JPH0721597B2 - Optical switch - Google Patents
Optical switchInfo
- Publication number
- JPH0721597B2 JPH0721597B2 JP24303487A JP24303487A JPH0721597B2 JP H0721597 B2 JPH0721597 B2 JP H0721597B2 JP 24303487 A JP24303487 A JP 24303487A JP 24303487 A JP24303487 A JP 24303487A JP H0721597 B2 JPH0721597 B2 JP H0721597B2
- Authority
- JP
- Japan
- Prior art keywords
- optical
- optical switch
- control electrodes
- pair
- main control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 title claims description 78
- 239000013078 crystal Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 13
- 230000005693 optoelectronics Effects 0.000 claims description 6
- 230000008878 coupling Effects 0.000 description 18
- 238000010168 coupling process Methods 0.000 description 18
- 238000005859 coupling reaction Methods 0.000 description 18
- 230000005684 electric field Effects 0.000 description 10
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
- G02F1/31—Digital deflection, i.e. optical switching
- G02F1/313—Digital deflection, i.e. optical switching in an optical waveguide structure
- G02F1/3132—Digital deflection, i.e. optical switching in an optical waveguide structure of directional coupler type
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は光通信等において光波の変調,光路の切り替え
等を行う光スイッチに関し、特に基板上部表面に形成さ
れた光導波路を用いた導波形光スイッチに関するもので
ある。Description: TECHNICAL FIELD The present invention relates to an optical switch for modulating a light wave, switching an optical path, etc. in optical communication and the like, and particularly to a waveguide type using an optical waveguide formed on the upper surface of a substrate. It relates to an optical switch.
光通信システムの実用化が進み、大容量や多機能を持つ
さらに高度のシステムへと開発が進められている。光伝
送路網の交換機能,光データバスにおける端末間の高速
接続,切り替え等の新たな機能が求められており、それ
らを可能にする光スイッチングネットワークの必要性が
高まっている。現在実用されている光スイッチは、プリ
ズム,ミラー,ファイバ等を機械的に移動させるもので
あり、低速であること、信頼性が不十分なこと、形状が
大きくマトリックス化に不適なこと等の欠点がある。こ
れらの欠点を解決する手段として開発が進められている
ものは、切板上に設置した光導波路を用いた導波形の光
スイッチであり、高速,多素子の集積化が可能,高信頼
等の特徴がある。特にLiNbO3結晶等の強誘電体材料を用
いたものは、光吸収が小さく低損失であることと大きな
電気光学効果を有しているため高効率である等の特徴が
ある。Optical communication systems are being put to practical use, and development is being advanced to higher-level systems with large capacity and multiple functions. New functions such as a switching function for optical transmission line networks, high-speed connection between terminals in an optical data bus, and switching are required, and the need for an optical switching network that enables them is increasing. Currently used optical switches mechanically move prisms, mirrors, fibers, etc., and have drawbacks such as low speed, insufficient reliability, large shape, and unsuitable for matrix formation. There is. What is being developed as a means for solving these drawbacks is a waveguide type optical switch using an optical waveguide installed on a cut plate, which is capable of high speed, integration of multiple elements, high reliability, etc. There are features. In particular, a material using a ferroelectric material such as LiNbO 3 crystal is characterized by high efficiency because it has small light absorption and low loss and has a large electro-optical effect.
従来の導波形光スイッチの一例である方向性結合形光ス
イッチの斜視図を第3図に示す。光学軸に垂直に切り出
して整形したLiNbO3結晶基板10上にTi等の金属を拡散し
て光導波路31,32が形成されている。これら光導波路31,
32は数μm程度の間隔で近接して設置されることにより
光方向性結合器35を構成しており、光導波路31,32上に
バッファ層であるSiO2膜(第2図では図示を省略)を介
して制御電極33および34が設置されている。FIG. 3 shows a perspective view of a directional coupling type optical switch which is an example of a conventional waveguide type optical switch. Optical waveguides 31 and 32 are formed by diffusing a metal such as Ti on a LiNbO 3 crystal substrate 10 which is cut out and shaped perpendicular to the optical axis. These optical waveguides 31,
32 forms an optical directional coupler 35 by being installed close to each other with an interval of about several μm, and a SiO 2 film (not shown in FIG. 2 is a buffer layer on the optical waveguides 31 and 32. ) Via the control electrodes 33 and 34.
この光スイッチの基本的な動作原理は、まず、片方の光
導波路例えば光導波路31の端面から入射した光波16は光
導波路31中を伝搬し、光方向性結合器35の部分で近接し
た光導波路32にエネルギーが移行し、光方向性結合器35
の長さを完全結合長LCに一致させた場合は、ほぼ100%
のエネルギーが光導波路32に移って出射光37となる。一
方、制御電極33と34との間に電圧を印加した場合、電気
光学効果によって光導波路31,32の屈折率が変化して両
者の屈折率が非対称となり、両者を伝搬する光波の間で
位相不整合が生じて結合状態が変化し、適当な印加電圧
の下ではもとの光導波路31へエネルギーが移り出射光38
となる。The basic operation principle of this optical switch is as follows.First, the optical wave 16 incident from one end face of the optical waveguide 31, for example, propagates in the optical waveguide 31, and the optical waveguides close to each other at the optical directional coupler 35 portion. Energy transfer to 32, optical directional coupler 35
When the length of is matched with the full bond length L C , almost 100%
Energy is transferred to the optical waveguide 32 and becomes emitted light 37. On the other hand, when a voltage is applied between the control electrodes 33 and 34, the refractive indexes of the optical waveguides 31 and 32 change due to the electro-optical effect, and the refractive indexes of the both become asymmetric, and the phase between the light waves propagating through them is increased. A mismatch occurs and the coupling state changes, and under an appropriate applied voltage, energy is transferred to the original optical waveguide 31 and the emitted light 38
Becomes
従来、導波形光スイッチには、以上のような方向性結合
形の他に、全反射形,バランストブリッジ形,Y分岐形等
の方式があるが、光スイッチにとって重要なスイッチ電
圧やクロストークを比較的容易に低くでき、且つ構成が
最も簡単なのは方向性結合形であることが知られてお
り、中でも光学軸に垂直に切り出した電気光学効果を有
する結晶の深さ方向に電界を作用させる手段により、低
スイッチ電圧が得られ、且つ製作が容易となることも知
られている。Conventionally, there are methods such as total reflection type, balanced bridge type, and Y-branching type in the waveguide type optical switch in addition to the directional coupling type as described above. It is known that the directional coupling type can be lowered relatively easily and has the simplest configuration. Among them, an electric field is applied in the depth direction of a crystal having an electro-optical effect cut out perpendicularly to the optical axis. It is also known that by means a low switch voltage is obtained and is easy to manufacture.
しかしながら、方向性結合形光スイッチには、結合長L
と印加電圧Vとに反比例関係が成立し、従来よりさらに
印加電圧を低くするためには結合長Lを長くしなけれ
ば、所定の作用が得られないという欠点があった。However, the directional coupling type optical switch has a coupling length L
And an applied voltage V are in inverse proportion to each other, and there is a drawback that a predetermined action cannot be obtained unless the coupling length L is increased in order to further lower the applied voltage.
本発明の目的は、上述の従来の導波形光スイッチの欠点
を除き、従来の同一の結合長Lに対して印加電圧Vの低
い光スイッチを提供することにある。An object of the present invention is to provide an optical switch having a low applied voltage V with respect to the same conventional coupling length L, except for the drawbacks of the conventional waveguide type optical switch described above.
本発明の光スイッチは、光学軸に垂直に切り出した電気
光学効果を有する結晶基板上部に形成された互いに近接
した2本の光導波路からなる光方向性結合器と、前記2
本の光導波路上にバッファ層を介してそれぞれ設置され
た1対の主制御電極と、前記1対の主制御電極と各々対
向し且つ前記2本の光導波路にそれぞれ近接して設置さ
れた1対の2次制御電極とから構成されることを特徴と
している。The optical switch of the present invention comprises an optical directional coupler formed of two optical waveguides adjacent to each other formed on a crystal substrate having an electro-optical effect cut out perpendicularly to the optical axis,
A pair of main control electrodes respectively installed on the two optical waveguides via a buffer layer, and a pair of main control electrodes opposed to the one pair of main control electrodes and close to the two optical waveguides, respectively. It is characterized by comprising a pair of secondary control electrodes.
従来の方向性結合形光スイッチは、方向性結合器を構成
する2本の導波路上にのみ制御電極を設置し、それによ
る電界で屈折率変化を生じさせているのに対し、本発明
においては、主制御電極と2次制御電極とによる各々の
電界を合成させることで同じ屈折率変化を低電圧で実現
できる。また、結晶基板と主制御電極との間、結晶基板
と2次制御電極との間には、結晶基板からの光の漏れに
よる吸収損失を低減するためにSiO2膜等で代表されるバ
ッファ層が設けられるが、2次制御電極下からバッファ
層を取り除くことにより、低誘電率のため電界が集中し
やすい層が除去された割合だけ、結晶に電界を集中で
き、低電圧化が図れる。In the conventional directional coupling type optical switch, the control electrode is provided only on the two waveguides forming the directional coupler, and the electric field caused by the control electrode causes a change in the refractive index. Can realize the same refractive index change at a low voltage by combining the respective electric fields of the main control electrode and the secondary control electrode. A buffer layer typified by a SiO 2 film or the like is provided between the crystal substrate and the main control electrode and between the crystal substrate and the secondary control electrode to reduce absorption loss due to light leakage from the crystal substrate. However, by removing the buffer layer from under the secondary control electrode, the electric field can be concentrated on the crystal by the rate at which the layer where the electric field is likely to be concentrated due to the low dielectric constant is removed, and the voltage can be reduced.
次に、本発明の実施例について図面を参照して説明す
る。Next, embodiments of the present invention will be described with reference to the drawings.
第1図は本発明による光スイッチの一実施例を示す斜視
図であり、第2図はその断面図である。FIG. 1 is a perspective view showing an embodiment of the optical switch according to the present invention, and FIG. 2 is a sectional view thereof.
本実施例の光スイッチは、第3図に示した従来の方向性
結合形光スイッチと同様の形状のZ軸カットLiNbO3結晶
基板10上に、厚さ数百〜千Åで幅が数〜十数μmのTi膜
パターンを熱拡散して形成した光導波路11,12が近接し
て設置されて、光方向性結合器15を構成している。光方
向性結合器が構成された結晶基板10上に例えばSiO2膜の
バッファ層21が設けられる。光導波路11,12上にはバッ
ファ層21を介してそれぞれ主制御電極13,14が設置さ
れ、さらに主制御電極13,14の各々に対向して各光導波
路11,12に近接して2次制御電極19,20が、結晶基板10上
にバッファ層21を介して設置されている。光方向性結合
器15の長さは、従来例と同様に、TM,TE両モードに対し
てほぼ完全結合長LCに等しくなるように設定されてい
る。その長さは通常数mm〜数十mmである。The optical switch of the present embodiment has a thickness of several hundred to 1,000 Å and a width of several to several thousand Å on a Z-axis cut LiNbO 3 crystal substrate 10 having the same shape as the conventional directional coupling type optical switch shown in FIG. The optical waveguides 11 and 12 formed by thermally diffusing a Ti film pattern of ten and a few μm are arranged close to each other to form an optical directional coupler 15. A buffer layer 21 made of, for example, a SiO 2 film is provided on the crystal substrate 10 having the optical directional coupler. Main control electrodes 13 and 14 are provided on the optical waveguides 11 and 12 via a buffer layer 21, respectively. Further, the main control electrodes 13 and 14 are opposed to the main control electrodes 13 and 14, respectively. Control electrodes 19 and 20 are provided on crystal substrate 10 with buffer layer 21 interposed therebetween. The length of the optical directional coupler 15 is set to be substantially equal to the complete coupling length L C for both TM and TE modes, as in the conventional example. Its length is usually several mm to several tens of mm.
以上のような構成の光スイッチの基本的な動作原理は第
3図について述べたものと同じである。まず、片方の光
導波路例えば光導波路11の端面から入射した光波16は光
導波路11中を伝搬し、光方向性結合器15の部分で近接し
た光導波路12にエネルギーが移行し、光方向性結合器15
の長さが完全結合長LCに一致しているので、ほぼ100%
のエネルギーが光導波路12に移って出射孔17となる。The basic operation principle of the optical switch configured as described above is the same as that described with reference to FIG. First, one optical waveguide, for example, the light wave 16 incident from the end face of the optical waveguide 11 propagates in the optical waveguide 11, energy is transferred to the optical waveguide 12 which is close to the optical directional coupler 15, and the optical directional coupling is performed. Bowl 15
Since the length of the match to the complete coupling length L C, almost 100%
Energy is transferred to the optical waveguide 12 and becomes the emission hole 17.
一方、2次制御電極19と主制御電極13との間、主制御電
極13と14との間、主制御電極14と2次制御電極20との間
にそれぞれ電圧を印加した場合、電気光学効果によって
孔導波路11,12の屈折率が変化して両者の屈折率が非対
称となり、両者を伝搬する光波の間で位相不整合が生じ
て結合状態が変化し、適当な印加電圧の下ではもとの光
導波路11へエネルギーが移り出射光18となる。On the other hand, when a voltage is applied between the secondary control electrode 19 and the main control electrode 13, between the main control electrodes 13 and 14, and between the main control electrode 14 and the secondary control electrode 20, the electro-optical effect Due to this, the refractive indices of the hole waveguides 11 and 12 are changed and the refractive indices of the two become asymmetrical, phase mismatch occurs between the light waves propagating through them, and the coupling state changes, and even under an appropriate applied voltage. Energy is transferred to the optical waveguide 11 and becomes emitted light 18.
本実施例の方向性結合形スイッチが第3図の従来の方向
性結合形光スイッチと異なる点は、従来の方向性結合形
光スイッチが、方向性結合器を構成する2本の導波路上
にのみ制御電極を配置し、それによる電界で屈折率変化
が生じさせているのに対し、本実施例においては、主制
御電極13,14と2次制御電極19,20とによる各々の電界を
合成させることで、同じ屈折率変化を低電圧で実現して
いることにある。The directional coupling type switch of the present embodiment is different from the conventional directional coupling type optical switch shown in FIG. 3 in that the conventional directional coupling type optical switch is on two waveguides constituting a directional coupler. The control electrode is disposed only on the first control electrode, and the change in the refractive index is caused by the electric field caused by the control electrode. On the other hand, in the present embodiment, the respective electric fields caused by the main control electrodes 13 and 14 and the secondary control electrodes 19 and 20 are changed. By synthesizing them, it is possible to realize the same change in refractive index at a low voltage.
例えば、第2図に示すように、各電極間に極性が交互に
異なる電圧V1,V2,V3を印加すれば、第3図に示した従来
の光スイッチの場合に比べ、電界強度が増大し且つ図中
矢印で示すように電界分布の対称化が図れ、印加電圧を
低減した光スイッチが得られる。For example, as shown in FIG. 2 , if voltages V 1 , V 2 and V 3 having different polarities are alternately applied between the electrodes, the electric field strength is higher than that of the conventional optical switch shown in FIG. Is increased and the electric field distribution can be made symmetrical as shown by the arrow in the figure, and an optical switch with a reduced applied voltage can be obtained.
以上の実施例では、2次制御電極19,20の下にバッファ
層21が設けられているが、2次制御電極下からこのバッ
ファ層を取り除くことにより、結晶に電界を集中させる
ことができ、さらに低電圧化が図れる。In the above embodiments, the buffer layer 21 is provided below the secondary control electrodes 19 and 20, but by removing this buffer layer from under the secondary control electrodes, it is possible to concentrate the electric field on the crystal, Further lower voltage can be achieved.
〔発明の効果〕 以上述べたように本発明によれば、従来の光スイッチよ
りもスイッチ電圧が低く、且つ製作の容易な光スイッチ
が得られる。[Effects of the Invention] As described above, according to the present invention, it is possible to obtain an optical switch that has a lower switch voltage than the conventional optical switch and is easy to manufacture.
第1図は本発明による光スイッチの一実施例を示す斜視
図、 第2図は第1図の光スイッチの断面図、 第3図は従来の光スイッチの一例を示す斜視図である。 10……Z軸カットLiNbO3結晶基板 11,12,31,32……光導波路 13,14……主制御電極 15,35……光方向性結合基 19,20……2次制御電極 16……光波 17,18,37,38……出射光 21……バッファ層 33,34……制御電極FIG. 1 is a perspective view showing an embodiment of an optical switch according to the present invention, FIG. 2 is a sectional view of the optical switch of FIG. 1, and FIG. 3 is a perspective view showing an example of a conventional optical switch. 10 …… Z-axis cut LiNbO 3 crystal substrate 11,12,31,32 …… Optical waveguide 13,14 …… Main control electrode 15,35 …… Optical directional coupling group 19,20 …… Secondary control electrode 16… … Light wave 17,18,37,38 …… Outgoing light 21 …… Buffer layer 33,34 …… Control electrode
Claims (3)
有する結晶基板上部に形成された互いに近接した2本の
光導波路からなる光方向性結合器と、前記2本の光導波
路上にバッファ層を介してそれぞれ設置された1対の主
制御電極と、前記1対の主制御電極と各々対向し且つ前
記2本の光導波路にそれぞれ近接して設置された1対の
2次制御電極とから構成されることを特徴とする光スイ
ッチ。1. An optical directional coupler composed of two optical waveguides adjacent to each other formed on a crystal substrate having an electro-optical effect cut out perpendicularly to an optical axis, and a buffer on the two optical waveguides. A pair of main control electrodes, each of which is disposed via a layer; and a pair of secondary control electrodes, which are respectively opposed to the one pair of main control electrodes and are disposed close to each of the two optical waveguides. Optical switch characterized by being composed of.
上にバッファ層を介して設置したことを特徴とする特許
請求の範囲第1項記載の光スイッチ。2. The optical switch according to claim 1, wherein the pair of secondary control electrodes are provided on the crystal substrate via a buffer layer.
表面に直接配置したことを特徴とする特許請求の範囲第
1項記載の光スイッチ。3. The optical switch according to claim 1, wherein the pair of secondary control electrodes are directly arranged on the surface of the crystal substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24303487A JPH0721597B2 (en) | 1987-09-28 | 1987-09-28 | Optical switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24303487A JPH0721597B2 (en) | 1987-09-28 | 1987-09-28 | Optical switch |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6484230A JPS6484230A (en) | 1989-03-29 |
| JPH0721597B2 true JPH0721597B2 (en) | 1995-03-08 |
Family
ID=17097870
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24303487A Expired - Lifetime JPH0721597B2 (en) | 1987-09-28 | 1987-09-28 | Optical switch |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0721597B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7809217B2 (en) | 2007-01-23 | 2010-10-05 | Murata Manufacturing Co., Ltd. | Light control element |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008049921A (en) * | 2006-08-25 | 2008-03-06 | Mazda Motor Corp | Car movable floor equipment |
| JP2008049920A (en) * | 2006-08-25 | 2008-03-06 | Mazda Motor Corp | Car movable floor equipment |
| JP4945198B2 (en) * | 2006-08-25 | 2012-06-06 | マツダ株式会社 | Car movable floor equipment |
-
1987
- 1987-09-28 JP JP24303487A patent/JPH0721597B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7809217B2 (en) | 2007-01-23 | 2010-10-05 | Murata Manufacturing Co., Ltd. | Light control element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6484230A (en) | 1989-03-29 |
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