Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JPH0727012B2 - Semiconductor integrated circuit - Google Patents
[go: Go Back, main page]

JPH0727012B2 - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPH0727012B2
JPH0727012B2 JP63117370A JP11737088A JPH0727012B2 JP H0727012 B2 JPH0727012 B2 JP H0727012B2 JP 63117370 A JP63117370 A JP 63117370A JP 11737088 A JP11737088 A JP 11737088A JP H0727012 B2 JPH0727012 B2 JP H0727012B2
Authority
JP
Japan
Prior art keywords
power supply
supply voltage
signal
main circuit
test
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP63117370A
Other languages
Japanese (ja)
Other versions
JPH01287487A (en
Inventor
博行 原田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP63117370A priority Critical patent/JPH0727012B2/en
Publication of JPH01287487A publication Critical patent/JPH01287487A/en
Publication of JPH0727012B2 publication Critical patent/JPH0727012B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Tests Of Electronic Circuits (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は半導体集積回路のテストを行なうための回路
構成に関するものである。
The present invention relates to a circuit configuration for testing a semiconductor integrated circuit.

〔従来の技術〕[Conventional technology]

第2図は従来の半導体集積回路を示す構成図である。図
において、1はパッケージされた半導体集積回路の主回
路であり、入力パッド2及び出力パッド3を有する。4
は半導体集積回路の外部より主回路1への電源電圧を供
給するための主電源電圧供給端子である。
FIG. 2 is a block diagram showing a conventional semiconductor integrated circuit. In the figure, 1 is a main circuit of a packaged semiconductor integrated circuit, which has an input pad 2 and an output pad 3. Four
Is a main power supply voltage supply terminal for supplying a power supply voltage to the main circuit 1 from outside the semiconductor integrated circuit.

次に、主回路1のバーンインテストを行う動作について
説明する。半導体集積回路を恒温槽内で所定温度条件下
に置き、半導体集積回路の外部の図示していない信号発
生装置から入力パッド2にテスト信号を供給する。この
テスト信号に応じ、出力パッド3から信号が出力され
る。この出力信号を測定し、規格値内か否かを判定する
ことによりバーンインテストを行う。
Next, the operation of performing the burn-in test of the main circuit 1 will be described. The semiconductor integrated circuit is placed under a predetermined temperature condition in a thermostatic chamber, and a test signal is supplied to the input pad 2 from a signal generator (not shown) outside the semiconductor integrated circuit. A signal is output from the output pad 3 according to the test signal. A burn-in test is performed by measuring this output signal and determining whether it is within the standard value.

〔発明が解決しようとする課題〕[Problems to be Solved by the Invention]

従来の半導体集積回路は以上のように構成され、バーン
インテストを行なう場合、テスト信号発生装置を有する
恒温槽を用いている。この場合、多くの半導体集積回路
を一度にバーンインテストするには恒温槽の容積内とい
う限界があるという問題点があった。また、各品種ごと
に異なる入力信号パターンを作成しなければならず、テ
スト信号発生回路が発生することができる入力信号パタ
ーンにも限界があるという問題点もあった。また、パッ
ケージされた半導体集積回路1個の占める容積が大きい
こと、及び半導体集積回路は品種ごとにパッケージの形
状が異なり恒温槽内に品種ごとにバーンインテスト専用
基板を設ける必要があり、ある品種をバーンインテスト
し、その他の品種をテストしない場合、恒温槽の使用効
率が悪いという問題点もあった。
The conventional semiconductor integrated circuit is configured as described above, and when performing a burn-in test, a constant temperature bath having a test signal generator is used. In this case, there is a problem that the burn-in test of many semiconductor integrated circuits is limited within the volume of the constant temperature oven. In addition, different input signal patterns must be created for each product type, and there is a problem that the input signal patterns that can be generated by the test signal generation circuit are limited. In addition, one packaged semiconductor integrated circuit occupies a large volume, and the package shape of the semiconductor integrated circuit is different for each product type, and it is necessary to provide a burn-in test dedicated substrate for each product type in the constant temperature bath. When the burn-in test is performed and other varieties are not tested, there is also a problem that the efficiency of use of the constant temperature bath is poor.

この発明は、上記のような問題点を解決するためになさ
れたもので、ウエハ状態のままでテストを行なうことが
できる回路構成を有する半導体集積回路を得ることを目
的する。
The present invention has been made to solve the above problems, and an object of the present invention is to obtain a semiconductor integrated circuit having a circuit configuration capable of performing a test in a wafer state.

〔課題を解決するための手段〕[Means for Solving the Problems]

この発明に係る半導体集積回路は、入力部と、出力部
と、電源電圧入力部を有し、前記電源電圧入力部に電源
電圧が印加されると動作し、前記入力部への信号に応じ
た信号を前記出力部より出力する主回路を有する半導体
集積回路であって、前記入力部に接続された入力パッド
と、前記出力部に接続された出力パッドと、前記主回路
の電源電圧入力部に接続された第1の電源電圧供給端子
と、前記主回路の電源電圧入力部に接続された第2の電
源電圧供給端子と、前記第2の電源電圧供給端子と前記
主回路の電源電圧入力部との信号経路間に設けられ、前
記第2の電源電圧供給端子への電源電圧に応答して導通
する第1のスイッチング手段と、前記第2の電源電圧供
給端子に接続され、前記第2の電源電圧供給端子への電
源電圧に応答し、あらかじめ定められたテスト用信号を
前記主回路の入力部に与える信号発生手段と、前記信号
発生手段と前記主回路の入力部との信号経路上に設けら
れ、前記第2の電源電圧供給端子への電源電圧に応答し
て導通状態となる第2のスイッチング手段とを設けた構
成としている。
A semiconductor integrated circuit according to the present invention has an input unit, an output unit, and a power supply voltage input unit, operates when a power supply voltage is applied to the power supply voltage input unit, and responds to a signal to the input unit. A semiconductor integrated circuit having a main circuit for outputting a signal from the output section, wherein an input pad connected to the input section, an output pad connected to the output section, and a power supply voltage input section of the main circuit. A connected first power supply voltage supply terminal, a second power supply voltage supply terminal connected to the power supply voltage input section of the main circuit, a second power supply voltage supply terminal and a power supply voltage input section of the main circuit And a second switching means which is provided between the signal path of the second power supply voltage supply terminal and the second switching means and which conducts in response to the power supply voltage to the second power supply voltage supply terminal. In response to the power supply voltage to the power supply voltage supply terminal, The second power source voltage supply terminal is provided on the signal path between the signal generating means for applying a predetermined test signal to the input section of the main circuit, and the signal generating means and the input section of the main circuit. And a second switching means which becomes conductive in response to the power supply voltage to the.

〔作用〕 この発明における第1のスイッチング手段は、第2の電
源電圧供給端子への電源電圧に応答し導通し主回路に電
源電圧を供給する。第2の電源電圧供給端子への電源電
圧に応答し、信号発生手段は信号を発生するとともに第
2のスイッチング手段は導通状態となり、主回路の入力
部には信号発生手段からの信号が入力される。主回路は
この信号に応じた信号を出力部より出力パッドへ出力す
る。
[Operation] The first switching means in the present invention responds to the power supply voltage to the second power supply voltage supply terminal and becomes conductive to supply the power supply voltage to the main circuit. In response to the power supply voltage to the second power supply voltage supply terminal, the signal generating means generates a signal, the second switching means becomes conductive, and the signal from the signal generating means is input to the input part of the main circuit. It The main circuit outputs a signal corresponding to this signal from the output section to the output pad.

〔実施例〕〔Example〕

第1図はこの発明の一実施例を示す構成図である。図に
おいて、1はウエハ状態の主回路である。信号発生回路
5はバーンインテスト時にテスト信号をスリーステート
バッファ6に与える。スリーステートバッファ6はバー
ンインテスト時にテスト信号を主回路1の入力部7に入
力する。入力部7は従来と同様に入力パット2に接続さ
れている。また主回路1の出力部3aは出力パット3に接
続されている。信号発生回路5は、テスト用電源電圧供
給端子8に接続されておりテスト用電源電圧供給端子8
からの電源電圧に応答しテスト信号を発生する。スリー
ステートバッファ6のコントロール端子はテスト用電源
電圧供給端子8に接続されるとともに、プルダウン抵抗
Rを介し接地されている。プルダウン抵抗Rは、テスト
電源電圧供給端子8に電源電圧が印加されない場合、ス
リーステートバッファ6のコントロール端子をロウに強
制し、スリーステートバッファ6をフローティング状態
に保つ。なお、図示していないが、スリーステートバッ
ファ6の電源端子は電源供給端子4に直続接続されてい
る。
FIG. 1 is a block diagram showing an embodiment of the present invention. In the figure, 1 is a main circuit in a wafer state. The signal generation circuit 5 gives a test signal to the three-state buffer 6 during the burn-in test. The three-state buffer 6 inputs a test signal to the input section 7 of the main circuit 1 during the burn-in test. The input section 7 is connected to the input pad 2 as in the conventional case. The output section 3a of the main circuit 1 is connected to the output pad 3. The signal generation circuit 5 is connected to the test power supply voltage supply terminal 8 and is connected to the test power supply voltage supply terminal 8.
Generates a test signal in response to the power supply voltage from. The control terminal of the three-state buffer 6 is connected to the test power supply voltage supply terminal 8 and is also grounded via the pull-down resistor R. When the power supply voltage is not applied to the test power supply voltage supply terminal 8, the pull-down resistor R forces the control terminal of the three-state buffer 6 to low and keeps the three-state buffer 6 in a floating state. Although not shown, the power supply terminal of the three-state buffer 6 is directly connected to the power supply terminal 4.

9は、NチャネルMOSトランジスタにより構成され、主
電源電圧供給端子4とテスト用電源電圧供給端子8の間
に接続されたスイッチである。スイッチ9は、テスト用
電源電圧供給端子8にのみ電源電圧を印加すると導通
し、信号発生回路5及びスリーステートバッファ6だけ
でなく、主回路1にも電源電圧を供給する。スイッチ9
は逆に、主電源電圧供給端子4にのみ電源電圧を印加す
ると非導通状態になり、主回路1にのみ電源電圧を供給
し、信号発生回路5及びスリーステートバッファ6には
電源電圧を供給しない。
Reference numeral 9 denotes a switch composed of an N-channel MOS transistor and connected between the main power supply voltage supply terminal 4 and the test power supply voltage supply terminal 8. The switch 9 conducts when a power supply voltage is applied only to the test power supply voltage supply terminal 8, and supplies the power supply voltage not only to the signal generating circuit 5 and the three-state buffer 6 but also to the main circuit 1. Switch 9
On the contrary, when the power supply voltage is applied only to the main power supply voltage supply terminal 4, it becomes non-conducting state, the power supply voltage is supplied only to the main circuit 1, and the power supply voltage is not supplied to the signal generating circuit 5 and the three-state buffer 6. .

次に主回路1のバーンインテストを行う動作について説
明する。この場合、ウエハ状態である主回路1を恒温槽
内で所定の温度に保つ。バーンインテスト時は、テスト
用電源電圧供給端子8にのみ電圧を供給する。すると、
スイッチ9は導通し、主回路1にテスト用電源電圧供給
端子8より電源電圧が供給され、主回路1は動作する。
また、テスト用電源電圧供給端子8より信号発生回路5
及びスリーステートバッファ6のコントロール端子にも
電源電圧が供給される。そのため、信号発生回路5はテ
スト信号を発生し、またスリーステートバッファ6は導
通状態となるので主回路1の入力部7にはテスト信号が
入力される。前述のように主回路1は動作状態であり、
主回路1は信号発生回路5からのテスト信号を受け、こ
のテスト信号に応じた信号を出力する。この出力信号を
測定し、規格内か否かを判定し、主回路1のバーンイン
テストを行う。
Next, the operation of performing the burn-in test of the main circuit 1 will be described. In this case, the main circuit 1 in the wafer state is kept at a predetermined temperature in the constant temperature bath. During the burn-in test, the voltage is supplied only to the test power supply voltage supply terminal 8. Then,
The switch 9 becomes conductive, the power supply voltage is supplied to the main circuit 1 from the test power supply voltage supply terminal 8, and the main circuit 1 operates.
Further, the signal generating circuit 5 is supplied from the test power supply voltage supply terminal 8.
The power supply voltage is also supplied to the control terminal of the three-state buffer 6. Therefore, the signal generating circuit 5 generates a test signal, and the three-state buffer 6 becomes conductive, so that the test signal is input to the input section 7 of the main circuit 1. As described above, the main circuit 1 is in the operating state,
The main circuit 1 receives the test signal from the signal generating circuit 5 and outputs a signal according to this test signal. This output signal is measured to determine whether it is within specifications, and a burn-in test of the main circuit 1 is performed.

パッケージ後の半導体集積回路の通常動作時は、外部接
続ピンから主電源電圧供給端子4にのみ電源電圧を供給
する。(この場合、テスト用電源電圧供給端子8は外部
接続ピンに接続する必要はない。)するとスイッチ9は
非導通状態となり、信号発生回路5及びスリーステート
バッファ6のコントロール端子には電源電圧は供給され
ない。その結果、信号発生回路5はテスト信号を発生せ
ず、スリーステートバッファ6はプルダウン抵抗Rによ
りフローティング状態となる。従って、主回路1の入力
部7にはスリーステートバッファ6からは何らの信号も
入力されず、入力パッド2への信号に応じ主回路1は通
常動作を行う。
During normal operation of the semiconductor integrated circuit after packaging, the power supply voltage is supplied only from the external connection pin to the main power supply voltage supply terminal 4. (In this case, the test power supply voltage supply terminal 8 does not need to be connected to the external connection pin.) Then, the switch 9 becomes non-conductive, and the power supply voltage is supplied to the control terminals of the signal generating circuit 5 and the three-state buffer 6. Not done. As a result, the signal generating circuit 5 does not generate a test signal, and the three-state buffer 6 is brought into a floating state by the pull-down resistor R. Therefore, no signal is input to the input section 7 of the main circuit 1 from the three-state buffer 6, and the main circuit 1 normally operates according to the signal to the input pad 2.

なお、上記実施例では、ウエハ状態の主回路1のバーン
インテストの場合について説明したが、パッケージ後に
バーンインテストする場合にも適用でき、上記実施例と
同様の効果が得られる。この場合、主電源電圧供給端子
4及びテスト用電源電圧供給端子8を外部接続ピンに取
り出し、これらの端子に電源電圧を供給すればよい。
In the above-mentioned embodiment, the case of the burn-in test of the main circuit 1 in the wafer state has been described, but it can be applied to the case of performing the burn-in test after packaging, and the same effect as that of the above-mentioned embodiment can be obtained. In this case, the main power supply voltage supply terminal 4 and the test power supply voltage supply terminal 8 may be taken out to the external connection pins and the power supply voltage may be supplied to these terminals.

また、上記実施例ではバーンインテストの場合について
説明したが、信号発生回路を用いて半導体集積回路のテ
ストを行う場合について広く適用され、バーンインテス
トには限定されない。
Further, although the case of the burn-in test has been described in the above embodiment, it is widely applied to the case of performing the test of the semiconductor integrated circuit using the signal generating circuit, and is not limited to the burn-in test.

さらに、上記実施例では、スイッチ9がNチャネルMOS
トランジスタで構成されている場合について説明した
が、テスト用電源電圧供給端子8に電源電圧が供給され
た場合のみ導通するスイッチであれはばいかなるもので
あってもよい。
Further, in the above embodiment, the switch 9 is an N channel MOS.
Although the case where the switch is configured by the transistor has been described, any switch may be used as long as the switch is conductive only when the power supply voltage for test 8 is supplied with the power supply voltage.

〔発明の効果〕〔The invention's effect〕

以上のように、この発明によれば、第2の電源電圧供給
端子と主回路の電源電圧入力部との信号経路間に設けら
れ、第2の電源電圧供給端子への電源電圧に応答して導
通する第1のスイッチング手段と、第2の電源電圧供給
端子に接続され、前記第2の電源電圧供給端子への電源
電圧に応答し、あらかじめ定められたテスト用信号を主
回路の入力部に与える信号発生手段と、信号発生手段と
主回路の入力部との信号経路間に設けられ、第2の電源
電圧供給端子への電源電圧に応答し導通状態となる第2
のスイッチング手段とを設けたので、半導体集積回路の
試験を行う場合半導体集積回路外部に信号発生装置を設
ける必要がなく、半導体集積回路外部からの信号線の引
き回しが、不要となるとともに、ウエハ状態で主回路の
テストを行うことができるという効果がある。
As described above, according to the present invention, it is provided between the signal paths of the second power supply voltage supply terminal and the power supply voltage input section of the main circuit, and responds to the power supply voltage to the second power supply voltage supply terminal. It is connected to the first switching means that conducts and the second power supply voltage supply terminal, and responds to the power supply voltage to the second power supply voltage supply terminal, and outputs a predetermined test signal to the input section of the main circuit. A second signal generating means, which is provided between the signal generating means and the signal path between the signal generating means and the input section of the main circuit, and which becomes conductive in response to the power supply voltage to the second power supply voltage supply terminal.
Since the switching means is provided, it is not necessary to provide a signal generator outside the semiconductor integrated circuit when testing the semiconductor integrated circuit, and the wiring of the signal line from outside the semiconductor integrated circuit is not necessary and the wafer state There is an effect that the main circuit can be tested with.

【図面の簡単な説明】[Brief description of drawings]

第1図はこの発明の一実施例を示すブロック図、第2図
は従来の半導体集積回路を示すブロック図である。 図において、1は主回路、2は入力パッド、3は出力パ
ッド、3aは出力部、4は主電源電圧供給端子、5は信号
発生回路、6はスリーステートバッファ、7は入力部、
8はテスト用電源電圧供給端子、9はスイッチである。 なお、各図中同一符号は同一または相当部分を示す。
FIG. 1 is a block diagram showing an embodiment of the present invention, and FIG. 2 is a block diagram showing a conventional semiconductor integrated circuit. In the figure, 1 is a main circuit, 2 is an input pad, 3 is an output pad, 3a is an output section, 4 is a main power supply voltage supply terminal, 5 is a signal generation circuit, 6 is a three-state buffer, 7 is an input section,
Reference numeral 8 is a test power supply voltage supply terminal, and 9 is a switch. In the drawings, the same reference numerals indicate the same or corresponding parts.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H01L 27/04 // G01R 31/26 H ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Office reference number FI technical display area H01L 27/04 // G01R 31/26 H

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】入力部と、出力部と、電源電圧入力部を有
し、前記電源電圧入力部に電源電圧が印加されると動作
し、前記入力部への信号に応じた信号を前記出力部より
出力する主回路を有する半導体集積回路であって、 前記入力部に接続された入力パッドと、 前記出力部に接続された出力パッドと、 前記主回路の電源電圧入力部に接続された第1の電源電
圧供給端子と、 前記主回路の電源電圧入力部に接続された第2の電源電
圧供給端子と、 前記第2の電源電圧供給端子と前記主回路の電源電圧入
力部との信号経路間に設けられ、前記第2の電源電圧供
給端子への電源電圧に応答して導通する第1のスイッチ
ング手段と、 前記第2の電源電圧供給端子に接続され、前記第2の電
源電圧供給端子への電源電圧に応答し、あらかじめ定め
られたテスト用信号を前記主回路の入力部に与える信号
発生手段と、 前記信号発生手段と前記主回路の入力部との信号経路間
に設けられ、前記第2の電源電圧供給端子への電源電圧
に応答して導通状態となる第2のスイッチング手段とを
設けたことを特徴とする半導体集積回路。
1. An input unit, an output unit, and a power supply voltage input unit, which operate when a power supply voltage is applied to the power supply voltage input unit and output a signal corresponding to a signal to the input unit. A semiconductor integrated circuit having a main circuit for outputting from an input section, the input pad connected to the input section, the output pad connected to the output section, and the first connected to the power supply voltage input section of the main circuit. No. 1 power supply voltage supply terminal, a second power supply voltage supply terminal connected to the power supply voltage input section of the main circuit, and a signal path between the second power supply voltage supply terminal and the power supply voltage input section of the main circuit First switching means provided between the first power supply voltage supply terminal and the second switching means for conducting in response to the power supply voltage to the second power supply voltage supply terminal; and the second power supply voltage supply terminal connected to the second power supply voltage supply terminal. Responsive to the power supply voltage to the predetermined A signal generating means for supplying a test signal to the input section of the main circuit, and a power supply voltage to the second power supply voltage supply terminal, which is provided between the signal generating means and the signal path between the input section of the main circuit. A semiconductor integrated circuit comprising: a second switching means which responds to turn on.
JP63117370A 1988-05-13 1988-05-13 Semiconductor integrated circuit Expired - Fee Related JPH0727012B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63117370A JPH0727012B2 (en) 1988-05-13 1988-05-13 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63117370A JPH0727012B2 (en) 1988-05-13 1988-05-13 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPH01287487A JPH01287487A (en) 1989-11-20
JPH0727012B2 true JPH0727012B2 (en) 1995-03-29

Family

ID=14709979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63117370A Expired - Fee Related JPH0727012B2 (en) 1988-05-13 1988-05-13 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPH0727012B2 (en)

Also Published As

Publication number Publication date
JPH01287487A (en) 1989-11-20

Similar Documents

Publication Publication Date Title
US5313158A (en) Test system integrated on a substrate and a method for using such a test system
KR100223077B1 (en) Integrated Circuit Tester
JPH08304515A (en) Semiconductor memory device capable of DC voltage test in package state
US5164665A (en) IC tester
JP2000243795A (en) Power supply current measurement circuit of burn-in tester
US6744271B2 (en) Internal generation of reference voltage
JPH0727012B2 (en) Semiconductor integrated circuit
CN101111776A (en) Semiconductor integrated circuits and system LSIs
US5206862A (en) Method and apparatus for locally deriving test signals from previous response signals
JP3130769B2 (en) Semiconductor device
US20030115519A1 (en) Parallel testing system for semiconductor memory devices
JP3161357B2 (en) Semiconductor integrated circuit device
JP3442226B2 (en) Integrated circuit with delay evaluation circuit
JP3207639B2 (en) Semiconductor integrated circuit
JP2773709B2 (en) Semiconductor device test method and test apparatus
JPH01129432A (en) Integrated circuit
JP2833537B2 (en) Integrated circuit test equipment
JPH11183548A (en) Ic connection testing method
JP2002090414A (en) Semiconductor testing device
KR100194203B1 (en) Output stage pad control circuit of semiconductor logic IC
JPH0989991A (en) Integrated circuit testing device
JP2900847B2 (en) Integrated circuit test equipment
JP3132635B2 (en) Test method for semiconductor integrated circuit
KR100327333B1 (en) Test Equipment for Testing Integrated Circuit Device Having a Plurality of Power Pins
KR19990039586A (en) How to test memory devices with reduced number of test pads

Legal Events

Date Code Title Description
S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees