JPH0725209B2 - Optical information recording member - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical information recording member capable of recording and erasing optical information at high speed and high density by irradiating a high-density energy beam such as a laser beam.

[0002]

2. Description of the Related Art The following are known as optical information recording / reproducing systems. First is a method using a metal thin film. This is a method of writing information by irradiating the thin film with a laser beam spot that is narrowed down. For example, indium metal I
n (melting point Tm = 156 ° C.) or bismuth metal Bi
It is known that (melting point Tm = 271 ° C.) or the like is formed as a thin film of about 1000 Å on a substrate. The recording mechanism for this member uses a light source such as a laser to irradiate the thin film with a minute spot of 10 μmφ, and the metal at the spot portion is melted, condensed, or evaporated as a result of light absorption and temperature rise of the metal film. However, a small hole is formed in this part,
The image signal is recorded. This method has an advantage that recording with a relatively large contrast can be performed. However, the fact that this optical density change is accompanied by mass transfer limits the structure of the recording medium. Furthermore, sensitivity is 1
The problem is that it is as low as 00 to 10 mW / μm ² .

The second example is an information recording / reproducing method using a Te-based material instead of the metal thin film in the first example. This is, for example, Te-Se- (As), T as a recording member.
e-C, CS ₂ -Te, etc. can be recorded in the same mechanism as in the first example in those that use. Although this method is reported to have improved sensitivity as compared with the first example, the structure of the recording body is also limited due to the movement of substances.

The third example is an information recording / reproducing method using a semiconductor glass material. This uses a chalcogenide as a recording member. For example, Ge ₁₅ Te ₈₁ Sb is used.
Materials such as ₂ S ₂ , As ₂ S ₃ and As ₂₀ Se ₆₀ Ge ₂₀ are typical. When these thin films are irradiated with light such as a laser, the temperature of light absorption rises to change the bonding state of atoms, change the optical density, and record information. Further, by controlling the light irradiation method, it is possible to return the recorded state to the opposite, and there is an advantage of having an erasing function. However, when used for optical information recording, the recording energy is 20 mW /
The writing contrast ratio is inadequate because it requires at least μm ² . It is also known that deterioration due to humidity is large.

On the other hand, as a fourth example, an oxide having a stoichiometric composition and a mixture of metal or metalloid particles constituting the oxide, or an oxide having less oxygen than the stoichiometric composition is used. There is a proposal of an information recording method using a low oxide thin film. These are capable of recording and reproducing information by changing the optical density from a low optical density state to a high optical density state as a result of light absorption temperature rise by irradiation with laser light. These low oxide thin films have large changes in optical density upon light irradiation, ΔT> 30%, and a contrast ratio of 10: 1 or more. Also, the recording energy is 10 mW / μm ²
Although it has a characteristic of high sensitivity as follows, the erasability as seen in the third example is insufficient.

As a method for improving the erasability, an information recording / reproducing method using a thin film recording member in which a low oxide contains S or Se which is a chalcogen element has been proposed.
This method is characterized by high recording sensitivity and erasability, but it has not been put to practical use because it has a problem that the film is damaged and broken when repeated recording and erasing are performed. Further, since a substance having a relatively high vapor pressure such as S and Se is used, it is difficult to control the composition during production, and there is a problem that the reproducibility of the film is poor.

[0007]

DISCLOSURE OF THE INVENTION The present invention provides an optical information recording member capable of repeating recording and erasing while maintaining the characteristics that a low oxide thin film has a large change in optical density and a small energy required for recording. The purpose is to provide a recording / erasing method.

[0008]

The optical information recording member according to the present invention has a light-absorbing recording thin film formed on a substrate, the recording thin film having an optical characteristic reversibly changed by light irradiation. An optical information recording member that is capable of repeatedly recording and erasing information, wherein the recording thin film is a low oxide TeO of Te.
_{In x} (0 <x <2) , Ib group such as Cu, IIb such as Zn
Group, Group IIIb such as Al and In, Group IVb such as Ge and Sn,
Larger thermal conductivity than TeO _x of Vb group such as Sb and Bi
Of high-absorption metal, noble metal or semiconductor material
It is formed by including at least one substance selected from the group .

[0009]

Function: TeO _x thin film is amorphous TeO ₂
A system in which Te crystallites are dispersed in a matrix of
When this is irradiated with a laser beam, the crystal grain size increases, and as a result, the recording state is detected as a change in reflectance / transmittance. This Te crystal having a large grain size can be reduced again by raising the temperature of this thin film to a high temperature equal to or higher than the melting point and then rapidly cooling it, but TeO _x (O <x
In the case of <2), one is Te around the Te crystal.
That thermal energy generated as a result of light absorption for O ₂ matrix of small glass material thermal conductivity that is present is not easily quenched difficult to diffuse, and the other is relatively small absorption coefficient of TeO _x itself Therefore, it is not easy to convert a large crystal into a small crystal again for two reasons that the light absorption efficiency is low and it is difficult to raise the temperature to a required temperature (melting point). In the case of the present invention, it is possible to increase or decrease the grain size of the Te crystal in the thin film by including a metal or metalloid substance having a higher thermal conductivity and a higher light absorption coefficient than the TeOx thin film. It became possible to perform reversibly repeatedly.

[0010]

EXAMPLES The principle of blackening recording in a conventional low oxide thin film is considered as follows. For example, TeO _x (O <x <
In the case of 2), Te is present in a very small (about 20Å) crystalline state in the TeO ₂ matrix in the amorphous state. When this film is irradiated with laser beam light,
The grain size of the small Te crystal in the irradiated portion increases, the refractive index and extinction coefficient change, and as a result, the recording state can be detected as a change in reflectance and transmittance. However, it was difficult to return the Te crystals having a large grain size to the original Te crystals having a small grain size. That is, in general, in order to make a large crystal into a small crystal, it is necessary to raise the temperature of the substance to a high temperature equal to or higher than the melting point and then rapidly cool it. In the case of TeO _x (O <x <2), Is T
Since there is a matrix of TeO _{2 which} is a glassy material with small thermal conductivity around the crystal of e, the thermal energy obtained by light absorption is difficult to diffuse and is not rapidly cooled. Another is absorption of TeO _x itself. Since the coefficient is relatively small, the light absorption efficiency is poor and the required temperature (melting point)
From the two points that it was difficult to raise the temperature, it was not possible to make a large crystal again into a small crystal. In the case of the present invention, Te
The metal or semimetal contained in the low oxide thin film is considered to have the following functions.

(1) The light absorption coefficient of the film is increased, and the ultimate temperature of the light irradiation portion is increased. It exists around the small crystals of 2 Te and helps diffuse the absorbed heat.

That is, when Te oxide, which is the base material of the recording thin film, is made to contain a metal or semi-metal substance having a higher thermal conductivity and a higher light absorption coefficient than that of the thin film, the T oxide in the thin film is examined.
It was found that increasing and decreasing the grain size of the e crystal was repeated, and the reversible process could be performed.

Next, referring to the drawings, with an embodiment,
The present invention will be described in more detail. FIG. 1 is a sectional view of an optical information recording member according to the present invention. 1 is a base material, metal,
For example, aluminum, copper, or glass, such as quartz, Pyrex, soda glass, or resin, AB
S resin, polystyrene, acrylic, vinyl chloride, etc., and as the transparent film, acetate, Teflon, polyester, etc. can be used. Above all, when a polyester film, an acrylic plate, or the like is used, the transparency is excellent and it is effective in optically reproducing the formed signal image.

The thin film photosensitive layer 2 is formed by vacuum vapor deposition on a base material. The thin film photosensitive layer has a structure in which at least one metal or metalloid substance is contained in a TeO _x (O <x <2) low oxide. As a substance to be contained, a metal or a semi-metal substance is effective in order to increase the light absorption coefficient of the film, and to increase the thermal conductivity so as to facilitate the purpose of being rapidly cooled from a high temperature state. Ease of vapor deposition,
Considering to make the first metal or metalloid into a smaller crystal, Sn, In, Bi, Zn, Al, Cu, G
Metals or semimetals such as e and Sb are particularly effective.

Reference numeral 3 is a protective layer. As described above, the optical information recording film of the present invention does not change the shape of the film, and therefore it is possible to use a protective layer of a close contact type depending on the purpose of use. The same material as the base material 1 can be attached to the protective layer by laminating or vapor-depositing it using an ultraviolet curable resin or the like.

Next, the method for forming the optical information recording film in the present invention will be described. Oxide M _A O _x (M _A is a tetravalent metal or metalloid) low oxide thin film _{M A O 2 (O <x} <
2), and a low oxide thin film M _B O _x (O <x <1.5) of M _B2 O ₃ (M _B is a trivalent metal or metalloid) is prepared by the method described in FIGS. Can be formed with.

First, a method of forming with one source will be described. FIG. 2 shows a generation system used for this. The vacuum degree of the vacuum system 4 is selected in the range of 10 ⁻³ Torr to 10 ⁻⁶ Torr.

For example, M _A O ₂ as a raw material 10 for vapor deposition is placed in a vessel 9 for heating vapor deposition such as a metal boat, for example, a tungsten boat or a titanium boat, and the tungsten boat 9 is connected to an electrode 6 in a vacuum system 4, When heated using the power source 8, the raw material in the container 9 reacts with the tungsten boat to undergo a reduction reaction, and thus M _A O ₂ + mW → M _A O _x + m
_A low oxide thin film M _A O _x (O <x is deposited in the form of WO ₃ (O <x <2, m <2/3) on the base material 1 installed on the supporting base 6. <2) can be obtained. Therefore, in advance by mixing the second metal or semimetal material described above should be contained in the film in advance M _A O ₂ Ingredients [M _A O _2
100-z1 M _Cz1 and M _C are additive materials, provided that when z1 is mol% and the vapor deposition is performed in the form of O <z1 <50], a low oxide containing a second metal or semimetal other than the base material. Thin film [(M _A O _x )
_100-z2 M _Cz2 , (O <x <2, O <z2 <50), M _C is an additive material, and z2 is mol%].

When a stable quartz crucible, alumina porcelain, platinum or the like is used as the heating vapor deposition container 9, a reducing material R (Fe, Cr, W,) or other powder is added to the raw materials. The container 9 is heated by using the coil heater 7. The heating temperature is selected in the range of 600 ° C to 1000 ° C.

Next, a method for forming a low oxide by simultaneously performing vapor deposition on a substrate from several sources will be described.
FIG. 3 shows a generation system used for this. The vacuum degree of the vacuum system 4 is selected in the range of 10 ⁻³ to 10 ⁻⁶ Torr. Deposition container 9
M _A O ₂ as one of the raw materials 10 and M _100-z1 M _Cz1 (O <z as one of the raw materials 10 in another vapor deposition container 9).
1 <50, M _C ; additive material), and heated by the power source 8 using the coil heaters 9 respectively coupled to the electrodes 8 in the vacuum system 4. At this time, by appropriately controlling the vapor deposition rates of the two sources, M _A O ₂ + m ( _{MA100 -z1} ) M _Cz1 →
In (M _A O _x) of the _100-z2 M _Cz2 shape, it is possible to obtain a second metal other than the base material, a low oxide thin film containing a metalloid.

Further multi-source, for example, M _A O ₂ ,
It is also possible to use a method in which vapor deposition is performed simultaneously from three sources, M _A and M _C. Further, as a heating method, a method of directly heating with an electron beam is also possible. The vapor deposition film thickness can be freely changed depending on the amount of raw materials, the distance relationship between the vapor deposition surface and the source, and the like.

The thin film obtained by the above method has a pale brown color, and the optical density changes to black brown (which is called blackening) when energy is applied with a relatively weak power and a relatively long pulse width. On the other hand, if energy is applied with a relatively strong power and a relatively short pulse width, on the contrary, it is possible to cause a reversible change in which the optical density lowers (whitening).

If the content mol% (z2) of the second metal or semimetal contained in the low oxide thin film exceeds 50 mol%, the laser power required for whitening becomes large, so that the output of a semiconductor laser or the like is increased. This is not preferable when using a light source with low power.

Next, an embodiment of recording, reproducing and erasing information on the information recording member of the present invention will be described with reference to FIGS. The information recording member of the present invention includes a xenon flash lamp,
Writing with near infrared light by a gas laser such as He-Ne or a semiconductor laser is possible.

First, a recording method using a xenon lamp will be described based on the embodiment shown in FIG.
A light-absorbing thin film optical recording film 2 in which a low oxide contains at least one of a second metal and a semimetal different from the base material.
A mask 11 formed with a pattern having a different light transmittance locally is brought into close contact with the recording member formed on the substrate 1. By exposing and irradiating the xenon lamp 12 from above, the exposed portion is blackened, and a grayscale image corresponding to the pattern is formed on the recording member. In this case, the emission width of the xenon lamp is relatively long, about 1 msec, and it is difficult to whiten the blackened portion using this system. However, as will be described later, it is possible to whiten the blackened portion by other means.

Next, a recording method using a gas laser will be described with reference to FIG. The laser light source 13 is H
e-Ne laser λ = 6328Å, He-Cd laser λ =
Any of 4416Å, Ar laser λ = 5145Å, etc. can be used. The laser light 14 emitted from the laser light source is intensity-modulated according to a signal by an optical modulator 15, for example, a LiNbO ₃ electro-optical modulator or an ultrasonic optical modulator, and passes through a mirror 16 to a focusing lens (objective lens). ) 17, a spot is formed, and the optical recording member configured by providing the light absorbing recording film 2 on the substrate 1 is irradiated with light intensity corresponding to a signal. Bit signals are sequentially written on the recording member as the light beam and the optical recording member move relative to each other.

A semiconductor laser λ = 820 as a laser light source.
FIG. 6 shows an embodiment in which 0Å is used. A semiconductor laser generally has a divergence of a beam of emitted laser light of ± 20.
Since the angle is large in degrees, the spot is formed using the first and second lenses for beam forming. The laser beam emitted from the semiconductor laser 18 becomes pseudo parallel light 20 by the first lens 19 and is shaped into spot light 22 by the second lens 21, and the light absorbing thin film recording film 2 on the base material 1 described above. The recording member provided with is irradiated with light intensity corresponding to the signal. When using a semiconductor laser,
Unlike a gas laser, internal modulation is easy and an optical modulator is unnecessary. It can be recorded as a change in optical density by blackening at the part irradiated with light.

When a laser is used, its intensity and pulse width can be selected by modulating it. Therefore, when recording on the recording layer in a white state, blackening recording is performed with a relatively weak and long pulse, and whitening and erasing is performed with a relatively strong and short pulse. When recording, either of two methods can be adopted: whitening recording is performed with relatively strong and short pulses, and blackening erasing is performed with relatively weak and long pulses. At this time, it is necessary to appropriately set the irradiation light power density PmW / μm ² and the irradiation light pulse width Isec. In the optical information recording film in which the Te low oxide thin film of the present invention contains a metal or a semimetal, in the case of blackening, the blackening light irradiation power P
_B is 0.5 mW / μm ² <P _B < ² mW / μm ² , light irradiation pulse width τ _B is 30 nsec <τ _B , and when whitening occurs,
Whitening light irradiation power density P _W is ² mW / μm ² ≦ P _W ; P _W
≧ P _B and the light irradiation pulse width τ _W can be selected in the range of O <τ _W ≦ τ _B. Since the recording speed can be selected faster for whitening than for blackening, when recording information, it is advantageous to perform whitening on a previously blackened recording member and perform erasing by blackening.

Next, an information reproducing method of the recorded signal will be described. The information recording thin film is light brown in the unwritten state in the case of blackened recording, but changes to grayish brown or black in the written state to increase the optical density and the reflectance. When reading the signal,
As shown in the embodiments of FIGS. 7 and 8, transmissive optical signal reproduction and reflective optical signal reproduction are possible.

The transparent reproducing method will be described with reference to FIG.
The irradiation light source 23 can be a tungsten lamp, a He-Ne laser, a semiconductor laser, a light emitting diode, or the like,
The condensing lens 24 is used to form spot light 25, and the signal image 26, which is the recording portion, is illuminated from the back surface. The transmitted light from the signal recording film becomes detection light 28 through the lens 27 and enters the photosensitive diode 29. The intensity of the transmitted light 28 is reduced from about 1/2 to 1/10 in the case of illuminating the signal image as compared with the state in which there is no recording signal, and the signal is reproduced by detecting this.

Next, the present invention will be described with reference to more specific examples. (Example 1) TeO ₂ and Te ₈₅ as starting materials for vapor deposition
A thin film is formed using Sn ₁₅ and the system as shown in FIG. A quartz crucible is used as a container for heating vapor deposition, and it is heated by a coil heater to have a thickness of about 1200 on an acrylic resin base material.
A low oxide thin film TeO _x : Sn of Å is formed. The heater temperature was set to 800 ° C. for the TeO ₂ source and 750 ° C. for the Te ₈₅ Sn ₁₅ source. The thin film obtained by the above method has a light brown color. When this film was irradiated with pulsed light for 200 nsec of irradiation time using a semiconductor laser of λ = 8300Å, the film turned black-black with a power density of 0.6 mW / μm ² or more. When this blackened area was irradiated with short pulsed light with an irradiation power density of 5 mW / μm ² or more and an irradiation time of 40 nsec, the irradiated portion was whitened and returned to its original state. The spectral transmittance curve of this thin film is curve a in FIG.
_As shown in _1, when the wavelength of the semiconductor laser is around 0.8μ,
It has a transmittance of at least%. The spectral transmittance curve of this film in the blackened recording state has a decreased transmittance as shown by the curve a _2, and a ΔT of 20% or more can be obtained at the semiconductor laser wavelength. Recording / erasing is changed between the states a ₁ and a ₂ .

Instead of Sn as an additive, In, G
Similar effects could be obtained by using e, Zn, Tl, Bi, Pb, Al, Cu and the like. Similarly, GeO ₂ , SnO ₂ or the like is used as the raw material oxide, and GeO ₂ and Ge ₅₀ T are used.
For example, GeO _x : Te, SnO _x : Te can be obtained by a combination such as e ₅₀ , SnO ₂ and Sn ₅₀ Te ₅₀ . These have a large change in optical density as compared with the TeO _x recording thin film, and their spectral transmittance curves are b
₁ , c ₁ , b ₂ and c ₂ in the blackened state, and b ₁ →
b ₂ , c ₁ → c ₂ and vice versa.

These recording films have a semiconductor laser wavelength of 0.8.
It is possible to obtain a large write change amount ΔT> 30% in the vicinity of μ, but the recording sensitivity is slightly low and the irradiation time is 200%.
Irradiation power pulse density of 1m
Blackened at a power density of W / μm ² or more. Further, when this blackened portion was irradiated with short pulsed light with an irradiation power density of 7 mW / μm ² or more and an irradiation time of 40 nsec, the irradiated portion was whitened and returned to its original state. GeO _x , SnO _x (O <x <
Also in the case of 2), in addition to Te as the additive, Zn, In, Tl, Bi, Pb, as the second metal and metalloid,
Al, Cu, Sb, Ge, Sn, etc. were examined, and reversible changes were confirmed in any of the additives, but in the case of GeO _x , Te, Sb, SnO _x , Ge, Te, S
It was particularly effective when b was added.

A specific example of using a low oxide of a trivalent metal or a semimetal will be described below. (Example 2) Bi ₂ O ₃ and Bi were used as starting materials for vapor deposition.
₅₀ Te ₅₀ is used, and the low oxide thin film Bi is used as in Example 1.
O _x : Te is formed. The heater temperature was set to 850 ° C. for a Bi ₂ O ₃ source and 700 ° C. for a Bi ₅₀ Te ₅₀ source to obtain a light brown thin film having a thickness of about 1200Å. BiO _x : Te
The thin film can obtain a change in optical density with relatively low energy. When this thin film was irradiated with pulsed light with an irradiation time of 200 nsec using a semiconductor laser of λ = 8300Å, the film turned grayish with a power density of 0.5 mW / μm ² or more. Irradiation time 40n in this blackened area
When irradiated with pulsed light for sec, irradiation power density is 4 m
When W / μm ² or more, the irradiated part was whitened and returned to the original state. The spectral transmittance curve of this thin film has a similar transmittance in the vicinity of the semiconductor laser wavelength of 08 μ as shown by the curve d ₁ in FIG. 10A, but the optical density change is relatively small, and the spectral transmittance in the blackened recording state is relatively small. As shown by the curve, curve d ₂ in FIG. 10A, the change in transmittance is slightly small, and ΔT = 10%. Instead of Te as an additive, Ge, Sn, In,
Similar effects could be obtained using Zn, Tl, Bi, Pb, Al, Cu, etc., but the effect of Te was particularly high.

Similarly, as raw material oxides, Sb ₂ O ₃ and Sb ₅₀ Te ₅₀ , Tl ₂ O ₃ and Tl ₇₅ Te ₂₅ , In ₂ O ₃ and I are used.
Low oxide thin film, BiO _x : T in combination with n ₅₀ Te ₅₀
It is possible to obtain e, TlO _x : Te, InO _x : TeO <x <1.5.

FIGS. 10A and 10B show spectral transmittance curves before and after blackening. d ₁ , e ₁ , f ₁ , and g ₁ represent whitening states, respectively. In the blackened state, d ₂ , e ₂ , f ₂ and g _{2 are produced} , and d ₁ → d ₂ , e ₁ → e ₂ , f ₁ → f ₂ , g ₁ → g ₂ and vice versa. The recording sensitivities of these are almost the same as those of TeO _{x and the} like, but the optical density change is rather small, and the writing change ΔT is about 10 to 15% in the vicinity of the semiconductor laser wavelength of 0.8 μ. .

The above BiO _x , SbO _x , TlO _x , In
In the case of O _x (O <x <1.5), Zn, In, Tl, Bi, Pb, Al, Cu, S as well as Te as an additive
b, Ge, Sn, etc. were examined, and a reversible change could be confirmed in any additive, but in the case of BiO _x , Te, S
In the case of b, Ge and SbO _x , Te, Ge and TlO _x were particularly effective, and in the case of TeO and InO _x , Te, Sb and Ge were particularly effective.

It is possible to change the sensitivity, the amount of change in writing, etc., by combining some of the composite compositions of Examples 1 and 2, that is, a low oxide and some additive materials.

Next, with reference to FIG. 11, a method of recording / erasing on the information recording member in the present invention by using two semiconductor lasers having different spot lengths will be described.

(Embodiment 3) The optical information recording member of the present invention is φ
36 in the shape of 200 discs. The optical system on the left side is an optical system for whitening and reproduction. The light emitted from the whitening laser 37 becomes pseudo-parallel light 39 by the first lens 38, is circularly shaped by the second lens 40, and is converted into parallel light 42 again by the third lens 41, and the half mirror 43 is set. Through the 4th
The light is focused on a circular spot 45 narrowed down by the lens 44 to a wavelength limit of about 0.8 μ. Irradiation by this circular spot is performed by the disk medium 36 rotating at 1800 rpm.
In the above, the same effect as that given the pulsed light having a relatively high power density and a relatively short irradiation time is obtained. Therefore, when the recording film is previously blackened, the whitening signal 47 can be recorded on the blackening track 46 by laser modulation.

The detection of the signal is carried out by the light sensitive diode 51 through the lens 50 and the reflected light 48 from the disk surface of the disk medium 36 received through the half mirror 49.

The optical system on the right side is a blackening optical system.
The beam emitted from the blackening laser 51 is the first lens 52.
The light becomes quasi-parallel light 53 at, and the second lens 54 squeezes in only one direction, and the third lens 55 makes it pseudo-parallel light again. The light is emitted as a slightly elongated spot light 58 on the surface. If the longitudinal direction of this elongated spot is aligned with the rotation direction of the disc, the same effect as that obtained by irradiating the disc surface with pulsed light having a slightly low irradiation power density and a relatively long irradiation time can be obtained. Therefore, the recording film can be blackened at the same number of rotations as the whitening spot.
In the case of this embodiment, as recording members, φ200, t
A vapor-deposited TeO _x : Sn thin film was used on the 1.1 acrylic substrate. Laser for blackening is about 8μ at full width at half maximum
× 0.8μ, output 11 mW, power density about 0.
8mW / μm ² and laser output for whitening 8m
When whitening recording and blackening erasing were performed at a position of φ150 using W and power density of about 6 mW / μm ² , a C / N ratio of 55 dB or more was obtained at a single frequency of 5 MHz and 100,000 times recording and erasing were performed. No deterioration of C / N was observed even after repeating.

[0043]

As described above, according to the present invention, the optical density change can be made large and the erasure can be performed at the same time as compared with the recording member using the information recording thin film made of only low oxide or the chalcogenide material thin film. An optical information recording member having a function and capable of recording / erasing with low energy can be obtained.

[Brief description of drawings]

FIG. 1 is a sectional view showing an embodiment of an optical information recording member of the present invention.

FIG. 2 is an apparatus 1 for manufacturing an optical information recording member of the present invention.
Sectional view showing an embodiment

FIG. 3 is a sectional view showing another embodiment of the apparatus for manufacturing the optical information recording member of the present invention.

FIG. 4 is a schematic configuration diagram of a method of recording on an information recording member of the present invention with flash light.

FIG. 5 is a schematic configuration diagram of a method of recording on an information recording member of the present invention using gas laser light.

FIG. 6 is a schematic configuration diagram of a method of recording on an information recording member of the present invention using a semiconductor laser beam.

FIG. 7 is a schematic configuration diagram showing an optical signal reproducing method (transmission type) of the information recording member of the present invention.

FIG. 8 is a schematic configuration diagram showing an optical signal reproducing method (reflection type) of the information recording member of the present invention.

FIG. 9 is a spectral transmittance curve diagram of one example of the optical information recording member of the present invention.

FIG. 10 is a spectral transmittance curve diagram of another example of the optical information recording member of the present invention.

FIG. 11 is a schematic configuration diagram of a recording / reproducing apparatus for performing recording, reproduction / erasing using the optical information recording member and the optical information recording method of the present invention.

[Explanation of symbols]

 1 Base Material 2 Thin Film Photosensitive Layer 3 Protective Layer 4 Vacuum System 5 Support 6 Electrode 7 Coil Heater 8 Power Supply 9 Heating Vapor Deposition Container 10 Deposition Material 11 Mask 12 Xenon Lamp 13 Laser Light Source 14 Laser Light 15 Optical Modulator 16 Mirror 17 Focusing Lens 18 Semiconductor laser 19 First lens 20 Pseudo-parallel light 21 Second lens 22 Spot light 23 Illumination light source 24 Condensing lens 25 Spot light 26 Signal image 27 Lens 28 Detection light 29 Photosensitive diode 30 Laser beam 31 Half Mirror 32 Parallel light 33 Focusing lens 34 Reflected light 35 Focusing lens 36 Disk recording medium 37 Whitening laser 38 First lens 39 Pseudo parallel light 40 Second lens 41 Third lens 42 Pseudo parallel light 43 Half mirror 44 fourth lens 45 circle spot Light 46 Blackening track 47 Whitening signal 48 Reflected light 49 Half mirror 50 Lens 51 Photosensitive diode 52 Blackening laser 53 First lens 54 Pseudo parallel light 55 Second lens 56 Third lens 57 Parallel light 58 Half mirror 59 4th lens 60 Elongated spot

Claims (2)

[Claims] 1. An optical information recording member which is formed by forming a light absorbing recording thin film whose optical characteristics are reversibly changed by light irradiation on a base material and is capable of repeatedly recording and erasing information. And the recording thin film is Te low oxide TeO.
_{In x} (0 <x <2), Sn, In, Bi, Zn, Al,
An optical information recording member comprising at least one material selected from the group consisting of Cu, Ge and Sb . Wherein TeO _x in the optical information recording member according to claim 1, wherein the content was a maximum 50 mol% of the material.