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JPH07107732B2 - Magnetoresistive thin film head - Google Patents
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JPH07107732B2 - Magnetoresistive thin film head - Google Patents

Magnetoresistive thin film head

Info

Publication number
JPH07107732B2
JPH07107732B2 JP25395686A JP25395686A JPH07107732B2 JP H07107732 B2 JPH07107732 B2 JP H07107732B2 JP 25395686 A JP25395686 A JP 25395686A JP 25395686 A JP25395686 A JP 25395686A JP H07107732 B2 JPH07107732 B2 JP H07107732B2
Authority
JP
Japan
Prior art keywords
stress
film
yoke
head
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP25395686A
Other languages
Japanese (ja)
Other versions
JPS63108520A (en
Inventor
徹 吉良
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP25395686A priority Critical patent/JPH07107732B2/en
Priority to DE19863644388 priority patent/DE3644388A1/en
Publication of JPS63108520A publication Critical patent/JPS63108520A/en
Priority to US07/688,701 priority patent/US5155644A/en
Priority to US07/869,056 priority patent/US5225951A/en
Publication of JPH07107732B2 publication Critical patent/JPH07107732B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/33Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3916Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
    • G11B5/3919Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path
    • G11B5/3922Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure
    • G11B5/3925Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure the two parts being thin films
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/31Structure or manufacture of heads, e.g. inductive using thin films
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/31Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3109Details
    • G11B5/3113Details for improving the magnetic domain structure or avoiding the formation or displacement of undesirable magnetic domains

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Magnetic Heads (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、強磁性薄膜の磁気抵抗効果を応用した磁気抵
抗効果素子(以下MR素子と称す)を用いて、磁気記録媒
体に記録された信号の検出を行う磁気抵抗効果型薄膜ヘ
ッドに関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention is recorded on a magnetic recording medium using a magnetoresistive effect element (hereinafter referred to as an MR element) to which the magnetoresistive effect of a ferromagnetic thin film is applied. The present invention relates to a magnetoresistive thin film head that detects a signal.

〔従来の技術〕[Conventional technology]

強磁性薄膜の磁気抵抗効果を応用した磁気抵抗効果型薄
膜ヘッド(以下MRヘッドと称す)は、従来から多用され
ている巻線型磁気ヘッドと比較して、多くの利点を有す
ることが知られている。例えば、MRヘッドは、磁気記録
媒体に記録された磁化パターンから発生する信号磁界を
受け、これをMR素子の抵抗変化に基づく電圧変化として
取り出すものであって、このため、磁気記録媒体の移送
速度に依存することなく信号を再生することができる。
従って、MRヘッドは、磁気記録媒体の移送速度の低い場
合に、巻線型の磁気ヘッドよりも高出力の再生信号が得
られるという利点を有している。
It is known that a magnetoresistive effect type thin film head (hereinafter referred to as an MR head) that applies the magnetoresistive effect of a ferromagnetic thin film has many advantages as compared with a wound type magnetic head which has been widely used conventionally. There is. For example, the MR head receives a signal magnetic field generated from the magnetization pattern recorded on the magnetic recording medium and takes out this as a voltage change based on the resistance change of the MR element. The signal can be reproduced without depending on.
Therefore, the MR head has an advantage that a reproduction signal having a higher output can be obtained than that of the winding type magnetic head when the transfer speed of the magnetic recording medium is low.

従来のMRヘッドには、MR素子部をテープ摺動面から離し
て設け、磁気記録媒体にて発生した磁束をMR素子部まで
導くための磁束導入路となるヨークを配置した所謂ヨー
クタイプMRヘッド(以下YMRヘッドと称す)があり、こ
のYMRヘッドの方が、単体のMR素子にて薄膜磁気ヘッド
を構成するよりも、信号の分解能の向上やMR素子の耐久
性を向上するうえで有効である。近年では、このYMRヘ
ッドが固定ヘッド、ディジタル・オーディオ用再生ヘッ
ドとして注目されている(第8回日本応用磁気学会学術
講演概要集、1984年、14PB−11「ヨークタイプMRヘッド
の再生特性」参照)。
A so-called yoke type MR head in which the MR element part is provided away from the tape sliding surface in the conventional MR head, and a yoke serving as a magnetic flux introduction path for guiding the magnetic flux generated in the magnetic recording medium to the MR element part is arranged. (Hereinafter referred to as YMR head), and this YMR head is more effective in improving signal resolution and MR element durability than forming a thin film magnetic head with a single MR element. is there. In recent years, this YMR head has been attracting attention as a fixed head and a reproducing head for digital audio (refer to the 8th Annual Meeting of the Applied Magnetics Society of Japan, 1984, 14PB-11 “Reproduction characteristics of a yoke type MR head”). ).

従来のYMRヘッドは、第5図及び第6図に示すように、
磁気ヘッド用の基板11上に、絶縁層12と、両端部にリー
ド導体18・18を接続したMR素子13とがこの順に形成され
ており、これら基板11、絶縁層12、及びMR素子13上にギ
ャップ用絶縁膜14が形成されている。さらに、上記ギャ
ップ用絶縁膜14上には、上記基板11の端面と同一平面内
に端面を有する上側ヨーク16、及びこの上側ヨーク16と
間隙部を介して対向する上側ヨーク17が設けられてい
る。これら上側ヨーク16・17は、磁気テープ等の磁気記
録媒体15から検出した磁気記録信号の磁路を成してい
る。そして、上記の上側ヨーク16、MR素子13、及び上側
ヨーク17は、この順に磁気的に結合されている。
The conventional YMR head, as shown in FIG. 5 and FIG.
On the substrate 11 for the magnetic head, an insulating layer 12 and an MR element 13 having lead conductors 18, 18 connected to both ends thereof are formed in this order, and on the substrate 11, the insulating layer 12, and the MR element 13. An insulating film 14 for a gap is formed on. Further, on the gap insulating film 14, an upper yoke 16 having an end face in the same plane as the end face of the substrate 11, and an upper yoke 17 facing the upper yoke 16 with a gap therebetween are provided. . These upper yokes 16 and 17 form a magnetic path of a magnetic recording signal detected from the magnetic recording medium 15 such as a magnetic tape. The upper yoke 16, the MR element 13, and the upper yoke 17 are magnetically coupled in this order.

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

ところが、上記従来の構造では、MR素子13から得られる
出力信号の中には、MR素子13内部の磁化が不連続に変化
することに起因するバルク・ハウゼン・ノイズが含まれ
ており、このノイズは、上記YMRヘッドにおける出力信
号処理に対して極めて悪い影響を与えるという問題を有
している(前記第8回日本応用磁気学会学術講演概要集
(1984)14PB−11「ヨークタイプMRヘッドの再生特性」
参照)。
However, in the above conventional structure, the output signal obtained from the MR element 13 contains Barkhausen noise due to the discontinuous change in the magnetization inside the MR element 13. Has a problem that it has an extremely bad influence on the output signal processing in the YMR head (The above-mentioned 8th Annual Meeting of the Applied Magnetics Society of Japan (1984) 14PB-11 "Reproduction of yoke type MR head". Characteristic"
reference).

上記のバルク・ハウゼン・ノイズは、MR素子13内部の磁
化の不連続な変化に起因するものであるが、MR素子13内
部にて磁化が不連続に変化する根本的な原因には、MR素
子13内部の磁気異方性の乱れ(以下、異方性分散と称
す)が挙げられる。この異方性分散の原因は、第6図に
示すように、成膜時には、MR素子13はK−K′に示した
トラック幅方向のみに磁化容易軸を有する一軸異方性を
示すように形成されるが、YMRヘッドの完成時には、種
々の外的要因により、上記の一軸異方性が乱れた状態に
なっていることによるものである。上記の外的要因に
は、YMRヘッドの製造工程における熱履歴等により、MR
素子13の膜自体が劣化して異方性分散が増大すること、
また、MR素子13の膜に外部から応力が加わり、MR素子13
の膜中に、MR素子13膜の逆磁歪効果によって応力誘起さ
れる磁気異方性が発生すること、などが挙げられる。
The above-mentioned Barkhausen noise is caused by the discontinuous change in the magnetization inside the MR element 13, but the root cause of the discontinuous change in the magnetization inside the MR element 13 is the MR element. 13 Disturbance of magnetic anisotropy inside (hereinafter referred to as anisotropic dispersion). The cause of this anisotropic dispersion is that, as shown in FIG. 6, during film formation, the MR element 13 exhibits uniaxial anisotropy having an easy axis of magnetization only in the track width direction indicated by KK '. This is because the uniaxial anisotropy is disturbed due to various external factors when the YMR head is completed. The external factors mentioned above are due to the thermal history in the manufacturing process of the YMR head.
That the film itself of the element 13 deteriorates and anisotropic dispersion increases,
In addition, external stress is applied to the film of the MR element 13 and
In the above film, stress-induced magnetic anisotropy is generated by the inverse magnetostrictive effect of the MR element 13 film, and the like.

MR素子13の膜に加わる外部からの応力には、ギャップ用
絶縁膜14及び上側ヨーク16・17に発生する内部応力の反
作用としてMR素子13に加えられる力が考えられる。そし
て、上記のいずれの膜も内部応力は等方的と考えられる
ので、ギャップ用絶縁膜14のようにMR素子13の上に一様
に被着されている膜では、MR素子13に加わる応力は等方
的と考えられる。従って、上記ギャップ用絶縁膜14の内
部応力に基づく応力誘起の磁気異方性は、MR素子13には
発生しないと考えられる。しかしながら、上側ヨーク16
・17膜のようにMR素子13近傍にパターン化して被着され
ている膜からは、これらの膜がMR素子13に対し均一な配
置状態でないため、MR素子13に異方的な応力が加わる。
このため、MR素子13では、第7図に示すように、上記の
異方的な応力により応力誘起された磁気異方性が発生す
る。同図の如く、上側ヨーク16・17の内部応力を圧縮応
力δとすると、MR素子13には、トラック幅方向の引っ
張り応力δMRと、幅方向の圧縮応力δ′MRとが発生す
る。以下の説明では引っ張り応力>0として示し、圧縮
応力を応力<0として示す。
The external stress applied to the film of the MR element 13 may be a force applied to the MR element 13 as a reaction of the internal stress generated in the gap insulating film 14 and the upper yokes 16 and 17. Since the internal stress of any of the above films is considered to be isotropic, the stress applied to the MR element 13 in a film that is uniformly deposited on the MR element 13 like the gap insulating film 14 is Is considered isotropic. Therefore, it is considered that the stress-induced magnetic anisotropy based on the internal stress of the gap insulating film 14 does not occur in the MR element 13. However, the upper yoke 16
Anisotropy stress is applied to the MR element 13 from the film that is patterned and deposited in the vicinity of the MR element 13 like the 17th film, because these films are not arranged uniformly with respect to the MR element 13. .
Therefore, in the MR element 13, as shown in FIG. 7, magnetic anisotropy induced by stress is generated by the anisotropic stress. As shown in the figure, when the internal stress of the upper yokes 16 and 17 is the compressive stress δ Y , a tensile stress δ MR in the track width direction and a compressive stress δ ′ MR in the width direction are generated in the MR element 13. In the following description, tensile stress is shown as> 0 and compressive stress is shown as stress <0.

ここで、MR素子13の磁歪定数λが負である場合、応力
誘起の磁気異方性は、第8図に示すように、トラック幅
方向、即ち成膜時のMR素子13の異方性の方向と垂直なL
−L′方向に発生する。従って、上記MR素子13では、異
方性の向きが2軸になって、成膜時のMR素子13の磁気異
方性の方向が乱されることにより、異方性分散が増大
し、バルク・ハウゼン・ノイズが発生するようになる。
なお、第8図では、MR素子13上の異方性の方向を示して
おり、K−K′はMR素子13の膜蒸着時に付与された誘導
磁気異方性の方向を示し、L−L′は上側ヨーク16・17
の内部応力がMR素子13内に誘起する応力誘起の磁気異方
性の方向を示し、M−M′は上記の2つの磁気異方性が
合成された結果のMR素子13内の磁気異方性の方向を示し
ている。M−M′の方向は、MR素子13の長手方向より傾
いているため、磁化の不連続的な変化を引き起こし易く
なっている。
Here, when the magnetostriction constant λ s of the MR element 13 is negative, the stress-induced magnetic anisotropy is as shown in FIG. 8 in the track width direction, that is, the anisotropy of the MR element 13 during film formation. L perpendicular to the direction of
It occurs in the −L ′ direction. Therefore, in the MR element 13, the anisotropy direction becomes biaxial, and the direction of the magnetic anisotropy of the MR element 13 during film formation is disturbed, so that the anisotropy dispersion increases and the bulk・ Hausen noise is generated.
In FIG. 8, the direction of anisotropy on the MR element 13 is shown, and KK 'shows the direction of the induced magnetic anisotropy given at the time of film deposition of the MR element 13, and L-L ′ Is upper yoke 16 ・ 17
Indicates the direction of the stress-induced magnetic anisotropy induced in the MR element 13 by MM ', and MM' is the magnetic anisotropy in the MR element 13 as a result of combining the above two magnetic anisotropies. It shows the direction of sex. Since the direction of MM 'is inclined with respect to the longitudinal direction of the MR element 13, it is easy to cause a discontinuous change in magnetization.

一方、応力誘起の異方性を発生させないような、内部応
力が零となる上側ヨーク16・17を成膜することは、現実
的には困難である。即ち、ヨーク材には、Fe−Al−Si合
金、Ni−Fe合金等が用いられるが、スパッタ、蒸着、メ
ッキ等の成膜方法の何れを用いて上側ヨーク16・17膜を
成膜しても、上側ヨーク16・17膜には固有の内部応力が
発生する。このため、ヨーク材として要求される磁気特
性を十分に保ちつつ内部応力を小さくすることは不可能
である。従って、従来の構造では、ヘッド特性に有害な
影響を与えるバルク・ハウゼン・ノイズが解消されない
という問題があった。
On the other hand, it is practically difficult to form the upper yokes 16 and 17 in which the internal stress is zero so that stress-induced anisotropy does not occur. That is, as the yoke material, an Fe-Al-Si alloy, a Ni-Fe alloy, or the like is used, but the upper yoke 16/17 film is formed by any one of film forming methods such as sputtering, vapor deposition, and plating. However, internal stress peculiar to the upper yokes 16 and 17 film is generated. Therefore, it is impossible to reduce the internal stress while sufficiently maintaining the magnetic characteristics required for the yoke material. Therefore, the conventional structure has a problem that Barkhausen noise, which has a harmful effect on the head characteristics, cannot be eliminated.

〔問題点を解決するための手段〕[Means for solving problems]

本発明に係る磁気抵抗効果型薄膜ヘッドは、上記の問題
点を解決するために、基板上に、各々強磁性薄膜からな
る第1のヨークと、磁気抵抗効果素子と、第2のヨーク
とをこの順に磁気的に結合させて配設した磁気抵抗効果
型薄膜ヘッドにおいて、上記第1及び第2のヨークの内
部応力が、内部応力>0となるときには、磁気抵抗効果
素子の磁歪定数を磁歪定数<0に設定する一方、上記内
部応力が、内部応力<0となるときには、上記磁歪定数
を磁歪定数>0に設定したことを特徴とするものであ
る。
In order to solve the above-mentioned problems, a magnetoresistive effect thin film head according to the present invention has a first yoke, a magnetoresistive effect element, and a second yoke each made of a ferromagnetic thin film on a substrate. In the magnetoresistive thin film head magnetically coupled in this order, when the internal stress of the first and second yokes is> 0, the magnetostriction constant of the magnetoresistive element is changed to the magnetostriction constant. When the internal stress is set to <0 while the internal stress is set to <0, the magnetostriction constant is set to a magnetostriction constant> 0.

〔作 用〕[Work]

上記のように構成することによって、第1及び第2のヨ
ークに発生する内部応力により応力誘起される磁気抵抗
効果素子の磁気異方性の方向を、磁気抵抗効果素子の本
来の誘導磁気異方性の方向と一致させて、異方性分散の
発生を防止するものであり、これによりバルク・ハウゼ
ン・ノイズの発生を抑制することができる。
With the above configuration, the direction of the magnetic anisotropy of the magnetoresistive effect element, which is stress-induced by the internal stress generated in the first and second yokes, is changed to the original induced magnetic anisotropy of the magnetoresistive effect element. This is to prevent the occurrence of anisotropic dispersion by making it coincide with the direction of sex, and thus it is possible to suppress the generation of Barkhausen noise.

〔実施例〕〔Example〕

本発明の一実施例を第1図乃至第4図に基づいて説明す
れば、以下の通りである。
An embodiment of the present invention will be described below with reference to FIGS. 1 to 4.

磁気抵抗効果型薄膜ヘッドは、第1図に示すように、磁
気ヘッド用の基板1の一方の端面1aに磁気記録媒体2と
の摺動面が形成されている。上記基板1は、下側ヨーク
を成し、多結晶Ni−Znフェライト基板、或いは単結晶も
しくは多結晶Mn−Znフェライト基板等のフェライト基
板、または非磁性基板上にNi−Fe、Fe−Al−Si、もしく
はCo−Zr等の高透磁率薄膜を積層した高透磁率基板から
なる。また、上記磁気記録媒体2のトラック幅は、通
常、YMRヘッドが多トラック構成となるため、50μm程
度に設定される場合が多い。基板1上には上記端面1a付
近に絶縁層3が形成され、この絶縁層3の上面には、磁
気抵抗効果素子(以下、MR素子と称す)4が配設されて
いる。絶縁層3はSiO2等から成る。MR素子4は、Ni−Fe
或いはNi−Co等の強磁性薄膜のパーマロイ蒸着膜から成
り、膜厚が200Å乃至1000Åに、長さが略磁気記録媒体
2のトラック幅と同じ長さに設定されている。また、MR
素子4は、後述する上側ヨーク6・7に発生する内部応
力の向きの正負に対応するように磁歪定数が設定され、
上側ヨーク6・7の内部応力δが、δ>0となると
きには、磁気抵抗効果素子の磁歪定数λはλ<0に
設定される一方、上記内部応力δが、δ<0となる
ときには、上記磁歪定数λはλ>0に設定される。
さらに、MR素子13の作製の際には、MR素子13の磁化容易
軸は、トラック幅方向に選定される。MR素子13は、MR素
子13のトラック幅方向にセンス電流ISが流れることによ
り、磁気記録媒体15から発生する信号磁場をMR素子13の
両端の電圧変化に変換するものである。また、上記の基
板1、絶縁層3及びMR素子4上には、これらを被覆する
ようにギャップ用絶縁膜5が形成されている。このギャ
ップ用絶縁膜5は、SiO2等から成っている。さらに、ギ
ャップ用絶縁膜5の上には、各々強磁性薄膜からなり、
磁気記録媒体2から検出された磁気記録信号の磁路をな
す第1のヨークである上側ヨーク6と、第2のヨークで
ある上側ヨーク7とが、ギャップを挟んで対向配置に設
けられている。上側ヨーク16・17は、通常、0.5〜4.0μ
m程度の膜厚のパーマロイ膜にて作製されている。そし
て、上側ヨーク6、上記MR素子4、及び上側ヨーク7
は、この順に磁気的に結合されている。
In the magnetoresistive thin film head, as shown in FIG. 1, a sliding surface with the magnetic recording medium 2 is formed on one end surface 1a of a magnetic head substrate 1. The substrate 1 constitutes a lower yoke, and is a polycrystalline Ni-Zn ferrite substrate, a ferrite substrate such as a single-crystal or polycrystalline Mn-Zn ferrite substrate, or a non-magnetic substrate on which Ni-Fe, Fe-Al- is formed. It consists of a high-permeability substrate in which high-permeability thin films such as Si or Co-Zr are laminated. The track width of the magnetic recording medium 2 is often set to about 50 μm because the YMR head usually has a multi-track configuration. An insulating layer 3 is formed on the substrate 1 near the end face 1a, and a magnetoresistive effect element (hereinafter referred to as MR element) 4 is disposed on the upper surface of the insulating layer 3. The insulating layer 3 is made of SiO 2 or the like. MR element 4 is Ni-Fe
Alternatively, it is made of a ferromagnetic thin film of Permalloy such as Ni-Co, and the film thickness is set to 200Å to 1000Å and the length is set to be substantially the same as the track width of the magnetic recording medium 2. Also MR
The magnetostriction constant of the element 4 is set so as to correspond to the positive and negative directions of the internal stress generated in the upper yokes 6 and 7 described later,
When the internal stress δ Y of the upper yokes 6 and 7 is δ Y > 0, the magnetostriction constant λ S of the magnetoresistive effect element is set to λ S <0, while the internal stress δ Y is δ Y < When it becomes 0, the magnetostriction constant λ S is set to λ S > 0.
Furthermore, when manufacturing the MR element 13, the easy axis of magnetization of the MR element 13 is selected in the track width direction. The MR element 13 converts the signal magnetic field generated from the magnetic recording medium 15 into a voltage change across the MR element 13 when a sense current I S flows in the track width direction of the MR element 13. Further, on the substrate 1, the insulating layer 3 and the MR element 4, a gap insulating film 5 is formed so as to cover them. The insulating film 5 for the gap is made of SiO 2 or the like. Furthermore, on the gap insulating film 5, each is made of a ferromagnetic thin film,
An upper yoke 6 that is a first yoke and a second yoke that is a second yoke forming a magnetic path of a magnetic recording signal detected from the magnetic recording medium 2 and an upper yoke 7 that are second yokes are provided in an opposing arrangement with a gap therebetween. . The upper yokes 16 and 17 are usually 0.5 to 4.0μ
It is made of a permalloy film having a thickness of about m. Then, the upper yoke 6, the MR element 4, and the upper yoke 7
Are magnetically coupled in this order.

また、YMRヘッドでは、バイアス磁場発生用の電流IB
図示しないバイアス導体に流すことにより、MR素子13に
所要のバイアス磁場を与え、MR素子13の動作点を線型性
の良い点に移動させるように構成されている。
Further, in the YMR head, a current I B for generating a bias magnetic field is passed through a bias conductor (not shown) to apply a required bias magnetic field to the MR element 13 and move the operating point of the MR element 13 to a point having good linearity. Is configured.

上記の構成において、MR素子4には、前述の如く所定の
磁歪定数λが設定されている。上記MR素子4の磁歪定
数λは、MR素子4膜の作製条件により設定し得るもの
である。しかしながら、たとえば、Ni−Fe膜から成るMR
素子4では、Niの組成率が79〜82〔wt%〕の状態を境に
して、磁歪定数λの正負が反転するが、Ni−Fe膜の結
晶配向の影響をうけて磁歪定数λが変化するため、磁
歪定数λを零とするようにNi−Fe膜を作製することは
困難である(J.Appl.Phys.52(3),March 1981 p2474
〜p2476“The saturation magneto−striction of perm
alloy film"参照)。ところが、Ni−Fe膜の磁歪定数が
λの正或いは負となるように制御してMR素子4を作製
することは容易である。
In the above configuration, the MR element 4 has the predetermined magnetostriction constant λ S set as described above. The magnetostriction constant λ S of the MR element 4 can be set according to the manufacturing conditions of the MR element 4 film. However, for example, MR composed of Ni-Fe film
In the element 4, and the boundary conditions of the composition ratio of Ni is 79 to 82 [wt%], but positive and negative magnetostriction constant lambda S reversed, the magnetostriction constant under the influence of the crystal orientation of the Ni-Fe film lambda S order to make the transition, it is difficult to produce a Ni-Fe film as the zero magnetostriction constant λ S (J.Appl.Phys.52 (3), March 1981 p2474
~ P2476 "The saturation magneto-striction of perm
However, it is easy to manufacture the MR element 4 by controlling the magnetostriction constant of the Ni—Fe film to be positive or negative of λ S.

従って、上側ヨーク6・7の膜の内部応力δの向きの
正負に対応して、MR素子4の膜の磁歪定数λの正負を
選択し、上側ヨーク6・7の膜の内部応力によりMR素子
4の膜に逆磁歪効果を与え、その影響を少なくすること
が可能になる。ここでは、δ>0の場合に引っ張り応
力が、一方、δ<0の場合には圧縮応力が、上側ヨー
ク6・7の膜に生じているとする。即ち、上側ヨーク6
・7の膜の内部応力δの向きが負の場合、δの反作
用として、MR素子4に加わる外部応力δMR、δ′MRは、
第2図に示すように、長手方向に引っ張り応力、幅方向
に圧縮応力が働く。ここで、δMRはMR素子4の長手方向
の応力を示し、δ′MRは、MR素子4の幅方向の応力を示
している。上側ヨーク6・7膜の内部応力δの向きが
正の場合、δの反作用として、MR素子4に加わる外部
応力δMR、δ′MRは、第3図に示すように、長手方向に
圧縮応力、幅方向に引っ張り応力が働く。従って、上側
ヨーク6・7膜の内部応力δとMR素子4の磁歪定数λ
との関係を、 δ<0のときは、λ>0 δ>0のときは、λ<0 となるように設定することにより、第4図に示すよう
に、応力誘起の磁気異方性L−L′はMR素子4の長手方
向になる。この磁気異方性L−L′は本来の誘導磁気異
方性K−K′の方向と一致するため、合成された磁気異
方性M−M′の方向も、MR素子4の長手方向に一致す
る。このため、MR素子4内における磁化の不連続的な変
化が生じ難くなり、上側ヨーク6・7膜の内部応力は、
MR素子4の特性にバルク・ハウゼン・ノイズ等の悪影響
を与えない。
Therefore, the sign of the magnetostriction constant λ S of the film of the MR element 4 is selected depending on whether the direction of the internal stress δ Y of the film of the upper yokes 6 and 7 is positive or negative. An inverse magnetostrictive effect is given to the film of the MR element 4, and the influence can be reduced. Here, tensile stress in the case of [delta] Y> 0, whereas, in the case of [delta] Y <0 is compressive stress, and has occurred in the membrane of the upper yoke 6, 7. That is, the upper yoke 6
When the direction of the internal stress δ Y of the film of 7 is negative, the external stresses δ MR and δ ′ MR applied to the MR element 4 as a reaction of δ Y are
As shown in FIG. 2, tensile stress acts in the longitudinal direction and compressive stress acts in the width direction. Here, δ MR indicates the stress in the longitudinal direction of the MR element 4, and δ ′ MR indicates the stress in the width direction of the MR element 4. When the direction of the internal stress δ Y of the upper yoke 6 and 7 film is positive, the external stresses δ MR and δ ′ MR applied to the MR element 4 as a reaction of δ Y are, as shown in FIG. Compressive stress and tensile stress work in the width direction. Therefore, the internal stress δ Y of the upper yoke 6 and 7 film and the magnetostriction constant λ of the MR element 4 are
By setting the relationship with S such that δ Y <0, λ S > 0 δ Y > 0, λ S <0. The magnetic anisotropy L-L 'is in the longitudinal direction of the MR element 4. Since this magnetic anisotropy L-L 'coincides with the original direction of the induced magnetic anisotropy K-K', the direction of the synthesized magnetic anisotropy M-M 'is also in the longitudinal direction of the MR element 4. Match. Therefore, it becomes difficult for the discontinuous change in the magnetization in the MR element 4 to occur, and the internal stress of the upper yoke 6 and 7 films is
The characteristics of the MR element 4 are not adversely affected by Barkhausen noise and the like.

具体的な例を示すと、上側ヨーク6・7にNi−Feスパッ
タ膜、或いはCo−Crスパッタ膜を使用する場合、上側ヨ
ーク6・7膜の応力は一般的に圧縮応力になるため、MR
素子4の磁歪定数λを正に設定する。また、前記の上
側ヨーク6・7に、Ni−Fe蒸着膜、或いはNi−Feメッキ
膜を使用する場合、上側ヨーク6・7膜の応力が引っ張
り応力となるため、MR素子4の磁歪常数λを負に設定
する。その他のヨーク材を使用する場合も同様に、ヨー
ク材に発生する応力に対応してMR素子4の磁歪定数λ
の正負を選定する。
As a specific example, when a Ni-Fe sputtered film or a Co-Cr sputtered film is used for the upper yokes 6 and 7, the stress of the upper yokes 6 and 7 is generally a compressive stress.
The magnetostriction constant λ S of the element 4 is set to be positive. When a Ni-Fe vapor deposition film or a Ni-Fe plating film is used for the upper yokes 6 and 7, the stress of the upper yokes 6 and 7 becomes tensile stress, so that the magnetostriction constant λ of the MR element 4 is Set S to negative. Similarly, when using other yoke member, the magnetostriction constant of the MR element 4 in response to stress generated in the yoke material lambda S
Select the positive or negative of.

〔発明の効果〕〔The invention's effect〕

本発明の磁気抵抗効果型薄膜ヘッドは、以上のように、
基板上に、各々強磁性薄膜からなる第1のヨークと、磁
気抵抗効果素子と、第2のヨークとをこの順に磁気的に
結合させて配設した磁気抵抗効果型薄膜ヘッドにおい
て、上記第1及び第2のヨークの内部応力が、内部応力
>0となるときには、磁気抵抗効果素子の磁歪定数を磁
歪定数<0に設定する一方、上記内部応力が、内部応力
<0となるときには、上記磁歪定数を磁歪定数>0に設
定した構成である。これにより、第1及び第2のヨーク
に発生する内部応力により応力誘起される磁気抵抗効果
素子の磁気異方性の方向を、磁気抵抗効果素子の本来の
誘導磁気異方性の方向と一致させることができる。この
結果、磁気抵抗効果素子における異方性分散の発生が防
止され、バルク・ハウゼン・ノイズが少なくなる。よっ
て、磁気記録媒体からの信号を忠実に再生することので
きる磁気抵抗効果型薄膜ヘッドを実現することができる
という効果を奏する。
The magnetoresistive thin film head of the present invention, as described above,
A magnetoresistive effect thin-film head in which a first yoke, a magnetoresistive effect element, and a second yoke each made of a ferromagnetic thin film are magnetically coupled in this order on a substrate, And when the internal stress of the second yoke is greater than 0, the magnetostriction constant of the magnetoresistive effect element is set to be a magnetostriction constant <0, while when the internal stress is less than 0, the magnetostriction is The configuration is such that the constant is set to a magnetostriction constant> 0. As a result, the direction of the magnetic anisotropy of the magnetoresistive effect element, which is stress-induced by the internal stress generated in the first and second yokes, coincides with the original direction of the induced magnetic anisotropy of the magnetoresistive effect element. be able to. As a result, the occurrence of anisotropic dispersion in the magnetoresistive effect element is prevented, and Barkhausen noise is reduced. Therefore, it is possible to realize a magnetoresistive thin film head capable of faithfully reproducing a signal from the magnetic recording medium.

【図面の簡単な説明】[Brief description of drawings]

第1図乃至第4図は本発明の一実施例を示すものであっ
て、第1図は磁気抵抗効果型薄膜ヘッドを示す縦断面
図、第2図及び第3図はそれぞれ上側ヨークの内部応力
と、その応力に対して磁気抵抗効果素子に生ずる応力
と、磁気抵抗効果素子の磁歪定数との関係を示す説明
図、第4図は磁気抵抗効果素子の磁気異方性の方向を示
す説明図、第5図乃至第8図は従来例を示すものであっ
て、第5図は磁気抵抗効果型薄膜ヘッドを示す縦断面
図、第6図は磁気抵抗効果型薄膜ヘッドを示す平面図、
第7図は上側ヨークの内部応力と、その応力に対して磁
気抵抗効果素子に生ずる応力と、磁気抵抗効果素子の磁
歪定数との関係を示す説明図、第8図は磁気抵抗効果素
子の磁気異方性の方向を示す説明図である。 1は基板、4は磁気抵抗効果素子、6は上側ヨーク(第
1のヨーク)、7は上側ヨーク(第2のヨーク)であ
る。
1 to 4 show an embodiment of the present invention. FIG. 1 is a longitudinal sectional view showing a magnetoresistive thin film head, and FIGS. 2 and 3 are internal views of an upper yoke. Explanatory diagram showing the relationship between the stress, the stress generated in the magnetoresistive effect element with respect to the stress, and the magnetostriction constant of the magnetoresistive effect element, and FIG. 4 is an explanation showing the direction of the magnetic anisotropy of the magnetoresistive effect element. FIGS. 5 to 8 show a conventional example, FIG. 5 is a longitudinal sectional view showing a magnetoresistive effect thin film head, and FIG. 6 is a plan view showing a magnetoresistive effect thin film head.
FIG. 7 is an explanatory diagram showing the relationship between the internal stress of the upper yoke, the stress generated in the magnetoresistive effect element with respect to the stress, and the magnetostriction constant of the magnetoresistive effect element. FIG. 8 is the magnetic field of the magnetoresistive effect element. It is explanatory drawing which shows the direction of anisotropy. Reference numeral 1 is a substrate, 4 is a magnetoresistive effect element, 6 is an upper yoke (first yoke), and 7 is an upper yoke (second yoke).

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】基板上に、各々強磁性薄膜からなる第1の
ヨークと、磁気抵抗効果素子と、第2のヨークとをこの
順に磁気的に結合させて配設した磁気抵抗効果型薄膜ヘ
ッドにおいて、上記第1及び第2のヨークの内部応力
が、内部応力>0となるときには磁気抵抗効果素子の磁
歪定数を磁歪定数<0に設定する一方、内部応力<0と
なるときには上記磁歪定数を磁歪定数>0に設定したこ
とを特徴とする磁気抵抗効果型薄膜ヘッド。
1. A magnetoresistive thin film head in which a first yoke, a magnetoresistive effect element, and a second yoke each made of a ferromagnetic thin film are magnetically coupled in this order on a substrate. When the internal stresses of the first and second yokes are such that internal stress> 0, the magnetostriction constant of the magnetoresistive effect element is set to magnetostriction constant <0, while when the internal stress <0, the magnetostriction constant is set to A magnetoresistive effect thin film head characterized by setting a magnetostriction constant> 0.
JP25395686A 1985-12-27 1986-10-24 Magnetoresistive thin film head Expired - Fee Related JPH07107732B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP25395686A JPH07107732B2 (en) 1986-10-24 1986-10-24 Magnetoresistive thin film head
DE19863644388 DE3644388A1 (en) 1985-12-27 1986-12-24 Thin-film yoke-type magnetic head
US07/688,701 US5155644A (en) 1985-12-27 1991-04-22 Yoke thin film magnetic head constructed to avoid Barkhausen noises
US07/869,056 US5225951A (en) 1985-12-27 1992-04-16 Thin film magnetic head with reduced internal stresses

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25395686A JPH07107732B2 (en) 1986-10-24 1986-10-24 Magnetoresistive thin film head

Publications (2)

Publication Number Publication Date
JPS63108520A JPS63108520A (en) 1988-05-13
JPH07107732B2 true JPH07107732B2 (en) 1995-11-15

Family

ID=17258302

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25395686A Expired - Fee Related JPH07107732B2 (en) 1985-12-27 1986-10-24 Magnetoresistive thin film head

Country Status (1)

Country Link
JP (1) JPH07107732B2 (en)

Also Published As

Publication number Publication date
JPS63108520A (en) 1988-05-13

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