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JPH0777163B2 - Potentiometer - Google Patents
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JPH0777163B2 - Potentiometer - Google Patents

Potentiometer

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Publication number
JPH0777163B2
JPH0777163B2 JP61072201A JP7220186A JPH0777163B2 JP H0777163 B2 JPH0777163 B2 JP H0777163B2 JP 61072201 A JP61072201 A JP 61072201A JP 7220186 A JP7220186 A JP 7220186A JP H0777163 B2 JPH0777163 B2 JP H0777163B2
Authority
JP
Japan
Prior art keywords
magnetoresistive element
magnetic field
ferromagnetic magnetoresistive
output
permanent magnet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61072201A
Other languages
Japanese (ja)
Other versions
JPS62229888A (en
Inventor
建一 青
好 吉野
利和 松下
Original Assignee
日本電装株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電装株式会社 filed Critical 日本電装株式会社
Priority to JP61072201A priority Critical patent/JPH0777163B2/en
Publication of JPS62229888A publication Critical patent/JPS62229888A/en
Publication of JPH0777163B2 publication Critical patent/JPH0777163B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、ポテンショメータ、特に非接触ポテンショメ
ータに関する。
TECHNICAL FIELD The present invention relates to a potentiometer, and more particularly to a non-contact potentiometer.

〔従来の技術〕[Conventional technology]

非接触ポテンショメータの磁気回路は、従来、有底円筒
状コアや回転磁性体および永久磁石と共に閉磁路として
構成され、回転磁性体の先端部分に形成した間隙に磁気
抵抗素子であるInSbを配置して、回転磁性体の回転に応
じた出力を発生するようになっており、そして回転磁性
体の先端部分の間隙の大きさを変えることにより、換言
すれば回転磁性体の先端を所定の関数加工することによ
りInSbから所定の関数出力を得ている。
The magnetic circuit of a non-contact potentiometer is conventionally configured as a closed magnetic circuit together with a bottomed cylindrical core, a rotating magnetic body and a permanent magnet, and InSb, which is a magnetoresistive element, is placed in a gap formed at the tip of the rotating magnetic body. , The output is generated according to the rotation of the rotating magnetic body, and by changing the size of the gap at the tip of the rotating magnetic body, in other words, the tip of the rotating magnetic body is processed by a predetermined function. As a result, a predetermined function output is obtained from InSb.

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

しかしながら、上記、従来技術に示す非接触ポテンショ
メータにおいて、回転磁性体の先端を所定の関数形状に
なるように加工することは非常に困難であり、また間隙
に狭い部分と広い部分があると磁束が狭い部分に集中し
磁束密度の均一性が得られない。このため、磁気抵抗素
子であるInSbの出力の直線性がばらついてしまい、非接
触ポテンショメータの製造歩留りは非常に低いものであ
った。
However, in the above-mentioned non-contact potentiometer shown in the prior art, it is very difficult to process the tip of the rotating magnetic body so as to have a predetermined function shape, and if the gap has a narrow portion and a wide portion, the magnetic flux The magnetic flux density is not uniform because it concentrates on a narrow area. For this reason, the linearity of the output of InSb, which is a magnetoresistive element, varies, and the manufacturing yield of the non-contact potentiometer was very low.

本発明はこのような点に鑑みなされたもので、出力の直
線性が良く、製造歩留りも比較的高い非接触ポテンショ
メータを提供する事を目的としている。
The present invention has been made in view of the above circumstances, and an object thereof is to provide a non-contact potentiometer having a good output linearity and a relatively high manufacturing yield.

〔問題点を解決するための手段〕[Means for solving problems]

上記の目的を達成する為に、本発明のポテンショメータ
は、強磁性磁気抵抗素子と、該強磁性磁気抵抗素子と所
定の間隔をもって配置する磁界発生手段とを備えてお
り、該磁界発生手段が前記強磁性磁気抵抗素子に印加す
る磁界の強度の絶対値が前記強磁性磁気抵抗素子の飽和
磁界強度以上であり、前記強磁性磁気抵抗素子と前記磁
界発生手段とを、一定の線形に沿って相対的に移動させ
る事を特徴としているものである。
In order to achieve the above object, the potentiometer of the present invention comprises a ferromagnetic magnetoresistive element and magnetic field generating means arranged at a predetermined interval from the ferromagnetic magnetoresistive element, and the magnetic field generating means is The absolute value of the strength of the magnetic field applied to the ferromagnetic magnetoresistive element is equal to or higher than the saturation magnetic field strength of the ferromagnetic magnetoresistive element, and the ferromagnetic magnetoresistive element and the magnetic field generating means are relatively aligned along a fixed line. The feature is that they are moved automatically.

〔作用〕[Action]

そして、上記の手段によると、強磁性磁気抵抗素子が磁
界を受ける事によりその抵抗値が変化(減少)する事を
利用して、磁界発生手段を一定の線形に沿って相対的に
移動させる事により強磁性磁気抵抗素子の抵抗値が連続
的に変化し、その変化を例えば電圧変化として出力する
ので出力が直線性を示し、又、磁界強度の絶対値が強磁
性磁気抵抗素子の飽和磁界強度以上であると強磁性磁気
抵抗素子の抵抗値変化分は磁界強度の多少のばらつき等
により変動を受けずほぼ一定となる。
Then, according to the above means, the magnetic field generating means is relatively moved along a fixed linearity by utilizing the fact that the resistance value of the ferromagnetic magnetoresistive element changes (decreases) when it receives a magnetic field. Causes the resistance value of the ferromagnetic magnetoresistive element to change continuously, and the change is output as, for example, a voltage change, so that the output exhibits linearity, and the absolute value of the magnetic field strength is the saturation magnetic field strength of the ferromagnetic magnetoresistive element. With the above, the change in the resistance value of the ferromagnetic magnetoresistive element is not changed due to some variation in the magnetic field strength and is substantially constant.

〔実施例〕〔Example〕

以下、本発明を図に示す実施例を用いて説明する。第1
図に本発明の一実施例を示し、同図(a)にその上面
図、同図(b)に図(a)中におけるA−A線断面図を
示す。図においてその構成は、絶縁基板1上に、開口部
を持つ円形又は多角形(図は前者)の形状で、Ni-Fe、N
i-Co等の薄膜から成る強磁性磁気抵抗素子2を形成し、
その開口部の一方の端部を電源電圧Vccに電気接続し、
もう一方の端子を接地(GND)している。又、強磁性磁
気抵抗素子2内(本実施例では強磁性磁気抵抗素子2の
中間点)から出力端子Voutを取出している。そして、
強磁性磁気抵抗素子2と所定の間隔をもって扇形の永久
磁石3が、絶縁基板1の強磁性磁気抵抗素子2側
((b)図上側)又はその反対側((b)図下側)に取
り付けられている。(図は前者)。又、永久磁石3は強
磁性磁気抵抗素子2の中心を回転軸の中心として、強磁
性磁気抵抗素子2の周方向に回転するものであり、永久
磁石3が強磁性磁気抵抗素子2に向けて発生する磁界の
強度の絶対値は強磁性磁気抵抗素子2の飽和磁界強度以
上となっている。又、その磁界は強磁性磁気抵抗素子2
の周方向(本発明でいう長手方向)に垂直な方向、すな
わち半径方向にて印加されている。
The present invention will be described below with reference to the embodiments shown in the drawings. First
An embodiment of the present invention is shown in the figure, a top view thereof is shown in the same figure (a), and a cross-sectional view taken along line AA in the same figure is shown in the same figure (b). In the figure, the structure is a circular or polygonal shape (the former is the figure) with an opening on the insulating substrate 1, and Ni-Fe, N
Forming a ferromagnetic magnetoresistive element 2 composed of a thin film of i-Co,
Electrically connecting one end of the opening to a power supply voltage V cc ,
The other terminal is grounded (GND). Further, the output terminal V out is taken out from within the ferromagnetic magnetoresistive element 2 (in the present embodiment, at the midpoint of the ferromagnetic magnetoresistive element 2). And
A fan-shaped permanent magnet 3 is attached at a predetermined distance from the ferromagnetic magnetoresistive element 2 on the side of the ferromagnetic magnetoresistive element 2 of the insulating substrate 1 (upper side in the figure (b)) or the opposite side (lower side in the figure (b)). Has been. (The figure shows the former). The permanent magnet 3 rotates in the circumferential direction of the ferromagnetic magnetoresistive element 2 with the center of the ferromagnetic magnetoresistive element 2 as the center of the rotation axis. The absolute value of the strength of the generated magnetic field is equal to or higher than the saturation magnetic field strength of the ferromagnetic magnetoresistive element 2. In addition, the magnetic field of the ferromagnetic magnetoresistive element 2
Is applied in the direction perpendicular to the circumferential direction (longitudinal direction in the present invention), that is, in the radial direction.

次に、上記構成のポテンショメータの作用を説明する。
強磁性磁気抵抗素子2は、永久磁石3により電流方向に
対し垂直の方向から磁界を受けるとその抵抗値が減少す
る。そして永久磁石3が強磁性磁気抵抗素子2の周方向
に回転する事により強磁性磁気抵抗素子2内の抵抗値減
少部分も連続的に回転移動する。このため、GND端子と
出力Vout端子との間の抵抗値と、出力Vout端子と電源
電圧Vcc端子との間の抵抗値との比により決まる電源電
圧Vccの分圧値としての出力Voutの値は第2図に示す
ような直線性を持ったものとなる。尚、第2図におい
て、回転角度0degとは、第1図における永久磁石3の直
線の辺3aが図中のA−A線に垂直であり、又、図中左側
に永久磁石3が配置する時である。又、第2図はその位
置から第1図において右回転する特性を示しているが、
回転方向はどちらでもよい。そして、強磁性磁気抵抗素
子2は第6図のグラフにその特性(図中実線)を示す如
く飽和磁界(図中一点鎖線)以上の磁界強度(絶対値)
を受けると、その抵抗値の減少が一定となる(抵抗値が
ほぼ一定となる)為、出力Voutの値が、永久磁石3の
取り付け誤差及び着磁強度の多少の変動に依存する事が
なくなる。尚、第6図において、InSbの特性を点線で同
時に示すが、InSbは磁界強度が大きくなる程、抵抗値が
大きくなる事がわかる。
Next, the operation of the potentiometer having the above structure will be described.
The resistance value of the ferromagnetic magnetoresistive element 2 decreases when the permanent magnet 3 receives a magnetic field from a direction perpendicular to the current direction. Then, as the permanent magnet 3 rotates in the circumferential direction of the ferromagnetic magnetoresistive element 2, the portion where the resistance value decreases in the ferromagnetic magnetoresistive element 2 also continuously rotates. Therefore, the output as a divided voltage value of the power supply voltage Vcc determined by the ratio of the resistance value between the GND terminal and the output Vout terminal and the resistance value between the output Vout terminal and the power supply voltage Vcc terminal. The value of V out has linearity as shown in FIG. In addition, in FIG. 2, the rotation angle 0 deg means that the straight side 3a of the permanent magnet 3 in FIG. 1 is perpendicular to the line AA in the figure, and the permanent magnet 3 is arranged on the left side in the figure. It's time. Further, FIG. 2 shows the characteristic of rotating rightward from that position in FIG. 1,
Either direction of rotation may be used. The ferromagnetic magnetoresistive element 2 has a magnetic field strength (absolute value) equal to or higher than the saturation magnetic field (one-dot chain line in the figure) as shown in the characteristic (solid line in the figure) of the graph of FIG.
When receiving, the decrease of the resistance value becomes constant (the resistance value becomes almost constant), so that the value of the output V out may depend on the mounting error of the permanent magnet 3 and some fluctuation of the magnetizing strength. Disappear. In addition, in FIG. 6, the characteristics of InSb are simultaneously shown by the dotted line, but it can be seen that the resistance value of InSb increases as the magnetic field strength increases.

したがって本実施例によると、磁石の厳密な選定及び取
り付けの厳しい管理を行う事なく、出力の直線性が良
い、製造歩留りの比較的高い非接触ポテンショメータを
提供できる。
Therefore, according to the present embodiment, it is possible to provide a non-contact potentiometer having a good output linearity and a relatively high manufacturing yield, without strict selection of magnets and strict control of mounting.

尚、本発明は上記実施例に限定されず、その主旨を逸脱
しない限り例えば以下に示す如く種々変形可能である。
The present invention is not limited to the above embodiment, and various modifications can be made as shown below, for example, without departing from the spirit of the invention.

(1)上記実施例では強磁性磁気抵抗素子2の形状が円
形又は多角形であったが、第3図に示す他の実施例の如
く短冊形状の強磁性磁気抵抗素子4としてもよい。した
がって、永久磁石5の形状も長方形としてリニア型非接
触ポテンショメータとする事が出来る。尚、本実施例の
場合、永久磁石5は強磁性磁気抵抗素子4の長手方向を
平行移動して強磁性磁気抵抗素子4の抵抗値を変化させ
る。そして、それに応じてその出力Voutは第4図に示
す如く直線性のものとなる。
(1) Although the ferromagnetic magnetoresistive element 2 has a circular or polygonal shape in the above embodiment, it may be a strip-shaped ferromagnetic magnetoresistive element 4 as in the other embodiments shown in FIG. Therefore, the permanent magnet 5 can also be a linear non-contact potentiometer with a rectangular shape. In the case of this embodiment, the permanent magnet 5 translates in the longitudinal direction of the ferromagnetic magnetoresistive element 4 to change the resistance value of the ferromagnetic magnetoresistive element 4. Then, accordingly, the output V out becomes linear as shown in FIG.

(2)強磁性磁気抵抗素子2、4から出力を取り出す端
子Voutの位置は強磁性磁気抵抗素子2、4内であれば
どこでもよい。尚、第1図に示す実施例において、端子
outの位置を強磁性磁気抵抗素子2の中間点とし、永
久磁石3の形状を半円の扇形、すなわち、永久磁石3か
ら発生した磁界が強磁性磁気抵抗素子2の半分に印加さ
れるようにしてあるのは、永久磁石3の回転に対して敏
感に出力Voutが変化する様にしてあるのであり、例え
ば永久磁石3が4分の1円の扇形であるとすると、回転
角度0degから回転が始まり角度が90deg動く間は出力V
outの値に変化が生じないので、それを避ける為であ
る。従って、この様な事を考えた場合、出力端子Vout
の数、強磁性磁気抵抗素子2内での位置に応じて永久磁
石3の形状を変化させるのが望ましいであろう。
(2) The position of the terminal V out for taking out the output from the ferromagnetic magnetoresistive elements 2 and 4 may be anywhere within the ferromagnetic magnetoresistive elements 2 and 4. In the embodiment shown in FIG. 1, the position of the terminal V out is the midpoint of the ferromagnetic magnetoresistive element 2, and the shape of the permanent magnet 3 is a semicircular sector, that is, the magnetic field generated from the permanent magnet 3 is strong. The output V out is sensitively applied to the rotation of the permanent magnet 3 so that it is applied to half of the magnetic magnetoresistive element 2. For example, the permanent magnet 3 is a quarter. If it is a circular sector, the output V will start while the rotation starts from 0deg and the angle moves 90deg.
This is because there is no change in the out value, so it is avoided. Therefore, when considering such a thing, the output terminal V out
It may be desirable to change the shape of the permanent magnet 3 depending on the number of the magnets and the position within the ferromagnetic magnetoresistive element 2.

(3)上記実施例では、磁界発生手段として永久磁石3,
5を用いているが、磁界を発生する他の手段、例えば電
磁石等であってもよい。
(3) In the above embodiment, the permanent magnet 3,
Although 5 is used, other means for generating a magnetic field, such as an electromagnet, may be used.

(4)例えば第1図における実施例について、第5図の
その応用としての実施例に示す如く、絶縁基板1上の所
定の位置に別の強磁性磁気抵抗素子20を形成し、例えば
それと直列に抵抗21を電気接続してその両者の間の点か
ら出力Vout′を取りだしてもよい。本実施例による
と、永久磁石3が回転角度0degから回転が始まり角度が
90deg近辺になると出力Vout′の信号に変化が生じ、容
易に永久磁石3の位置を検出する事が出来る。尚、言う
までもないが、本発明は強磁性磁気抵抗素子20だけでも
よく、強磁性磁気抵抗素子2がない構成としてもよい。
(4) For example, as for the embodiment shown in FIG. 1, another ferromagnetic magnetoresistive element 20 is formed at a predetermined position on the insulating substrate 1 as shown in the application shown in FIG. It is also possible to electrically connect a resistor 21 to and take out the output V out ′ from a point between them. According to this embodiment, the permanent magnet 3 starts to rotate from the rotation angle 0 deg and the angle is
In the vicinity of 90 deg, the signal of the output V out ′ changes, and the position of the permanent magnet 3 can be easily detected. Needless to say, the present invention may include only the ferromagnetic magnetoresistive element 20 or the structure without the ferromagnetic magnetoresistive element 2.

〔発明の効果〕〔The invention's effect〕

以上述べた如く、本発明によると、強磁性磁気抵抗素子
が磁界を受けるとその抵抗値が変化(減少)する事を利
用してその出力が直線性を有するポテンショメータを実
現し、又、磁気抵抗素子が飽和磁界以上の磁界強度を受
けると、その抵抗値の変化が磁界強度の多少のばらつ
き、機差等によらずほぼ一定となる事から、磁界発生手
段の設計及び取り付けを容易にし、製造歩留りの比較的
高い非接触ポテンショメータを提供できるという効果が
ある。
As described above, according to the present invention, a potentiometer having a linear output is realized by utilizing the fact that the resistance value of a ferromagnetic magnetoresistive element changes (decreases) when it receives a magnetic field. When the element receives a magnetic field strength higher than the saturation magnetic field, the change in its resistance value becomes almost constant regardless of some variations in the magnetic field strength, machine differences, etc. There is an effect that a non-contact potentiometer having a relatively high yield can be provided.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明のポテンショメータの一実施例であり、
同図(a)にその上面図、同図(b)にそのA−A線断
面図を示す。第2図は第1図における実施例の出力特性
を示すグラフ、第3図は本発明のポテンショメータの他
の実施例の構成図、第4図は第3図における実施例の出
力特性を示すグラフ、第5図は第1図における実施例の
応用としての実施例の上面図、第6図は強磁性磁気抵抗
素子の特性を示すグラフである。 1……絶縁基板,2,4,20……強磁性磁気抵抗素子,3,5…
…永久磁石。
FIG. 1 shows an embodiment of the potentiometer of the present invention,
A top view thereof is shown in FIG. 9A and a cross-sectional view taken along the line AA is shown in FIG. 2 is a graph showing the output characteristics of the embodiment shown in FIG. 1, FIG. 3 is a configuration diagram of another embodiment of the potentiometer of the present invention, and FIG. 4 is a graph showing the output characteristics of the embodiment shown in FIG. FIG. 5 is a top view of the embodiment as an application of the embodiment in FIG. 1, and FIG. 6 is a graph showing the characteristics of the ferromagnetic magnetoresistive element. 1 ... Insulating substrate, 2, 4, 20 ... Ferromagnetic magnetoresistive element, 3, 5 ...
…permanent magnet.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】強磁性磁気抵抗素子と、該強磁性磁気抵抗
素子と所定の間隔をもって配置する磁界発生手段とを備
えており、該磁界発生手段が前記強磁性磁気抵抗素子に
印加する磁界の強度の絶対値が前記強磁性磁気抵抗素子
の飽和磁界強度以上であり、前記強磁性磁気抵抗素子と
前記磁界発生手段とを、一定の線形に沿って相対的に移
動させる事を特徴とするポテンショメータ。
1. A ferromagnetic magnetoresistive element, and magnetic field generating means arranged at a predetermined distance from the ferromagnetic magnetoresistive element. The magnetic field generating means applies magnetic field to the ferromagnetic magnetoresistive element. The absolute value of the intensity is equal to or higher than the saturation magnetic field intensity of the ferromagnetic magnetoresistive element, and the ferromagnetic magnetoresistive element and the magnetic field generating means are relatively moved along a constant linear shape. .
【請求項2】上記磁界発生手段から発生する磁界が、上
記強磁性磁気抵抗素子の長手方向に垂直な方向に印加さ
れる特許請求の範囲第1項記載のポテンショメータ。
2. The potentiometer according to claim 1, wherein the magnetic field generated by the magnetic field generating means is applied in a direction perpendicular to the longitudinal direction of the ferromagnetic magnetoresistive element.
【請求項3】上記磁界発生手段の移動方向が、上記強磁
性磁気抵抗素子の長手方向である特許請求の範囲第1項
又は第2項に記載のポテンショメータ。
3. The potentiometer according to claim 1 or 2, wherein the moving direction of the magnetic field generating means is the longitudinal direction of the ferromagnetic magnetoresistive element.
JP61072201A 1986-03-28 1986-03-28 Potentiometer Expired - Lifetime JPH0777163B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61072201A JPH0777163B2 (en) 1986-03-28 1986-03-28 Potentiometer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61072201A JPH0777163B2 (en) 1986-03-28 1986-03-28 Potentiometer

Publications (2)

Publication Number Publication Date
JPS62229888A JPS62229888A (en) 1987-10-08
JPH0777163B2 true JPH0777163B2 (en) 1995-08-16

Family

ID=13482381

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61072201A Expired - Lifetime JPH0777163B2 (en) 1986-03-28 1986-03-28 Potentiometer

Country Status (1)

Country Link
JP (1) JPH0777163B2 (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6032997B2 (en) * 1977-07-06 1985-07-31 電気音響株式会社 polyphase potentiometer
JPS5721882A (en) * 1980-07-15 1982-02-04 Fujitsu Ltd Magnetic reluctance element

Also Published As

Publication number Publication date
JPS62229888A (en) 1987-10-08

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