JPH0764630B2 - Dielectric porcelain composition - Google Patents
Dielectric porcelain compositionInfo
- Publication number
- JPH0764630B2 JPH0764630B2 JP63219465A JP21946588A JPH0764630B2 JP H0764630 B2 JPH0764630 B2 JP H0764630B2 JP 63219465 A JP63219465 A JP 63219465A JP 21946588 A JP21946588 A JP 21946588A JP H0764630 B2 JPH0764630 B2 JP H0764630B2
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- tio
- temperature coefficient
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- 239000000203 mixture Substances 0.000 title claims description 39
- 229910052573 porcelain Inorganic materials 0.000 title description 5
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 15
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 11
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims description 11
- 229910052772 Samarium Inorganic materials 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 description 16
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 12
- 230000000694 effects Effects 0.000 description 6
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- -1 S m 2 O 3 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、例えば温度補償用磁器コンデンサやマイクロ
波回路用の誘電体共振器等に使用される誘電体磁器組成
物に関するものである。TECHNICAL FIELD The present invention relates to a dielectric ceramic composition used in, for example, a temperature-compensating ceramic capacitor, a dielectric resonator for a microwave circuit, and the like.
マイクロ波やミリ波（以下、マイクロ波等という）を取
り扱う高周波回路の分野においては，回路の小型化の課
題がある。しかし、上記マイクロ波等はその波長が数mm
から数cmあり、マイクロ波回路用の空洞共振器等の大き
さも波長と同程度の大きさにする必要があるので、回路
の小型化が容易に達成できなかった。そこで、従来よ
り、誘電体磁器組成物を用いて取り扱う高周波の波長そ
のものを小さくし、回路の小型化を達成しようとする提
案がある。In the field of high frequency circuits that handle microwaves and millimeter waves (hereinafter referred to as microwaves), there is a problem of circuit miniaturization. However, the wavelength of the above microwaves is several mm.
Since it is necessary to make the size of the cavity resonator for the microwave circuit and the like to be about the same as the wavelength, it has not been possible to easily miniaturize the circuit. Therefore, conventionally, there has been a proposal to reduce the wavelength itself of a high frequency to be handled by using a dielectric ceramic composition, thereby achieving miniaturization of a circuit.
この誘電体磁器組成物としては、比誘電率（以下、符号
εｒで示す。）が大きいこと、無負荷Ｑ（以下、符号Qu
で示す。また、Qu＝1/tanδである。）が大きく低損失
であること、さらに組成を変えることによって０を中心
にして正又は負の任意の温度係数τｆが得られることが
要求される。This dielectric porcelain composition has a large relative dielectric constant (hereinafter, indicated by reference sign ε r ) and no load Q (hereinafter, reference sign Q u).
Indicate. Also, Q u = 1 / tan δ. ) Is large and low loss, and it is required that an arbitrary positive or negative temperature coefficient τ f centered on 0 can be obtained by changing the composition.
そして、このような要求をできるだけ満足させるため、
従来より、BaTiO2系組成物、MgTiO3・CaO系組成物、ZnO
2・SnO2・TiO2系組成物等の誘電体磁器組成物が使用さ
れており、また特公昭55−10928号公報においては、ZnO
2・SnO2・TiO2系等の誘電体磁器組成物にLa2O3を添加し
たものが提案されている。And to satisfy these demands as much as possible,
Conventionally, BaTiO 2 type composition, MgTiO 3 · CaO type composition, ZnO
The dielectric ceramic composition, such as 2 · SnO 2 · TiO 2 based composition is used, also in Japanese Patent Publication No. Sho 55-10928 is, ZnO
It has been proposed to add La 2 O 3 to a dielectric ceramic composition such as 2 · SnO 2 · TiO 2 system.
しかしながら、上記従来例はいずれも、比誘電率
（εｒ）が大きいこと、無負荷Ｑ（Qu）が大きいこと、
０を中心にして正又は負の温度係数τｆが任意に設定で
きることを全て満足できるものではなく、小型化の要求
は十分に達成できないという問題があった。However, in all of the above-mentioned conventional examples, the relative permittivity (ε r ) is large, the no-load Q (Q u ) is large,
There is a problem in that the positive or negative temperature coefficient τ f can be set arbitrarily around 0, and the demand for downsizing cannot be sufficiently achieved.
例えば、上記公報掲載の組成物は、温度係数τｆが0ppm
/℃において比誘電率εｒが20〜40と小さく、この結果
誘電体共振器等の小型化が不十分であるという問題があ
った。For example, the composition disclosed in the above publication has a temperature coefficient τ f of 0 ppm.
The relative permittivity ε r was as small as 20 to 40 at / ° C., and as a result, there was a problem that the size reduction of the dielectric resonator or the like was insufficient.
また、本出願人は特公昭61−14606号公報に（BaO）・
（TiO2）Ｘ系組成物と、Sm2O3と、La2O3とからなる誘電
体磁器組成物を開示しているが、さらに一層特性の優れ
た、小型化の可能な組成物が望まれている。Further, the present applicant has filed Japanese Patent Publication No. 61-14606 (BaO).
Although a dielectric porcelain composition comprising a (TiO 2 ) X- based composition, Sm 2 O 3 and La 2 O 3 is disclosed, a composition which is further excellent in characteristics and can be miniaturized is disclosed. Is desired.
そこで、本発明は上記したような従来技術の課題を解決
し、比誘電率及び無負荷Ｑをより大きくし、しかも０を
中心にして正又は負の温度係数τｆが任意に得られる誘
電体磁器組成物を提供することを目的としている。Therefore, the present invention solves the problems of the prior art as described above, increases the relative permittivity and the no-load Q, and further obtains a positive or negative temperature coefficient τ f centered around 0 as desired. The purpose is to provide a porcelain composition.
本発明に係る誘電体磁器組成物は、酸化バリウム・二酸
化チタン｛（BaO）・（TiO2）Ｘ｝系組成物と、酸化サ
マリウム｛Sm2O3｝と、酸化ランタン｛La2O3｝とを主成
分とし、酸化物換算による上記主成分の組成を、BaOが1
5〜19モル％、TiO2が62〜74モル％、Sm2O3が８〜18モル
％、La2O3が１〜3.5％モルの範囲内とした誘電体磁器組
成物において、酸化ビスマス｛Bi2O3｝を2.5重量％以下
添加したことを特徴としている。The dielectric ceramic composition according to the present invention comprises a barium oxide / titanium dioxide {(BaO). (TiO 2 ) X } -based composition, samarium oxide {Sm 2 O 3 } and lanthanum oxide {La 2 O 3 }. The main constituents of and are as follows.
In the dielectric ceramic composition, the content of bismuth oxide is 5 to 19 mol%, TiO 2 is 62 to 74 mol%, Sm 2 O 3 is 8 to 18 mol%, and La 2 O 3 is 1 to 3.5% mol. It is characterized by adding less than 2.5 wt% of {Bi 2 O 3 }.
本発明においては、主成分の内、BaOを15〜19モル％、T
iO2を62〜74モル％の範囲に限定した。この範囲に限定
した理由は、この範囲から外れる場合には無負荷Ｑが小
さくなり、温度係数も正または負で大きくなり過ぎるか
らである。In the present invention, among the main components, 15 to 19 mol% of BaO, T
The iO 2 was limited to the range of 62 to 74 mol%. The reason for limiting to this range is that when it deviates from this range, the no-load Q becomes small and the temperature coefficient becomes too large in positive or negative.
また、主成分の内La2O3を１〜3.5モル％の範囲に限定し
た。この範囲に限定した理由は、La2O3を3.5モル％以上
にすると温度係数が正又は負で大きくなり過ぎる、１モ
ル％以下にすると比誘電率が50以下と非常に小さくなる
からである。Further, La 2 O 3 in the main component was limited to the range of 1 to 3.5 mol%. The reason for limiting the content to this range is that when La 2 O 3 is 3.5 mol% or more, the temperature coefficient becomes too positive or negative, and when it is 1 mol% or less, the relative dielectric constant becomes 50 or less, which is extremely small. .
さらに、主成分の内Sm2O3を８〜18モル％の範囲に限定
した。この範囲に限定した理由は、Sm2O3を８モル％未
満または18モル％を越える量にすると無負荷Ｑが小さく
温度係数が正又は負で大きくなり過ぎるからである。Further, Sm 2 O 3 in the main component was limited to the range of 8 to 18 mol%. The reason for limiting this range is that when the amount of Sm 2 O 3 is less than 8 mol% or more than 18 mol%, the unloaded Q is small and the temperature coefficient becomes positive or negative and becomes too large.
Bi2O3を添加する理由は、添加量の増加につれて、誘電
率と無負荷Ｑを増大させることができ、また温度特性を
変化させることができるからである。Bi2O3の添加量を
0.1〜2.5重量％の範囲としたのは、0.1重量％未満で
は、誘電率と無負荷Ｑの添加効果が小さく、温度係数の
変化が小さく添加効果がなく、2.5重量％を越えて添加
すると誘電率と無負荷Ｑが低下し過ぎるからである。The reason for adding Bi 2 O 3 is that the dielectric constant and the unloaded Q can be increased and the temperature characteristics can be changed as the addition amount increases. The amount of Bi 2 O 3 added
The range of 0.1 to 2.5% by weight is that if less than 0.1% by weight, the effect of adding the dielectric constant and unloaded Q is small, the change in the temperature coefficient is small, and there is no effect of addition. This is because the rate and the no-load Q are too low.
以下に、本発明に係る誘電体磁器組成物について説明す
る。Hereinafter, the dielectric ceramic composition according to the present invention will be described.
第１図は本発明に係る誘電体磁器組成物の実施例の組成
及び特性を示す図表である。同図において、No.3,5〜1
0,13〜15,18を付した組成のものは本発明に係る誘電体
磁器組成物を示し、また、No.1,2,4,11,12,16,17,19,20
を付した（＊印を付されたもの）誘電体磁器組成物は本
発明には含まれない比較例である。FIG. 1 is a table showing the composition and characteristics of an example of the dielectric ceramic composition according to the present invention. In the figure, No. 3, 5-1
The composition with 0,13 to 15,18 indicates the dielectric porcelain composition according to the present invention, and also No. 1,2,4,11,12,16,17,19,20.
The dielectric ceramic composition marked (marked with *) is a comparative example not included in the present invention.
図表に示す誘電体磁器組成物は、（BaO）・（TiO2）Ｘ
系組成物と、Sm2O3と、La2O3とを主成分とし、これにBi
2O3を添加したものである。そして、この図表には酸化
物換算による主成分の組成を、 （BaO）・（TiO2）Ｘ系組成物で79〜91モル％の範囲内
で変化させ、Sm2O3を８〜18モル％の範囲内で変化さ
せ、La2O3を１〜3.5モル％の範囲内で変化させ、さらに
Bi2O3を０〜４重量％の範囲内で変化させたNo.1〜20の
各誘電体磁器組成について特性を測定したものである。The dielectric ceramic composition shown in the figure is (BaO). (TiO 2 ) X
System composition, Sm 2 O 3 and La 2 O 3 as main components, and Bi
2 O 3 is added. And, in this chart, the composition of the main component in terms of oxide is changed in the range of 79 to 91 mol% for the (BaO) · (TiO 2 ) X composition, and the Sm 2 O 3 is changed to 8 to 18 mol. % Within the range of 1 to 3.5 mol%, and further La 2 O 3 within the range of 1 to 3.5 mol%.
The characteristics were measured for each of the dielectric ceramic compositions No. 1 to 20 in which Bi 2 O 3 was changed in the range of 0 to 4% by weight.
ここで、上記誘電体磁器組成物は以下のように製造した
ものである。Here, the above-mentioned dielectric ceramic composition is manufactured as follows.
先ず、出発原料として化学的に高純度のBaCO3、TiO2、S
m2O3、La2O3、及びBi2O3を第１図の図表に示す組成比率
にて混合する。First, as a starting material, chemically pure BaCO 3 , TiO 2 , S
m 2 O 3 , La 2 O 3 , and Bi 2 O 3 are mixed in the composition ratio shown in the chart of FIG.
次に、空気中において1060℃で２時間仮焼する。得られ
た仮焼物をポットミルで純水と共に、湿式粉砕し、脱水
乾燥後バインダを添加し造粒し、その後32メッシュのふ
るいを通して整粒する。Then, it is calcined in air at 1060 ° C. for 2 hours. The obtained calcined product is wet-milled with pure water in a pot mill, dehydrated and dried, added with a binder, and then granulated, and then passed through a 32 mesh sieve to be sized.
次に、得られた造粒粉に、金型を用いた油圧プレスで１
〜1.3ton/cm2の成形圧力を加え、直径16mmで厚さ9mmの
円盤状の成形体を得る。Next, the obtained granulated powder was subjected to 1 by a hydraulic press using a mold.
A molding pressure of ~ 1.3 ton / cm 2 is applied to obtain a disk-shaped molded body having a diameter of 16 mm and a thickness of 9 mm.
次に、この成形体を高純度のアルミナ匣に入れ1260〜14
50℃の焼成条件で２時間焼成して、誘電体磁器組成物を
得た。Next, put this molded body in a high-purity alumina box for 1260 to 14
It was fired for 2 hours under the firing condition of 50 ° C. to obtain a dielectric ceramic composition.
尚、第１図に示された比誘電率（εｒ）及び無負荷Ｑ
（Qu）は、ハッキ・コールマン法により測定した。The relative permittivity (ε r ) and unloaded Q shown in FIG.
(Q u ) was measured by the Hacky-Coleman method.
また、温度係数（τｆ）は下記の式１に従って20℃の共
振周波数を基準にして−30℃〜70℃の温度範囲において
求めた。ここで、測定時の共振周波数は３〜5GHzであっ
た。Further, the temperature coefficient (τ f ) was obtained according to the following formula 1 in the temperature range of −30 ° C. to 70 ° C. with reference to the resonance frequency of 20 ° C. Here, the resonance frequency at the time of measurement was 3 to 5 GHz.
τｆ＝［｛ｆ（70）−ｆ（−30）｝/f（20）］ ・（1/ΔＴ）（ppm/℃） …式１ 但し、ｆ（20）は20℃における共振周波数、ｆ（70）は
70℃における共振周波数、ｆ（−30）は−30℃における
共振周波数、測定温度差ΔＴは｛70℃−（−30℃）｝よ
り100℃である。τ f = [{f (70) −f (−30)} / f (20)] · (1 / ΔT) (ppm / ° C) ... Equation 1 where f (20) is the resonance frequency at 20 ° C., f (70) is
The resonance frequency at 70 ° C, f (-30) is the resonance frequency at -30 ° C, and the measured temperature difference ΔT is 100 ° C from {70 ° C-(-30 ° C)}.
上記測定結果を示す第１図の図表より、主成分である
（BaO）・（TiO2）Ｘ（ｘ＝3.7〜4.3）が79モル％〜91
モル％の範囲内で、Sm2O3が８〜18モル％の範囲内で、L
a2O3が１〜3.5モル％の範囲内であると共に、添加物で
あるBi2O3が0.1〜2.5重量％の範囲のときに、比誘電率
（εｒ）と無負荷Ｑ（Qu）が大きく、しかも０を中心に
して正又は負の温度係数（τｆ）が大き過ぎない範囲内
で得られることがわかる。From the chart of FIG. 1 showing the above measurement results, the main component (BaO). (TiO 2 ) X (x = 3.7 to 4.3) is 79 mol% to 91
Within the range of mol%, Sm 2 O 3 within the range of 8-18 mol%, L
with a 2 O 3 is within the range of 1 to 3.5 mole%, when Bi 2O3 is in the range of 0.1 to 2.5 wt% is additive, the relative dielectric constant (epsilon r) and unloaded Q (Q u) Is large, and it can be seen that the positive or negative temperature coefficient (τ f ) around 0 is obtained within a range that is not too large.
ここで、（BaO）・（TiO2）Ｘ（ｘ＝3.7〜4.3）が79モ
ル％〜91モル％の範囲内であることから、ｘ＝3.7とし
た時及びｘ＝4.3とした時の比計算により、BaOとTiO2の
個々の量が、酸化物換算でBaOが15〜19モル％、TiO2が6
2〜74モル％であといえる。Here, since (BaO) · (TiO 2 ) X (x = 3.7 to 4.3) is in the range of 79 mol% to 91 mol%, the ratio when x = 3.7 and when x = 4.3 By calculation, the respective amounts of BaO and TiO 2 are 15 to 19 mol% of BaO and 6 of TiO 2 in terms of oxide.
It can be said to be 2 to 74 mol%.
尚、BaOを15〜19モル％、TiO2を62〜74モル％の範囲に
限定した理由は、この範囲から外れる場合には無負荷Ｑ
（Qu）が小さくなり、温度係数も正または負で大きくな
り過ぎるからである。また、La2O3を１〜3.5モル％の範
囲に限定した理由は、3.5モル％以上にすると温度係数
が正又は負で大きくなり過ぎ、１モル％以下にすると比
誘電率が50以下と非常に小さくなるからである。さら
に、Sm2O3を８〜18モル％の範囲に限定した理由は、Sm2
O3を８モル％未満または18モル％を越える量にすると無
負荷Ｑ（Qu）が小さく温度係数が正又は負で大きくなり
過ぎるからである。The reason why BaO is limited to 15 to 19 mol% and TiO 2 is limited to 62 to 74 mol% is that no load Q
This is because (Q u ) becomes small and the temperature coefficient becomes positive or negative and becomes too large. Further, the reason why La 2 O 3 is limited to the range of 1 to 3.5 mol% is that the temperature coefficient becomes positive or negative too large when it is 3.5 mol% or more, and the relative dielectric constant is 50 or less when it is 1 mol% or less. Because it becomes very small. Furthermore, the reason for limiting the Sm 2 O 3 in the range of 8 to 18 mol%, Sm 2
This is because when the amount of O 3 is less than 8 mol% or more than 18 mol%, the unloaded Q (Q u ) is small and the temperature coefficient becomes positive or negative and becomes too large.
また、Bi2O3を添加する理由は、添加量の増加につれ
て、誘電率と無負荷Ｑ（Qu）を増大させることができ、
また温度特性を変化させることができるからである。Bi
2O3の添加量を0.1〜2.5重量％の範囲としたのは、0.1重
量％未満では、誘電率と無負荷Ｑの添加効果が小さく、
温度係数の変化が小さく添加効果がなく、2.5重量％を
越えて添加すると誘電率と無負荷Ｑが低下し過ぎるから
である。Further, the reason for adding Bi 2 O 3 is that the dielectric constant and the unloaded Q (Q u ) can be increased as the addition amount increases,
Also, the temperature characteristics can be changed. Bi
The reason why the amount of 2 O 3 added is in the range of 0.1 to 2.5% by weight is that when the amount is less than 0.1% by weight, the effect of adding the dielectric constant and unloaded Q is small,
This is because the change in the temperature coefficient is small and there is no effect of addition, and if it is added in excess of 2.5% by weight, the dielectric constant and unloaded Q will drop too much.
以上述べたように、本実施例による誘電体磁器組成物
は、例えば組成No.12とNo.13〜15を比較してわかるよう
に、Bi2O3を添加することにより、Bi2O3を加えない場合
より、比誘電率を大きく、且つ無負荷Ｑを大きくでき
る。また、温度係数については要求される絶対値50以下
を達成できる。As described above, the dielectric ceramic composition according to the present embodiment, for example, as can be seen by comparing the composition No.12 and Nanba13～15, by adding Bi 2 O 3, Bi 2 O 3 It is possible to increase the relative permittivity and increase the no-load Q, as compared with the case where no is added. Moreover, the required absolute value of 50 or less can be achieved for the temperature coefficient.
以上説明したように、本発明による誘電体磁器組成物
は、Bi2O3を添加することにより比誘電率が大きく、無
負荷Ｑが大きく、共振周波数の温度係数を変化させるこ
とができるので、マイクロ波誘電体共振器や温度補償用
コンデンサに広く適用でき、共振器や温度補償用コンデ
ンサの小型化を達成できるという効果が得られる。As described above, the dielectric ceramic composition according to the present invention has a large relative permittivity, a large no-load Q, and can change the temperature coefficient of the resonance frequency by adding Bi 2 O 3 . It can be widely applied to microwave dielectric resonators and temperature compensating capacitors, and it is possible to obtain the effect that miniaturization of the resonator and temperature compensating capacitors can be achieved.
第１図は本発明に係る誘電体磁器組成物の組成及び特性
を示す図表である。FIG. 1 is a table showing the composition and characteristics of the dielectric ceramic composition according to the present invention.
Claims (1)
3と、La2O3とを主成分とし、 酸化物換算による上記主成分の組成を、 BaOが15〜19モル％、 TiO2が62〜74モル％、 Sm2O3が８〜18モル％、 La2O3が１〜3.5モル％ の範囲内とした誘電体磁器組成物において、 Bi2O3を0.1〜2.5重量％の範囲添加したことを特徴とす
る誘電体磁器組成物。1. A (BaO). (TiO 2 ) X- based composition and Sm 2 O
3 and La 2 O 3 as the main components, and the composition of the above main components in terms of oxide is as follows: BaO 15 to 19 mol%, TiO 2 62 to 74 mol%, Sm 2 O 3 8 to 18 mol %, La 2 O 3 in the range of 1 to 3.5 mol%, and Bi 2 O 3 in the range of 0.1 to 2.5% by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63219465A JPH0764630B2 (en) | 1988-08-31 | 1988-08-31 | Dielectric porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63219465A JPH0764630B2 (en) | 1988-08-31 | 1988-08-31 | Dielectric porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0269351A JPH0269351A (en) | 1990-03-08 |
| JPH0764630B2 true JPH0764630B2 (en) | 1995-07-12 |
Family
ID=16735860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63219465A Expired - Fee Related JPH0764630B2 (en) | 1988-08-31 | 1988-08-31 | Dielectric porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0764630B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108821768B (en) * | 2018-08-02 | 2021-04-16 | 广东国华新材料科技股份有限公司 | Microwave dielectric ceramic material and preparation method thereof |
-
1988
- 1988-08-31 JP JP63219465A patent/JPH0764630B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0269351A (en) | 1990-03-08 |
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