JPH07100835B2 - Magnetic thin film and manufacturing method thereof - Google Patents
Magnetic thin film and manufacturing method thereofInfo
- Publication number
- JPH07100835B2 JPH07100835B2 JP62284461A JP28446187A JPH07100835B2 JP H07100835 B2 JPH07100835 B2 JP H07100835B2 JP 62284461 A JP62284461 A JP 62284461A JP 28446187 A JP28446187 A JP 28446187A JP H07100835 B2 JPH07100835 B2 JP H07100835B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- magnetic
- present
- niobium
- nickel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title claims description 37
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 24
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- 229910052758 niobium Inorganic materials 0.000 claims description 16
- 239000010955 niobium Substances 0.000 claims description 16
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 16
- 229910052715 tantalum Inorganic materials 0.000 claims description 15
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 15
- 229910045601 alloy Inorganic materials 0.000 claims description 14
- 239000000956 alloy Substances 0.000 claims description 14
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 12
- 239000010408 film Substances 0.000 claims description 12
- 229910052750 molybdenum Inorganic materials 0.000 claims description 12
- 239000011733 molybdenum Substances 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 12
- 229910052786 argon Inorganic materials 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims 1
- 230000035699 permeability Effects 0.000 description 24
- 230000004907 flux Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 230000007423 decrease Effects 0.000 description 7
- 239000011162 core material Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- UDVYRJZSPDAHDP-UHFFFAOYSA-N [Fe].[Nb].[Mo] Chemical compound [Fe].[Nb].[Mo] UDVYRJZSPDAHDP-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- JMGBWTNUFIOURV-UHFFFAOYSA-N copper iron molybdenum nickel Chemical compound [Mo].[Cu].[Fe].[Ni] JMGBWTNUFIOURV-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- -1 iron-silicon-aluminum Chemical compound 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 （イ）産業上の利用分野 本発明は、高周波磁気特性に優れる磁性薄膜に関し、特
に、例えば、8m/mVTR、Ｒ−DAT及びHDD等の高密度記録
用の薄膜磁気ヘッド、また、超高周波領域で使用される
電子機器の磁心として利用される高周波磁気特性に優れ
る磁性薄膜に関する。TECHNICAL FIELD The present invention relates to a magnetic thin film having excellent high frequency magnetic characteristics, and particularly to a thin film magnetic film for high density recording such as 8 m / mV TR, R-DAT and HDD. The present invention also relates to a magnetic thin film having excellent high-frequency magnetic properties, which is used as a magnetic core of an electronic device used in a super-high frequency region.
（ロ）従来技術 高周波領域で使用される材料としては、現在フェライト
が最も広く使用されている。しかし、フェライトは、飽
和磁束密度が低く、高密度記録用としては不適当であ
り、また超高周波領域では透磁率が大幅に低下する。(B) Conventional technology Ferrite is currently the most widely used material in the high frequency range. However, ferrite has a low saturation magnetic flux density and is not suitable for high-density recording, and its magnetic permeability is significantly reduced in the ultrahigh frequency region.
そこで、高密度記録用の磁気ヘッドとして飽和磁束密度
の高い磁性薄膜が嘱望され、ニッケル−鉄系合金、鉄−
ケイ素−アルミニウム系合金及びコバルト系のアモルフ
ァス合金等の磁性薄膜が実用化されつつある。Therefore, a magnetic thin film having a high saturation magnetic flux density is desired as a magnetic head for high-density recording.
Magnetic thin films such as silicon-aluminum alloys and cobalt amorphous alloys are being put to practical use.
（ハ）発明が解決しようとする問題点 しかし、前記ニッケル−鉄系合金は、前記鉄−ケイ素−
アルミニウム系合金及びコバルト系のアモルファス合金
に比べて磁気特性が劣っている。(C) Problems to be Solved by the Invention However, the nickel-iron based alloy is the iron-silicon-
Magnetic properties are inferior to aluminum-based alloys and cobalt-based amorphous alloys.
また、鉄−ケイ素−アルミニウム系合金は、最適な条件
下では、優れた磁気特性を有する磁性薄膜を得ることが
できるが、再現法に問題がある。Further, the iron-silicon-aluminum alloy can obtain a magnetic thin film having excellent magnetic properties under the optimum conditions, but there is a problem in the reproducing method.
また、コバルト系アモルファス合金は薄膜の状態では優
れた特性を有するが、薄膜磁気ヘッドを製造する場合
に、加熱過程で磁気特性が劣化するので問題がある。Further, the cobalt-based amorphous alloy has excellent characteristics in a thin film state, but when manufacturing a thin film magnetic head, there is a problem that the magnetic characteristics deteriorate in the heating process.
さらに以上のいずれの材料もMHz以上の高周波領域では
著しく透磁率が低下するという問題もある。Further, all of the above materials also have a problem that the magnetic permeability remarkably decreases in the high frequency region of MHz or higher.
殊に、磁性薄膜でMHz以上の高周波領域まで高い透磁率
を維持するには微視的な異方性分散を低減することが必
要とされており、如何にしてこの様な磁気的に均質な薄
膜を作るかが問題であった。In particular, it is necessary to reduce the microscopic anisotropy dispersion in order to maintain a high magnetic permeability up to a high frequency region of MHz or higher in a magnetic thin film. The issue was whether to make a thin film.
これらの問題を解決するために現在精力的な研究が続け
られているが、まだ成功には至っていない。Energetic research is ongoing to solve these problems, but it has not been successful yet.
本発明は、従来の薄膜ヘッド等の磁心材料における高周
波領域での問題点を解消することを目的としている。An object of the present invention is to solve the problem in the high frequency region of the conventional magnetic core material such as a thin film head.
（ニ）問題点を解決するための手段及び作用 本発明は、高飽和磁束密度を有し、高周波領域迄透磁率
が低下せず、しかも熱安定性の良い磁性薄膜等の磁心材
料を提供することを目的としている。(D) Means and Actions for Solving Problems The present invention provides a magnetic core material such as a magnetic thin film having a high saturation magnetic flux density, a magnetic permeability that does not decrease even in a high frequency region, and a good thermal stability. Is intended.
本発明は、高飽和磁束密度、熱安定性の見地より金属系
の結晶質磁性薄膜について多くの実験を行い、殊に、75
乃至82％ニッケル−鉄合金に各種元素を添加したターゲ
ットを用いて成膜した薄膜について高周波の透磁率を調
査したところ、ニオブ及びタンタル或はさらにモリブデ
ンを添加した場合には、高周波迄高い透磁率を維持する
ことを発見し、また、その結果重量比で、ニッケル（N
i）75乃至82％、ニオブが2.95乃至7.10％、及びタンタ
ルが、0.03乃至0.07％、モリブデン（Mo）が２％以下、
残余が実質的に鉄（Fe）と不可避的不純物の組成よりな
る磁性薄膜が優れていることを見出したことに基づいて
いる。The present invention conducted a number of experiments on metallic crystalline magnetic thin films from the viewpoint of high saturation magnetic flux density and thermal stability, and
The high-frequency magnetic permeability of a thin film formed by using a target in which various elements were added to a nickel-iron alloy of 82% to 82% showed that when niobium and tantalum or molybdenum were added, the high magnetic permeability was increased to the high frequency. Was found to also maintain the nickel (N
i) 75 to 82%, niobium 2.95 to 7.10%, tantalum 0.03 to 0.07%, molybdenum (Mo) 2% or less,
It is based on the finding that a magnetic thin film whose balance consists essentially of iron (Fe) and inevitable impurities is superior.
即ち、本発明は、重量比で、ニッケルが75乃至82％、ニ
オブが2.95乃至7.10％、及びタンタルが、0.03乃至0.07
％、モリブデンが２％以下、及び残余が実質的に鉄と不
可避的不純物成分の組成よりなることを特徴とする高周
波磁気特性に優れる磁性薄膜にある。また本発明は、重
量比で、ニッケルが75乃至82％、ニオブが2.95乃至7.10
％、及びタンタルが、0.03乃至0.07％、モリブデンが２
％以下、及び残余が実質的に鉄と不可避的不純物成分の
組成の合金をターゲツトとし、3mTorr乃至25mTorrのア
ルゴン圧力下で、100Å／分以上の成膜速度のスパッタ
リング法により絶縁物上に成膜することを特徴とする高
周波磁気特性に優れる磁性薄膜の製造方法にある。That is, in the present invention, the weight ratio of nickel is 75 to 82%, niobium is 2.95 to 7.10%, and tantalum is 0.03 to 0.07.
%, Molybdenum is 2% or less, and the balance is substantially composed of iron and inevitable impurity components. In the present invention, the weight ratio of nickel is 75 to 82% and niobium is 2.95 to 7.10.
%, Tantalum 0.03 to 0.07%, molybdenum 2
% Or less, and the balance is substantially iron and an alloy of unavoidable impurity components as a target, and is deposited on an insulator by a sputtering method at a deposition rate of 100 Å / min or more under an argon pressure of 3 mTorr to 25 mTorr. And a method of manufacturing a magnetic thin film having excellent high-frequency magnetic properties.
本発明において、ニッケルは75乃至82％含有される。ニ
ッケルは75乃至82％の範囲で高い透磁率が得られるが、
最も望ましい範囲は79乃至81％である。ニッケル量が少
ない程飽和磁束密度は高くなるが透磁率は低下し、また
82％以上となると飽和磁束密度、透磁率ともに低下する
のでニッケルの範囲を75乃至82％とするのが好ましい。In the present invention, the nickel content is 75 to 82%. Nickel has a high magnetic permeability in the range of 75 to 82%,
The most desirable range is 79 to 81%. The smaller the amount of nickel, the higher the saturation magnetic flux density but the lower the magnetic permeability.
If it is more than 82%, both the saturation magnetic flux density and the magnetic permeability are lowered, so that the range of nickel is preferably 75 to 82%.
本発明において、ニオブが2.95乃至7.10％、及びタンタ
ルが、0.03乃至0.07％含有される。ニオブ及びタンタル
は非常に性質の近い元素であり、本発明の場合にも同じ
作用を有している。ニオブ及びタンタル量の増加ととも
に高周波領域の透磁率は高くなるが、５％附近で極大と
なりさらに増量すると透磁率の低下とともに飽和磁束密
度も低下させるので上限を８％とするのが好ましく、ま
た、１％以下では効果が小さいので下限を１％とするの
が好ましい。In the present invention, 2.95 to 7.10% niobium and 0.03 to 0.07% tantalum are contained. Niobium and tantalum are elements having very similar properties and have the same effect in the case of the present invention. The magnetic permeability in the high frequency region increases with an increase in the amount of niobium and tantalum, but reaches a maximum at around 5% and further increases, and the saturation magnetic flux density also decreases, so the upper limit is preferably 8%. If it is 1% or less, the effect is small, so the lower limit is preferably made 1%.
ニオブ、タンタル及びモリブデンはバルクのニッケル−
鉄合金の透磁率を高めるのに有効であることが知られて
いるが、固有抵抗値はそれ程高くはないので、例えば、
ニオブ７％及びモリブデン１％を含有する、ニッケル−
鉄−ニオブ−モリブデン合金（厚さ25μｍ）の場合、10
0KHzにおいては7000程度と高い透磁率を示すが、1MHzで
は600程度に急激に減少する。Niobium, tantalum and molybdenum are bulk nickel-
It is known to be effective in increasing the magnetic permeability of iron alloys, but since the specific resistance value is not so high, for example,
Nickel containing 7% niobium and 1% molybdenum
10 for iron-niobium-molybdenum alloy (thickness 25 μm)
It shows a high magnetic permeability of about 7,000 at 0 KHz, but decreases sharply to about 600 at 1 MHz.
勿論、高周波における透磁率は厚さが薄くなる程減少の
程度は少くなるので、薄膜化は有利なことであるが、こ
れ迄のバルクのデータを薄膜迄延長しても、本発明のよ
うに高い透磁率には到達せず、また、現在研究中の磁性
薄膜の中にも見受けられない。Of course, as the magnetic permeability at high frequencies decreases less as the thickness decreases, thinning is an advantage, but even if the bulk data up to now is extended to a thin film, it is still as in the present invention. It does not reach high magnetic permeability, nor is it found in the magnetic thin films currently being studied.
以上のように高周波領域まで高い透磁率を維持する磁性
薄膜を得ることは非常に困難で解決する手段も考えられ
ていなかったが、本発明により、はじめてその実現が可
能となった。As described above, it is extremely difficult to obtain a magnetic thin film that maintains a high magnetic permeability even in a high frequency region, and no means for solving it has been considered, but the present invention makes it possible for the first time to realize it.
モリブデンは単独での効果はないが、ニオブ及びタンタ
ルと同時に添加した場合には、ニオブ及びタンタルの効
果をさらに増加する作用がある。しかし、多量に添加す
ると飽和磁束密度を低下させるので２％以下とするのが
好ましい。Molybdenum has no effect by itself, but when added at the same time as niobium and tantalum, it has the effect of further increasing the effect of niobium and tantalum. However, addition of a large amount lowers the saturation magnetic flux density, so the content is preferably 2% or less.
以上のように本発明の磁性薄膜は、重量比で、ニッケル
75乃至82％、ニオブが2.95乃至7.10％、及びタンタル
が、0.03乃至0.07％、好ましくは、さらにモリブデン２
％以下、残余鉄と不可避的不純物とよりなる組成である
が、マンガン、ケイ素及びアルミニウム等の脱酸剤、或
はクロム、タングステン及び銅等を少量添加することが
できる。As described above, the magnetic thin film of the present invention has a weight ratio of nickel.
75 to 82%, niobium 2.95 to 7.10%, and tantalum 0.03 to 0.07%, more preferably molybdenum 2
% Or less, the composition is composed of residual iron and unavoidable impurities, but deoxidizing agents such as manganese, silicon and aluminum, or chromium, tungsten and copper can be added in small amounts.
本発明を実施する場合、本発明の組成の合金ターゲット
を用いて磁性薄膜を作る方が安定した薄膜が得易い。こ
の合金ターゲットを真空溶解により溶製する場合には、
ケイ素、アルミニウム、マンガン、チタン、カルシウム
及びマグネシウム等の脱酸剤は、単独で0.5％以下、合
計量で１％以下であれば使用することができる。また、
本発明組成にさらにクロム、タングステン、銅及びヴァ
ナジウムを少量添加すると透磁率を高める効果がある
が、飽和磁束密度を低下させるので本発明では必須成分
とはしていないが、少量であれば添加することができ
る。When carrying out the present invention, it is easier to obtain a stable thin film by making a magnetic thin film using the alloy target of the composition of the present invention. When melting this alloy target by vacuum melting,
Deoxidizing agents such as silicon, aluminum, manganese, titanium, calcium and magnesium can be used if they are 0.5% or less alone and 1% or less in total. Also,
Addition of a small amount of chromium, tungsten, copper and vanadium to the composition of the present invention has the effect of increasing the magnetic permeability, but since it reduces the saturation magnetic flux density, it is not an essential component in the present invention, but it is added in a small amount. be able to.
本発明における磁性薄膜は、アルゴンの圧力下にスパッ
タリング法により、適当な絶縁材料上に成膜させること
により作製される。The magnetic thin film in the present invention is produced by forming a film on an appropriate insulating material by a sputtering method under the pressure of argon.
この場合、スパッタリングをアルゴンの圧力を3mTorr乃
至25mTorr（３×10-3Torr〜25×10-3Torr）の範囲に維
持して行うと磁気特性が優れた薄膜が得られるので好ま
しい。In this case, it preferred because a thin film magnetic characteristics are excellent can be obtained when the sputtering performed while maintaining the range of the pressure of argon 3mTorr to 25mTorr (3 × 10 -3 Torr~25 × 10 -3 Torr).
本発明において、適当な絶縁物上に成膜された薄膜は、
５μ以下の厚さのものであり、単一層又は、絶縁物を介
して多重に積層されたものとすることができる。In the present invention, a thin film formed on a suitable insulator is
It has a thickness of 5 μm or less, and may be a single layer or multiple layers stacked with an insulator interposed therebetween.
（ホ）実施例 以下、添付図面及び表を参照して、本発明の実施の態様
の例について説明するが、本発明は、これら説明及び例
示により、何ら制限を受けるものではない。(E) Examples Hereinafter, examples of embodiments of the present invention will be described with reference to the accompanying drawings and tables, but the present invention is not limited by these descriptions and examples.
以下実施例に基づいて詳細に説明する。A detailed description will be given below based on Examples.
電解ニッケル、電解鉄、金属ニオブ、タンタル及び金属
モリブデンを所定量配合し、真空中で、その3kgを溶解
後、直径60m/mの金型に鋳込んだ。この鋳塊を熱間鍛造
し、機械加工により厚さ3m/m及び直径75m/mのターゲッ
トを作製した。A predetermined amount of electrolytic nickel, electrolytic iron, metallic niobium, tantalum, and metallic molybdenum was mixed, and 3 kg thereof was melted and then cast into a mold having a diameter of 60 m / m. This ingot was hot forged and machined to produce a target having a thickness of 3 m / m and a diameter of 75 m / m.
このターゲットを用い、アルゴン圧２乃至30mTorr、成
膜速度150Å／分乃至1000Å／分の条件下で、マグネト
ロン型RFスパッタ法により薄膜を作製した。その薄膜と
組成との関係を表−１に示したが、従来使用されている
ニッケル−鉄−モリブデン−銅合金に比して、ニオブ及
びタンタルの効果は顕著であり、さらにモリブデンを添
加した場合には透磁率はより改善されていることがわか
る。表−１の合金番号５の合金についてのアルゴン圧の
影響は表−２に示した如く5mTorr乃至17mTorrの範囲で
良好な特性が得られる。Using this target, a thin film was formed by a magnetron type RF sputtering method under conditions of an argon pressure of 2 to 30 mTorr and a film forming rate of 150 Å / min to 1000 Å / min. The relationship between the thin film and the composition is shown in Table-1. Compared with the nickel-iron-molybdenum-copper alloy conventionally used, the effect of niobium and tantalum is remarkable, and when molybdenum is further added. It can be seen that the magnetic permeability is further improved. As for the effect of the argon pressure on the alloy No. 5 in Table-1, as shown in Table-2, good characteristics are obtained in the range of 5 mTorr to 17 mTorr.
また、表−１の合金番号５の合金についてのアルゴン圧
8mTorrの場合における成膜速度と透磁率の関係を表−３
に、膜厚と透磁率の関係を表−４に示した。 Also, the argon pressure for alloy No. 5 in Table-1
Table 3 shows the relationship between the film deposition rate and the magnetic permeability at 8 mTorr.
Table 4 shows the relationship between the film thickness and the magnetic permeability.
表−２乃至表−４は、表−１の合金番号５の合金につい
てのものであるが、他の合金番号の合金についても略同
様の結果が得られる。Tables 2 to 4 are for the alloy of alloy number 5 in Table 1, but almost the same results are obtained for alloys of other alloy numbers.
表−３の場合には成膜速度の増加とともに透磁率は増大
しているが、最適な成膜速度はアルゴン圧によって異な
るので、アルゴン圧に応じて電力を調整し、成膜速度を
変える必要がある。 In the case of Table-3, the magnetic permeability increases as the film formation rate increases, but the optimum film formation rate differs depending on the argon pressure. Therefore, it is necessary to adjust the power according to the argon pressure to change the film formation rate. There is.
また、膜厚は0.4μｍ附近に透磁率の極大があるので実
際に磁気ヘッド等に応用する場合には、この附近の膜厚
に成膜し、必要な厚さに積層して使用することが望まし
い。Also, since the film thickness has a maximum magnetic permeability near 0.4 μm, when actually applying it to a magnetic head, etc., it is necessary to form a film with this film thickness near this and stack it to the required thickness. desirable.
第１図には、本発明に係る磁性薄膜の透磁率と周波数の
関係が示されている。FIG. 1 shows the relationship between magnetic permeability and frequency of the magnetic thin film according to the present invention.
本発明の磁性薄膜は、100KHzに於ける高い透磁率が13MH
z迄殆ど低下せず、非常に優れた特性を有していること
が明らかである。The magnetic thin film of the present invention has a high magnetic permeability of 13 MH at 100 KHz.
It is clear that it has very good characteristics with almost no decrease to z.
以上説明に用いた実施例の特性は、成膜したままの状態
についてであるが、これに焼鈍を施すことにより特性は
さらに向上する。また本発明に係る磁性薄膜は結晶質で
あるので熱安定性に優れており、薄膜ヘッドの製造時に
於ける加熱工程に於いても特性が劣化することはない。The characteristics of the examples used in the above description are for the as-deposited state, but the characteristics are further improved by annealing this. Since the magnetic thin film according to the present invention is crystalline, it is excellent in thermal stability, and its characteristics are not deteriorated even in the heating step in manufacturing the thin film head.
（ヘ）発明の効果 本発明に係る磁性薄膜は、高飽和磁束密度と優れた高周
波特性を有し、しかも熱安定性にも優れている。(F) Effect of the Invention The magnetic thin film according to the present invention has a high saturation magnetic flux density and excellent high frequency characteristics, and is also excellent in thermal stability.
したがって、8m/mVTR、Ｒ−DAT及びHDD等の高密度記録
の薄膜ヘッド用として、また今後益々必要となって来る
超高周波領域で使用される電子機器の磁心材料として非
常に有用である。Therefore, it is very useful as a thin film head for high-density recording such as 8 m / mVTR, R-DAT, and HDD, and as a magnetic core material for electronic equipment used in an ultrahigh frequency region which will become more and more necessary in the future.
第１図は、本発明に係る磁性薄膜の透磁率と周波数の関
係を示す図である。FIG. 1 is a diagram showing the relationship between magnetic permeability and frequency of a magnetic thin film according to the present invention.
Claims (2)
が2.95乃至7.10％、及びタンタルが、0.03乃至0.07％、
モリブデンが２％以下、及び残余が実質的に鉄と不可避
的不純物成分の組成よりなることを特徴とする高周波磁
気特性に優れる磁性薄膜。1. By weight ratio, nickel is 75 to 82%, niobium is 2.95 to 7.10%, and tantalum is 0.03 to 0.07%.
A magnetic thin film having excellent high-frequency magnetic properties, characterized in that molybdenum is 2% or less, and the balance is substantially composed of iron and inevitable impurity components.
が2.95乃至7.10％、及びタンタルが、0.03乃至0.07％、
モリブデンが２％以下、及び残余が実質的に鉄と不可避
的不純物成分の組成の合金をターゲツトとし、3mTorr乃
至25mTorrのアルゴン圧力下で、100Å／分以上の成膜速
度のスパッタリング法により絶縁物上に成膜することを
特徴とする高周波磁気特性に優れる磁性薄膜の製造方
法。2. A weight ratio of nickel is 75 to 82%, niobium is 2.95 to 7.10%, and tantalum is 0.03 to 0.07%.
The target is an alloy with a composition of molybdenum of 2% or less and the balance of iron and unavoidable impurity components, and the sputtering method at a deposition rate of 100Å / min or more under an argon pressure of 3 mTorr to 25 mTorr on the insulator. A method for producing a magnetic thin film having excellent high-frequency magnetic properties, which comprises forming a film on a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62284461A JPH07100835B2 (en) | 1987-11-11 | 1987-11-11 | Magnetic thin film and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62284461A JPH07100835B2 (en) | 1987-11-11 | 1987-11-11 | Magnetic thin film and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01127638A JPH01127638A (en) | 1989-05-19 |
| JPH07100835B2 true JPH07100835B2 (en) | 1995-11-01 |
Family
ID=17678834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62284461A Expired - Lifetime JPH07100835B2 (en) | 1987-11-11 | 1987-11-11 | Magnetic thin film and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07100835B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4466902B2 (en) * | 2003-01-10 | 2010-05-26 | 日鉱金属株式会社 | Nickel alloy sputtering target |
| US7622012B2 (en) | 2005-02-09 | 2009-11-24 | Mitsubishi Materials Corporation | Flat soft magnetic metal powder and composite magnetic material including the soft magnetic metal powder |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61252617A (en) * | 1985-05-01 | 1986-11-10 | Tohoku Metal Ind Ltd | Material for soft-magnetic thin film |
| JPS6237914A (en) * | 1985-08-13 | 1987-02-18 | Sumitomo Special Metals Co Ltd | Magnetically soft thin film having stabilized magnetic characteristic for change of thin film forming ambience |
| JPS62210607A (en) * | 1986-03-12 | 1987-09-16 | Matsushita Electric Ind Co Ltd | Soft magnetic alloy film and its formation method |
-
1987
- 1987-11-11 JP JP62284461A patent/JPH07100835B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01127638A (en) | 1989-05-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5439754A (en) | Ferromagnetic film, method of manufacturing the same, and magnetic head | |
| JP3759191B2 (en) | Thin film magnetic element | |
| JPS60220914A (en) | Magnetic thin film | |
| JPH07100835B2 (en) | Magnetic thin film and manufacturing method thereof | |
| JPH07116563B2 (en) | Fe-based soft magnetic alloy | |
| JPS63238268A (en) | Method for manufacturing sputtering targets | |
| JP3076141B2 (en) | Magnetic thin film target material and method of manufacturing the same, Fe-MC soft magnetic film and method of manufacturing the same, and magnetic head and magnetic recording / reproducing apparatus using the same | |
| JP3236171B2 (en) | Soft magnetic multilayer | |
| JPH0785452B2 (en) | Magnetic film and method for manufacturing the same | |
| JP2704157B2 (en) | Magnetic parts | |
| JPH0368744A (en) | Thin magnetic film | |
| JPS58192311A (en) | Laminated magnetic film | |
| JP3266564B2 (en) | Ultra-thin Fe-Al soft magnetic alloy | |
| JPH0519967B2 (en) | ||
| JP3058675B2 (en) | Ultra-microcrystalline magnetic alloy | |
| JPH0513366B2 (en) | ||
| JPH03263306A (en) | Magnetic film and magnetic head | |
| JPH08948B2 (en) | Fe-based magnetic alloy | |
| JP2556863B2 (en) | Fe-based magnetic alloy film | |
| JP2631860B2 (en) | Magnetic thin film | |
| JP2000100622A (en) | Magnetic thin film and magnetic head using the same | |
| JP2546275B2 (en) | Soft magnetic thin film | |
| JP2771664B2 (en) | Soft magnetic alloy film | |
| JP2635421B2 (en) | Soft magnetic alloy film | |
| JPH01239822A (en) | Magnetic thin film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081101 Year of fee payment: 13 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081101 Year of fee payment: 13 |