JPH0748486B2 - Method and apparatus for resist ashing treatment under reduced pressure - Google Patents
Method and apparatus for resist ashing treatment under reduced pressureInfo
- Publication number
- JPH0748486B2 JPH0748486B2 JP62045233A JP4523387A JPH0748486B2 JP H0748486 B2 JPH0748486 B2 JP H0748486B2 JP 62045233 A JP62045233 A JP 62045233A JP 4523387 A JP4523387 A JP 4523387A JP H0748486 B2 JPH0748486 B2 JP H0748486B2
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- processing
- sample
- processing chamber
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/006—Processes utilising sub-atmospheric pressure; Apparatus therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は減圧下での表面処理方法および装置に係り、特
に試料を温度制御して処理するものに好適な減圧下での
レジスト灰化処理方法および装置に関するものである。Description: TECHNICAL FIELD The present invention relates to a surface treatment method and apparatus under reduced pressure, and particularly to a resist ashing treatment under reduced pressure suitable for treating a sample while controlling its temperature. A method and apparatus.
従来、試料の処理速度を向上させるための方法として、
試料の温度を上げて処理するやり方があり、この試料を
加温するやり方として、特公昭54−41552号，特公昭57
−19567号等のように、プラズマを加温して試料温度を
上げたり、マイクロ波で試料台を加温して試料を昇温し
たりするものがあった。Conventionally, as a method for improving the processing speed of a sample,
There is a method of increasing the temperature of the sample for processing. As a method of heating this sample, Japanese Patent Publication Nos. 54-41552 and 57-57
Some of them, such as No. 19567, heat the plasma to raise the sample temperature, or heat the sample stage by microwaves to raise the temperature of the sample.
上記従来技術は昇温速度の点について配慮されておら
ず、前者は加温したプラズマにより試料を昇温するよう
になっているが、処理室内が低圧域になるに従い熱の伝
導が悪くなり、試料の昇温速度が遅くなるという問題が
あった。また、後者はマイクロ波によって試料台を加温
して試料を昇温するようにしているが、試料の昇温速度
の点については論じられていない。このように、前者お
よび後者は試料の昇温速度について配慮されておらず、
また、試料の昇温と処理とが同時に行われており、昇温
の初期においては処理速度か遅く、総合的に処理速度が
遅くなるという問題があった。The above-mentioned conventional technology does not consider the point of temperature rising rate, the former is designed to heat the sample by heated plasma, but heat conduction deteriorates as the processing chamber becomes a low pressure region, There is a problem that the temperature rising rate of the sample becomes slow. In the latter, the microwave is used to heat the sample stage to raise the temperature of the sample, but the temperature rising rate of the sample is not discussed. In this way, the former and the latter do not consider the heating rate of the sample,
Further, the sample is heated and treated at the same time, and there is a problem that the treatment speed is slow in the initial stage of the temperature rise, and the treatment speed is generally slow.
また、後者は試料台を加温するために高電力のマイクロ
板を印加する必要があり、この高電力のマイクロ波によ
って発生するプラズマが試料にダメージを与えるという
問題があった。In the latter case, it is necessary to apply a high-power microwave plate to heat the sample table, and there is a problem that plasma generated by this high-power microwave damages the sample.
本発明の目的は、試料の総合的な処理時間を短縮するこ
とのできる減圧下でのレジスト灰化処理方法および装置
を提供することにある。An object of the present invention is to provide a method and an apparatus for resist ashing treatment under reduced pressure that can shorten the total treatment time of a sample.
上記目的は、処理圧力よりも低い圧力に真空排気された
後記処理室に試料を搬入する手段と、該搬入された試料
を前記処理室内部の加熱された支持台に載置し、試料の
処理前に該処理室内を昇圧する加圧手段と、該昇圧によ
り前記処理室内に載置された前記試料を所定の温度に昇
温する温度制御手段と、該昇温により前記試料が所定温
度に到達後、前記処理室内の圧力を排気し所定の処理圧
力に減圧する圧力制御手段と、前記試料を前記減圧され
た所定の処理圧力下でレジストの灰化処理を行う処理室
とを具備した装置により、処理圧力よりも低い圧力に真
空排気された処理室に試料を搬入し、試料を加熱された
支持台へ載置する工程と、前記試料の処理前に処理ガス
を処理室内に導入し、該処理室内を昇圧する工程と、該
昇圧された前記処理室内で前記試料の温度を昇温する工
程と、前記試料が所定温度に到達後前記処理室内を所定
の処理圧力に減圧して、該減圧下でレジストの灰化処理
を行うことにより達成される。The above-mentioned object is a means for loading a sample into a processing chamber described below that has been evacuated to a pressure lower than the processing pressure, and mounting the loaded sample on a heated support table inside the processing chamber to process the sample. Previously, pressurizing means for increasing the pressure in the processing chamber, temperature control means for increasing the temperature of the sample placed in the processing chamber to a predetermined temperature by the pressure increase, and the temperature of the sample reaching the predetermined temperature by the temperature increase. After that, by an apparatus equipped with a pressure control means for exhausting the pressure in the processing chamber to reduce the pressure to a predetermined processing pressure, and a processing chamber for performing the ashing process of the resist under the reduced predetermined processing pressure of the sample. The step of loading the sample into a processing chamber that is evacuated to a pressure lower than the processing pressure and placing the sample on a heated support table, and introducing a processing gas into the processing chamber before processing the sample, The step of boosting the pressure in the processing chamber, and the step of boosting the pressure. It is achieved by raising the temperature of the sample in a chamber, and reducing the pressure in the processing chamber to a predetermined processing pressure after the sample reaches a predetermined temperature, and performing the ashing process of the resist under the reduced pressure. .
加圧手段によって試料を処理する前に処理室内を昇圧
し、温度制御手段によって処理室内の試料の温度を制御
する。これにより、処理室内のガスを媒体として温度制
御手段の熱が試料に伝わり易く、速く試料の温度が所定
温度に達する。試料の温度が所定温度に達した後は、圧
力制御手段によって所定の圧力まで減圧して処理を行
う。これによって、試料は所定速度になっているので処
理速度が速く、所定の処理を速く終わることができ、試
料の総合的な処理時間を短縮できる。The pressure in the processing chamber is increased before the sample is processed by the pressurizing means, and the temperature of the sample in the processing chamber is controlled by the temperature control means. As a result, the heat of the temperature control means is easily transferred to the sample using the gas in the processing chamber as a medium, and the temperature of the sample reaches the predetermined temperature quickly. After the temperature of the sample reaches a predetermined temperature, the pressure is reduced to a predetermined pressure by the pressure control means and the treatment is performed. As a result, the sample is at a predetermined speed, so that the processing speed is fast and the predetermined processing can be completed quickly, and the total processing time of the sample can be shortened.
以下、本発明の一実施例を第１図〜第５図により説明す
る。An embodiment of the present invention will be described below with reference to FIGS.
第１図は減圧下での表面処理装置として、この場合、O2
ガスによるレジストの灰化装置を示す。Figure 1 shows a surface treatment device under reduced pressure, in this case O 2
The ashing apparatus of the resist by gas is shown.
処理室１の上部の開口部に金網５を設け、金網５の上部
に石英製の放電管２を設置し、放電部６を形成する。放
電管２の外側で処理室１の上部にAl製の導波管３を設
け、導波管３の端部にマグネトロン４を設置する。処理
室１の下部を貫通してホットプレート７が処理室１内に
設置され、試料であるウェハ18がホットプレート７に載
置される。この場合、ホットプレート７が温度制御手段
であり、ホットプレート７内にヒータを有し、図示しな
い制御装置によって温度コントロールされる。ホットプ
レート７の中央にはウェハ上下装置８が設置される。A wire mesh 5 is provided in an opening in the upper part of the processing chamber 1, and a quartz discharge tube 2 is installed on the wire mesh 5 to form a discharge part 6. A waveguide 3 made of Al is provided outside the discharge tube 2 in the upper part of the processing chamber 1, and a magnetron 4 is installed at the end of the waveguide 3. A hot plate 7 is installed in the processing chamber 1 so as to penetrate the lower portion of the processing chamber 1, and a wafer 18 as a sample is placed on the hot plate 7. In this case, the hot plate 7 is the temperature control means, the hot plate 7 has a heater, and the temperature is controlled by a controller (not shown). A wafer elevating device 8 is installed at the center of the hot plate 7.
また、処理室１の側壁に設けられたゲートバルブ９を介
して予備室10が取付けられ、予備室10内には搬送装置11
が設けられる。放電部６には、マスフローコントローラ
13を介して、処理ガスであるO2ガスの供給源12がつなが
れ、処理室１の下部より、コントロールバルブ16を介し
て、真空ポンプ17までの真空排気系が設けられている。
処理室１には真空計15が取付けられている。この場合、
圧力制御手段は真空ポンプ17,コントロールバルブ16,真
空計15および、真空計15からの信号を入力しコントロー
ルバルブ16を制御する制御装置（図示省略）から成る。Further, a preliminary chamber 10 is attached via a gate valve 9 provided on the side wall of the processing chamber 1, and a transfer device 11 is installed in the preliminary chamber 10.
Is provided. The discharge unit 6 includes a mass flow controller.
A supply source 12 of O 2 gas, which is a processing gas, is connected via 13 and a vacuum exhaust system from the lower part of the processing chamber 1 to a vacuum pump 17 via a control valve 16 is provided.
A vacuum gauge 15 is attached to the processing chamber 1. in this case,
The pressure control means is composed of a vacuum pump 17, a control valve 16, a vacuum gauge 15, and a control device (not shown) that inputs a signal from the vacuum gauge 15 and controls the control valve 16.
動作としては以下のようになる。処理室１内は、コント
ロールバルブ16を全開状態にされ、真空ポンプ17により
処理圧力よりも相当低い圧力（例えば0.1Torr以下）に
真空排気され、また、予備室10も図示しない真空ポンプ
により同様に真空排気された状態で、ゲートバルブ９が
開かれ、ウェハ18が搬送装置11とウェハ上下装置８とに
より１枚毎搬出入される。処理室１内に搬入されたウェ
ハ18は、200〜300℃に加熱されたホットプレート７に載
置される。The operation is as follows. In the processing chamber 1, the control valve 16 is fully opened, and the vacuum pump 17 evacuates the processing chamber 1 to a pressure considerably lower than the processing pressure (for example, 0.1 Torr or less). In the vacuum exhausted state, the gate valve 9 is opened, and the wafers 18 are loaded and unloaded one by one by the transfer device 11 and the wafer up-down device 8. The wafer 18 carried into the processing chamber 1 is placed on the hot plate 7 heated to 200 to 300 ° C.
その後ゲートバルブ９が閉じられ、マスフローコントロ
ーラ13により最大流量（例えば1Nl/min）に制御されたO
2ガスが導入されると共にコントロールバルブ16は全閉
にされる。真空計15で測定される圧力は、処理室１およ
び放電部６の容積空間（例えば本発明の場合約7l）がマ
スフローコントローラ13の流量による圧力上昇率（例え
ば、約1.8Torr/sec）で昇圧し所定の圧力（約６秒で10T
orr）になる。このように、この場合の加圧手段はO2ガ
スの供給源12,マスフローコントローラ13,コントロール
バルブ16および、マスフローコントローラ13とコントロ
ールバルブ16を制御する制御装置（図示省略）から成
る。After that, the gate valve 9 was closed, and the mass flow controller 13 controlled the maximum flow rate (eg, 1 Nl / min) O
2 Gas is introduced and the control valve 16 is fully closed. The pressure measured by the vacuum gauge 15 is increased at a pressure increase rate (for example, about 1.8 Torr / sec) in the volume space of the processing chamber 1 and the discharge unit 6 (for example, about 7 l in the case of the present invention) due to the flow rate of the mass flow controller 13. Specified pressure (10T in about 6 seconds)
orr). As described above, the pressurizing means in this case includes the O 2 gas supply source 12, the mass flow controller 13, the control valve 16, and the control device (not shown) that controls the mass flow controller 13 and the control valve 16.
処理室１内の圧力が所定圧力付近になれば、マスフロー
コントローラ13の流量をほぼ零とし、昇圧した所定圧力
を２秒程度保持する。次にコントロールバルブ16を全開
にし、急速排気し、真空計15の出力が処理圧力（例えば
1Torr）付近になれば、O2ガス12を所定の流量にマスフ
ローコントローラ13で制御（例えば0.6Nl/min）すると
共に、コントロールバルブ16も所定の開度に設定し処理
圧力状態とする。When the pressure in the processing chamber 1 becomes close to the predetermined pressure, the flow rate of the mass flow controller 13 is set to almost zero, and the increased predetermined pressure is maintained for about 2 seconds. Next, the control valve 16 is fully opened to evacuate rapidly, and the output of the vacuum gauge 15 is set to the processing pressure (eg
1 Torr), the O 2 gas 12 is controlled to a predetermined flow rate by the mass flow controller 13 (for example, 0.6 Nl / min), and the control valve 16 is also set to a predetermined opening to bring the processing pressure state.
その後マグネトロン４により、マイクロ波を発振し、導
波管３を介して放電管２内にマイクロ波電力を供給する
とともに、処理室１に接地された金網５でマイクロ波を
反射させ、放電管２内と金網５で囲まれた放電部６でプ
ラズマを発生させる。放電部６とウェハ18を離すことに
より、ウェハ18には化学的に活性なフリーラジカルが主
体に供給され、これにより、ダメージの少ないレジスト
の灰化処理が行われる。処理が終了すれば、処理室１お
よび予備室10を前記した圧力状態にし、ゲートバルブ９
を開きウェハ18を搬出する。以下、各ウェハ毎に上記処
理が繰り返えされる。After that, the magnetron 4 oscillates microwaves to supply microwave power into the discharge tube 2 through the waveguide 3, and at the same time, the microwave is reflected by the wire net 5 grounded in the processing chamber 1 to discharge the microwaves. Plasma is generated in the discharge part 6 surrounded by the wire net 5 and the inside. By separating the discharge part 6 from the wafer 18, chemically active free radicals are mainly supplied to the wafer 18, whereby ashing treatment of the resist with little damage is performed. When the processing is completed, the processing chamber 1 and the preliminary chamber 10 are brought to the above-mentioned pressure state, and the gate valve 9
And the wafer 18 is unloaded. Hereinafter, the above process is repeated for each wafer.
次に、O2ガス圧力に対するウェハ載置部の加熱されたホ
ットプレート７とウェハ18間の熱移動率（単位面積，単
位温度当りの熱伝達量:W/cm2・deg）を第２図に示す。
第２図の曲線の間のハッチングの範囲は、ウェハ18のば
らつきによりホットプレート７との間の隙間が変わり値
がばらついたものである。このように、熱移動率は1Tor
r前後の処理圧力域では、10Torr以上の圧力域に比べて
相当低い。これはウェハ18とホットプレート７間の機械
的接触が点でしかなく固体間の熱伝導が、その間のガス
体による熱伝導よりも僅少で、ガス体による熱伝導によ
る影響が大きいためであり、ガス体の熱伝導は圧力によ
り影響を受け、処理圧力が熱伝導の小さい圧力領域にあ
るためである。Next, the heat transfer rate (heat transfer amount per unit area and unit temperature: W / cm 2 · deg) between the heated hot plate 7 of the wafer mounting portion and the wafer 18 with respect to the O 2 gas pressure is shown in FIG. Shown in.
The hatching range between the curves in FIG. 2 is such that the gap with the hot plate 7 changes due to the variation of the wafer 18, and the value varies. Thus, the heat transfer rate is 1 Tor
In the processing pressure range around r, it is considerably lower than the pressure range above 10 Torr. This is because the mechanical contact between the wafer 18 and the hot plate 7 is only a point, and the heat conduction between the solids is smaller than the heat conduction by the gas body between them, and the heat conduction by the gas body has a large influence. This is because the heat conduction of the gas body is affected by the pressure, and the processing pressure is in the pressure region where the heat conduction is small.
このため、熱移動率に反比例するウェハの加熱の時定数
が1Torr前後の処理圧力では大きくなるので、従来のよ
うに処理圧力のままで昇圧する方法では、第５図に示す
ようにゆるやかなウェハの温度上昇曲線となる。これに
対し本発明のように、処理室１内を昇圧しあらかじめウ
ェハを加熱して処理する方法にすれば、第４図のように
急速にウェハ温度が上昇する温度曲線となり、速く処理
温度に達して、処理速度が速くなる。For this reason, the time constant of heating the wafer, which is inversely proportional to the heat transfer rate, becomes large at a processing pressure of about 1 Torr. Therefore, in the conventional method of increasing the processing pressure as it is, a gentle wafer as shown in FIG. It becomes the temperature rise curve of. On the other hand, if the method of heating the wafer in advance by heating the inside of the processing chamber 1 as in the present invention is used for the processing, a temperature curve in which the wafer temperature rises rapidly as shown in FIG. Reached, the processing speed becomes faster.
これは、本実施例のようにフリーラジカルが主体の反応
処理の場合、第３図のようにウェハの温度が上昇するに
つれてレジストの灰化処理速度が増加する。一般にアレ
ーニウスの経験式で知られるように化学反応の速度が反
応温度の増加と共に増大（速度＝定数×E/RT（一活性化
エネルギ／気体定数×絶対温度））。This is because in the case of the reaction process mainly composed of free radicals as in this embodiment, the ashing process speed of the resist increases as the temperature of the wafer rises as shown in FIG. Generally, as known from Arrhenius' empirical formula, the rate of chemical reaction increases with the increase of reaction temperature (rate = constant x E / RT (one activation energy / gas constant x absolute temperature)).
以上、本一実施例によれば、ウェハ18の処理前に処理室
１内の圧力を上げることにより、ウェハ18を急速に昇温
でき、その後処理室１内の圧力を処理圧力に戻し処理を
行うようにしているので、ウェハ18の処理速度が向上
し、総合的な処理時間を短縮することができる。As described above, according to this embodiment, the wafer 18 can be rapidly heated by increasing the pressure in the processing chamber 1 before the processing of the wafer 18, and then the pressure in the processing chamber 1 is returned to the processing pressure and the processing is performed. Since the processing is performed, the processing speed of the wafer 18 can be improved and the total processing time can be shortened.
なお、本一実施例ではウェハの温度が所定温度に達する
時点を、昇圧した圧力状態の保持時間で管理するように
しているが、ウェハの温度を赤外線温度計等によって検
出しても良い。ウェハ温度を直接検出すれば、ウェハ裏
面とホットプレート上面との間の隙間のばらつき等によ
るウェハ昇温のばらつきを管理できる。In this embodiment, the time when the temperature of the wafer reaches the predetermined temperature is managed by the holding time of the increased pressure state, but the temperature of the wafer may be detected by an infrared thermometer or the like. By directly detecting the wafer temperature, it is possible to manage variations in the temperature rise of the wafer due to variations in the gap between the back surface of the wafer and the top surface of the hot plate.
また、加圧手段として、処理室１とマスフローコントロ
ーラ13との間にバルブおよびバッファタンクを設け、バ
ッファタンクに処理室１と放電部６とを所定圧力に昇圧
可能なガス量を溜めておき、バルブを開いて一挙に昇圧
するようにしても良い。このようにすれば、昇圧時間が
さらに短縮される。As a pressurizing means, a valve and a buffer tank are provided between the processing chamber 1 and the mass flow controller 13, and a gas amount capable of raising the processing chamber 1 and the discharge part 6 to a predetermined pressure is stored in the buffer tank. The valve may be opened to boost the pressure all at once. With this, the boosting time is further shortened.
また、本一実施例は処理室内を昇圧後、所定の処理圧力
に戻しているが、昇圧範囲内でウェハの処理が可能であ
れば、昇圧したまま処理を行っても良い。この場合は、
処理室内の圧力を処理圧力に戻す時間がなくなり、さら
に時間を短縮できる。In this embodiment, the pressure in the processing chamber is raised and then returned to the predetermined processing pressure. However, if the wafer can be processed within the boosting range, the processing may be performed while the pressure is increased. in this case,
The time for returning the pressure in the processing chamber to the processing pressure is eliminated, and the time can be further shortened.
また、処理室内を昇圧しウェハを昇温した後、ウェハ上
下装置によってウェハを上昇させて、レジストの灰化処
理を行えば、ウェハ裏面もクリーニングできる。Further, the back surface of the wafer can be cleaned by raising the pressure in the processing chamber to raise the temperature of the wafer and then raising the wafer by the wafer elevating device to ash the resist.
また、本一実施例はレジストの灰化装置を例に述べた
が、CVD装置やエッチング装置等にも適用できることは
言うまでもない。また、本一実施例は、処理室内を昇圧
しウェハ温度を昇温させるようになっているが、ウェハ
温度を下げる場合にも適用できる。ウェハ温度を下げる
場合、すなわち、ウェハの処理前に所定温度まで温度降
下させる場合や、ウェハの処理後に加熱されたウェハを
冷却する場合等がある。Further, the present embodiment has been described by taking the resist ashing apparatus as an example, but it goes without saying that the present invention can be applied to a CVD apparatus, an etching apparatus and the like. Further, the present embodiment is designed to raise the temperature of the wafer by raising the pressure in the processing chamber, but it can also be applied to the case of lowering the temperature of the wafer. There are cases where the wafer temperature is lowered, that is, when the temperature is lowered to a predetermined temperature before the wafer is processed, and when the heated wafer is cooled after the wafer is processed.
さらに、本一実施例はマイクロ波を使ってプラズマを発
生させる装置について述べたが、減圧下で処理を行うよ
うな処理室を有するもの、例えば平行平板型電極構造の
装置等であっても良い。Further, although the one embodiment has described the apparatus for generating plasma by using microwaves, an apparatus having a processing chamber for performing processing under reduced pressure, for example, an apparatus having a parallel plate type electrode structure may be used. .
本発明によれば、減圧下でレジスト灰化処理される試料
の総合的な処理時間を短縮することができるという効果
ある。According to the present invention, there is an effect that it is possible to shorten the total processing time of a sample which is subjected to resist ashing treatment under reduced pressure.
第１図は本発明の一実施例である減圧下での表面処理装
置を示す構成図、第２図は処理室内の圧力に対するホッ
トプレートに載置したウェハへの熱移動率を示す図、第
３図はウェハ温度に対するレジストの灰化速度を示す
図、第４図は本発明の処理方法による処理圧力，ウェハ
温度および処理量の時間変化を示す図、第５図は従来の
処理方法による処理圧力，ウェハ温度および処理量の時
間変化を示す図である。 １……処理室、７……ホットプレート、12……O2ガスの
供給源、13……マスフローコントローラ、15……真空
計、16……コントロールバルブ、17……真空ポンプ、18
……ウェハFIG. 1 is a configuration diagram showing a surface treatment apparatus under reduced pressure which is an embodiment of the present invention, and FIG. 2 is a diagram showing a heat transfer rate to a wafer placed on a hot plate with respect to a pressure in a treatment chamber. FIG. 3 is a diagram showing the ashing rate of the resist with respect to the wafer temperature, FIG. 4 is a diagram showing the changes over time in the treatment pressure, wafer temperature and treatment amount by the treatment method of the present invention, and FIG. 5 is a treatment by the conventional treatment method. It is a figure which shows the time change of a pressure, a wafer temperature, and a processing amount. 1 ... Processing chamber, 7 ... Hot plate, 12 ... O 2 gas supply source, 13 ... Mass flow controller, 15 ... Vacuum gauge, 16 ... Control valve, 17 ... Vacuum pump, 18
...... Wafer
Claims (2)
処理室に試料を搬入し、試料を加熱された支持台へ載置
する工程と、前記試料の処理前に処理ガスを処理室内に
導入し、該処理室内を昇圧する工程と、 該昇圧された前記処理室内で前記試料の温度を昇温する
工程と、 前記試料が所定温度に到達後前記処理室内を所定の処理
圧力に減圧し、該減圧下でレジストの灰化処理を行う工
程とを有することを特徴とする減圧下でのレジスト灰化
処理方法。1. A step of loading a sample into a processing chamber which is evacuated to a pressure lower than the processing pressure and placing the sample on a heated support, and a processing gas before the processing of the sample into the processing chamber. Introducing and increasing the pressure in the processing chamber, raising the temperature of the sample in the pressure-enhanced processing chamber, and reducing the pressure in the processing chamber to a predetermined processing pressure after the sample reaches a predetermined temperature. And a step of ashing the resist under reduced pressure, the method of ashing the resist under reduced pressure.
後記処理室に試料を搬入する手段と、該搬入された試料
を前記処理室内部の加熱された支持台に載置し、試料の
処理前に該処理室内を昇圧する加圧手段と、該昇圧によ
り前記処理室内に載置された前記試料を所定の温度に昇
温する温度制御手段と、該昇温により前記試料が所定温
度に到達後、前記処理室内の圧力を排気し所定の処理圧
力に減圧する圧力制御手段と、前記試料を前記減圧され
た所定の処理圧力下でレジストの灰化処理を行う処理室
とを具備したことを特徴とする減圧下でのレジスト灰化
処理装置。2. A means for loading a sample into a processing chamber, which has been evacuated to a pressure lower than the processing pressure, and a means for loading the loaded sample on a heated support table inside the processing chamber, A pressurizing unit that pressurizes the processing chamber before processing, a temperature control unit that raises the temperature of the sample placed in the processing chamber to a predetermined temperature by the pressure rising, and the temperature of the sample rises to a predetermined temperature by the temperature rising. After reaching, the pressure control means for exhausting the pressure in the processing chamber to reduce the pressure to a predetermined processing pressure, and a processing chamber for performing the ashing process of the resist on the sample under the reduced predetermined processing pressure are provided. An apparatus for ashing resist ash under reduced pressure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62045233A JPH0748486B2 (en) | 1987-03-02 | 1987-03-02 | Method and apparatus for resist ashing treatment under reduced pressure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62045233A JPH0748486B2 (en) | 1987-03-02 | 1987-03-02 | Method and apparatus for resist ashing treatment under reduced pressure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63214337A JPS63214337A (en) | 1988-09-07 |
| JPH0748486B2 true JPH0748486B2 (en) | 1995-05-24 |
Family
ID=12713543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62045233A Expired - Lifetime JPH0748486B2 (en) | 1987-03-02 | 1987-03-02 | Method and apparatus for resist ashing treatment under reduced pressure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0748486B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2744935B2 (en) * | 1989-12-04 | 1998-04-28 | 東京エレクトロン株式会社 | Processing equipment |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4535834A (en) * | 1984-05-02 | 1985-08-20 | Varian Associates, Inc. | Method and apparatus for controlling thermal transfer in a cyclic vacuum processing system |
-
1987
- 1987-03-02 JP JP62045233A patent/JPH0748486B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63214337A (en) | 1988-09-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100811906B1 (en) | Processing method and processing device | |
| US20090317565A1 (en) | Plasma cvd equipment | |
| JP2011049570A (en) | Substrate processing apparatus, and semiconductor device manufacturing method | |
| US20220005678A1 (en) | Substrate processing apparatus, reflector and method of manufacturing semiconductor device | |
| US20220262604A1 (en) | Substrate processing apparatus, substrate processing method, method of manufacturing semiconductor device and non-transitory computer-readable recording medium | |
| JP2869384B2 (en) | Plasma processing method | |
| US11145491B2 (en) | Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium | |
| TWI831956B (en) | Cleaning method and plasma processing apparatus | |
| KR20030086588A (en) | Single wafer processing method and system for processing semiconductor | |
| JPH0748486B2 (en) | Method and apparatus for resist ashing treatment under reduced pressure | |
| JP6012933B2 (en) | Substrate processing apparatus, semiconductor device manufacturing method, and substrate processing method | |
| TWI818230B (en) | Plasma treatment device and plasma treatment method | |
| JPH01209722A (en) | Heat treating method | |
| JPH0831753A (en) | VHF plasma processing method and apparatus | |
| JPH1015378A (en) | Pressure regulation method for vacuum processing chamber | |
| JP2004022821A (en) | Dry etching method and apparatus | |
| JPH0888095A (en) | Plasma processing apparatus and control method thereof | |
| JP2777085B2 (en) | Dry etching equipment | |
| US20250210317A1 (en) | Substrate processing method, method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus | |
| JP4027199B2 (en) | Substrate processing equipment | |
| JPS61131451A (en) | Dry etching apparatus | |
| JP2005056919A (en) | Substrate processing equipment | |
| JPH10321607A (en) | Plasma processing equipment | |
| JPH0529265A (en) | Plasma assing device | |
| JPH07142402A (en) | Plasma processing method and apparatus for implementing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |