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JPH0775191B2 - Surge absorption element - Google Patents
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JPH0775191B2 - Surge absorption element - Google Patents

Surge absorption element

Info

Publication number
JPH0775191B2
JPH0775191B2 JP31087792A JP31087792A JPH0775191B2 JP H0775191 B2 JPH0775191 B2 JP H0775191B2 JP 31087792 A JP31087792 A JP 31087792A JP 31087792 A JP31087792 A JP 31087792A JP H0775191 B2 JPH0775191 B2 JP H0775191B2
Authority
JP
Japan
Prior art keywords
absorbing element
surge absorbing
surge
ceramic
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP31087792A
Other languages
Japanese (ja)
Other versions
JPH06140210A (en
Inventor
富士男 池田
隆明 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to JP31087792A priority Critical patent/JPH0775191B2/en
Publication of JPH06140210A publication Critical patent/JPH06140210A/en
Publication of JPH0775191B2 publication Critical patent/JPH0775191B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Emergency Protection Circuit Devices (AREA)

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、電子機器に侵入する過
渡的な異常電圧や雷サージ等のサージから電子部品を保
護するためのサージ吸収素子に関する。更に詳しくはキ
ャップ電極を用いずに小型化可能なサージ吸収素子に関
するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surge absorbing element for protecting electronic components from a surge such as a transient abnormal voltage or a lightning surge that enters an electronic device. More specifically, it relates to a surge absorbing element that can be miniaturized without using a cap electrode.

【0002】[0002]

【従来の技術】この種のサージ吸収素子は、電子機器の
一対の入力線路にこの電子機器に並列に接続され、電子
機器の使用電圧より高い電圧で動作するように構成され
る。即ち、サージ吸収素子はその放電開始電圧より低い
電圧では抵抗値の高い抵抗体であるが、印加電圧がこの
放電開始電圧以上のときには数10Ω以下の抵抗値の低
い抵抗体になる。電子機器に雷サージ等のサージ電圧が
瞬間的に印加されると、サージ吸収素子が放電し、サー
ジ電圧を吸収する。これによりサージ電圧は電子機器に
印加されず、サージ電圧による電子機器の故障や誤動作
が回避される。
2. Description of the Related Art A surge absorbing element of this type is connected to a pair of input lines of an electronic device in parallel with the electronic device and is configured to operate at a voltage higher than the operating voltage of the electronic device. That is, the surge absorbing element is a resistor having a high resistance value at a voltage lower than the discharge starting voltage, but becomes a resistor having a low resistance value of several tens Ω or less when the applied voltage is equal to or higher than the discharge starting voltage. When a surge voltage such as a lightning surge is momentarily applied to an electronic device, the surge absorbing element discharges and absorbs the surge voltage. As a result, the surge voltage is not applied to the electronic device, and the failure or malfunction of the electronic device due to the surge voltage is avoided.

【0003】従来のギャップ型サージ吸収素子のうち、
マイクロギャップ式サージ吸収素子は、図6に示すよう
に、周面が導電性皮膜1aで被覆された円柱状のセラミ
ック素体1を有する。このセラミック素体1の中央部分
の周面には数10〜50μm程度の幅のマイクロギャッ
プ1bがレーザビーム等で導電性皮膜1aをトリミング
することにより形成される。セラミック素体1の両端に
は一対のキャップ電極2,3が冠着され、これらのキャ
ップ電極2,3の各端面には外面にリード線4,5をそ
れぞれ溶着した一対の封止電極6,7が当接される。サ
ージ吸収素子9はキャップ電極2,3付きのセラミック
素体1と、リード線4,5付きの封止電極6,7を図示
するように互いに接触した状態でガラス管8内に収容
し、この状態でガラス管8内に不活性ガスを満たし、ガ
ラス管8を電極6,7に封着することにより作られる。
Among the conventional gap type surge absorbers,
As shown in FIG. 6, the microgap type surge absorbing element has a cylindrical ceramic body 1 whose peripheral surface is covered with a conductive film 1a. A microgap 1b having a width of several tens to 50 μm is formed on the peripheral surface of the central portion of the ceramic body 1 by trimming the conductive film 1a with a laser beam or the like. A pair of cap electrodes 2 and 3 are capped on both ends of the ceramic body 1, and a pair of sealing electrodes 6 having lead wires 4 and 5 welded to the outer surfaces of the cap electrodes 2 and 3 are attached to the respective end surfaces of the cap electrodes 2 and 3. 7 is abutted. The surge absorbing element 9 accommodates the ceramic body 1 with the cap electrodes 2 and 3 and the sealing electrodes 6 and 7 with the lead wires 4 and 5 in contact with each other in the glass tube 8 as shown in the drawing. In this state, the glass tube 8 is filled with an inert gas and the glass tube 8 is sealed to the electrodes 6 and 7.

【0004】[0004]

【発明が解決しようとする課題】上記従来のマイクロギ
ャップ式サージ吸収素子では、サージ吸収時の放電がセ
ラミック素体の外表部で発生するため、セラミック素体
の両端にキャップ電極を冠着して、この外表部とガラス
管の内壁との間にクリアランスを生じさせている。上記
従来の構造でサージ吸収素子を小型化しようとする場
合、円柱状のセラミック素体の外径を小さくすることが
考えられる。しかし、このようにセラミック素体を小さ
くするとキャップ電極の冠着が困難になる問題が生じて
くる。このために、上記サージ吸収素子を小型化できな
い。
In the above-mentioned conventional microgap type surge absorbing element, since the discharge at the time of surge absorption occurs at the outer surface portion of the ceramic body, the cap electrodes are attached to both ends of the ceramic body. A clearance is created between the outer surface and the inner wall of the glass tube. In order to reduce the size of the surge absorber with the above conventional structure, it is conceivable to reduce the outer diameter of the cylindrical ceramic body. However, when the ceramic body is made small in this way, there arises a problem that it becomes difficult to attach the cap electrode. Therefore, the surge absorbing element cannot be downsized.

【0005】本発明の目的は、サージ吸収性能に優れ、
かつ小型化可能で、実装スペースが僅かで済むサージ吸
収素子を提供することにある。
The object of the present invention is to provide excellent surge absorption performance,
Another object of the present invention is to provide a surge absorbing element which can be miniaturized and requires a small mounting space.

【0006】[0006]

【課題を解決するための手段】上記目的を達成するため
の本発明の構成を実施例に対応する図1及び図2に基づ
いて説明する。本発明のサージ吸収素子19は、セラミ
ック素体11と円柱状の一対の電極16,17と絶縁性
管体18とを備える。セラミック素体11はセラミック
円柱体11cの周面の一部に突起11dが円柱体11c
と一体的に形成され、この突起11dを含む円柱体11
cの全面が導電性皮膜11aで被包され、かつ突起11
dが形成されない円柱体11cの周面に皮膜11aの一
部を取り除いてマイクロギャップ11bが形成される。
一対の電極16,17はセラミック素体11の突起部分
の外径より僅かに大きな外径を有しセラミック素体11
の両端面に当接される。また絶縁性管体18は一対の電
極16,17が当接されたセラミック素体11を包みか
つ不活性ガスを満たして電極16,17の外周に封着さ
れる。
The structure of the present invention for achieving the above object will be described with reference to FIGS. 1 and 2 corresponding to the embodiments. The surge absorbing element 19 of the present invention includes a ceramic element body 11, a pair of cylindrical electrodes 16 and 17, and an insulating tube body 18. In the ceramic body 11, the protrusion 11d is provided on a part of the peripheral surface of the ceramic columnar body 11c.
And a cylindrical body 11 that is integrally formed with the protrusion 11d.
The entire surface of c is covered with the conductive film 11a, and the projection 11
The microgap 11b is formed by removing a part of the film 11a on the peripheral surface of the columnar body 11c where d is not formed.
The pair of electrodes 16 and 17 have an outer diameter slightly larger than the outer diameter of the protruding portion of the ceramic body 11.
Is abutted on both end faces of the. The insulating tube body 18 encloses the ceramic body 11 with which the pair of electrodes 16 and 17 are in contact, and is filled with an inert gas to be sealed on the outer circumference of the electrodes 16 and 17.

【0007】セラミック円柱体11cは、絶縁性材料で
あれば特に制限されないが、アルミナ、ムライト、ジル
コニア、ステアタイト、フォルステライト又はベリリア
のような体積固有抵抗率が1014Ωcm以上の絶縁性の
高いセラミックスが好ましい。突起11dはセラミック
素体11を絶縁性管体18に挿入したときに、セラミッ
ク円柱体11cの円柱部分が絶縁性管体18の内壁に接
触しないように設けられる。このために、突起11dを
セラミック円柱体11cの両端に設けるのが好ましい
が、突起を含むセラミック円柱体を射出成形したときの
型抜きを考慮して一方の端部に設けるだけでもよい。こ
の突起の形状として、図1及び図2に示すような真円状
のフランジ11dの他に、図3に示すような楕円状のフ
ランジ11e、図4に示すような三角形状のフランジ1
1fでもよい。
The ceramic cylindrical body 11c is not particularly limited as long as it is an insulating material, but is highly insulating with a volume resistivity of 10 14 Ωcm or more, such as alumina, mullite, zirconia, steatite, forsterite or beryllia. Ceramics are preferred. The protrusion 11d is provided so that the cylindrical portion of the ceramic cylindrical body 11c does not contact the inner wall of the insulating tubular body 18 when the ceramic body 11 is inserted into the insulating tubular body 18. For this reason, it is preferable to provide the protrusions 11d on both ends of the ceramic columnar body 11c, but it is also possible to provide the protrusions 11d on one end in consideration of die cutting when the ceramic columnar body including the protrusions is injection-molded. As the shape of this projection, in addition to the perfect circular flange 11d as shown in FIGS. 1 and 2, an elliptical flange 11e as shown in FIG. 3 and a triangular flange 1 as shown in FIG.
It may be 1f.

【0008】突起11d,11e又は11fを含むセラ
ミック円柱体11を被包してその表面に形成される導電
性皮膜11aとしては、チタン、ニッケル、酸化錫又は
窒化チタンのような導電性に優れた金属薄膜が好まし
い。この皮膜はスパッタリング、真空蒸着等により円柱
体11全体を包んで形成される。セラミック素体11の
周面には数10〜50μm程度の幅のマイクロギャップ
11bがレーザビームで導電性皮膜11aをトリミング
することにより形成される。サージ吸収素子19の電気
的極性をなくするために、マイクロギャップ11bは突
起11d,11e又は11fを除くセラミック円柱体1
1cの中央部に形成されることが好ましい。電極16,
17は絶縁性管体18の封着時に管体にクラック等が入
らないように、絶縁性管体18と熱膨張係数が近い材質
のものを選定する。絶縁性管体がホウケイ酸ガラス、鉛
ガラス等からなるガラス管の場合には、ガラス管の熱膨
張係数が整合するジュメット線(Dumet wire)又はアン
バー(Invar)が好ましい。電極16,17は絶縁性管
体18が封止する前にリード線14,15を各外面に溶
着しておくことも可能である。また絶縁性管体18内に
はアルゴンガスのような希ガス、窒素ガス又はこれらの
混合ガスが封入される。
The conductive coating 11a formed on the surface of the ceramic columnar body 11 including the protrusions 11d, 11e or 11f has excellent conductivity such as titanium, nickel, tin oxide or titanium nitride. Metal thin films are preferred. This film is formed by wrapping the entire cylindrical body 11 by sputtering, vacuum deposition or the like. A microgap 11b having a width of about several tens to 50 μm is formed on the peripheral surface of the ceramic body 11 by trimming the conductive film 11a with a laser beam. In order to eliminate the electrical polarity of the surge absorbing element 19, the microgap 11b has the ceramic columnar body 1 excluding the protrusions 11d, 11e or 11f.
It is preferably formed in the central portion of 1c. Electrode 16,
A material 17 having a thermal expansion coefficient close to that of the insulating tubular body 18 is selected so that the tubular body is not cracked when the insulating tubular body 18 is sealed. When the insulating tube is a glass tube made of borosilicate glass, lead glass or the like, a Dumet wire or an amber (Invar) with which the thermal expansion coefficient of the glass tube is matched is preferable. It is possible to weld the lead wires 14 and 15 to the outer surfaces of the electrodes 16 and 17 before the insulating tube 18 is sealed. A rare gas such as argon gas, nitrogen gas, or a mixed gas thereof is sealed in the insulating tube body 18.

【0009】本発明のサージ吸収素子は次の方法により
製造される。先ず、必要に応じてリード線14を溶着し
た一方の電極16を絶縁性管体18の一方の端部に挿入
し、絶縁性管体18の別の端部が上方にくるように絶縁
性管体18を鉛直方向に立てる。次いで、導電性皮膜1
1aで被覆されマイクロギャップ11bが形成されたセ
ラミック素体11を絶縁性管体18内に落とし込む。次
に、これらの上に必要に応じてリード線15を溶着した
他方の電極17を絶縁性管体18に挿入する。セラミッ
ク素体11を電極16及び17で挾持した状態で絶縁性
管体18の内部を真空引きして空気を抜き、代わりに不
活性ガスを導入する。この状態でカーボンヒータ(図示
せず)により絶縁性管体18及び電極16,17を加熱
すると、絶縁性管体18が電極16,17に封着され
る。
The surge absorbing element of the present invention is manufactured by the following method. First, if necessary, one electrode 16 having the lead wire 14 welded thereto is inserted into one end of the insulating tube body 18 so that the other end of the insulating tube body 18 is positioned above. Stand the body 18 vertically. Then, the conductive film 1
The ceramic body 11 covered with 1a and having the microgap 11b formed therein is dropped into the insulating tubular body 18. Next, if necessary, the other electrode 17 having the lead wire 15 welded thereon is inserted into the insulating tubular body 18. With the ceramic body 11 held between the electrodes 16 and 17, the inside of the insulating tube body 18 is evacuated to remove air, and an inert gas is introduced instead. When the insulating tubular body 18 and the electrodes 16 and 17 are heated by a carbon heater (not shown) in this state, the insulating tubular body 18 is sealed to the electrodes 16 and 17.

【0010】[0010]

【作用】電極16,17にサージ電圧が印加されると、
セラミック素体11のマイクロギャップを介して導電性
皮膜11aに沿面放電が生じ、次いで電極16と電極1
7との間でアーク放電が生じる。従来のキャップ電極の
役割を突起11d〜11fが果すため、本発明のサージ
吸収素子19はセラミック素体11の外表部と絶縁性管
体18の内壁とのクリアランスを確保でき、従来のサー
ジ吸収素子と同等のサージ吸収性能を有するとともに、
サージ吸収素子19を小型化できる。
When the surge voltage is applied to the electrodes 16 and 17,
A creeping discharge occurs in the conductive film 11a through the microgap of the ceramic body 11, and then the electrode 16 and the electrode 1
An arc discharge is generated between the target and the target. Since the projections 11d to 11f play the role of the conventional cap electrode, the surge absorbing element 19 of the present invention can secure the clearance between the outer surface portion of the ceramic body 11 and the inner wall of the insulating tube body 18, and thus the conventional surge absorbing element. While having the same surge absorption performance as
The surge absorber 19 can be miniaturized.

【0011】[0011]

【実施例】次に本発明の実施例を比較例とともに説明す
る。本発明はこの実施例に限定されるものではない。 <実施例>図1及び図2に示すように、端部に真円状の
フランジ11dが形成されたセラミック素体11を用意
する。この素子11は全長が約1.5mmで、セラミッ
ク円柱体部分の長さが約1.0mmで、フランジ部分の
長さが約0.5mmである。また円柱体部分の外径が約
0.6mmで、フランジ部分の外径が約0.9mmであ
る。フランジは円柱体と一体的に成形されたアルミナ焼
結体である。セラミック素体11はチタンからなる導電
性皮膜11aで被包される。皮膜11aはスパッタリン
グにより形成される。突起11dを除くセラミック円柱
体11cの中央部にレーザビームで導電性皮膜11aを
トリミングすることにより幅約30μmのマイクロギャ
ップ11bが形成される。外面にリード線14が溶着さ
れた電極16がセラミック素体11の一方の端面に、ま
た外面にリード線15が溶着された電極17がセラミッ
ク素体11の他方の端面にそれぞれ当接される。一対の
電極16,17は直径約1.0mmのジュメット線を長
さ約1.8mmに輪切りにしたものである。内径が約
1.02mmの鉛ガラスからなるガラス管18の中でセ
ラミック素体11が電極16,17により挾持され、こ
の状態でアルゴンガスで満たして絶縁性管体18が電極
16,17の外周に封着される。封着後のサージ吸収素
子19の寸法は外径が約2.0mm、長さが約5.0m
mである。
EXAMPLES Next, examples of the present invention will be described together with comparative examples. The invention is not limited to this example. <Example> As shown in FIGS. 1 and 2, a ceramic body 11 having a perfect circular flange 11d formed at its end is prepared. The element 11 has a total length of about 1.5 mm, a ceramic columnar portion has a length of about 1.0 mm, and a flange portion has a length of about 0.5 mm. The outer diameter of the cylindrical portion is about 0.6 mm, and the outer diameter of the flange portion is about 0.9 mm. The flange is an alumina sintered body integrally molded with the cylindrical body. The ceramic body 11 is covered with a conductive coating 11a made of titanium. The film 11a is formed by sputtering. A microgap 11b having a width of about 30 μm is formed by trimming the conductive film 11a with a laser beam in the central portion of the ceramic columnar body 11c excluding the protrusion 11d. The electrode 16 having the lead wire 14 welded to the outer surface is in contact with one end surface of the ceramic body 11, and the electrode 17 having the lead wire 15 welded to the outer surface is in contact with the other end surface of the ceramic body 11. The pair of electrodes 16 and 17 are formed by cutting a Dumet wire having a diameter of about 1.0 mm into a length of about 1.8 mm. The ceramic body 11 is held between electrodes 16 and 17 in a glass tube 18 made of lead glass having an inner diameter of about 1.02 mm, and in this state, the insulating tube 18 is filled with argon gas so that the insulating tube 18 surrounds the electrodes 16 and 17. Is sealed to. The dimensions of the surge absorbing element 19 after sealing are about 2.0 mm in outer diameter and about 5.0 m in length.
m.

【0012】<比較例>図6に示される前述したサージ
吸収素子9を比較例とした。ここでセラミック素体1は
長さ約3.1mm、直径約1.0mmであって、ムライ
ト焼結体である。この表面には実施例と同一材質で同一
厚さの導電性皮膜1aが形成され、その中央部分の外周
面には幅約30μmのマイクロギャップ1bが形成され
る。ステンレス製のキャップ電極2,3の端面には長さ
約1.8mm、直径約1.5mmであって、実施例と同
一材質の封止電極6,7が当接される。キャップ電極
2,3付きのセラミック素体1と、リード線4,5付き
の封止電極6,7が内径約1.55mmのガラス管8内
に収容され、ガラス管8が内部にアルゴンガスを満たし
て電極6,7に封着される。封着後のサージ吸収素子9
の寸法は外径が約2.6mm、長さが約7.0mmであ
る。
<Comparative Example> The aforementioned surge absorbing element 9 shown in FIG. 6 was used as a comparative example. Here, the ceramic body 1 has a length of about 3.1 mm and a diameter of about 1.0 mm, and is a mullite sintered body. A conductive film 1a made of the same material and having the same thickness as that of the embodiment is formed on this surface, and a microgap 1b having a width of about 30 μm is formed on the outer peripheral surface of the central portion thereof. The end electrodes of the stainless steel cap electrodes 2 and 3 are in contact with the sealing electrodes 6 and 7 having a length of about 1.8 mm and a diameter of about 1.5 mm and made of the same material as the embodiment. The ceramic body 1 with the cap electrodes 2 and 3 and the sealing electrodes 6 and 7 with the lead wires 4 and 5 are housed in a glass tube 8 having an inner diameter of about 1.55 mm, and the glass tube 8 contains argon gas inside. It is filled and sealed to the electrodes 6 and 7. Surge absorbing element 9 after sealing
The outer diameter is about 2.6 mm and the length is about 7.0 mm.

【0013】実施例及び比較例のサージ吸収素子につい
て静電気寿命試験と、疑似サージ応答試験を行った。 <静電気寿命試験>図5に示される回路の出力端子21
及び22にサージ吸収素子のリード線を接続して静電気
寿命試験を行った。図5において23は10kVの直流
電源、24は静電容量500pFのコンデンサ、25は
500Ωの抵抗体、26は充放電用切換スイッチであ
る。スイッチ26を図の実線に示すように接点aに切換
えコンデンサ24に10kVの電圧を印加してコンデン
サ24を充電した後、スイッチ26を図の破線に示すよ
うに接点bに切換えてコンデンサ24を放電させてサー
ジ吸収素子に静電気を印加した。実施例及び比較例のサ
ージ吸収素子に2000回ずつ繰返し上記静電気を印加
して、各サージ吸収素子の試験前後の放電開始電圧、絶
縁抵抗、静電容量をそれぞれ測定した。その結果、試験
前の比較例のサージ吸収素子は放電開始電圧が平均約2
50V、標準偏差15V(試料数50)であり、一方実
施例のサージ吸収素子は放電開始電圧が平均約250
V、標準偏差15V(試料数50)であり、また絶縁抵
抗値が1010Ω以上で静電容量は0.5pFであった。
試験後に測定したところ、実施例と比較例のサージ吸収
素子はそれぞれ放電開始電圧が平均約250Vで、絶縁
抵抗値が1010Ω以上で、静電容量は0.5pFであ
り、各値に変化がなかった。
An electrostatic life test and a pseudo surge response test were conducted on the surge absorbing elements of the examples and comparative examples. <Electrostatic life test> Output terminal 21 of the circuit shown in FIG.
An electrostatic life test was conducted by connecting the lead wires of the surge absorbing element to Nos. 22 and 22. In FIG. 5, 23 is a 10 kV DC power source, 24 is a capacitor having an electrostatic capacity of 500 pF, 25 is a resistor of 500Ω, and 26 is a charge / discharge changeover switch. The switch 26 is switched to the contact a as shown by the solid line in the figure, and a voltage of 10 kV is applied to the capacitor 24 to charge the capacitor 24. Then, the switch 26 is switched to the contact b as shown by the broken line in the figure to discharge the capacitor 24. Then, static electricity was applied to the surge absorbing element. The above static electricity was repeatedly applied 2000 times to the surge absorbing elements of Examples and Comparative Examples, and the discharge starting voltage, insulation resistance, and capacitance of each surge absorbing element before and after the test were measured. As a result, the surge absorption element of the comparative example before the test had an average discharge starting voltage of about 2
50 V, standard deviation 15 V (the number of samples is 50), while the surge absorption element of the example has an average discharge starting voltage of about 250.
V, the standard deviation was 15 V (the number of samples was 50), the insulation resistance was 10 10 Ω or more, and the capacitance was 0.5 pF.
When measured after the test, the surge absorption elements of the example and the comparative example each had an average discharge start voltage of about 250 V, an insulation resistance value of 10 10 Ω or more, and a capacitance of 0.5 pF. There was no

【0014】<疑似サージ応答試験>実施例と比較例の
サージ吸収素子に(1.2×50)μsec−2kVの
電圧サージを100回ずつ繰返し印加し、その動作電圧
を測定した。実施例と比較例のサージ吸収素子はいずれ
も直流放電開始電圧が250Vに設計されたものを用い
た。比較例のサージ吸収素子が平均約350Vで放電を
開始し、その標準偏差が50V(試料数20)であった
のに対して、実施例のサージ吸収素子も平均約350V
で放電を開始し、その標準偏差も50V(試料数25)
であった。以上のことから、実施例のサージ吸収素子は
比較例のサージ吸収素子と比較して耐久性及びサージ吸
収特性において劣らないことが判った。
<Pseudo Surge Response Test> A voltage surge of (1.2 × 50) μsec−2 kV was repeatedly applied 100 times to the surge absorbing elements of Examples and Comparative Examples, and the operating voltage was measured. The surge absorbing elements of Examples and Comparative Examples were designed to have a DC discharge inception voltage of 250V. The surge absorbing element of the comparative example started discharging at an average of about 350 V and its standard deviation was 50 V (the number of samples was 20), whereas the surge absorbing element of the example also had an average of about 350 V.
Discharge started at 50V with a standard deviation of 50V (25 samples)
Met. From the above, it was found that the surge absorbing element of the example is not inferior in durability and surge absorbing characteristics to the surge absorbing element of the comparative example.

【0015】[0015]

【発明の効果】以上述べたように、本発明のサージ吸収
素子は、従来のキャップ電極の代わりに突起によりセラ
ミック素体の外表部と絶縁性管体の内壁とのクリアラン
スを確保するため、従来のサージ吸収素子と同等のサー
ジ吸収性能を有しながら、サージ吸収素子を小型化で
き、結果的にサージ吸収素子の実装スペースをより小さ
くすることができる。特に、小型化したサージ吸収素子
は日本電子機械工業会規格(Standards ofElectronic I
ndustries Asociation of Japan, 略称EIAJ規格)
が定めるメルフ型素子(Metal Electrode Face Bonding
Device)の寸法規格に適合し得るため、本発明のサー
ジ吸収素子を容易にメルフ型素子に対応させることがで
きる。
As described above, in the surge absorbing element of the present invention, the protrusion is used instead of the conventional cap electrode to secure the clearance between the outer surface portion of the ceramic body and the inner wall of the insulating tube. The surge absorbing element can be downsized while having the same surge absorbing performance as the surge absorbing element of, and as a result, the mounting space of the surge absorbing element can be further reduced. In particular, the miniaturized surge absorber is a standard of the Japan Electronic Machinery Manufacturers Association (Standards of Electronic I
ndustries Association of Japan, abbreviated EIAJ standard)
Metal Electrode Face Bonding
The surge absorbing element of the present invention can be easily adapted to a melf type element because it can meet the dimensional standard of Device).

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明実施例のサージ吸収素子の断面図。FIG. 1 is a sectional view of a surge absorber according to an embodiment of the present invention.

【図2】その分解斜視図。FIG. 2 is an exploded perspective view thereof.

【図3】本発明の別の実施例のセラミック素体の斜視
図。
FIG. 3 is a perspective view of a ceramic body according to another embodiment of the present invention.

【図4】本発明の更に別の実施例のセラミック素体の斜
視図。
FIG. 4 is a perspective view of a ceramic body according to still another embodiment of the present invention.

【図5】実施例及び比較例の静電気寿命試験回路。FIG. 5 is an electrostatic life test circuit of Examples and Comparative Examples.

【図6】従来例のサージ吸収素子の断面図。FIG. 6 is a sectional view of a conventional surge absorber.

【符号の説明】[Explanation of symbols]

11 セラミック素体 11a 導電性皮膜 11b マイクロギャップ 11c セラミック円柱体 11d,11e,11f 突起 14,15 リード線 16,17 電極 18 絶縁性管体 19 サージ吸収素子 11 Ceramic Element 11a Conductive Film 11b Micro Gap 11c Ceramic Column 11d, 11e, 11f Protrusion 14, 15 Lead Wire 16, 17 Electrode 18 Insulation Tube 19 Surge Absorption Element

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 セラミック円柱体(11c)の周面の一部に
突起(11d,11e,11f)が前記円柱体(11c)と一体的に形成さ
れ、前記突起(11d,11e,11f)を含む前記円柱体(11c)の全
面が導電性皮膜(11a)で被包され、かつ前記突起(11d,11
e,11f)が形成されない前記円柱体(11c)の周面に前記皮
膜(11a)の一部を取り除いてマイクロギャップ(11b)が形
成されたセラミック素体(11)と、 前記セラミック素体(11)の突起部分の外径より僅かに大
きな外径を有し前記セラミック素体(11)の両端面に当接
された円柱状の一対の電極(16,17)と、 前記一対の電極(16,17)が当接されたセラミック素体(1
1)を包みかつ不活性ガスを満たして前記電極(16、17)の
外周に封着された絶縁性管体(18)とを備えたサージ吸収
素子。
1. A projection (11d, 11e, 11f) is integrally formed with the cylinder (11c) on a part of the peripheral surface of the ceramic cylinder (11c), and the projection (11d, 11e, 11f) is formed. The entire surface of the columnar body (11c) including is covered with a conductive film (11a), and the protrusions (11d, 11
e, 11f) a ceramic body (11) in which a microgap (11b) is formed by removing a part of the film (11a) on the peripheral surface of the cylindrical body (11c) where the ceramic body (11c) is not formed. A pair of cylindrical electrodes (16, 17) having an outer diameter slightly larger than the outer diameter of the protruding portion of (11) and abutting on both end surfaces of the ceramic body (11), and the pair of electrodes ( (16, 17) abutted ceramic body (1
A surge absorbing element comprising (1) and an insulating tube (18) which is filled with an inert gas and sealed around the electrodes (16, 17).
【請求項2】 突起(11d,11e,11f)がセラミック円柱体
(11c)の端部に形成された請求項1記載のサージ吸収素
子。
2. The projection (11d, 11e, 11f) has a ceramic columnar body.
The surge absorber according to claim 1, wherein the surge absorber is formed at the end of (11c).
【請求項3】 突起(11d,11e,11f)がフランジである請
求項2記載のサージ吸収素子。
3. The surge absorbing element according to claim 2, wherein the projections (11d, 11e, 11f) are flanges.
【請求項4】 導電性皮膜(11a)がチタン、ニッケル、
酸化錫又は窒化チタンである請求項1記載のサージ吸収
素子。
4. The conductive film (11a) comprises titanium, nickel,
The surge absorbing element according to claim 1, which is tin oxide or titanium nitride.
【請求項5】 マイクロギャップ(11b)が突起(11d,11e,
11f)を除くセラミック円柱体(11c)の中央部に形成され
た請求項2記載のサージ吸収素子。
5. The microgap (11b) has protrusions (11d, 11e,
The surge absorbing element according to claim 2, wherein the surge absorbing element is formed in a central portion of the ceramic columnar body (11c) excluding 11f).
【請求項6】 絶縁性管体(18)がガラス管である請求項
1記載のサージ吸収素子。
6. The surge absorbing element according to claim 1, wherein the insulating tube body (18) is a glass tube.
【請求項7】 不活性ガスが希ガス、窒素ガス又はこれ
らの混合ガスである請求項1記載のサージ吸収素子。
7. The surge absorbing element according to claim 1, wherein the inert gas is a rare gas, a nitrogen gas, or a mixed gas thereof.
JP31087792A 1992-10-26 1992-10-26 Surge absorption element Expired - Lifetime JPH0775191B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31087792A JPH0775191B2 (en) 1992-10-26 1992-10-26 Surge absorption element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31087792A JPH0775191B2 (en) 1992-10-26 1992-10-26 Surge absorption element

Publications (2)

Publication Number Publication Date
JPH06140210A JPH06140210A (en) 1994-05-20
JPH0775191B2 true JPH0775191B2 (en) 1995-08-09

Family

ID=18010463

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31087792A Expired - Lifetime JPH0775191B2 (en) 1992-10-26 1992-10-26 Surge absorption element

Country Status (1)

Country Link
JP (1) JPH0775191B2 (en)

Also Published As

Publication number Publication date
JPH06140210A (en) 1994-05-20

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