JPH0783071B2 - Microwave integrated circuit - Google Patents

Description

The present invention relates to a structure of a microwave integrated circuit using a dielectric substrate and a semiconductor substrate.

(Prior Art) Conventionally, in this type of device, as shown in FIG. 4, a semiconductor substrate 5 is inserted between dielectric substrates 3, and microstrip lines 4 and 7 provided on each substrate are connected to a metal sheet 8. It was configured to connect. Reference numeral 6 is for equalizing the heights of the surfaces of the respective substrates to eliminate discontinuity of the connection portion, and a conductor is usually used.

(Problems to be Solved by the Invention) In the present configuration, when the difference in thickness between the dielectric substrate and the semiconductor substrate is large, the height of the protruding portion of the conductor 6 for installing the substrate becomes high, so that the substrate connecting portion is high. However, there is a drawback that the discontinuous component of increases and the connection loss increases. Therefore, there is a problem that the thickness of the semiconductor substrate cannot be made smaller than that of the dielectric substrate, and the size of the circuit on this substrate is limited. On the other hand, when a thin semiconductor substrate is used, it is necessary to reduce the thickness of the dielectric substrate. However, this cannot be increased in size due to machining, and the size of the circuit placed on the dielectric substrate cannot be increased. There was a problem that the size was limited. The present invention aims to remedy these drawbacks.

(Means for Solving the Problems) According to the present invention, a dielectric substrate and a first microwave integrated circuit provided on the dielectric substrate for impedance design in a microwave region. Transmission line of
A microwave integrated circuit having a semiconductor substrate and a second transmission line for a microwave integrated circuit, which is provided on the semiconductor substrate and designed by impedance design in a microwave region, the dielectric substrate comprising: The back surface has a hole that does not penetrate, and a semiconductor substrate on which a semiconductor element is mounted is attached to this hole, and the first transmission line on the dielectric substrate and the second transmission line on the semiconductor substrate are connected to each other. A microwave integrated circuit is provided.

Further, a dielectric substrate, a first transmission line for a microwave integrated circuit, which is provided on the dielectric substrate by impedance design in a microwave region, a semiconductor substrate, and provided on the semiconductor substrate. A microwave integrated circuit having a second transmission line for a microwave integrated circuit formed by impedance designing in a microwave region, wherein the dielectric substrate has a plurality of holes that do not penetrate to the back surface. A semiconductor substrate on which a semiconductor element is mounted is attached to each of these holes, and a first transmission line on the dielectric substrate and a second transmission line on the semiconductor substrate are connected to each other. There is provided a microwave integrated circuit in which a peripheral circuit connected to the first transmission line is mounted on the dielectric substrate.

(Operation) A semiconductor substrate is provided in the non-through hole of the dielectric substrate and the heights of the surfaces are set to be equal. Since the ground conductor or the outer conductor can be provided on the lower surface of the dielectric substrate or on the upper surfaces of the dielectric substrate and the semiconductor substrate, the conductor is not required on the lower surface of the semiconductor substrate. Therefore, a microwave transmission line in which both substrates are connected with low loss can be obtained.

(Embodiment) FIG. 1 shows an embodiment of the present invention. 1, 2 are signal input / output ports, 3 is a dielectric substrate, 20 is a semiconductor substrate, 4 and 21 are microstrip lines, and 8 is a microstrip line. The metal sheet 17 for connection is a hole provided in the dielectric substrate.

The depth of the hole 17 can be made equal to the thickness of the substrate 20 to eliminate the step at the connecting portion of the microstrip line and eliminate the discontinuous component. Therefore, in this configuration, it is possible to suppress an increase in connection loss due to the discontinuous portion. Further, since the influence of the discontinuous portion tends to increase as the frequency increases, this configuration is suitable for a circuit operated in the high frequency band.

In the conventional example of FIG. 4, the ground conductor 23 is provided on the lower surface of the semiconductor substrate 5 to electrically connect to the conductor portion 6, but in the embodiment of FIG. 1, the ground conductor is not required on the lower surface of the semiconductor substrate 20. Therefore, the manufacturing process is simplified.

This configuration has the advantage that the thickness of the semiconductor substrate 20 can be made sufficiently thin and the circuit pattern on the substrate can be made small.
Further, it is not necessary to reduce the thickness of the dielectric substrate, so that a substrate having a large area can be used, and various circuits can be arranged on the dielectric substrate.

FIG. 2 shows another embodiment of the present invention, in which 9 is a dielectric substrate 18.
The coplanar line installed on the top, 11 is the center conductor, 12,1
3 is an outer conductor, 10 is a coplanar line on the semiconductor substrate 19, 14 is its center conductor, and 15 and 16 are outer conductors. 17
Is a hole provided in the dielectric substrate, and 8 is a metal sheet for connecting the coplanar line on each substrate.

Unlike the microstrip line 4 of FIG. 1, the coplanar line does not have a ground conductor 22 on the back surface of the substrate, but instead has a center conductor and an outer conductor on the top surface of the substrate (this works similar to the ground conductor of the microstrip line). Are placed at the same time. Therefore, a substrate having such a coplanar line (usually, a line having a ground conductor such as a coplanar line on the upper surface of the substrate is referred to in this way) is connected in a configuration using the conductor 6 shown in FIG. In this case, there is a drawback that the conductor is present on the lower surface of the substrate and the characteristic impedance of the transmission line changes. However, in the configuration according to the present invention shown in FIG. 2, since the semiconductor substrate is embedded in the hole provided in the dielectric substrate for connection, there is no conductor on the lower surface of the semiconductor substrate and the characteristic impedance does not change, No deterioration of characteristics.

Therefore, the present invention is a construction method suitable for connecting a dielectric substrate and a semiconductor substrate on which a circuit using a coplanar line such as a coplanar line is arranged.

FIG. 3 shows another embodiment of the present invention, in which 24 and 25 are input / output ports, 26 is a low pass filter, 27 is a directional coupler, 28 is a dummy, 29 is a dielectric resonator, and 30, 31. Is a semiconductor substrate. By arranging the peripheral circuits having various functions on the dielectric substrate in this manner, the semiconductor substrate can be effectively used, and the cost of the integrated circuit can be reduced.

(Effects of the Invention) As described above, since the semiconductor substrate is incorporated into the hole provided in the dielectric substrate and the transmission lines on each substrate are connected, the semiconductor substrate can be thinned, and therefore The circuit pattern on the board can be made small, many circuits can be provided on the board, and the area of the board can be increased because it is not necessary to thin the dielectric board. Therefore, various circuits can be arranged on this board. There are advantages. Also,
The present invention also has an advantage that each board using a coplanar line such as a coplanar line can be connected without deterioration of the circuit characteristics. Further, there is an advantage that an economical integrated circuit can be realized by mounting a plurality of semiconductor substrates and providing peripheral circuits on the dielectric substrate.

In particular, according to the present invention, the dielectric substrate having the first transmission line for the microwave integrated circuit, which is formed by impedance designing in the microwave region, is provided with the microwave in the non-penetrating single hole or holes on the back surface. Since the semiconductor substrate having the second transmission line for the microwave integrated circuit formed by impedance designing in the region is attached, the ground conductor or the outer conductor is provided on the lower surface of the dielectric substrate or the dielectric substrate and the semiconductor substrate. It can be provided on the upper surface. For this reason, no conductor is required on the lower surface of the semiconductor substrate, and it is possible to prevent the inconvenience that the characteristic impedance changes in this portion and the discontinuity is caused by microwaves. Therefore, even if the thickness of the dielectric substrate and that of the semiconductor substrate are different, impedance mismatch does not occur at the connection between the two, and a microwave transmission line that reliably prevents reflection loss and insertion loss from increasing can be obtained. You can

[Brief description of drawings]

FIG. 1 is a diagram showing an embodiment of claims (1) of the present invention, FIG. 2 is another embodiment of the present invention, and FIG. 3 is an embodiment of claims (2), FIG. 4 shows a configuration example of a conventional integrated circuit. 1,2,24,25 …… Input / output port, 3,18 …… Dielectric substrate, 4,7,21 …… Microstrip line, 5,19,20,30,31 …… Semiconductor substrate, 6 …… Conductor, 8 …… Metal sheet, 9,10 …… Coplanar line, 11,14 …… Center conductor, 12,13,15,16 …… Outer conductor, 17 …… Hole, 22,23 …… Ground conductor, 26 …… Low pass filter, 27 …… Directional coupler, 28 …… Dummy, 29 …… Dielectric resonator.

Claims (2)

[Claims] 1. A dielectric substrate, a first transmission line for a microwave integrated circuit which is formed on the dielectric substrate by impedance designing in a microwave region, a semiconductor substrate, and the semiconductor. A microwave integrated circuit provided on a substrate and having a second transmission line for a microwave integrated circuit formed by impedance design in a microwave region, wherein the dielectric substrate does not penetrate to the back surface. The semiconductor substrate on which a semiconductor element is mounted is attached to the hole, and the first transmission line on the dielectric substrate and the second transmission line on the semiconductor substrate are connected to each other. A microwave integrated circuit characterized by being provided. 2. A dielectric substrate, a first transmission line for a microwave integrated circuit which is formed on the dielectric substrate by impedance design in a microwave region, a semiconductor substrate, and the semiconductor. A microwave integrated circuit having a second transmission line for a microwave integrated circuit, which is provided on a substrate and designed by impedance design in a microwave region, wherein a plurality of the dielectric substrates do not penetrate to the back surface. Of holes, the semiconductor substrate on which a semiconductor element is mounted is attached to each hole, the first transmission line on the dielectric substrate and the second transmission line on the semiconductor substrate. Are connected to each other, and a peripheral circuit connected to the first transmission line is mounted on the dielectric substrate.