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JPH07109898B2 - Transparent resin-sealed semiconductor device - Google Patents
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JPH07109898B2 - Transparent resin-sealed semiconductor device - Google Patents

Transparent resin-sealed semiconductor device

Info

Publication number
JPH07109898B2
JPH07109898B2 JP63252807A JP25280788A JPH07109898B2 JP H07109898 B2 JPH07109898 B2 JP H07109898B2 JP 63252807 A JP63252807 A JP 63252807A JP 25280788 A JP25280788 A JP 25280788A JP H07109898 B2 JPH07109898 B2 JP H07109898B2
Authority
JP
Japan
Prior art keywords
package
resin package
resin
semiconductor device
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63252807A
Other languages
Japanese (ja)
Other versions
JPH02100374A (en
Inventor
文男 村山
満 金井
克実 大栗
高安 野本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP63252807A priority Critical patent/JPH07109898B2/en
Publication of JPH02100374A publication Critical patent/JPH02100374A/en
Publication of JPH07109898B2 publication Critical patent/JPH07109898B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Light Receiving Elements (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To improve the quality and increase the yield, preventing external stress from applying improperly to a resin package in the mold separating process of transfer molding, by making a light transmitting window section facing a semiconductor chip in the resin package a specular surface, making the upper and lower planes excluding the light transmitting window section matte surfaces, and besides making the peripheral side of the package a specular surface with a draft. CONSTITUTION:Concerning a resin package 5, the light-transmitting window section 5a of a package facing the photoelectric receiving plane of a semiconductor chip 1 is made to have a specular surface, and the upper and lower planes of a package excluding the region of the light transmitting window section is made to be matte surfaces 5b. In addition, the peripheral side 5c of the package is made to be a specular surface with a draft (taper angle theta). By doing this, when a die is opened in the mold separating process of transfer molding, external stress is prevented from being improperly applied to the resin package 5 being a molding, and troubles of the resin package 5 such as cracks, warps, or exfoliation of resin from sealed parts are securely prevented. Accordingly, the quality and yield of the products can be improved greatly.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、測光用受光素子などを対象に、半導体チップ
を透明樹脂パッケージ、特にトランスファ成形法でモー
ルドした樹脂パッケージに封止して成る透明樹脂封止形
半導体装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention is intended for photometric light-receiving elements and the like, and is formed by encapsulating a semiconductor chip in a transparent resin package, particularly a resin package molded by a transfer molding method. The present invention relates to a resin-sealed semiconductor device.

〔従来の技術〕[Conventional technology]

頭記した透明樹脂封止形半導体装置として、樹脂パッケ
ージの表面一部に、樹脂パッケージの内部に封止した受
光素子の受光面と対面する鏡面の透光窓部を形成すると
ともに、該透光窓部を除くパッケージ表面を全て梨地面
と成したものが特願昭62−329134として同じ出願人によ
り既に提案されている。
As the transparent resin-encapsulated semiconductor device described above, a part of the surface of the resin package is formed with a light-transmitting portion of a mirror surface facing the light-receiving surface of the light-receiving element sealed inside the resin package, and A package in which the surface of the package excluding the window is entirely satin has been already proposed by the same applicant as Japanese Patent Application No. 62-329134.

次に、上記した従来の透明樹脂封止形半導体装置の構成
を第5図に示す。図において、1は受光素子としての半
導体チップ、2は半導体チップ1をマウントしたダイパ
ット、3は外部リード、4はボンディングワイヤ、5が
透明樹脂パッケージである。ここで樹脂パッケージ5
は、半導体チップ1の受光面と対面する透光窓部5aの領
域Aが鏡面であり、該透光窓部5aを除く外表面(上,
下、側面)が全て梨地面5bとして形成されている。
Next, FIG. 5 shows the configuration of the above-mentioned conventional transparent resin-sealed semiconductor device. In the figure, 1 is a semiconductor chip as a light receiving element, 2 is a die pad on which the semiconductor chip 1 is mounted, 3 is an external lead, 4 is a bonding wire, and 5 is a transparent resin package. Resin package 5 here
Region A of the transparent window portion 5a facing the light receiving surface of the semiconductor chip 1 is a mirror surface, and the outer surface excluding the transparent window portion 5a (upper,
The lower and side surfaces are all formed as a satin surface 5b.

また、前記の樹脂パッケージ5は、第6図で示すトラン
スファ成形金型6を用いてモールドされる。ここで金型
6は上型6a,下型6bから成り、キャビテイ6cを画成する
金型の内周壁面は、前記樹脂パッケージ5の鏡面を成す
透光窓部5a,梨地面5bに対応する領域がそれぞれ平滑
面,粗面加工されている。そして、金型6に対し図示の
ように半導体チップなどをキャビテイ内にセットし、こ
の状態で透明樹脂を注入することにより、第5図のよう
に半導体チップ1などの部品を封止した樹脂パッケージ
5がモールドされる。
The resin package 5 is molded using a transfer molding die 6 shown in FIG. Here, the mold 6 is composed of an upper mold 6a and a lower mold 6b, and an inner peripheral wall surface of the mold defining the cavity 6c corresponds to the light-transmissive window portion 5a and the satin-finished surface 5b forming the mirror surface of the resin package 5. The areas are smoothed and roughened, respectively. Then, as shown in the figure, a semiconductor chip or the like is set in the mold 6 in the cavity, and a transparent resin is injected in this state to seal a component such as the semiconductor chip 1 as shown in FIG. 5 is molded.

このようにして作られた透明樹脂封止形半導体装置で
は、鏡面である透光窓部5aに入射する正規の測光光線は
そのまま透明樹脂5の層内を透過して半導体チップ1の
受光面に入射されるのに対し、透光窓部5a以外のパッケ
ージ表面に入射した周囲からの迷光は梨地面5bで殆どが
乱反射して散乱して導体チップ1に殆ど到達することが
なく、これにより半導体装置の動作特性の信頼性向上が
図れる。
In the transparent resin-sealed semiconductor device manufactured in this way, the regular photometric light beam incident on the light-transmitting window portion 5a, which is a mirror surface, passes through the layer of the transparent resin 5 as it is and reaches the light-receiving surface of the semiconductor chip 1. On the other hand, the stray light from the surroundings incident on the surface of the package other than the transparent window 5a is hardly diffused and scattered by the satin surface 5b and hardly reaches the conductor chip 1. The reliability of the operating characteristics of the device can be improved.

〔発明が解決しようとする課題〕[Problems to be Solved by the Invention]

ところで、前記した透明樹脂封止形半導体装置の樹脂パ
ッケージをトランスファ成形する場合には、製作面,特
に成形品を金型から離型する際に次汁のような問題点が
発生する。
By the way, when the resin package of the above-mentioned transparent resin-encapsulated semiconductor device is transfer-molded, problems such as the following juice occur on the manufacturing surface, particularly when the molded product is released from the mold.

すなわち、第5図で述べたように従来の樹脂パッケージ
5はパッケージ側面が梨地面であり、これに対応して第
6図に示したトランスファ成形金型6のキャビテイ周壁
面も粗面加工されている。ここで離型状態を表す第7図
で樹脂パッケージ5の外形コーナー部,およびこれに対
応する金型6の断面形状を拡大して示すと、図示から明
らかなように梨地面である樹脂パッケージ5の側面は、
凹凸状に成るアンダーカットの形状を呈している。この
ために、金型6の樹脂を注入して樹脂パッケージ5をモ
ールドした後、離型工程で金型6を矢印方向に開くと、
成形品である樹脂パッケージ側面の表面に形成された凸
部Pと金型側の壁面凸部Qとが干渉し合って両者の間に
かじりが生じる。
That is, as described with reference to FIG. 5, the conventional resin package 5 has a satin side surface on the package side, and correspondingly, the cavity peripheral wall surface of the transfer molding die 6 shown in FIG. 6 is also roughened. There is. Here, when the outer shape corner portion of the resin package 5 and the cross-sectional shape of the die 6 corresponding thereto are enlarged and shown in FIG. The side of
The shape of the undercut is uneven. For this reason, after injecting the resin of the mold 6 to mold the resin package 5, when the mold 6 is opened in the arrow direction in the releasing step,
The convex portion P formed on the surface of the side surface of the resin package, which is a molded product, and the wall surface convex portion Q on the die side interfere with each other, and galling occurs between them.

一方、透明な樹脂パッケージ5の成形材料であるエポキ
シ樹脂は、樹脂パッケージとしての透明度の維持を図る
ために通常は補強材を添加しないまま使用している。し
かしながら補強材を添加しないエポキシ樹脂は高温(80
℃以上)状態になると強度が低下する。このために前述
のように離型の過程で樹脂パッケージ5の金型6側から
かじりによる外部応力が加わると、樹脂パッケージ5に
クラック(割れ),反りが生じたり、半導体チップなど
の封止部品と樹脂との間が剥離するなどのトラブルが発
生し、これが品質,歩留りの低下を招く大きな原因とな
る。
On the other hand, the epoxy resin, which is a molding material for the transparent resin package 5, is usually used without adding a reinforcing material in order to maintain the transparency of the resin package. However, the epoxy resin without the addition of reinforcement is at high temperature (80
When the temperature rises above (° C), the strength decreases. Therefore, as described above, when external stress due to galling is applied from the mold 6 side of the resin package 5 in the releasing process, the resin package 5 is cracked or warped, or a sealing component such as a semiconductor chip is produced. Problems such as peeling between the resin and the resin occur, which is a major cause of deterioration in quality and yield.

なお、前記のような梨地面のアンダーカットに対応して
金型側のキャビテイ側面部にルーズコアなども設けて対
処することも考えられるが、この方式では金型構造が複
雑となり、特に多数個取りのトランスファ成形金型で殆
ど実用に供しえない。
Although it is possible to deal with the above-mentioned undercut of the matte surface by providing a loose core on the side surface of the cavity on the die side, this method complicates the die structure, and in particular, takes a large number of pieces. This transfer molding die can hardly be put to practical use.

本発明は上記の点にかんがみ成されたものであり、樹脂
パッケージに改良の手を加えることにより、半導体装置
としての動作特性面でいさささかの悪影響を与えること
なく、しかもトランスファ成形の離型過程で樹脂パッケ
ージに不当な外部応力が加わるのを回避して品質,歩留
りの向上が図れるようにした透明樹脂封止形半導体装置
を提供することを目的とする。
The present invention has been made in view of the above points, and by improving the resin package, it does not have a slight adverse effect on the operation characteristics of the semiconductor device, and the transfer molding can be easily released. An object of the present invention is to provide a transparent resin-encapsulated semiconductor device capable of avoiding an undesired external stress applied to a resin package in the process and improving quality and yield.

〔課題を解決するための手段〕[Means for Solving the Problems]

本発明は、上述の目的を達成するため、受光素子を含む
半導体チップをトランスファ成形法により透明樹脂パッ
ケージに封止して成る半導体装置であって、樹脂パッケ
ージにおける半導体チップと対面する透光窓部を粗さ0.
05μm以下の鏡面、該透光窓部を除くパッケージ上下面
を粗さ2〜15μmの梨地面とするとともに、パッケージ
側面を抜き勾配5〜15゜のテーパをつけた粗さ0.1〜0.3
μmの鏡面と成したことを特徴としている。
In order to achieve the above-mentioned object, the present invention is a semiconductor device in which a semiconductor chip including a light receiving element is sealed in a transparent resin package by a transfer molding method, and a transparent window portion facing the semiconductor chip in the resin package. The roughness 0.
A mirror surface of less than 05 μm, the upper and lower surfaces of the package excluding the light-transmitting window are made a matte surface with a roughness of 2 to 15 μm, and the side surface of the package is tapered with a draft of 5 to 15 °.
It is characterized by having a mirror surface of μm.

〔作用〕[Action]

上記のように樹脂パッケージの側面を鏡面と成すことに
よりこの部分にアンダーカットの形成がなく、かつ抜き
勾配のテーパを付けることにより、樹脂パッケージをモ
ールドするトランファ成形の離型工程では成形品である
樹脂パッケージと金型との間でかじりなどの干渉なしに
金型を開くことができ、これにより樹脂パッケージに不
当な外部応力の加わることがなくなる。
By forming the side surface of the resin package as a mirror surface as described above, there is no undercut in this part, and by tapering the draft, it is a molded product in the mold release process of the transfer molding for molding the resin package. The mold can be opened without galling or other interference between the resin package and the mold, which prevents the resin package from being applied with an undesired external stress.

一方、当該半導体装置を測光システムの製品に組込む場
合には、設計面で半導体装置に対し側方から余分な迷光
が入光するのを阻止するような遮光構造とするの一般的
である。しかも、受光素子の動作特性として、受光面に
対し正規な透光角度と直角に近い角度で側方から透光し
た迷光で受光素子が誤動作することは殆どない。したが
って半導体チップを封止した樹脂パッケージの側面を鏡
面と成しても、この側面に入射する迷光で半導体装置が
誤動作するなどの動作性能面での悪影響を及ぼすおそれ
はない。
On the other hand, when the semiconductor device is incorporated in a product of a photometric system, it is common to have a light-shielding structure that prevents extra stray light from entering the semiconductor device from the side in terms of design. In addition, as the operating characteristics of the light receiving element, the light receiving element rarely malfunctions due to stray light transmitted from the side at an angle close to a right angle with the regular light transmitting surface with respect to the light receiving surface. Therefore, even if the side surface of the resin package encapsulating the semiconductor chip is formed into a mirror surface, there is no risk of adversely affecting the operation performance such as malfunction of the semiconductor device due to stray light incident on this side surface.

〔実施例〕〔Example〕

第1図,第2図は本発明実施例の構成図、第3図は第1
図の半導体装置に対応するトランスファ成形金型の構成
断面図、第4図は離型状態を表した要部の部分拡大図で
あり、第5図,第7図に対応する同一部材には同じ符号
が付してある。
1 and 2 are configuration diagrams of an embodiment of the present invention, and FIG. 3 is a first diagram.
FIG. 4 is a partial cross-sectional view showing the structure of a transfer molding die corresponding to the semiconductor device shown in FIG. 4, and is a partially enlarged view of a main part showing a released state. The same members corresponding to FIGS. 5 and 7 are the same. The reference numeral is attached.

すなわち、本発明により半導体チップ1などを封止した
樹脂パッケージ5について、半導体チップ1の受光面と
対面するパッケージの透光窓部5aを鏡面、該透光窓部5a
の領域を除くパッケージの上下面を梨地面5bとするとと
もに、パッケージ周側面5cを抜き勾配のテーパ(テーパ
角度θ)をつけた鏡面と成して構成されている。また、
かかる樹脂パッケージ5をモールドするトランスファ成
形金型6は、第3図のように樹脂パッケージ5の周側面
5cと対応するキャビテイ6cの周側面が平滑に仕上げ加工
されている。
That is, in the resin package 5 in which the semiconductor chip 1 or the like is sealed according to the present invention, the transparent window portion 5a of the package facing the light receiving surface of the semiconductor chip 1 is a mirror surface, and the transparent window portion 5a is formed.
The upper and lower surfaces of the package excluding the area are formed as a satin-finished surface 5b, and the package peripheral side surface 5c is formed as a mirror surface having a tapered taper (taper angle θ). Also,
The transfer molding die 6 for molding the resin package 5 has a peripheral side surface of the resin package 5 as shown in FIG.
The peripheral side surface of the cavity 6c corresponding to 5c is finished smooth.

なお、実際の製品では、樹脂パッケージ5における透光
窓部5aの鏡面の粗さを0.05μmS以下、梨地面5bの粗さを
2〜15μmS程度、側面5cの粗さを0.1〜0.3μmS程度、ま
た抜き勾配の角度θを5〜15゜程度に設定し、この仕様
の条件に合わせてトランスファ成形金型6のキャビテイ
6cの壁面が平滑,粗面加工されている。
In the actual product, the roughness of the mirror surface of the translucent window 5a in the resin package 5 is 0.05 μmS or less, the roughness of the matte surface 5b is about 2 to 15 μmS, and the roughness of the side surface 5c is about 0.1 to 0.3 μmS. In addition, the draft angle θ is set to about 5 to 15 °, and the cavity of the transfer molding die 6 is adjusted according to the conditions of this specification.
The wall surface of 6c is smooth and roughened.

ここで、第3図の金型6を用いて樹脂パッケージ5をモ
ールドすると、トランスファ成形の離型工程で金型6を
開く際の状態は第4図で表すようになる。つまり樹脂パ
ッケージ5の周側面は鏡面を成していてアンダーカット
となる部分がないので、第7図で述べたような樹脂パッ
ケージ5と金型6との間のかじり干渉の発生がなく、こ
れにより樹脂パッケージ5に不当な外部応力を加えるこ
となく離型させて金型6より取出すことができるきる。
Here, when the resin package 5 is molded using the mold 6 of FIG. 3, the state when the mold 6 is opened in the releasing step of transfer molding is as shown in FIG. That is, since the peripheral side surface of the resin package 5 is a mirror surface and does not have an undercut portion, there is no galling interference between the resin package 5 and the mold 6 as shown in FIG. As a result, the resin package 5 can be released from the mold 6 without being unduly applied with an external stress.

なお、樹脂パッケージ5で封止された受光素子としての
半導体チップ1に対し、鏡面を成す樹脂パッケージ5の
周側面5cへ向けて側方より迷光を投光しても、受光素子
が誤動作するおそれのないことがテスト結果からも十分
確認されている。
Even if the semiconductor chip 1 as the light receiving element sealed by the resin package 5 emits stray light from the side toward the peripheral side surface 5c of the resin package 5 forming a mirror surface, the light receiving element may malfunction. It has been sufficiently confirmed from the test results that there is no such thing.

〔発明の効果〕〔The invention's effect〕

本発明による樹脂封止形半導体装置は、以上説明したよ
うに構成されているので、次記の効果を奏する。
Since the resin-encapsulated semiconductor device according to the present invention is configured as described above, it has the following effects.

(1)樹脂パッケージの周側面を抜き勾配のテーパを付
けた鏡面と成したことにより、トランスファ成形の離型
工程で金型を開く際に、成形品である樹脂パッケージに
不当な外部応力を加わることがなく、これにより樹脂パ
ッケージにクラック,反り、ないし封止部品と樹脂との
間が剥離するなどと言ったトラブルを確実に回避して製
品の品質,歩留りを大幅に向上できる。
(1) By forming the peripheral side surface of the resin package as a mirror surface with a taper of a draft, when the mold is opened in the releasing process of transfer molding, an undesired external stress is applied to the resin package as a molded product. As a result, problems such as cracks and warps in the resin package or peeling between the sealing component and the resin can be reliably avoided, and product quality and yield can be greatly improved.

(2)樹脂パッケージの側面を鏡面としたことにより半
導体装置の動作性能面に悪影響を及ぼすことなく、しか
も透光窓部を除く樹脂パッケージの上下面を梨地面とし
たことにより、周囲からの入射迷光による誤動作を防止
して半導体装置としての高信頼性が得られる。
(2) Since the side surface of the resin package is a mirror surface, it does not adversely affect the operation performance of the semiconductor device, and the upper and lower surfaces of the resin package excluding the light-transmitting window portion are a satin-finished surface to allow incident light from the surroundings. High reliability as a semiconductor device can be obtained by preventing malfunction due to stray light.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明実施例による樹脂封止形半導体装置の構
成断面図、第2図は第1図の上面図、第3図は第1図に
対応するトランスファ成形金型の構成図、第4図は第3
図の金型による離型状態を表した部分拡大図、第5図は
従来における樹脂封止形半導体装置の構成断面図、第6
図は第5図に対応するトランスファ成形金型の構成図、
第7図は第5図の金型による離型状態を表した部分拡大
図である。図において、 1:半導体チップ、5:透明樹脂パッケージ、5a:透光窓部
(鏡面)、5b:梨地面、5c:側面(鏡面)、6:トランスフ
ァ成形金型、θ:抜き勾配のテーパ角度。
FIG. 1 is a sectional view showing the structure of a resin-sealed semiconductor device according to an embodiment of the present invention, FIG. 2 is a top view of FIG. 1, and FIG. 3 is a structural view of a transfer molding die corresponding to FIG. 4 is the third
FIG. 5 is a partially enlarged view showing a releasing state by a mold in the figure, FIG. 5 is a sectional view showing the configuration of a conventional resin-sealed semiconductor device, and FIG.
The figure is a block diagram of the transfer mold corresponding to FIG.
FIG. 7 is a partially enlarged view showing a releasing state by the mold of FIG. In the figure, 1: semiconductor chip, 5: transparent resin package, 5a: translucent window (mirror surface), 5b: satin surface, 5c: side surface (mirror surface), 6: transfer molding die, θ: taper angle of draft .

フロントページの続き (72)発明者 野本 高安 神奈川県川崎市川崎区田辺新田1番1号 富士電機株式会社内 (56)参考文献 特開 昭63−153869(JP,A) 特開 昭63−21878(JP,A) 実開 昭51−60769(JP,U)Front Page Continuation (72) Inventor Takayasu Nomoto 1-1 Tanabe Nitta, Kawasaki-ku, Kawasaki-shi, Kanagawa Prefecture Fuji Electric Co., Ltd. (56) References JP 63-153869 (JP, A) JP 63- 21878 (JP, A) Actually open 51-60769 (JP, U)

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】受光素子を含む半導体チップをトランスフ
ァ成形法により透明樹脂パッケージに封止して成る半導
体装置であって、樹脂パッケージにおける半導体チップ
と対面する透光窓部を粗さ0.05μm以下の鏡面、該透光
窓部を除くパッケージ上下面を粗さ2〜15μmの梨地面
とするとともに、パッケージ側面を抜き勾配5〜15゜の
テーパをつけた粗さ0.1〜0.3μmと鏡面と成したことを
特徴とする透明樹脂封止形半導体装置。
1. A semiconductor device in which a semiconductor chip including a light receiving element is encapsulated in a transparent resin package by a transfer molding method, wherein a transparent window portion facing the semiconductor chip in the resin package has a roughness of 0.05 μm or less. The mirror surface and the upper and lower surfaces of the package excluding the light-transmitting window are made to have a matte surface with a roughness of 2 to 15 μm, and the side surface of the package is a mirror surface having a roughness of 0.1 to 0.3 μm with a taper of 5 to 15 °. A transparent resin-sealed semiconductor device characterized by the above.
JP63252807A 1988-10-06 1988-10-06 Transparent resin-sealed semiconductor device Expired - Lifetime JPH07109898B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63252807A JPH07109898B2 (en) 1988-10-06 1988-10-06 Transparent resin-sealed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63252807A JPH07109898B2 (en) 1988-10-06 1988-10-06 Transparent resin-sealed semiconductor device

Publications (2)

Publication Number Publication Date
JPH02100374A JPH02100374A (en) 1990-04-12
JPH07109898B2 true JPH07109898B2 (en) 1995-11-22

Family

ID=17242493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63252807A Expired - Lifetime JPH07109898B2 (en) 1988-10-06 1988-10-06 Transparent resin-sealed semiconductor device

Country Status (1)

Country Link
JP (1) JPH07109898B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3958864B2 (en) * 1998-05-21 2007-08-15 浜松ホトニクス株式会社 Transparent resin encapsulated optical semiconductor device
JP5936810B2 (en) 2009-09-11 2016-06-22 ローム株式会社 Light emitting device
JP7102675B2 (en) * 2017-05-09 2022-07-20 ローム株式会社 Optical equipment

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5160769U (en) * 1974-11-07 1976-05-13
JPH0719893B2 (en) * 1986-07-16 1995-03-06 キヤノン株式会社 Optical semiconductor device
JPS63153869A (en) * 1986-12-17 1988-06-27 Nec Corp Transfer molding equipment for optical semiconductor device

Also Published As

Publication number Publication date
JPH02100374A (en) 1990-04-12

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