JPH0793124B2 - Ion implanter - Google Patents

Description

TECHNICAL FIELD The present invention relates to an ion implantation apparatus for implanting ions into a semiconductor wafer.

[Conventional technology]

FIG. 4 shows the configuration of an example of a conventional electrostatic scan type ion implantation apparatus. This electrostatic scan type ion implanter comprises an ion implanter body I'and an ion implant monitor controller II 'which monitors and controls the ion implanter body I', and an ion implant monitor controller II '. A control signal and a monitor signal are exchanged with the main body I'of the ion implanter.

The ion implanter main body I'is mainly composed of an ion source 1, a mass spectrometer 3, an accelerating tube 4, and an end station 6, and the high potential section 25 has a gas box 7, an ion source electric power source in addition to the above. 8, pull-out power source 9, magnet power source 10, telemeter 22 are installed, and in addition to the above, acceleration power source 11, Q lens power source 14, scanning power source 15, scanning mode, injection mode for selecting the spot mode on the ground 24. Selection unit 16, end station control unit 17, vacuum control unit 18, interlock unit 19, signal relay station 2
0, telemeter 21 is installed.

Further, the ion implantation monitoring control unit II ′ includes an operation unit 31, a display unit 3
2. The telemeter 33 is included.

An optical fiber cable and a conductive cable are connected between the ion implantation monitoring controller II 'and the ion implantation apparatus body I'. Specifically, the ion implantation monitoring control unit II ′ and the acceleration power source 11, the Q lens power source 14, the scanning power source 15, the implantation mode selecting unit 16, in the ground portion 24 of the ion implantation apparatus main body I ′ having no potential problem, The end station controller 17, the vacuum controller 18, and the signal relay station 20 are connected by a conductive cable. Further, an optical fiber cable is used between the ion implantation monitoring control unit II ′ having a large potential difference and the gas box 7, ion source power source 8, extraction power source 9, and magnet power source 10 of the high potential unit 25 via telemeters 33 and 22. Connected. Further, the telemeter 21 of the ground portion 24 is connected to the ion implantation monitoring control unit II ′ by a conductive cable, and the ion source power source 8 and the extraction power source of the high potential portion 25 are connected.
9, It is connected to the magnet power supply 10 by an optical fiber cable. Further, the telemeter 22 is connected to the extraction power source 9 and the magnet power source 10 by a conductive cable.

Note that the gas box 7, the ion source power source 8, the extraction power source 9, and the magnet power source 10 have built-in telemeters corresponding to the telemeters 21 and 33, respectively.

In this ion implantation apparatus, the ion implantation monitoring control unit
Control signals generated by operating various switches of the operation unit 31 of II 'are telemeters 33, 21 to the gas box 7, ion source power supply 8, extraction power supply 9 and magnet power supply 10 of the high potential part 25 of the ion implanter main body I'. , 22, converted into an optical signal and transmitted,
The supervisory signal is similarly converted into an optical signal and transmitted in the reverse path. Further, from the ion implantation monitoring control unit II ′ to the acceleration power supply 11, the Q lens power supply 14, the scanning power supply 15, the implantation mode selection unit 16, the end station control unit 17, the vacuum control unit 18, the interlock unit 19, etc. of the ground portion 24. The control signals sent are sent electronically, and the supervisory signals are also sent electronically on the reverse path.

Then, by transmitting such a control signal, a solenoid valve, a solenoid relay, etc. built in the gas box 7, the ion source power source 8, the extraction power source 9, the magnet power source 10, the acceleration power source 11, etc. are driven, and, for example, the gas box. 7, start the supply of specific gas, adjust the amount, turn on / off the pull-out power source 9, turn on / off the magnet power source 10, adjust the current,
Also, monitoring signals such as various voltage and current values of the ion source power supply 8, extraction power supply 9, magnet power supply 10, etc. are supplied to the ion implantation monitoring control unit.
It is sent to II 'and displayed on the display unit 32.

[Problems to be solved by the invention]

Such a conventional ion implanter is a simple transmission system that uses one transmission path for one type of control signal or supervisory signal between the ion implanter body I'and the ion implantation monitor control unit II '. Since the control signal and the monitoring signal are transmitted, the number of cables connecting the ion implantation apparatus main body I'and the ion implantation monitoring control section II 'is enormous, resulting in low system reliability and difficult maintenance. I was trying.

An object of the present invention is to provide an ion implantation apparatus which can reduce the number of cables between the ion implantation apparatus main body and the ion implantation monitoring control unit to improve system reliability and facilitate maintenance. .

[Means for solving problems]

An ion implantation apparatus according to the present invention is an ion implantation apparatus that transfers a control signal and a monitoring signal between an ion implantation apparatus main body and an ion implantation monitoring control unit, wherein the ion implantation monitoring control unit transmits a control signal and a monitoring signal. A multi-transmission master for reception and a master-side optical input / output unit connected to this multi-transmission master are built-in, and a multi-transmission slave for control signal reception and supervisory signal transmission is provided in the ion implantation apparatus body. A plurality of slave unit side optical input / output units connected to this multiplex slave unit are distributed and built in,
And, at least one set of the multiplex transmission device and the slave device side optical input / output unit is arranged in a high potential part of the ion implantation device body, and the master device side optical input / output unit of the ion implantation monitoring control part and the ion implantation device. It is characterized in that one main unit side optical input / output unit of the main body is connected by an optical fiber cable, and the plurality of sub unit side optical input / output units are connected by an inter-subunit optical fiber cable.

[Action]

According to the configuration of the present invention, the multiplex transmission master unit and the master side optical input / output unit are built in the ion implantation monitoring control unit, and a plurality of multiple transmission slave units and slave unit side optical input / output units are set in the main body of the ion implantation apparatus. Distributed and built-in, and at least one set of multiplex transmission element and optical element input / output unit on the child device side is arranged in the high potential part of the main body of the ion implanter, and optical input / output unit on the parent device side and optical input / output apparatus on the child device side. Units are connected with an optical fiber cable, and multiple optical input / output units on the slave unit side are connected with an optical fiber cable between slave units, and a control signal and a monitor signal are sent between the ion implantation monitoring control unit and the ion implanter body. Since it is multiplexed and converted into an optical signal for delivery, only two optical fiber cables are required, one for control signals and one for monitoring signals. The number of cables connecting the ion implantation monitoring control unit and the ion implantation equipment body Can be dispensed in two, it is possible to reduce significantly the number of cables than the conventional, it is possible to increase system reliability and can facilitate maintenance. Further, since the signal is transmitted by an optical signal, even when the signal is transmitted to a portion having a large potential difference, electrical insulation can be ensured and safety is high, and it is also less susceptible to external noise, which is also highly reliable. .

〔Example〕

FIG. 1 shows the structure of an ion implantation apparatus according to an embodiment of the present invention. This ion implantation apparatus is composed of an ion implantation apparatus body I and an ion implantation monitoring control unit II that monitors and controls the ion implantation apparatus body I. Between the ion implantation monitoring control unit II and the ion implantation apparatus body I. Control signals and supervisory signals are passed.

The ion implantation monitoring control unit II includes a multiplex transmission master 41 for transmitting control signals and receiving monitoring signals, and a master side optical input / output unit 42 connected to the multiplex transmission master 41.

In addition, the transmitter / receiver side optical input / output unit connected to the multiple transmitters 51, 53, 55 for receiving the control signal and transmitting the supervisory signal in the main body I of the ion implanter. Five
It has 2,54,56 built-in.

Then, the master side optical input / output unit 42 of the ion implantation monitoring control section II and the slave side optical input / output unit 52 of the ion implantation apparatus body I are connected by an optical fiber cable 61, and the slave side optical input / output is connected. Units 52, 54 and 56 are connected to each other by inter-subunit optical fiber cables 62 and 63. Also, the multiplex transmission master unit 4
1 between the master side optical input / output unit 42 and the multiplex transmission unit 5
A conductive cable is connected between the optical input / output units 52, 54 and 56 on the slave unit side and the optical input / output units 52 and 54.

The optical fiber cable 61 and the inter-slave optical fiber cables 62, 63 are two-core (outgoing path, returning path). Further, the multiple transmitters 51, 53, 55 are arranged in a distributed manner to be close to the positions of the control target and the monitoring target of the ion implantation apparatus body I, respectively, and the slave side optical input / output units 52, 54, 56 are also arranged. It is installed near them.

FIG. 2 shows a detailed configuration diagram of this ion implantation apparatus (electrostatic scan type). Hereinafter, a detailed description will be given based on this figure.

The ion implanter body I is an ion source 1 that generates ions.
A mass analyzer 3 for selecting a necessary ion species from the ion beam 2 extracted from the ion source 1, an accelerating tube 4 for accelerating the ion beam 2 emitted from the mass analyzer 3, and an accelerating tube 4. An end station 6 that applies the ion beam 2 to the wafer 5 to perform ion implantation is configured as a main element, and the inside of these is evacuated. The ion source 1 is connected to a gas box 7 for supplying gas, an ion source power source 8 for supplying various voltages and currents, and an extraction power source 9 for extracting the ion beam 2. An analysis magnet power supply 10 for supplying power to a mass analysis magnet (not shown) is connected to the mass analyzer 3, and an acceleration power supply 11 is connected to the acceleration tube 4.

The ion source 1 is, for example, a hot cathode PIG type attached to a solid oven, has a filament (not shown), an arc electrode (not shown), and a source magnet (not shown). Power supply, arc power supply, source magnet power supply, oven power supply, etc.) 8 to filament,
By supplying power to the arc electrode, the source magnet, etc., the gas supplied from the gas box 7 to the arc chamber is ionized. Specifically, plasma is generated by performing arc discharge by using thermionic emission from the filament as a trigger. The slit-shaped ion extraction port 1a is formed by the extraction voltage supplied from the extraction power source 9.
Extract the ion beam 2 from. The source magnet applies a magnetic field to the arc chamber in order to increase the traveling distance of the arc.

This ion source 1 can use not only gas but also solid (As, P, Sb, etc.) as an ion source substance. When using a solid, the solid ion source substance is evaporated in a solid oven. The carrier gas (Ar or the like) is guided from the gas box 7 to the arc chamber while being guided to the arc chamber, and the solid ion source material is ionized.

The gas box 7 is connected to the above-mentioned ion source 1, and for example, four gas bottles (for example, Ar, SiF ₄ , BCl ₃ , PCl, etc.)
And a gas of any type corresponding to the required ion species is selectively supplied to the ion source 1.

The mass analyzer 3 is fed from the analysis magnet power source 10 to the mass analysis magnet which is deflected by 90 degrees to select a necessary ion species from the ion beam 2 extracted from the ion source 1 and to perform magnetic focusing of the mass analysis magnet. The ion beam 2 is guided to the acceleration tube 4 by utilizing the action.

The accelerating tube 4 has, for example, a structure in which an insulator and a metal electrode are bonded in multiple stages, a constant accelerating voltage is applied to each electrode from a accelerating power source 11 through a resistor (not shown), and the ion beam 2 is described above. The end station 6 is accelerated by being accelerated by a voltage obtained by combining the extraction voltage and this acceleration voltage.
This accelerating voltage is set according to the injection energy.

The ion beam 2 exiting the accelerating tube 4 is focused by the Q lens 12 before entering the end station 6, and further scanned by the scanning electrode 13 to scan and irradiate the entire surface of the wafer 5 in the end station 6. Power is supplied from the Q lens power source 14 to the Q lens 12, and power is supplied from the scan electrode 15 to the scan electrode 13. The Q lens power supply 14 and the scanning power supply 15 are controlled by the Q lens / sweep control unit 26.

The end station 5 has an end station controller 17
Thus, the loading / unloading of the wafer 5 is controlled. The vacuum system, that is, the vacuum pump, is controlled by the vacuum controller 18.

The interlock unit 19 has a function of stopping the operation and ensuring safety when, for example, cooling water stops flowing and the temperature rises abnormally.

27 is a signal relay station including a slave block composed of the multiplex transmitter 51 and slave side optical input / output unit 52 of FIG. 1, and 28 is the multiplex transmitter 53 and slave side optical input / output unit of FIG. 54
It is a child device block consisting of. Further, the gas box 7 has a slave unit block including a multiplex transmitter 55 and a slave-side optical input / output unit 56 shown in FIG.
The ion source power supply 8 has a built-in telemeter and is connected to the slave block 28 by an optical fiber cable. 23 is an insulation transformer, 24 is a ground part, and 25 is a high potential part.

In the ion implanter main body I, the optical signal sent through the optical fiber cable 61 is sent from the signal relay station 27 to the gas box 7 and the slave unit block in the ion source power source 8 through the slave unit block 28. In the slave unit block, an optical signal is converted into an electric signal, individual control signals are restored, and various voltages, currents, extraction voltages, magnet currents, etc. of the ion source 1 are restored based on the control signals. In this case, the control signal is assigned to each type of channel. For example, in the slave unit built in the signal relay station 27, the Q lens / sweep control unit 26, the vacuum control unit 18, and the end station control connected to the slave unit block. Only the control signal of the channel corresponding to the section 17 or the like is restored. Similarly, the slave unit block 28 restores only the control signals of the channels corresponding to the extraction power source 9 and the magnet power source 10. Gas box 7
Is also the same.

Although the monitoring signal will not be described in detail, the signals obtained in each unit are channel-assigned and multiplexed in the slave unit block, and further converted into an optical signal. Contrary to the control signal, the ion implantation monitoring control unit is provided. Will be sent to II.

On the other hand, the ion implantation monitoring control unit II includes an operation unit 31 including an on / off switch and the like, a display unit 32 including a lamp, the multiplex transmission master unit 41 and the master unit side optical input / output unit shown in FIG. The operation unit 31 produces a control signal for controlling the ion implantation apparatus main body I, and the display unit 32
Displays the status of the monitoring signal sent from the ion implanter body I. The control signal is multiplexed by the multiplex transmission master unit 41, further converted into an optical signal by the master unit side optical input / output unit 42 and sent to the optical fiber cable 61.
The optical signal sent through the optical fiber cable 61 is converted into an electric signal by the master side optical input / output unit 42,
Further, the multiplex transmission master device 41 restores the individual supervisory signals and sends them to the display unit 32.

Then, by transmitting such a control signal, a solenoid valve, a solenoid relay, etc. built in the gas box 7, the ion source power source 8, the extraction power source 9, the magnet power source 10, the acceleration power source 11, etc. are driven, and, for example, the gas box. 7, starting the supply of a specific gas, adjusting the amount thereof, turning on / off the extraction power source 9, turning on / off the magnet power source 10, adjusting the current,
Also, monitoring signals such as various voltage and current values of the ion source power supply 8, the extraction power supply 9, the magnet power supply 10, etc. are sent to the ion implantation monitoring control unit.
Send to II and display it on display 32.

FIG. 3 shows a specific configuration of the ion implantation monitoring control unit II. 41A is a CPU and 41B is a CPU interface, which are configured as a programmable controller and perform various sequence operations (ON / OFF, interlock, etc.). , Which functions as the multiplex transmission master device 41.

The ion implantation apparatus of this embodiment includes an ion implantation monitoring control unit.
The multi-transmission master device 41 and the master-device-side optical input / output unit 42 are built in II, and the multi-transmission slave devices 51, 53, 55 are provided in the ion implantation apparatus main body I.
And the slave unit side optical input / output units 52, 54, 56 are distributed and built in, and at least one set of multiplex transmitters and slave unit side optical input / output units are arranged in the high potential portion of the ion implantation apparatus main body I. , The master unit side optical input / output unit 42 and the slave unit side optical input / output unit 52 are connected by an optical fiber cable 61, and the plurality of slave unit side optical input / output units 52, 54, 56 are connected to the slave unit optical fiber cable 62, The optical fiber cable 61 is used for the control signal because the control signal and the monitoring signal are multiplexed and converted into an optical signal to be transferred between the ion implantation monitoring control unit II and the ion implantation apparatus main body I. 2 for the monitoring signal and the ion implantation monitoring controller II and the ion implantation apparatus main body 1
You can use only 2 cables to connect with
It is possible to significantly reduce the number of cables compared to the past,
System reliability can be improved and maintenance can be facilitated. Further, since the signal is transmitted by an optical signal, even when the signal is transmitted to a portion having a large potential difference, electrical insulation can be ensured and safety is high, and it is also less susceptible to external noise, which is also highly reliable. .

In addition, although the present invention is applied to the electrostatic scan type ion implantation apparatus in the above-described embodiment, the present invention can also be applied to the mechanical scan type.

〔The invention's effect〕

According to the ion implantation apparatus of the present invention, the ion implantation monitoring controller has the multiplex transmission master unit and the master unit side optical input / output unit built-in, and the ion implantation apparatus main body has the multiplex transmission slave unit and the slave unit side optical input / output unit. Plural sets are distributed and built-in, and at least one set of multiplex transmission device and slave device side optical input / output unit is arranged in the high potential part of the ion implantation apparatus main body, and the master device side optical input / output unit and slave device side optical device. Connect the input / output unit with an optical fiber cable, connect the optical input / output units on the slave units with a fiber-optic cable between the slave units, and control signals and monitor between the ion implantation monitoring control unit and the ion implanter body. In order to multiplex signals and convert them into optical signals for delivery, only two optical fiber cables are required, one for control signals and the other for monitoring signals. Bull number can be dispensed in two, it is possible to reduce significantly the number of cables than the conventional, it is possible to increase system reliability and can facilitate maintenance. Further, since the optical signal is transmitted, even when the signal is transmitted to a portion having a large potential difference, electrical insulation can be ensured, the safety is high, and it is hardly affected by external noise, and the reliability is also high in this respect.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a block diagram of an embodiment of the present invention, FIG. 2 is a detailed block diagram thereof, and FIG. 3 is a block diagram showing a concrete configuration of an ion implantation monitoring control unit, and FIG. The figure is a block diagram of a conventional example. I ... Ion implanting device main body, II ... Ion implantation monitoring control unit, 41 ... Multiple transmission master unit, 42 ... Master side optical input / output unit, 51, 53, 55 ... Multiple transmitter slave unit, 52, 54,56 …… Slave side optical I / O unit, 61 …… Optical fiber cable, 62,63…
… Optical fiber cable between slave units

Claims (1)

[Claims] 1. An ion implantation apparatus for delivering a control signal and a monitoring signal between an ion implantation apparatus main body and an ion implantation monitoring control section, wherein the ion implantation monitoring control section is for transmitting a control signal and receiving a monitoring signal. A multi-transmission master unit and a master-side optical input / output unit connected to this multi-transmission master unit are built-in, and a multi-transmission slave unit for control signal reception and supervisory signal transmission to the ion implantation apparatus main body and this multi-transmission unit. Multiple sets of slave unit side optical input / output units connected to slave units are distributed and built in,
And, at least one set of the multiplex transmission device and the slave device side optical input / output unit is arranged in a high potential part of the ion implantation device body, and the master device side optical input / output unit of the ion implantation monitoring control part and the ion implantation device. An ion implanting device, wherein one of the slave unit side optical input / output units of the main body is connected by an optical fiber cable, and the plurality of slave unit side optical input / output units are connected by an inter-subunit optical fiber cable.