JPH07109850B2 - Semiconductor bonding equipment - Google Patents
Semiconductor bonding equipmentInfo
- Publication number
- JPH07109850B2 JPH07109850B2 JP1010502A JP1050289A JPH07109850B2 JP H07109850 B2 JPH07109850 B2 JP H07109850B2 JP 1010502 A JP1010502 A JP 1010502A JP 1050289 A JP1050289 A JP 1050289A JP H07109850 B2 JPH07109850 B2 JP H07109850B2
- Authority
- JP
- Japan
- Prior art keywords
- probe
- bonding
- wire
- semiconductor
- pellet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/0711—Apparatus therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07531—Techniques
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Wire Bonding (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体のボンディング装置に関し、特にボン
ディング後に異常検出機能に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor bonding apparatus, and more particularly, to an abnormality detecting function after bonding.
従来この種の半導体ボンディング装置は、第３図
（ａ），（ｂ）に示すように、ボンディング時のワイヤ
変形の異常が検出できる機能が備わっていなかった。Conventionally, this type of semiconductor bonding apparatus has not been equipped with a function of detecting abnormality in wire deformation during bonding, as shown in FIGS. 3 (a) and 3 (b).
上述した従来の半導体のボンディング装置は、ボンディ
ング時の不具合を検出する機能が備わっていなかったの
でワイヤ形状不良が生じた場合、後工程で除去しなけれ
ばならないという欠点があった。The conventional semiconductor bonding apparatus described above does not have a function of detecting a defect at the time of bonding, and therefore has a defect that if a wire shape defect occurs, it must be removed in a subsequent step.
本発明の半導体のボンディング装置は、半導体ペレット
の各電極と外部リードのボンディングワイヤによって接
続させるボンディング装置において、前記半導体ペレッ
トのボンディングワイヤが形成されている面の上方から
前記外部リードの上方まで前記ペレットと前記外部リー
ドとの間を跨ぐように延在するプローブを前記ボンディ
ングワイヤのワイヤループ規格上限と同一の高さに配置
し、かつ前記プローブと前記外部リードとの間に電圧を
印加して前記プローブと前記ボンディングワイヤとの導
通を検出する手段を備えたことを特徴とする。The semiconductor bonding apparatus of the present invention is a bonding apparatus in which each electrode of a semiconductor pellet is connected to a bonding wire of an external lead, wherein the pellet extends from above a surface of the semiconductor pellet on which the bonding wire is formed to above the external lead. And a probe extending so as to straddle between the external lead and the external lead are arranged at the same height as the wire loop standard upper limit of the bonding wire, and a voltage is applied between the probe and the external lead, It is characterized by further comprising means for detecting electrical continuity between the probe and the bonding wire.
上述した従来の半導体のボンディング装置に対し、本発
明のボンディング装置においては、ボンディング後、プ
ローブによりワイヤ形状の異常を検出できる。In contrast to the conventional semiconductor bonding apparatus described above, the bonding apparatus of the present invention can detect an abnormality in the wire shape with a probe after bonding.
次に本発明について図面を参照して説明する。第１図
（ａ），（ｂ）は、本発明の一実施例を示したものであ
る。プローブ１の位置をワイヤループ高さ規格上限と同
一にし、プローブ１とリードフレーム２間に電圧を印加
しておけば、ボンディング後プローブ１をワイヤ４上に
移動させることによりテスター部５によって電流を検出
し、ワイヤループ高さ異常を判定できる。すなわち、プ
ルーブ１は図示のとおりペレット３とリード２との間を
跨ぐように延在して配置されているので、ワイヤループ
高さ規定上限を越えた異常突出ボンディングワイヤを確
実に検出することができる。Next, the present invention will be described with reference to the drawings. 1 (a) and 1 (b) show an embodiment of the present invention. If the position of the probe 1 is made the same as the upper limit of the wire loop height standard and a voltage is applied between the probe 1 and the lead frame 2, by moving the probe 1 onto the wire 4 after bonding, an electric current is generated by the tester unit 5. It is possible to detect and detect abnormal wire loop height. That is, since the probe 1 is arranged so as to extend across the pellet 3 and the lead 2 as shown in the figure, it is possible to reliably detect an abnormally protruding bonding wire that exceeds the upper limit of the wire loop height. it can.
第２図（ａ），（ｂ）は、本発明の他の実施例を示した
ものである。同図に示す様にプローブ１の形状を変える
ことによりワイヤ４の高さ方向のみでなく、横方向への
変形の異常を検出することが可能となる。2 (a) and 2 (b) show another embodiment of the present invention. By changing the shape of the probe 1 as shown in the figure, it becomes possible to detect abnormal deformation of the wire 4 not only in the height direction but also in the lateral direction.
以上説明したように本発明は、半導体ボンディング装置
に本発明プローブを使用することにより、ワイヤ形状の
異常を検出できる効果がある。As described above, the present invention has the effect of detecting an abnormality in the wire shape by using the probe of the present invention in the semiconductor bonding apparatus.
第１図（ａ），（ｂ）はそれぞれ本発明の一実施例の断
面図及び平面図、第２図（ａ），（ｂ）はそれぞれ本発
明の他の実施例の正面図及び側面図、第３図（ａ），
（ｂ）はそれぞれ従来のボンディング装置で生じる可能
性のある不具合の例を示す断面図及び平面図である。 １……プローブ、２……リードフレーム、３……ペレッ
ト、４……ボンディングワイヤ、５……テスタ部。1 (a) and 1 (b) are a sectional view and a plan view of an embodiment of the present invention, and FIGS. 2 (a) and 2 (b) are a front view and a side view of another embodiment of the present invention, respectively. , FIG. 3 (a),
3B is a cross-sectional view and a plan view showing examples of problems that may occur in the conventional bonding apparatus. 1 ... Probe, 2 ... Lead frame, 3 ... Pellet, 4 ... Bonding wire, 5 ... Tester part.
Claims (1)
ボンディングワイヤによって接続させるボンディング装
置において、前記半導体ペレットのボンディングワイヤ
が形成されている面の上方から前記外部リードの上方ま
で前記ペレットと前記外部リードとの間を跨ぐように延
在するプローブを前記ボンディングワイヤのワイヤルー
プ規格上限と同一の高さに配置し、かつ前記プローブと
前記外部リードとの間に電圧を印加して前記プローブと
前記ボンディングワイヤとの導通を検出する手段を備え
たことを特徴とする半導体のボンディング装置。1. A bonding apparatus for connecting each electrode of a semiconductor pellet and an external lead by a bonding wire, wherein the pellet and the external portion are provided from above a surface of the semiconductor pellet on which a bonding wire is formed to above the external lead. A probe extending so as to straddle the lead is arranged at the same height as the wire loop standard upper limit of the bonding wire, and a voltage is applied between the probe and the external lead to provide the probe and the probe. A semiconductor bonding apparatus comprising means for detecting electrical continuity with a bonding wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1010502A JPH07109850B2 (en) | 1989-01-18 | 1989-01-18 | Semiconductor bonding equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1010502A JPH07109850B2 (en) | 1989-01-18 | 1989-01-18 | Semiconductor bonding equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02189948A JPH02189948A (en) | 1990-07-25 |
| JPH07109850B2 true JPH07109850B2 (en) | 1995-11-22 |
Family
ID=11751980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1010502A Expired - Fee Related JPH07109850B2 (en) | 1989-01-18 | 1989-01-18 | Semiconductor bonding equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07109850B2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53117979A (en) * | 1977-03-25 | 1978-10-14 | Hitachi Ltd | Tab short detector |
| JPS5863144A (en) * | 1981-10-12 | 1983-04-14 | Nec Home Electronics Ltd | Inspecting method for attitude of bonding wirings |
-
1989
- 1989-01-18 JP JP1010502A patent/JPH07109850B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02189948A (en) | 1990-07-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |