JPH07102488B2 - Electrostatic adsorption mechanism - Google Patents
Electrostatic adsorption mechanismInfo
- Publication number
- JPH07102488B2 JPH07102488B2 JP63230735A JP23073588A JPH07102488B2 JP H07102488 B2 JPH07102488 B2 JP H07102488B2 JP 63230735 A JP63230735 A JP 63230735A JP 23073588 A JP23073588 A JP 23073588A JP H07102488 B2 JPH07102488 B2 JP H07102488B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- electrostatic attraction
- electrostatic
- voltage
- adsorption
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Jigs For Machine Tools (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） この発明は、半導体ウェハー、半導体チップなどの物体
を吸着し、搬送または保持する場合等に用いられる静電
吸着機構に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic adsorption mechanism used for adsorbing, carrying or holding an object such as a semiconductor wafer or a semiconductor chip.
（従来の技術） 第４図は従来例の静電吸着機構の断面図である。第４図
に示す従来例の静電吸着機構において、例えばタングス
テンよりなる一対の電極１は、例えばアルミナセラミッ
クス等の誘電体２により支持されるとともに包囲されて
いる。この静電吸着機構は、直流電源４よりスイッチ３
をONすることにより高電圧を電極１に印加することで例
えばシリコンウェハー等の物体５を静電力で吸着し、ス
イッチ３をOFFすることによって静電力を焼失させ物体
５を離すものである。(Prior Art) FIG. 4 is a sectional view of a conventional electrostatic attraction mechanism. In the conventional electrostatic attraction mechanism shown in FIG. 4, a pair of electrodes 1 made of, for example, tungsten is supported and surrounded by a dielectric 2 such as alumina ceramics. This electrostatic attraction mechanism uses a DC power source 4 to switch 3
When a high voltage is applied to the electrode 1 by turning on, the object 5 such as a silicon wafer is attracted by electrostatic force, and by turning off the switch 3, the electrostatic force is burned off and the object 5 is released.
（発明が解決しようとする問題点） しかし、このような静電吸着機構では、物体５を離す場
合に、とりわけ電極１に印加する電圧が高くかつ長時間
（10〜20分程度）に及ぶとき、誘電体２の表面上に誘記
されている誘電体分極によって物体５が離脱しにくくな
り、離脱できないための搬送エラーが発生する等の欠点
があった。また印加する電圧が0.5kV程度の低いもので
あっても誘電体２の誘電率が高い場合には、または吸着
を強めようと物体５と誘電体２との接触面の平坦度を特
別良好にした場合には、やはり離脱しにくいという欠点
があった。(Problems to be Solved by the Invention) However, in such an electrostatic attraction mechanism, when the object 5 is separated, especially when the voltage applied to the electrode 1 is high and it extends for a long time (about 10 to 20 minutes). However, the dielectric polarization induced on the surface of the dielectric 2 makes it difficult for the object 5 to separate, and there is a drawback that a transport error occurs because the object 5 cannot be separated. Even if the applied voltage is as low as about 0.5 kV, the flatness of the contact surface between the object 5 and the dielectric 2 should be made particularly good when the dielectric constant of the dielectric 2 is high or in order to enhance the adsorption. If you do, there is a drawback that it is difficult to leave.
（発明の目的） 本発明の目的は、前記の静電吸着面からの物体の離脱し
にくさを解決し、迅速且つ安定に物体を離脱させること
を可能にした静電吸着機構の提供にある。(Object of the Invention) An object of the present invention is to provide an electrostatic adsorption mechanism that solves the difficulty of detaching an object from the electrostatic adsorption surface and enables an object to be rapidly and stably detached. .
（問題点を解決するための手段） 本発明は、物体と前記第１の誘電体との間に第２の誘電
体が交換容易な状態で具備されており、この第２の誘電
体は、物体を吸着する時間及び吸着のための前記電圧に
応じて全体の誘電体分極の大きさを交換によって所定の
ものに調整することができる誘電率を有するものである
という構成によって前記目的を達成したものである。(Means for Solving the Problems) According to the present invention, the second dielectric is provided between the object and the first dielectric in a state in which the second dielectric can be easily exchanged. The above object is achieved by a structure in which the size of the entire dielectric polarization can be adjusted to a predetermined value by exchange according to the time for adsorbing an object and the voltage for adsorption. It is a thing.
（実施例） 以下図を用いて本発明の実施例を詳しく説明する。(Example) An example of the present invention will be described in detail with reference to the drawings.
第１図は本発明の第１の実施例の静電吸着機構を示す断
面図である。この第１の実施例の静電吸着機構は、一対
の電極１を支持及び包囲している第１の誘電体２とシリ
コンウェハー等の導電性の物体５との間に、新たに第２
の誘電体６を設けている。第１の誘電体２はアルミナセ
ラミックスからなり、その厚さ（t1）は、50〜200μｍ
程度である。第２の誘電体６は、例えばポリイミドのよ
うな第１の誘電体２よりも誘電率の小さい異種の材料で
形成されている。第２の誘電体６は、第１の誘電体２の
表面に25〜50μｍ程度の厚さ（t2）で積層して形成され
ている。これによって、第２図に示すように、第１の誘
電体２のみならず第２の誘電体６にも、電極１に直流電
源４から高電圧を印加することで生じる誘電体分極が生
じる。FIG. 1 is a sectional view showing an electrostatic attraction mechanism of the first embodiment of the present invention. The electrostatic attraction mechanism of the first embodiment newly includes a second dielectric layer between a first dielectric body 2 supporting and surrounding a pair of electrodes 1 and a conductive body 5 such as a silicon wafer.
Is provided. The first dielectric 2 is made of alumina ceramics and has a thickness (t1) of 50 to 200 μm.
It is a degree. The second dielectric 6 is formed of a different material having a smaller dielectric constant than the first dielectric 2, such as polyimide. The second dielectric 6 is formed by laminating it on the surface of the first dielectric 2 with a thickness (t2) of about 25 to 50 μm. As a result, as shown in FIG. 2, not only the first dielectric 2 but also the second dielectric 6 is subjected to dielectric polarization caused by applying a high voltage from the DC power supply 4 to the electrode 1.
第２の誘電体６によって分極が弱められるために、スイ
ッチ６をOFFすることによって物体５は第２の誘電体６
の吸着面から容易に離脱できる。このように、第２の誘
電体６は、全体の誘電体分極の大きさを調整するために
設けられたものであり、物体５を吸着する時間や吸着の
ための電圧に応じて、全体の誘電体分極の大きさを交換
によって所定のものに調整することができる誘電率を有
するものが採用される。Since the polarization is weakened by the second dielectric 6, the object 5 is turned off by turning the switch 6 off.
Can be easily separated from the suction surface of. As described above, the second dielectric 6 is provided to adjust the magnitude of the entire dielectric polarization, and the second dielectric 6 can be adjusted according to the time for attracting the object 5 and the voltage for attraction. A material having a dielectric constant capable of adjusting the magnitude of the dielectric polarization to a predetermined value by exchange is adopted.
また第２の誘電体６の表面の平坦度を加減し、比較的柔
軟な材質等に適宜変更することで物体５の離脱特性をコ
ントロールすることも可能である。また、第２の誘電体
６は、交換容易な状態で具備されている。これは、例え
ば、シート状のものを第１の誘電体２に接着するという
構成によって達成される。このように、第２の誘電体６
を交換容易なものにしておくことによって、誘電体分極
の状態を印加電圧や吸着時間に応じて最適なものにする
ことができ、その結果、迅速かつ安定して物体５を離脱
させることができる。It is also possible to control the detachment characteristic of the object 5 by appropriately adjusting the flatness of the surface of the second dielectric 6 and appropriately changing the material to a relatively soft material. In addition, the second dielectric 6 is provided in a state where it can be easily replaced. This is achieved by, for example, a structure in which a sheet-shaped member is adhered to the first dielectric 2. Thus, the second dielectric 6
By making it easy to exchange, the state of dielectric polarization can be optimized according to the applied voltage and the adsorption time, and as a result, the object 5 can be quickly and stably detached. .
第３図は本発明の第２の実施例を示す断面図である。こ
の第２の実施例の静電吸着機構は、電極１が複数対であ
ること以外は第１の実施例と同じである。FIG. 3 is a sectional view showing a second embodiment of the present invention. The electrostatic attraction mechanism of the second embodiment is the same as that of the first embodiment except that the electrode 1 is a plurality of pairs.
（発明の効果） 本発明によれば迅速かつ安定に、静電吸着面から物体を
離脱させることが可能である。(Effects of the Invention) According to the present invention, it is possible to quickly and stably detach an object from the electrostatic attraction surface.
第１図は本発明の実施例の静電吸着機構を示す断面図。
第２図は静電吸着による誘電体分極を説明する図。第３
図は本発明の第２の実施例を示す断面図。第４図は従来
例の静電吸着機構の断面図。 １…電極、２…第１の誘電体、３…スイッチ、４…直流
電源、５…物体、６…第２の誘電体FIG. 1 is a sectional view showing an electrostatic attraction mechanism of an embodiment of the present invention.
FIG. 2 is a diagram for explaining dielectric polarization due to electrostatic attraction. Third
The figure is a sectional view showing a second embodiment of the present invention. FIG. 4 is a sectional view of a conventional electrostatic attraction mechanism. DESCRIPTION OF SYMBOLS 1 ... Electrode, 2 ... 1st dielectric material, 3 ... Switch, 4 ... DC power supply, 5 ... Object, 6 ... 2nd dielectric material
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭62−286248（ＪＰ，Ａ) 特開 昭57−196210（ＪＰ，Ａ) 特開 昭62−255039（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (56) Reference JP-A-62-286248 (JP, A) JP-A-57-196210 (JP, A) JP-A-62-255039 (JP, A)
Claims (2)
は一対あるいはそれ以上の対からなる電極に電圧を印加
して物体を静電吸着力によって吸着する静電吸着機構に
おいて、物体と前記第１の誘電体との間に第２の誘電体
が交換容易な状態で具備されており、この第２の誘電体
は、物体を吸着する時間及び吸着のための前記電圧に応
じて全体の誘電体分極の大きさを交換によって所定のも
のに調整することができる誘電率を有するものであるこ
とを特徴とする静電吸着機構。1. An electrostatic attraction mechanism for applying a voltage to an electrode composed of one or a pair or more pairs of electrodes surrounded by a first dielectric to attract an object by an electrostatic attraction force. A second dielectric is provided between the first dielectric and the first dielectric in an easy-to-exchange state, and the second dielectric has a size corresponding to the time for adsorbing the object and the voltage for the adsorption. An electrostatic adsorption mechanism having a dielectric constant capable of adjusting the magnitude of dielectric polarization to a predetermined value by exchange.
は誘電率を異にする異種の材料で形成されていることを
特徴とする特許請求の範囲第１項記載の静電吸着機構。2. The static dielectric according to claim 1, wherein the second dielectric is made of a different material having a different dielectric constant from that of the first dielectric. Electroadsorption mechanism.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63230735A JPH07102488B2 (en) | 1988-09-14 | 1988-09-14 | Electrostatic adsorption mechanism |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63230735A JPH07102488B2 (en) | 1988-09-14 | 1988-09-14 | Electrostatic adsorption mechanism |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0276658A JPH0276658A (en) | 1990-03-16 |
| JPH07102488B2 true JPH07102488B2 (en) | 1995-11-08 |
Family
ID=16912479
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63230735A Expired - Lifetime JPH07102488B2 (en) | 1988-09-14 | 1988-09-14 | Electrostatic adsorption mechanism |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07102488B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2960566B2 (en) * | 1991-03-29 | 1999-10-06 | 信越化学工業株式会社 | Electrostatic chuck substrate and electrostatic chuck |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH073395B2 (en) * | 1985-07-30 | 1995-01-18 | 弘道 藤田 | Soldering inspection method |
-
1988
- 1988-09-14 JP JP63230735A patent/JPH07102488B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0276658A (en) | 1990-03-16 |
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