JPH0748405B2 - Method for manufacturing organic thick film resistor - Google Patents
Method for manufacturing organic thick film resistorInfo
- Publication number
- JPH0748405B2 JPH0748405B2 JP1197439A JP19743989A JPH0748405B2 JP H0748405 B2 JPH0748405 B2 JP H0748405B2 JP 1197439 A JP1197439 A JP 1197439A JP 19743989 A JP19743989 A JP 19743989A JP H0748405 B2 JPH0748405 B2 JP H0748405B2
- Authority
- JP
- Japan
- Prior art keywords
- curing
- thick film
- film resistor
- organic thick
- paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 229920005989 resin Polymers 0.000 claims description 15
- 239000011347 resin Substances 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 239000011159 matrix material Substances 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000001723 curing Methods 0.000 description 28
- 239000000758 substrate Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 7
- 238000007639 printing Methods 0.000 description 6
- 238000007650 screen-printing Methods 0.000 description 4
- 238000007602 hot air drying Methods 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006355 external stress Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000013007 heat curing Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000001029 thermal curing Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 238000011416 infrared curing Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 235000011837 pasties Nutrition 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Description
（産業上の利用分野） 本発明は、電子部品が実装される基板等に形成される有
機厚膜抵抗体の製造方法に関する。 （従来の技術） 一般に、有機厚膜抵抗体用樹脂マトリックスとしては、
エポキシ、フェノール、ポリイミド等の有機熱硬化性樹
脂が用いられる。このため、塗布後の硬化は、100〜250
℃程度で行われる。しかしながら、熱風乾燥炉等による
熱硬化のみでは、得られる有機厚膜抵抗体は耐熱性に乏
しく、樹脂マトリックスの硬化・架橋密度が不充分であ
り、半田付け、リフロー、封止樹脂モールド等による抵
抗値変化が著しい。そこで、基板にダメージを与えるこ
と無く樹脂マトリックスの硬化・架橋密度を上げ、得ら
れる有機厚膜抵抗体の耐熱性を向上させるために、特開
昭58−101488号公報に開示されているような、有機厚膜
抵抗体用のペーストを塗布した後、遠赤外線により初期
硬化を行い、さらに加熱硬化する有機厚膜抵抗体の製造
方法が案出されている。 （発明が解決しようとする課題） 一方、有機厚膜抵抗体に限らず、ペーストを塗布する方
法としては、スクリーン印刷法、描画法、インクジェッ
ト法等種々あるが、スクリーン印刷法が一般的である。
この方法は、有機繊維あるいは金属繊維製のメッシュ上
に必要充分量のペーストを置き、スキージゴムによりメ
ッシュ開口部より、ペーストを転写塗布する方法であ
る。従って、メッシュ上の必要充分量のペーストは、印
刷動作の度に、小さな気泡を巻き込み、気泡を混入した
まま塗布される。 ところが、遠赤外線による初期硬化は、熱風乾燥炉等に
よる熱硬化に比べ、基板表面での昇温速度が著しく速
い。このため、前述したスクリーン印刷法によって塗布
された抵抗膜は、内部に気泡を含んだ状態で硬化される
こととなり、その結果、形成された抵抗体は、抵抗値ば
らつきが大きく、外部応力により容易にクラックが発生
する。 本発明は、以上のような実情に鑑みてなされたものであ
り、その解決しようとする課題は、印刷法によって形成
された抵抗膜内の気泡による抵抗値のばらつきである。 そして、本発明の目的とするところは、印刷法によって
形成する場合に、抵抗値のばらつきが少なく、また、耐
クラック性に優れた有機厚膜抵抗体の製造方法を提供す
ることにある。 （課題を解決するための手段） 以上のような課題を解決するために、請求項１の発明が
採った手段は、 「有機厚膜抵抗体用のペースト状樹脂マトリックスを塗
布する塗布工程と、前記ペースト状樹脂マトリックスを
その硬化開始温度以下に保持して塗布膜より気泡を排除
する脱泡工程と、前記塗布膜を遠赤外線により初期硬化
する初期硬化工程と、さらに加熱して硬化する硬化工程
とを備えたことを特徴とする有機厚膜抵抗体の製造方
法。」 をその要旨とするものである。すなわち、 遠赤外線による初期硬化を行う前工程において、塗布膜
より気泡を排除する脱泡工程を行うのである。つまり、
塗布された抵抗膜付基板を減圧処理するか、あるいは若
干の高温雰囲気に投入し、ペースト状樹脂マトリックス
自体の粘度を低下させることにより、膜内より気泡を排
除するのである。ただし、遠赤外線による初期硬化は、
熱風乾燥炉等による熱硬化と異なり、基板表面での昇温
速度が著しく速く、硬化初期段階を短時間で行うことに
特徴があるため、高温雰囲気での脱泡は、ペースト状樹
脂マトリックスの粘度が低下する温度であると同時に、
硬化開始温度以下であること、すなわち35〜60℃程度で
あることが望ましい。 （発明の作用） 本発明が以上のような手段を採ることによって、次のよ
うな作用がある。 ベースト状樹脂マトリックスの塗布工程の後、ベースト
状樹脂マトリックスをその硬化開始温度以下に保持する
と、塗布膜の粘度が低下して内部の気泡を排除すること
ができる。 この脱泡工程は、35〜60℃程度であることが望ましい。 その後、遠赤外線による初期硬化を行うので、内部に気
泡を殆ど含まない有機厚膜素子を得る事が可能となる。 （実施例） 以下に、従来の製造方法（比較例）と、本発明の実施例
との比較を行う。 比較例 室温23±２℃、湿度50±15％に制御された印刷室におい
て、市販有機厚膜抵抗ペースト（株式会社アサヒ化学研
究所製、TUシリーズ）を用いて、スクリーン印刷法によ
りNi/Auめっき電極を有する樹脂基板上に塗布形成し
た。この後、基板表面温度が210℃となるよう制御され
た遠赤外線硬化炉に投入し、初期硬化を行った後、熱風
式乾燥機内で170℃、60分の硬化処理を行った。目標抵
抗値は100kΩとし、印刷作業は、一日一回、合計10回行
った。また、この時の抵抗体有効サイズは１×1mmとし
た。 実施例１ 比較例１の製造工程において、抵抗ペーストが印刷塗布
された基板を45℃に温度設定された熱風式乾燥機内に20
分間放置し、塗布膜より気泡を排除する。その後、遠赤
外線による初期硬化を行った以外は、比較例と同様の方
法で抵抗体を形成した。 実施例２ 実施例１の初期硬化工程において、抵抗ペーストを印刷
塗布された基板１枚を先行試験板として遠赤外線初期硬
化炉に投入し、初期硬化後抵抗値を測定し、経験補正式
により、後硬化処理後の抵抗値が100kΩとなる様に、遠
赤外線初期硬化炉出力を調整する以外は、比較例と同様
の方法で抵抗体を形成した。 以上のような比較例、実施例１および実施例２の各方法
により製造された印刷抵抗体付基板中より、無作為に20
個（合計200個）ずつの抵抗体を選出し、下記に示す評
価を行った。(Field of Industrial Application) The present invention relates to a method for manufacturing an organic thick film resistor formed on a substrate or the like on which electronic components are mounted. (Prior Art) Generally, as a resin matrix for an organic thick film resistor,
Organic thermosetting resins such as epoxy, phenol and polyimide are used. For this reason, curing after application is 100-250.
It is performed at about ℃. However, the organic thick film resistor obtained by only heat curing in a hot air drying oven has poor heat resistance, and the curing / crosslinking density of the resin matrix is insufficient, and resistance due to soldering, reflow, sealing resin molding, etc. The value changes significantly. Therefore, in order to increase the curing / crosslinking density of the resin matrix without damaging the substrate and improve the heat resistance of the resulting organic thick film resistor, as disclosed in JP-A-58-101488. A method for manufacturing an organic thick film resistor has been devised, in which a paste for an organic thick film resistor is applied, initial curing is performed by far infrared rays, and further heat curing is performed. (Problems to be Solved by the Invention) On the other hand, not only the organic thick film resistor but also various methods such as a screen printing method, a drawing method and an inkjet method for applying the paste, but the screen printing method is common. .
This method is a method in which a necessary and sufficient amount of paste is placed on a mesh made of organic fibers or metal fibers, and the paste is transferred and applied from a mesh opening portion using a squeegee rubber. Therefore, the necessary and sufficient amount of the paste on the mesh is applied with the air bubbles mixed in, enclosing small air bubbles every printing operation. However, in the initial curing with far infrared rays, the rate of temperature rise on the substrate surface is remarkably higher than that in the thermal curing with a hot air drying oven or the like. Therefore, the resistance film applied by the screen printing method described above is hardened in a state where air bubbles are contained inside. As a result, the formed resistance element has a large variation in resistance value and is easily affected by external stress. Cracks occur. The present invention has been made in view of the above circumstances, and a problem to be solved is a variation in resistance value due to air bubbles in a resistance film formed by a printing method. It is an object of the present invention to provide a method for manufacturing an organic thick film resistor that has little resistance variation when formed by a printing method and is excellent in crack resistance. (Means for Solving the Problems) In order to solve the above-mentioned problems, the means adopted by the invention of claim 1 is, “A coating step of applying a paste-like resin matrix for an organic thick film resistor, and A defoaming step of eliminating the bubbles from the coating film by holding the pasty resin matrix below its curing start temperature, an initial curing step of initially curing the coating film with far infrared rays, and a curing step of further heating and curing. And a method for manufacturing an organic thick film resistor, which is characterized in that That is, a defoaming step of eliminating bubbles from the coating film is performed in a step before the initial curing with far infrared rays. That is,
Bubbles are eliminated from the inside of the film by reducing the viscosity of the paste-like resin matrix itself by subjecting the coated substrate with a resistance film to a reduced pressure treatment or by introducing it into a slightly high temperature atmosphere. However, the initial curing with far infrared rays is
Unlike thermal curing in a hot air drying oven, etc., the rate of temperature rise on the substrate surface is extremely fast, and the initial stage of curing is characterized by a short time. Is the temperature at which
It is desirable that the temperature is below the curing start temperature, that is, about 35 to 60 ° C. (Operation of the Invention) The present invention has the following effects by adopting the above means. After the step of applying the basted resin matrix, if the basted resin matrix is kept at a temperature below its curing start temperature, the viscosity of the coating film is lowered and the bubbles inside can be eliminated. It is desirable that this defoaming step be performed at about 35 to 60 ° C. After that, since the initial curing is performed by far infrared rays, it is possible to obtain an organic thick film element containing almost no bubbles inside. (Example) Below, the conventional manufacturing method (comparative example) and the Example of this invention are compared. Comparative Example Ni / Au by screen printing method using a commercially available organic thick film resistor paste (TU series manufactured by Asahi Chemical Laboratory Co., Ltd.) in a printing room controlled at room temperature of 23 ± 2 ° C. and humidity of 50 ± 15%. It was applied and formed on a resin substrate having a plated electrode. After that, the substrate was placed in a far-infrared curing furnace whose surface temperature was controlled to be 210 ° C., subjected to initial curing, and then cured at 170 ° C. for 60 minutes in a hot air dryer. The target resistance value was 100 kΩ, and printing work was performed once a day for a total of 10 times. The effective size of the resistor at this time was set to 1 × 1 mm. Example 1 In the manufacturing process of Comparative Example 1, the substrate on which the resistance paste was printed and applied was placed in a hot air dryer whose temperature was set to 45 ° C.
Leave it for a minute to remove air bubbles from the coating film. After that, a resistor was formed in the same manner as in the comparative example except that the initial curing was performed with far infrared rays. Example 2 In the initial curing step of Example 1, one substrate on which a resistance paste was printed and applied was placed in a far infrared ray initial curing furnace as a preceding test plate, the resistance value after initial curing was measured, and by an empirical correction formula, A resistor was formed in the same manner as in the comparative example except that the far infrared ray initial curing furnace output was adjusted so that the resistance value after the post-curing treatment was 100 kΩ. 20 randomly selected from the substrates with a printed resistor manufactured by the methods of Comparative Example, Example 1 and Example 2 as described above.
Resistors were selected for each (200 in total) and evaluated as described below.
実体顕微鏡により直径0.3mm以上のポイド数を検査し
た。その結果を表１に示す。 この表より解るように、実施例１又は実施例２により製
造された抵抗体中には気泡がほとんどみられなかった。 The number of voids with a diameter of 0.3 mm or more was examined by a stereoscopic microscope. The results are shown in Table 1. As can be seen from this table, almost no bubbles were observed in the resistor manufactured according to Example 1 or Example 2.
抵抗値を測定し、以下の計算式により基板内の抵抗値ば
らつきおよび全体での抵抗値ばらつきを算出した。その
結果を表２に示す。 この表より解るように実施例１又は実施例２により製造
された抵抗体の抵抗値ばらつきは比較例に比して減少し
た。 （発明の効果） 以上詳述したように、本発明の有機厚膜抵抗体の製造方
法は、 「有機厚膜抵抗体用のペースト状樹脂マトリックスを塗
布する塗布工程と、前記ペースト状樹脂マトリックスを
その硬化開始温度以下に保持して塗布膜より気泡を排除
する脱泡工程と、前記塗布膜を遠赤外線により初期硬化
する初期硬化工程と、さらに加熱して硬化する硬化工程
とを備えたことを特徴とする有機厚膜抵抗体の製造方
法。」 をその構成上の特徴としている。 従って、この発明によれば、ペースト状樹脂マトリック
スをその硬化開始温度以下に保持して脱泡を行うことに
より、内部に気泡を殆ど含まない有機厚膜素子を得るこ
とが可能となるため、オーバーコート印刷、プレス打抜
き加工等の外部応力あるいは、半田付け、リフロー炉投
入等の熱衝撃等に対する耐クラック性、基板との密着性
に優れた有機厚膜抵抗体を得ることができ、また、抵抗
値ばらつきの少ない有機厚膜抵抗体を得ることができ
る。The resistance value was measured, and the variation in resistance value within the substrate and the variation in resistance value as a whole were calculated by the following formulas. The results are shown in Table 2. As can be seen from this table, the resistance variation of the resistors manufactured according to Example 1 or Example 2 was reduced as compared with the comparative example. (Effects of the Invention) As described in detail above, the method for producing an organic thick film resistor according to the present invention includes: a coating step of applying a paste resin matrix for an organic thick film resistor; It is provided with a defoaming step of keeping the temperature below the curing start temperature to eliminate bubbles from the coating film, an initial curing step of initially curing the coating film with far infrared rays, and a curing step of further heating and curing. A method for manufacturing a characteristic organic thick film resistor. " Therefore, according to the present invention, it is possible to obtain an organic thick film element containing almost no bubbles inside by performing defoaming while maintaining the paste-like resin matrix at a temperature below its curing start temperature. It is possible to obtain an organic thick film resistor that is excellent in crack resistance against external stress such as coat printing, press punching, etc., or thermal shock such as soldering, charging into a reflow furnace, etc., and adhesion to the substrate. An organic thick film resistor with less variation in value can be obtained.
Claims (2)
ックスを塗布する塗布工程と、前記ペースト状樹脂マト
リックスをその硬化開始温度以下に保持して塗布膜より
気泡を排除する脱泡工程と、前記塗布膜を遠赤外線によ
り初期硬化する初期硬化工程と、さらに加熱して硬化す
る硬化工程とを備えたことを特徴とする有機厚膜抵抗体
の製造方法。1. A coating step of applying a paste-like resin matrix for an organic thick film resistor, and a defoaming step of keeping the paste-like resin matrix at a temperature below its curing start temperature to eliminate bubbles from the coating film. A method of manufacturing an organic thick film resistor, comprising an initial curing step of initially curing the coating film with far infrared rays, and a curing step of further heating and curing.
ことを特徴とする有機厚膜抵抗体の製造方法。2. The method for manufacturing an organic thick film resistor, wherein the defoaming step is performed at 35 to 60 ° C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1197439A JPH0748405B2 (en) | 1989-07-29 | 1989-07-29 | Method for manufacturing organic thick film resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1197439A JPH0748405B2 (en) | 1989-07-29 | 1989-07-29 | Method for manufacturing organic thick film resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0362502A JPH0362502A (en) | 1991-03-18 |
| JPH0748405B2 true JPH0748405B2 (en) | 1995-05-24 |
Family
ID=16374528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1197439A Expired - Lifetime JPH0748405B2 (en) | 1989-07-29 | 1989-07-29 | Method for manufacturing organic thick film resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0748405B2 (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57136318A (en) * | 1981-02-17 | 1982-08-23 | Fujitsu Ltd | Method of mounting condenser |
| JPS58101488A (en) * | 1981-12-11 | 1983-06-16 | 北陸電気工業株式会社 | Method of drying printed resistor |
| JPS63275102A (en) * | 1987-05-07 | 1988-11-11 | Aisin Seiki Co Ltd | Resistance value adjusting method of variable resistor |
-
1989
- 1989-07-29 JP JP1197439A patent/JPH0748405B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0362502A (en) | 1991-03-18 |
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