JPH0783056B2 - Semiconductor device - Google Patents

Description

The present invention relates to a plurality of pairs of signal lines (for example, data bus, data bus,
The present invention relates to reduction of crosstalk between signal lines in a semiconductor device having an address or the like).

[Prior Art] FIG. 4 is a plan view showing an example of an arrangement of signal lines (for example, a data bus and an address) paired by two lines in a conventional semiconductor device.

In the figure, (1) is a semiconductor substrate (or an insulating film), and (2) is a signal line.

Further, FIG. 5 is a sectional view taken along line ZZ shown in FIG. In the figure, (4) is an insulating film.

Next, a conventional semiconductor device will be described with reference to the drawings.

In the example shown in FIGS. 4 and 5, a pair of signal lines (2) Shows the case where they are arranged in parallel on the same plane of the semiconductor substrate (1). Usually many signal lines (2)
In many cases, due to the layout, they are arranged in a concentrated manner in the semiconductor device as shown in FIG.

[Problems to be Solved by the Invention] With the rapid increase in capacity and integration of semiconductor devices in recent years, the signal lines inside the semiconductor devices are also required to have higher density.
As a result, the line distance L ₂ of the signal line (2) in FIG. 5 is unavoidable. Along with this, the line-to-line stray capacitance C ₂ has increased, and as a result, the adverse effect of crosstalk has become a serious problem. Therefore, a pair of signal lines (2) as shown in FIG. However, different noises are added to each of them, resulting in malfunction of the semiconductor device, and a countermeasure against the problem has been a problem.

The present invention has been made to solve the above problems, and an object thereof is to mitigate the adverse effects of crosstalk between signal lines (2).

[Means for Solving the Problems] In the semiconductor device according to the present invention, each of the above-described pair of signal lines is arranged separately in the vertical direction in the semiconductor substrate, and twisted (Twist). I chose

[Operation] The signal line groups of the semiconductor device according to the present invention are arranged such that the groups are vertically separated in the semiconductor substrate and twisted so that the same noise is applied to both of the pair of signal lines. It is intended to suppress the occurrence of malfunction of the semiconductor device.

[Embodiment] An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a plan view showing the arrangement of internal signal lines of a semiconductor device according to an embodiment of the present invention. 2 is a sectional view taken along line XX of FIG. 1, and FIG. 3 is a sectional view taken along line YY of FIG. In the figure, (1) is a semiconductor substrate (or an insulating film), (2) is a signal line, (3) is a contact hole, and (4) is an insulating film.

Next, the operation of the semiconductor device according to one embodiment of the present invention will be described with reference to FIGS. The feature of this embodiment resides in that each pair of signal lines (2) in the semiconductor device is vertically separated and twisted.

In Fig. 2, a pair of signal lines (2) Are arranged vertically at a distance of L ₂ . Here, L ₁ and L ₂ are set so that the stray capacitance C _{2 in} the vertical direction is sufficiently small with respect to the stray capacitance C _{1 in} the horizontal direction and C ₁ > C ₂ . Therefore, for example, in A ₁ of the lower signal line (2), stray capacitance is present.
It is affected by A ₀ and A ₂ via C ₁ and also the signal line (2) of the upper layer Mainly affected by.

On the contrary, as shown in FIG. 3, each signal line (2) is twisted through the contact hole (3). Of lower layer signal line (2)
For A ₁ From the upper signal line (2) For A, the arrangement is mainly influenced by A ₀ and A ₂ .

Therefore, by twisting the signal line (2) through the contact hole (3), the signal line (2) is paired. Since the same influence (noise) is applied to each of the above, malfunction of the circuit inside the semiconductor device can be suppressed.

Further, in the above embodiment, the case where the vertical twist (Twist) is carried out by the method as shown in FIG. 1 has been described. ) Is added, so long as noise countermeasures are taken for via stray capacitance between lines. Any type of twist system can be applied.

[Effects of the Invention] As described above, according to the present invention, it is possible to increase the degree of integration of wirings, prevent signal line noise, and suppress malfunctions of a semiconductor device. .

[Brief description of drawings]

1 is a plan view showing the arrangement of internal signal lines of a semiconductor device according to an embodiment of the present invention, FIGS. 2 and 3 are sectional views taken along line XX in FIG. 1, and Y.Y. FIG. FIG. 4 is a plan view showing the arrangement of internal signal lines of a conventional semiconductor device, and FIG. 5 is a sectional view taken along the line Z--Z in FIG. In the figure, (1) is a semiconductor substrate (or insulating film), (2)
Is a signal line, (3) is a contact hole, and (4) is an insulating film. In the drawings, the same reference numerals indicate the same or corresponding parts.

Claims (1)

[Claims] 1. A semiconductor device having a pair of signal line pairs, wherein each signal line pair is arranged separately in the vertical direction, and twisted (Twist) to provide the same signal line pair. The semiconductor device is designed to suppress the malfunction of the circuit inside the semiconductor device by adding the noise of.