリウムをテト
ラリンに混合、溶解し、アルミナ基板上にスピナーにて
塗布し、150℃で乾燥し溶媒を揮散させた後、大気中で4
50℃、１時間熱分解する。この結果、膜厚500〜5000Å
で、面積抵抗150〜1.5KΩ／□のほぼ無色〜黄色い亀裂
のない均一な硫化カドミウムの薄膜が得られた。この薄
膜を元素分析にかけた結果、硫化カドミウムが生成して
いることが確認された。また、膜内に炭素、水素の残留
は認められなかった。(Example 3) Cadmium thiobenzoate and gallium thiobenzoate were mixed and dissolved in tetralin, coated on a alumina substrate with a spinner, dried at 150 ° C, and the solvent was evaporated.
Thermal decomposition at 50 ° C for 1 hour. As a result, the film thickness is 500 ~ 5000Å
As a result, a uniform colorless to yellow crack-free thin film of cadmium sulfide having an area resistance of 150 to 1.5 KΩ / □ was obtained. As a result of subjecting this thin film to elemental analysis, it was confirmed that cadmium sulfide was generated. In addition, no carbon or hydrogen remained in the film.
（実施例４） チオ安息香酸カドミウム、チオ安息香酸ガリウムをテト
ラリンに混合、溶解し、アルミナ基板上にスピナーにて
塗布し、150℃で乾燥し溶媒を揮散させた後、大気中で4
50℃、30分熱分解する。その後窒素気流中で700℃１時
間焼成する。この結果、膜厚500〜5000Åで、面積抵抗1
00〜1KΩ／□のほぼ無色〜黄色い亀裂のない均一な硫化
カドミウムの薄膜が得られた。この薄膜を元素分析にか
けた結果、硫化カドミウムが生成していることが確認さ
れた。また、膜内に炭素、水素の残留は認められなかっ
た。また、走査型電子顕微鏡で観察した結果、酸化雰囲
気中で熱分解しただけの膜に比べ結晶の成長が顕著であ
った。(Example 4) Cadmium thiobenzoate and gallium thiobenzoate were mixed and dissolved in tetralin, coated on an alumina substrate with a spinner, dried at 150 ° C, and the solvent was volatilized.
Thermal decomposition at 50 ℃ for 30 minutes. After that, it is baked in a nitrogen stream at 700 ° C. for 1 hour. As a result, with a film thickness of 500 to 5000Å and an area resistance of 1
A uniform colorless to yellow crack-free thin film of cadmium sulfide of 00 to 1 KΩ / □ was obtained. As a result of subjecting this thin film to elemental analysis, it was confirmed that cadmium sulfide was generated. In addition, no carbon or hydrogen remained in the film. Further, as a result of observation with a scanning electron microscope, crystal growth was remarkable as compared with a film which was only thermally decomposed in an oxidizing atmosphere.
発明の効果 以上のように本発明の硫化カドミウム薄膜及びその形成
方法は、カドミウム−硫黄結合を少なくとも一つ内部を
有する有機カドミウム化合物に、ドープ剤として硫黄と
の結合を少なくとも一つ内部に有する有機金属化合物を
混合したものを用い、その混合物を基板上に形成し、酸
化雰囲気中で熱分解により形成することと、熱分解後不
活性雰囲気中で焼成により形成することにより、スパッ
タリング法、蒸着法に比較して、生産性の向上が計ら
れ、非常に高額の設備を必要とせず、大面積の製造を容
易に行うことができる。また、塩化カドミウムを使用し
ないため塩化カドミウムの排気が無く、有害物の排気を
低減することができ、炭素や、水素の残留を無くすこと
ができ、その実用的効果は大なるものがある。As described above, the cadmium sulfide thin film and the method for forming the same according to the present invention, the organic cadmium compound having at least one internal cadmium-sulfur bond, the organic compound having at least one internal sulfur bond as a dopant. By using a mixture of metal compounds, the mixture is formed on a substrate and formed by thermal decomposition in an oxidizing atmosphere, and by forming by firing in an inert atmosphere after thermal decomposition, a sputtering method or a vapor deposition method. Compared to the above, the productivity is improved, a very expensive facility is not required, and a large area can be easily manufactured. Further, since cadmium chloride is not used, there is no exhaust of cadmium chloride, it is possible to reduce the exhaust of harmful substances, and it is possible to eliminate carbon and hydrogen residues, and its practical effect is great.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭55−140705（ＪＰ，Ａ) 特開 昭54−85670（ＪＰ，Ａ) 特開 昭61−166978（ＪＰ，Ａ) 特開 昭61−166979（ＪＰ，Ａ) 特開 昭61−166983（ＪＰ，Ａ) 特開 昭62−146276（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of front page (56) Reference JP-A-55-140705 (JP, A) JP-A-54-85670 (JP, A) JP-A-61-166978 (JP, A) JP-A-61- 166979 (JP, A) JP 61-166983 (JP, A) JP 62-146276 (JP, A)
Claims (2)
部に有する有機カドミウム化合物にドープ剤としてイン
ジウム−硫黄あるいは、ガリウム−硫黄結合を少なくと
も一つ内部に有する有機金属化合物と混合したものを基
板上に塗布し、酸化雰囲気中で熱分解することにより形
成することを特徴とする硫化カドミウム薄膜の形成方
法。1. A mixture of an organic cadmium compound having at least one cadmium-sulfur bond in its interior and a mixture of an indium-sulfur compound or an organometallic compound having at least one gallium-sulfur bond in its interior as a dopant. A method for forming a cadmium sulfide thin film, characterized by forming by applying and thermally decomposing in an oxidizing atmosphere.
部に有する有機カドミウム化合物にドープ剤としてイン
ジウム−硫黄あるいは、ガリウム−硫黄結合を少なくと
も一つ内部に有する有機金属化合物と混合したものを基
板上に塗布し、酸化雰囲気中で熱分解した後、不活性雰
囲気中で焼成することにより形成することを特徴とする
硫化カドミウム薄膜の形成方法。2. A mixture of an organic cadmium compound having at least one cadmium-sulfur bond in its interior and a mixture of an indium-sulfur compound or an organometallic compound having at least one gallium-sulfur bond in its interior as a doping agent. A method for forming a cadmium sulfide thin film, characterized by forming by applying, thermally decomposing in an oxidizing atmosphere, and then baking in an inert atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60286068A JPH0699808B2 (en) | 1985-12-19 | 1985-12-19 | Method for forming cadmium sulfide thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60286068A JPH0699808B2 (en) | 1985-12-19 | 1985-12-19 | Method for forming cadmium sulfide thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62146271A JPS62146271A (en) | 1987-06-30 |
| JPH0699808B2 true JPH0699808B2 (en) | 1994-12-07 |
Family
ID=17699536
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60286068A Expired - Fee Related JPH0699808B2 (en) | 1985-12-19 | 1985-12-19 | Method for forming cadmium sulfide thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0699808B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0744779A3 (en) * | 1995-05-17 | 1998-10-21 | Matsushita Battery Industrial Co Ltd | A manufacturing method of compound semiconductor thinfilms and photoelectric device or solar cell using the same compound semiconductor thinfilms |
| CN106702354B (en) * | 2015-11-13 | 2019-06-28 | 神华（北京）光伏科技研发有限公司 | Cadmium sulphide membrane and its preparation method and application and prepare cadmium sulphide membrane device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0002109B1 (en) * | 1977-11-15 | 1981-12-02 | Imperial Chemical Industries Plc | A method for the preparation of thin photoconductive films and of solar cells employing said thin photoconductive films |
| US4242374A (en) * | 1979-04-19 | 1980-12-30 | Exxon Research & Engineering Co. | Process for thin film deposition of metal and mixed metal chalcogenides displaying semi-conductor properties |
-
1985
- 1985-12-19 JP JP60286068A patent/JPH0699808B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62146271A (en) | 1987-06-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |