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JP2543374B2 - Magnetic artificial lattice film - Google Patents
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JP2543374B2 - Magnetic artificial lattice film - Google Patents

Magnetic artificial lattice film

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Publication number
JP2543374B2
JP2543374B2 JP62228635A JP22863587A JP2543374B2 JP 2543374 B2 JP2543374 B2 JP 2543374B2 JP 62228635 A JP62228635 A JP 62228635A JP 22863587 A JP22863587 A JP 22863587A JP 2543374 B2 JP2543374 B2 JP 2543374B2
Authority
JP
Japan
Prior art keywords
magnetic
film
layer
artificial lattice
cofe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP62228635A
Other languages
Japanese (ja)
Other versions
JPS6473603A (en
Inventor
正勝 千田
靖浩 永井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
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Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP62228635A priority Critical patent/JP2543374B2/en
Publication of JPS6473603A publication Critical patent/JPS6473603A/en
Application granted granted Critical
Publication of JP2543374B2 publication Critical patent/JP2543374B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00Thin magnetic films, e.g. of one-domain structure
    • H01F10/32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Thin Magnetic Films (AREA)
  • Physical Vapour Deposition (AREA)
  • Magnetic Heads (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、磁気記録装置用磁気ヘッドの磁極に適した
磁性人工格子膜に関する。
The present invention relates to a magnetic artificial lattice film suitable for a magnetic pole of a magnetic head for a magnetic recording device.

〔従来の技術〕[Conventional technology]

例えば、磁気ファイル装置等の記録密度を高くしよう
とすると、磁気記録媒体には保磁力Hcの大きなものを用
い、磁気ヘッド側では磁気記録媒体を充分に磁化できる
高飽和磁束密度Bsを有し、且つ磁気記録媒体からの漏れ
磁束を効率良く集束するために良好な軟磁気特性を有
し、且つ磁区構造の制御が可能な磁性材料が必要とな
る。
For example, in order to increase the recording density of a magnetic file device or the like, a magnetic recording medium having a large coercive force Hc is used, and the magnetic head has a high saturation magnetic flux density Bs capable of sufficiently magnetizing the magnetic recording medium, In addition, a magnetic material having good soft magnetic characteristics and capable of controlling the magnetic domain structure is required in order to efficiently focus the leakage magnetic flux from the magnetic recording medium.

このような条件を満足する磁気ヘッドとして、従来で
はフェライトを機械加工して得られるリング型ヘッドが
使用されてきた。しかし、高飽和磁束密度化と微細加工
が限界に近づいてきたために、現在では、フォトリソグ
ラフ技術を応用した微細加工技術と薄膜化技術とによっ
て得られた薄膜磁気ヘッドが使用されている。
As a magnetic head satisfying such conditions, a ring type head obtained by machining ferrite has been used conventionally. However, since the high saturation magnetic flux density and the fine processing are approaching their limits, a thin film magnetic head obtained by the fine processing technology and the thinning technology to which the photolithography technology is applied is currently used.

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

このような薄膜磁気ヘッド用磁極膜には、従来、真空
蒸着、スパッタ、或いはメッキ法によるNiFe合金が用い
られてきたが、飽和磁束密度が1テスラ程度であるた
め、保磁力Hcが1000エルステッド以上の高保持力媒体に
磁化信号を記録することは困難てある。
Conventionally, a NiFe alloy formed by vacuum deposition, sputtering, or plating has been used for such a magnetic pole film for a thin film magnetic head. However, since the saturation magnetic flux density is about 1 tesla, the coercive force Hc is 1000 oersted or more. It is difficult to record a magnetizing signal on a high coercivity medium.

NiFe合金に代わる高飽和磁束密度の膜としてFe膜が有
望であるが、保磁力が大きく、また磁極膜に適した磁区
構造がとれないため、そのままでは磁極膜として使用で
きない。また、空気中で酸化し易いという欠点があり、
実用化に際して障害となっている。
The Fe film is promising as a film with a high saturation magnetic flux density to replace the NiFe alloy, but it cannot be used as it is as a magnetic pole film because it has a large coercive force and cannot have a magnetic domain structure suitable for the magnetic pole film. In addition, it has the drawback of being easily oxidized in air,
It is an obstacle to practical use.

一方、Fe膜の軟磁性化磁区構造制御の方法として、Fe
をホストとし、C或いはSi等の第二元素をゲストとして
混入させる方法がある(例:Bozorth著“FERROMAGNETIS
M",D.V.Nostrand Co.)。
On the other hand, as a method for controlling the soft magnetic domain structure of the Fe film, Fe
There is a method in which the second element such as C or Si is mixed as a guest by using as a host (eg, "FERROMAGNETIS" by Bozorth).
M ", DVNostrand Co.).

しかし、この方法ではC及びSiが非磁性体であるた
め、飽和磁束密度Bsが低下するという欠点がある。ま
た、スパッタ法により窒素雰囲気中でFe膜を形成するこ
とにより、良好な軟磁気特性となる(例:J.Appl.Phys.6
1 p3841('87))が、この膜は熱安定性に欠けるという
問題がある。
However, this method has a drawback that the saturation magnetic flux density Bs is lowered because C and Si are non-magnetic materials. Also, good soft magnetic properties can be obtained by forming a Fe film in a nitrogen atmosphere by the sputtering method (eg J.Appl.Phys. 6 ).
1 p3841 ('87)), but there is a problem that this film lacks thermal stability.

そこで、これらの膜に代わる高飽和磁束密度で良好な
軟磁気特性(保持力Hcが小さい)を有し、磁区構造制御
が可能で(磁歪定数λs≒0)、しかも酸化し難くく、
熱安定性にも優れた強磁性膜が強く要望されている。
Therefore, these films have high saturation magnetic flux density, good soft magnetic characteristics (coercive force Hc is small), magnetic domain structure control is possible (magnetostriction constant λs ≈ 0), and oxidation is difficult.
There is a strong demand for a ferromagnetic film having excellent thermal stability.

ところで最近、新素材の研究が盛んに行われている
が、特に、人工格子膜は各層の膜厚が極めて薄く、それ
らの膜を周期的に積層することにより、それらを構成す
る材料の本来の性質とは異なった特性を示すために、バ
ルクの性質とは全く異なった新しい性質を示す物質とし
て、物性の研究面でもまた、応用面でも注目されてい
る。
By the way, recently, new materials have been actively researched. In particular, artificial lattice films have extremely thin layers, and by periodically stacking these layers, the original material In order to exhibit properties different from those of the bulk, it has attracted attention both in terms of physical properties research and application as a substance exhibiting new properties completely different from bulk properties.

本発明は上述したような点に鑑みてなされたもので、
その目的は、高飽和磁束密度で良好な軟磁気特性を示
し、更に磁歪定数がほぼ零となり、同時に耐腐蝕性、熱
安定性に優れた磁性人工格子膜を提供することである。
The present invention has been made in view of the above points,
It is an object of the present invention to provide a magnetic artificial lattice film which has a high saturation magnetic flux density, exhibits excellent soft magnetic characteristics, has a magnetostriction constant of almost zero, and is also excellent in corrosion resistance and thermal stability.

〔問題点を解決するための手段〕[Means for solving problems]

このために本発明は、基板上にFe層とCoFe層を交互に
積層し、又は基板上にFe層とCo層をCoFe層を介在して交
互に積層して磁性人工格子膜を構成した。
Therefore, in the present invention, an Fe layer and a CoFe layer are alternately laminated on the substrate, or an Fe layer and a Co layer are alternately laminated on the substrate with a CoFe layer interposed to form a magnetic artificial lattice film.

本発明では、Fe層とCoFe層を交互に積層し、又はFe層
とCo層をCoFe層を介在して交互に積層してなる成る格子
膜が、非磁性絶縁膜により単磁区化されているように構
成することもできる。
In the present invention, a lattice film formed by alternately stacking Fe layers and CoFe layers or by alternately stacking Fe layers and Co layers with CoFe layers interposed is made into a single magnetic domain by a non-magnetic insulating film. It can also be configured as follows.

〔作用〕[Action]

Fe、Co、CoFeは単独では従来から使用されている材料
であるが、これらを積層させることにより、磁性層間の
相互作用及びFeの結晶性の乱れが生じ、保持力Hcが小さ
くなって良好な軟磁気特性を示す。また、各膜厚を適正
な値にすれば磁歪定数λsを零付近にすることができ、
磁区構造の制御が可能となる。
Fe, Co, and CoFe are materials that have been conventionally used by themselves, but by stacking these, interaction between magnetic layers and disorder of Fe crystallinity occur, and coercive force Hc becomes small, which is favorable. It exhibits soft magnetic properties. Further, if each film thickness is set to an appropriate value, the magnetostriction constant λs can be set to near zero,
It is possible to control the magnetic domain structure.

〔実施例〕〔Example〕

以下、本発明の実施例について説明する。第2図は人
工格子膜作成用の堆積装置を示す。1はターゲット支持
台であり、4枚のターゲットが装着でき、これを矢印で
示すように回転させることにより、ターゲットの切り替
えが可能となる。2はその上面に磁性膜を堆積形成すべ
き基板の設置位置、3はイオン源である。動作真空度が
1×10-4Torr以下である点、基板温度が必要以上に上が
らない点で、イオンビームスパッタ法による製作が有利
である。
Examples of the present invention will be described below. FIG. 2 shows a deposition apparatus for producing an artificial lattice film. Reference numeral 1 denotes a target support, on which four targets can be mounted, and the targets can be switched by rotating them as indicated by arrows. Reference numeral 2 is an installation position of a substrate on which a magnetic film is to be deposited and formed, and 3 is an ion source. The production by the ion beam sputtering method is advantageous in that the operating vacuum is 1 × 10 −4 Torr or less and the substrate temperature does not rise more than necessary.

第1図は本発明による人工格子膜の概略構造を示す図
である。4はCo層、6はFe層、5は相互拡散により形成
されたCoFe合金層、7は基板である。Co層4、Fe層6の
膜厚をそれぞれtCo、tFeとし、人工格子の一周期tpを tp=tCo+tFe で定義する。
FIG. 1 is a diagram showing a schematic structure of an artificial lattice film according to the present invention. 4 is a Co layer, 6 is a Fe layer, 5 is a CoFe alloy layer formed by mutual diffusion, and 7 is a substrate. The thicknesses of the Co layer 4 and the Fe layer 6 are t Co and t Fe , respectively, and one period t p of the artificial lattice is defined by t p = t Co + t Fe .

第3図にtCo=tFeとし、tpを変化させたときの磁歪定
数λsの変化を示す。tpを変化(増大)させることによ
り、磁歪定数λsが正から負に連続的に変化している。
CoとFeの磁歪定数λsはいずいれも負であるにも拘わら
ず、全体の磁歪定数λsは正または零の値をとることが
できる。これは、Co層4とFe層6との境界に正の磁歪定
数λsをもつCoFe合金層5が形成されたためである。
FIG. 3 shows changes in the magnetostriction constant λs when t p is changed with t Co = t Fe . By changing (increasing) t p , the magnetostriction constant λs continuously changes from positive to negative.
Although the magnetostriction constant λs of Co and Fe are both negative, the overall magnetostriction constant λs can take a positive or zero value. This is because the CoFe alloy layer 5 having a positive magnetostriction constant λs was formed at the boundary between the Co layer 4 and the Fe layer 6.

第4図(a)〜(c)にNiFe合金単膜等で観察される
磁区構造と磁歪定数λsの符号(正、負、零)との関係
を示す。磁気ヘッドの磁極膜では、媒体からの信号を効
率良く再生するために、第4図(b)に示すような磁区
構造をとることが必要であり、それには磁歪定数λs=
0であることが要求される。
4A to 4C show the relationship between the magnetic domain structure observed in a NiFe alloy single film or the like and the sign (positive, negative, zero) of the magnetostriction constant λs. In the magnetic pole film of the magnetic head, in order to efficiently reproduce the signal from the medium, it is necessary to have a magnetic domain structure as shown in FIG. 4 (b), which has a magnetostriction constant λs =
It is required to be 0.

上述したようにFe,Coの磁歪定数λsは負であり、CoF
e合金の磁歪定数λsは正であるが、これらを繰り返し
による周期構造となるように積層させて得た磁性人工格
子膜では、各磁性層間が磁気的につながっているため、
その磁区構造は単膜と同様に膜全体の磁歪定数λsの符
号によって決定される。
As described above, the magnetostriction constant λs of Fe and Co is negative, and CoF
Although the magnetostriction constant λs of the e alloy is positive, in the magnetic artificial lattice film obtained by laminating these so as to have a periodic structure by repetition, since the magnetic layers are magnetically connected,
The magnetic domain structure is determined by the sign of the magnetostriction constant λs of the entire film as in the single film.

第5図に磁歪定数λsのFe層膜厚依存性を示す。Co層
膜厚が20Å、5Åいずれの場合でも、Fe層膜厚を150Å
以上にすることにより、磁歪定数λs=0となる。
FIG. 5 shows the dependence of the magnetostriction constant λs on the thickness of the Fe layer. Regardless of whether the Co layer thickness is 20Å or 5Å, the Fe layer thickness is 150Å
By the above, the magnetostriction constant λs = 0.

第6図に保磁力HcのFe層膜厚依存性を示す。Co層の膜
厚を5Åに設定することにより、保磁力Hcが1.5エルス
テッドと少ない良好な軟磁気特性を実現できる。
Figure 6 shows the dependence of the coercive force Hc on the thickness of the Fe layer. By setting the film thickness of the Co layer to 5Å, good soft magnetic characteristics with a small coercive force Hc of 1.5 Oersted can be realized.

第7図に飽和磁束密度BsのFe層膜厚依存性を示す。Fe
をベースとしているため、2.15テスラ程度の値(Feの飽
和磁束密度Bsは2.15テスラ)が得られた。
Fig. 7 shows the dependency of the saturation magnetic flux density Bs on the Fe layer film thickness. Fe
Since it is based on, the value of about 2.15 Tesla (Fe saturation magnetic flux density Bs is 2.15 Tesla) was obtained.

第8図に飽和磁束密度BsとCo層膜厚比(tCo/tp)の関
係を示す。破線はFeの飽和磁束密度Bs=2.15テスラとCo
の飽和磁束密度Bs=1.76を結んだものである。データ点
が破線の上方にあるのは、相互拡散によるCoFe合金(Co
50Fe50の飽和磁束密度Bsは2.45テスラ)が形成されたた
めである。
FIG. 8 shows the relationship between the saturation magnetic flux density Bs and the Co layer thickness ratio (t Co / t p ). The broken line shows the saturation magnetic flux density of Fe Bs = 2.15 Tesla and Co
Saturation magnetic flux density Bs = 1.76 is connected. The data points above the dashed line are the CoFe alloy (Co
This is because the saturation magnetic flux density Bs of 50 Fe 50 is 2.45 tesla).

第9図にFe層膜厚を50Åに固定した場合の保磁力Hcと
磁歪定数λsのCo層膜厚依存性を示す。良好な軟磁気特
性を得るためには、50ÅのFe層に対してCo層の膜厚は10
Å以下に設定した方がよいことが分かる。また磁歪定数
λsの変化の様子からCo−Fe相互拡散層の膜厚は、10Å
程度であると予想される。
FIG. 9 shows the dependence of the coercive force Hc and the magnetostriction constant λs on the Co layer thickness when the Fe layer thickness is fixed at 50Å. In order to obtain good soft magnetic characteristics, the film thickness of the Co layer is 10 for the Fe layer of 50Å.
Å It turns out that it is better to set below. From the state of change of the magnetostriction constant λs, the film thickness of the Co-Fe interdiffusion layer is 10Å
Expected to be moderate.

以上の結果から、Coの純粋層は飽和磁束密度Bsが小さ
く保磁力Hcが大きく、また磁歪定数λsは負の大きな値
を持つため、磁性人工格子膜の磁気特性を劣化させてい
ることが分かる。従って、必要Co層は、Fe層と合金化す
る最小限の膜厚で良いことが分かる。そこで、FeとCoFe
合金をターゲットに用いたFe/CoFeの磁性人工格子も充
分考えられる。
From the above results, it can be seen that the pure Co layer has a small saturation magnetic flux density Bs, a large coercive force Hc, and a large negative magnetostriction constant λs, which deteriorates the magnetic characteristics of the magnetic artificial lattice film. . Therefore, it is understood that the required Co layer has a minimum film thickness that alloys with the Fe layer. So Fe and CoFe
A magnetic artificial lattice of Fe / CoFe using an alloy as a target is also conceivable.

第10図にFe/CoFe磁性人工格子膜の構成例を示す。Fe
層6、CoFe層5の膜厚、及びCoFe層5の組成を変えるこ
とにより、Fe/Co磁性人工格子膜と同様或いはそれ以上
の軟磁気特性及び高飽和磁束密度Bsを実現できる。
Figure 10 shows an example of the structure of a Fe / CoFe magnetic artificial lattice film. Fe
By changing the film thicknesses of the layer 6, the CoFe layer 5, and the composition of the CoFe layer 5, it is possible to realize the soft magnetic characteristics and the high saturation magnetic flux density Bs which are similar to or higher than those of the Fe / Co magnetic artificial lattice film.

第11図に本発明による〔Fe、Co、CoFe〕系人工格子と
SiO2、Al2O3等の非磁性絶縁体との多層膜の構成例を示
す。8は磁性人工格子膜、9は非磁性絶縁膜である。磁
性人工格子膜8の間に非磁性絶縁膜9を挟むことによっ
て、磁性膜の単磁区化が可能となる。
FIG. 11 shows a [Fe, Co, CoFe] -based artificial lattice according to the present invention.
A configuration example of a multilayer film with a non-magnetic insulator such as SiO 2 or Al 2 O 3 will be shown. Reference numeral 8 is a magnetic artificial lattice film, and 9 is a non-magnetic insulating film. By sandwiching the non-magnetic insulating film 9 between the magnetic artificial lattice films 8, the magnetic film can be made into a single magnetic domain.

すなわち、第1図あるいは第10図に示した積層構造の
磁性人工格子膜のみの場合は、その磁区構造が第4図に
示したような多数の磁区からなる還流磁区構造となるの
が最も静磁エネルギーの低い安定な状態であり、したが
ってこの場合は単磁区とならず多磁区の還流磁区構造と
なるのであるが、第11図に示したように磁性人工格子膜
8の間に非磁性絶縁膜9を挟んだ多層膜にすると、磁性
人工格子膜8の相互間に静磁結合力が働き、例えば表面
から第1層目の磁性人工格子膜では磁化方向が第11図で
右向き、第2層目では左向き、第3層目では右向き、第
4層目では左向き、・・・・というように、交互に磁化
が逆方向を向いた状態(各磁性人工格子膜では全磁化が
一方向を向いた状態、つまり単磁区構造)が、最も静磁
エネルギーの低い安定な状態になる。このように、磁性
人工格子膜間に働く静磁結合力によって、磁性人工格子
膜の単磁区化が可能となるのである。
That is, in the case of only the magnetic artificial lattice film having the laminated structure shown in FIG. 1 or FIG. 10, it is most static that the magnetic domain structure is a free-wheeling magnetic domain structure composed of a large number of magnetic domains as shown in FIG. It is in a stable state with low magnetic energy, and in this case, therefore, a return domain structure of multiple domains is formed instead of a single domain, but as shown in FIG. When a multilayer film sandwiching the film 9 is used, a magnetostatic coupling force works between the magnetic artificial lattice films 8 and, for example, in the magnetic artificial lattice film of the first layer from the surface, the magnetization direction is rightward in FIG. The layers are oriented leftward, the third layer is oriented rightward, the fourth layer is oriented leftward, and so on ... When facing, that is, in a single domain structure, the magnetostatic energy is the lowest and stable. It becomes a state. Thus, the magnetostatic coupling force acting between the magnetic artificial lattice films enables the magnetic artificial lattice film to have a single magnetic domain.

また、磁気ヘッド用磁性膜として、磁性人工格子膜の
み(第1図、第10図の膜構造)を使用した場合、磁区構
造は第4図に示すような多磁区の還流磁区構造となる。
媒体からの信号を効率良く再生できるという点で最も望
ましいのは、第4図の(a)、(b)、(c)のなかの
(b)の磁区構造である。
When only the magnetic artificial lattice film (the film structure shown in FIGS. 1 and 10) is used as the magnetic film for the magnetic head, the magnetic domain structure becomes a multi-domain return magnetic domain structure as shown in FIG.
What is most desirable in that the signal from the medium can be efficiently reproduced is the magnetic domain structure of (b) in (a), (b) and (c) of FIG.

一方、磁気ヘッド用磁性膜として、第11図に示したよ
うに磁性人工格子膜8と非磁性絶縁膜9との多層膜を使
用すると、上記した単磁区化によりさらに(つまり第4
図の(b)よりも一層)信号再生効率が向上する。信号
再生効率の高さに順をつけ、これらの関係を示すと、 [第4図(a)、(c)の磁区構造]<[第4図
(b)の磁区構造]<[第11図の構成による磁区構造] となる。
On the other hand, if a multi-layer film of the magnetic artificial lattice film 8 and the non-magnetic insulating film 9 is used as the magnetic film for the magnetic head as shown in FIG.
The signal reproduction efficiency is further improved). The order of high signal reproduction efficiency and the relationship between them are as follows: [Magnetic domain structure of FIGS. 4 (a) and (c)] <[Magnetic domain structure of FIG. 4 (b)] <[FIG. 11 Domain structure].

また、第11図の多層膜構成では、各磁性層が薄くなる
ので、渦電流損失が抑えられ、透磁率の周波数特性を改
善することができる。
Further, in the multilayer film structure of FIG. 11, since each magnetic layer becomes thin, eddy current loss can be suppressed and the frequency characteristic of magnetic permeability can be improved.

このように、本発明による〔Fe、Co、CoFe〕系磁性人
工膜は、磁歪定数λs零をもつ良好な軟磁気特性を実現
でき、同時に2テスラ以上の飽和磁束密度Bsを実現でき
る。またこれらの磁性人工格子膜は、FeをCo及び/又は
CoFeに対して挟んだ構成であるため、耐腐蝕性に富み、
また成膜温度が300℃においても、磁気特性が劣化しな
いことから、熱安定性にも優れている。
As described above, the [Fe, Co, CoFe] -based magnetic artificial film according to the present invention can realize good soft magnetic characteristics with a magnetostriction constant λs of zero, and at the same time, can realize a saturation magnetic flux density Bs of 2 Tesla or more. Further, these magnetic artificial lattice films contain Fe and Co and / or
Since it is sandwiched between CoFe, it has excellent corrosion resistance,
Further, even when the film forming temperature is 300 ° C., the magnetic characteristics do not deteriorate, and thus the thermal stability is excellent.

〔発明の効果〕〔The invention's effect〕

以上説明したように、本発明によるFe、Co、CoFe系磁
性人工格子膜は、その各膜厚を最適化することにより、
高飽和磁束密度Bsで保磁力Hcが小さく、同時に磁歪定数
λsが零である磁性膜を実現できるため、磁気ヘッド用
磁極材料として用いることにより、高保磁力媒体に高密
度信号を記録でき、またそれを効率良く再生することも
できるという利点がある。
As described above, the Fe, Co and CoFe magnetic artificial lattice films according to the present invention are optimized by optimizing the respective film thicknesses thereof.
Since a magnetic film having a high saturation magnetic flux density Bs, a small coercive force Hc, and a zero magnetostriction constant λs can be realized at the same time, a high density signal can be recorded in a high coercive force medium by using it as a magnetic pole material for a magnetic head. Has the advantage that it can also be efficiently reproduced.

また、基板上にFe層とCoFe層を交互に積層し、又は基
板上にFe層とCo層をCoFe層を介在して交互に積層した構
造であるため、耐腐蝕性に富み、熱安定性にも優れてい
ることから、信頼性の高い薄膜磁気ヘッド等の磁性部品
を歩留りよく製造できる利点がある。
In addition, the Fe layer and the CoFe layer are alternately laminated on the substrate, or the Fe layer and the Co layer are alternately laminated on the substrate with the CoFe layer interposed, so that it has excellent corrosion resistance and thermal stability. Since it is also excellent, there is an advantage that a magnetic component such as a highly reliable thin film magnetic head can be manufactured with high yield.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の一実施例のFe、Co、CoFe系人工格子膜
の概略を示す断面図、第2図は人工格子膜製作用の堆積
装置の説明図、第3図は磁歪定数λsの周期長依存性を
示す特性図、第4図(a)〜(c)は磁歪定数λsの符
号と磁区構造を示す説明図、第5図は磁歪定数λsのFe
層膜厚依存性を示す特性図、第6図は保磁力HcのFe層膜
厚依存性を示す特性図、第7図は飽和磁束密度BsのFe層
膜厚依存性を示す特性図、第8図は飽和磁束密度BsとCo
層膜厚比との関係を示す特性図、第9図は保磁力Hcと磁
歪定数λsのCo層膜厚依存性を示す特性図、第10図はFe
/CoFe人工格子膜の構成例(別の実施例)を示す断面
図、第11図は〔Fe、Co、CoFe〕系人工格子膜と非磁性絶
縁膜との多層膜の構成例(更に別の実施例)を示す断面
図である。 1……ターゲット支持台、2……基板、3……イオン
源、4……Co膜、5……CoFe膜、6……Fe膜、7……基
板、8……〔Fe、Co、CoFe〕系人工格子層、9……非磁
性絶縁層。
FIG. 1 is a sectional view showing the outline of an Fe, Co, CoFe artificial lattice film according to an embodiment of the present invention, FIG. 2 is an explanatory view of a deposition apparatus for producing an artificial lattice film, and FIG. 3 is a magnetostriction constant λs. 4 (a) to 4 (c) are explanatory diagrams showing the sign and the domain structure of the magnetostriction constant λs, and FIG. 5 is the Fe of the magnetostriction constant λs.
FIG. 6 is a characteristic diagram showing the layer thickness dependence of the coercive force Hc, and FIG. 7 is a characteristic diagram showing the Fe layer thickness dependence of the saturation magnetic flux density Bs. Figure 8 shows the saturation magnetic flux density Bs and Co
FIG. 9 is a characteristic diagram showing the relationship with the layer thickness ratio, FIG. 9 is a characteristic diagram showing the Co layer thickness dependency of coercive force Hc and magnetostriction constant λs, and FIG.
FIG. 11 is a cross-sectional view showing a structural example (another embodiment) of a / CoFe artificial lattice film, and FIG. 11 is a structural example of a multilayer film of a [Fe, Co, CoFe] -based artificial lattice film and a nonmagnetic insulating film (further another It is a sectional view showing (Example). 1 ... Target support, 2 ... Substrate, 3 ... Ion source, 4 ... Co film, 5 ... CoFe film, 6 ... Fe film, 7 ... Substrate, 8 ... [Fe, Co, CoFe ] System artificial lattice layer, 9 ... Non-magnetic insulating layer.

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】基板上にFe層とCoFe層を交互に積層し、又
は基板上にFe層とCo層をCoFe層を介在して交互に積層し
て成ることを特徴とする磁性人工格子膜。
1. A magnetic artificial lattice film characterized in that Fe layers and CoFe layers are alternately laminated on a substrate, or Fe layers and Co layers are alternately laminated on a substrate with a CoFe layer interposed. .
【請求項2】上記Fe層とCoFe層を交互に積層し、又はFe
層とCo層をCoFe層を介在して交互に積層してなる成る格
子膜が、非磁性絶縁膜により単磁区化されていることを
特徴とする特許請求の範囲第1項記載の磁性人工格子
膜。
2. Fe layers and CoFe layers are alternately laminated, or Fe layers are formed.
The magnetic artificial lattice according to claim 1, wherein a lattice film formed by alternately laminating layers and Co layers with a CoFe layer interposed is made into a single magnetic domain by a nonmagnetic insulating film. film.
JP62228635A 1987-09-14 1987-09-14 Magnetic artificial lattice film Expired - Fee Related JP2543374B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62228635A JP2543374B2 (en) 1987-09-14 1987-09-14 Magnetic artificial lattice film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62228635A JP2543374B2 (en) 1987-09-14 1987-09-14 Magnetic artificial lattice film

Publications (2)

Publication Number Publication Date
JPS6473603A JPS6473603A (en) 1989-03-17
JP2543374B2 true JP2543374B2 (en) 1996-10-16

Family

ID=16879430

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62228635A Expired - Fee Related JP2543374B2 (en) 1987-09-14 1987-09-14 Magnetic artificial lattice film

Country Status (1)

Country Link
JP (1) JP2543374B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7508626B2 (en) 2002-12-04 2009-03-24 Tdk Corporation Thin film magnetic head having magnetic pole with controlled dimensions

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2721540B2 (en) * 1989-03-27 1998-03-04 アルプス電気株式会社 Thin film magnetic head
US6795273B2 (en) * 2002-01-08 2004-09-21 Quantum Materials Design, Inc. Magnetic recording head with high saturation magnetization write pole having alternating interface-defining Fe/Co layers

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0727822B2 (en) * 1987-05-27 1995-03-29 株式会社日立製作所 Fe-Co magnetic multilayer film and magnetic head

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7508626B2 (en) 2002-12-04 2009-03-24 Tdk Corporation Thin film magnetic head having magnetic pole with controlled dimensions

Also Published As

Publication number Publication date
JPS6473603A (en) 1989-03-17

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