JPH0787186B2 - Method for manufacturing BSO wafer - Google Patents
Method for manufacturing BSO waferInfo
- Publication number
- JPH0787186B2 JPH0787186B2 JP13787487A JP13787487A JPH0787186B2 JP H0787186 B2 JPH0787186 B2 JP H0787186B2 JP 13787487 A JP13787487 A JP 13787487A JP 13787487 A JP13787487 A JP 13787487A JP H0787186 B2 JPH0787186 B2 JP H0787186B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- crystal
- bso
- core
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000013078 crystal Substances 0.000 claims description 77
- 230000003287 optical effect Effects 0.000 description 13
- 239000007788 liquid Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- JSILWGOAJSWOGY-UHFFFAOYSA-N bismuth;oxosilicon Chemical compound [Bi].[Si]=O JSILWGOAJSWOGY-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
Landscapes
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は複合酸化物強誘電体、特に電気光学効果、光伝
導効果等をもつ光機能材料であるBSOのウエハの製造方
法に関する。Description: FIELD OF THE INVENTION The present invention relates to a method for producing a composite oxide ferroelectric material, in particular, a wafer of BSO which is an optical functional material having an electro-optical effect, a photoconductive effect and the like.
従来の技術 ビスマス・シリコン・オキサイド（Bi12SiO20、以下BSO
に略）は、電気光学効果、光伝導効果等をもつ光機能材
料であり、種々の応用が考えられ、光伝導体もその１つ
である。BSOを光伝導体として使用するとき、電気光学
効果を示さない方が望ましい。このとき問題となるの
が、結晶の方位である。Conventional technology Bismuth silicon oxide (Bi 12 SiO 20 , hereinafter BSO
Is an optical functional material having an electro-optical effect, a photoconductive effect, etc., and various applications can be considered, and a photoconductor is one of them. When using BSO as a photoconductor, it is desirable not to show electro-optic effects. At this time, the problem is the crystal orientation.
BSOの光学主軸は〈110〉方向であり、〈110〉方向に振
動する直線偏光に対しては電気光学効果を示さない。そ
こで、｛110｝面を側面に備えるウエハが光伝導体とし
て適していることになる。このようなウエハの結晶方位
は無数に考えられるが、結晶方位ができるだけ単純な方
がよいので、例えば第１図（ａ）、（ｂ）に示すような
結晶方位を持っているウエハが好ましいことになるが、
このうちでも（ａ）の方が対称性が高くより好ましい。The optical principal axis of BSO is the <110> direction, and it has no electro-optical effect on linearly polarized light vibrating in the <110> direction. Therefore, a wafer having a {110} plane on its side surface is suitable as a photoconductor. There are numerous crystal orientations of such a wafer, but it is preferable that the crystal orientation be as simple as possible. Therefore, for example, a wafer having a crystal orientation as shown in FIGS. 1A and 1B is preferable. But
Of these, (a) is more preferred because it has high symmetry.
発明が解決しようとする問題点 BSO単結晶は、これまで〈111〉あるいは〈100〉方向で
成長させていたため、光伝導体に適した結晶方向のウエ
ハを切り出そうとすると、小型のものにならざるを得な
かった。Problems to be Solved by the Invention Since BSO single crystals have been grown in the <111> or <100> direction so far, when a wafer with a crystal orientation suitable for a photoconductor is cut out, it becomes small. I had to do it.
BSO単結晶〈111〉方向で成長させると、結晶の中心部
で、コア（不純物などを取り込んだ領域で低指数面にお
いて優先的に成長する）が生成されたり、熱歪みが残留
すること等から、光学的特性に優れた均一な結晶を得る
ことが大変困難である。When grown in the <111> direction of a BSO single crystal, a core (which preferentially grows in a low index plane in a region where impurities are taken in) is generated in the center of the crystal, and thermal strain remains. However, it is very difficult to obtain a uniform crystal having excellent optical characteristics.
また、〈100〉方向で成長させると、結晶成長中に強い
熱歪みが生じ、残留する。Further, when the crystal is grown in the <100> direction, strong thermal strain is generated during crystal growth and remains.
従って、従来の方法では、光学的特性に優れ、かつ均一
な大型ウエハを得ることができない。Therefore, it is impossible to obtain a uniform large-sized wafer having excellent optical characteristics by the conventional method.
結晶方位が第１図で示されるようなウエハを、〈111〉
方向で成長させた従来の単結晶から切り出す様子を第３
図に示す。第３図（ａ）は第１図（ａ）の結晶方位を、
第３図（ｂ）は第１図（ｂ）と等価の結晶方位を備える
ウエハ１を従来の単結晶２からスライスするものであ
る。A wafer whose crystal orientation is as shown in FIG.
Third, the appearance of cutting from a conventional single crystal grown in the direction
Shown in the figure. FIG. 3 (a) shows the crystal orientation of FIG. 1 (a),
FIG. 3B shows a wafer 1 having a crystal orientation equivalent to that shown in FIG. 1B, which is sliced from a conventional single crystal 2.
第３図（ａ）に示すようなスライスの仕方では、ウエハ
１の中に結晶の中心部が含まれるので、上記のコア等の
影響により光学的特性に優れた均一なウエハを得ること
はできない。また第３図（ｂ）に示すようなスライスの
方法では、ウエハ１を結晶成長方向すなわち、〈111〉
方向よりずらしてスライス加工しなければならないた
め、大型のウエハを得ることができない。In the slicing method as shown in FIG. 3 (a), since the central portion of the crystal is included in the wafer 1, it is not possible to obtain a uniform wafer having excellent optical characteristics due to the influence of the core and the like. . In the slicing method shown in FIG. 3B, the wafer 1 is grown in the crystal growth direction, that is, <111>.
A large wafer cannot be obtained because the slice processing must be performed while shifting from the direction.
このように、従来の製造方法では、望ましい結晶方位を
備える大型で光学的特性に優れ、均一なウエハを得るこ
とは極めて困難であった。従って、本発明の目的は、従
来のBSOウエハの製造方法における上記問題点を解決
し、望ましい結晶方位を備えながら、大型で全体に均一
かつ優れた光学的特性を有するウエハを容易に得ること
を可能にするBSOウエハ製造方法を提供することにあ
る。As described above, according to the conventional manufacturing method, it is extremely difficult to obtain a large-sized wafer having a desired crystal orientation and excellent in optical characteristics and uniform. Therefore, an object of the present invention is to solve the above problems in the conventional method for manufacturing a BSO wafer, and to easily obtain a large-sized wafer having uniform and excellent optical characteristics while having a desirable crystal orientation. It is to provide a BSO wafer manufacturing method that enables the manufacturing.
問題点を解決するための手段 本発明による、BSOウエハの製造方法では、〈110〉方向
に結晶を成長させる。結晶を成長させる方法は、成長方
向が制御できればどのような方法でも使用可能である
が、好ましくはチョクラルスキー法とする。Means for Solving Problems In the method for manufacturing a BSO wafer according to the present invention, crystals are grown in the <110> direction. As a method for growing a crystal, any method can be used as long as the growth direction can be controlled, but the Czochralski method is preferable.
チョクラルスキー法を用いる場合、単結晶成長時の結晶
回転速度を100rpm以下とする。原料としてはBi2O3とSiO
2を用いるのが好ましく、また、るつぼは白金るつぼが
好ましい。When the Czochralski method is used, the crystal rotation speed during single crystal growth is 100 rpm or less. Bi 2 O 3 and SiO as raw materials
2 is preferably used, and the crucible is preferably a platinum crucible.
生成した単結晶から第２図に示すよう、〈110〉面を側
面に持つ（100）ウエハを切り出す。As shown in FIG. 2, a (100) wafer having a <110> face as a side face is cut out from the generated single crystal.
作用 すでに述べたように、BSOの光学的品質を低下させる大
きな原因の１つとしてコアの生成がある。コアは結晶成
長中、低指数面において優先的に成長し、不純物などを
取り込んだ領域であり、吸収係数が大きく、光伝導効果
を大幅に低下させるものである。コアの生じる低指数面
としては、（100）、（110）、（111）、（210）面など
があげられる。Action As described above, one of the major causes of deterioration in the optical quality of BSO is the formation of core. The core is a region that preferentially grows on the low index plane during crystal growth and incorporates impurities and the like, has a large absorption coefficient, and greatly reduces the photoconductive effect. Examples of the low index plane in which the core is generated include (100), (110), (111) and (210) planes.
これらの低指数面において形成されるコアは、通常結晶
の中心部に生じるが、このコアの有無及びその大きさ
は、単結晶成長中の結晶回転速度に大きく依存する。以
下、第４図を参照して結晶回転速度、固液界面形状およ
びコア形状の関係を説明する。第４図（ａ）、（ｂ）に
示すように、コアは固液界面が下に凸の場合にのみ生
じ、また、突出部が大きいほど逆にコア径は小さくなる
傾向を示す。一方、固液界面が上に凸になると、コアは
生じないが、強い歪みが残留し、結晶の光学的特性は大
きく低下する。したがって、第４図（ｃ）のような固液
界面が平坦になるような結晶回転速度で、単結晶成長を
行うのが好ましいといえる。The core formed on these low index planes usually occurs at the center of the crystal, but the presence or absence of this core and its size largely depend on the crystal rotation speed during single crystal growth. Hereinafter, the relationship among the crystal rotation speed, the solid-liquid interface shape, and the core shape will be described with reference to FIG. As shown in FIGS. 4 (a) and 4 (b), the core occurs only when the solid-liquid interface is convex downward, and the larger the protrusion, the smaller the core diameter tends to be. On the other hand, when the solid-liquid interface is convex upward, the core does not occur, but strong distortion remains, and the optical characteristics of the crystal are greatly deteriorated. Therefore, it can be said that it is preferable to grow the single crystal at a crystal rotation speed such that the solid-liquid interface becomes flat as shown in FIG. 4 (c).
しかしながら、結晶の成長に伴って、原料融液の深さや
また育成された結晶からの輻射熱等の条件が刻々と変化
するため、この理想的な回転速度ω3も結晶の成長と共
に変化する。したがって、結晶回転速度を常にω3に設
定し続けることは非常に困難である。However, as the crystal grows, the conditions such as the depth of the raw material melt and the radiant heat from the grown crystal change every moment, so that this ideal rotation speed ω 3 also changes with the crystal growth. Therefore, it is very difficult to always keep the crystal rotation speed at ω 3 .
従来の〈111〉方向へ成長させた単結晶から（100）ウエ
ハを得るためには、第３図（ａ）に示すように、結晶イ
ンゴットを斜めに輪切りをするようにスライスしなけれ
ばならない。そのため、全面に亘ってコア、歪みのない
単結晶インゴットを作製しなければならなかった。In order to obtain a (100) wafer from a conventional single crystal grown in the <111> direction, the crystal ingot must be sliced into diagonal slices as shown in FIG. Therefore, it has been necessary to manufacture a single crystal ingot with no core or distortion over the entire surface.
ところが、前述のように単結晶成長時に固液界面を平坦
に保つことは非常に困難なため、結晶インゴット中には
どうしてもコアおよび歪みが生じてしまう。したがっ
て、従来の方法では光学的特性に優れた均一で大型の
（100）ウエハを得ることは大変困難であった。However, as described above, it is very difficult to keep the solid-liquid interface flat during the growth of a single crystal, so that a core and strain are inevitably generated in the crystal ingot. Therefore, it has been very difficult to obtain a uniform and large (100) wafer having excellent optical characteristics by the conventional method.
本発明の方法に従うと、〈110〉方向に結晶を成長させ
るため、（100）ウエハを得るためには第２図に示すよ
うにインゴットを結晶成長方向にスライスすればよい。
よってインゴット中心部に生じるコアを容易に避けるこ
とができる。また、前述の通り、単結晶成長時の結晶回
転速度を小さくすることによりコアの断面積を大幅に縮
小し、かつ歪みを残留させないことが可能である。結晶
成長に伴い固液界面の形状は変化するが、結晶回転速度
を十分小さくすれば、コアの小さい、全長に亘って残留
歪みのないBSO単結晶を得ることができる。According to the method of the present invention, a crystal is grown in the <110> direction. Therefore, in order to obtain a (100) wafer, an ingot may be sliced in the crystal growth direction as shown in FIG.
Therefore, the core generated at the center of the ingot can be easily avoided. Further, as described above, by reducing the crystal rotation speed during single crystal growth, it is possible to significantly reduce the cross-sectional area of the core and prevent strain from remaining. The shape of the solid-liquid interface changes with crystal growth, but if the crystal rotation speed is made sufficiently small, a BSO single crystal with a small core and no residual strain over the entire length can be obtained.
この単結晶から第２図にしめすようにスライスすること
により、最も望ましい面方位である第１図（ａ）と等価
な結晶方位をもつ大型で光学的に均一かつ高品質なウエ
ハを再現性よく得ることが可能である。By slicing this single crystal as shown in FIG. 2, a large, optically uniform, high-quality wafer having a crystal orientation equivalent to that of FIG. It is possible to obtain.
実施例 以下に本発明の実施例を説明する。これは、本発明の一
実施例に過ぎず、本発明を何ら制限するものではない。Examples Examples of the present invention will be described below. This is merely an example of the present invention and does not limit the present invention in any way.
チョクラルスキー法を用い、本発明の方法でBSOウエハ
を作製した。まず、内径100mmφ、深さ100mm、厚さ1.5m
mの白金製るつぼ１に、BSO原料を5Kg装入した。このBSO
原料として、Bi2O3とSiO2をモル比6:1に秤量し、十分に
混合したものを用いた。A BSO wafer was produced by the method of the present invention using the Czochralski method. First, inner diameter 100mmφ, depth 100mm, thickness 1.5m
Into a platinum crucible 1 of m, 5 kg of BSO raw material was charged. This BSO
As a raw material, Bi 2 O 3 and SiO 2 were weighed at a molar ratio of 6: 1 and sufficiently mixed, and used.
回転軸の方向に［110］方向が位置するように装着され
た種結晶を上記原料を融解した液につけ、回転させなが
らゆっくりと［110］方向に引き上げてBSO単結晶を成長
させた。引き上げ速度は0.8mm/hであり、結晶回転速度
は25rpm〜5rpmで、結晶の成長に伴い連続的に変化させ
た。この結果、60mmφ、120mm、重量約2.3KgのBSO単結
晶２を得た。A seed crystal mounted so that the [110] direction was located in the direction of the rotation axis was immersed in the liquid in which the above raw material was melted, and slowly pulled in the [110] direction while rotating to grow a BSO single crystal. The pulling rate was 0.8 mm / h, and the crystal rotation rate was 25 rpm to 5 rpm, which was continuously changed as the crystal grew. As a result, a BSO single crystal 2 having a diameter of 60 mm, a diameter of 120 mm and a weight of about 2.3 kg was obtained.
上記の方法で成長させた結晶１は中心にコア３を含んで
いた。しかし、結晶回転速度を十分小さくしたため、コ
ア径は結晶全長に亘って8mmφ以下と極めて小さなもの
であった。The crystal 1 grown by the above method contained the core 3 in the center. However, since the crystal rotation speed was made sufficiently small, the core diameter was 8 mmφ or less over the entire length of the crystal, which was extremely small.
単結晶２を第２図に示すようにコア３の外側で、その表
面が（001）面となるようにスライス加工して、50mm×5
0mm×1.5mmのコアを含まないウエハ１を得ることができ
た。得られたウエハ１は第１図（ｂ）と等価の結晶方位
を備えており、その表裏両面を光学研磨し、光弾性法に
より消光比を測定したところ、ウエハ全面に30dB以上の
値を示した。以上により、本発明の方法により製造した
BSOウエハ１は、光学的特性が均一でかる優れている結
晶であることが確認できた。As shown in FIG. 2, the single crystal 2 is sliced on the outside of the core 3 so that the surface becomes the (001) plane, and 50 mm × 5
Wafer 1 having no core of 0 mm × 1.5 mm could be obtained. The obtained wafer 1 has a crystallographic orientation equivalent to that shown in FIG. 1 (b). When both the front and back surfaces of the wafer 1 are optically polished and the extinction ratio is measured by the photoelastic method, a value of 30 dB or more is shown on the entire surface of the wafer. It was By the above, it was manufactured by the method of the present invention.
It was confirmed that the BSO wafer 1 was a crystal having excellent optical characteristics and a good lightness.
発明の効果 以上説明したように、本発明の方法では、〈110〉方向
に結晶の成長を行ったBSO単結晶からウエハを切り出
す。このようにして成長させたBSO単結晶からは、光伝
導体として望まし結晶方位を備えている大型のウエハを
切り出すことができる。このウエハの光学的特性は、大
変優れており、しかも均一である。EFFECTS OF THE INVENTION As described above, in the method of the present invention, a wafer is cut out from a BSO single crystal in which crystals are grown in the <110> direction. From the BSO single crystal grown in this manner, a large wafer having a desired crystal orientation as a photoconductor can be cut out. The optical properties of this wafer are very good and uniform.
従って、本発明の方法により、従来製造することができ
なかった光伝導体として優れた性能を持つ大型のBSOウ
エハを得ることが可能になった。Therefore, according to the method of the present invention, it has become possible to obtain a large-sized BSO wafer having excellent performance as a photoconductor that could not be conventionally manufactured.
第１図（ａ）、（ｂ）は、本発明による方法で得られる
BSOウエハの結晶方位の例を示し、 第２図は、本発明の方法により成長させたBSO単結晶の
スライス加工の仕方を説明する図であり、 第３図（ａ）、（ｂ）は［111］方向に成長させた従来
のBSO単結晶から、それぞれ第１図（ａ）、（ｂ）に示
す結晶方位を備えるウエハを得るためのスライス加工の
仕方を説明する図であり、 第４図は、単結晶成長時の結晶回転速度、固液界面形状
および結晶断面のコア形状の関係を表す図である。 （主な参照番号） １……ウエハ、２……BSO単結晶、３……コア、1 (a) and 1 (b) are obtained by the method according to the present invention.
An example of a crystal orientation of a BSO wafer is shown, and FIG. 2 is a diagram for explaining a method of slicing a BSO single crystal grown by the method of the present invention, and FIGS. 3 (a) and 3 (b) show [ FIG. 4 is a diagram illustrating a method of slicing to obtain a wafer having crystal orientations shown in FIGS. 1A and 1B from a conventional BSO single crystal grown in the [111] direction, respectively. FIG. 4 is a diagram showing a relationship between a crystal rotation speed during single crystal growth, a solid-liquid interface shape, and a core shape of a crystal cross section. (Main reference numbers) 1 ... wafer, 2 ... BSO single crystal, 3 ... core,
───────────────────────────────────────────────────── フロントページの続き (72)発明者 山本 武 大阪府大阪市此花区島屋１丁目１番３号 住友電気工業株式会社大阪製作所内 (56)参考文献 特開 昭61−241926（ＪＰ，Ａ) 特開 昭61−251600（ＪＰ，Ａ) 特開 昭63−31720（ＪＰ，Ａ) 特開 平１−58509（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Takeshi Yamamoto, 1-3 1-3 Shimaya, Konohana-ku, Osaka City, Osaka Prefecture Sumitomo Electric Industries, Ltd. (56) Reference JP-A-61-241926 (JP, A) ) JP 61-251600 (JP, A) JP 63-31720 (JP, A) JP 1-58509 (JP, A)
Claims (3)
0〉方向に成長させた単結晶から、（110）ウエハまたは
（100）ウエハを切り出すことを特徴とするBSOウエハの
製造方法。1. A method for producing a BSO wafer, comprising:
A method for manufacturing a BSO wafer, which comprises cutting a (110) wafer or a (100) wafer from a single crystal grown in the 0> direction.
スキー法であることを特徴とする特許請求の範囲第１項
に記載のBSOウエハの製造方法。2. The method for producing a BSO wafer according to claim 1, wherein the method for producing the BSO single crystal is the Czochralski method.
00rpm以下とすることを特徴とする特許請求の範囲第２
項に記載のBSOウエハの製造方法。3. The crystal rotation speed during the BSO single crystal growth is 1
The second aspect of the invention is characterized in that it is set to 00 rpm or less.
A method for manufacturing a BSO wafer according to item.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13787487A JPH0787186B2 (en) | 1987-06-01 | 1987-06-01 | Method for manufacturing BSO wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13787487A JPH0787186B2 (en) | 1987-06-01 | 1987-06-01 | Method for manufacturing BSO wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63301525A JPS63301525A (en) | 1988-12-08 |
| JPH0787186B2 true JPH0787186B2 (en) | 1995-09-20 |
Family
ID=15208720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13787487A Expired - Fee Related JPH0787186B2 (en) | 1987-06-01 | 1987-06-01 | Method for manufacturing BSO wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0787186B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04249114A (en) * | 1991-02-06 | 1992-09-04 | Ngk Insulators Ltd | Method for cutting single crystal for optics |
| DE10025746A1 (en) * | 2000-05-24 | 2001-12-06 | Juergen H Werner | Production of a solid body substrate used in the silicon switching circuits comprises a cylindrical solid body and cutting out substrate plates in the direction of the cylinder axis, and laterally joining several substrate plates |
| JP4921761B2 (en) * | 2005-09-30 | 2012-04-25 | 東京電波株式会社 | Method for producing zinc oxide single crystal substrate |
| CN108621316B (en) * | 2018-05-03 | 2020-02-18 | 大连理工大学 | A water-dissolution-assisted precise and efficient cutting method for easily deliquescent optical crystals |
| CN111251483A (en) * | 2020-03-12 | 2020-06-09 | 常州时创能源股份有限公司 | Silicon rod cutting method |
-
1987
- 1987-06-01 JP JP13787487A patent/JPH0787186B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63301525A (en) | 1988-12-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |