JPH0760819B2 - Cleaning method for plasma CVD apparatus - Google Patents
Cleaning method for plasma CVD apparatusInfo
- Publication number
- JPH0760819B2 JPH0760819B2 JP62271782A JP27178287A JPH0760819B2 JP H0760819 B2 JPH0760819 B2 JP H0760819B2 JP 62271782 A JP62271782 A JP 62271782A JP 27178287 A JP27178287 A JP 27178287A JP H0760819 B2 JPH0760819 B2 JP H0760819B2
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- Prior art keywords
- vacuum reaction
- cleaning
- wall
- reaction container
- plasma
- Prior art date
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Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明はプラズマCVD（Chemical Vapour Deposition）
法により基板上に薄膜を形成するプラズマCVD装置にお
ける構成部品をクリーニングするプラズマCVD装置のク
リーニング方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention is plasma CVD (Chemical Vapor Deposition).
The present invention relates to a cleaning method for a plasma CVD apparatus for cleaning components in a plasma CVD apparatus for forming a thin film on a substrate by a method.
［従来技術］ 近年、半導体や磁気ディスク等において、プラズマCVD
による薄膜の製造技術が普及しつつある。プラズマCVD
法とは、原料ガス（有機モノマーやSiH4，CH4等）を一
定圧力の真空反応容器内に導入し、且つ真空反応容器内
に設けた電極に高周波電力或いは直流電力をかけてプラ
ズマを発生させ、プラズマのエネルギーで化学反応をさ
せて真空反応容器内の基板上に膜を成長させる方法であ
る。[Prior Art] In recent years, plasma CVD for semiconductors, magnetic disks, etc.
The thin film manufacturing technology is becoming popular. Plasma CVD
The method is to introduce a raw material gas (organic monomer, SiH 4 , CH 4, etc.) into a vacuum reaction vessel at a constant pressure, and apply high frequency power or DC power to the electrodes provided in the vacuum reaction vessel to generate plasma. Then, a chemical reaction is caused by the energy of plasma to grow a film on the substrate in the vacuum reaction container.
この技術では、基板のみに膜を付けることはできず、真
空反応容器や電極等の構成部品にも膜や粉末が付着する
ことが避けられない。特に、有機物を原料とする場合は
付着物が多い。これらの付着物が電極に付着した場合に
は、電界の分布に影響を与え、プラズマの状態、更には
膜質に変化をもたらす。また、真空反応容器の壁面等に
付着物が付いた場合には、ダストとして製品の品質に多
大の悪影響を及ぼす。With this technique, it is not possible to attach a film only to the substrate, and it is unavoidable that the film and powder adhere to the components such as the vacuum reaction container and the electrodes. In particular, when organic materials are used as raw materials, there are many deposits. When these deposits adhere to the electrodes, they affect the distribution of the electric field and change the state of plasma and further the film quality. In addition, if adhered substances are attached to the wall surface of the vacuum reaction container, the quality of the product is adversely affected as dust.
そこで最近、第２図に示すようなプラズマCVD装置を用
いて電極をクリーニングことが提案されている。Therefore, recently, it has been proposed to clean the electrodes by using a plasma CVD apparatus as shown in FIG.
このプラズマCVD装置１は、真空反応容器２内に原料ガ
スを流出させる原料ガス流出電極３と、基板４を支持す
る基板支持電極５とが相対向して配設され、原料ガス流
出電極３には高周波電源６がマッチングボックス7,給電
線路８を介して接続され、真空反応容器２にはその内部
を真空引きする真空ポンプの如き真空引き装置10が接続
された構造になっている。真空反応容器2,原料ガス流出
電極3,基板支持電極5,原料ガス供給配管９等は、例えば
ステンレススチール等で形成されている。In this plasma CVD apparatus 1, a source gas outflow electrode 3 for outflowing a source gas into a vacuum reaction vessel 2 and a substrate support electrode 5 supporting a substrate 4 are arranged to face each other. The high frequency power source 6 is connected via a matching box 7 and a power feeding line 8, and the vacuum reaction vessel 2 is connected to a vacuuming device 10 such as a vacuum pump for vacuuming the inside. The vacuum reaction container 2, the raw material gas outflow electrode 3, the substrate supporting electrode 5, the raw material gas supply pipe 9 and the like are made of, for example, stainless steel.
このようにプラズマCVD装置１において、クリーニング
を容易にするため、基板支持電極５にはリード線11が接
続され、該リード線11は真空反応容器２を気密に且つ電
気的に絶縁して貫通して外部に導出されている。また、
給電線路８とリード線11とには、高周波電源６を原料ガ
ス流出電極３に接続するか又は基板支持電極５に接続す
るかの切替えを行う切替スイッチ12が接続されている。
切替スイッチ12には、高周波電源６を原料ガス流出電極
３にリード線８を介して接続するための固定接点12A
と、高周波電源６を基板支持電極５にリード線11を介し
て接続するための固定接点12Bとが設けられている。真
空反応容器２と給電線路８との間にはスイッチ13が接続
され、給電線路８とリード線11との間にはスイッチ14が
接続され、リード線11と真空反応容器２との間にはスイ
ッチ15が接続されている。原料ガス流出電極３と原料ガ
ス供給配管９とは絶縁物16で絶縁されている。As described above, in the plasma CVD apparatus 1, a lead wire 11 is connected to the substrate supporting electrode 5 to facilitate cleaning, and the lead wire 11 penetrates the vacuum reaction container 2 in an airtight and electrically insulated manner. Have been outsourced. Also,
A changeover switch 12 is connected to the power supply line 8 and the lead wire 11 to switch between connecting the high frequency power source 6 to the source gas outflow electrode 3 or the substrate supporting electrode 5.
The changeover switch 12 has a fixed contact 12A for connecting the high frequency power source 6 to the raw material gas outflow electrode 3 via a lead wire 8.
And a fixed contact 12B for connecting the high frequency power source 6 to the substrate supporting electrode 5 via a lead wire 11. A switch 13 is connected between the vacuum reaction vessel 2 and the power feeding line 8, a switch 14 is connected between the power feeding line 8 and the lead wire 11, and a switch 13 is connected between the lead wire 11 and the vacuum reaction vessel 2. The switch 15 is connected. The raw material gas outflow electrode 3 and the raw material gas supply pipe 9 are insulated by an insulator 16.
このようなプラズマCVD装置１で、基板４上に膜を形成
するには、切替スイッチ12の固定接点12Aをオンとし、
スイッチ13をオフとし、スイッチ14をオフとし、スイッ
チ15をオンとする。真空反応容器２内を真空にし、原料
ガスを原料ガス流出電極３に供給して、基板４にシャワ
ー状に供給する。このとき、原料ガス流出電極３に高周
波電力を印加し、該原料ガス流出電極３と基板支持電極
５との間にプラズマを発生させる。これにより、該プラ
ズマで原料ガスを活性化し、反応させて基板４上に膜を
形成させる。In such a plasma CVD apparatus 1, in order to form a film on the substrate 4, the fixed contact 12A of the changeover switch 12 is turned on,
The switch 13 is turned off, the switch 14 is turned off, and the switch 15 is turned on. The inside of the vacuum reaction vessel 2 is evacuated, the source gas is supplied to the source gas outflow electrode 3, and is supplied to the substrate 4 in a shower shape. At this time, high-frequency power is applied to the source gas outflow electrode 3 to generate plasma between the source gas outflow electrode 3 and the substrate support electrode 5. As a result, the raw material gas is activated by the plasma and reacted to form a film on the substrate 4.
このとき、原料ガス流出電極３や基板支持電極５等側に
もハイドロカーボン系の膜が形成される。この膜は、異
状放電の原因となるため、基板４を除去した状態で不活
性ガス例えばAr及びO2雰囲気中で原料ガス流出電極３と
基板支持電極５とのクリーニングをプラズマエッチング
により行う。酸素雰囲気中でプラズマエッチングする
と、ハイドロカーボン系の付着物がCO2はH2Oなどに酸化
され且つエッチング効果により除去される。At this time, a hydrocarbon-based film is also formed on the source gas outflow electrode 3, the substrate support electrode 5, etc. Since this film causes abnormal discharge, the source gas outflow electrode 3 and the substrate supporting electrode 5 are cleaned by plasma etching in an atmosphere of an inert gas such as Ar and O 2 with the substrate 4 removed. When plasma etching is performed in an oxygen atmosphere, hydrocarbon-based deposits oxidize CO 2 into H 2 O and the like, and are removed by an etching effect.
原料ガス流出電極３のクリーニングは、切替スイッチ12
の固定接点12Aをオンとして原料ガス流出電極３をマッ
チングボックス７を介して高周波電源６に接続し、且つ
スイッチ13,14をオフとし、スイッチ15をオンとして基
板支持電極５及び真空反応容器２を接地し、原料ガスの
供給を停止した状態で原料ガス流出電極３に高周波電力
を印加し、該原料ガス流出電極３と接地状態にある基板
支持電極５及び真空反応容器２との間にプラズマを発生
させ、プラズマエッチングにより原料ガス流出電極３の
膜を除去することにより行う。The source gas outflow electrode 3 is cleaned by the changeover switch 12
The fixed contact 12A is turned on to connect the source gas outflow electrode 3 to the high frequency power source 6 through the matching box 7, the switches 13 and 14 are turned off, and the switch 15 is turned on to turn on the substrate supporting electrode 5 and the vacuum reaction container 2. High frequency power is applied to the source gas outflow electrode 3 in a state of being grounded and the supply of the source gas stopped, and plasma is generated between the source gas outflow electrode 3 and the substrate support electrode 5 and the vacuum reaction container 2 which are in the grounded state. It is generated by removing the film of the source gas outflow electrode 3 by plasma etching.
基板支持電極５のクリーニングは、切替スイッチ12の固
定接点12Bをオンとして基板支持電極５をマッチングボ
ックス７を介して高周波電源６に接続し、且つスイッチ
13をオン，スイッチ14,15をオフとして原料ガス流出電
極３及び真空反応容器２を接地し、原料ガスの供給を停
止した状態で基板支持電極５に高周波電力を印加し、該
基板支持電極５と接地状態にある原料ガス流出電極３及
び真空反応容器２との間にプラズマを発生させ、プラズ
マエッチングにより基板支持電極５の膜を除去すること
により行う。To clean the substrate supporting electrode 5, the fixed contact 12B of the changeover switch 12 is turned on to connect the substrate supporting electrode 5 to the high frequency power source 6 via the matching box 7, and the switch
13 is turned on, switches 14 and 15 are turned off, the source gas outflow electrode 3 and the vacuum reaction container 2 are grounded, and high frequency power is applied to the substrate support electrode 5 with the supply of the source gas stopped. Plasma is generated between the source gas outflow electrode 3 and the vacuum reaction container 2 which are in the grounded state, and the film of the substrate supporting electrode 5 is removed by plasma etching.
ところで、プラズマCVD装置の場合、高周波電源６に接
続されている側の構成部品は、接地されている側の構成
部品に対して負の電位にバイアスされるようになってい
る。このような高周波電源６を用いてプラズマエッチン
グを行う場合には、高周波電源６に接続されている構成
部品の近傍の電位変化が、接地される側の構成部品に比
べて大きく、質量の大きな正イオンが高周波電源６に接
続されている構成部品に向かって加速されて該構成部品
に衝突し、効率の良いプラズマエッチングが行われる。By the way, in the case of the plasma CVD apparatus, the component connected to the high frequency power source 6 is biased to a negative potential with respect to the component grounded. When plasma etching is performed using such a high-frequency power source 6, the potential change in the vicinity of the component connected to the high-frequency power source 6 is larger than that of the component on the grounded side, and the mass is large. Ions are accelerated toward a component connected to the high-frequency power source 6 and collide with the component, so that efficient plasma etching is performed.
［発明が解決しようとする問題点］ しかしながら、このような従来の構造のプラズマCVD装
置では、作業時の安全性のため真空反応容器２は接地さ
れている関係で、その内壁に対する付着物のクリーニン
グを行うことができず、この付着物が製品に付いた場合
には、ダストとして該製品の品質に多大な悪影響を及ぼ
す問題点がある。[Problems to be Solved by the Invention] However, in the plasma CVD apparatus having such a conventional structure, the vacuum reaction container 2 is grounded for the sake of safety during work, and therefore, cleaning of deposits on its inner wall is performed. However, if the deposit adheres to the product, there is a problem that the quality of the product is adversely affected as dust.
本発明の目的は、真空反応容器の内壁のクリーニングが
行えるプラズマCVD装置のクリーニング方法を提供する
ことにある。An object of the present invention is to provide a cleaning method for a plasma CVD apparatus capable of cleaning the inner wall of a vacuum reaction vessel.
［問題点を解決するための手段］ 上記の目的を達成するための本発明の手段を説明する。[Means for Solving Problems] Means of the present invention for achieving the above object will be described.
本願の第１の発明に係るプラズマCVD装置のクリーニン
グ方法は、プラズマCVD装置の真空反応容器内に該真空
反応容器から電気的に絶縁してクリーニング用内壁を設
け、該クリーニング用内壁を高周波電源或いは直流電源
に接続し、該クリーニング用内壁を除いた前記真空反応
容器と該真空反応容器内の他の構成部品とを接地し、前
記真空反応容器内を不活性ガス及び酸素雰囲気にした状
態で前記クリーニング用内壁と接地状態にある前記各構
成部品との間に課電をしてプラズマを発生させ、前記ク
リーニング用内壁をプラズマエッチングによりクリーニ
ングすることを特徴とする。A plasma CVD apparatus cleaning method according to a first invention of the present application provides a cleaning inner wall electrically insulated from the vacuum reaction vessel of the plasma CVD apparatus, and the cleaning inner wall is provided with a high frequency power source or Connected to a direct current power source, grounding the vacuum reaction container excluding the cleaning inner wall and other components in the vacuum reaction container, and the vacuum reaction container in an inert gas and oxygen atmosphere It is characterized in that an electric power is applied between the cleaning inner wall and each of the components in the grounded state to generate plasma, and the cleaning inner wall is cleaned by plasma etching.
本願の第２の発明に係るプラズマCVD装置のクリーニン
グ方法は、プラズマCVD装置の真空反応容器内に該真空
反応容器から電気的に絶縁して複数分割型のクリーニン
グ用内壁を設け、該クリーニング用内壁の所望の分割内
壁部を高周波電源或いは直流電源に接続し、該所望の分
割内壁部を除いた残りの分割内壁部と前記真空反応容器
と該真空反応容器内の他の構成部品とを接地し、前記真
空反応容器内を不活性ガス及び酸素雰囲気にした状態で
前記所望の分割内壁部と接地状態にある前記各構成部品
との間に課電をしてプラズマを発生させ、前記所望の分
割内壁部をプラズマエッチングによりクリーニングする
ことを特徴とする。According to a second aspect of the present invention, there is provided a plasma CVD apparatus cleaning method, wherein a plurality of split-type cleaning inner walls electrically insulated from the vacuum reaction vessel of the plasma CVD apparatus are provided. Of the desired divided inner wall portion is connected to a high frequency power source or a direct current power source, and the remaining divided inner wall portion excluding the desired divided inner wall portion, the vacuum reaction vessel, and other components in the vacuum reaction vessel are grounded. In the state where the inside of the vacuum reaction container is in an atmosphere of inert gas and oxygen, a plasma is generated by applying a voltage between the desired dividing inner wall portion and each of the components in the grounded state to generate the desired dividing. It is characterized in that the inner wall portion is cleaned by plasma etching.
［作用］ 第１の発明のように、真空反応容器内に該真空反応容器
か電気的に絶縁してクリーニング用内壁を設けて、該ク
リーニング用内壁を高周波電源或いは直流電源に接続
し、該クリーニング用内壁を除いた該真空反応容器と該
真空反応容器内の他の構成部品とを接地し、該真空反応
容器内を不活性ガス及び酸素雰囲気にした状態で該クリ
ーニング用内壁と接地状態にある各構成部品との間に課
電をしてプラズマを発生させると、該クリーニング用内
壁をプラズマエッチングによりクリーニングすることが
できる。この場合、真空反応容器は接地しているので、
クリーニング時の安全を確保することができる。[Operation] As in the first aspect of the invention, the vacuum reaction container is provided with a cleaning inner wall that is electrically insulated from the vacuum reaction container, and the cleaning inner wall is connected to a high frequency power source or a DC power source, and the cleaning is performed. The vacuum reaction container excluding the cleaning inner wall and other components inside the vacuum reaction container are grounded, and the interior of the vacuum reaction container is grounded with an inert gas and oxygen atmosphere. When a voltage is applied between each component and plasma is generated, the inner wall for cleaning can be cleaned by plasma etching. In this case, since the vacuum reaction vessel is grounded,
It is possible to ensure safety during cleaning.
第２の発明のように、真空反応容器内に該真空反応容器
から電気的に絶縁して複数分割型のクリーニング用内壁
を設けて、該クリーニング用内壁の所望の分割内壁部を
高周波電源或いは直流電源に接続し、該所望の分割内壁
部を除いた残りの分割内壁部と該真空反応容器と該真空
反応容器内の他の構成部品とを接地し、該真空反応容器
内を不活性ガス及び酸素雰囲気にした状態で該所望の分
割内壁部と接地状態にある各構成部品との間に課電をし
てプラズマを発生させると、該所望の分割内壁部をプラ
ズマエッチングによりクリーニングすることができる。
他の分割内壁部も同様にしてプラズマエッチングにより
クリーニングすることができる。As in the second aspect of the present invention, a plurality of divided inner walls for cleaning are provided in the vacuum reaction container so as to be electrically insulated from the vacuum reaction container, and the desired divided inner wall portion of the inner wall for cleaning is supplied with a high frequency power source or a direct current. The interior of the vacuum reaction vessel is connected to a power source, the remaining divisional inner wall portion excluding the desired divisional inner wall portion, the vacuum reaction vessel, and other components inside the vacuum reaction vessel are grounded, and an inert gas and When a plasma is generated by applying a voltage between the desired divided inner wall portion and each component in the grounded state in an oxygen atmosphere, the desired divided inner wall portion can be cleaned by plasma etching. .
Similarly, the other divided inner wall portions can be cleaned by plasma etching.
このようにクリーニング用内壁を複数の分割内壁部に分
割して、個々にクリーニングできるいようにすると、ク
リーニング用内壁の全体を一括してクリーニングする場
合よりも、容量の小さい電源を用いてクリーニングする
ことができる。また、汚れ易い分割内壁部だけ他の分割
内壁部より頻繁にクリーニングすることもできる。In this way, if the cleaning inner wall is divided into a plurality of divided inner wall portions so that cleaning can be performed individually, cleaning is performed using a power source having a smaller capacity than in the case where the entire cleaning inner wall is collectively cleaned. be able to. Further, it is possible to clean only the divided inner wall portion that is easily soiled more frequently than the other divided inner wall portions.
［実施例］ 以下、本発明の実施例を第１図を参照して詳細に説明す
る。なお、前述した第２図と対応する部分には、同一符
号を付けて示している。[Embodiment] An embodiment of the present invention will be described in detail below with reference to FIG. The parts corresponding to those in FIG. 2 described above are designated by the same reference numerals.
本実施例では、真空反応容器２内に数mmの隙間（電子の
平均自由行程以下）を明けて電気的に絶縁してクリーニ
ング用内壁21が設けられている。該クリーニング用内壁
21は、分割内壁部21a,21bに２分割されている。各分割
内壁部21a,21bにはリード線17,18がそれぞれ接続され、
これらリード線17,18は真空反応容器２を気密且つ電気
的に絶縁して貫通して外部に導出されている。切替スイ
ッチ12には、固定接点12A,12Bのほかに、高周波電源６
を分割内壁部21a,21bにリード線17,18を介して接続する
ための固定接点12C,12Dが設けられている。真空反応容
器２とリード線17との間にはスイッチ19が設けられ、真
空反応容器２とリード線18との間にはスイッチ20が設け
られている。その他の構成は第２図と同様になってい
る。In this embodiment, an inner wall 21 for cleaning is provided in the vacuum reaction container 2 with a gap of several mm (below the mean free path of electrons) opened and electrically insulated. Inner wall for cleaning
21 is divided into two inner wall portions 21a and 21b. Lead wires 17, 18 are connected to the respective inner wall portions 21a, 21b,
These lead wires 17 and 18 extend through the vacuum reaction container 2 in an airtight and electrically insulated manner and lead to the outside. In addition to the fixed contacts 12A and 12B, the changeover switch 12 has a high-frequency power source 6
Fixed contact points 12C and 12D for connecting the inner wall portions 21a and 21b to the divided inner wall portions 21a and 21b through the lead wires 17 and 18, respectively. A switch 19 is provided between the vacuum reaction container 2 and the lead wire 17, and a switch 20 is provided between the vacuum reaction container 2 and the lead wire 18. Other configurations are the same as those in FIG.
このようなプラズマCVD装置で、成膜速度を５オングス
トローム/Sを50〜500オングストローム/Sとするため、
原料ガス量を100ccmにしたところ、真空反応容器２の分
割内壁部21a,21bにも成膜が生じ、成膜の安定性が非常
に悪くなった。In such a plasma CVD apparatus, in order to set the film forming rate to 5 Å / S to 50 to 500 Å / S,
When the amount of raw material gas was set to 100 ccm, film formation occurred on the divided inner wall portions 21a and 21b of the vacuum reaction container 2, and the stability of film formation became extremely poor.
そこで、これら分割内壁部21a,21bのクリーニングを、
次のようにして行った。Therefore, clean these divided inner wall portions 21a, 21b,
It went as follows.
まず、分割内壁部21aのクリーニングについて説明す
る。この場合には、切替スイッチ12の固定接点12Cをオ
ンにして分割内壁部21aをマッチングボックス７を介し
て高周波電源６に接続し、且つそれ以外の分割内壁部21
b,電極3,5及び真空反応容器２の接地（スイッチ13,15,2
0をオン、スイッチ19をオフ）し、原料ガスの供給を停
止した状態で分割内壁部21aに高周波電源６から高周波
電力を印加し、該分割内壁部21aと接地状態にある分割
内壁部21b,電極3,5及び真空反応容器２との間にプラズ
マを発生させ、プラズマエッチングにより該分割内壁部
21aの膜を除去する。First, the cleaning of the divided inner wall portion 21a will be described. In this case, the fixed contact 12C of the changeover switch 12 is turned on to connect the divided inner wall portion 21a to the high frequency power source 6 via the matching box 7, and the other divided inner wall portions 21a.
b, grounding of electrodes 3, 5 and vacuum reaction vessel 2 (switches 13, 15, 2
0 is turned on, the switch 19 is turned off), high frequency power is applied from the high frequency power source 6 to the divided inner wall portion 21a in a state where the supply of the raw material gas is stopped, and the divided inner wall portion 21a and the divided inner wall portion 21b which are in a grounded state, Plasma is generated between the electrodes 3 and 5 and the vacuum reaction container 2, and the divided inner wall portion is formed by plasma etching.
The film of 21a is removed.
次に、分割内壁部21bのクリーニングについて説明す
る。この場合には、切替スイッチ12の固定接点12Dをオ
ンにして分割内壁部21bをマッチングボックス７を介し
て高周波電源６に接続し、且つそれ以外の分割内壁部21
a,電極3,5及び真空反応容器２を接地（スイッチ13,15,1
9をオン、スイッチ20をオフ）し、原料ガスの供給を停
止した状態で分割内壁部21bに高周波電源６から高周波
電力を印加し、該分割内壁部21bと接地状態にある分割
内壁部21a,電極3,5及び真空反応容器２との間にプラズ
マを発生させ、プラズマエッチングにより該分割内壁部
21bの膜を除去する。Next, cleaning of the divided inner wall portion 21b will be described. In this case, the fixed contact 12D of the changeover switch 12 is turned on to connect the divided inner wall portion 21b to the high frequency power source 6 via the matching box 7, and the other divided inner wall portions 21b.
a, electrodes 3, 5 and vacuum reaction vessel 2 are grounded (switches 13, 15, 1
9 is turned on and the switch 20 is turned off), high-frequency power is applied from the high-frequency power source 6 to the divided inner wall portion 21b in a state where the supply of the raw material gas is stopped, and the divided inner wall portion 21b and the divided inner wall portion 21a in a grounded state, Plasma is generated between the electrodes 3 and 5 and the vacuum reaction container 2, and the divided inner wall portion is formed by plasma etching.
The film of 21b is removed.
このようにクリーニング用内壁21を複数の分割内壁部21
a,21bに分割して、個々にクリーニングできるようにす
ると、クリーニング用内壁21の全体を一括してクリーニ
ングする場合よりも、容量の小さい電源６を用いてクリ
ーニングすることができる。また、汚れ易い分割内壁部
だけ他の分割内壁部より頻繁にクリーニングすることも
できる。In this way, the cleaning inner wall 21 is divided into a plurality of divided inner wall portions 21.
When divided into a and 21b so that they can be individually cleaned, cleaning can be performed using the power supply 6 having a smaller capacity than in the case where the entire cleaning inner wall 21 is collectively cleaned. Further, it is possible to clean only the divided inner wall portion that is easily soiled more frequently than the other divided inner wall portions.
両電極3,5を高周波電源６に接続してクリーニングする
場合には、切替スイッチ12の固定接点12A及びスイッチ1
4をオン、スイッチ19,20をオン、それ以外のスイッチを
オフとする。When both electrodes 3, 5 are connected to the high frequency power source 6 for cleaning, the fixed contact 12A of the changeover switch 12 and the switch 1
4 is turned on, switches 19 and 20 are turned on, and other switches are turned off.
これにより主なクリーニング用内壁及び電極上にプラズ
マを発生させることができ、それぞれ２分の計６分で真
空反応容器２内の構成部品をクリーニングすることが可
能になった。更に、今までは成膜処理の５回毎に３〜４
時間かけて分解クリーニングしていたものを、５回毎に
６分間のプラズマエッチング・クリーニングを入れるこ
とにより、少なくとも100回は分解クリーニングせずに
成膜できるようになった。As a result, plasma can be generated on the main inner wall for cleaning and the electrode, and it becomes possible to clean the components inside the vacuum reaction container 2 in a total of 6 minutes for 2 minutes. Furthermore, up to now, every 5 to 5 times of film formation processing, 3 to 4
By performing plasma etching cleaning for 6 minutes every 5 times, which had been decomposed and cleaned over time, it became possible to form a film at least 100 times without decomposition and cleaning.
なお、プラズマエッチングは、直流電源からの給電によ
り行ってもよいことは勿論である。Incidentally, it goes without saying that the plasma etching may be performed by supplying power from a DC power supply.
［発明の効果］ 以上説明したように本願の第１の発明では、真空反応容
器内に該真空反応容器から電気的に絶縁してクリーニン
グ用内壁を設けて、該クリーニング用内壁を高周波電源
或いは直流電源に接続し、該クリーニング用内壁を除い
た該真空反応容器と該真空反応容器内の他の構成部品と
を接地し、該真空反応容器内を不活性ガス及び酸素雰囲
気にした状態で該クリーニング用内壁と接地状態にある
各構成部品との間に課電をしてプラズマを発生させるの
で、該クリーニング用内壁をプラズマエッチングにより
クリーニングすることができる。この場合、真空反応容
器は接地しているので、クリーニング時の安全を確保す
ることができる。[Effects of the Invention] As described above, in the first invention of the present application, a cleaning inner wall is provided inside the vacuum reaction container so as to be electrically insulated from the vacuum reaction container, and the cleaning inner wall is provided with a high frequency power source or a direct current. The cleaning is performed in a state of being connected to a power source, grounding the vacuum reaction container excluding the cleaning inner wall and other components in the vacuum reaction container, and being in an inert gas and oxygen atmosphere in the vacuum reaction container. Since a plasma is generated by applying a voltage between the inner wall for use and each component in the grounded state, the inner wall for cleaning can be cleaned by plasma etching. In this case, since the vacuum reaction container is grounded, safety during cleaning can be ensured.
本願の第２の発明では、真空反応容器内に該真空反応容
器から電気的に絶縁して複数分割型のクリーニング用内
壁を設けて、該クリーニング用内壁の所望の分割内壁部
を高周波電源或いは直流電源に接続し、該所望の分割内
壁部を除いた残りの分割内壁部と該真空反応容器と該真
空反応容器内の他の構成部品とを接地し、該真空反応容
器内を不活性ガス及び酸素雰囲気にした状態で該所望の
分割内壁部と接地状態にある各構成部品との間に課電を
してプラズマを発生させるので、該所望の分割内壁部を
プラズマエッチングによりクリーニングすることができ
る。また、他の分割内壁部も同様にしてプラズマエッチ
ングによりクリーニングすることができる。In the second invention of the present application, a plurality of divided inner walls for cleaning which are electrically insulated from the vacuum reactor are provided in the vacuum reaction container, and a desired divided inner wall portion of the cleaning inner wall is provided with a high frequency power source or a direct current. The interior of the vacuum reaction vessel is connected to a power source, the remaining divisional inner wall portion excluding the desired divisional inner wall portion, the vacuum reaction vessel, and other components inside the vacuum reaction vessel are grounded, and an inert gas and Since a plasma is generated by applying a voltage between the desired divided inner wall portion and each component in the grounded state in an oxygen atmosphere, the desired divided inner wall portion can be cleaned by plasma etching. . Further, the other divided inner wall portions can be similarly cleaned by plasma etching.
このようにクリーニング用内壁を複数の分割内壁部に分
割して、個々にクリーニングできるようにすると、クリ
ーニング用内壁の全体を一括してクリーニングする場合
よりも、容量の小さい電源を用いてクリーニングするこ
とができる。また、汚れ易い分割内壁部だけ他の分割内
壁部より頻繁にクリーニングすることもできる。In this way, when the cleaning inner wall is divided into a plurality of divided inner wall portions so that they can be individually cleaned, it is necessary to use a power source having a smaller capacity than cleaning the entire cleaning inner wall at once. You can Further, it is possible to clean only the divided inner wall portion that is easily soiled more frequently than the other divided inner wall portions.
第１図は本発明の方法を実施するプラズマCVD装置の一
実施例を示す概略縦断面図、第２図は従来のプラズマCV
D装置を示す概略縦断面図である。 １……プラズマCVD装置、２……真空反応容器、３……
原料ガス流出電極、４……基板、基板支持電極、６……
高周波電源、８……給電線路、９……原料ガス供給配
管、11,17,18……リード線、12……切替スイッチ、12A,
12D……固定接点、13〜15,19,20……スイッチ、21……
クリーニング用内壁、21a,21b……分割内壁部。FIG. 1 is a schematic vertical sectional view showing an embodiment of a plasma CVD apparatus for carrying out the method of the present invention, and FIG. 2 is a conventional plasma CV.
It is a schematic longitudinal cross-sectional view showing a D device. 1 ... Plasma CVD apparatus, 2 ... Vacuum reaction vessel, 3 ...
Source gas outflow electrode, 4 ... Substrate, substrate support electrode, 6 ...
High-frequency power source, 8 ... Feed line, 9 ... Raw material gas supply pipe, 11, 17, 18 ... Lead wire, 12 ... Changeover switch, 12A,
12D …… fixed contact, 13 to 15,19,20 …… switch, 21 ……
Inner wall for cleaning, 21a, 21b …… Divided inner wall part.
フロントページの続き (56)参考文献 特開 昭58−171821（ＪＰ，Ａ) 特開 昭56−125840（ＪＰ，Ａ) 特開 昭63−76434（ＪＰ，Ａ)Continuation of front page (56) Reference JP-A-58-171821 (JP, A) JP-A-56-125840 (JP, A) JP-A-63-76434 (JP, A)
Claims (2)
空反応容器から電気的に絶縁してクリーニング用内壁を
設け、該クリーニング用内壁を高周波電源或いは直流電
源に接続し、該クリーニング用内壁を除いた前記真空反
応容器と該真空反応容器内の他の構成部品とを接地し、
前記真空反応容器内を不活性ガス及び酸素雰囲気にした
状態で前記クリーニング用内壁と接地状態の前記各構成
部品との間に課電をしてプラズマを発生させ、前記クリ
ーニング用内壁をプラズマエッチングによりクリーニン
グすることを特徴とするプラズマCVD装置のクリーニン
グ方法。1. A vacuum reaction container of a plasma CVD apparatus is provided with a cleaning inner wall electrically insulated from the vacuum reaction container, the cleaning inner wall is connected to a high frequency power source or a DC power source, and the cleaning inner wall is connected to the cleaning inner wall. The removed vacuum reaction vessel and the other components in the vacuum reaction vessel are grounded,
Electricity is generated between the cleaning inner wall and each component in the grounded state in a state where the inside of the vacuum reaction container is in an inert gas and oxygen atmosphere to generate plasma, and the inner wall for cleaning is plasma-etched. A method for cleaning a plasma CVD apparatus, which comprises cleaning.
空反応容器から電気的に絶縁して複数分割型のクリーニ
ング用内壁を設け、該クリーニング用内壁の所望の分割
内壁部を高周波電源或いは直流電源に接続し、該所望の
分割内壁部を除いた残りの分割内壁部と前記真空反応容
器と該真空反応容器内の他の構成部品とを接地し、前記
真空反応容器内を不活性ガス及び酸素雰囲気にした状態
で前記所望の分割内壁部と接地状態の前記各構成部品と
の間に課電をしてプラズマを発生させ、前記所望の分割
内壁部をプラズマエッチングによりクリーニングするこ
とを特徴とするプラズマCVD装置のクリーニング方法。2. A vacuum reaction vessel of a plasma CVD apparatus is provided with a plurality of divided inner walls for electrical insulation that are electrically insulated from the vacuum reaction vessel, and a desired inner divided wall portion of the cleaning inner wall is a high frequency power source or a direct current. It is connected to a power source, the remaining divided inner wall portion excluding the desired divided inner wall portion is grounded to the vacuum reaction container and other components in the vacuum reaction container, and the inside of the vacuum reaction container is filled with an inert gas and In a state of being in an oxygen atmosphere, a voltage is applied between the desired divided inner wall portion and each component in the grounded state to generate plasma, and the desired divided inner wall portion is cleaned by plasma etching. Method for cleaning plasma CVD device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62271782A JPH0760819B2 (en) | 1987-10-29 | 1987-10-29 | Cleaning method for plasma CVD apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62271782A JPH0760819B2 (en) | 1987-10-29 | 1987-10-29 | Cleaning method for plasma CVD apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01115123A JPH01115123A (en) | 1989-05-08 |
| JPH0760819B2 true JPH0760819B2 (en) | 1995-06-28 |
Family
ID=17504776
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62271782A Expired - Fee Related JPH0760819B2 (en) | 1987-10-29 | 1987-10-29 | Cleaning method for plasma CVD apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0760819B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2745895B2 (en) * | 1991-10-04 | 1998-04-28 | 住友金属工業株式会社 | Plasma equipment |
| TW371776B (en) * | 1995-10-15 | 1999-10-11 | Semiconductor Energy Lab Co Ltd | Laser irradiation apparatus and method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56125840A (en) * | 1980-03-07 | 1981-10-02 | Fujitsu Ltd | Cleaning method of dry etching device |
| JPS58171821A (en) * | 1982-03-31 | 1983-10-08 | Matsushita Electric Ind Co Ltd | Detection of contamination and purification degree in plasma processing and apparatus thereof |
| JPS6376434A (en) * | 1986-09-19 | 1988-04-06 | Hitachi Ltd | Plasma processing equipment and plasma cleaning method |
-
1987
- 1987-10-29 JP JP62271782A patent/JPH0760819B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01115123A (en) | 1989-05-08 |
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