JPH0731288B2 - Method of forming optical element - Google Patents
Method of forming optical elementInfo
- Publication number
- JPH0731288B2 JPH0731288B2 JP61136552A JP13655286A JPH0731288B2 JP H0731288 B2 JPH0731288 B2 JP H0731288B2 JP 61136552 A JP61136552 A JP 61136552A JP 13655286 A JP13655286 A JP 13655286A JP H0731288 B2 JPH0731288 B2 JP H0731288B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- optical element
- forming
- acid
- linbo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Description
【発明の詳細な説明】 産業上の利用分野 本発明はコヒーレント光を使用する光情報処理分野ある
いは光通信,光応用計測制御分野に使用される光導波路
およびマイクロレンズなどに用いる光素子の形成方法に
関するものである。TECHNICAL FIELD The present invention relates to a method for forming an optical element used for an optical waveguide and a microlens used in the field of optical information processing using coherent light, or in the fields of optical communication and optical application measurement control. It is about.
従来の技術 従来、強誘電体であるLiNbO3基板を160℃〜250℃程度の
安息香酸溶液中で熱処理を行いLiNbO3基板のLiと安息香
酸中のHを交換させ高屈折率層(最大屈折率差Δn=0.
13程度)を形成し光導波路としていた。「ジュー・エル
・ジャッケル,シー・イー・ライス及びジェー・ジュー
・ベセルカ“プロトン イクスチェンジ フォー ハイ
−インデックス ウェイブガイド インLiNbO3"アプラ
イド フィジクス レター,41巻,7号607−608頁(198
2)(J.L.Jackel,C.E,Rice and J.J.Veselka,“Proton
exchange for high−index weveguides in LiNbO3,"App
l.Phys.Lett,Vol41,No.7.PP607−608(1982))」参
照。以下光素子として光導波路を例にとりその形成方法
について説明する。第5図に従来の溶液中でのプロトン
交換方法を用いた光導波路形成法の具体的構成図を示
す。1は強誘電体基板であるLiNbO3基板、2′はAlによ
る保護マスク、4はフォトプロセスおよびエッチングに
より保護マスク2′上に形成されたスリットである。上
記保護マスク2′,スリット4が形成されたLiNbO3基板
1を安息香酸の溶液5′中に浸す。溶液5′はヒータ9
により加熱されたビーカ10を介して一定温度200℃に保
たれている。この溶液5′中でLiNbO3基板1を60分熱処
理を行った後、メタノールにより洗浄を行う。こうして
安息香酸溶液5′中のHとLiNbO3基板1中のLiが交換し
高屈折率層8が形成される。この高屈折率層8が厚み0.
5μm程度の光導波路となる。Conventional technology Conventionally, a LiNbO 3 substrate, which is a ferroelectric material, is heat-treated in a benzoic acid solution at about 160 ° C to 250 ° C to exchange Li of the LiNbO 3 substrate with H in benzoic acid, and thus a high refractive index layer Rate difference Δn = 0.
13) was formed as an optical waveguide. "Ju-El-Jackel, CIE Rice and J-Ju Beselka" Proton Exchange for High-Index Waveguide in LiNbO 3 "Applied Physics Letters, Vol. 41, No. 7, pp. 607-608 (198).
2) (JLJackel, CE, Rice and JJVeselka, “Proton
exchange for high−index weveguides in LiNbO 3 , "App
L. Phys. Lett, Vol 41, No. 7, PP 607-608 (1982)) ". An optical waveguide will be taken as an example of the optical element, and a method of forming the optical waveguide will be described below. FIG. 5 shows a concrete configuration diagram of an optical waveguide forming method using a conventional proton exchange method in a solution. 1 is a LiNbO 3 substrate which is a ferroelectric substrate, 2'is a protective mask made of Al, and 4 is a slit formed on the protective mask 2'by a photo process and etching. The LiNbO 3 substrate 1 on which the protective mask 2 ′ and the slit 4 are formed is dipped in a benzoic acid solution 5 ′. Solution 5'is heater 9
A constant temperature of 200 ° C. is maintained through the beaker 10 heated by. The LiNbO 3 substrate 1 is heat-treated in this solution 5 ′ for 60 minutes and then washed with methanol. In this way, H in the benzoic acid solution 5'is exchanged with Li in the LiNbO 3 substrate 1 to form the high refractive index layer 8. This high refractive index layer 8 has a thickness of 0.
It becomes an optical waveguide of about 5 μm.
発明が解決しようとする問題点 上記のような溶液中での光素子の形成方法は以下に示す
ような問題点を有していた。(1) 溶液が発生する蒸
気のため作業性が悪くなる。(2) 溶液の温度を均一
化するため撹拌などの作業が必要となる。(3) 基板
を出入する際に急激な温度変化のため割れが生じ易い。
(4) プロトン交換したい面以外も溶液に浸されるた
めプロント交換される。(5) サンプルホルダごと溶
液中に浸すので溶液の寿が短く大量に使用せねばならな
い。Problems to be Solved by the Invention The method for forming an optical element in a solution as described above has the following problems. (1) Workability deteriorates due to the vapor generated by the solution. (2) Work such as stirring is required to make the temperature of the solution uniform. (3) Cracks are likely to occur when a substrate is moved in and out due to a rapid temperature change.
(4) The surface other than the surface to be proton-exchanged is immersed in the solution, so that the proton is exchanged. (5) Since the whole sample holder is immersed in the solution, the life of the solution is short and a large amount of it must be used.
問題点を解決するための手段 本発明は上記問題点を解消するもので、光素子の形成方
法に新たな工夫を加えることにより作業性,制御性,量
産性を大幅に向上させたものである。すなわち、本発明
の光素子の形成方法は、LiNbxTa(1-x)O3(0≦x≦1)
基板の表面に、ピロ燐酸を主成分とする酸を塗布する工
程と、前記基板を熱処理し、前記塗布した酸の直下の前
記基板に、高屈折率部を形成する工程とを有するもので
ある。Means for Solving the Problems The present invention solves the above-mentioned problems, and improves workability, controllability, and mass productivity significantly by adding a new device to the method for forming an optical element. . That is, the method of forming the optical element of the present invention, LiNbxTa (1- x) O 3 (0 ≦ x ≦ 1)
It comprises a step of applying an acid containing pyrophosphoric acid as a main component to the surface of the substrate, and a step of heat-treating the substrate to form a high refractive index portion on the substrate immediately below the applied acid. .
作用 本発明は上記手段により通常の拡散,アニールなどと同
様のプロセスでプロトン交換が行え作業性,制御性,量
産性が大幅に向上する。Action The present invention allows proton exchange by the above-mentioned means in the same process as ordinary diffusion, annealing, etc., and greatly improves workability, controllability, and mass productivity.
実 施 例 本発明の光素子の形成方法の第1の実施例を第1図に示
す。この第1の実施例では光素子の形成法としてLiNbO3
基板上にピロ燐酸(H4P2O7)を塗布し光導波路を形成す
る方法について説明する。第1図aで1は+Z板(+Z
軸に垂直に切り出された基板)のLiNbO3基板、2はLiNb
O3基板1+Z面3上に形成されたTaによる保護マスクで
ある。保護マスク2の厚みは300Åである。4はフォト
プロセスおよびリフトオフプロセスにより保護マスク2
に形成されたスリットである。まず、同図bのように純
度95%のピロ燐酸5をスピンナーを用いてLiNbO3基板1
の+Z面3上に塗布を行った。具体的には回転数300rpm
で20秒スピンコートを行った。純度95%のピロ燐酸5は
室温で液体でありスピンコートなどの表面塗布が可能で
ある。Example 1 A first example of the method for forming an optical element of the present invention is shown in FIG. In the first embodiment, LiNbO 3 is used as a method for forming an optical element.
A method for forming an optical waveguide by coating pyrophosphoric acid (H 4 P 2 O 7 ) on a substrate will be described. In FIG. 1a, 1 is a + Z plate (+ Z
Substrate cut out perpendicular to the axis) LiNbO 3 substrate, 2 is LiNb
It is a protective mask of Ta formed on the O 3 substrate 1 + Z surface 3. The thickness of the protective mask 2 is 300Å. 4 is a protective mask 2 by photo process and lift-off process
It is a slit formed in. First, as shown in FIG. 3B, pyrophosphoric acid 5 having a purity of 95% is used on a LiNbO 3 substrate 1 using a spinner.
The coating was performed on the + Z surface 3 of. Specifically, the rotation speed is 300 rpm
It was spin coated for 20 seconds. Pyrophosphoric acid 5 having a purity of 95% is a liquid at room temperature, and surface coating such as spin coating is possible.
次に同図cのように200℃に加熱されたオーブン6中で6
0分間熱処理を行った。7は温度の均一化を図るためのA
lで作られたプレートである。最後にプレート7ごとオ
ーブン6より取り出し冷却を行った後水酸化ナトリウム
系の溶液でTaによる保護マスク2を除去したのが同図d
である。スリット4の直下にプロトン交換により高屈折
率層8が形成された。この高屈折率層8の厚みは0.5μ
mであり光導波路として機能している。なおピロ燐酸に
より形成した高屈折率層8のLiNbO3基板1との最大屈折
率差Δnは0.145と安息香酸の溶液処理に比べて高くよ
り光の閉じ込めの大きな光導波路の作製が可能となる。
ところでピロ燐酸5は安息香酸などに比べて極端に蒸発
量が少いことおよび一度の光素子作製に使用する量が非
常に少いことのため安全面および溶液の交換オーブンな
どの手入れなどの保守面を考えた場合、作業性が飛躍的
に向上する。Next, as shown in Fig. 6c, 6 in an oven 6 heated to 200 ° C.
Heat treatment was performed for 0 minutes. 7 is A for equalizing the temperature
It is a plate made of l. Finally, the plate 7 is taken out from the oven 6 and cooled, and then the protective mask 2 made of Ta is removed with a sodium hydroxide-based solution.
Is. The high refractive index layer 8 was formed immediately below the slit 4 by proton exchange. The thickness of the high refractive index layer 8 is 0.5 μ
m, which functions as an optical waveguide. The maximum refractive index difference Δn between the high refractive index layer 8 formed of pyrophosphoric acid and the LiNbO 3 substrate 1 is 0.145, which is higher than that in the solution treatment of benzoic acid, and it is possible to manufacture an optical waveguide having a larger light confinement.
By the way, since pyrophosphoric acid 5 has an extremely small amount of evaporation compared to benzoic acid, etc., and the amount used for making an optical element at one time is very small, safety and maintenance such as maintenance of a solution exchange oven are performed. Considering the aspect, workability is dramatically improved.
また本方法はLiNbO3基板1の割れ防止のためのプレアニ
ール工程および装置を必要としないことも特徴の1つで
ある。Another feature of this method is that it does not require a pre-annealing step and a device for preventing cracking of the LiNbO 3 substrate 1.
またTaはピロ燐酸5などの燐酸系にエッチングされない
保護マスクとして使用できる上パターン形成も簡単で有
効と思われる。Further, Ta can be used as a protective mask which is not etched by phosphoric acid such as pyrophosphoric acid 5 and the pattern formation seems to be simple and effective.
本発明の光素子の形成方法の第2の実施例について説明
する。第2の実施例では光素子としてマイクロレンズを
形成する方法を示している。第2図はマイクロレンズ形
成方法の斜視図である。1はLiNbO3基板5は1mgのピロ
燐酸である。ピロ燐酸5は表面張力により広がらずに一
定の大きさを保っている。260℃,6時間石英管中でプロ
トン交換を行うことにより液が徐々に広がり、第3図の
ような中央に凸な高屈折率層8が形成される。この高屈
折率層8がマイクロレンズとなる。A second embodiment of the optical element forming method of the present invention will be described. The second embodiment shows a method of forming a microlens as an optical element. FIG. 2 is a perspective view of a microlens forming method. 1 is LiNbO 3 substrate 5 is 1 mg of pyrophosphoric acid. Pyrophosphoric acid 5 does not spread due to surface tension and maintains a constant size. By performing proton exchange in a quartz tube at 260 ° C. for 6 hours, the liquid gradually spreads, and a high refractive index layer 8 having a convex shape at the center as shown in FIG. 3 is formed. This high refractive index layer 8 becomes a microlens.
以上のように本方法を用いると安息香酸では実現不可能
な260℃以上の温度でもプロトン交換が行え拡散定数を
大きくできプロセス時間の短縮が図れる。また所望の部
分だけに塗布可能であり保護マスク作製工程が省略でき
る。As described above, when this method is used, proton exchange can be performed even at a temperature of 260 ° C or higher, which cannot be realized with benzoic acid, the diffusion constant can be increased, and the process time can be shortened. Further, the protective mask can be applied only to a desired portion, and the protective mask manufacturing process can be omitted.
本発明の光素子の形成方法の第3の実施例についてLiTa
O3基板1′上に光導波路を形成する場合について説明す
る。第4図は上記光素子の形成方法の断面図である。
1′はLiTaO3基板、2はLiTaO3基板1′の−Z面3′上
に形成されたTaによる保護マスクである。4はフォトプ
ロセスおよびリフトオフプロセスにより保護マスク2上
に形成されたスリットである。LiTaO3基板1′を70℃に
加熱し純度100%のピロ燐酸5を注射器により塗布を行
った。次に280℃に加熱されたオーブン中で10時間熱処
理を行った。最後に保護マスクを徐去した。このように
してスリット4の直下にプロトン交換により前記実施例
と同様の高屈折率層(Δn=0.1)が形成された。この
高屈折率層が光導波路となる。Regarding the third embodiment of the method for forming an optical element of the present invention, LiTa
The case of forming an optical waveguide on the O 3 substrate 1'will be described. FIG. 4 is a sectional view of the method for forming the optical element.
1 'is LiTaO 3 substrate, 2 is LiTaO 3 substrate 1' is a protective mask of Ta formed on the -Z surface 3 'of. Reference numeral 4 is a slit formed on the protective mask 2 by a photo process and a lift-off process. The LiTaO 3 substrate 1 ′ was heated to 70 ° C. and 100% pure pyrophosphoric acid 5 was applied by a syringe. Next, heat treatment was performed for 10 hours in an oven heated to 280 ° C. Finally, the protective mask was gradually removed. In this way, a high-refractive index layer (Δn = 0.1) similar to that in the above-mentioned example was formed by means of proton exchange immediately below the slit 4. This high refractive index layer serves as an optical waveguide.
以上のように本発明は高温処理が容易なためLiTaO3基板
1′にも光導波路形成が可能となる。As described above, according to the present invention, since the high temperature treatment is easy, the optical waveguide can be formed on the LiTaO 3 substrate 1 '.
なお実施例では200℃以上で熱処理を行ったが、時間を
かければ100℃以上でも光素子の形成は可能である。ま
た90℃以上での塗布は作業上難しく90℃以下で塗布を行
うことが望ましい。また、+Z板に光素子を形成したが
−Z板などでも化学損傷が無く良質の光素子の形成が可
能である。特に、+Z板又は−Z板を用いると、他のX
又はY板等に比べて、酸による表面の荒れ(化学損傷)
が少なく好ましい。Although heat treatment was performed at 200 ° C. or higher in the examples, an optical element can be formed at 100 ° C. or higher if it takes time. Also, coating at 90 ° C or higher is difficult in terms of work, and it is desirable to coat at 90 ° C or lower. Further, although the optical element is formed on the + Z plate, a high-quality optical element can be formed even on a -Z plate without chemical damage. In particular, when a + Z plate or a -Z plate is used, other X
Or surface roughening due to acid (chemical damage) compared to Y plate
Is preferable because it is less.
発明の効果 以上のように、本発明の光素子の形成方法によれば、Li
NbxTa(1-x)O(0≦x≦1)基板表面に、ピロ燐酸を主
成分とする酸を塗布し、この基板を熱処理することで、
酸を塗布した領域の直下に高屈折率部を形成できるの
で、簡単に制御性良く光素子を作成することができる。
また通常の半導体プロセスで用いる拡散およびアニール
などと同様の熱処理によりプロトン交換が行えるので作
業性、量産性が大幅に向上する。Effects of the Invention As described above, according to the method for forming an optical element of the present invention, Li
NbxTa (1- x ) O (0 ≤ x ≤ 1) The surface of the substrate is coated with an acid containing pyrophosphoric acid as a main component, and the substrate is heat-treated.
Since the high-refractive-index portion can be formed immediately below the acid-coated region, the optical element can be easily manufactured with good controllability.
In addition, since proton exchange can be performed by the same heat treatment as diffusion and annealing used in a normal semiconductor process, workability and mass productivity are greatly improved.
第1図は本発明の第1の実施例における光素子の形成方
法の工程図、第2図は同第2の実施例方法を説明するた
めの斜視図、第3図は同第2の実施例方法を説明するた
めの断面図、第4図は同第3の実施例方法を説明するた
めの断面図、第5図は従来の光素子の形成方法を説明す
るための構成図である。 1……LiNbO3基板、2……保護マスク、3……+Z面、
4……スリット、5……ピロ燐酸、8……高屈折率層。FIG. 1 is a process diagram of a method for forming an optical element in a first embodiment of the present invention, FIG. 2 is a perspective view for explaining the method of the second embodiment, and FIG. 3 is a second embodiment. FIG. 4 is a sectional view for explaining an example method, FIG. 4 is a sectional view for explaining the method of the third embodiment, and FIG. 5 is a configuration diagram for explaining a conventional optical element forming method. 1 …… LiNbO 3 substrate, 2 …… Protective mask, 3 …… + Z surface,
4 ... Slit, 5 ... Pyrophosphoric acid, 8 ... High refractive index layer.
Claims (3)
に、ピロ燐酸を主成分とする酸を塗布する工程と、 前記基板を熱処理し、前記塗布した酸の直下の前記基板
に、高屈折率部を形成する工程と を有する光素子の形成方法。1. A step of applying an acid containing pyrophosphoric acid as a main component on the surface of a LiNbxTa (1- x ) O 3 (0 ≦ x ≦ 1) substrate, and heat treating the substrate to remove the applied acid. And a step of forming a high refractive index portion on the substrate immediately below.
板または−z板である特許請求の範囲第1項記載の光素
子の形成方法。2. A LiNbxTa (1- x ) O 3 (0 ≦ x ≦ 1) substrate is + z.
The method for forming an optical element according to claim 1, which is a plate or a -z plate.
に、酸を塗布する工程の前に、 前記基板表面にTaによる保護マスクパターンを形成する
工程を有する 特許請求の範囲第1項記載の光素子の形成方法。3. A step of forming a protective mask pattern of Ta on the surface of the LiNbxTa (1- x ) O 3 (0 ≦ x ≦ 1) substrate prior to the step of applying an acid to the substrate. The method for forming an optical element according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61136552A JPH0731288B2 (en) | 1986-06-12 | 1986-06-12 | Method of forming optical element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61136552A JPH0731288B2 (en) | 1986-06-12 | 1986-06-12 | Method of forming optical element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62293208A JPS62293208A (en) | 1987-12-19 |
| JPH0731288B2 true JPH0731288B2 (en) | 1995-04-10 |
Family
ID=15177888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61136552A Expired - Fee Related JPH0731288B2 (en) | 1986-06-12 | 1986-06-12 | Method of forming optical element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0731288B2 (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS607403A (en) * | 1983-06-28 | 1985-01-16 | Canon Inc | Forming method of thin film type optical waveguide |
| JPS60133405A (en) * | 1983-12-22 | 1985-07-16 | Canon Inc | Formation of pattern |
| JPS6170541A (en) * | 1984-09-14 | 1986-04-11 | Canon Inc | Thin film optical element and its manufacturing method |
-
1986
- 1986-06-12 JP JP61136552A patent/JPH0731288B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62293208A (en) | 1987-12-19 |
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|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |