JPH0732501B2 - Ion implantation monitoring controller - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to an ion implantation monitoring control device used for monitoring control of an ion implantation device.

[Conventional technology]

FIG. 3 is a block diagram showing an example of the configuration of a conventional mechanical scan type ion implantation apparatus and an ion implantation monitoring control apparatus for monitoring and controlling the mechanical scanning type ion implantation apparatus. The mechanical scan type ion implanter is provided for a large current with an ion current of about 1 mA to 10 mA.

The mechanical scan type ion implanter is roughly divided into an ion source 1 for generating ions, a mass analyzer 3 for selecting a necessary ion species from an ion beam 2 extracted from the ion source 1, and this mass analyzer 3 It is composed of an accelerating tube 4 for accelerating the ion beam 2 emitted from the ion beam 2 and an end station 6 for applying the ion beam 2 emitted from the accelerating tube 4 to the wafer 5 for ion implantation, and the inside of these is a vacuum. . A gas box 7 for supplying a gas to the ion source 1.
An ion source power supply 8 for supplying various voltages and currents and an extraction power supply 9 for extracting the ion beam 2 are connected. An analysis magnet power supply 10 for supplying power to a mass analysis magnet (not shown) is connected to the mass analyzer 3, and an acceleration power supply 11 is connected to the acceleration tube 4.

The ion source 1 is, for example, a hot cathode PIG type attached to a solid oven, has a filament (not shown), an arc electrode (not shown), and a source magnet (not shown). A power supply, an arc power supply, a source magnet power supply, an oven power supply, etc.) 8 supplies power to the filament, the arc electrode, the source magnet, etc., respectively, so that the gas supplied from the gas box 7 to the arc chamber is ionized. Specifically, in the arc chamber, plasma is generated by performing arc discharge using thermionic emission from the filament as a trigger. And, for example, 30KV supplied from the drawer power supply 9
The ion beam 2 is extracted from the slit-shaped ion extraction electrode 1a by the extraction voltage of -40 KV. This ion power source 1 can use not only gas but also solid (As, P, Sb, etc.) as an ion source substance. When using a solid, the solid ion source substance is evaporated in a solid oven. While being guided to the arc chamber, a carrier gas (Ar or the like) is guided from the gas box 7 to the arc chamber to ionize the solid ionic substance.

The gas box 7 is connected to the above-mentioned ion source 1 and has, for example, four gas bottles (for example, Ar, SiF ₄ , BCl ₃ , PCl, etc.) built therein, and is of any type corresponding to the required ion species. Gas is selectively supplied to the ion source 1.

The mass analyzer 3 is fed from the analysis magnet power source 10 to the mass analysis magnet which is deflected by 90 degrees to select a necessary ion species from the ion beam 2 extracted from the ion source 1 and to perform magnetic focusing of the mass analysis magnet. Using the action, the ion beam 2 is narrowed down to the analysis slit 3a and guided to the acceleration tube 4. The reason why the mass spectrometer 3 is necessary is because of the following reasons. Unwanted ions are often mixed in the ions extracted from the ion source 1. For example, when extracting boron ions, BF ₃ gas is used. In this case, unnecessary ions such as F ⁺ , BF ⁺ , and BF ₂ ⁺ are generated in addition to the necessary boron ions, and these unnecessary ions are injected into the wafer 5. This is because if you do this, you will feel sick.

The mass analyzer 3 adjusts the current supplied to the mass analysis magnet so that the necessary boron ions are deflected by 90 degrees in the vacuum chamber to be guided to the analysis slit 3a and enter the accelerating tube 4. Become. On the other hand, unwanted ions are
Since its mass is different from that of boron ions, it hits the side wall of the vacuum chamber of the mass analyzer 3 and is absorbed there, and does not reach the analysis slit 3a.

The accelerating tube 4 has, for example, a structure in which an insulator and a metal electrode are bonded in multiple stages, a constant accelerating voltage is applied to each electrode from a accelerating power source 11 through a resistor (not shown), and the ion beam 2 is described above. The terminal station 6 is accelerated by a voltage obtained by combining the extraction voltage and this acceleration voltage and enters the end station 6. This accelerating voltage is set according to the injection energy.

The end station 6 is a mechanical scan type that moves the disk 12 while keeping the ion beam 2 stationary. The wafer 5 is loaded on the circumference of the disk 12 so that the entire surface of the wafer 5 is uniformly irradiated with the ion beam 2.
The disk 12 is translated by the induction motor 13 and the stepping motor 14 while rotating in the beam region. In this case, the rotation speed of the disk 12 is constant, but the translational movement is performed by changing the implantation dose to the wafer regardless of that the moving speed of the disk 12 is different between the outer peripheral portion and the inner peripheral portion of the disk 12 and the fluctuation of the beam current. 5 Since it is necessary to make it uniform over the entire surface, it is not constant, but it is necessary to control the translation speed according to the above change.

Further, the end station 6 loads the wafer 5 on the disk 12 before the ion implantation, and takes out the wafer 5 from the disk 12 after the implantation is completed. At this time, the wafer 5 is loaded and unloaded through an air lock (not shown) provided in a part of the end station 6, and the vacuum state of the end station 6 and the preceding stage thereof is maintained.

Next, an ion implantation monitoring control device for monitoring and controlling the above mechanical scan type ion implantation device will be described. This ion implantation monitoring controller comprises an end station controller 15, a utility controller 16, an implantation controller 19, an acceleration controller 20, a mass controller 21, an ion source controller 26, an extraction voltage controller 27, a gas select controller 28, etc. There is.

The utility controller 16 controls the vacuum system and monitors the state of the apparatus, and is connected to a vacuum gauge 23, a valve 24, a vacuum pump 25 for the drawing system and the beam line, and other limit switches. And performs sequence control of the valve 24, and also monitors the degree of vacuum and the status of various other utilities.

The ion source controller 26 is a controller for generating plasma in the ion source 1, and is adapted to change the parameters (filament voltage, arc voltage, source magnet current, etc.) of the ion source 1.

The gas select controller 28 selects a gas sample for plasma generation in the ion source 1.

The mass controller 21 adjusts the analysis magnet current given to the mass analyzer 3 so that the ion beam 2 having a desired mass value can be obtained.

Specifically, the analysis magnet current given to the mass analyzer 3 is set according to the mass value, and the extraction voltage controller 27 is set.
The extraction voltage controller 27 extracts the mass value calculated from the extraction voltage set by
To display. At this time, the mass controller 21
The analysis magnet current is controlled so that the beam current is maximized so that necessary ions always reach the analysis magnet 3a.

The acceleration controller 20 sets the acceleration voltage according to the required acceleration energy.

The implantation controller 19 controls the translational motion of the disk 12 via the stepping motor driver 29 based on the data of the control conditions such as the dose amount and the wafer size, so that the entire surface of the wafer 5 is uniformly ion-implanted. In this way, the beam current is digitally converted by the converter 30, the beam current is integrated, and when the integrated value reaches a value determined by the wafer size and the dose amount, the ion implantation is stopped.

The end station controller 15 controls wafer handling. For example, the end station controller 15 controls the vacuum pump 33, the valve 34, and the like based on signals from a vacuum gauge 31 that measures the vacuum degree of an airlock and an optical sensor 32. The end station controller 15, the utility controller 16, and the injection controller 19 are interlocked with each other.

The telemeter 35 transmits / receives data between the ground side and the high voltage section 36, and the ground side unit and the high voltage section side unit are connected by an optical fiber or the like for insulation.

In such a conventional device, the end station controller 15, the utility controller 16, the injection controller 1
9. Accelerator controller 20, mass controller 21, ion source controller 26, extraction voltage controller 28, etc. are provided with operating devices and indicators, that is, operating devices and indicators are distributed and ion implantation is performed by each operating device and display device. Since the device was monitored and controlled, there was a problem that the operability was poor and the device became large.

In order to solve such a problem, an ion implantation monitoring control device as shown in FIG. 4 has already been proposed.

This ion implantation monitoring control device includes a man-machine controller 51, three system control controllers 52, 53 and 54, transmission units 55 to 60, transmission lines 61, 62 and 63, and a central monitoring controller 64. The man-machine controller 51 and the system control controllers 52 to 54 are composed of a transmission section 55 to 60 and a transmission line 61 to.
63, the man-machine controller 51 and the centralized supervisory controller 64 are connected via a centralized supervisory control transmission line 65, and the system control controllers 52 to 54 are provided with various elements constituting an ion implantation apparatus. Equipment (described later) is connected.

The system control controller 54 of the utility system is connected with a measuring device 72 such as a vacuum gauge and various limit switches, a valve 73, a vacuum pump 74 for a drawing system and a beam line, and the like. The system control controller 54 performs sequence control of vacuum pumps and valves of the ion implantation apparatus and state monitoring of power supplies and various utilities. This ion implantation monitoring control device has an automatic mode and a manual mode. In the automatic mode, the sequence control can be performed only by the system control controller 54. In the manual mode, the man-machine controller 51 can control the system control. The ion implanter can be controlled via 54. The state of the ion implanter is placed on the transmission line 63 at an appropriate timing, and the other system control controllers 52, 53 and the man-machine controller 51 read this.

An optical sensor 75 for wafer handling, a vacuum pump 76, a valve 77, a motor 78, etc. are connected to the system controller 53 of the end station system. Wafer handling is controlled by the system control controller 53. In the automatic mode, control can be performed only by the system control controller 53. In this case, the timing is determined based on the information from the system control controller 54. At the time of manual operation, wafer handling can be controlled from the man-machine controller 51 via the system control controller 53. The state of the ion implantation apparatus (for example, wafer processing state) is placed on the transmission line 62 at an appropriate timing, and is read by another controller (mainly the man-machine controller 51).

A telemeter 79, a measuring device 81 such as a vacuum gauge, and the like are connected to the system controller 58 of the beam system. Various power sources 80 such as an ion source power source, an extraction power source, an analysis magnet power source, and an acceleration power source are connected to the telemeter 79. The system control controller 52 reads the data of the measuring instrument, reads the parameters of the power supply, and outputs the signal for controlling the parameters of the power supply. The read data is placed on the transmission line 61 and passed to the man-machine controller 51. Also, the parameter control signal is sent from the man-machine controller 51.

A stepping motor 82 for driving a stepping motor 83 for a wafer disk drive mechanism and a converter 84 for A / D converting the beam current are connected to the system controller 52. The system control controller 61 controls the translation speed of the disk loaded with the wafer based on the beam current.

The man-machine controller 51 includes a CPU (central processing unit), a floppy disk device, and the like, and various control conditions (acceleration) set by a central monitoring controller 64 including a CRT display device and a keyboard. Energy, beam amount, dose amount, ion species, wafer size, etc. are stored, and the data of this control condition is sent to each system control controller 52 to 54, and the monitoring data from the system control controllers 52 to 54 is sent. It is read and sent to the centralized monitoring controller 64 to display various monitoring data.

In addition, the man-machine controller 51 is a central monitoring controller 64.
The operation guidance is displayed on the CRT screen of and the operation is performed using the keys such as the function keys and ten keys in the centralized monitoring controller 64. Further, during automatic operation, control signals for adjustment control such as ion source startup, beam extraction, and beam focusing are placed on the transmission lines 61 to 63 and given to the system control controllers 52 to 54. For example, a control signal is given to each power source based on the control signal. Further, the man-machine controller 64 communicates with the host computer as necessary, reads condition setting from the outside, transmits processing information of the ion implantation apparatus, and the like. This is the user EDP
Is for.

Next, the man-machine controller 51, the system control controllers 52 to 54, and the transmission units 55 to 57 described above will be described.

FIG. 5 is a block diagram showing the controller 90 and the transmission unit 91. The controller 90 generally indicates the man-machine controller 51 and the system control controllers 52 to 54 described above, and the transmission unit 91 generally indicates the transmission units 55 to 60 described above. The controller 90 includes a CPU 90A, a memory 90B and an I / O interface 90C which are connected to each other. The various component devices described above are connected to the I / O interface 90C. The transmission unit 91 includes a reception unit 91A, a transmission unit 91B, and an interface unit 91C that are connected to each other. The interface section 91C has a transmission line 92
Are connected.

When receiving information from the transmission line 92, the receiving unit 91A takes in the information and sends it to the controller 90. On the other hand, the transmitter 91B
The transmission information from the controller 90 is read and this transmission information is sent to the transmission line 92.

[Problems to be solved by the invention]

The ion implantation monitoring control device of the above-mentioned proposed example performs centralized monitoring control so that the centralized monitoring control device 64 collectively performs the setting operation and sends the data set by the centralized monitoring control device 64 to the man-machine controller 51. , The transmission unit 55-60 from the man-machine controller 51 to the controllers 52-54 for controlling each system
And the transmission lines 61 to 63 to send from each system control controller 52 to 53 to the customer death element device (power supply 80 etc.) and the monitoring data from each element device (measuring instrument 81 etc.) to each system control controller. Collected by 52-54, sent from each system control controller 52-54 to the man-machine controller 51 through the transmission units 55-60 and the transmission units 61-63, and sent from the man-machine controller 51 to the central monitoring controller 64 to send the monitoring data. I was trying to display it.

However, while such centralized monitoring control can solve the above-mentioned drawbacks of the conventional example, the centralized monitoring controller 64
To the controller 52 to 54 for each system, the man-machine controller 51, the transmission unit 55 to 60 and the transmission line 61 to 6
Since 3 is involved, it takes a considerable time for various data set by the operation of the centralized monitoring controller 64 to be transmitted to the system control controllers 52 to 54, and is output from the system control controllers 52 to 54. It takes a considerable amount of time for the monitoring data to be displayed on the centralized monitoring controller 64, which causes a problem of poor responsiveness of the monitoring control.

Therefore, for example, the operator may
When the keyboard is operated while watching the T screen, for example, when the extraction voltage is manually adjusted while monitoring the extraction voltage, the responsiveness of the monitoring control is poor as described above, and thus the manual adjustment is not easy.

An object of the present invention is to provide an ion implantation monitoring control device capable of improving the response of monitoring control when necessary.

[Means for solving problems]

The ion implantation monitoring control apparatus of the present invention performs control of a plurality of systems for ion implantation in a locally dispersed manner based on a given control condition, and a plurality of systems that capture and output monitoring data of a plurality of systems, respectively. A system control controller, a man-machine controller that gives control conditions for the plurality of system control controllers to the plurality of system control controllers, respectively, and captures monitoring data output from the plurality of system control controllers; Of the system control controller and the man-machine controller, and the transfer of the control conditions and the monitoring data between the plurality of system control controllers and the man-machine controller, which are connected between these transmission parts. Set the transmission line and the control conditions In addition, a centralized supervisory controller that displays the supervisory data, and a plurality of individual supervisory controls that exchange the control conditions and the supervisory data with the central supervisory controller that are respectively drawn from the plurality of system control controllers. Transmission line, a centralized supervisory control transmission line for exchanging the control condition and supervisory data between the centralized supervisory controller drawn from the man-machine controller, and the plurality of individual supervisory control transmission lines, And a transmission line switcher for selectively connecting any one of the centralized supervisory control transmission lines to the centralized supervisory controller.

[Action]

According to the configuration of the present invention, a plurality of individual supervisory control transmission lines are drawn from a plurality of system control controllers and connected to a transmission line switching device together with a centralized supervisory control transmission line drawn from a man-machine controller to switch transmission lines. The central monitoring controller is connected to the controller, and the transmission line switching device selectively connects one of the central monitoring control transmission line and the individual monitoring control transmission line to the central monitoring controller. When it is necessary to improve the responsiveness, it is possible to improve the responsiveness by connecting the system control controller and the centralized supervisory controller with a transmission line switch.

〔Example〕

An embodiment of the present invention will be described with reference to FIGS. 1 and 2. As shown in FIG. 1, this ion implantation monitoring control device includes a plurality of system control controllers 52 to 54, a man-machine controller 51, transmission units 55 to 60, and transmission lines 61 to.
63, a centralized supervisory controller 64, a plurality of individual supervisory control transmission lines 66 to 68, and a central supervisory control transmission line 65.

In this case, a plurality of system control controllers 52-
The 54 is configured to locally control multiple systems for ion implantation based on given control conditions and to capture and output monitoring data of multiple systems. Controller 51
The control conditions for the plurality of system control controllers 52 to 54 are given to the plurality of system control controllers 52 to 54, respectively, and the monitoring data output from the plurality of system control controllers 52 to 54 is captured. It is configured.

The transmission units 55 to 60 include the plurality of system control controllers 52.
To 54 and man-machine controller 51, and transmission lines 61 to 63 connected between these transmission units 52 to 54, respectively.
Is a plurality of system control controllers 52 to 54 and a man-machine controller 51 for the control conditions and monitoring data.
It will be exchanged between them.

The centralized supervisory controller 64 is composed of a CRT display device, a keyboard and the like, and sets the control conditions and displays the supervisory data.

The plurality of individual supervisory control transmission lines 66 to 68 are drawn from the plurality of system control controllers 52 to 54, respectively, exchange the control conditions and supervisory data with the central supervisory controller 64, and centralize. The supervisory control transmission line 65 is drawn out from the man-machine controller 51 and exchanges the control condition and the supervisory data with the central supervisory controller 64.

The transmission line switching device 69 includes the plurality of individual supervisory control transmission lines 66.
~ 68 and the centralized supervisory control transmission line 65 are selectively connected to the centralized supervisory controller 64.

Compared with that of FIG. 4, this ion implantation monitoring control device draws out individual monitoring control transmission lines 66 to 68 from the respective system control controllers 52 to 54, and uses the man-machine controller 64.
Connected to the transmission line switching device 69 together with the centralized monitoring control transmission line 65 extracted from the
The difference is that the transmission line selector 70 is connected.

The transmission line switch 69 and the transmission line selector 70 are specifically configured as shown in FIG. That is, the transmission line switch 69
Is a three-state buffer B ₁₁ ,, B ₁₂ ,, B ₂₁ ,, B ₂₂ ,, B ₃₁ ,, B ₃₂
The transmission line selector 70 comprises a select switch SW and the like. When the select switch SW is set to, for example, the position a, the three-state buffers B ₁₁ and B ₁₂ are brought into conduction, and the man-machine controller 51 and the centralized supervisory controller 64. Connected to
When the select switch SW is set to, for example, the b position, the three-state buffers B ₂₁ and B ₂₂ are brought into conduction, the system control controller 52 and the centralized supervisory controller 64 are connected, and when the select switch SW is set to, for example, the c position, the three-state buffers are connected. The buffers B ₃₁ and B ₃₂ become conductive, and the system control controller 54 and the centralized monitoring controller 64 are connected. In this figure, the central supervisory control transmission line 65 and the individual supervisory control transmission lines 66 to 68 are shown.
Describes the control transmission line and the monitoring transmission line separately.

With this configuration, for example, when manually adjusting the extraction voltage while observing the measured value of the extraction voltage, the transmission line switching device 70 is operated to cause the transmission line switching device 69 to operate the system control controller 52 and the centralized monitoring controller 64. If the centralized supervisory controller 64 issues an instruction to increase the extraction voltage, for example, this signal is transmitted from the centralized supervisory controller 64 through the transmission line switch 69 and the individual supervisory control transmission line 66 to the system control controller 52. Then, the measured value of the extraction voltage enters the centralized monitoring controller 64 by a route reverse to the above.

The other structure and operation are the same as those in FIG.

The ion implantation monitoring control apparatus of this embodiment draws out individual monitoring control transmission lines 66 to 68 from the system control controllers 52 to 54, and a transmission line switching device together with the centralized monitoring control transmission line 65 drawn from the man-machine controller 51. Connect 69,
The centralized supervisory controller 64 is connected to the transmission line switching device 69, and one of the centralized supervisory control transmission line 65 and the individual supervisory control transmission lines 66 to 68 is selectively concentrated by selection by the transmission line selector 70. Since it is connected to the supervisory controller 64, when it is necessary to improve the responsiveness such as when manually adjusting the extraction voltage, the transmission line selector 70 is operated to operate the system controller 52 and the centralized supervisory control. If the device 64 is connected, the response can be improved and the adjustment can be easily performed.

It should be noted that the present invention is not limited to the type of the ion implanter, and the present invention can be applied to, for example, an electrostatic scan type ion implanter. Also, as the items of manual adjustment,
Not only the extraction voltage but also various voltages, currents, etc. are conceivable.

〔The invention's effect〕

According to the ion implantation monitoring control device of the present invention, a plurality of individual monitoring control transmission lines are drawn from a plurality of system control controllers and connected to a transmission line switching device together with a central monitoring control transmission line drawn from a man-machine controller. , The centralized supervisory controller was connected to the transmission line switching device, and the transmission line switching device selectively connected either one of the centralized supervisory control transmission line and the individual supervisory control transmission line to the centralized supervisory controller. If you need to improve responsiveness,
If the system control controller and the centralized supervisory controller are connected by the transmission line switch, the responsiveness can be improved.

[Brief description of drawings]

FIG. 1 is a block diagram showing an embodiment of the present invention, FIG. 2 is a concrete block diagram of an essential part of FIG. 1, FIG. 3 is a block diagram showing a conventional example, and FIG. 4 is an already proposed example. FIG. 5 is a concrete block diagram of an essential part of FIG. 51 ... Man-machine controller, 52-54 ... System control controller, 55-60 ... Transmission section, 61-63 ... Transmission line,
64 …… Centralized supervisory controller, 65 …… Centralized supervisory control transmission line,
66-68 …… Transmission line for individual monitoring and control, 69 …… Transmission line switch

Claims (1)

[Claims] 1. A plurality of system control controllers for locally controlling a plurality of systems for ion implantation based on a given control condition and for capturing and outputting monitoring data of a plurality of systems, respectively. , A man-machine controller that gives control conditions for the plurality of system control controllers to the plurality of system control controllers and that captures monitoring data output from the plurality of system control controllers, and the plurality of system control controllers And a transmission section respectively provided in the man-machine controller, and a transmission line connected between these transmission sections for exchanging the control conditions and the monitoring data between the plurality of system control controllers and the man-machine controller. , Set the control conditions, and And a plurality of individual supervisory control transmission lines that are respectively drawn from the plurality of system control controllers and exchange the control conditions and supervisory data with the central supervisory controller. ,
A central supervisory control transmission line that is drawn from the man-machine controller to exchange the control conditions and supervisory data with the central supervisory controller, and a plurality of individual supervisory control transmission lines and a central supervisory control transmission line. An ion implantation monitoring and control device comprising: a transmission line switching device for selectively connecting any one of the lines to the centralized monitoring and control device.