JPH0750720B2 - Bonding wire and semiconductor device having the same - Google Patents
Bonding wire and semiconductor device having the sameInfo
- Publication number
- JPH0750720B2 JPH0750720B2 JP1290338A JP29033889A JPH0750720B2 JP H0750720 B2 JPH0750720 B2 JP H0750720B2 JP 1290338 A JP1290338 A JP 1290338A JP 29033889 A JP29033889 A JP 29033889A JP H0750720 B2 JPH0750720 B2 JP H0750720B2
- Authority
- JP
- Japan
- Prior art keywords
- bonding wire
- wire
- semiconductor device
- view
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/521—Structures or relative sizes of bond wires
- H10W72/522—Multilayered bond wires, e.g. having a coating concentric around a core
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/533—Cross-sectional shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/553—Materials of bond wires not comprising solid metals or solid metalloids, e.g. polymers, ceramics or liquids
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/555—Materials of bond wires of outermost layers of multilayered bond wires, e.g. material of a coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Wire Bonding (AREA)
Description
【発明の詳細な説明】 ［発明の目的］ （産業上の利用分野） 本発明は、半導体素子とリードフレームとを電気的に接
続するボンディングワイヤの形状に特徴を有するボンデ
ィングワイヤおよび半導体装置に関するものである。Description: [Object of the invention] (Field of industrial application) The present invention relates to a bonding wire and a semiconductor device characterized by the shape of a bonding wire for electrically connecting a semiconductor element and a lead frame. Is.
（従来技術） 半導体装置は、そのパッケージの小型化、リードピッチ
の縮小化にともない、耐湿性を向上させることが重点課
題の一つである。(Prior Art) With the miniaturization of the package and the reduction of the lead pitch of the semiconductor device, one of the important issues is to improve the moisture resistance.
樹脂封止される半導体装置の製造に際しては、半導体チ
ップとリードフレームとの間を電気的に接続する手段と
してボンディングワイヤが使用されているが、従来、普
通使用されるボンディングワイヤは、第５図のボンディ
ングワイヤ１のように、その断面は円形であり、またそ
の表面は鏡面状である。なお、ボンディングワイヤの材
質としては、金、アルミニウム合金、銅合金等が実用化
されている。In the manufacture of a resin-sealed semiconductor device, a bonding wire is used as a means for electrically connecting a semiconductor chip and a lead frame. Conventionally, a bonding wire commonly used is shown in FIG. The bonding wire 1 has a circular cross section and its surface is a mirror surface. As the material of the bonding wire, gold, aluminum alloy, copper alloy, etc. have been put into practical use.
しかしながら、円形で鏡面状のボンディングワイヤによ
ってアセンブリされたものを封止樹脂でモールドした場
合、リードフレームあるいはボンディングワイヤとモー
ルド樹脂との密着性が必ずしもよくないから、環境試験
が行われる状態、あるいは装置の使用状態で、水分が、
まずモールド樹脂とリードフレームとの隙間から吸引さ
れ、次にボンディングワイヤの隙間を経由して半導体素
子に到達し、半導体素子を腐蝕させ、あるいは素子特性
を劣化させる恐れがある。このため、最近では、リード
フレームの形状を改善することによって水分の吸入を防
止する考案がなされ実用化されているが、ボンディング
ワイヤに関する工夫はなされていない。However, when a circular mirror-shaped bonding wire assembled with a sealing resin is molded with a sealing resin, the adhesion between the lead frame or the bonding wire and the molding resin is not always good. When used,
First, it may be sucked from the gap between the mold resin and the lead frame, then reach the semiconductor element through the gap of the bonding wire, and may corrode the semiconductor element or deteriorate the element characteristics. For this reason, recently, a device for preventing inhalation of water by improving the shape of the lead frame has been made and put into practical use, but no device for the bonding wire has been made.
（発明が解決しようとする課題） 本発明の目的は、モールド樹脂との密着性を改善するボ
ンディングワイヤ、および水分の吸入による半導体素子
の腐蝕を低減させ、あるいは信頼性を向上させる半導体
装置を提供することである。(Problems to be Solved by the Invention) An object of the present invention is to provide a bonding wire that improves adhesion to a mold resin, and a semiconductor device that reduces corrosion of a semiconductor element due to inhalation of moisture or improves reliability. It is to be.
［発明の構成］ （課題を解決するための手段と作用） 本発明のボンディングワイヤは、断面がほぼ円に相当す
る形状であり、その円の直径がワイヤ長手方向に沿って
ほぼ連続的に変化し外表面にほぼ規則的に反復する凹凸
を有することを特徴とし、本発明の半導体装置は、半導
体チップと、リードフレームと、前記半導体チップに一
端が接続され、他端が前記リードフレームに接続され、
断面がほぼ円に相当する形状であり、その円の直径がワ
イヤの長手方向に沿ってほぼ連続的に変化し外表面にほ
ぼ規則的に反復する凹凸を有するボンディングライヤを
有することを特徴とする。かかる反復凹凸は、ワイヤの
長手方向にのみ形成されるようすること、横断面にのみ
現れるようにすること、又は長手方向断面と横断面の双
方に現れるようにすることができるが、いずれの凹凸で
あってもよい。[Structure of the Invention] (Means and Actions for Solving the Problems) The bonding wire of the present invention has a cross-section having a shape substantially equivalent to a circle, and the diameter of the circle changes substantially continuously along the longitudinal direction of the wire. The semiconductor device of the present invention has a semiconductor chip, a lead frame, and one end connected to the semiconductor chip, and the other end connected to the lead frame. Is
The cross-section has a shape substantially equivalent to a circle, and the diameter of the circle changes substantially continuously along the longitudinal direction of the wire, and the outer surface has a bonding layer having irregularities that repeat substantially regularly. . Such repetitive irregularities can be formed only in the longitudinal direction of the wire, appear only in the transverse section, or appear in both the longitudinal section and the transverse section. May be
ボンディングワイヤの外周面に凹凸があれば、モールド
樹脂との接触面積が大となるうえに、接合面の食いつき
がよくなるので、モールド樹脂との隙間が生じにくくな
る。また封止樹脂と金属ワイヤの間には熱膨張差がある
から、特に長手方向の反復凹凸があれば、樹脂とワイヤ
凸部の間に圧接が生じ、水分の移動が遮断される。If the outer peripheral surface of the bonding wire is uneven, the contact area with the molding resin is large and the bonding surface is well bited, so that a gap with the molding resin is less likely to occur. Further, since there is a difference in thermal expansion between the sealing resin and the metal wire, if there are repeated irregularities in the longitudinal direction in particular, pressure contact will occur between the resin and the wire convex portion, and movement of water will be blocked.
（実施例） 次に図面を参照して本発明の実施例を説明する。(Example) Next, the Example of this invention is described with reference to drawings.
第４図は、本発明に関連する半導体装置の、モールド樹
脂部を除いた要部の断面図である。第４図において、12
はリードフレームのベッド部で、半導体素子13がマウン
ト材14によって搭載され、半導体素子13の電極13aとリ
ードフレームのインナーリード部15とはボンディングワ
イヤ11で接続される。FIG. 4 is a cross-sectional view of the main part of the semiconductor device related to the present invention, excluding the mold resin part. In FIG. 4, 12
Is a bed portion of the lead frame, on which the semiconductor element 13 is mounted by the mount material 14, and the electrode 13a of the semiconductor element 13 and the inner lead portion 15 of the lead frame are connected by the bonding wire 11.
第１図（ａ）および（ｂ）は、第一実施例の半導体装置
に用いられたボンディングワイヤ11の断面図及び正面図
である。ボンディングワイヤ11は断面が円形であるが、
長手方向に規制的に外径が変化したものであり、伸線に
あたって引き出し速度を振動させて得られる。FIGS. 1A and 1B are a sectional view and a front view of a bonding wire 11 used in the semiconductor device of the first embodiment. The bonding wire 11 has a circular cross section,
The outer diameter is regulated in the longitudinal direction and is obtained by vibrating the drawing speed during wire drawing.
第２図（ａ）および（ｂ）は、第二実施例に用いられた
ボンディングワイヤ21の断面図及び正面図である。第２
図（ａ）にみるように、ボンディングワイヤ21の断面は
星形をしており、同図（ｂ）にみるように、凸条21a、
凹条21bは長手方向に平行に形成されている。ボンディ
ングワイヤ21は、星形のダイスにより伸線して得られ
る。FIGS. 2A and 2B are a sectional view and a front view of the bonding wire 21 used in the second embodiment. Second
The bonding wire 21 has a star-shaped cross section as shown in FIG.
The groove 21b is formed parallel to the longitudinal direction. The bonding wire 21 is obtained by drawing with a star-shaped die.
第３図（ａ）および（ｂ）は、第三実施例に使用された
ボンディングワイヤ31を示す断面図及び正面図である。
同図（ａ）にみるように、断面は星形をしているが、同
図（ｂ）にみるように、凸条31a、凹条31bは第二実施例
におけるボンディングワイヤ21と異なって捩られてい
る。ボンディングワイヤ31は、星形のダイスを用いると
ともに引出線に捩りを加えて得られる。3A and 3B are a sectional view and a front view showing the bonding wire 31 used in the third embodiment.
As shown in (a) of the figure, the cross section is star-shaped, but as shown in (b) of the figure, the convex strip 31a and the concave strip 31b are different from the bonding wire 21 in the second embodiment. Has been. The bonding wire 31 is obtained by using a star-shaped die and twisting the lead wire.
［発明の効果］ 本発明のボンディングワイヤおよび半導体装置によれ
ば、ボンディングワイヤの外周面に凹凸があるから、ボ
ンディングワイヤとモールド樹脂との接触面積が広くな
って接合面での食いつきが良くなり、従来、腐蝕や特性
劣化など信頼性の問題が発生しやすかったが、より高品
質の半導体装置を提供することができた。[Advantages of the Invention] According to the bonding wire and the semiconductor device of the present invention, since the outer peripheral surface of the bonding wire has irregularities, the contact area between the bonding wire and the mold resin is widened, and the bite at the bonding surface is improved. Conventionally, reliability problems such as corrosion and deterioration of characteristics were likely to occur, but a higher quality semiconductor device could be provided.
また、別の効果として、ボンディングワイヤの表面積が
増加することにより、単位長当りの表面抵抗が下り、高
周波電流にとって低抵抗値のボンディングワイヤを提供
することができた。Further, as another effect, since the surface area of the bonding wire is increased, the surface resistance per unit length is decreased, and a bonding wire having a low resistance value for high frequency current can be provided.
第１図（ａ）および（ｂ）は本発明の第一実施例に用い
られたボンディングワイヤのそれぞれ断面図と正面図、
第２図（ａ）および（ｂ）は第二実施例に用いられたボ
ンディングワイヤのそれぞれ断面図と正面図、第３図
（ａ）および（ｂ）は第三実施例に用いられたボンディ
ングワイヤのそれぞれ断面図と正面図、第４図は本発明
に関連する半導体装置の要部断面図、第５図は従来の半
導体装置に用いられたボンディングワイヤの斜視図であ
る。 1,11,21,31……ボンディングワイヤ、11a,21a,31a……
凸部、11b,21b,31b……凹部、12,15……装置端子、13…
…半導体素子。1 (a) and 1 (b) are a sectional view and a front view, respectively, of a bonding wire used in the first embodiment of the present invention,
2 (a) and 2 (b) are a sectional view and a front view, respectively, of the bonding wire used in the second embodiment, and FIGS. 3 (a) and 3 (b) are bonding wires used in the third embodiment. FIG. 4 is a sectional view and a front view, respectively, FIG. 4 is a sectional view of an essential part of a semiconductor device relating to the present invention, and FIG. 5 is a perspective view of a bonding wire used in a conventional semiconductor device. 1,11,21,31 …… bonding wire, 11a, 21a, 31a ……
Convex part, 11b, 21b, 31b ... Concave part, 12,15 ... Device terminal, 13 ...
… Semiconductor element.
Claims (2)
円の直径がワイヤの長手方向に沿ってほぼ連続的に変化
し外表面にほぼ規則的に反復する凹凸を有することを特
徴とするボンディングワイヤ。1. A cross-section having a shape substantially corresponding to a circle, the diameter of the circle changing substantially continuously along the longitudinal direction of the wire, and the outer surface of the wire having irregularities which repeat substantially regularly. Bonding wire to do.
半導体チップに一端が接続され、他端が前記リードフレ
ームに接続され、断面がほぼ円に相当する形状であり、
その円の直径がワイヤの長手方向に沿ってほぼ連続的に
変化し外表面にほぼ規則的に反復する凹凸を有するボン
ディングワイヤを有することを特徴とする半導体装置。2. A semiconductor chip, a lead frame, one end of which is connected to the semiconductor chip, and the other end of which is connected to the lead frame, the cross section of which has a shape substantially corresponding to a circle,
A semiconductor device comprising: a bonding wire having a circle whose diameter changes substantially continuously along the longitudinal direction of the wire and whose outer surface has irregularities that repeat substantially regularly.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1290338A JPH0750720B2 (en) | 1989-11-08 | 1989-11-08 | Bonding wire and semiconductor device having the same |
| US07/772,593 US5177590A (en) | 1989-11-08 | 1991-10-04 | Semiconductor device having bonding wires |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1290338A JPH0750720B2 (en) | 1989-11-08 | 1989-11-08 | Bonding wire and semiconductor device having the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03151648A JPH03151648A (en) | 1991-06-27 |
| JPH0750720B2 true JPH0750720B2 (en) | 1995-05-31 |
Family
ID=17754766
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1290338A Expired - Fee Related JPH0750720B2 (en) | 1989-11-08 | 1989-11-08 | Bonding wire and semiconductor device having the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0750720B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3602453B2 (en) | 2000-08-31 | 2004-12-15 | Ｎｅｃエレクトロニクス株式会社 | Semiconductor device |
| JP2009088132A (en) * | 2007-09-28 | 2009-04-23 | Tanaka Electronics Ind Co Ltd | Bonding wire |
| JP5546670B1 (en) * | 2013-06-13 | 2014-07-09 | 田中電子工業株式会社 | Structure of coated copper wire for ultrasonic bonding |
| CN110729207B (en) * | 2019-10-12 | 2021-07-13 | 闳康技术检测(上海)有限公司 | A bonding method for encapsulation and wire bonding |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59211254A (en) * | 1983-05-17 | 1984-11-30 | Nec Corp | Bonding wire |
| JPS6236550U (en) * | 1985-08-22 | 1987-03-04 | ||
| JPS6364332A (en) * | 1986-09-05 | 1988-03-22 | Toshiba Corp | Fine bonding wire for semiconductor device |
-
1989
- 1989-11-08 JP JP1290338A patent/JPH0750720B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03151648A (en) | 1991-06-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |