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JPH0715146B2 - Deposited film formation method - Google Patents
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JPH0715146B2 - Deposited film formation method - Google Patents

Deposited film formation method

Info

Publication number
JPH0715146B2
JPH0715146B2 JP62192729A JP19272987A JPH0715146B2 JP H0715146 B2 JPH0715146 B2 JP H0715146B2 JP 62192729 A JP62192729 A JP 62192729A JP 19272987 A JP19272987 A JP 19272987A JP H0715146 B2 JPH0715146 B2 JP H0715146B2
Authority
JP
Japan
Prior art keywords
deposited film
holding member
deposition surface
columnar body
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP62192729A
Other languages
Japanese (ja)
Other versions
JPS6439375A (en
Inventor
昌宏 奥田
誠一 宮沢
靖 谷口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP62192729A priority Critical patent/JPH0715146B2/en
Publication of JPS6439375A publication Critical patent/JPS6439375A/en
Publication of JPH0715146B2 publication Critical patent/JPH0715146B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は堆積膜形成方法に係り、特に柱状体に膜厚、膜
質が均一な堆積膜を堆積することの可能な堆積膜形成方
法に関する。
The present invention relates to a deposited film forming method, and more particularly to a deposited film forming method capable of depositing a deposited film having a uniform film thickness and film quality on a columnar body.

〔従来技術およびその問題点〕[Prior art and its problems]

従来、半導体レーザーの被堆積面に誘電体あるいは金属
の堆積膜を形成する場合、短冊形につながった半導体レ
ーザーとスペーサーとを交互に並べ、さらに左右から挾
みつける治具を用いてスパッタリング等の上方から飛来
する堆積膜のソースによって被堆積面に堆積膜を形成す
ることが成されていた。
Conventionally, when a dielectric or metal deposition film is formed on the deposition surface of a semiconductor laser, semiconductor lasers and spacers connected in strips are alternately arranged, and a jig for pinching from the left and right is used to perform sputtering or the like. The deposition film has been formed on the surface to be deposited by the source of the deposition film coming from the.

しかしながら、このような堆積膜形成方法において、真
空蒸着装置のように堆積膜のソースが半導体レーザーの
被堆積面より下側に配置される堆積膜形成装置には、第
6図に示すように、上記の左右から挾みつける治具16に
ネジ等をつけて、半導体レーザー14とスペーサー15とを
さらに強く挾む必要があり、着脱の作業性に問題があっ
た。
However, in such a deposited film forming method, as shown in FIG. 6, in the deposited film forming apparatus in which the source of the deposited film is arranged below the deposition surface of the semiconductor laser, as in the vacuum vapor deposition apparatus, as shown in FIG. It is necessary to attach a screw or the like to the jig 16 that is sandwiched from the left and right sides to further strongly sandwich the semiconductor laser 14 and the spacer 15 and there is a problem in workability of attachment and detachment.

また、さらにこの被堆積面と対向する裏面にも堆積膜を
形成する場合には、一度、スパッタリング装置等の膜形
成装置から上記治具16を取り出し、短冊状の半導体レー
ザーの上下を逆にして前と同様に治具16に固定した後、
堆積膜形成装置に入れて堆積を形成しており、短冊状の
半導体レーザー14を反転する場合、膜形成装置の真空状
態を破った後、さらに短冊状半導体レーザー14の上下を
逆にして再び整列し直すといった複雑な工程を有してい
るため、作業上、大きな障害となっていた。
Further, when forming a deposited film on the back surface facing the deposition surface, the jig 16 is once taken out from a film forming apparatus such as a sputtering apparatus, and the strip-shaped semiconductor laser is turned upside down. After fixing to the jig 16 as before,
If the strip-shaped semiconductor laser 14 is turned over when the deposition is formed in the deposited film forming apparatus and the vacuum state of the film forming apparatus is broken, the strip-shaped semiconductor laser 14 is turned upside down and realigned. Since it has a complicated process of reworking, it has been a major obstacle in the work.

さらに、治具16の構造上被堆積面と垂直なへき開した面
が治具に接触するようになっており、半導体レーザーの
構造上重要な面に傷をつけ易く、素子を劣化させる可能
性があった。
In addition, the surface of the jig 16 that is cleaved perpendicular to the deposition surface is in contact with the jig, and it is easy to damage the important surface of the structure of the semiconductor laser, which may deteriorate the device. there were.

また、スパッタリング装置のように形成膜のまわり込み
が大きな装置では、短冊状の半導体レーザーを寝かせ
て、並べた状態で成膜が行われているが、この方法では
対向する両面に反射率の異なる堆積膜を形成するために
は、レジスト塗布等、複雑な工程が必要であり、作業性
に問題があった。
Further, in a device such as a sputtering device in which the formed film is largely wrapped around, strip-shaped semiconductor lasers are laid down and film formation is performed in a lined state, but in this method, opposite surfaces have different reflectances. In order to form the deposited film, complicated steps such as resist coating are required, and there is a problem in workability.

本発明の目的は上記の問題点に鑑み、柱状体の被堆積面
に膜厚、膜質を均一な堆積膜を形成するとともに、その
作業性を改善し、柱状体の構成面と治具との接触部分を
へらして傷等を防ぐことのできる堆積膜形成方法を提供
することにある。
In view of the above problems, an object of the present invention is to form a deposited film having a uniform film thickness and film quality on a deposition surface of a columnar body, improve its workability, and improve the workability of the surface of the columnar body and a jig. It is an object of the present invention to provide a method for forming a deposited film which can prevent scratches and the like by scraping the contact portion.

〔問題点を解決するための手段〕[Means for solving problems]

本発明の堆積膜形成方法は、柱状体の被堆積面に堆積膜
形成粒子を飛来させて堆積膜を形成する方法において、
その上面に前記柱状体が被堆積面を下にして挿入される
複数の溝が並設され、その下面に前記溝に挿入された柱
状体の被堆積面の一部を露出させる凹部が設けられ、且
つ、前記凹部の底面が被堆積面より上方に位置するよう
に形成された板状の保持部材を用い、前記保持部材の複
数の溝に夫々柱状体を挿入した状態で、下方から堆積膜
形成粒子を飛来させ、凹部から露出した被堆積面の一部
に堆積膜を形成したことを特徴とする。
The deposited film forming method of the present invention is a method of forming a deposited film by causing deposited film forming particles to fly to a deposition surface of a columnar body,
A plurality of grooves into which the columnar bodies are inserted are placed side by side on the upper surface thereof, and a recess for exposing a part of the deposition surface of the columnar bodies inserted into the grooves is provided on the lower surface thereof. Using a plate-shaped holding member formed so that the bottom surface of the recess is located above the deposition surface, and the columnar bodies are inserted into the plurality of grooves of the holding member, the deposited film is formed from below. It is characterized in that formed particles are made to fly and a deposited film is formed on a part of the deposition surface exposed from the recess.

〔作用〕[Action]

本発明は、その上面に柱状体が被堆積面を下にして挿入
される複数の溝が並設され、その下面に前記溝に挿入さ
れた柱状体の被堆積面の一部を露出させる凹部が設けら
れ、且つ、前記凹部の底面が被堆積面より上方に位置す
るように形成された板状の保持部材を用い、前記保持部
材の複数の溝に夫々柱状体を挿入した状態で、下方から
堆積膜形成粒子を飛来させ、凹部から露出した被堆積面
の一部に堆積膜を形成するので、堆積膜形成粒子が保持
部材によって、遮られることなく被堆積面に到達し、被
堆積面に均一に堆積膜を形成することが可能となる。ま
た保持部材と柱状体との接触面積を減少させ、傷等の機
械的な破壊による不良を減少させることができる。
According to the present invention, a plurality of grooves into which a columnar body is inserted with the deposition surface facing down are arranged in parallel on the upper surface thereof, and a recess for exposing a part of the deposition surface of the columnar body inserted into the groove is formed on the lower surface thereof. And using a plate-shaped holding member formed so that the bottom surface of the recess is located above the deposition surface, the columnar body is inserted into the plurality of grooves of the holding member, and Since the deposited film forming particles fly from the surface and form the deposited film on a part of the deposited surface exposed from the concave portion, the deposited film forming particles reach the deposited surface without being blocked by the holding member, It is possible to uniformly form a deposited film. Further, it is possible to reduce the contact area between the holding member and the columnar body and reduce defects due to mechanical breakage such as scratches.

なお、上記堆積膜形成方法により、被堆積面へ堆積膜を
形成した後、更に前記保持部材に第2の保持部材を嵌合
させて裏返し、前記第2の保持部材で柱状体を前記保持
部材の溝から突出させた状態で保持し、前記第2の保持
部材に設けられた貫通穴を通して堆積膜形成粒子を飛来
させ、前記柱状体の被堆積面に対向した面に堆積膜を形
成すれば、堆積膜形成粒子の飛来方向に対する柱状体の
被堆積面の配置を、真空を保持したまま変えて、柱状体
の複数の被堆積面に均一な堆積膜を形成することができ
る。
After the deposited film is formed on the deposition surface by the above-described deposited film forming method, the holding member is further fitted with the second holding member and turned over, and the columnar body is held by the second holding member. If it is held in a state of being projected from the groove, the deposited film forming particles are made to fly through the through holes provided in the second holding member, and the deposited film is formed on the surface of the columnar body facing the deposition surface. It is possible to form a uniform deposited film on a plurality of deposition surfaces of the columnar body by changing the arrangement of the deposition surface of the columnar body with respect to the flying direction of the deposited film forming particles while maintaining the vacuum.

また、前記柱状体の両端部を保持部材によって保持する
ことにより前記柱状体を保持すれば、より柱状体に対す
る接触面積を減らし、保持部材による傷等の機械的な破
壊の可能性が減少する。
If the columnar body is held by holding both ends of the columnar body by the holding members, the contact area with the columnar body is further reduced and the possibility of mechanical damage such as scratches by the holding member is reduced.

さらに、複数の柱状体は、保持部材に形成された複数の
溝に夫々挿入されるので、各柱状体の間には保持部材が
存在することになり、被堆積面の側面の被堆積面の近傍
以外は保持部材で覆われており、その側面に堆積膜は形
成されない。加えて、本発明に用いる保持部材は、柱状
体を挿入する複数の溝と、被堆積面を露出させる為の凹
部を板状の部材に形成するだけでよい為、容易に作成す
ることができる。
Further, since the plurality of columnar bodies are respectively inserted into the plurality of grooves formed in the holding member, the holding member exists between the respective columnar bodies, and the deposition surface on the side surface of the deposition surface The portions other than the vicinity are covered with the holding member, and the deposited film is not formed on the side surface thereof. In addition, the holding member used in the present invention can be easily formed because it is only necessary to form a plurality of grooves into which the columnar bodies are inserted and the recesses for exposing the deposition surface on the plate-shaped member. .

〔実施例〕〔Example〕

以下、本発明の実施例を図面を用いて詳細に説明する。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

なお、柱状体は短冊状の半導体レーザーを一例として取
り上げるが、これに限定されるものではない。形状も四
角柱に限定されず、三角柱,五角柱,円柱等であっても
よい。
The columnar body is a strip-shaped semiconductor laser as an example, but the columnar body is not limited to this. The shape is not limited to the quadrangular prism, but may be a triangular prism, a pentagonal prism, a cylinder, or the like.

第1図(A)〜(C)は保持手段(保持部材となる)に
挿入された半導レーザーの状態を示す説明図である。
FIGS. 1 (A) to 1 (C) are explanatory views showing a state of a semiconductor laser inserted into a holding means (which serves as a holding member).

第2図は上記保持手段の斜視図である。FIG. 2 is a perspective view of the holding means.

第2図に示すように、保持手段1には列状に溝2が設け
られており、この溝2と直角に、裏面に凹部3が設けら
れている。保持手段1の材料としては、ガラスやアルミ
ナ等のセラミックの焼結体,ステンレスなどが用いられ
る。
As shown in FIG. 2, the holding means 1 is provided with grooves 2 in rows, and a recess 3 is provided on the back surface at a right angle to the grooves 2. As a material of the holding means 1, a sintered body of glass, a ceramic such as alumina, stainless steel, or the like is used.

所定の巾にへき開された短冊状の半導体レーザー4は、
第2図の保持手段1上に掘られた溝2に、膜付けが行な
われる面を下側にして挿入されて第1図のような状態と
なる。第1図(A),(B),(C)はそれぞれ、第2
図をA,B,C方向から見た状態を示す。短冊状の半導体レ
ーザー4の下側の面は、両端部のみが保持手段1に接し
ており、従来例のように、平板プレート上に面を下側に
して置く構造と異なり、へき開された面を傷つけるとい
った不都合は生じない。さらに、第1図(A)に示され
ているように凹部3は、半導体レーザー4の被堆積面が
突出するように深く掘られているため、例えば、電子ビ
ーム蒸着装置のように蒸発して飛来してくる物質の回り
込みが小さい装置を用いても、保持手段1によって被堆
積面上に影部が生じず、均一な堆積膜が面上に成膜され
る。
The strip-shaped semiconductor laser 4 cleaved to a predetermined width is
2 is inserted into the groove 2 dug on the holding means 1 shown in FIG. 2 with the surface on which the film is to be formed facing down. FIGS. 1 (A), (B), and (C) are respectively the second
The figure shows the state seen from the A, B, and C directions. Only the both ends of the lower surface of the strip-shaped semiconductor laser 4 are in contact with the holding means 1, and unlike the conventional example in which the surface is placed on the flat plate downward, the cleaved surface It does not cause any inconvenience such as damaging the. Further, as shown in FIG. 1 (A), since the concave portion 3 is deeply dug so that the deposition surface of the semiconductor laser 4 protrudes, the concave portion 3 evaporates like an electron beam vapor deposition apparatus, for example. Even if an apparatus in which the flying material is less entangled is used, the holding means 1 does not form a shadow on the deposition surface, and a uniform deposition film is formed on the surface.

なお、半導体レーザー4は、保持手段1に形成された複
数の溝2に夫々挿入されるので、各半導体レーザー4の
間には保持手段1が存在することになり、被堆積面の側
面の被堆積面の近傍以外は保持部材1で覆われており、
その側面に堆積膜は形成されない。保持手段1は、半導
体レーザー4を挿入する複数の溝2と、被堆積面を露出
させる為の凹部3を板状の部材に形成するだけでよい
為、容易に作成することができる。
Since the semiconductor laser 4 is inserted into each of the plurality of grooves 2 formed in the holding means 1, the holding means 1 exists between the semiconductor lasers 4, and the side surface of the deposition surface is covered. The parts other than the vicinity of the deposition surface are covered with the holding member 1,
No deposited film is formed on the side surface. The holding means 1 can be easily formed because it is only necessary to form the plurality of grooves 2 into which the semiconductor laser 4 is inserted and the recesses 3 for exposing the deposition surface in a plate-shaped member.

上記の保持手段を用いた堆積膜形成方法の一例として、
通常の電子ビーム蒸着装置を用いて誘電体膜を被着する
場合について述べる。上記第1図のように半導体レーザ
ー4が保持された保持手段1を、さらに、第3図のよう
に治具5によって蒸着装置にセッティングする。次に10
-5Torr以上に真空排気し、ヒーターによって治具5付近
の温度を200℃以上に加熱した後、SiO2,Al2O3などの誘
電体形成材料を、フィラメント7から出射した電子ビー
ムにより蒸着源6を加熱蒸発させ、シャッター8によっ
て膜厚を制御して蒸着を行う。
As an example of the deposited film forming method using the above holding means,
The case of depositing a dielectric film using a normal electron beam evaporation apparatus will be described. The holding means 1 holding the semiconductor laser 4 as shown in FIG. 1 is set in the vapor deposition apparatus by the jig 5 as shown in FIG. Then 10
-Vacuum exhaust to -5 Torr or more, heat the temperature around the jig 5 to 200 ° C or more with a heater, and then deposit a dielectric forming material such as SiO 2 or Al 2 O 3 with an electron beam emitted from the filament 7. The source 6 is heated and evaporated, and the shutter 8 controls the film thickness to perform vapor deposition.

以上の工程で、半導体レーザー4の一方の被堆積面に所
定の誘電体膜を形成することができる。
Through the above steps, a predetermined dielectric film can be formed on one deposition surface of the semiconductor laser 4.

上記被堆積面と対向する裏面に堆積膜を形成する場合に
も上述の方法を繰り返すことにより、誘電体膜を形成す
ることができる。なお、上述では、形成する堆積膜を誘
電体に限って説明したが、膜質は誘電体に限るものでは
なく、例えば、絶縁膜上の金属薄膜を形成する場合にも
有効である。また、膜の形成方法も電子ビーム蒸着に限
るものではなく、CVD(Chemical Vapor Deposition)法
あるいはプラズマCVD法あるいはスパッタリング法など
で膜のソースが短冊状の半導体レーザーの被堆積面より
下方に位置するものであれば同様の方法で、堆積膜を形
成することが可能である。
The dielectric film can be formed by repeating the above method even when the deposited film is formed on the back surface facing the deposition surface. In the above description, the deposited film to be formed is limited to the dielectric, but the film quality is not limited to the dielectric, and is also effective when forming a metal thin film on an insulating film, for example. The film formation method is not limited to electron beam evaporation, and the film source is located below the deposition surface of the strip-shaped semiconductor laser by a CVD (Chemical Vapor Deposition) method, a plasma CVD method, a sputtering method, or the like. Any material can be used to form the deposited film by the same method.

次に、本発明の他の実施例について説明する。Next, another embodiment of the present invention will be described.

本実施例の堆積膜形成方法は対向する両面に堆積膜形成
を行う場合に好適に用いられるものであり、短冊状の半
導体レーザーの保持手段に回転機構をもたせ、この回転
中に短冊状の半導体レーザーが落下しないような構造を
もち、かつ回転の前後とも被堆積面が隣接する保持手段
の底部よりも下方に突出するような保持手段を用いるこ
とにより、前述した堆積膜形成方法に用いられる一度真
空装置の真空を破り、治具を取出して半導体レーザーの
上下を反転させる作業を省き、作業性を改善するもので
ある。
The deposited film forming method of the present embodiment is preferably used when the deposited films are formed on both surfaces facing each other, and the strip-shaped semiconductor laser holding means is provided with a rotating mechanism, and the strip-shaped semiconductor laser is provided during this rotation. By using a holding means having a structure in which the laser does not drop and the deposition surface projects below the bottom of the adjacent holding means both before and after the rotation, the once used in the method for forming a deposited film described above. The workability is improved by eliminating the work of breaking the vacuum of the vacuum device, taking out the jig, and turning the semiconductor laser upside down.

第4図及び第5図は、上述の機能を果たす半導体レーザ
ーの保持手段の構造を示した構成図であり、それぞれ
(A)は回転の前、(B)は180°回転の後の半導体レ
ーザー4と、その保持手段9及び保持手段(第2の保持
部材となる)10の状態を示した構成図である。
FIG. 4 and FIG. 5 are configuration diagrams showing the structure of the holding means of the semiconductor laser which performs the above-mentioned functions, (A) before rotation and (B) after 180 ° rotation, respectively. 4 is a configuration diagram showing the states of the holding means 9, and holding means 9 and holding means (which serves as a second holding member) 10.

第4図及び第5図に示すように、保持手段9は前実施例
の保持手段1とほぼ同一の構造であるが、保持手段9に
は嵌合ヅメ11が設けられている。また同様に保持手段に
も嵌合ヅメ12が設けられている。
As shown in FIGS. 4 and 5, the holding means 9 has substantially the same structure as the holding means 1 of the previous embodiment, but the holding means 9 is provided with a fitting claw 11. Similarly, the retaining means is also provided with a fitting claw 12.

嵌合ヅメ11,12は、保持手段9と保持手段10との相対的
位置がずれないようにするために配設されるものであ
る。保持手段10には、保持手段9の半導体レーザー4の
被堆積面が露出する部分に対応するように穴13があけら
れており、保持手段全体が180°回転した時、第4図
(B)のようにその穴13の周辺部分に半導体レーザー4
の端部が接触して半導体レーザー4が下へ落ちないよう
な構造になっている。
The fitting claws 11 and 12 are provided so that the relative positions of the holding means 9 and the holding means 10 do not shift. A hole 13 is formed in the holding means 10 so as to correspond to a portion of the holding means 9 where the deposition surface of the semiconductor laser 4 is exposed, and when the whole holding means is rotated by 180 °, FIG. Like the semiconductor laser 4 around the hole 13
The semiconductor laser 4 does not drop downward due to the contact of the ends of the.

この保持手段を用いて半導体レーザー4の被堆積面に堆
積膜を形成する方法は、前述した実施例と同様であり、
第4図(A),第4図(B)に示す回転前の状態及び第
4図(B),第5図(B)に示す180°回転後の状態の
時に半導体レーザー4の被堆積面付近に堆積膜の構成物
質の飛来を妨げるものがなく均一な堆積膜が被堆積面に
生成できる。
The method of forming a deposited film on the deposition surface of the semiconductor laser 4 using this holding means is the same as in the above-mentioned embodiment,
The deposition surface of the semiconductor laser 4 in the state before rotation shown in FIGS. 4 (A) and 4 (B) and the state after 180 ° rotation shown in FIGS. 4 (B) and 5 (B). A uniform deposited film can be formed on the deposition target surface without any obstacle in the vicinity to prevent the constituent substances of the deposited film from flying in.

なお、保持手段9及び保持手段10を回転させる方法は、
真空装置内又は外部に設けられた不図示のモーター或は
手動により行なう。
The method of rotating the holding means 9 and the holding means 10 is
It is performed by a motor (not shown) provided inside or outside the vacuum device or manually.

〔発明の効果〕〔The invention's effect〕

以上、詳細に説明したように、本発明の堆積膜形成方法
によれば、その上面に柱状体が被堆積面を下にして挿入
される複数の溝が並設され、その下面に前記溝に挿入さ
れた柱状体の被堆積面の一部を露出させる凹部が設けら
れ、且つ、前記凹部の底面が被堆積面より上方に位置す
るように形成された板状の保持部材を用い、前記保持部
材の複数の溝に夫々柱状体を挿入した状態で、下方から
堆積膜形成粒子を飛来させ、凹部から露出した被堆積面
の一部に堆積膜を形成するので、堆積膜形成粒子が保持
部材によって、遮られることなく被堆積面に到達し、被
堆積面に均一に堆積膜を形成することが可能となる。ま
た保持部材と柱状体との接触面積を減少させ、傷等の機
械的な破壊を減少させることができる。
As described above in detail, according to the deposited film forming method of the present invention, a plurality of grooves into which the columnar body is inserted with the deposition surface facing down are arranged in parallel on the upper surface, and the grooves are formed on the lower surface. Using a plate-shaped holding member that is provided with a recess that exposes a part of the deposited surface of the inserted columnar body, and the bottom surface of the recess is located above the deposited surface, With the columnar bodies inserted in the plurality of grooves of the member, the deposited film forming particles are blown from below to form the deposited film on a part of the deposition surface exposed from the recess, so that the deposited film forming particles are retained by the holding member. As a result, it is possible to reach the surface to be deposited without being blocked and to form a deposited film uniformly on the surface to be deposited. Further, the contact area between the holding member and the columnar body can be reduced, and mechanical damage such as scratches can be reduced.

なお、被堆積面への堆積膜の形成の後、更に前記保持部
材に第2の保持部材を嵌合させて裏返し、前記第2の保
持部材で柱状体を前記保持部材の溝から突出させた状態
で保持し、前記第2の保持部材に設けられた貫通穴を通
して堆積膜形成粒子を飛来させ、前記柱状体の被堆積面
に対向した面に堆積膜を形成すれば、片側の膜形成を行
った後に、真空を破ることなく続いてもう片側の膜形成
が行なえるため、工程の単純化,省力化に大いに効果が
あり、かつ柱状体の上下を反転して保持部材に固定する
作業を省くことができるので、この際の被堆積面及び被
堆積面以外の面へ傷をつけたり、汚染物が付着したりす
ることがなくなる。
After forming the deposited film on the deposition surface, the second holding member was further fitted to the holding member and turned upside down, and the columnar body was projected from the groove of the holding member by the second holding member. In this state, the deposited film forming particles are made to fly through the through holes provided in the second holding member, and the deposited film is formed on the surface of the columnar body facing the deposition surface. After performing, the film on the other side can be continuously formed without breaking the vacuum, which is very effective in simplifying the process and saving labor, and the work of reversing the top and bottom of the columnar body and fixing it to the holding member is possible. Since it can be omitted, the deposition surface and the surface other than the deposition surface at this time are not scratched and contaminants are not attached.

また、前記柱状体の両端部を保持部材によって保持する
ことにより前記柱状体を保持すれば、より柱状体に対す
る接触面積を減らし、保持部材による傷等の機械的な破
壊の可能性が減少する。
If the columnar body is held by holding both ends of the columnar body by the holding members, the contact area with the columnar body is further reduced and the possibility of mechanical damage such as scratches by the holding member is reduced.

さらに、複数の柱状体は、保持部材に形成された複数の
溝に夫々挿入されるので、各柱状体の間には保持部材が
存在することになり、被堆積面の側面の被堆積面の近傍
以外は保持部材で覆われており、その側面に堆積膜は形
成されない。加えて、本発明に用いる保持部材は、柱状
体を挿入する複数の溝と、被堆積面を露出させる為の凹
部を板状の部材に形成するだけでよい為、容易に作成す
ることができる。
Further, since the plurality of columnar bodies are respectively inserted into the plurality of grooves formed in the holding member, the holding member exists between the respective columnar bodies, and the deposition surface on the side surface of the deposition surface The portions other than the vicinity are covered with the holding member, and the deposited film is not formed on the side surface thereof. In addition, the holding member used in the present invention can be easily formed because it is only necessary to form a plurality of grooves into which the columnar bodies are inserted and the recesses for exposing the deposition surface on the plate-shaped member. .

本発明は柱状体の傷が特性に大きな影響を与える半導体
レーザー等に好適に用いられ、その性能,信頼性を向上
させることができる。
INDUSTRIAL APPLICABILITY The present invention is suitably used for a semiconductor laser or the like in which the damage of the columnar body greatly affects the characteristics, and can improve the performance and reliability thereof.

【図面の簡単な説明】[Brief description of drawings]

第1図(A)〜(C)は保持手段に挿入された半導レー
ザーの状態を示す説明図である。 第2図は上記保持手段の斜視図である。 第3図は本発明による電子ビーム蒸着装置の構成を示す
概略図である。 第4図及び第5図は、上述の機能を果たす半導体レーザ
ーの保持手段の構造を示した構成図である。 第6図は、従来の堆積膜形成方法を示す概略的説明図で
ある。 1,9,10……保持手段、2……溝、3……凹部、4……半
導体レーザー、11,12……嵌合ヅメ、13……穴。
1 (A) to 1 (C) are explanatory views showing the state of the semiconductor laser inserted in the holding means. FIG. 2 is a perspective view of the holding means. FIG. 3 is a schematic diagram showing the structure of an electron beam vapor deposition apparatus according to the present invention. FIG. 4 and FIG. 5 are configuration diagrams showing the structure of the holding means of the semiconductor laser which fulfills the above-mentioned functions. FIG. 6 is a schematic explanatory view showing a conventional deposited film forming method. 1,9,10 …… Holding means, 2 …… Groove, 3 …… Concave, 4 …… Semiconductor laser, 11,12 …… Mating claw, 13 …… Hole.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】柱状体の被堆積面に堆積膜形成粒子を飛来
させて堆積膜を形成する方法において、その上面に前記
柱状体が被堆積面を下にして挿入される複数の溝が並設
され、その下面に前記溝に挿入された柱状体の被堆積面
の一部を露出させる凹部が設けられ、且つ、前記凹部の
底面が被堆積面より上方に位置するように形成された板
状の保持部材を用い、前記保持部材の複数の溝に夫々柱
状体を挿入した状態で、下方から堆積膜形成粒子を飛来
させ、凹部から露出した被堆積面の一部に堆積膜を形成
したことを特徴とする堆積膜形成方法。
1. A method of forming a deposited film by causing deposited film forming particles to fly to a deposition surface of a columnar body, wherein a plurality of grooves into which the columnar body is inserted with the deposition surface facing down are aligned. A plate provided on the lower surface thereof to expose a part of the deposition surface of the columnar body inserted in the groove, and the bottom surface of the recess is located above the deposition surface. Using a cylindrical holding member, with the columnar bodies inserted in the plurality of grooves of the holding member, the deposited film forming particles were blown from below to form a deposited film on a part of the deposition surface exposed from the recess. A method for forming a deposited film, comprising:
【請求項2】被堆積面への堆積膜の形成の後、更に前記
保持部材に第2の保持部材を嵌合させて裏返し、前記第
2の保持部材で柱状体を前記保持部材の溝から突出させ
た状態で保持し、前記第2の保持部材に設けられた貫通
穴を通して堆積膜形成粒子を飛来させ、前記柱状体の被
堆積面に対向した面に堆積膜を形成した特許請求の範囲
第1項記載の堆積膜形成方法。
2. After forming a deposited film on a deposition surface, a second holding member is further fitted to the holding member and turned over, and the columnar body is removed from the groove of the holding member by the second holding member. A method of holding a projecting state, causing deposited film forming particles to fly through a through hole provided in the second holding member, and forming a deposited film on a surface of the columnar body facing a deposition surface. The method for forming a deposited film according to item 1.
JP62192729A 1987-08-03 1987-08-03 Deposited film formation method Expired - Fee Related JPH0715146B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62192729A JPH0715146B2 (en) 1987-08-03 1987-08-03 Deposited film formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62192729A JPH0715146B2 (en) 1987-08-03 1987-08-03 Deposited film formation method

Publications (2)

Publication Number Publication Date
JPS6439375A JPS6439375A (en) 1989-02-09
JPH0715146B2 true JPH0715146B2 (en) 1995-02-22

Family

ID=16296094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62192729A Expired - Fee Related JPH0715146B2 (en) 1987-08-03 1987-08-03 Deposited film formation method

Country Status (1)

Country Link
JP (1) JPH0715146B2 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60110464U (en) * 1983-12-28 1985-07-26 ホ−ヤ株式会社 Board storage device

Also Published As

Publication number Publication date
JPS6439375A (en) 1989-02-09

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