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JPH0719892B2 - Method for sealing semiconductor light receiving device - Google Patents
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JPH0719892B2 - Method for sealing semiconductor light receiving device - Google Patents

Method for sealing semiconductor light receiving device

Info

Publication number
JPH0719892B2
JPH0719892B2 JP61162952A JP16295286A JPH0719892B2 JP H0719892 B2 JPH0719892 B2 JP H0719892B2 JP 61162952 A JP61162952 A JP 61162952A JP 16295286 A JP16295286 A JP 16295286A JP H0719892 B2 JPH0719892 B2 JP H0719892B2
Authority
JP
Japan
Prior art keywords
light receiving
resin
semiconductor light
sealing
receiving device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP61162952A
Other languages
Japanese (ja)
Other versions
JPS6319879A (en
Inventor
安照 市田
徹夫 吉沢
俊明 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP61162952A priority Critical patent/JPH0719892B2/en
Publication of JPS6319879A publication Critical patent/JPS6319879A/en
Publication of JPH0719892B2 publication Critical patent/JPH0719892B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/50Encapsulations or containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Light Receiving Elements (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は半導体受光装置の封止方法に係り、特に半導体
受光素子を有し、樹脂封止により封止が行われる半導体
受光装置の封止方法に関する。
The present invention relates to a method for sealing a semiconductor light receiving device, and more particularly to a semiconductor light receiving device having a semiconductor light receiving element, which is sealed by resin sealing. Regarding the method.

[従来技術] 半導体受光装置の封止方法の一つに、半導体受光素子等
を光透過性樹脂によって封止する、いわゆるクリアモー
ルドパッケージがある。
[Prior Art] One of sealing methods for a semiconductor light receiving device is a so-called clear mold package in which a semiconductor light receiving element or the like is sealed with a light-transmitting resin.

第7図はクリアモールドパッケージによって封止を行っ
た半導体受光装置の一例を示す断面図である。
FIG. 7 is a cross-sectional view showing an example of a semiconductor light receiving device sealed by a clear mold package.

同図において、1は封止体たる光透過性樹脂、2は半導
体受光素子たる半導体チップ、3a,3b,3cはリードフレー
ム、4は半導体チップ2とリードフレーム3a,3cとを接
続させるボンディングワイヤである。
In the figure, 1 is a light-transmitting resin which is a sealing body, 2 is a semiconductor chip which is a semiconductor light receiving element, 3a, 3b and 3c are lead frames, and 4 is a bonding wire which connects the semiconductor chip 2 and the lead frames 3a and 3c. Is.

[発明が解決しようとする問題点] 上記半導体受光装置は一度に多数の素子を樹脂モールド
することができることから、量産性に優れ、コスト低減
ができ、且つ小型化ができる等の利点を有するが、以下
に示すような問題点を有していた。
[Problems to be Solved by the Invention] The semiconductor light receiving device has advantages such as excellent mass productivity, cost reduction, and size reduction, since many elements can be resin-molded at one time. However, it had the following problems.

(1)半導体チップ2と光透過性樹脂1との膨張係数の
違いにより応力が発生し、特性を変動させるとともに、
極端な場合半導体チップ2の割れあるいは配線の変形を
引き起こす。
(1) Stress is generated due to the difference in expansion coefficient between the semiconductor chip 2 and the light-transmissive resin 1 to change the characteristics, and
In an extreme case, the semiconductor chip 2 may be cracked or the wiring may be deformed.

(2)光透過性樹脂表面のキズ,表面及び内面に存在す
る異物が入射してくる光を遮光又は乱反射させ、半導体
受光装置の特性を劣化させる。
(2) Defects on the surface of the light-transmissive resin, and foreign light existing on the surface and the inner surface of the light-transmitting resin is blocked or diffusely reflected to deteriorate the characteristics of the semiconductor light receiving device.

(3)光透過性樹脂と外気との界面での光の反射が半導
体受光素子の特性に影響を及ぼす。入射光は反射により
減じられ、また半導体チップ表面で反射した光は、光透
過性樹脂と外気との界面で再び反射され、半導体受光素
子の出力特性を変動させる。
(3) Reflection of light at the interface between the light transmissive resin and the outside air affects the characteristics of the semiconductor light receiving element. Incident light is reduced by reflection, and light reflected on the surface of the semiconductor chip is reflected again at the interface between the light transmissive resin and the outside air, which changes the output characteristics of the semiconductor light receiving element.

(4)透過性樹脂の分光特性が半導体受光装置全体の分
光感度特性に影響を与える。例えば、紫外線は樹脂によ
って遮蔽され、紫外線センサとしてクリアモールドパッ
ケージを用いることは難しい。
(4) The spectral characteristic of the transparent resin affects the spectral sensitivity characteristic of the entire semiconductor light receiving device. For example, ultraviolet rays are blocked by a resin, and it is difficult to use a clear mold package as an ultraviolet ray sensor.

(5)クリアモールドパッケージは全体が透明であり、
ボンディングワイヤからの反射光等の周囲からの光の回
り込みの影響を受けやすい。
(5) The entire clear mold package is transparent,
It is easily affected by the surrounding light such as reflected light from the bonding wire.

以上の問題点の中で、特に(2),(3),(5)は自
動焦点機構のように高感度,高精度な半導体受光素子が
要求される用途では大きな障害となっていた。
Among the above problems, particularly (2), (3), and (5) have been great obstacles in applications such as an autofocus mechanism that requires a highly sensitive and highly accurate semiconductor light receiving element.

本発明の目的は、上記問題点に鑑み、歩留りを向上さ
せ、低コストで、高精度,高感度、且つ信頼性の高い半
導体受光装置の作製において好適に用いられる封止方法
を提供することにある。
In view of the above-mentioned problems, an object of the present invention is to provide a sealing method which is used in manufacturing a semiconductor light-receiving device with improved yield, low cost, high accuracy, high sensitivity, and high reliability. is there.

[問題点を解決するための手段] 上記の目的は、半導体受光素子を有し、樹脂封止により
封止が行われる半導体受光装置の封止方法において、 少なくとも前記半導体受光素子の受光領域上の封止体の
厚さを薄くし、後工程でこの薄い封止体部分を除去する
ことを特徴とする本発明の半導体受光装置の封止方法に
よって達成される。
[Means for Solving Problems] In the method for sealing a semiconductor light receiving device which has a semiconductor light receiving element and is sealed by resin sealing, at least the light receiving region of the semiconductor light receiving element is provided. This is achieved by the method for sealing a semiconductor light receiving device of the present invention, which is characterized in that the thickness of the sealing body is reduced and the thin sealing body portion is removed in a later step.

[作用] 本発明によれば、少なくとも半導体受光素子の受光領域
上の封止体の厚さを薄くし、後工程でこの薄い封止体部
分を除去することにより、封止体部分の除去以前の工程
での、半導体受光素子の劣化を防ぎ、キズ,ゴミ等の異
物の付着等を防ぐことができ、さらに他の部分の樹脂の
厚さを損なうことなく薄い封止体部分を除去することが
できるので、高精度に封止体の中空領域を形成すること
ができ、また封止工程は厚さの薄い封止体部分の除去工
程が増えるのみであり従来の封止工程を大幅に変更する
ことなく封止を行うことができる。
[Operation] According to the present invention, at least the thickness of the sealing body on the light receiving region of the semiconductor light receiving element is reduced, and the thin sealing body portion is removed in a later step, so that the sealing body portion is not removed. In this process, it is possible to prevent the deterioration of the semiconductor light receiving element, prevent the adhesion of foreign matter such as scratches and dust, and remove the thin encapsulant part without impairing the resin thickness of other parts. Since it is possible to form the hollow area of the sealing body with high accuracy, the sealing step only changes the removal step of the thin sealing body part, and the conventional sealing step is significantly changed. It is possible to perform the sealing without doing so.

[実施例] 以下、本発明の実施例を図面を用いて詳細に説明する。EXAMPLES Examples of the present invention will be described below in detail with reference to the drawings.

第1図は本発明により封止された半導体受光装置の一実
施例を示す断面図である。なお、第7図と同一部材につ
いては、同一番号を付し説明を略す。
FIG. 1 is a sectional view showing an embodiment of a semiconductor light receiving device sealed by the present invention. The same members as those in FIG. 7 are designated by the same reference numerals and the description thereof is omitted.

同図において、5は中空領域、6は半導体受光素子たる
半導体チップ2上の受光領域、7は光透過性部材、10は
封止体たる樹脂である。なお、樹脂10は後述するよう
に、第7図に示したような光透過性樹脂である必要はな
く、光透過性を有しない樹脂でよい。
In the figure, 5 is a hollow region, 6 is a light receiving region on the semiconductor chip 2 which is a semiconductor light receiving element, 7 is a light transmissive member, and 10 is a resin which is a sealing body. As will be described later, the resin 10 does not have to be a light transmissive resin as shown in FIG. 7, and may be a resin having no light transmissive property.

この半導体受光装置の特徴は半導体受光素子の受光領域
6及びその近傍上に樹脂がなく中空領域となっているこ
とである。
A feature of this semiconductor light receiving device is that there is no resin on the light receiving region 6 of the semiconductor light receiving element and its vicinity, and it is a hollow region.

すなわち上記半導体受光装置は、中空領域5が設けら
れ、半導体チップ2と樹脂10との接触面積が少なくなる
ことから応力が軽減され(問題点(1)の軽減)、樹脂
10の一部が除去されて入射光の経路が中空領域となるの
で、樹脂表面のキズ,樹脂表面及び内部のゴミ等の異
物、樹脂の分光透過特性を考慮する必要がなくなり、ま
た入射光の経路が設けられるので必ずしも光透過性の樹
脂を用いなくてもよく、その結果光の反射等による周囲
からの光の回り込みを考慮する必要がなくなり(問題点
(2),問題点(4),問題点(5)の解決)、半導体
チップ2上の受光領域6と樹脂10との界面がなくなるの
で界面による反射光を考慮する必要がなくなる(問題点
(3)の解決)等のことから、製造工程上の歩留りを向
上させ、取り扱いを簡易にすることができ、且つ高感
度,高精度,高信頼性である利点を有している。
That is, in the semiconductor light receiving device, the hollow region 5 is provided, and the contact area between the semiconductor chip 2 and the resin 10 is reduced, so that the stress is reduced (the problem (1) is reduced) and the resin is reduced.
Since part of 10 is removed and the path of incident light becomes a hollow region, it is not necessary to consider scratches on the resin surface, foreign matter such as dust on the resin surface and inside, and the spectral transmission characteristics of the resin. Since the path is provided, it is not always necessary to use a light-transmissive resin, and as a result, it is not necessary to consider the wraparound of light from the surroundings due to light reflection or the like (problem (2), problem (4), Since the interface between the light receiving region 6 on the semiconductor chip 2 and the resin 10 is eliminated (the problem (5) is solved), it is not necessary to consider the reflected light from the interface (the solution to the problem (3)). It has the advantages of improved yield in the manufacturing process, simplified handling, and high sensitivity, high accuracy, and high reliability.

一般的に半導体素子はアルミニウムを主体とした物質に
より配線されることが多く、従ってボンディングワイヤ
が接続される半導体素子上のパッド部もアルミニウムで
構成されることが多い。この場合マイグレーション,絶
縁性等から一般的に耐湿性が問題となり、樹脂等で封止
されていることが望ましい。
In general, a semiconductor element is often wired by a substance mainly containing aluminum, and therefore a pad portion on the semiconductor element to which a bonding wire is connected is also often made of aluminum. In this case, moisture resistance generally becomes a problem due to migration, insulation and the like, and it is desirable that the resin is sealed with a resin or the like.

上記半導体受光装置においては、第1図に示すように、
前記パッド部等の配線部は樹脂で封止されているので前
記の耐湿性等の問題は軽減される。受光領域6及びその
近傍上においては、樹脂が除去されているために、耐湿
性等の信頼性の問題が起こる心配があるが、半導体受光
装置の分光特性に応じた分光透過率を有する光透過性部
材を中空領域5を覆うように樹脂10に固着し、外気と遮
断することによって解決される。さらに半導体受光素子
をシリコンナイトライドのようなパッシベーション膜を
被覆することによって、素子自体を高信頼性化すれば、
本発明によるパッケージ構造を用いても半導体受光装置
としての信頼性を失うことはない。
In the above semiconductor light receiving device, as shown in FIG.
Since the wiring portion such as the pad portion is sealed with the resin, the problems such as the moisture resistance are alleviated. Since the resin is removed from the light receiving region 6 and its vicinity, there is a concern that reliability problems such as moisture resistance may occur. However, light transmission having a spectral transmittance according to the spectral characteristics of the semiconductor light receiving device may occur. The problem is solved by fixing the elastic member to the resin 10 so as to cover the hollow region 5 and blocking it from the outside air. Further, if the semiconductor light receiving element is coated with a passivation film such as silicon nitride to make the element itself highly reliable,
Even if the package structure according to the present invention is used, reliability as a semiconductor light receiving device is not lost.

上記実施例において、半導体受光素子はIC化されて、他
の信号処理回路と共に一チップ上に搭載されたものであ
ってもよい。
In the above embodiments, the semiconductor light receiving element may be integrated into an IC and mounted on one chip together with other signal processing circuits.

なお、樹脂封止の方法としては、あらかじめ中空のプラ
スチックパッケージを準備しておき、それに半導体受光
素子等を挿入して固定し、その後に配線を行い、最後に
光透過性部材で蓋をする樹脂封止方法があるが、上記半
導体受光装置は、この封止方法とは異り、種々の利点を
有しており、例えばパッド部等の配線部は樹脂で封止さ
れていることから、この部分の信頼性が保たれる利点を
有する。
As a method of resin sealing, a hollow plastic package is prepared in advance, a semiconductor light receiving element or the like is inserted and fixed therein, wiring is performed thereafter, and finally, a resin is covered with a light transmissive member. Although there is a sealing method, the semiconductor light receiving device has various advantages unlike this sealing method. For example, since the wiring portion such as the pad portion is sealed with resin, This has the advantage that the reliability of the part is maintained.

以下、本発明の半導体受光装置の封止方法について、説
明する。
Hereinafter, the method for sealing the semiconductor light receiving device of the present invention will be described.

第2図〜第6図は本発明の半導体受光装置の封止方法を
説明するための工程図である。なお、第1図及び第7図
に示した構成部材と同一部材については、同一番号を付
し説明を略す。
2 to 6 are process drawings for explaining the method for sealing the semiconductor light receiving device of the present invention. The same members as those shown in FIGS. 1 and 7 are designated by the same reference numerals and the description thereof is omitted.

まず、第2図に示すように、リードフレーム3b上に半導
体受光素子たる半導体チップ2をAgペースト等の導電接
着材8によって接着固定する。
First, as shown in FIG. 2, the semiconductor chip 2, which is a semiconductor light receiving element, is bonded and fixed onto the lead frame 3b by a conductive adhesive material 8 such as Ag paste.

次に、第3図に示すように、細いボンディングワイヤ4
をボンディングすることによって半導体チップ2上のパ
ッド部とリードフレーム3a,3cとを接続する。
Next, as shown in FIG. 3, a thin bonding wire 4
Is bonded to connect the pad portions on the semiconductor chip 2 to the lead frames 3a and 3c.

次に、第4図に示すように、樹脂封止を行う。このと
き、例えば金型の形状を変えることにより、少なくとも
受光領域6及びその近傍の樹脂10を後工程で除去できる
ように厚さを制御して、薄い樹脂部分9を形成する。こ
の薄い樹脂部分9の厚さは金型を用い、半導体受光素子
たる半導体チップ2の厚さの変動を考慮することによ
り、制御が可能である。
Next, as shown in FIG. 4, resin sealing is performed. At this time, for example, by changing the shape of the mold, the thickness is controlled so that at least the resin 10 in the light receiving region 6 and its vicinity can be removed in a later step, and the thin resin portion 9 is formed. The thickness of the thin resin portion 9 can be controlled by using a mold and taking into consideration the variation in the thickness of the semiconductor chip 2 which is a semiconductor light receiving element.

例えば、半導体チップ2の厚さの変動を±25μmと仮定
し、薄い樹脂部分9の厚さの最小値を20μmに設定する
と、金型の設計により20μm〜70μmの厚さの樹脂を受
光領域及びその近傍に残すことが可能である。本発明の
半導体受光素子の封止方法の特徴部分は上記した受光領
域及びその近傍の薄い樹脂部分を後の工程で除去するこ
とによって、中空領域を形成することにあるが、この封
止方法は次の利点を有する。
For example, assuming that the variation of the thickness of the semiconductor chip 2 is ± 25 μm and the minimum value of the thickness of the thin resin portion 9 is set to 20 μm, the resin having a thickness of 20 μm to 70 μm is used as a light receiving area and It is possible to leave it in the vicinity. A characteristic part of the method for sealing a semiconductor light receiving element of the present invention is to form a hollow region by removing the above-described light receiving region and a thin resin portion in the vicinity thereof in a later step. It has the following advantages:

(1)封止の際、金型が直接半導体チップに接触し、半
導体チップを破壊することを防ぐことができる。
(1) It is possible to prevent the die from directly contacting the semiconductor chip during the sealing and breaking the semiconductor chip.

(2)受光領域及びその近傍の樹脂が後に除去されるま
での間、保護膜として半導体チップを保護する。
(2) The semiconductor chip is protected as a protective film until the resin in the light receiving region and its vicinity is removed later.

次に、第5図に示すように、樹脂封止の終了後、バリ取
り,メッキ,リードのカット・フォームを行う。これら
の工程は従来の工程と同一である。
Next, as shown in FIG. 5, after the resin sealing is completed, deburring, plating, and lead cutting are performed. These steps are the same as the conventional steps.

次に、第6図に示すように、受光領域6及びその近傍の
樹脂を除去する。
Next, as shown in FIG. 6, the resin in the light receiving region 6 and its vicinity is removed.

樹脂除去においては、リードフレームに腐食等の影響を
与えないこと及び露出する半導体受光素子たる半導体チ
ップに全く影響を与えないことが要求される。かかる条
件を満足する樹脂除去方法の一つに、樹脂を溶解によっ
て除去する方法がある。例えば封止樹脂が酸無水物硬化
のグリシジルエーテル型の樹脂である場合、ジエチレン
グリコール(HOCH2CH22Oを主体とする溶液によって溶
解することが可能である。水酸化カリウム(KOH)を溶
解したジエチレングリコール(HOCH2CH22Oは水分の混
入による加水分解によって水酸化カリウムを遊離するこ
とさえなければ、リードフレームを腐食することはな
い。また半導体受光素子が例えばシリコンナイトライド
等によってパッシベーションされていれば、溶液によっ
て素子に影響を与える可能性は少ない。
In the resin removal, it is required that the lead frame is not affected by corrosion or the like, and that the exposed semiconductor light receiving element, the semiconductor chip, is not affected at all. One of the resin removing methods that satisfies such conditions is a method of removing the resin by dissolution. For example, when the sealing resin is an acid anhydride-cured glycidyl ether type resin, it can be dissolved by a solution mainly containing diethylene glycol (HOCH 2 CH 2 ) 2 O. Diethylene glycol (HOCH 2 CH 2 ) 2 O in which potassium hydroxide (KOH) is dissolved does not corrode the lead frame as long as potassium hydroxide is not liberated by hydrolysis due to the inclusion of water. If the semiconductor light receiving element is passivated with, for example, silicon nitride, the possibility that the solution will affect the element is low.

受光領域及びその近傍上の樹脂は他の部分に比べて著し
く薄いので、他の部分の樹脂の厚さを損なうことなく薄
い部分の樹脂を溶解することは容易である。
Since the resin on the light receiving area and its vicinity is remarkably thinner than the other portions, it is easy to dissolve the resin in the thin portions without impairing the thickness of the resin in the other portions.

最後に、光透過性部材を接着し、第1図に示したプラス
チィックパッケージを作製する。
Finally, the light transmissive member is adhered to produce the plastic package shown in FIG.

上記のように、本発明の半導体受光装置の封止方法は、
樹脂を溶かす工程を追加するのみで封止を行うことがで
き、それ以外の従来の工程を変えることはない。
As described above, the method for sealing the semiconductor light receiving device of the present invention,
The sealing can be performed only by adding the step of melting the resin, and the other conventional steps are not changed.

[発明の効果] 以上詳細に説明したように、本発明の半導体受光装置の
製造方法によれば、少なくとも半導体受光素子の受光領
域上の封止体の厚さを薄くし、後工程でこの薄い封止体
部分を除去することにより、封止体部分の除去以前の工
程での、半導体受光素子の劣化を防ぎ、またキズ,ゴミ
等の異物の付着等を防ぐことができる。さらに他の部分
の樹脂の厚さを損なうことなく薄い封止体部分を除去す
ることができるので、高精度に封止体の中空領域を形成
することができ、また封止工程は厚さの薄い封止体部分
の除去工程が増えるのみであり、従来の封止工程を大幅
に変更することなく封止を行うことができる。その結果
として、製造工程上の歩留りを向上させ、取り扱いが簡
易であり、低コストで、高感度,高精度、且つ信頼性の
高い半導体受光装置を提供することができる。
[Effects of the Invention] As described in detail above, according to the method for manufacturing the semiconductor light receiving device of the present invention, at least the thickness of the sealing body on the light receiving region of the semiconductor light receiving element is made thin, and this thin film is formed in the subsequent step. By removing the sealing body portion, it is possible to prevent deterioration of the semiconductor light receiving element in the process before the removal of the sealing body portion, and to prevent foreign matter such as scratches and dust from adhering. Furthermore, since the thin encapsulant portion can be removed without impairing the thickness of the resin in other portions, the hollow region of the encapsulant can be formed with high accuracy, and the encapsulation process can reduce the thickness. Only the step of removing the thin sealing body portion is increased, and the sealing can be performed without significantly changing the conventional sealing step. As a result, it is possible to provide a semiconductor light receiving device that improves the yield in the manufacturing process, is easy to handle, is low in cost, has high sensitivity, high accuracy, and is highly reliable.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明により封止された半導体受光装置の一実
施例を示す断面図である。 第2図〜第6図は本発明の半導体受光装置の封止方法を
説明するための工程図である。 第7図はクリアモールドパッケージによって封止を行っ
た半導体受光装置の一例を示す断面図である。 1……光透過性樹脂 2……半導体チップ 3a,3b,3c……リードフレーム 4……ボンディングワイヤ 5……中空領域 6……受光領域 7……光透過性部材 8……導電接着材 9……薄い樹脂部分 10……樹脂
FIG. 1 is a sectional view showing an embodiment of a semiconductor light receiving device sealed by the present invention. 2 to 6 are process drawings for explaining the method for sealing the semiconductor light receiving device of the present invention. FIG. 7 is a cross-sectional view showing an example of a semiconductor light receiving device sealed by a clear mold package. 1 ... Light-transmitting resin 2 ... Semiconductor chips 3a, 3b, 3c ... Lead frame 4 ... Bonding wire 5 ... Hollow region 6 ... Light receiving region 7 ... Light transmitting member 8 ... Conductive adhesive 9 …… Thin resin part 10 …… Resin

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】半導体受光素子を有し、樹脂封止により封
止が行われる半導体受光装置の封止方法において、 少なくとも前記半導体受光素子の受光領域上の封止体の
厚さを薄くし、後工程でこの薄い封止体部分を除去する
ことを特徴とする半導体受光装置の封止方法。
1. A method for sealing a semiconductor light receiving device having a semiconductor light receiving element, which is sealed by resin sealing, wherein at least a thickness of a sealing body on a light receiving region of the semiconductor light receiving element is reduced, A method for sealing a semiconductor light receiving device, characterized in that the thin sealing body portion is removed in a subsequent step.
JP61162952A 1986-07-12 1986-07-12 Method for sealing semiconductor light receiving device Expired - Fee Related JPH0719892B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61162952A JPH0719892B2 (en) 1986-07-12 1986-07-12 Method for sealing semiconductor light receiving device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61162952A JPH0719892B2 (en) 1986-07-12 1986-07-12 Method for sealing semiconductor light receiving device

Publications (2)

Publication Number Publication Date
JPS6319879A JPS6319879A (en) 1988-01-27
JPH0719892B2 true JPH0719892B2 (en) 1995-03-06

Family

ID=15764384

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61162952A Expired - Fee Related JPH0719892B2 (en) 1986-07-12 1986-07-12 Method for sealing semiconductor light receiving device

Country Status (1)

Country Link
JP (1) JPH0719892B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1022787B2 (en) * 1989-05-31 2012-07-11 OSRAM Opto Semiconductors GmbH Method of producing a surface-mountable optical element and surface-mountable optical element

Also Published As

Publication number Publication date
JPS6319879A (en) 1988-01-27

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