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JPH075389B2 - Silicon nitride sintered body - Google Patents
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JPH075389B2 - Silicon nitride sintered body - Google Patents

Silicon nitride sintered body

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Publication number
JPH075389B2
JPH075389B2 JP62150311A JP15031187A JPH075389B2 JP H075389 B2 JPH075389 B2 JP H075389B2 JP 62150311 A JP62150311 A JP 62150311A JP 15031187 A JP15031187 A JP 15031187A JP H075389 B2 JPH075389 B2 JP H075389B2
Authority
JP
Japan
Prior art keywords
silicon nitride
sintered body
phase
sio
mgo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP62150311A
Other languages
Japanese (ja)
Other versions
JPS63315569A (en
Inventor
仁一 安達
香一 今尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
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Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Priority to JP62150311A priority Critical patent/JPH075389B2/en
Publication of JPS63315569A publication Critical patent/JPS63315569A/en
Publication of JPH075389B2 publication Critical patent/JPH075389B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は機械的強度、耐熱衝撃性、耐摩耗性、耐酸化性
に優れた窒化珪素焼結体に関するものである。
TECHNICAL FIELD The present invention relates to a silicon nitride sintered body having excellent mechanical strength, thermal shock resistance, wear resistance, and oxidation resistance.

(従来の技術) 窒化珪素は、機械的強度、耐熱衝撃性、耐摩耗性、耐酸
化性などの点に優れているため近年ガスタービン部品な
ど高温構造材料として注目されている。しかしながら、
窒化珪素は焼結性に乏しく、単味では焼結し難いため高
密度、高強度な窒化珪素焼結体を得ることは一般には困
難である。
(Prior Art) Since silicon nitride is excellent in mechanical strength, thermal shock resistance, wear resistance, oxidation resistance and the like, it has recently attracted attention as a high temperature structural material such as a gas turbine component. However,
Since silicon nitride has poor sinterability and is difficult to sinter by itself, it is generally difficult to obtain a high-density and high-strength silicon nitride sintered body.

従来の窒化珪素焼結体の製造法としては、珪素を窒化さ
せつつ焼結させるいわゆる反応焼結法と、窒化珪素粉末
にMgOなどの焼結助剤を添加してホットプレスする方法
が知られている。しかしながら、前者の反応焼結法では
ほとんど焼成収縮がないため高密度のものは得られず、
したがって高強度の窒化珪素焼結体が得られない欠点が
あった。また後者のホットプレスによる方法では、高密
度、高強度のものは得られるが、製法に伴なう制約から
比較的簡単な形状のものしか製造できず、経済的にも高
価になるという欠点があった。
As a conventional method for producing a silicon nitride sintered body, a so-called reactive sintering method in which silicon is nitrided and sintered, and a method in which a sintering aid such as MgO is added to silicon nitride powder and hot pressing are known. ing. However, in the former reaction sintering method, since there is almost no firing shrinkage, a high density product cannot be obtained,
Therefore, there is a drawback that a high-strength silicon nitride sintered body cannot be obtained. In addition, the latter method by hot pressing can obtain high density and high strength, but has the disadvantage that it can only be manufactured in a relatively simple shape due to the restrictions associated with the manufacturing method, and it is economically expensive. there were.

これらの製造法の他に、本出願人は窒化珪素粉末にBe
O、MgO、SrOのうち少なくとも2種以上、さらに希土類
元素酸化物の1種以上の焼結助剤を添加し、十分混合し
た後成形し、次いで窒化雰囲気あるいは不活性ガス雰囲
気中で焼成する製造法として特公昭55−46997号「窒化
珪素焼結体及びその製造法」を発明した。
In addition to these manufacturing methods, the applicant has begun to use silicon nitride powder in Be
Manufacturing in which at least two or more of O, MgO, and SrO, and one or more sintering aids of rare earth element oxides are added, mixed sufficiently, and then molded, and then fired in a nitriding atmosphere or an inert gas atmosphere As a method, the Japanese Patent Publication No. 55-46997 "Sintered Silicon Nitride and its Manufacturing Method" was invented.

(発明が解決しようとする問題点) 本出願人が先に発明した特公昭55−46997号は、機械的
強度と熱衝撃抵抗の強い高密度の窒化珪素焼結体を提供
するものとして有用であるが、焼結助剤とSiO2からなる
ガラス相中にMgO−SiO2系の結晶相が生成することがあ
り、それが原因で強度のばらつきが生じやすくなること
により良好な耐摩耗性、耐酸化性が得られなかった。
(Problems to be Solved by the Invention) Japanese Patent Publication No. 55-46997 previously invented by the present applicant is useful for providing a high-density silicon nitride sintered body having high mechanical strength and thermal shock resistance. the case, it may MgO-SiO 2 based crystal phase are produced in the glass phase consisting of a sintering aid and SiO 2, it is good abrasion resistance by easily occur variations in strength due No oxidation resistance was obtained.

(問題点を解決するための手段) 本発明の目的は、上述した不具合をなくし、例えば摺動
材や自動車用部品などに使用可能な高強度で優れた耐摩
耗性、耐酸化性を有し、不均一相のない良好な窒化珪素
焼結体を提供するものである。
(Means for Solving Problems) An object of the present invention is to eliminate the above-mentioned problems and to have high strength and excellent wear resistance and oxidation resistance that can be used, for example, in sliding materials and automobile parts. The object of the present invention is to provide a good silicon nitride sintered body having no heterogeneous phase.

本発明の窒化珪素焼結体においては、酸素含有量の多い
ほど、耐酸化性は良好になり、不均一相の発生原因が少
なくなるが、酸素含有量があまり多すぎると粒界相に生
ずるガラス相の量が多くなり、その軟化により高温強度
は低くなる。また、酸素含有量が少なすぎると粒界相に
MgO−SiO2系の結晶相が不均一に発生して、耐摩耗性、
耐酸化性に不具合を生じる原因となる。
In the silicon nitride sintered body of the present invention, the higher the oxygen content, the better the oxidation resistance, and the less the cause of the generation of the heterogeneous phase. However, if the oxygen content is too high, it occurs in the grain boundary phase. The amount of glass phase increases, and the softening thereof reduces the high temperature strength. Also, if the oxygen content is too low, the grain boundary phase
The MgO-SiO 2 system crystal phase is unevenly generated, resulting in wear resistance,
This may cause a problem in oxidation resistance.

したがって、窒化珪素中に含まれる酸素量すなわちSiO2
量は多くても少なすぎても特性に影響をおよぼす。
Therefore, the amount of oxygen contained in silicon nitride, that is, SiO 2
Amounts too high or too low will affect the properties.

本発明は窒化珪素80〜97重量%と、CeO21〜10重量%
と、MgO,SrOを各々0.5〜5重量%と、SiO20.55〜10.5重
量%とを含有する組成よりなり、SiO2/MgOの重量比が1.
1〜2.1である窒化珪素焼結体であって、粒界相に結晶相
を発生させないため、酸素量のコントロールをおこない
焼結体において、SiO2/MgOの重量比が1.1〜2.1となるよ
う窒化珪素焼結体の組成について特定し、高強度と、耐
熱衝撃性、高耐摩耗性、耐酸化性に優れた窒化珪素焼結
体を提供するにある。
The present invention comprises 80 to 97% by weight of silicon nitride and 1 to 10% by weight of CeO 2
If, MgO, and each 0.5 to 5 wt% of SrO, consists composition containing a SiO 2 .55-10.5 wt%, the weight ratio of SiO 2 / MgO is 1.
A silicon nitride sintered body of 1 to 2.1, which does not generate a crystal phase in the grain boundary phase, so the amount of oxygen is controlled so that the weight ratio of SiO 2 / MgO is 1.1 to 2.1. The purpose of the present invention is to specify the composition of a silicon nitride sintered body and to provide a silicon nitride sintered body having high strength and excellent thermal shock resistance, high wear resistance, and oxidation resistance.

本発明の目的とする窒化珪素焼結体の酸素を増加させる
方法としては、SiO2,MgSiO3などの化合物を添加する方
法、原料自体を仮焼して酸化させる方法などが考えられ
るがいずれの方法を使用して製造してもよい。
As a method of increasing oxygen in the silicon nitride sintered body which is the object of the present invention, a method of adding a compound such as SiO 2 or MgSiO 3 or a method of calcination and oxidizing the raw material itself can be considered. It may be manufactured using the method.

一般に窒化珪素にはα相とβ相との2つの結晶構造が存
在することが知られているが、1400℃以上の温度に加熱
するとα相からβ相への転移が始まり、1600℃以上にな
ると転移速度が早くなる。特にCeO2を添加するとこのα
相からβ相への転移が著しく促進される。一方SrOおよ
びMgOは1600℃以上に加熱されるとSi3N4中に微量存在す
るSiO2または焼結助剤として添加された酸化物の酸素と
反応してMgO−SiO2系の結晶または液相を作ると共に、
一部はSi3N4中に固溶して固溶体を作り、この両者の働
きがα相からβ相への転移と同時に起きるため緻密化を
促進し、Si3N4粒子は強固に結合するものである。
It is generally known that silicon nitride has two crystal structures of α phase and β phase, but when it is heated to a temperature of 1400 ° C or higher, the transition from α phase to β phase begins, and it becomes 1600 ° C or higher. Then, the transfer rate becomes faster. Especially when CeO 2 is added, this α
The transition from the β phase to the β phase is significantly promoted. On the other hand, when SrO and MgO are heated to 1600 ° C or higher, they react with the trace amount of SiO 2 present in Si 3 N 4 or the oxygen of the oxide added as a sintering aid to form MgO-SiO 2 crystals or liquids. While making a phase,
Some of them form a solid solution by forming a solid solution in Si 3 N 4 , and the actions of both occur at the same time as the transition from α phase to β phase, which promotes densification, and Si 3 N 4 particles are firmly bonded. It is a thing.

また希土類元素酸化物であるCeO2はSrO,MgOなどと共存
した場合、Si3N4粒子の界面に均一に分布してSiO,MgOの
2成分以上及びSiO2と結合して高融点の液相又は結晶を
作り、窒化珪素の緻密化に極めて効果のあるものであ
る。そして得られた焼結体は非常に微細で、かつ均一な
粒子よりなり、これが本発明による窒化珪素焼結体の緻
密化と高強度化に大きく貢献している。
Moreover, when CeO 2 which is a rare earth element oxide coexists with SrO, MgO, etc., it is uniformly distributed at the interface of Si 3 N 4 particles and is bonded to two or more components of SiO, MgO and SiO 2 and has a high melting point. It is extremely effective in densifying silicon nitride by forming a phase or crystal. The obtained sintered body is composed of very fine and uniform particles, which greatly contributes to the densification and high strength of the silicon nitride sintered body according to the present invention.

本発明において使用する窒化珪素粉末原料は、少なくと
もα相を30%以上含むことが望ましい。その理由は、前
述のように窒化珪素のα相よりβ相への転移が焼結に関
与するため、転移を進め緻密化を充分に行わせるためで
ある。また窒化珪素粉末中の不純物は、高温焼成中に不
純物成分の蒸発が起き、気孔の原因となったり添加成分
と反応して低融点の液相を作り、焼結体の高温特性を著
しく劣化させるため窒化珪素の純度は少なくとも97%以
上であることが望ましい。さらに窒化珪素は焼結性に乏
しいので、原料粒度は細かくし、原料粉末の表面張力を
大きくすることが必要であり、粒度は2ミクロン以下の
微細粒子を用いることが必要である。
The silicon nitride powder raw material used in the present invention preferably contains at least 30% or more of α phase. The reason is that, as described above, the transition from the α phase to the β phase of silicon nitride is involved in the sintering, so that the transition is promoted and the densification is sufficiently performed. Impurities in the silicon nitride powder cause evaporation of impurity components during high-temperature firing, causing pores and reacting with additional components to form a liquid phase with a low melting point, significantly deteriorating the high temperature characteristics of the sintered body. Therefore, it is desirable that the purity of silicon nitride is at least 97% or more. Furthermore, since silicon nitride has poor sinterability, it is necessary to make the raw material grain size fine and increase the surface tension of the raw material powder, and it is necessary to use fine grains having a grain size of 2 microns or less.

次に、添加成分の量が多くなると窒化珪素は緻密化はす
るが、過剰の添加成分が窒化珪素粒子間に多量のガラス
相を形成し高温材料としての特性を著しく損なうので好
ましくない。またMgO,SrOを各々0.5%未満、合計で1%
未満、およびCeO2の合計が1%未満の場合には緻密化が
十分でなく機械的強度も小さい。従ってCeO21〜10重量
%、好ましくは1〜5重量%、MgO,SrOを各々0.5〜5重
量%好ましくは各々1〜4重量%合計で2〜8重量%と
するのが適当である。
Next, when the amount of the additive component increases, the silicon nitride becomes densified, but the excessive additive component forms a large amount of glass phase between the silicon nitride particles and remarkably deteriorates the characteristics as a high temperature material, which is not preferable. Also, MgO and SrO are less than 0.5% each, total 1%
Less than 1% and the total amount of CeO 2 is less than 1%, the densification is not sufficient and the mechanical strength is small. Therefore, it is suitable that CeO 2 is 1 to 10% by weight, preferably 1 to 5% by weight, and MgO and SrO are 0.5 to 5% by weight, preferably 1 to 4% by weight respectively, and 2 to 8% by weight in total.

また焼成温度は高密度焼結体を得るためには1600℃以上
であることが必要であるが1900℃を越えると窒化珪素の
分解が激しくなるため好ましくない。さらに焼成雰囲気
としては窒化珪素の分解、酸化を防止するため、窒素雰
囲気あるいは不活性ガス雰囲気で焼成する必要がある。
Further, the firing temperature needs to be 1600 ° C. or higher in order to obtain a high-density sintered body, but if it exceeds 1900 ° C., the decomposition of silicon nitride becomes severe, which is not preferable. Further, the firing atmosphere needs to be fired in a nitrogen atmosphere or an inert gas atmosphere in order to prevent decomposition and oxidation of silicon nitride.

以下、具体的な実施例にて説明する。Hereinafter, a specific example will be described.

実施例1 平均粒子径が0.5〜0.7μmのα相を90重量%以上含む窒
化珪素と焼結助剤として平均粒子径が各々1.8μmのCeO
2、3.2μmのSrCO3,0.5μmのMgOを用いた。
Example 1 Silicon nitride containing 90% by weight or more of α phase having an average particle size of 0.5 to 0.7 μm and CeO 2 having an average particle size of 1.8 μm as a sintering aid.
2 , SrCO 3 of 3.2 μm and MgO of 0.5 μm were used.

SiO2量すなわち酸素量を増加させる方法として、SiO2
を変化させて添加し、水で湿式粉砕を行った。
As a method of increasing the amount of SiO 2, that is, the amount of oxygen, the amount of SiO 2 was changed and added, and wet grinding was performed with water.

湿式粉砕終了後、スラリーを乾燥し、200kg/cm2の圧力
で60×60×8mmの直方体に成形し、その後2500kg/cm2
圧力で静水圧プレスを行った。得られた成形体はN2雰囲
気中、1750℃、1.5時間の焼成条件で焼成した。得られ
た焼結体は、室温と1000℃においてJISR−1601「ファイ
ンセラミックスの曲げ強さ試験方法」に準ずる四点曲げ
強度を測定した。
After the completion of the wet pulverization, the slurry was dried and molded into a rectangular parallelepiped having a size of 60 × 60 × 8 mm at a pressure of 200 kg / cm 2 , and then hydrostatic pressing was performed at a pressure of 2500 kg / cm 2 . The obtained molded body was fired under N 2 atmosphere at 1750 ° C. for 1.5 hours. The obtained sintered body was measured at room temperature and 1000 ° C. for four-point bending strength in accordance with JIS R-1601 “Test method for bending strength of fine ceramics”.

SiO2/MgO重量比については、窒化珪素焼結体を粉砕して
化学分析をおこない、酸化物の焼結助剤中に含有する酸
素量を全酸素量から差し引き、その差し引いた酸素量を
SiO2に換算し、SiO2/MgO重量比とした。
Regarding the SiO 2 / MgO weight ratio, the silicon nitride sintered body was crushed and subjected to chemical analysis, the oxygen content contained in the oxide sintering aid was subtracted from the total oxygen content, and the subtracted oxygen content was calculated.
It was converted to SiO 2 and used as the SiO 2 / MgO weight ratio.

以上の試験結果は第1表に示す通りである。The above test results are shown in Table 1.

第1表から明らかなように、SiO2/MgO重量比が0.8,1.0
のサンプルはSiO2量が少ないため、MgO−SiO2系の結晶
相が発生し、重量比が1.1〜2.2までの範囲では、結晶相
はみられなかった。これは、SiO2分が増えたことで、ガ
ラス相の成分が増加し、均一になりやすくなり、結晶相
が析出しなかったと考えられる。強度について、結晶相
のあるサンプルは、高温強度については、大きなちがい
はみられなかったが、室温強度についてはばらつきがみ
られ、約50kg/mm2のやや低い値を示した。高温強度で
は、SiO2/MgO比が最も高い2.2の場合に、29kg/mm2とな
り、ガラス相の量が増加したことにより、粒界相が軟化
しやすくなり、低い値を示したと考えられる。
As is clear from Table 1, the SiO 2 / MgO weight ratio is 0.8,1.0.
Since the sample had a small amount of SiO 2 , a MgO—SiO 2 system crystal phase was generated, and no crystal phase was observed in the weight ratio range of 1.1 to 2.2. This is considered to be because the glass phase component increased due to an increase in the SiO 2 content, and the glass phase was likely to become uniform, and the crystal phase did not precipitate. Regarding the strength, the samples with a crystalline phase did not show a large difference in the high temperature strength, but there was a variation in the room temperature strength, showing a slightly low value of about 50 kg / mm 2 . At high temperature strength, when the SiO 2 / MgO ratio was 2.2, which was the highest, the value was 29 kg / mm 2 , and it was considered that the grain boundary phase tended to soften due to the increase in the amount of the glass phase, indicating a low value.

以上のことから、結晶相が発生せず、高温強度の低下が
ないSiO2/MgO重量比として、1.1〜2.1の範囲が最適であ
ることがわかった。
From the above, it was found that the optimal SiO 2 / MgO weight ratio in the range of 1.1 to 2.1 is that the crystal phase does not occur and the high temperature strength does not decrease.

また、結晶相の有無のサンプルについて、耐摩耗性、耐
酸化性を調べた。その結果、摩耗試験において結晶相の
ないサンプルは、チッピングをおこさず、良好な表面状
態にあったが、不均一相のあるサンプルについては、チ
ッピングが発生したサンプルもあり、表面状態は、結晶
相のないサンプルと比べて、粗な表面になっていた。ま
た、耐酸化性については、1100℃において1000時間保持
をおこなった。その結果を第1図に示す。第1図におい
て、縦軸はSiO2/MgOの重量比変化に対する重量増加と酸
化処理後の室温強度との関係を示す。SiO2/MgO比が本請
求範囲内である1.1〜2.1においては重量増加(●印)が
ほとんどなく良好であるが、1.1付近以下になると、窒
化珪素の表面層が酸化され急に増加している。このこと
は酸化処理後の室温強度(〇印)においてもはっきり表
われており、酸化増量の多い焼結体の表面層は、酸化さ
れて白っぽくなっておりSiO2/MgO重量比が0.8において
は、約36kg/mm2とかなり低下していることがわかる。
In addition, the samples with and without the crystalline phase were examined for wear resistance and oxidation resistance. As a result, in the abrasion test, the sample without the crystal phase did not cause chipping and had a good surface state, but as for the sample with the non-uniform phase, there was also a sample in which chipping occurred, and the surface state was the crystalline phase. The surface was rough compared to the sample without. Regarding the oxidation resistance, it was held at 1100 ° C for 1000 hours. The results are shown in FIG. In FIG. 1, the vertical axis shows the relationship between the weight increase and the room temperature strength after the oxidation treatment with respect to the change in the weight ratio of SiO 2 / MgO. When the SiO 2 / MgO ratio is within the range of this claim, 1.1 to 2.1, there is almost no weight increase (marked by ●), which is good, but when it is around 1.1 or less, the surface layer of silicon nitride is oxidized and suddenly increases. There is. This is also clearly shown in the room temperature strength (marked with ◯) after the oxidation treatment, and the surface layer of the sintered body with a large amount of increased oxidation is oxidized and becomes whitish, and when the SiO 2 / MgO weight ratio is 0.8. , About 36 kg / mm 2, which is a considerable decrease.

以上の特性の理由によって、本発明の窒化珪素焼結体
は、結晶相の生成防止と高温強度の低下を防ぎ、耐摩耗
性、耐酸化性の特性を確保することが重要である。本請
求の範囲であるSiO2/MgO重量比が1.1〜2.1の窒化珪素焼
結体は、いずれの特性においても十分満たしており、安
定な領域であることを特徴としている。
Due to the above-mentioned characteristics, it is important for the silicon nitride sintered body of the present invention to prevent the formation of a crystal phase, prevent the deterioration of high temperature strength, and secure the characteristics of wear resistance and oxidation resistance. The silicon nitride sintered body having a SiO 2 / MgO weight ratio of 1.1 to 2.1, which is the scope of the present invention, is sufficiently characterized in all of the characteristics and is characterized by being a stable region.

(発明の効果) 以上説明した本発明の窒化珪素焼結体によれば、焼結体
中に結晶相が発生しないとともに高強度で耐摩耗性、耐
酸化性に優れた良好な窒化珪素焼結体を提供できる工業
上大なる効果がある。
(Effects of the Invention) According to the silicon nitride sintered body of the present invention described above, a good silicon nitride sintered body in which a crystal phase is not generated in the sintered body and which has high strength and is excellent in wear resistance and oxidation resistance It has a great industrial effect to provide the body.

このように、本発明の窒化珪素焼結体は、機械的強度、
耐熱性、耐摩耗性、耐酸化性などの諸特性に優れている
ために、例えば、ベアリングやバルブなどの機械部品、
ターボチャジャー等の自動車部材や製鋼用の高温ロール
材等のような高温構造材料としての多くの用途があり、
工業上極めて有用である。
Thus, the silicon nitride sintered body of the present invention has a mechanical strength,
Because of its excellent properties such as heat resistance, wear resistance, and oxidation resistance, for example, mechanical parts such as bearings and valves,
There are many uses as high-temperature structural materials such as automobile parts such as turbochargers and high-temperature roll materials for steelmaking.
It is extremely useful industrially.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の窒化珪素焼結体の1100℃、1000時間保
持における耐酸化性試験において、SiO2/MgO重量比の変
化に対し重量増加と、酸化処理後の室温強度とに及ぼす
影響を示す特性曲線図である。
FIG. 1 shows the influence of the change in the SiO 2 / MgO weight ratio on the weight increase and the room temperature strength after the oxidation treatment in the oxidation resistance test of the silicon nitride sintered body of the present invention held at 1100 ° C. for 1000 hours. It is a characteristic curve figure which shows.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】窒化珪素80〜97重量%と、CeO21〜10重量
%と、MgO,SrOの各々0.5〜5重量%と、SiO20.55〜10.5
重量%とを含有する組成よりなり、かつSiO2/MgOの重量
比が1.1〜2.1の範囲にあることを特徴とする窒化珪素焼
結体。
1. Silicon nitride 80 to 97% by weight, CeO 2 1 to 10% by weight, MgO and SrO 0.5 to 5% by weight, and SiO 2 0.55 to 10.5% by weight.
And a SiO 2 / MgO weight ratio in the range of 1.1 to 2.1.
JP62150311A 1987-06-18 1987-06-18 Silicon nitride sintered body Expired - Fee Related JPH075389B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62150311A JPH075389B2 (en) 1987-06-18 1987-06-18 Silicon nitride sintered body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62150311A JPH075389B2 (en) 1987-06-18 1987-06-18 Silicon nitride sintered body

Publications (2)

Publication Number Publication Date
JPS63315569A JPS63315569A (en) 1988-12-23
JPH075389B2 true JPH075389B2 (en) 1995-01-25

Family

ID=15494241

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62150311A Expired - Fee Related JPH075389B2 (en) 1987-06-18 1987-06-18 Silicon nitride sintered body

Country Status (1)

Country Link
JP (1) JPH075389B2 (en)

Also Published As

Publication number Publication date
JPS63315569A (en) 1988-12-23

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