JPH07114164B2 - Magnetic artificial lattice film - Google Patents
Magnetic artificial lattice filmInfo
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- JPH07114164B2 JPH07114164B2 JP62194985A JP19498587A JPH07114164B2 JP H07114164 B2 JPH07114164 B2 JP H07114164B2 JP 62194985 A JP62194985 A JP 62194985A JP 19498587 A JP19498587 A JP 19498587A JP H07114164 B2 JPH07114164 B2 JP H07114164B2
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- artificial lattice
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Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、磁気記録用薄膜ヘッドの磁極等に適する磁性
人工格子膜に関するものである。The present invention relates to a magnetic artificial lattice film suitable for a magnetic pole of a thin film head for magnetic recording and the like.
たとえば、磁気ファイル装置などの磁気記録密度を高く
しようとすると、記録媒体に保磁力(Hc)の大きい磁性
材料を用いると同時に、磁気ヘッドには記録媒体を十分
に磁化できる高飽和磁束密度(Bs)を有するものが必要
とされ、かつ記録媒体からのもれ磁束を効率よく集束す
るために、良好な軟磁性材料で構成されたものが必要と
なる。このような条件を満足するヘッドとして、従来、
フェライトを機械加工して得られるリングヘッドが使用
されてきた。しかし、高飽和磁束密度化と微細加工が限
界に近づいてきたために、現在はフォトリソグラフィ技
術を応用した微細加工技術と磁性薄膜によって得られた
薄膜磁気ヘッドが利用されている。ものような薄膜磁気
ヘッド用磁性薄膜には、従来真空蒸着,スパッタ,およ
びメッキ法によるNiFe合金(Bs〜1テスラ)が用いられ
ているが、1000エルステッド以上の高保磁力媒体に書き
込むことは困難である。ところで、近年新素材の研究が
盛んに行われているが、特に人工格子膜は、一層の厚み
が極めて薄く、それらの膜を周期的に積層することによ
り、それらを構成する層の本体の性質とは異なった特性
を示すために、バルクの性質とは全く異なった新しい性
質を示す物質として、物性の研究面でも、また応用面で
も注目されている。For example, when trying to increase the magnetic recording density of a magnetic file device, a magnetic material having a large coercive force (Hc) is used for the recording medium, and at the same time, the magnetic head has a high saturation magnetic flux density (Bs) that can sufficiently magnetize the recording medium. ) Is required, and in order to efficiently focus the leakage magnetic flux from the recording medium, the one made of a good soft magnetic material is required. As a head satisfying such a condition,
Ring heads obtained by machining ferrites have been used. However, since the high saturation magnetic flux density and the fine processing are approaching their limits, a thin film magnetic head obtained by the fine processing technology applying the photolithography technology and the magnetic thin film is currently used. NiFe alloys (Bs-1 Tesla) by vacuum deposition, sputtering, and plating have been used for magnetic thin films for thin-film magnetic heads, but it is difficult to write on high coercive force media of 1000 Oersteds or more. is there. By the way, although researches on new materials have been actively conducted in recent years, in particular, an artificial lattice film has an extremely small thickness, and by periodically laminating these films, the properties of the main body of the layers constituting them are improved. Since it exhibits different properties from, it has attracted attention in terms of physical properties as a substance showing new properties completely different from bulk properties, both in terms of physical properties and in applications.
高Bs強磁性金属膜として、Fe膜が有望であるが、結晶磁
気異方性が強く、保磁力が大きいため、そのままではヘ
ッド用磁極として使用できない。また、空気中で酸化し
やすいという欠点があり、実用化に際して障害となって
いる。従来、強磁性Fe金属膜の軟磁気特性を向上させる
方法としては、FeベースとしてCおよびSiを混入させて
いる。(たとえば、ボゾルフ著“フェロマズネティズ
ム",D.V.Nostrand Co.)しかし、この方法によるとCお
よびSiが非磁性であるため、Bsが低下するという欠点が
ある。また、スパッ法により、窒素雰囲気中でFe膜を形
成することにより、良好な軟磁性特性となるが、(たと
えば、J.Appl.Phys.61P3841(1987))この膜は熱安定
性に欠けるという問題がある。An Fe film is promising as a high Bs ferromagnetic metal film, but it cannot be used as a magnetic pole for a head as it is because of its strong crystal magnetic anisotropy and large coercive force. Further, it has a drawback that it is easily oxidized in the air, which is an obstacle to practical use. Conventionally, as a method of improving the soft magnetic characteristics of a ferromagnetic Fe metal film, C and Si are mixed as an Fe base. (For example, "Feromaznetism" by Bozolf, DV Norstrand Co.) However, according to this method, C and Si are non-magnetic, so that there is a drawback that Bs is lowered. Also, by forming a Fe film in a nitrogen atmosphere by the Spat method, good soft magnetic properties are obtained (for example, J.Appl.Phys. 61 P3841 (1987)), but this film lacks thermal stability. There is a problem.
そこで、強磁性Fe金属膜の特徴である高Bsを保持し、か
つ酸化しにくく、しかも保磁力の小さい良好な軟磁気特
性を有する強磁性膜の提供が強く要望されていた。Therefore, there has been a strong demand to provide a ferromagnetic film that retains high Bs, which is a characteristic of a ferromagnetic Fe metal film, is hard to oxidize, and has good soft magnetic characteristics with a small coercive force.
本発明の目的は、高Bsで、熱的に安定で、酸化しにく
く、良好な軟磁気特性を有し、磁歪定数を制御した磁性
人工格子膜を提供することにある。An object of the present invention is to provide a magnetic artificial lattice film having a high Bs, being thermally stable, being hard to oxidize, having good soft magnetic characteristics, and having a controlled magnetostriction constant.
本発明は、従来多用されているNi−Fe合金あるいは高Bs
材として有望とされているFe−Si,Fe−Cなどの合金膜
とは異なり、Ni層とFe層を交互に積層した磁性人工格子
膜であることを主要な特徴とする。Ni,Fe層は従来より
多用されている材料であるが、Ni層とFe層で人工格子膜
をつくることにより、たとえばFe層の結晶性がくずれ良
好な軟磁気特性に変化する、あるいは磁性部品の加工時
および磁化信号再生時に問題となる磁区構造を変化させ
る磁歪の影響をNiあるいはFe層の厚さおよび格子周期で
制御できる等、従来にない新しい現象を利用している。The present invention is a conventional Ni-Fe alloy or high Bs
Unlike alloy films such as Fe-Si and Fe-C, which are promising as materials, the main feature is that they are magnetic artificial lattice films in which Ni layers and Fe layers are alternately laminated. The Ni and Fe layers are materials that have been widely used, but by forming an artificial lattice film with the Ni layer and the Fe layer, for example, the crystallinity of the Fe layer collapses and changes to good soft magnetic characteristics, or magnetic parts A new phenomenon that has never existed before is utilized, such as the effect of magnetostriction that changes the magnetic domain structure, which is a problem during processing and reproduction of the magnetization signal, can be controlled by the thickness of the Ni or Fe layer and the lattice period.
本発明は、Ni層とFe層とが交互に積層された繰り返し周
期構造を有するものであるが、積層の周期は50nm以下と
される。その理由は、周期が50nmを超えると、保磁力が
4エルステッド以上となって磁気ヘッド用磁極として使
用し難くなるためである。The present invention has a repeating periodic structure in which Ni layers and Fe layers are alternately laminated, and the lamination cycle is 50 nm or less. The reason is that if the period exceeds 50 nm, the coercive force becomes 4 Oersted or more and it becomes difficult to use as a magnetic pole for a magnetic head.
また、各金属層の厚さは、Ni層の厚さを4nm以下とし、F
e層の厚さを46nm以下とする。その理由は、Ni層の厚み
が4nmを超えると、磁歪定数が負の大きい値となり、良
好な磁繰構造が得られなくなって磁気ヘッド用磁極とし
て使用し難くなるためである。In addition, the thickness of each metal layer, the thickness of the Ni layer is 4nm or less, F
The thickness of the e layer is 46 nm or less. The reason is that if the thickness of the Ni layer exceeds 4 nm, the magnetostriction constant becomes a large negative value, and a good magnetic repetitive structure cannot be obtained, making it difficult to use as a magnetic pole for a magnetic head.
以下、本発明の一実施例について説明する。 An embodiment of the present invention will be described below.
第2図に、本発明による人工格子膜を作製するための装
置の一例を示す。1,2はそれぞれNi,Feターゲットであ
り、3は人工格子膜を堆積させる基板である。4はター
ゲットをスパッタするためのイオン源であり、5はター
ゲットを支持するホルダを表わす。人工格子堆積中の動
作真空度が1×10-4Torr如何である点、また膜堆積中に
基板温度が必要以上に上昇しないという点で、イオンビ
ームスパッタ構成による装置が多層膜および人工格子膜
の作製に有利である。FIG. 2 shows an example of an apparatus for producing an artificial lattice film according to the present invention. Reference numerals 1 and 2 are Ni and Fe targets, respectively, and 3 is a substrate on which an artificial lattice film is deposited. Reference numeral 4 is an ion source for sputtering the target, and 5 is a holder for supporting the target. Since the operating vacuum degree during artificial lattice deposition is 1 × 10 −4 Torr and the substrate temperature does not rise more than necessary during film deposition, the apparatus using the ion beam sputtering structure is a multilayer film and an artificial lattice film. Is advantageous for producing.
上記の構成において、イオン源で発生したアルゴン等の
希ガスイオン1に示したターゲットに照射させ、スパッ
タにより基板3にNi層を堆積させる。そののち、ターゲ
ットホルダ5を回転させ、ターゲット2にイオンを照射
させ、基板にFe層を重ねて、堆積させる。このような手
順を繰り返し人工格子を形成する。なお、格子周期およ
びNi,Fe層の膜厚はスパッタ時間ならびにイオンの電流
密度により制御する。In the above structure, the target shown by the rare gas ion 1 such as argon generated by the ion source is irradiated, and the Ni layer is deposited on the substrate 3 by sputtering. After that, the target holder 5 is rotated, the target 2 is irradiated with ions, and the Fe layer is superposed and deposited on the substrate. This procedure is repeated to form the artificial lattice. The lattice period and the film thickness of the Ni and Fe layers are controlled by the sputtering time and the current density of ions.
第1図は、上記のようにして作製した人工格子膜の構成
を示す図である。FIG. 1 is a diagram showing the structure of the artificial lattice film produced as described above.
図に示すように、人工格子膜は、基板3上に、Ni層6と
Fe層7とが交互に積層された繰り返しによる周期構造を
有する。なお、ここで後の説明のためにNi層とFe層のそ
れぞれの厚さをt Ni,t Feとし、これら一層ずつより成
る人工格子一周期をtp(=t Ni+t Fe)で定義する。As shown in the figure, the artificial lattice film has a Ni layer 6 and a Ni layer 6 on the substrate 3.
The Fe layer 7 and the Fe layers 7 are alternately laminated to form a repeating periodic structure. Here, for the sake of later description, the thickness of each of the Ni layer and the Fe layer is defined as t Ni, t Fe, and one artificial lattice period consisting of each of these layers is defined as tp (= t Ni + t Fe).
第3図は本発明によるNi/Fe人工格子膜における飽和磁
束密度(Bs)のNi層,Fe層の厚さに対する変化を示す。
図に示すように、Ni,Fe層の膜厚を変えることにより、B
sを純Feの2.25Tから純Niの0.55Tまで変化させることが
可能である。FIG. 3 shows the change of the saturation magnetic flux density (Bs) in the Ni / Fe artificial lattice film according to the present invention with respect to the thickness of the Ni layer and the Fe layer.
As shown in the figure, by changing the thickness of the Ni and Fe layers, B
It is possible to change s from 2.25T for pure Fe to 0.55T for pure Ni.
第4図にNi,Fe層の膜厚比を1とした場合のBs,保磁力
(Hc)と格子周期tpの関係を示す。格子総数は全体膜厚
が600nmとなるように設定し、基板の温度は160度に設定
している。Ni層の膜厚比を50%としたため、Bsはほぼ1.
35T一定となっている。周期50nm以下ではHcは40e以下に
変化し、良好な軟磁気特性となった。このような磁気特
性の変化は次のように解釈される。FCC構造をもつNi層
上に成長した薄いFe層は結晶格子のミスフィットのため
本来のBCC構造をとることができず、結晶性の劣化した
状態でNi/Fe人工格子膜となる。(以上の事項はX線回
折,電子線回折により確認された。)このため、Fe層の
結晶磁気異方性がくずれ、磁界による誘導異方性がNi,F
eおよびNi/Fe層界面に誘起され、良好な軟磁気特性へと
変化したと考えられる。そのため、周期を大きくする
と、Fe層の性質が本来のバルクの性質の近づくため、Hc
は大きくなってこれが劣化したと考えられる。Fig. 4 shows the relationship between Bs, coercive force (Hc) and lattice period tp when the film thickness ratio of Ni and Fe layers is 1. The total number of lattices is set so that the total film thickness is 600 nm, and the temperature of the substrate is set to 160 degrees. Since the Ni layer thickness ratio is 50%, Bs is almost 1.
It is constant at 35T. When the period was 50 nm or less, Hc changed to 40e or less, and the good soft magnetic characteristics were obtained. Such a change in magnetic characteristics is interpreted as follows. The thin Fe layer grown on the Ni layer having the FCC structure cannot have the original BCC structure due to the misfit of the crystal lattice, and becomes the Ni / Fe artificial lattice film in the state where the crystallinity is deteriorated. (The above items were confirmed by X-ray diffraction and electron beam diffraction.) Therefore, the crystalline anisotropy of the Fe layer collapses, and the induced anisotropy due to the magnetic field is Ni, F.
It is considered that the soft magnetic properties were induced by the e and Ni / Fe layer interfaces and changed. Therefore, when the period is increased, the properties of the Fe layer come closer to the properties of the original bulk.
Is considered to have increased and deteriorated.
第5図に磁歪定数(λs)と格子周期の関係を示す。試
料は第4図と同じものである。周期4.7nmで磁歪定数が
0となり、ヘッド加工時あるいは磁化信号再生時におけ
る磁区構造に対する磁歪の影響が軽減できる。Ni−Fe合
金において磁歪定数0は、80wt%Ni,20wt%Feの組成で
実現でき、このときのBsはほぼ1Tである。本発明の一例
のNi/Fe人工格子においては磁歪0が1.35Tで実現でき
る。FIG. 5 shows the relationship between the magnetostriction constant (λs) and the lattice period. The sample is the same as in FIG. The magnetostriction constant becomes 0 at a period of 4.7 nm, and the influence of magnetostriction on the magnetic domain structure at the time of processing the head or reproducing the magnetization signal can be reduced. In the Ni-Fe alloy, a magnetostriction constant of 0 can be realized with a composition of 80 wt% Ni and 20 wt% Fe, and Bs at this time is almost 1T. In the Ni / Fe artificial lattice as an example of the present invention, a magnetostriction of 0 can be realized at 1.35T.
第6図はBs,HcとFe層膜厚(t Fe)の関係を示す。Ni層
の厚みは2および4nmとした。全体膜厚および基板温度
は600nm,160度に設定した。Fe層を厚くすることによ
り、Bsは増加し、Ni,Fe層の膜厚をそれぞれ2,10nmとす
ることにより、Bs〜1.96Tが実現できる。また、Fe層を4
nm以上とすることにより、Ni層膜厚に関わらず、10Oe以
下のHcをもった良好な軟磁気特性に変化する。FIG. 6 shows the relationship between Bs, Hc and the Fe layer film thickness (t Fe). The thickness of the Ni layer was 2 and 4 nm. The total film thickness and the substrate temperature were set to 600 nm and 160 degrees. By increasing the thickness of the Fe layer, Bs increases, and by setting the thicknesses of the Ni and Fe layers to 2 and 10 nm, respectively, Bs to 1.96T can be realized. Also, the Fe layer is 4
By setting the thickness to nm or more, good soft magnetic characteristics with Hc of 10 Oe or less are obtained regardless of the Ni layer thickness.
第7図にλsとFe層膜厚の関係を示す。Ni膜厚2nmの場
合、Fe膜厚1.5および10nmで磁歪定数0が実現できる。
このように、Ni層,Fe層をそれぞれ2nm,10nmに設定する
ことにより、Hcは10e以下、Bsは1.96Tとなり、同時に磁
歪定数0が実現できる。FIG. 7 shows the relationship between λs and the Fe layer thickness. When the Ni film thickness is 2 nm, the magnetostriction constant of 0 can be realized at the Fe film thicknesses of 1.5 and 10 nm.
Thus, by setting the Ni layer and the Fe layer to 2 nm and 10 nm, respectively, Hc is 10e or less and Bs is 1.96T, and at the same time, the magnetostriction constant 0 can be realized.
第8図は、Fe層を10nm一定とし、Ni層の膜厚を変化させ
たときのBsとHcの変化を示す。Ni層の膜厚を2nm以上と
することにより、良好な軟磁気特性と変化するが、Bsは
Ni層を厚くするとともに低下する。FIG. 8 shows changes in Bs and Hc when the thickness of the Ni layer was changed while the Fe layer was kept constant at 10 nm. By setting the thickness of the Ni layer to 2 nm or more, good soft magnetic characteristics change, but Bs is
It decreases as the Ni layer becomes thicker.
第9図は磁歪定数とNi層の関係を示したものである。Ni
層2nmで、磁歪定数0が実現できるが、Ni層を厚くする
につれ、負の大きな磁歪への変化する。以上のように、
Bsの低下およびλs〜0を実現するという点から、Ni層
を厚くすることは効果的でない。FIG. 9 shows the relationship between the magnetostriction constant and the Ni layer. Ni
A magnetostriction constant of 0 can be realized at a layer thickness of 2 nm, but as the Ni layer is made thicker, it changes to a large negative magnetostriction. As mentioned above,
The thickening of the Ni layer is not effective in terms of lowering Bs and achieving λs˜0.
第10図に、種々磁歪定数をもったNi/Fe人工格子膜の磁
区構造を示す。これらの磁区構造の磁歪定数にに対する
変化はNiFe合金等に見られるものと同様であり、磁歪定
数の小さい第10図(b)で良好な磁区構造を示してお
り、薄膜ヘッド等磁性部品に応用することを意味する。
さらに、一周期10nmのNi/Fe人工格子の磁気特性に及ぼ
す基板温度の影響を調べたところ、300度以上で若干の
周期乱れが出現するが、Bs,Hcにはほとんど影響が認め
られなかった。このことから、本発明によるNi/Fe人工
格子膜は熱的にも安定である。FIG. 10 shows magnetic domain structures of Ni / Fe artificial lattice films having various magnetostriction constants. The changes in the magnetostriction constants of these magnetic domain structures are similar to those found in NiFe alloys, etc., and a good magnetic domain structure is shown in Fig. 10 (b), which has a small magnetostriction constant, and is applied to magnetic parts such as thin film heads. Means to do.
Furthermore, when the influence of the substrate temperature on the magnetic properties of the Ni / Fe artificial lattice with a period of 10 nm was investigated, some period disturbance appeared at 300 degrees or more, but Bs and Hc were hardly affected. . From this fact, the Ni / Fe artificial lattice film according to the present invention is also thermally stable.
また、本発明のNi/Fe人工格子膜に、SiO2などの非磁性
絶縁膜を付加することにより、磁性膜の磁区制御ならび
に透磁率の周波数特性を改善できる。この場合の実施例
を第11図に示す。6はNi層、7はFe層、8は非磁性絶縁
層である。In addition, by adding a non-magnetic insulating film such as SiO 2 to the Ni / Fe artificial lattice film of the present invention, it is possible to improve the magnetic domain control of the magnetic film and the frequency characteristics of magnetic permeability. An embodiment in this case is shown in FIG. 6 is a Ni layer, 7 is a Fe layer, and 8 is a non-magnetic insulating layer.
以上の結果から明らかなように、本発明によるNi/Fe人
工格子膜は1.35から1.96Tの高Bsを制御でき、人工格子
の周期を50nm以下とすることにより、保磁力の小さい良
好な軟磁気特性を実現できる。また、Ni,Fe層をそれぞ
れ2および10nmに設定することにより、Bs〜1.96Tで磁
歪定数0を実現でき、磁性部品特有の磁区構造に及ぼす
磁歪の影響を軽減することが可能である。さらに、温度
300度以上においても、良好な軟磁気特性を維持し、熱
安定性にすぐれる。耐酸化性に関して、Fe層より酸化さ
れにくいNi層ではさみこんだ構造であるため、Ni/Fe人
工格子膜は酸化しにくくなっている。As is clear from the above results, the Ni / Fe artificial lattice film according to the present invention can control a high Bs of 1.35 to 1.96 T, and by setting the period of the artificial lattice to 50 nm or less, the coercive force of a good soft magnetic field is small. The characteristics can be realized. Further, by setting the Ni and Fe layers to 2 and 10 nm, respectively, a magnetostriction constant of 0 can be realized at Bs to 1.96T, and it is possible to reduce the effect of magnetostriction on the magnetic domain structure peculiar to the magnetic component. In addition, the temperature
Excellent soft magnetic properties are maintained and thermal stability is excellent even at temperatures above 300 degrees. Regarding the oxidation resistance, the Ni layer, which is more difficult to oxidize than the Fe layer, has a structure sandwiched between them, so that the Ni / Fe artificial lattice film is hard to oxidize.
以上説明したように、本発明によるNi/Fe人工格子膜
は、高Bsでかつ良好な軟磁気特性を有するため、薄膜ヘ
ッド等の磁極に利用した場合、高保磁力媒体の磁化信号
を効率よく記録再生できるという利点がある。また、Fe
層の厚さを変えることにより、磁歪定数を制御すること
ができ、磁性部品の加工時あるいは磁化信号再生時に問
題となる磁区構造に及ぼす磁歪の影響を軽減することが
可能となり、信頼性の高い磁性部品を製造できる。さら
に、Fe層を基本とし、Ni層を付加するためFe膜で起こり
やすい酸化腐食および熱不安定の問題を解決でき、信頼
性の高い薄膜ヘッドなどの磁性部品を歩留りよく製造で
きる利点がある。As described above, since the Ni / Fe artificial lattice film according to the present invention has high Bs and good soft magnetic characteristics, when used for a magnetic pole such as a thin film head, the magnetization signal of a high coercive force medium is efficiently recorded. It has the advantage of being reproducible. Also Fe
It is possible to control the magnetostriction constant by changing the layer thickness, and it is possible to reduce the effect of magnetostriction on the magnetic domain structure, which is a problem during processing of magnetic parts or reproduction of the magnetization signal. Can manufacture magnetic parts. Furthermore, since the Ni layer is added to the Fe layer as a base, the problems of oxidative corrosion and thermal instability that tend to occur in the Fe film can be solved, and there is an advantage that a highly reliable magnetic component such as a thin film head can be manufactured with high yield.
第1図は本発明の一実施例を示す断面図、第2図は本発
明による人工格子膜を作製するための装置の概略構成
図、第3図はBsの格子膜厚依存性を示す図、第4図はB
s,Hcの格子周期依存性を示す図、第5図はλsの周期依
存性を示す図、第6図はBs,HcのFe層膜厚依存性を示す
図、第7図はλsのFe層膜厚依存性を示す図、第8図は
Bs,HcのNi層膜厚依存性を示す図、第9図はλsのNi層
膜厚依存性を示す図、第10図(a)〜(c)は種々磁歪
定数をもつNi/Fe人工格子膜の磁区構造を示す図、第11
図は本発明の別の実施例を示す断面図である。 3……基板、6……Ni層、7……Fe層。FIG. 1 is a sectional view showing an embodiment of the present invention, FIG. 2 is a schematic configuration diagram of an apparatus for producing an artificial lattice film according to the present invention, and FIG. 3 is a diagram showing dependency of Bs on lattice film thickness. , Fig. 4 is B
Fig. 5 is a diagram showing the lattice period dependence of s, Hc, Fig. 5 is a diagram showing the period dependence of λs, Fig. 6 is a diagram showing the dependence of Bs, Hc on the Fe layer film thickness, and Fig. 7 is a diagram showing the dependence of λs on Fe. FIG. 8 shows the dependency of layer thickness,
Fig. 9 is a diagram showing the dependence of Bs and Hc on the Ni layer thickness, Fig. 9 is a diagram showing the dependence of λs on the Ni layer thickness, and Figs. 10 (a) to (c) are Ni / Fe artificial materials having various magnetostriction constants. Fig. 11 shows the magnetic domain structure of the lattice film.
The drawing is a cross-sectional view showing another embodiment of the present invention. 3 ... Substrate, 6 ... Ni layer, 7 ... Fe layer.
Claims (4)
た繰り返しによる周期構造を有し、その積層の周期が50
nm以下で、Ni層の厚さを4nm以下とし、Fe層の厚さを46n
m以下としたことを特徴とする磁性人工格子膜。1. A substrate has a repeating periodic structure in which Fe layers and Ni layers are alternately laminated, and the lamination period is 50.
the thickness of the Ni layer is 4 nm or less and the thickness of the Fe layer is 46 n or less.
A magnetic artificial lattice film having a thickness of m or less.
4.0nm〜5.4nmであることを特徴とする特許請求の範囲第
1項記載の磁性人工格子膜。2. When the thickness ratio of the Fe layer and the Ni layer is 1, the period is
The magnetic artificial lattice film according to claim 1, which has a thickness of 4.0 nm to 5.4 nm.
1〜2nm、若しくは9〜11nmであることを特徴とする特
許請求の範囲第1項記載の磁性人工格子膜。3. The magnetic artificial lattice film according to claim 1, wherein when the Ni layer has a thickness of 2 nm, the Fe layer has a thickness of 1 to 2 nm or 9 to 11 nm. .
1.5〜2.5nmであることを特徴とする特許請求の範囲第1
項記載の磁性人工格子膜。4. The thickness of the Ni layer is 10 nm when the thickness of the Fe layer is 10 nm.
Claim 1 characterized in that it is 1.5 to 2.5 nm.
The magnetic artificial lattice film according to the item.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62194985A JPH07114164B2 (en) | 1987-08-04 | 1987-08-04 | Magnetic artificial lattice film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62194985A JPH07114164B2 (en) | 1987-08-04 | 1987-08-04 | Magnetic artificial lattice film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6439012A JPS6439012A (en) | 1989-02-09 |
| JPH07114164B2 true JPH07114164B2 (en) | 1995-12-06 |
Family
ID=16333621
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62194985A Expired - Fee Related JPH07114164B2 (en) | 1987-08-04 | 1987-08-04 | Magnetic artificial lattice film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07114164B2 (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS599905A (en) * | 1982-07-09 | 1984-01-19 | Hitachi Ltd | Magnetic substance film |
| JP2502965B2 (en) * | 1984-10-19 | 1996-05-29 | 株式会社日立製作所 | Thin film magnetic head |
| JPS62164868A (en) * | 1986-01-16 | 1987-07-21 | Hitachi Ltd | Iron-nitrogen compound multilayer film and its preparation method |
| JPS63138712A (en) * | 1986-12-01 | 1988-06-10 | Hitachi Ltd | Magnetic multilayer film |
-
1987
- 1987-08-04 JP JP62194985A patent/JPH07114164B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6439012A (en) | 1989-02-09 |
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